JP2007507091A - マスキング方法 - Google Patents
マスキング方法 Download PDFInfo
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- JP2007507091A JP2007507091A JP2006523958A JP2006523958A JP2007507091A JP 2007507091 A JP2007507091 A JP 2007507091A JP 2006523958 A JP2006523958 A JP 2006523958A JP 2006523958 A JP2006523958 A JP 2006523958A JP 2007507091 A JP2007507091 A JP 2007507091A
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- 238000000034 method Methods 0.000 title claims abstract description 87
- 230000000873 masking effect Effects 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 100
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052796 boron Inorganic materials 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 72
- 125000006850 spacer group Chemical group 0.000 claims abstract description 59
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 57
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims description 21
- 238000000206 photolithography Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 18
- 239000012634 fragment Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000002194 amorphous carbon material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
【選択図】 図1
Description
この発明は、集積回路の加工において半導体基板をマスキングする方法に関する。
背景技術
集積回路は、典型的には、シリコンウェーハまたは他の半導性材料のような半導体基板の上に形成される。一般に、半導性、導電性または絶縁性のいずれかである各種材料の層が集積回路を形成するために利用される。例としてであるが、それら各種材料は、色々な方法を用いてドーピングされ、イオン注入され、堆積され、エッチングされ、成長処理等々がなされる。半導体加工の継続的目標は、個々の電子部品の大きさを小さくし、それによってより小さく、より密な集積回路設計を可能にする努力を続けることである。
本発明はマスキング方法を包含する。1つの実施において、ホウ素ドープアモルファスカーボンを含むマスキング材料が、半導体基板上に形成されているフィーチャー(feature)を覆って形成される。マスキング材料は少なくとも約0.5原子パーセントのホウ素を含む。マスキング材料は実質上異方的にエッチングされ、ここでそのエッチングは、ホウ素ドープアモルファスカーボンを含む異方的にエッチングされたサイドウォールスペーサをフィーチャーのサイドウォール上に形成するのに有効である。次に、スペーサに最も近い基板が、ホウ素ドープアモルファスカーボンを含むスペーサをマスクとして使用しながら加工される。スペーサに最も近い基板を加工した後、ホウ素ドープアモルファスカーボンを含むスペーサが基板からエッチングされる。
以下においては本発明の好ましい態様が次の添付図面を参照して説明される。
好ましい態様の詳細な説明
初めに、本発明による典型的なマスキング方法が図1−8を参照して説明される。初めに図1を参照すると、半導体基板の断片が参照数字10で一般的に示される。この明細書の文脈において、用語「半導体(semiconductor)基板」または「半導性(semiconductive)基板」は、限定されるものではないが(単独または上に他の材料を含む集成材のいずれかでの)半導性ウェーハのようなバルク半導性材料、および(単独または他の材料を含む集成材のいずれかでの)半導性材料層を含めて半導性材料を含むいかなる構造体(construction)をも意味すると定義される。用語「基板」は、限定されるものではないが上記の半導性基板を含めていかなる支持構造物(structure)をも指す。また、この明細書の文脈において、用語「層」は、特に指摘されなければ、単独または複数の層の両者を包含する。
例としてだけであるが、もう1つ別の典型的な加工が図13−15を参照して説明されている。図13は半導性基板材料72を含む基板断片70を描く。材料72を覆って層74、例えば二酸化ケイ素層が形成される。もう1つの層76、例えばホウ素でドープされていないアモルファスカーボンが材料74の上に受け入れられる。壁78を有する開口77が層76を貫通して形成される。壁78は、開口77の少なくともある部分を画成する層76の隣接するフィーチャーの一部と考えることができる。考えられる1つの典型的な面では、フィーチャー78は、ある最小開口寸法、例えば開口77を画成する最も近い壁の間の分離距離に相当する寸法“C”を有するマスクを使用してフォトリソグラフィー加工することによって形成してもよいだろう。前記の寸法“A”に関してと同様に、寸法“C”は、例えばフォトリソグラフィー加工のアスペクトおよび/または収差に依存するが、図13に示される構造物間に得られる寸法“C”よりもマスク/レチクルが僅かに小さくてもよいし、或いは僅かに大きくてもよいだろう。考えられる1つの実施において、そのような最小開口寸法(例えば、寸法“C”)は、理想的には、マスキング方法および本明細書で説明されている諸方法の前後に半導体基板のどんなそして全てのフォトリソグラフィー加工で利用される最も小さい開口寸法である。例えば、フォトリソグラフィー加工によってフィーチャー78間に達成される間隔は、基板を加工する時点で製造可能なプロセスにおいて技術的に達成できる最も小さい寸法であってもよい。
図15を参照すると、ホウ素ドープアモルファスカーボンを含むスペーサ82は、例えば上記の加工を用いて基板からエッチングされた。
Claims (44)
- マスキング方法であって:
ホウ素ドープアモルファスカーボンを含むマスキング材料を半導体基板上に形成されたフィーチャーを覆って形成し、ここで上記マスキング材料は少なくとも約0.5原子パーセントのホウ素を含み;
上記マスキング材料を実質的に異方的にエッチングし、ここでそのエッチングは上記ホウ素ドープアモルファスカーボンを含む異方的にエッチングされたサイドウォールスペーサを上記フィーチャーのサイドウォール上に形成するのに有効であり;
上記のホウ素ドープアモルファスカーボンを含むスペーサを上記スペーサに最も近い基板を加工している間マスクとして使用し;そして
基板の該加工後に、上記のホウ素ドープアモルファスカーボンを含むスペーサをその基板からエッチングする
工程を含む上記の方法。 - 上にマスキング材料が形成されているフィーチャーが、ホウ素でドープされていないアモルファスカーボンを含む、請求項1に記載の方法。
- マスキング材料がホウ素でドープされていないアモルファスカーボン上に形成される、請求項2に記載の方法。
- マスキング材料が一対の隣接するフィーチャーを覆って形成され、ここで実質的に異方的にエッチングする工程が一対の離間した隣接する異方的にエッチングされたサイドウォールスペーサを形成するのに有効である、請求項1に記載の方法。
- 隣接するフィーチャーが最小開口寸法を有するマスクを使用してフォトリソグラフィー加工することによって形成され;ここで該最小開口寸法は該マスキング方法の前後に半導体基板のどんなおよび全てのフォトリソグラフィー加工において利用される最も小さい開口寸法であり;そして
隣接する異方的にエッチングされたサイドウォールスペーサは、上記の最も小さい開口寸法よりも小さい最短距離によって分離されている、
請求項4に記載の方法。 - マスキング材料がホウ素ドープアモルファスカーボンより本質的に成る、請求項1に記載の方法。
- マスキング材料がホウ素ドープアモルファスカーボンより成る請求項1に記載の方法。
- マスキング材料の形成工程がCVDを含む、請求項1に記載の方法。
- CVDがプラズマ増速される、請求項8に記載の方法。
- CVDがプラズマ増速されない、請求項8に記載の方法。
- ホウ素ドーピングがCVD中に起こる、請求項8に記載の方法。
- ホウ素ドーピングがCVD後に起こる、請求項8に記載の方法。
- マスキング材料の形成工程がC2H6、C2H4、C2H2、C3H6およびC3H8の少なくとも1種を用い;かつB2H6、B4H10およびBH3COの少なくとも1種を用いるCVDを含む、請求項1に記載の方法。
- CVDがプラズマ増速される、請求項13に記載の方法。
- CVDがプラズマ増速されない、請求項13に記載の方法。
- フィーチャーのサイドウォールが基板に対して実質的に垂直である、請求項1に記載の方法。
- マスキング材料が1.0〜5.0原子パーセントのホウ素を含む、請求項1に記載の方法。
- マスキング材料が5.0原子パーセント超から10.0原子パーセントまでのホウ素を含む、請求項1に記載の方法。
- マスキング材料が10.0原子パーセント超から15.0原子パーセントまでのホウ素を含む、請求項1に記載の方法。
- マスキング材料が15.0原子パーセント超から20.0原子パーセントまでのホウ素を含む、請求項1に記載の方法。
- マスキング材料が20.0原子パーセント超から75.0原子パーセントまでのホウ素を含む、請求項1に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサをマスクとして用いて基板を加工する工程が、基板をエッチングすることを含む、請求項1に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサをマスクとして用いて基板を加工する工程が、基板にイオン注入することを含む、請求項1に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサをマスクとして用いて基板を加工する工程が、基板上への堆積を含む、請求項1に記載の方法。
- エッチングがO2を含むプラズマによる、請求項1に記載の方法。
- 基板の加工後にその基板からフィーチャーをエッチングすることをさらに含む、請求項1に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサが基板からエッチングされた後、フィーチャーが基板からエッチングされる、請求項26に記載の方法。
- マスキング方法であって:
ホウ素ドープアモルファスカーボンを含むマスキング材料を半導体基板上に形成されたフィーチャーを覆って化学蒸着し、ここで上記マスキング材料は約1.0〜約20原子パーセントのホウ素を含み;
上記マスキング材料を実質的に異方的にエッチングし、ここでそのエッチングは上記ホウ素ドープアモルファスカーボンを含む異方的にエッチングされたサイドウォールスペーサを上記フィーチャーのサイドウォール上に形成するのに有効であり;
上記のホウ素ドープアモルファスカーボンを含むスペーサを上記スペーサに最も近い基板を加工している間マスクとして使用し;そして
基板の該加工後に、上記のホウ素ドープアモルファスカーボンを含むスペーサを、その基板から、露出した二酸化ケイ素、窒化ケイ素およびケイ素の少なくとも1種に対して実質的に選択性のO2を含むプラズマを用いてエッチングする
工程を含む上記の方法。 - 上にマスキング材料が形成されているフィーチャーが、ホウ素でドープされていないアモルファスカーボンを含む、請求項28に記載の方法。
- マスキング材料がホウ素でドープされていないアモルファスカーボン上に形成される、請求項29に記載の方法。
- マスキング材料が一対の隣接するフィーチャーを覆って形成され、ここで実質的に異方的にエッチングする工程が、一対の離間した隣接する異方的にエッチングされたサイドウォールスペーサを形成するのに有効である、請求項28に記載の方法。
- 隣接するフィーチャーが最小開口寸法を有するマスクを使用してフォトリソグラフィー加工することによって形成され;ここで該最小開口寸法はマスキング方法の前後に半導体基板のどんなおよび全てのフォトリソグラフィー加工において利用される最も小さい開口寸法であり;そして
隣接する異方的にエッチングされたサイドウォールスペーサは、上記の最も小さい開口寸法よりも小さい最短距離によって分離されている
請求項31に記載の方法。 - マスキング材料がホウ素ドープアモルファスカーボンより本質的に成る、請求項28に記載の方法。
- CVDがプラズマ増速される、請求項28に記載の方法。
- CVDがプラズマ増速されない、請求項28に記載の方法。
- ホウ素ドーピングがCVD中に起こる、請求項28に記載の方法。
- ホウ素ドーピングがCVD後に起こる、請求項28に記載の方法。
- 化学蒸着工程がC2H6、C2H4、C2H2、C3H6およびC3H8の少なくとも1種を用い;かつB2H6、B4H10およびBH3COの少なくとも1種を用いる、請求項28に記載の方法。
- フィーチャーのサイドウォールが基板に対して実質的に垂直である、請求項28に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサをマスクとして用いて基板を加工する工程が、基板をエッチングすることを含む、請求項28に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサをマスクとして用いて基板を加工する工程が、基板中にイオン注入することを含む、請求項28に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサをマスクとして用いて基板を加工する工程が、基板上への堆積を含む、請求項28に記載の方法。
- 基板の加工後にその基板からフィーチャーをエッチングすることをさらに含む、請求項28に記載の方法。
- ホウ素ドープアモルファスカーボンを含むスペーサが基板からエッチングされた後、フィーチャーが基板からエッチングされる、請求項43に記載の方法。
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KR100679375B1 (ko) | 2007-02-07 |
US20050042879A1 (en) | 2005-02-24 |
JP4466651B2 (ja) | 2010-05-26 |
TWI287827B (en) | 2007-10-01 |
US7105431B2 (en) | 2006-09-12 |
TW200529293A (en) | 2005-09-01 |
EP1656693A1 (en) | 2006-05-17 |
CN1839465B (zh) | 2012-05-23 |
US7470606B2 (en) | 2008-12-30 |
US20060264018A1 (en) | 2006-11-23 |
CN1839465A (zh) | 2006-09-27 |
EP1656693B1 (en) | 2013-06-19 |
KR20060032648A (ko) | 2006-04-17 |
WO2005022617A1 (en) | 2005-03-10 |
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