CN100499174C - 金属带产品 - Google Patents

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Publication number
CN100499174C
CN100499174C CNB2004800231532A CN200480023153A CN100499174C CN 100499174 C CN100499174 C CN 100499174C CN B2004800231532 A CNB2004800231532 A CN B2004800231532A CN 200480023153 A CN200480023153 A CN 200480023153A CN 100499174 C CN100499174 C CN 100499174C
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CN
China
Prior art keywords
layer
metal
steel product
coated steel
metal strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2004800231532A
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English (en)
Chinese (zh)
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CN1836338A (zh
Inventor
米卡埃尔·舒伊斯凯
马格纳斯·塞德格伦
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Sandvik Intellectual Property AB
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Sandvik Intellectual Property AB
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Publication of CN1836338A publication Critical patent/CN1836338A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Laminated Bodies (AREA)
CNB2004800231532A 2003-08-12 2004-08-09 金属带产品 Expired - Fee Related CN100499174C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0302206A SE525704C2 (sv) 2003-08-12 2003-08-12 Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller
SE03022068 2003-08-12

Publications (2)

Publication Number Publication Date
CN1836338A CN1836338A (zh) 2006-09-20
CN100499174C true CN100499174C (zh) 2009-06-10

Family

ID=27800883

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800231532A Expired - Fee Related CN100499174C (zh) 2003-08-12 2004-08-09 金属带产品

Country Status (7)

Country Link
US (1) US7989077B2 (enExample)
EP (1) EP1665390A1 (enExample)
JP (1) JP2007502536A (enExample)
KR (1) KR101077046B1 (enExample)
CN (1) CN100499174C (enExample)
SE (1) SE525704C2 (enExample)
WO (1) WO2005015645A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022151857A1 (zh) 2021-01-12 2022-07-21 宝山钢铁股份有限公司 一种适用于内联式薄膜光伏组件的涂镀钢板及其制造方法

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE527179C2 (sv) 2003-12-05 2006-01-17 Sandvik Intellectual Property Tunnfilmssolcell eller tunnfilmsbatteri, innefattande en zirkoniumoxidbelagd bandprodukt av ferritiskt kromstål
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
KR20070064345A (ko) * 2004-09-18 2007-06-20 나노솔라, 인크. 포일 기판 상의 태양 전지의 형성
WO2006047207A2 (en) 2004-10-21 2006-05-04 University Of Delaware Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates
CN101438417B (zh) * 2006-03-14 2011-04-06 科鲁斯技术有限公司 包含金属衬底的基于黄铜矿半导体的光伏太阳能电池、用于光伏太阳能电池的被涂敷的金属衬底及其制造方法
US8101858B2 (en) * 2006-03-14 2012-01-24 Corus Technology B.V. Chalcopyrite semiconductor based photovoltaic solar cell comprising a metal substrate, coated metal substrate for a photovoltaic solar cell and manufacturing method thereof
EP2176887A2 (en) * 2007-03-30 2010-04-21 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
DE102007042616A1 (de) * 2007-09-07 2009-03-12 Emitec Gesellschaft Für Emissionstechnologie Mbh Metallische Folie zur Herstellung von Wabenkörpern und daraus hergestellter Wabenkörper
JP4974986B2 (ja) * 2007-09-28 2012-07-11 富士フイルム株式会社 太陽電池用基板および太陽電池
JP4550928B2 (ja) * 2009-01-16 2010-09-22 富士フイルム株式会社 光電変換素子、及びこれを用いた太陽電池
JP4629151B2 (ja) * 2009-03-10 2011-02-09 富士フイルム株式会社 光電変換素子及び太陽電池、光電変換素子の製造方法
CN101840939A (zh) 2009-03-11 2010-09-22 富士胶片株式会社 铝合金基板和太阳能电池基板
DE102009013903A1 (de) * 2009-03-19 2010-09-23 Clariant International Limited Solarzellen mit einer Barriereschicht auf Basis von Polysilazan
JP2010263037A (ja) 2009-05-01 2010-11-18 Fujifilm Corp 金属複合基板およびその製造方法
EP2463395B1 (en) 2009-08-06 2019-10-30 Nippon Steel Corporation Steel sheet for radiation heating, method of manufacturing the same, and steel processed product having portion with different strength and method of manufacturing the same
KR101306913B1 (ko) * 2009-09-02 2013-09-10 한국전자통신연구원 태양 전지
CN101673777B (zh) * 2009-10-13 2011-04-27 华东师范大学 一种柔性铜铟镓硒薄膜太阳能电池
CN102074615B (zh) * 2009-11-20 2012-10-03 正峰新能源股份有限公司 太阳能电池吸收层的非真空涂布方法
JP4700130B1 (ja) * 2010-02-01 2011-06-15 富士フイルム株式会社 絶縁性金属基板および半導体装置
JP5970796B2 (ja) * 2010-12-10 2016-08-17 Ｊｆｅスチール株式会社 太陽電池基板用鋼箔およびその製造方法、並びに太陽電池基板、太陽電池およびその製造方法
JP2012151385A (ja) * 2011-01-21 2012-08-09 Nisshin Steel Co Ltd Ｃｉｓ太陽電池用電極基板および電池
JP5727402B2 (ja) 2011-04-05 2015-06-03 富士フイルム株式会社 絶縁層付金属基板およびその製造方法並びに半導体装置
EP2720276A4 (en) * 2011-06-10 2014-12-24 Posco SOLAR CELL SUBSTRATE, MANUFACTURING METHOD AND SOLAR CELL THEREFOR
KR101374690B1 (ko) 2011-11-16 2014-03-31 한국생산기술연구원 Ｃｉｇｓ 태양전지용 철-니켈 합금 금속 포일 기판재
US8916954B2 (en) 2012-02-05 2014-12-23 Gtat Corporation Multi-layer metal support
US20130200497A1 (en) * 2012-02-05 2013-08-08 Twin Creeks Technologies, Inc. Multi-layer metal support
US8841161B2 (en) 2012-02-05 2014-09-23 GTAT.Corporation Method for forming flexible solar cells
CN103258896A (zh) * 2012-02-17 2013-08-21 任丘市永基光电太阳能有限公司 柔性cigs薄膜太阳电池吸收层制备工艺
CN103296130A (zh) * 2012-03-05 2013-09-11 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上CIGS吸收层的Na掺杂方法
CH706216A1 (de) * 2012-03-12 2013-09-13 Von Roll Solar Ag Substrat für elektrische oder elektronische Bauteile.
KR101315311B1 (ko) * 2012-07-13 2013-10-04 한국에너지기술연구원 후면전극 및 이를 포함하는 ｃｉｓ계 태양전지
US8785294B2 (en) 2012-07-26 2014-07-22 Gtat Corporation Silicon carbide lamina
JP2014203936A (ja) 2013-04-03 2014-10-27 昭和シェル石油株式会社 薄膜太陽電池
KR101482391B1 (ko) * 2013-04-17 2015-01-14 주식회사 포스코 박막형 태양전지용 기판의 제조방법
KR101428419B1 (ko) * 2013-08-30 2014-08-08 주식회사 포스코 절연특성이 우수한 태양전지용 기판 및 그 제조방법
KR101510542B1 (ko) * 2013-10-18 2015-04-08 주식회사 포스코 평탄화 특성 및 절연특성이 우수한 태양전지용 기판 및 그 제조방법
CN105097980B (zh) * 2014-05-14 2018-08-03 香港中文大学 薄膜太阳能电池及其制造方法
KR102462688B1 (ko) * 2020-07-17 2022-11-04 한국전력공사 유연 태양전지 및 이의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6040521A (en) * 1996-11-08 2000-03-21 Showa Shell Sekiyu K.K. N-type window layer for a thin film solar cell and method of making
US6258620B1 (en) * 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173873A (ja) * 1982-04-05 1983-10-12 Hitachi Ltd 非晶質シリコン太陽電池およびその製造方法
CA1308778C (en) * 1988-07-01 1992-10-13 Nobuhiro Furukawa Non-aqueous electrolyte cell
JP3019326B2 (ja) * 1989-06-30 2000-03-13 松下電器産業株式会社 リチウム二次電池
JPH04234177A (ja) * 1990-12-28 1992-08-21 Sanyo Electric Co Ltd 光起電力装置
SE508676C2 (sv) * 1994-10-21 1998-10-26 Nordic Solar Energy Ab Förfarande för framställning av tunnfilmssolceller
JPH11261090A (ja) * 1998-03-09 1999-09-24 Nisshin Steel Co Ltd 太陽電池用基板及びその製造方法
JP4865119B2 (ja) * 1999-12-24 2012-02-01 日新製鋼株式会社 耐熱性に優れた太陽電池用絶縁基板及びその製造方法
JP3503824B2 (ja) * 2000-03-23 2004-03-08 松下電器産業株式会社 太陽電池およびその製造方法
DE10024882A1 (de) 2000-05-19 2001-11-29 Zsw Verfahren zur Herstellung einer photoelektrisch aktiven Verbindungshalbleiterschicht mit Alkalimetall-Dotieranteil

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6040521A (en) * 1996-11-08 2000-03-21 Showa Shell Sekiyu K.K. N-type window layer for a thin film solar cell and method of making
US6258620B1 (en) * 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Dielectric barriers for flexible CIGS solar modules. K.Herz , F.Kessler , R.Wachter , M.Powalla , J.Schneider,A.Schulz , U.Schumacher.Thin Solid Films,Vol.403-404 . 2002 *
The effect of NaF on Cu(In, Ga)Se2 thin film solar cells. Karin Granath, Marika Bodegard, Lars Stolt.Solar Energy Materials & Solar Cells,Vol.60 No.3. 2000 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022151857A1 (zh) 2021-01-12 2022-07-21 宝山钢铁股份有限公司 一种适用于内联式薄膜光伏组件的涂镀钢板及其制造方法

Also Published As

Publication number Publication date
CN1836338A (zh) 2006-09-20
SE0302206L (sv) 2005-02-13
SE525704C2 (sv) 2005-04-05
US20080257404A1 (en) 2008-10-23
US7989077B2 (en) 2011-08-02
WO2005015645A1 (en) 2005-02-17
JP2007502536A (ja) 2007-02-08
KR101077046B1 (ko) 2011-10-26
EP1665390A1 (en) 2006-06-07
KR20060115990A (ko) 2006-11-13
SE0302206D0 (sv) 2003-08-12

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