SE525704C2 - Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller - Google Patents
Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetallerInfo
- Publication number
- SE525704C2 SE525704C2 SE0302206A SE0302206A SE525704C2 SE 525704 C2 SE525704 C2 SE 525704C2 SE 0302206 A SE0302206 A SE 0302206A SE 0302206 A SE0302206 A SE 0302206A SE 525704 C2 SE525704 C2 SE 525704C2
- Authority
- SE
- Sweden
- Prior art keywords
- coated steel
- steel product
- product according
- layer
- metal
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 19
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 18
- 239000010959 steel Substances 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 title claims description 33
- 239000002184 metal Substances 0.000 title claims description 33
- 229910052783 alkali metal Inorganic materials 0.000 title claims description 16
- 150000001340 alkali metals Chemical class 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 33
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 18
- 239000011733 molybdenum Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 238000005566 electron beam evaporation Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 7
- 238000010292 electrical insulation Methods 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910004140 HfO Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 abstract description 20
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 11
- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 72
- 238000000151 deposition Methods 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000011148 porous material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000010923 batch production Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 alumina Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000013351 cheese Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009628 steelmaking Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
- H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Laminated Bodies (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0302206A SE525704C2 (sv) | 2003-08-12 | 2003-08-12 | Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller |
| CNB2004800231532A CN100499174C (zh) | 2003-08-12 | 2004-08-09 | 金属带产品 |
| US10/567,122 US7989077B2 (en) | 2003-08-12 | 2004-08-09 | Metal strip product |
| JP2006523160A JP2007502536A (ja) | 2003-08-12 | 2004-08-09 | 新規な金属ストリップ |
| PCT/SE2004/001173 WO2005015645A1 (en) | 2003-08-12 | 2004-08-09 | New metal strip product |
| EP04775296A EP1665390A1 (en) | 2003-08-12 | 2004-08-09 | New metal strip product |
| KR1020067002893A KR101077046B1 (ko) | 2003-08-12 | 2004-08-09 | 신규한 금속 스트립 제품 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0302206A SE525704C2 (sv) | 2003-08-12 | 2003-08-12 | Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE0302206D0 SE0302206D0 (sv) | 2003-08-12 |
| SE0302206L SE0302206L (sv) | 2005-02-13 |
| SE525704C2 true SE525704C2 (sv) | 2005-04-05 |
Family
ID=27800883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0302206A SE525704C2 (sv) | 2003-08-12 | 2003-08-12 | Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7989077B2 (enExample) |
| EP (1) | EP1665390A1 (enExample) |
| JP (1) | JP2007502536A (enExample) |
| KR (1) | KR101077046B1 (enExample) |
| CN (1) | CN100499174C (enExample) |
| SE (1) | SE525704C2 (enExample) |
| WO (1) | WO2005015645A1 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE527179C2 (sv) | 2003-12-05 | 2006-01-17 | Sandvik Intellectual Property | Tunnfilmssolcell eller tunnfilmsbatteri, innefattande en zirkoniumoxidbelagd bandprodukt av ferritiskt kromstål |
| US20060060237A1 (en) * | 2004-09-18 | 2006-03-23 | Nanosolar, Inc. | Formation of solar cells on foil substrates |
| KR20070064345A (ko) * | 2004-09-18 | 2007-06-20 | 나노솔라, 인크. | 포일 기판 상의 태양 전지의 형성 |
| WO2006047207A2 (en) | 2004-10-21 | 2006-05-04 | University Of Delaware | Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates |
| CN101438417B (zh) * | 2006-03-14 | 2011-04-06 | 科鲁斯技术有限公司 | 包含金属衬底的基于黄铜矿半导体的光伏太阳能电池、用于光伏太阳能电池的被涂敷的金属衬底及其制造方法 |
| US8101858B2 (en) * | 2006-03-14 | 2012-01-24 | Corus Technology B.V. | Chalcopyrite semiconductor based photovoltaic solar cell comprising a metal substrate, coated metal substrate for a photovoltaic solar cell and manufacturing method thereof |
| EP2176887A2 (en) * | 2007-03-30 | 2010-04-21 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
| DE102007042616A1 (de) * | 2007-09-07 | 2009-03-12 | Emitec Gesellschaft Für Emissionstechnologie Mbh | Metallische Folie zur Herstellung von Wabenkörpern und daraus hergestellter Wabenkörper |
| JP4974986B2 (ja) * | 2007-09-28 | 2012-07-11 | 富士フイルム株式会社 | 太陽電池用基板および太陽電池 |
| JP4550928B2 (ja) * | 2009-01-16 | 2010-09-22 | 富士フイルム株式会社 | 光電変換素子、及びこれを用いた太陽電池 |
| JP4629151B2 (ja) * | 2009-03-10 | 2011-02-09 | 富士フイルム株式会社 | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
| CN101840939A (zh) | 2009-03-11 | 2010-09-22 | 富士胶片株式会社 | 铝合金基板和太阳能电池基板 |
| DE102009013903A1 (de) * | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solarzellen mit einer Barriereschicht auf Basis von Polysilazan |
| JP2010263037A (ja) | 2009-05-01 | 2010-11-18 | Fujifilm Corp | 金属複合基板およびその製造方法 |
| EP2463395B1 (en) | 2009-08-06 | 2019-10-30 | Nippon Steel Corporation | Steel sheet for radiation heating, method of manufacturing the same, and steel processed product having portion with different strength and method of manufacturing the same |
| KR101306913B1 (ko) * | 2009-09-02 | 2013-09-10 | 한국전자통신연구원 | 태양 전지 |
| CN101673777B (zh) * | 2009-10-13 | 2011-04-27 | 华东师范大学 | 一种柔性铜铟镓硒薄膜太阳能电池 |
| CN102074615B (zh) * | 2009-11-20 | 2012-10-03 | 正峰新能源股份有限公司 | 太阳能电池吸收层的非真空涂布方法 |
| JP4700130B1 (ja) * | 2010-02-01 | 2011-06-15 | 富士フイルム株式会社 | 絶縁性金属基板および半導体装置 |
| JP5970796B2 (ja) * | 2010-12-10 | 2016-08-17 | Ｊｆｅスチール株式会社 | 太陽電池基板用鋼箔およびその製造方法、並びに太陽電池基板、太陽電池およびその製造方法 |
| JP2012151385A (ja) * | 2011-01-21 | 2012-08-09 | Nisshin Steel Co Ltd | Ｃｉｓ太陽電池用電極基板および電池 |
| JP5727402B2 (ja) | 2011-04-05 | 2015-06-03 | 富士フイルム株式会社 | 絶縁層付金属基板およびその製造方法並びに半導体装置 |
| EP2720276A4 (en) * | 2011-06-10 | 2014-12-24 | Posco | SOLAR CELL SUBSTRATE, MANUFACTURING METHOD AND SOLAR CELL THEREFOR |
| KR101374690B1 (ko) | 2011-11-16 | 2014-03-31 | 한국생산기술연구원 | Ｃｉｇｓ 태양전지용 철-니켈 합금 금속 포일 기판재 |
| US8916954B2 (en) | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
| US20130200497A1 (en) * | 2012-02-05 | 2013-08-08 | Twin Creeks Technologies, Inc. | Multi-layer metal support |
| US8841161B2 (en) | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
| CN103258896A (zh) * | 2012-02-17 | 2013-08-21 | 任丘市永基光电太阳能有限公司 | 柔性cigs薄膜太阳电池吸收层制备工艺 |
| CN103296130A (zh) * | 2012-03-05 | 2013-09-11 | 任丘市永基光电太阳能有限公司 | 一种柔性不锈钢衬底上CIGS吸收层的Na掺杂方法 |
| CH706216A1 (de) * | 2012-03-12 | 2013-09-13 | Von Roll Solar Ag | Substrat für elektrische oder elektronische Bauteile. |
| KR101315311B1 (ko) * | 2012-07-13 | 2013-10-04 | 한국에너지기술연구원 | 후면전극 및 이를 포함하는 ｃｉｓ계 태양전지 |
| US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
| JP2014203936A (ja) | 2013-04-03 | 2014-10-27 | 昭和シェル石油株式会社 | 薄膜太陽電池 |
| KR101482391B1 (ko) * | 2013-04-17 | 2015-01-14 | 주식회사 포스코 | 박막형 태양전지용 기판의 제조방법 |
| KR101428419B1 (ko) * | 2013-08-30 | 2014-08-08 | 주식회사 포스코 | 절연특성이 우수한 태양전지용 기판 및 그 제조방법 |
| KR101510542B1 (ko) * | 2013-10-18 | 2015-04-08 | 주식회사 포스코 | 평탄화 특성 및 절연특성이 우수한 태양전지용 기판 및 그 제조방법 |
| CN105097980B (zh) * | 2014-05-14 | 2018-08-03 | 香港中文大学 | 薄膜太阳能电池及其制造方法 |
| KR102462688B1 (ko) * | 2020-07-17 | 2022-11-04 | 한국전력공사 | 유연 태양전지 및 이의 제조 방법 |
| CN114759106B (zh) | 2021-01-12 | 2024-03-08 | 宝山钢铁股份有限公司 | 一种适用于内联式薄膜光伏组件的涂镀钢板及其制造方法 |
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| CA1308778C (en) * | 1988-07-01 | 1992-10-13 | Nobuhiro Furukawa | Non-aqueous electrolyte cell |
| JP3019326B2 (ja) * | 1989-06-30 | 2000-03-13 | 松下電器産業株式会社 | リチウム二次電池 |
| JPH04234177A (ja) * | 1990-12-28 | 1992-08-21 | Sanyo Electric Co Ltd | 光起電力装置 |
| SE508676C2 (sv) * | 1994-10-21 | 1998-10-26 | Nordic Solar Energy Ab | Förfarande för framställning av tunnfilmssolceller |
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| US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
| JPH11261090A (ja) * | 1998-03-09 | 1999-09-24 | Nisshin Steel Co Ltd | 太陽電池用基板及びその製造方法 |
| JP4865119B2 (ja) * | 1999-12-24 | 2012-02-01 | 日新製鋼株式会社 | 耐熱性に優れた太陽電池用絶縁基板及びその製造方法 |
| JP3503824B2 (ja) * | 2000-03-23 | 2004-03-08 | 松下電器産業株式会社 | 太陽電池およびその製造方法 |
| DE10024882A1 (de) | 2000-05-19 | 2001-11-29 | Zsw | Verfahren zur Herstellung einer photoelektrisch aktiven Verbindungshalbleiterschicht mit Alkalimetall-Dotieranteil |
| WO2003007386A1 (en) * | 2001-07-13 | 2003-01-23 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
-
2003
- 2003-08-12 SE SE0302206A patent/SE525704C2/sv not_active IP Right Cessation
-
2004
- 2004-08-09 WO PCT/SE2004/001173 patent/WO2005015645A1/en not_active Ceased
- 2004-08-09 KR KR1020067002893A patent/KR101077046B1/ko not_active Expired - Fee Related
- 2004-08-09 CN CNB2004800231532A patent/CN100499174C/zh not_active Expired - Fee Related
- 2004-08-09 US US10/567,122 patent/US7989077B2/en not_active Expired - Fee Related
- 2004-08-09 JP JP2006523160A patent/JP2007502536A/ja active Pending
- 2004-08-09 EP EP04775296A patent/EP1665390A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CN1836338A (zh) | 2006-09-20 |
| SE0302206L (sv) | 2005-02-13 |
| US20080257404A1 (en) | 2008-10-23 |
| US7989077B2 (en) | 2011-08-02 |
| WO2005015645A1 (en) | 2005-02-17 |
| JP2007502536A (ja) | 2007-02-08 |
| KR101077046B1 (ko) | 2011-10-26 |
| CN100499174C (zh) | 2009-06-10 |
| EP1665390A1 (en) | 2006-06-07 |
| KR20060115990A (ko) | 2006-11-13 |
| SE0302206D0 (sv) | 2003-08-12 |
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