JP2007502536A - 新規な金属ストリップ - Google Patents

新規な金属ストリップ Download PDF

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Publication number
JP2007502536A
JP2007502536A JP2006523160A JP2006523160A JP2007502536A JP 2007502536 A JP2007502536 A JP 2007502536A JP 2006523160 A JP2006523160 A JP 2006523160A JP 2006523160 A JP2006523160 A JP 2006523160A JP 2007502536 A JP2007502536 A JP 2007502536A
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JP
Japan
Prior art keywords
layer
coated steel
steel product
metal
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006523160A
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English (en)
Japanese (ja)
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JP2007502536A5 (enExample
Inventor
シュイスキュー，ミカエル
セダーグレン，マグヌス
Original Assignee
サンドビック インテレクチュアル プロパティー アクティエボラーグ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by サンドビック インテレクチュアル プロパティー アクティエボラーグ filed Critical サンドビック インテレクチュアル プロパティー アクティエボラーグ
Publication of JP2007502536A publication Critical patent/JP2007502536A/ja
Publication of JP2007502536A5 publication Critical patent/JP2007502536A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP2006523160A 2003-08-12 2004-08-09 新規な金属ストリップ Pending JP2007502536A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0302206A SE525704C2 (sv) 2003-08-12 2003-08-12 Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller
PCT/SE2004/001173 WO2005015645A1 (en) 2003-08-12 2004-08-09 New metal strip product

Publications (2)

Publication Number Publication Date
JP2007502536A true JP2007502536A (ja) 2007-02-08
JP2007502536A5 JP2007502536A5 (enExample) 2007-08-02

Family

ID=27800883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006523160A Pending JP2007502536A (ja) 2003-08-12 2004-08-09 新規な金属ストリップ

Country Status (7)

Country Link
US (1) US7989077B2 (enExample)
EP (1) EP1665390A1 (enExample)
JP (1) JP2007502536A (enExample)
KR (1) KR101077046B1 (enExample)
CN (1) CN100499174C (enExample)
SE (1) SE525704C2 (enExample)
WO (1) WO2005015645A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009041657A1 (ja) * 2007-09-28 2009-04-02 Fujifilm Corporation 太陽電池用基板および太陽電池
WO2010082642A1 (en) * 2009-01-16 2010-07-22 Fujifilm Corporation Photoelectric conversion device and solar cell using the same
EP2228467A2 (en) 2009-03-11 2010-09-15 Fujifilm Corporation Aluminum alloy substrate and solar cell substrate
JP2010239129A (ja) * 2009-03-10 2010-10-21 Fujifilm Corp 光電変換素子及び太陽電池、光電変換素子の製造方法
EP2248662A1 (en) 2009-05-01 2010-11-10 Fujifilm Corporation Metal composite substrate and method of producing the same
WO2012099187A1 (ja) * 2011-01-21 2012-07-26 日新製鋼株式会社 Ｃｉｓ太陽電池用電極基板および電池
JP2012521081A (ja) * 2009-03-19 2012-09-10 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ポリシラザンをベースとするバリア層を備えた太陽電池
KR20140019432A (ko) 2011-04-05 2014-02-14 후지필름 가부시키가이샤 절연층이 부착된 금속 기판과 그 제조 방법 및 반도체 장치
JP2014042083A (ja) * 2009-09-02 2014-03-06 Electronics And Telecommunications Research Institute 太陽電池
WO2014162899A1 (ja) 2013-04-03 2014-10-09 昭和シェル石油株式会社 薄膜太陽電池

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE527179C2 (sv) 2003-12-05 2006-01-17 Sandvik Intellectual Property Tunnfilmssolcell eller tunnfilmsbatteri, innefattande en zirkoniumoxidbelagd bandprodukt av ferritiskt kromstål
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
KR20070064345A (ko) * 2004-09-18 2007-06-20 나노솔라, 인크. 포일 기판 상의 태양 전지의 형성
WO2006047207A2 (en) 2004-10-21 2006-05-04 University Of Delaware Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
CN101438417B (zh) * 2006-03-14 2011-04-06 科鲁斯技术有限公司 包含金属衬底的基于黄铜矿半导体的光伏太阳能电池、用于光伏太阳能电池的被涂敷的金属衬底及其制造方法
US8101858B2 (en) * 2006-03-14 2012-01-24 Corus Technology B.V. Chalcopyrite semiconductor based photovoltaic solar cell comprising a metal substrate, coated metal substrate for a photovoltaic solar cell and manufacturing method thereof
EP2176887A2 (en) * 2007-03-30 2010-04-21 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
DE102007042616A1 (de) * 2007-09-07 2009-03-12 Emitec Gesellschaft Für Emissionstechnologie Mbh Metallische Folie zur Herstellung von Wabenkörpern und daraus hergestellter Wabenkörper
EP2463395B1 (en) 2009-08-06 2019-10-30 Nippon Steel Corporation Steel sheet for radiation heating, method of manufacturing the same, and steel processed product having portion with different strength and method of manufacturing the same
CN101673777B (zh) * 2009-10-13 2011-04-27 华东师范大学 一种柔性铜铟镓硒薄膜太阳能电池
CN102074615B (zh) * 2009-11-20 2012-10-03 正峰新能源股份有限公司 太阳能电池吸收层的非真空涂布方法
JP4700130B1 (ja) * 2010-02-01 2011-06-15 富士フイルム株式会社 絶縁性金属基板および半導体装置
JP5970796B2 (ja) * 2010-12-10 2016-08-17 Ｊｆｅスチール株式会社 太陽電池基板用鋼箔およびその製造方法、並びに太陽電池基板、太陽電池およびその製造方法
EP2720276A4 (en) * 2011-06-10 2014-12-24 Posco SOLAR CELL SUBSTRATE, MANUFACTURING METHOD AND SOLAR CELL THEREFOR
KR101374690B1 (ko) 2011-11-16 2014-03-31 한국생산기술연구원 Ｃｉｇｓ 태양전지용 철-니켈 합금 금속 포일 기판재
US8916954B2 (en) 2012-02-05 2014-12-23 Gtat Corporation Multi-layer metal support
US20130200497A1 (en) * 2012-02-05 2013-08-08 Twin Creeks Technologies, Inc. Multi-layer metal support
US8841161B2 (en) 2012-02-05 2014-09-23 GTAT.Corporation Method for forming flexible solar cells
CN103258896A (zh) * 2012-02-17 2013-08-21 任丘市永基光电太阳能有限公司 柔性cigs薄膜太阳电池吸收层制备工艺
CN103296130A (zh) * 2012-03-05 2013-09-11 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上CIGS吸收层的Na掺杂方法
CH706216A1 (de) * 2012-03-12 2013-09-13 Von Roll Solar Ag Substrat für elektrische oder elektronische Bauteile.
KR101315311B1 (ko) * 2012-07-13 2013-10-04 한국에너지기술연구원 후면전극 및 이를 포함하는 ｃｉｓ계 태양전지
US8785294B2 (en) 2012-07-26 2014-07-22 Gtat Corporation Silicon carbide lamina
KR101482391B1 (ko) * 2013-04-17 2015-01-14 주식회사 포스코 박막형 태양전지용 기판의 제조방법
KR101428419B1 (ko) * 2013-08-30 2014-08-08 주식회사 포스코 절연특성이 우수한 태양전지용 기판 및 그 제조방법
KR101510542B1 (ko) * 2013-10-18 2015-04-08 주식회사 포스코 평탄화 특성 및 절연특성이 우수한 태양전지용 기판 및 그 제조방법
CN105097980B (zh) * 2014-05-14 2018-08-03 香港中文大学 薄膜太阳能电池及其制造方法
KR102462688B1 (ko) * 2020-07-17 2022-11-04 한국전력공사 유연 태양전지 및 이의 제조 방법
CN114759106B (zh) 2021-01-12 2024-03-08 宝山钢铁股份有限公司 一种适用于内联式薄膜光伏组件的涂镀钢板及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173873A (ja) * 1982-04-05 1983-10-12 Hitachi Ltd 非晶質シリコン太陽電池およびその製造方法
JPH04234177A (ja) * 1990-12-28 1992-08-21 Sanyo Electric Co Ltd 光起電力装置
JPH11261090A (ja) * 1998-03-09 1999-09-24 Nisshin Steel Co Ltd 太陽電池用基板及びその製造方法
JP2001185747A (ja) * 1999-12-24 2001-07-06 Nisshin Steel Co Ltd 耐熱性に優れた太陽電池用絶縁基板及びその製造方法
JP2001339081A (ja) * 2000-03-23 2001-12-07 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法

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CA1308778C (en) * 1988-07-01 1992-10-13 Nobuhiro Furukawa Non-aqueous electrolyte cell
JP3019326B2 (ja) * 1989-06-30 2000-03-13 松下電器産業株式会社 リチウム二次電池
SE508676C2 (sv) * 1994-10-21 1998-10-26 Nordic Solar Energy Ab Förfarande för framställning av tunnfilmssolceller
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
US6258620B1 (en) * 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
DE10024882A1 (de) 2000-05-19 2001-11-29 Zsw Verfahren zur Herstellung einer photoelektrisch aktiven Verbindungshalbleiterschicht mit Alkalimetall-Dotieranteil
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS58173873A (ja) * 1982-04-05 1983-10-12 Hitachi Ltd 非晶質シリコン太陽電池およびその製造方法
JPH04234177A (ja) * 1990-12-28 1992-08-21 Sanyo Electric Co Ltd 光起電力装置
JPH11261090A (ja) * 1998-03-09 1999-09-24 Nisshin Steel Co Ltd 太陽電池用基板及びその製造方法
JP2001185747A (ja) * 1999-12-24 2001-07-06 Nisshin Steel Co Ltd 耐熱性に優れた太陽電池用絶縁基板及びその製造方法
JP2001339081A (ja) * 2000-03-23 2001-12-07 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009041657A1 (ja) * 2007-09-28 2009-04-02 Fujifilm Corporation 太陽電池用基板および太陽電池
WO2010082642A1 (en) * 2009-01-16 2010-07-22 Fujifilm Corporation Photoelectric conversion device and solar cell using the same
JP2010165878A (ja) * 2009-01-16 2010-07-29 Fujifilm Corp 光電変換素子、及びこれを用いた太陽電池
JP2010239129A (ja) * 2009-03-10 2010-10-21 Fujifilm Corp 光電変換素子及び太陽電池、光電変換素子の製造方法
EP2228467A2 (en) 2009-03-11 2010-09-15 Fujifilm Corporation Aluminum alloy substrate and solar cell substrate
JP2012521081A (ja) * 2009-03-19 2012-09-10 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ポリシラザンをベースとするバリア層を備えた太陽電池
EP2248662A1 (en) 2009-05-01 2010-11-10 Fujifilm Corporation Metal composite substrate and method of producing the same
JP2014042083A (ja) * 2009-09-02 2014-03-06 Electronics And Telecommunications Research Institute 太陽電池
WO2012099187A1 (ja) * 2011-01-21 2012-07-26 日新製鋼株式会社 Ｃｉｓ太陽電池用電極基板および電池
KR20140019432A (ko) 2011-04-05 2014-02-14 후지필름 가부시키가이샤 절연층이 부착된 금속 기판과 그 제조 방법 및 반도체 장치
WO2014162899A1 (ja) 2013-04-03 2014-10-09 昭和シェル石油株式会社 薄膜太陽電池

Also Published As

Publication number Publication date
CN1836338A (zh) 2006-09-20
SE0302206L (sv) 2005-02-13
SE525704C2 (sv) 2005-04-05
US20080257404A1 (en) 2008-10-23
US7989077B2 (en) 2011-08-02
WO2005015645A1 (en) 2005-02-17
KR101077046B1 (ko) 2011-10-26
CN100499174C (zh) 2009-06-10
EP1665390A1 (en) 2006-06-07
KR20060115990A (ko) 2006-11-13
SE0302206D0 (sv) 2003-08-12

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