CN110168698A - 用于保形密封电介质封闭而无对底层结构材料的直接RF暴露的SiBN膜 - Google Patents

用于保形密封电介质封闭而无对底层结构材料的直接RF暴露的SiBN膜 Download PDF

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CN110168698A
CN110168698A CN201780079463.3A CN201780079463A CN110168698A CN 110168698 A CN110168698 A CN 110168698A CN 201780079463 A CN201780079463 A CN 201780079463A CN 110168698 A CN110168698 A CN 110168698A
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storage
nitrogen
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M·嘉德瑞
S·慕克吉
P·P·杰哈
D·帕德希
段子青
A·B·玛里克
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Applied Materials Inc
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Abstract

本文中公开的实施方式涉及用于形成存储器器件的方法，且更具体地涉及用于在存储器器件中在存储器材料之上形成电介质封闭层的改进的方法。在一个实施方式中，所述方法包括：在比存储器材料的热预算的温度要低的温度下在存储器材料之上热沉积第一材料；将所述第一材料暴露于氮等离子体以将氮掺入在所述第一材料中；和重复所述热沉积和氮等离子体操作以在所述存储器材料之上形成密封的保形电介质封闭层。因此，形成在所述存储器材料之上的具有密封的保形电介质封闭层的存储器器件。

Description

用于保形密封电介质封闭而无对底层结构材料的直接RF暴露 的SiBN膜
背景技术
技术领域
本文中公开的实施方式涉及用于形成存储器器件的方法，且更具体地涉及用于在高纵横比材料之上形成电介质封闭层的方法，所述高纵横比材料是诸如存储单元器件的基于过渡金属的材料。
相关技术的描述
非易失性随机存取存储器(Nonvolatile Random Access Memory；RAM)器件通常地包括几百万个含有基于过渡金属的材料(诸如铜(Cu))的存储单元，其有助于以(一个或多个)0和(一个或多个)1的形式的存储器存储。将存储器材料与管理存储状态的金属互连件介电分离促进最大化存储单元的操作。典型地通过高温、等离子体处理工艺(诸如等离子体增强化学气相沉积(Plasma Enhanced-CVD；PECVD))以达成电介质封闭材料的沉积。然而，存储器材料具有固定的热预算以避免热损伤。另外，存储器材料也对等离子体损伤敏感。如果敏感的存储器材料劣化，则存储器材料的存储能力通常下降或完全消失。
因此，需要用于沉积存储器器件的电介质封闭层的改进的方法。
发明内容
本文中公开的实施方式涉及用于形成存储器器件的方法，且更具体地涉及用于在存储器器件中在存储器材料之上形成电介质封闭层的改进的方法。在一个实施方式中，所述方法包括：在比存储器材料的热预算的温度要低的温度下在存储器材料之上热沉积第一材料；使第一材料暴露于氮等离子体以将氮掺入在第一材料中；和重复热沉积和氮等离子体操作以在存储器材料之上形成密封的保形电介质封闭层。因此，形成在存储器材料之上的具有密封的保形电介质封闭层的存储器器件。
在一个实施方式中，公开一种方法。所述方法包括：通过在比存储器材料的热预算要低的温度下使第一前驱物在存储器材料之上流动以在存储器材料之上热沉积第一材料；使第一材料暴露于氮等离子体以将氮掺入在第一材料中；和重复热沉积第一材料和使第一材料暴露于氮等离子体以在存储器材料之上形成具有预定厚度的电介质封闭层。
在另一实施方式中，公开一种方法。所述方法包括：通过热化学气相沉积工艺在存储器材料之上沉积第一材料，其包括在低于约300℃的温度下在存储器材料之上使包括甲硅烷和乙硅烷中的一种或多种的含硅第一前驱物流动、和使包括乙硼烷的含硼第一前驱物流动、和使含硅第一前驱物与含硼第一前驱物反应以沉积第一材料；使第一材料暴露于氮等离子体，所述氮等离子体包括选自由氮气和氨气组成的群组的一种或多种含氮气体；以及重复沉积第一材料和使第一材料暴露于氮等离子体以在存储器材料之上形成保形的掺杂氮的硼化硅电介质封闭层。
在又一个实施方式中，公开一种存储器器件。存储器器件包括基板、设置在基板的部分之上的存储器材料、以及设置在存储器材料和基板的被暴露的部分之上的包括SiBN的电介质封闭层。
附图简述
为了能够详细地理解本公开内容的上述特征所用方式，可以参考实施方式更具体地描述上文简要概述的本公开内容，实施方式中的一些示出在附图中。然而，应注意，附图仅示出了示例性实施方式，且因此不应视为限制范围，因为本公开文本可以允许其它等效实施方式。
图1为用于沉积电介质封闭层的工艺流程。
图2A到图2C为根据本文中公开的工艺流程而形成的器件的横截面图。
为了便于理解，已在可能的情况下使用相同的附图标号来指定附图共用的相同的元件。应理解，一个实施方式的元件和特征可以有利地并入到其他实施方式中而无需进一步叙述。
具体实施方式
本文中公开的实施方式涉及用于形成存储器器件的方法，且更具体地涉及用于在存储器器件中在存储器材料之上形成电介质封闭层的改进的方法。在一个实施方式中，所述方法包括：在比存储器材料的热预算的温度要低的温度下在存储器材料之上热沉积第一材料；使第一材料暴露于氮等离子体以将氮掺入在第一材料中；和重复热沉积和氮等离子体操作以在存储器材料之上形成密封的保形电介质封闭层。因此，形成在存储器材料之上的具有密封的保形电介质封闭层的存储器器件。
图1为用于沉积电介质封闭层的工艺流程100。工艺流程100在操作110处开始，在存储器材料和器件的基板被暴露的部分之上热沉积第一材料的层。在操作120处，使器件暴露于氮等离子体处理以将氮化物掺入到第一材料中。在操作130处，循环重复操作110和120，直到已在存储器材料和基板的被暴露的部分之上沉积了适当厚度的电介质封闭层为止。工艺流程100在器件的存储器材料之上形成电介质封闭层而未使用可能损伤存储器材料的高温或等离子体处理工艺。
图2A到图2C为根据本文中公开的诸如工艺流程100的工艺流程形成的器件200(诸如存储器器件)的横截面图。如图2A中所示，器件200包括基板210和存储器材料220。基板210通常是(一种或多种)任何适当的基板材料，包括但不限于硅基板材料(包括非晶硅、多晶硅或单晶硅)以及锗或硅锗基板。用于将信息存储到存储器的存储器材料220通常包括(一种或多种)任何适当的存储器材料，包括但不限于铜(Cu)、铁(Fe)、铪(Hr)和/或钴(Co)。存储器材料220通常在基板210之上形成一个或多个特征。在图2A所示的实施方式中，存储器材料220的一个或多个特征由在基板210上且与基板210接触的一个或多个沟槽分离；然而，特征可以是任何适当的形状和大小。在一个实施方式中，器件200具有高纵横比，例如，90纳米(nm)比40nm的纵横比。纵横比通常是指一个或多个特征的高度(h)与宽度(w)的比率。在进一步实施方式中，器件200可具有任何其他适当的纵横比，诸如3∶1、4∶1、5∶4、4∶3、16∶10和16∶9。
在一个实施方式中，热沉积为热化学气相沉积(CVD)。第一材料230的热沉积通常包括在比存储器材料220的热预算要低的工艺温度下使第一材料前驱物在存储器材料220和基板210的被暴露的部分之上流动。在一个实施方式中，工艺温度低于约300摄氏度(℃)，例如在约200℃与约250℃之间，诸如为约235℃。第一前驱物通常包括但不限于含硅(Si)前驱物和/或含硼(B)前驱物。含硅第一前驱物的示例包括但不限于甲硅烷(SiH4)和/或乙硅烷(Si2H6)或更高阶的硅烷。硼第一前驱物的示例为乙硼烷(B2H6)。用于第一前驱物的载气包括但不限于氩气(Ar)和氦气(He)。含硅第一前驱物的气体流速通常在约100标准立方厘米每分钟(sccm)与约700sccm之间。硼第一前驱物的气体流速通常在约20sccm与约400sccm之间。氩气的气体流速通常在约5升每分钟(Lpm)与约10Lpm之间。氦气的气体流速通常在约1Lpm与约5Lpm之间。
第一前驱物彼此反应以在存储器材料220和基板210的被暴露的部分之上形成第一材料230的第一层。在使用含硅和含硼前驱物的示例中，第一材料230为硼化硅(SiBn)材料或掺杂硼的非晶硅(aSi)材料。然而，第一材料可包括可如下文所描述的那样吸收氮的其他材料。由于第一材料230的第一层在低温下且在未使用等离子体的情况下沉积，存储器材料220未受到损伤。然而相比之下，常规的电介质封闭层沉积方法使用高温和/或等离子体处理，这样损伤存储器材料。第一材料230的第一层可在约5埃与约之间，例如在约与约之间或在约与约之间，诸如约
在第一材料230的第一层已经沉积在存储器材料220之上之后，器件200经历氮化工艺。更具体地说，通常使器件200暴露于氮等离子体处理以形成具有氮含量的电介质封闭层240。在一个实施方式中，使器件200暴露于氮等离子体处理以将氮(诸如氮化物)掺入到第一材料230中。氮等离子体处理通常包括使第一材料暴露于含氮气体，诸如氮化气体。含氮气体的示例包括但不限于氮气(N2)和/或氨气(NH3)。氮气的气体流速通常在约5Lpm与约8Lpm之间。氨气的气体流速通常在约500sccm与约2Lpm之间。在约13.56兆赫兹(MHz)的等离子体频率(例如，高频射频)下，用于氮等离子体处理的等离子体功率通常在约100瓦特(W)与约500W之间。
氮等离子体与第一材料230的第一层反应且将氮(例如氮化物)掺入到第一材料230中以形成电介质封闭层240。当含硅和含硼第一前驱物用于沉积第一材料230时，产生的电介质封闭层240包括掺杂氮的硼化硅(SiBN)。
循环重复沉积和氮化工艺直到具有预定厚度的电介质封闭层240已被沉积在存储器材料220和基板210的被暴露的部分之上为止，如图2C中所示。预定厚度可以是例如在约与约之间。在电介质封闭层240的预定厚度为约且工艺流程包括热沉积约的第一材料的实施方式中，通常重复沉积和氮化工艺约10次。在电介质封闭层240的预定厚度为约且工艺流程包括热沉积约的第一材料230的实施方式中，重复沉积和氮化工艺约15次。
所描述的用于沉积电介质封闭层的方法的益处包括但不限于在存储器材料之上形成具有低泄漏电流和高击穿电压的薄的(例如，几纳米或更薄的)、密封的、保形的电介质层而不使存储器材料暴露于高温或等离子体工艺。由于本文中描述的方法在低温下且在未使存储器材料暴露于等离子体的情况下执行，因此维持了存储器材料的完整性以使得存储器材料可有效地存储信息。另外，电介质封闭层的密封特性减少或防止了湿气扩散以及承载存储器的材料所遭受的其他损伤。
本文中描述的实施方式在低温条件下在存储器材料和基板的被暴露的部分之上沉积第一材料。低温条件最小化或避免对存储器材料的损伤，否则由于使用高温或等离子体工艺将导致对存储器材料的损伤。随后，使第一材料暴露于氮化物或氮离子或自由基以将第一膜氮化，因此形成电介质封闭膜。可使用等离子体工艺形成电介质封闭膜，因为第一膜保护存储器材料免遭暴露于等离子体，且因此保护存储器材料免遭由于等离子体暴露而导致的损伤。利用循环沉积和氮化允许最终封闭材料的充分且均匀的氮化。
尽管前述内容考虑在存储器器件(诸如PRAM器件)上沉积电介质封闭层，但本文中描述的方法适用于在期望对其封闭以保护其免遭热量、湿气和/或等离子体的任何对温度敏感的和对等离子体敏感的器件或材料上沉积电介质封闭层。
虽然上述内容针对本公开文本的实施方式，但是也可以在不脱离本公开文本的基本范围的情况下设计本公开文本的其他和进一步实施方式，并且本公开内容的范围由所附权利要求书确定。

Claims (15)

1.一种方法，所述方法包括：
通过在比存储器材料的热预算要低的温度下使第一前驱物在所述存储器材料之上流动来在所述存储器材料之上热沉积第一材料；
使所述第一材料暴露于氮等离子体以将氮掺入在所述第一材料中；和
重复所述热沉积所述第一材料和所述使所述第一材料暴露于所述氮等离子体，以在所述存储器材料之上形成具有预定厚度的电介质封闭层。
2.如权利要求1所述的方法，其中所述温度低于约300℃。
3.如权利要求1所述的方法，其中所述第一前驱物包括含硅前驱物和含硼前驱物。
4.如权利要求3所述的方法，其中所述含硅前驱物包括甲硅烷(SiH4)和乙硅烷(Si2H6)中的一种或多种，且其中所述含硼前驱物为乙硼烷(B2H6)。
5.如权利要求1所述的方法，其中所述氮等离子体包括氮气(N2)和氨气(NH3)中的一种或多种。
6.如权利要求5所述的方法，其中N2的流速在约5Lpm与约8Lpm之间，且其中NH3的流速在约500sccm与约2Lpm之间。
7.如权利要求1所述的方法，其中所述电介质封闭层包括掺杂氮的硼化硅(SiBN)。
8.如权利要求1所述的方法，其中所述电介质封闭层的所述预定厚度在约与约之间。
9.一种方法，所述方法包括：
通过热化学气相沉积工艺在存储器材料之上沉积第一材料，所述热化学气相沉积工艺包括：
使含硅第一前驱物流动，所述含硅第一前驱物包括甲硅烷和乙硅烷中的一种或多种；
在低于约300℃的温度下在所述存储器材料之上使包括乙硼烷的含硼第一前驱物流动；和
使所述含硅第一前驱物与所述含硼第一前驱物反应以沉积所述第一材料；使所述第一材料暴露于氮等离子体，所述氮等离子体包括选自由氮气和氨气组成的群组的一种或多种含氮气体；和
重复所述沉积所述第一材料和所述使所述第一材料暴露于所述氮等离子体，以在所述存储器材料之上形成保形的掺杂氮的硼化硅电介质封闭层。
10.如权利要求9所述的方法，其中所述温度在约200℃与约250℃之间。
11.如权利要求9所述的方法，其中重复所述沉积所述第一材料和所述使所述第一材料暴露于所述氮等离子体约10次到约15次。
12.如权利要求9所述的方法，其中所述含硅第一前驱物的流速在约100sccm与约700sccm之间，且其中所述含硼第一前驱物的流速通常在约20sccm与约400sccm之间。
13.如权利要求9所述的方法，其中用于所述使所述第一材料暴露于氮等离子体的等离子体功率在约100W与约500W之间。
14.一种存储器器件，所述存储器器件包括：
基板；
存储器材料的一个或多个高纵横比特征，所述存储器材料的一个或多个高纵横比特征设置在所述基板的部分之上；和
电介质封闭层，所述电介质封闭层包括SiBN，所述电介质封闭层设置在所述存储器材料和所述基板的被暴露的部分之上。
15.如权利要求14所述的存储器器件，其中所述电介质封闭层的厚度在约与约之间。
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