JPWO2020142307A5 - - Google Patents

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JPWO2020142307A5
JPWO2020142307A5 JP2021538968A JP2021538968A JPWO2020142307A5 JP WO2020142307 A5 JPWO2020142307 A5 JP WO2020142307A5 JP 2021538968 A JP2021538968 A JP 2021538968A JP 2021538968 A JP2021538968 A JP 2021538968A JP WO2020142307 A5 JPWO2020142307 A5 JP WO2020142307A5
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sccm
flow
process gas
nitride layer
flow rate
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JP2021538968A
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Japanese (ja)
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JP7518835B2 (ja
JP2022516312A (ja
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Priority claimed from PCT/US2019/068270 external-priority patent/WO2020142307A1/en
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Priority to JP2024066173A priority Critical patent/JP7798952B2/ja
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JP2021538968A 2019-01-02 2019-12-23 漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法 Active JP7518835B2 (ja)

Priority Applications (1)

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JP2024066173A JP7798952B2 (ja) 2019-01-02 2024-04-16 漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法

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Application Number Priority Date Filing Date Title
US201962787666P 2019-01-02 2019-01-02
US62/787,666 2019-01-02
PCT/US2019/068270 WO2020142307A1 (en) 2019-01-02 2019-12-23 Methods for forming films containing silicon boron with low leakage current

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JP2022516312A JP2022516312A (ja) 2022-02-25
JPWO2020142307A5 true JPWO2020142307A5 (enExample) 2023-01-10
JP7518835B2 JP7518835B2 (ja) 2024-07-18

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JP2021538968A Active JP7518835B2 (ja) 2019-01-02 2019-12-23 漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法
JP2024066173A Active JP7798952B2 (ja) 2019-01-02 2024-04-16 漏れ電流が少ない、ケイ素ホウ素を含む膜の形成方法

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US (2) US20200211834A1 (enExample)
JP (2) JP7518835B2 (enExample)
KR (2) KR102769720B1 (enExample)
CN (2) CN113316835B (enExample)
SG (1) SG11202107157RA (enExample)
TW (2) TWI851643B (enExample)
WO (1) WO2020142307A1 (enExample)

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US12033848B2 (en) * 2021-06-18 2024-07-09 Applied Materials, Inc. Processes for depositing sib films

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