JP2016204685A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016204685A5 JP2016204685A5 JP2015085018A JP2015085018A JP2016204685A5 JP 2016204685 A5 JP2016204685 A5 JP 2016204685A5 JP 2015085018 A JP2015085018 A JP 2015085018A JP 2015085018 A JP2015085018 A JP 2015085018A JP 2016204685 A5 JP2016204685 A5 JP 2016204685A5
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- vacuum chamber
- gas
- pressure
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 13
- 229910003468 tantalcarbide Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- -1 Organosilane compounds Chemical class 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- UIDUKLCLJMXFEO-UHFFFAOYSA-N propylsilane Chemical compound CCC[SiH3] UIDUKLCLJMXFEO-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015085018A JP6474673B2 (ja) | 2015-04-17 | 2015-04-17 | ガスバリア性プラスチック成形体及びその製造方法 |
| MYPI2017703465A MY186446A (en) | 2015-04-17 | 2016-04-05 | Gas-barrier plastic molded product and method for manufacturing same |
| PCT/JP2016/061070 WO2016167152A1 (ja) | 2015-04-17 | 2016-04-05 | ガスバリア性プラスチック成形体及びその製造方法 |
| CN201680021428.1A CN107429392B (zh) | 2015-04-17 | 2016-04-05 | 阻气性塑料成型体及其制造方法 |
| US15/566,515 US10487397B2 (en) | 2015-04-17 | 2016-04-05 | Gas-barrier plastic molded product and method for manufacturing same |
| KR1020177032902A KR20170138476A (ko) | 2015-04-17 | 2016-04-05 | 가스 배리어성 플라스틱 성형체 및 그 제조 방법 |
| AU2016248605A AU2016248605A1 (en) | 2015-04-17 | 2016-04-05 | Gas-barrier plastic molded product and method for manufacturing same |
| SG11201708290QA SG11201708290QA (en) | 2015-04-17 | 2016-04-05 | Gas-barrier plastic molded product and method for manufacturing same |
| EP16779943.6A EP3284846B1 (en) | 2015-04-17 | 2016-04-05 | Gas-barrier plastic molded product and method for manufacturing same |
| TW105111263A TWI686497B (zh) | 2015-04-17 | 2016-04-11 | 阻氣性塑膠成形體及其製造方法 |
| PH12017501752A PH12017501752A1 (en) | 2015-04-17 | 2017-09-25 | Gas-barrier plastic molded product and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015085018A JP6474673B2 (ja) | 2015-04-17 | 2015-04-17 | ガスバリア性プラスチック成形体及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016204685A JP2016204685A (ja) | 2016-12-08 |
| JP2016204685A5 true JP2016204685A5 (enExample) | 2018-01-25 |
| JP6474673B2 JP6474673B2 (ja) | 2019-02-27 |
Family
ID=57126273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015085018A Active JP6474673B2 (ja) | 2015-04-17 | 2015-04-17 | ガスバリア性プラスチック成形体及びその製造方法 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US10487397B2 (enExample) |
| EP (1) | EP3284846B1 (enExample) |
| JP (1) | JP6474673B2 (enExample) |
| KR (1) | KR20170138476A (enExample) |
| CN (1) | CN107429392B (enExample) |
| AU (1) | AU2016248605A1 (enExample) |
| MY (1) | MY186446A (enExample) |
| PH (1) | PH12017501752A1 (enExample) |
| SG (1) | SG11201708290QA (enExample) |
| TW (1) | TWI686497B (enExample) |
| WO (1) | WO2016167152A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016133220A1 (ja) * | 2015-02-18 | 2016-08-25 | キリン株式会社 | 発熱体及びその製造方法 |
| JP2018095937A (ja) * | 2016-12-15 | 2018-06-21 | 三菱重工機械システム株式会社 | 電極状態評価装置、成膜装置及び電極状態評価方法 |
| JP7163041B2 (ja) * | 2018-03-13 | 2022-10-31 | 東レエンジニアリング株式会社 | バリアフィルムおよび光変換部材 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2001250886A1 (en) * | 2000-03-20 | 2001-10-03 | N V. Bekaert S.A. | Materials having low dielectric constants and methods of making |
| JP2004107689A (ja) * | 2002-09-13 | 2004-04-08 | Ulvac Japan Ltd | ダイヤモンド状炭素膜形成方法及び製造装置 |
| US7288311B2 (en) * | 2003-02-10 | 2007-10-30 | Dai Nippon Printing Co., Ltd. | Barrier film |
| AU2006250336B2 (en) | 2005-05-27 | 2011-07-21 | Kirin Beer Kabushiki Kaisha | Apparatus for manufacturing gas barrier plastic container, method for manufacturing the container, and the container |
| JP5290564B2 (ja) * | 2007-11-13 | 2013-09-18 | トーヨーエイテック株式会社 | 炭素質薄膜 |
| WO2010067857A1 (ja) * | 2008-12-12 | 2010-06-17 | リンテック株式会社 | 積層体、その製造方法、電子デバイス部材および電子デバイス |
| WO2010134609A1 (ja) * | 2009-05-22 | 2010-11-25 | リンテック株式会社 | 成形体、その製造方法、電子デバイス用部材および電子デバイス |
| BR112013015637A2 (pt) * | 2010-12-28 | 2016-10-11 | Kirin Brewery | método para produzir um corpo de plástico moldado de barreira de gás ao formar uma película fina de barreira de gás sobre a superfície de um corpo de plástico moldado |
| BR112013015633A2 (pt) * | 2010-12-28 | 2016-10-11 | Kirin Brewery | produto de plástico moldado de barreira de gás e método para produzir um produto de plástico moldado de barreira de gás |
| JP5706777B2 (ja) * | 2011-07-25 | 2015-04-22 | 麒麟麦酒株式会社 | ガスバリア性プラスチック成形体 |
| JP5809711B2 (ja) | 2011-12-27 | 2015-11-11 | 麒麟麦酒株式会社 | 薄膜の成膜装置及び成膜方法 |
| TWI576242B (zh) * | 2011-12-28 | 2017-04-01 | Kirin Brewery | Gas barrier plastic molded body and manufacturing method thereof |
| JP6009243B2 (ja) * | 2012-06-27 | 2016-10-19 | 麒麟麦酒株式会社 | 炭酸飲料用ボトル及びその製造方法 |
-
2015
- 2015-04-17 JP JP2015085018A patent/JP6474673B2/ja active Active
-
2016
- 2016-04-05 WO PCT/JP2016/061070 patent/WO2016167152A1/ja not_active Ceased
- 2016-04-05 KR KR1020177032902A patent/KR20170138476A/ko not_active Withdrawn
- 2016-04-05 CN CN201680021428.1A patent/CN107429392B/zh active Active
- 2016-04-05 US US15/566,515 patent/US10487397B2/en active Active
- 2016-04-05 AU AU2016248605A patent/AU2016248605A1/en not_active Abandoned
- 2016-04-05 EP EP16779943.6A patent/EP3284846B1/en active Active
- 2016-04-05 SG SG11201708290QA patent/SG11201708290QA/en unknown
- 2016-04-05 MY MYPI2017703465A patent/MY186446A/en unknown
- 2016-04-11 TW TW105111263A patent/TWI686497B/zh not_active IP Right Cessation
-
2017
- 2017-09-25 PH PH12017501752A patent/PH12017501752A1/en unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105917024B (zh) | 耐热复合材料的制造方法及制造装置 | |
| TWI674328B (zh) | 藉由原子層沉積疏水化含矽薄膜表面的方法 | |
| JP2007516355A5 (enExample) | ||
| CN103582719B (zh) | 用于沉积碳掺杂含硅膜的组合物和方法 | |
| JP3828540B2 (ja) | 低誘電常数薄膜の製造方法及び水素化されたシリコンオキシカーバイド(SiCO:H)薄膜 | |
| US9431240B2 (en) | Method of manufacturing semiconductor device | |
| JP2021181629A (ja) | 二次元材料を製造する方法 | |
| CN104109846B (zh) | 半导体器件的制造方法及衬底处理装置 | |
| US20180012752A1 (en) | Method and apparatus for selective film deposition using a cyclic treatment | |
| JP2014143416A5 (enExample) | ||
| JP4108999B2 (ja) | 積層フィルム | |
| JP2012513117A5 (enExample) | ||
| JP2015146461A5 (enExample) | ||
| KR20140035830A (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 | |
| CN101171366A (zh) | 形成含氧化硅的薄膜的方法 | |
| KR101398334B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 기록 매체 | |
| KR20130103444A (ko) | 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 컴퓨터 판독가능한 기록 매체 | |
| KR101786301B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
| JP2012124492A5 (enExample) | ||
| US20150196933A1 (en) | Carbon dioxide and carbon monoxide mediated curing of low k films to increase hardness and modulus | |
| TW202309327A (zh) | 經由選擇性沉積及電阻率降低的完全對準貫孔之整合 | |
| CN107112278A (zh) | 用于先进互连应用的超薄电介质扩散阻挡层与蚀刻终止层 | |
| CN106488924A (zh) | 新的氨基‑甲硅烷基胺化合物以及通过使用原子层沉积制造包含Si‑N键的介电膜的方法 | |
| JP2016204685A5 (enExample) | ||
| TW202012419A (zh) | 矽化合物及使用其沉積膜的方法 |