JP2007328210A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2007328210A JP2007328210A JP2006160428A JP2006160428A JP2007328210A JP 2007328210 A JP2007328210 A JP 2007328210A JP 2006160428 A JP2006160428 A JP 2006160428A JP 2006160428 A JP2006160428 A JP 2006160428A JP 2007328210 A JP2007328210 A JP 2007328210A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 61
- 239000010408 film Substances 0.000 claims abstract description 324
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 80
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 238000001312 dry etching Methods 0.000 claims abstract description 6
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- 239000003990 capacitor Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 14
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- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
【解決手段】映像信号線と、画素電極と、第1の電極が前記映像信号線に接続され第2の電極が薄膜トランジスタと、第1のシリコン窒化膜と、有機絶縁膜と、前記有機絶縁膜よりも上層に形成された容量電極と、前記容量電極よりも上層で前記画素電極よりも下層に形成された第2のシリコン窒化膜とを有し、前記第2のシリコン窒化膜は、前記第1のシリコン窒化膜の成膜温度よりも低温で成膜された膜であり、前記第1のシリコン窒化膜と前記第2のシリコン窒化膜は、両者を一括でドライエッチして形成したコンタクトホールを有し、前記コンタクトホールを介して前記第2の電極と前記画素電極とが接続されており、前記容量電極には、前記画素電極とは異なる電位が印加されており、前記画素電極と前記第2のシリコン窒化膜と前記容量電極とによって保持容量を構成している。
【選択図】図1
Description
前記第1の基板は、映像信号線と、画素電極と、第1の電極が前記映像信号線に接続され第2の電極が前記画素電極と接続された薄膜トランジスタと、前記第2の電極よりも上層に形成された第1のシリコン窒化膜と、前記第1のシリコン窒化膜よりも上層に形成された有機絶縁膜と、前記有機絶縁膜よりも上層に形成された容量電極と、前記容量電極よりも上層で前記画素電極よりも下層に形成された第2のシリコン窒化膜とを有し、
前記第2のシリコン窒化膜は、前記第1のシリコン窒化膜の成膜温度よりも低温で成膜された膜であり、
前記第1のシリコン窒化膜と前記第2のシリコン窒化膜は、両者を一括でドライエッチして形成したコンタクトホールを有し、
前記コンタクトホールを介して前記第2の電極と前記画素電極とが接続されており、
前記容量電極には、前記画素電極とは異なる電位が印加されており、前記画素電極と前記第2のシリコン窒化膜と前記容量電極とによって保持容量を構成している。
前記反射膜は、前記有機絶縁膜の前記凹凸を反映した凹凸を有する構成としても良い。
前記第1の基板は、映像信号線と、画素電極と、第1の電極が前記映像信号線に接続され第2の電極が前記画素電極と接続された薄膜トランジスタと、前記第2の電極よりも上層に形成された有機絶縁膜と、前記有機絶縁膜よりも上層に形成された容量電極と、前記容量電極よりも上層で前記画素電極よりも下層に形成されたシリコン窒化膜とを有し、
前記シリコン窒化膜は、前記有機絶縁膜の形成より後に前記有機絶縁膜の耐熱温度以下で成膜された膜であり、
前記容量電極には、前記画素電極とは異なる電位が印加されており、前記画素電極と前記シリコン窒化膜と前記容量電極とによって保持容量を構成している。
前記第1の基板は、映像信号線と、画素電極と、第1の電極が前記映像信号線に接続され第2の電極が前記画素電極と接続された薄膜トランジスタと、前記薄膜トランジスタよりも上層に形成された有機絶縁膜と、前記有機絶縁膜よりも上層に形成された反射膜と、前記反射膜よりも上層で前記画素電極よりも下層に形成されたシリコン窒化膜とを有し、
前記有機絶縁膜は、前記反射膜に対応する箇所に凹凸を有し、
前記反射膜は、前記有機絶縁膜の前記凹凸を反映した凹凸を有し、
前記シリコン窒化膜は、前記有機絶縁膜の形成より後に前記有機絶縁膜の耐熱温度以下で成膜された膜であり、
前記有機絶縁膜の前記凹凸は、山と谷との間の高さが0.3μm以下である。
Claims (22)
- 第1の基板と、前記第1の基板に対向して配置される第2の基板と、前記第1の基板と前記第2の基板との間に挟持される液晶とを有する液晶表示装置であって、
前記第1の基板は、映像信号線と、画素電極と、第1の電極が前記映像信号線に接続され第2の電極が前記画素電極と接続された薄膜トランジスタと、前記第2の電極よりも上層に形成された第1のシリコン窒化膜と、前記第1のシリコン窒化膜よりも上層に形成された有機絶縁膜と、前記有機絶縁膜よりも上層に形成された容量電極と、前記容量電極よりも上層で前記画素電極よりも下層に形成された第2のシリコン窒化膜とを有し、
前記第2のシリコン窒化膜は、前記第1のシリコン窒化膜の成膜温度よりも低温で成膜された膜であり、
前記第1のシリコン窒化膜と前記第2のシリコン窒化膜は、両者を一括でドライエッチして形成したコンタクトホールを有し、
前記コンタクトホールを介して前記第2の電極と前記画素電極とが接続されており、
前記容量電極には、前記画素電極とは異なる電位が印加されており、前記画素電極と前記第2のシリコン窒化膜と前記容量電極とによって保持容量を構成していることを特徴とする液晶表示装置。 - 前記容量電極は、少なくとも一部に反射膜を有することを特徴とする請求項1に記載の液晶表示装置。
- 前記第2の電極は、前記反射膜をパターニングする際に用いるエッチング液またはエッチングガスによってエッチングされる材料を有していることを特徴とする請求項2に記載の液晶表示装置。
- 前記第2の電極は、前記反射膜と同じ材料を有していることを特徴とする請求項2または3に記載の液晶表示装置。
- 前記有機絶縁膜は、前記反射膜に対応する箇所に凹凸を有し、
前記反射膜は、前記有機絶縁膜の前記凹凸を反映した凹凸を有することを特徴とする請求項2から4の何れかに記載の液晶表示装置。 - 前記有機絶縁膜の前記凹凸は、山と谷との間の高さが0.3μm以下であることを特徴とする請求項5に記載の液晶表示装置。
- 前記コンタクトホールにおいて、前記第2のシリコン窒化膜の下面が、前記第1のシリコン窒化膜の上面と、少なくとも一箇所で接触していることを特徴とする請求項1から6の何れかに記載の液晶表示装置。
- 前記コンタクトホールにおいて、前記第2のシリコン窒化膜の下面が、前記第1のシリコン窒化膜の上面と、全周にわたって接触していることを特徴とする請求項1から7の何れかに記載の液晶表示装置。
- 前記コンタクトホールにおいて、前記第2のシリコン窒化膜の下面の端部が、前記第1のシリコン窒化膜の上面の端部と、ほぼ一致していることを特徴とする請求項1から8の何れかに記載の液晶表示装置。
- 前記コンタクトホールにおいて、前記第2のシリコン窒化膜の下面の端部が、前記第1のシリコン窒化膜の上面の端部よりも、後退していることを特徴とする請求項1から8の何れかに記載の液晶表示装置。
- 前記コンタクトホールにおいて、前記有機絶縁膜が、前記第2のシリコン窒化膜から露出していないことを特徴とする請求項1から10の何れかに記載の液晶表示装置。
- 前記容量電極は、少なくとも一部に透明導電膜を有することを特徴とする請求項1から11の何れかに記載の液晶表示装置。
- 前記画素電極は、透明導電膜を有することを特徴とする請求項1から12の何れかに記載の液晶表示装置。
- 前記第2のシリコン窒化膜は、表面近傍が、それ以外の部分よりもエッチレートが速い膜であることを特徴とする請求項1から13の何れかに記載の液晶表示装置。
- 前記第2のシリコン窒化膜の前記表面近傍の前記エッチレートがそれ以外の部分よりも速い部分の膜厚は、前記第2のシリコン窒化膜の膜厚の5%以上、30%以下であることを特徴とする請求項14に記載の液晶表示装置。
- 前記第2のシリコン窒化膜は、プラズマCVD法により成膜されていることを特徴とする請求項1から15の何れかに記載の液晶表示装置。
- 前記容量電極は、対向電極の役割を兼ね、前記画素電極と前記対向電極との間に発生する電界により前記液晶を駆動することを特徴とする請求項1から16の何れかに記載の液晶表示装置。
- 前記第2の基板は、対向電極を有し、前記画素電極と前記対向電極との間に発生する電界により前記液晶を駆動することを特徴とする請求項1から16の何れかに記載の液晶表示装置。
- 第1の基板と、前記第1の基板に対向して配置される第2の基板と、前記第1の基板と前記第2の基板との間に挟持される液晶とを有する液晶表示装置であって、
前記第1の基板は、映像信号線と、画素電極と、第1の電極が前記映像信号線に接続され第2の電極が前記画素電極と接続された薄膜トランジスタと、前記第2の電極よりも上層に形成された有機絶縁膜と、前記有機絶縁膜よりも上層に形成された容量電極と、前記容量電極よりも上層で前記画素電極よりも下層に形成されたシリコン窒化膜とを有し、
前記シリコン窒化膜は、前記有機絶縁膜の形成より後に前記有機絶縁膜の耐熱温度以下で成膜された膜であり、
前記容量電極には、前記画素電極とは異なる電位が印加されており、前記画素電極と前記シリコン窒化膜と前記容量電極とによって保持容量を構成していることを特徴とする液晶表示装置。 - 前記シリコン窒化膜は、プラズマCVD法により成膜されていることを特徴とする請求項19に記載の液晶表示装置。
- 第1の基板と、前記第1の基板に対向して配置される第2の基板と、前記第1の基板と前記第2の基板との間に挟持される液晶とを有する液晶表示装置であって、
前記第1の基板は、映像信号線と、画素電極と、第1の電極が前記映像信号線に接続され第2の電極が前記画素電極と接続された薄膜トランジスタと、前記薄膜トランジスタよりも上層に形成された有機絶縁膜と、前記有機絶縁膜よりも上層に形成された反射膜と、 前記反射膜よりも上層で前記画素電極よりも下層に形成されたシリコン窒化膜とを有し、
前記有機絶縁膜は、前記反射膜に対応する箇所に凹凸を有し、
前記反射膜は、前記有機絶縁膜の前記凹凸を反映した凹凸を有し、
前記シリコン窒化膜は、前記有機絶縁膜の形成より後に前記有機絶縁膜の耐熱温度以下で成膜された膜であり、
前記有機絶縁膜の前記凹凸は、山と谷との間の高さが0.3μm以下であることを特徴とする液晶表示装置。 - 前記シリコン窒化膜は、プラズマCVD法により成膜されていることを特徴とする請求項21に記載の液晶表示装置。
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US10133103B2 (en) | 2018-11-20 |
US8735901B2 (en) | 2014-05-27 |
US20140132902A1 (en) | 2014-05-15 |
US20100227425A1 (en) | 2010-09-09 |
US20190049775A1 (en) | 2019-02-14 |
US8513701B2 (en) | 2013-08-20 |
US20150212364A1 (en) | 2015-07-30 |
US9274364B2 (en) | 2016-03-01 |
US20200150484A1 (en) | 2020-05-14 |
US20110227083A1 (en) | 2011-09-22 |
US7968357B2 (en) | 2011-06-28 |
US20120299028A1 (en) | 2012-11-29 |
US8377765B2 (en) | 2013-02-19 |
US10564459B2 (en) | 2020-02-18 |
US11536999B2 (en) | 2022-12-27 |
US20210181569A1 (en) | 2021-06-17 |
US9025103B2 (en) | 2015-05-05 |
US9766489B2 (en) | 2017-09-19 |
US7742113B2 (en) | 2010-06-22 |
JP5170985B2 (ja) | 2013-03-27 |
US20130308072A1 (en) | 2013-11-21 |
US10962815B2 (en) | 2021-03-30 |
US20160147110A1 (en) | 2016-05-26 |
US20070298538A1 (en) | 2007-12-27 |
US20170343851A1 (en) | 2017-11-30 |
US20230036779A1 (en) | 2023-02-02 |
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