JP2020502809A - 下位構造材料に直接rf曝露しない共形の気密性誘電体封入のためのsibn膜 - Google Patents
下位構造材料に直接rf曝露しない共形の気密性誘電体封入のためのsibn膜 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 127
- 238000005538 encapsulation Methods 0.000 title claims abstract description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 56
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 239000002243 precursor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 229910003697 SiBN Inorganic materials 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 3
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical group B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 abstract description 5
- 230000006378 damage Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- -1 but not limited to Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
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Abstract
Description
Claims (15)
- メモリ材料のサーマルバジェット未満の温度で、前記メモリ材料の上に第1の前駆体を流すことによって、前記メモリ材料の上に第1の材料を熱的に堆積することと、
前記第1の材料に窒素を取り込むために、前記第1の材料を窒素プラズマに曝露することと、
前記メモリ材料の上に所定の厚さを有する誘電体封入層を形成するために、前記第1の材料を熱的に堆積すること、及び前記第1の材料を前記窒素プラズマに曝露することを繰り返すことと
を含む方法。 - 前記温度が約300℃未満である、請求項1に記載の方法。
- 前記第1の前駆体が、ケイ素含有前駆体及びホウ素含有前駆体を含む、請求項1に記載の方法。
- 前記ケイ素含有前駆体が、シラン(SiH4)及びジシラン(Si2H6)のうちの1つ又は複数を含み、前記ホウ素含有前駆体が、ジボラン(B2H6)である、請求項3に記載の方法。
- 前記窒素プラズマが、窒素ガス(N2)及びアンモニア(NH3)のうちの1つ又は複数を含む、請求項1に記載の方法。
- N2の流量が約5Lpmから約8Lpmの間であり、NH3の流量が約500sccmから約2Lpmの間である、請求項5に記載の方法。
- 前記誘電体封入層が、窒素がドープされたホウ化ケイ素(SiBN)を含む、請求項1に記載の方法。
- 前記誘電体封入層の前記所定の厚さが、約200Åから約300Åの間である、請求項1に記載の方法。
- 熱化学気相堆積プロセスによってメモリ材料の上に第1の材料を堆積することであって、
シラン及びジシランのうちの1つ又は複数を含むケイ素含有の第1の前駆体を流すこと、
約300℃未満の温度で、前記メモリ材料の上にジボランを含むホウ素含有の第1の前駆体を流すこと、並びに
前記第1の材料を堆積するために、前記ケイ素含有の第1の前駆体と前記ホウ素含有の第1の前駆体とを反応させること
を含む、第1の材料を堆積することと、
窒素ガス及びアンモニアからなる群から選択された1つ又は複数の窒素含有ガスを含む窒素プラズマに、前記第1の材料を曝露することと、
前記メモリ材料の上に共形の窒素がドープされたホウ化ケイ素誘電体封入層を形成するために、前記第1の材料を堆積すること及び前記第1の材料を前記窒素プラズマに曝露することを繰り返すことと
を含む方法。 - 前記温度が約200℃から約250℃の間である、請求項9に記載の方法。
- 前記第1の材料を堆積すること及び前記第1の材料を前記窒素プラズマに曝露することが、約10回から約15回の間で繰り返される、請求項9に記載の方法。
- 前記ケイ素含有の第1の前駆体の流量が、約100sccmから約700sccmの間であり、前記ホウ素含有の第1の前駆体の流量が、一般に約20sccmから約400sccmの間である、請求項9に記載の方法。
- 前記第1の材料を窒素プラズマに曝露するためのプラズマ出力が、約100Wから約500Wの間である、請求項9に記載の方法。
- 基板と、
前記基板の一部の上に配置されたメモリ材料の1つ又は複数の高アスペクト比特徴と、
前記メモリ材料及び前記基板の露出部分の上に配置されたSiBNを含む誘電体封入層と
を含むメモリデバイス。 - 前記誘電体封入層の厚さが、約200Åから約300Åの間である、請求項14に記載のメモリデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662437986P | 2016-12-22 | 2016-12-22 | |
US62/437,986 | 2016-12-22 | ||
PCT/US2017/061976 WO2018118288A1 (en) | 2016-12-22 | 2017-11-16 | Sibn film for conformal hermetic dielectric encapsulation without direct rf exposure to underlying structure material |
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CN115280467A (zh) * | 2019-11-08 | 2022-11-01 | 应用材料公司 | 减少材料表面粗糙度的方法 |
US11515145B2 (en) | 2020-09-11 | 2022-11-29 | Applied Materials, Inc. | Deposition of silicon boron nitride films |
US11676813B2 (en) | 2020-09-18 | 2023-06-13 | Applied Materials, Inc. | Doping semiconductor films |
KR20240023608A (ko) * | 2021-06-18 | 2024-02-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Sib 막들을 증착하기 위한 프로세스들 |
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