CN110400810B - 显示基板及其制作方法、和显示装置 - Google Patents
显示基板及其制作方法、和显示装置 Download PDFInfo
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- CN110400810B CN110400810B CN201910707578.3A CN201910707578A CN110400810B CN 110400810 B CN110400810 B CN 110400810B CN 201910707578 A CN201910707578 A CN 201910707578A CN 110400810 B CN110400810 B CN 110400810B
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Abstract
本发明提供一种显示基板及其制作方法、和显示装置,其中,显示基板的制作方法,包括:在衬底基板上依次形成薄膜晶体管阵列层;形成覆盖薄膜晶体管阵列层的平坦层;在平坦层上形成过渡层,过渡层与光刻胶之间的粘附度小于平坦层与光刻胶之间的粘附度;在过渡层上形成光刻胶,对光刻胶进行曝光,显影后形成第一光刻胶图形;以第一光刻胶图形为掩膜,对过渡层进行刻蚀,形成贯穿过渡层的第一过孔;以第一光刻胶图形为掩膜,通过第一过孔对平坦层进行刻蚀,形成贯穿平坦层的第二过孔,第一过孔和第二过孔在衬底基板上的正投影重合。本发明提供的显示基板及其制作方法、和显示装置,能够提高显示装置的显示效果。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种显示基板及其制作方法、和显示装置。
背景技术
在显示基板中,由于金属走线导致像素之间凹凸不平,从而会产生像素发光均一性差的问题,需要平坦层来进行像素间段差的优化。然而,由于光刻胶在平坦层上涂覆的均匀度较低,通过光刻胶刻蚀后的显示装置在显示时会产生环形的Mura(显示器亮度不均匀,造成各种痕迹的现象),降低显示装置的显示效果。
发明内容
本发明实施例提供一种显示基板及其制作方法、和显示装置,以解决相关技术中由于光刻胶在平坦层上涂覆的均匀度较低,降低了显示装置的显示效果的问题。
为了解决上述技术问题,本发明提供技术方案如下:
第一方面,本发明实施例提供一种显示基板的制作方法,包括:
在衬底基板上形成薄膜晶体管阵列层;
形成覆盖所述薄膜晶体管阵列层的平坦层;
在所述平坦层上形成过渡层,所述过渡层与光刻胶之间的粘附度小于所述平坦层与光刻胶之间的粘附度;
在所述过渡层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第一光刻胶图形;
以所述第一光刻胶图形为掩膜,对所述过渡层进行刻蚀,形成贯穿所述过渡层的第一过孔;
以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行刻蚀,形成贯穿所述平坦层的第二过孔,所述第一过孔和所述第二过孔在所述衬底基板上的正投影重合。
进一步地,所述平坦层为硅-玻璃键合结构SOG材料。
进一步地,所述以所述第一光刻胶图形为掩膜,对所述过渡层进行刻蚀,形成贯穿所述过渡层的第一过孔的步骤,包括:
以所述第一光刻胶图形为掩膜,对所述过渡层进行湿刻,形成贯穿所述过渡层的第一过孔。
进一步地,所述以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行刻蚀,形成贯穿所述平坦层的第二过孔的步骤,包括:
以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行干刻,形成贯穿所述平坦层的第二过孔。
进一步地,所述形成覆盖所述薄膜晶体管阵列层的平坦层的步骤,包括:
形成覆盖所述薄膜晶体管阵列层的绝缘层;
形成覆盖所述绝缘层的平坦层。
进一步地,在形成贯穿所述平坦层的第二过孔的步骤之后,所述方法还包括:
在所述绝缘层和所述过渡层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第二光刻胶图形;
以所述第二光刻胶图形为掩膜,对所述绝缘层进行刻蚀,形成绝缘层图形;
在所述薄膜晶体管阵列层和所述过渡层上形成阳极材料层;
在所述阳极材料层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第三光刻胶图形;
以所述第三光刻胶图形为掩膜,对所述阳极材料层进行刻蚀,形成阳极。
进一步地,在形成阳极的步骤之后,所述方法还包括:
在形成有所述阳极的衬底基板上形成像素界定层图形;
在所述像素界定层图形限定出的区域内形成发光层;
在所述发光层上形成透明的阴极层,所述阴极层在所述衬底基板上的正投影覆盖所述衬底基板。
第二方面,本发明实施例还提供一种显示基板,包括:
衬底基板;
位于所述衬底基板上的薄膜晶体管阵列层;
覆盖所述薄膜晶体管阵列层的平坦层;
位于所述平坦层上的过渡层,所述过渡层与光刻胶之间的粘附度小于所述平坦层与光刻胶之间的粘附度,所述过渡层包括有第一过孔,所述平坦层包括有第二过孔,所述第一过孔和第二过孔在所述衬底基板上的正投影重合。
进一步地,所述薄膜晶体管阵列层内构成的薄膜晶体管为顶栅自对准型薄膜晶体管、刻蚀阻挡层型薄膜晶体管或背面沟道刻蚀型薄膜晶体管。
进一步地,所述显示基板还包括位于所述过渡层背离所述衬底基板一侧的透明的阴极层,所述阴极层由锌元素、铟元素、铝元素、锡元素、镁元素、银元素、钙元素、钐元素和钡元素中的至少一种元素的氧化物制作而成。
第三方面,本发明实施例还提供一种显示面板,包括如上所述的显示基板,所述显示面板为顶发射显示面板或底发射显示面板。
第四方面,本发明实施例还提供一种显示装置,包括如上所述的显示基板。
本发明提供的技术方案中,通过在平坦层上形成过渡层,又由于过渡层与光刻胶之间的粘附度小于平坦层与光刻胶之间的粘附度,这样光刻胶能够相对于平坦层而言更均匀的在过渡层上涂开,从而以光刻胶形成的第一光刻胶图形为掩膜对过渡层和平坦层进行刻蚀,能够减轻甚至消除显示装置显示时出现的Mura现象,从而提高显示装置的显示效果。因此,本发明提供的技术方案能够提高显示装置的显示效果。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对本发明实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1为本发明一实施例提供的显示基板的制作方法的流程图;
图2为本发明一实施例提供的显示基板的制作方法中显示基板在一阶段的剖视图;
图3为本发明一实施例提供的显示基板的制作方法中显示基板在另一阶段的剖视图;
图4为本发明一实施例提供的显示基板的制作方法中显示基板在另一阶段的剖视图;
图5为本发明一实施例提供的显示基板的制作方法中显示基板在另一阶段的剖视图;
图6为本发明一实施例提供的显示基板的制作方法中显示基板在另一阶段的剖视图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
相关技术中由于光刻胶在平坦层上涂覆的均匀度较低,通过光刻胶刻蚀后的显示装置在显示时会产生环形的Mura,降低显示装置的显示效果。
本发明实施例针对上述问题,提供一种显示基板及其制作方法、和显示装置,能够解决相关技术中由于光刻胶在平坦层上涂覆的均匀度较低,显示装置显示时产生Mura,降低了显示装置的显示效果的问题。
本发明实施例提供一种显示基板的制作方法,如图1所示,包括:
步骤101:在衬底基板上依次形成薄膜晶体管阵列层;
步骤102:形成覆盖所述薄膜晶体管阵列层的平坦层;
步骤103:在所述平坦层上形成过渡层,所述过渡层与光刻胶之间的粘附度小于所述平坦层与光刻胶之间的粘附度;
步骤104:在所述过渡层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第一光刻胶图形;
步骤105:以所述第一光刻胶图形为掩膜,对所述过渡层进行刻蚀,形成贯穿所述过渡层的第一过孔;
步骤106:以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行刻蚀,形成贯穿所述平坦层的第二过孔,所述第一过孔和第二过孔在所述衬底基板上的正投影重合。
本发明实施例中,通过在平坦层上形成过渡层,又由于过渡层与光刻胶之间的粘附度小于平坦层与光刻胶之间的粘附度,这样光刻胶能够相对于平坦层而言更均匀的在过渡层上涂开,从而以光刻胶形成的第一光刻胶图形为掩膜对过渡层和平坦层进行刻蚀,能够减轻甚至消除显示装置显示时出现的Mura现象,从而提高显示装置的显示效果。因此,本发明提供的技术方案能够提高显示装置的显示效果。
如图2所示,上述衬底基板210可以是柔性衬底基板,比如聚酰亚胺薄膜;也可以是刚性衬底基板,比如石英基板或玻璃基板。
上述薄膜晶体管阵列层220可以是由多个功能膜层共同形成的,多个功能膜层可以包括有源层221、栅极绝缘层222、栅极223、层间绝缘层224、金属层225等等,多个功能膜层共同形成内部具有薄膜晶体管结构的薄膜晶体管阵列层220。上述薄膜晶体管阵列层220背离衬底基板210的一侧露出薄膜晶体管的源极,即多个功能膜层中的一金属结构。
上述有源层221可以由金属氧化物材料制成,例如铟镓锌氧化物(IGZO)材料。有源层221可以是在形成有源材料层后,通过利用掩膜板湿刻有源材料层形成。
上述栅极绝缘层222可以由氧化硅、氮化硅、氮氧化硅等绝缘材料制成。栅极223可以由钼(Mo)、铝(Al)、钛(Ti)、金(Au)、铜(Cu)、铪(Hf)、钽(Ta)等常用金属制成,也可以由铝钕合金(AlNd)、钼铌合金(MoNb)铜合金等合金材料制成。栅极绝缘层222和栅极223可以是在依次形成栅极绝缘材料层和栅极层之后,利用同一掩膜板先湿刻栅极层得到栅极223,再干刻栅极绝缘材料层得到栅极绝缘层222。
层间绝缘层224可以为有机绝缘材料也可以为无机绝缘材料。可以通过光刻形成贯穿层间绝缘层224的两个过孔,在这两个过孔处分别沉积金属层,并对金属层进行图形化刻蚀,分别得到源极和漏极。
其中,在薄膜晶体管阵列层220与衬底基板210之间还可以增加一层遮光图形230,有源层221在衬底基板210的正投影落入该遮光图形230在衬底基板210的正投影内,用于遮挡外界射向有源层221的光,起到保护有源层221的作用。遮光图形230可以由金属材料制成,金属材料可以为钼(Mo)、铝(Al)、钛(Ti)、金(Au)、铜(Cu)、铪(Hf)、钽(Ta)等常用金属,也可以为铝钕合金(AlNd)、钼铌合金(MoNb)等合金材料。
另外,还可以在有源层210和遮光图形230之间形成缓冲层(Buffer)240。缓冲层240可以为氧化硅、氮化硅、氮氧化硅等绝缘材料。
上述平坦层260在具有绝缘性能的情况下可以直接形成于薄膜晶体阵列层220上,用于提供平坦面,使得后续设置于平坦层上的像素之间的段差处于较小的范围内,提升像素间的平坦程度,以便于提高显示效果。平坦层260可以为有机树脂、采用硅-玻璃键合结构(Silicon On Glass,简称SOG)材料等等,其中,SOG材料能够使像素间的段差从1.1um降至0.026um,大大提升了像素间的平坦程度,SOG材料是指通过机械或化学方法将硅(单晶、多晶、多孔)与玻璃进行粘合后形成的层合材料。
本发明实施例中,通过在平坦层260上形成过渡层270,光刻胶可以是以涂覆的方式形成于过渡层270上。过渡层270与光刻胶之间的粘附度小于平坦层260与光刻胶之间的粘附度,这样过渡层270上涂覆的光刻胶比在平坦层260上涂覆的更均匀,将对过渡层270上的光刻胶进行曝光、显影后形成的第一光刻胶图形作为掩膜,来对过渡层260和平坦层260进行刻蚀,得到贯穿过渡层260的第一过孔和贯穿平坦层270的第二过孔,如图3所示。
这种方式能够减轻甚至消除显示装置在显示时出现Mura的效果,并且未额外增加掩膜板的数量,也不会对显示基板的其他膜层产生任何影响。
其中,过渡层270可以为导电材料,例如:过渡层270可以由钼(Mo)、铝(Al)等金属材料制成,也可以由铟锡氧化物(ITO)、铟锌氧化物(IZO)等金属氧化物材料制成。过渡层270可以通过溅镀(Sputter)设备在平坦层260上溅射沉积得到。
进一步地,所述以所述第一光刻胶图形为掩膜,对所述过渡层进行刻蚀,形成贯穿所述过渡层的第一过孔的步骤,包括:
以所述第一光刻胶图形为掩膜,对所述过渡层进行湿刻,形成贯穿所述过渡层的第一过孔。
本实施例中,过渡层270可以用于提高其上的光刻胶的均匀性,对显示装置的显示没有影响,通过湿刻过渡层能够降低显示基板的制作成本。
进一步地,所述以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行刻蚀,形成贯穿所述平坦层的第二过孔的步骤,包括:
以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行干刻,形成贯穿所述平坦层的第二过孔。
像素之间的段差取决于平坦层260,通过干刻工艺进行刻蚀,能够确保平坦层270的图形质量,进而确保像素之间的段差处于较小的范围内,确保显示装置的显示效果。
进一步地,所述形成覆盖所述薄膜晶体管阵列层的平坦层的步骤,包括:
形成覆盖所述薄膜晶体管阵列层的绝缘层;
形成覆盖所述绝缘层的平坦层。
本实施例中,上述绝缘层250覆盖薄膜晶体阵列层220背离衬底基板210一侧的表面,即覆盖薄膜晶体管的源极。绝缘层250可以为有机绝缘材料,也可以为无机绝缘材料。
在上述平坦层260不具备绝缘性能时,可以通过增加绝缘层250于平坦层260和薄膜晶体管阵列层220之间。
进一步地,在形成贯穿所述过渡层和所述平坦层的过孔之后,所述方法还包括:
在所述绝缘层和所述过渡层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第二光刻胶图形;
以所述第二光刻胶图形为掩膜,对所述绝缘层进行刻蚀,形成绝缘层图形;
在所述薄膜晶体管阵列层和所述过渡层上形成阳极材料层;
在所述阳极材料层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第三光刻胶图形;
以所述第三光刻胶图形为掩膜,对所述阳极材料层进行刻蚀,形成阳极。
在形成贯穿过渡层270和平坦层260的第一过孔之后,以第二光刻胶图形为掩膜,对绝缘层250进行干刻,形成绝缘层图形,绝缘层图形包括贯穿绝缘层250的第二过孔,第二过孔在衬底基板210上的正投影位于薄膜晶体管阵列层220中作为源极的金属结构在衬底基板210上的正投影内,如图4所示。
形成覆盖过渡层270和从第二过孔处露出的部分金属结构的阳极材料层,并以第三光刻胶图形为掩膜,刻蚀掉第二过孔外多余的阳极材料层得到阳极280,刻蚀掉第二过孔外多余的过渡层,如图5所示。
其中,阳极可以由低电阻率的金属或金属氧化物制成,例如:铟锡氧化物(ITO)、铟锌氧化物(IZO)、银(Ag)。
在过渡层270为导电材料时,能够提高阳极与源极之间的导电性能,减低电阻率。
进一步地,在形成阳极的步骤之后,所述方法还包括:
在形成有所述阳极的衬底基板上形成像素界定层图形;
在所述像素界定层图形限定出的区域内形成发光层;
在所述发光层上形成的透明的阴极层,所述阴极层在所述衬底基板上的正投影覆盖所述衬底基板。
在形成阳极280之后,可以通过沉积的方式形成覆盖平坦层260和阳极280的像素介定层,并利用掩膜刻蚀得到像素界定层图形290,如图6所示。像素界定层图形290包括贯穿像素界定层的第三过孔,第三过孔在衬底基板210上的正投影位于阳极280在衬底基板210上的正投影内。
上述发光层300覆盖从第三过孔显露的阳极280部分,从而阳极280能够在显示装置显示过程中向发光层300提供电信号。发光层300可以通过蒸镀或打印的方式沉积形成。
上述阴极层310覆盖像素界定图形290和发光层300。阴极层310为透明导电氧化物,可以由锌元素、铟元素、铝元素、锡元素、镁元素、银元素、钙元素、钐元素和钡元素中的至少一种元素的氧化物制作而成。
本发明实施例还提供一种显示基板,如图6所示,包括:
衬底基板;
依次位于所述衬底基板上的薄膜晶体管阵列层;
覆盖所述薄膜晶体管阵列层的平坦层;
位于所述平坦层上的过渡层,所述过渡层与光刻胶之间的粘附度小于所述平坦层与光刻胶之间的粘附度,所述过渡层图形包括有第一过孔,所述平坦层包括有第二过孔,所述第一过孔和第二过孔在所述衬底基板上的正投影重合。
本发明实施例中,通过在平坦层上形成过渡层,又由于过渡层与光刻胶之间的粘附度小于平坦层与光刻胶之间的粘附度,这样光刻胶能够相对于平坦层而言更均匀的在过渡层上涂开,从而以光刻胶形成的第一光刻胶图形为掩膜对过渡层和平坦层进行刻蚀,能够减轻甚至消除显示装置显示时出现的Mura现象,从而提高显示装置的显示效果。因此,本发明提供的技术方案能够提高显示装置的显示效果。
如图6所示,上述衬底基板210可以是柔性衬底基板,比如聚酰亚胺薄膜;也可以是刚性衬底基板,比如石英基板或玻璃基板。
上述薄膜晶体管阵列层220可以是由多个功能膜层共同形成的,多个功能膜层可以包括有源层221、栅极绝缘层222、栅极223、层间绝缘层224、金属层225等等,多个功能膜层共同形成内部具有薄膜晶体管结构的薄膜晶体管阵列层220。上述薄膜晶体管阵列层220背离衬底基板210的一侧露出薄膜晶体管的源极,即多个功能膜层中的一金属结构。
上述有源层221可以由金属氧化物材料制成,例如铟镓锌氧化物(IGZO)材料。有源层221可以是在形成有源材料层后,通过利用掩膜板湿刻有源材料层形成。
上述栅极绝缘层222可以由氧化硅、氮化硅、氮氧化硅等绝缘材料制成。栅极223可以由钼(Mo)、铝(Al)、钛(Ti)、金(Au)、铜(Cu)、铪(Hf)、钽(Ta)等常用金属制成,也可以由铝钕合金(AlNd)、钼铌合金(MoNb)铜合金等合金材料制成。栅极绝缘层222和栅极223可以是在依次形成栅极绝缘材料层和栅极层之后,利用同一掩膜板先湿刻栅极层得到栅极223,再干刻栅极绝缘材料层得到栅极绝缘层222。
层间绝缘层224可以为有机绝缘材料也可以为无机绝缘材料。可以通过光刻形成贯穿层间绝缘层224的两个过孔,再这两个过孔处分别沉积金属层,并对金属层进行图形化刻蚀,分别得到源极和漏极。
其中,在薄膜晶体管阵列层220与衬底基板210之间还可以增加一层遮光图形230,有源层221在衬底基板210的正投影落入该遮光图形230在衬底基板210的正投影内,用于遮挡外界射向有源层221的光,起到保护有源层221的作用。遮光图形230可以由金属材料制成,金属材料可以为钼(Mo)、铝(Al)、钛(Ti)、金(Au)、铜(Cu)、铪(Hf)、钽(Ta)等常用金属,也可以为铝钕合金(AlNd)、钼铌合金(MoNb)等合金材料。
另外,还可以在有源层210和遮光图形230之间形成缓冲层(Buffer)240。缓冲层240可以为氧化硅、氮化硅、氮氧化硅等绝缘材料。
上述平坦层260在具有绝缘性能的情况下可以直接形成于薄膜晶体阵列层220上,用于提供平坦面,使得后续设置于平坦层上的像素之间的段差处于较小的范围内,提升像素间的平坦程度,以便于提高显示效果。平坦层260可以为有机树脂、SOG材料等等,其中,SOG材料能够使像素间的段差从1.1um降至0.026um,大大提升了像素间的平坦程度,SOG材料是指通过机械或化学方法将硅(单晶、多晶、多孔)与玻璃进行粘合后形成的层合材料。
本发明实施例中,通过在平坦层260上形成过渡层270,过渡层270与光刻胶之间的粘附度小于平坦层260与光刻胶之间的粘附度,这样过渡层270上涂覆的光刻胶比在平坦层260上涂覆的更均匀,将对过渡层270上的光刻胶进行曝光、显影后形成的第一光刻胶图形作为掩膜,来对过渡层260和平坦层260进行刻蚀,得到贯穿过渡层260的第一过孔和贯穿平坦层270的第二过孔,如图3所示。
这种方式能够减轻甚至消除显示装置在显示时出现Mura的效果,并且未额外增加掩膜板的数量,也不会对显示基板的其他膜层产生任何影响。
其中,过渡层270可以为导电材料,例如:过渡层270可以由钼(Mo)、铝(Al)等金属材料制成,也可以由铟锡氧化物(ITO)、铟锌氧化物(IZO)等金属氧化物材料制成。过渡层270可以通过溅镀(Sputter)设备在平坦层260上溅射沉积得到。
其中,所述薄膜晶体管阵列层220内构成的薄膜晶体管为顶栅自对准型薄膜晶体管、刻蚀阻挡层型薄膜晶体管或背面沟道刻蚀型薄膜晶体管。
进一步地,如图6所示,所述显示基板还包括位于所述过渡层270背离所述衬底基板210一侧的透明的阴极层310,所述阴极层310由锌元素、铟元素、铝元素、锡元素、镁元素、银元素、钙元素、钐元素和钡元素中的至少一种元素的氧化物制作而成。
阴极层310为透明导电氧化物。
本发明实施例还提供一种显示面板,包括如上所述的显示基板,所述显示面板为顶发射显示面板或底发射显示面板。
本发明实施例还提供了一种显示装置,包括如上所述的显示面板。
显示装置可以是显示器、手机、平板电脑、电视机、可穿戴电子设备、导航显示设备等。
除非另外定义,本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。
上面结合附图对本发明的实施例进行了描述,但是本发明并不局限于上述的具体实施方式,上述的具体实施方式仅仅是示意性的,而不是限制性的,本领域的普通技术人员在本发明的启示下,在不脱离本发明宗旨和权利要求所保护的范围情况下,还可做出很多形式,均属于本发明的保护之内。
Claims (12)
1.一种显示基板的制作方法,其特征在于,包括:
在衬底基板上形成薄膜晶体管阵列层;
形成覆盖所述薄膜晶体管阵列层的平坦层;
在所述平坦层上形成过渡层,所述过渡层与光刻胶之间的粘附度小于所述平坦层与光刻胶之间的粘附度;
在所述过渡层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第一光刻胶图形;
以所述第一光刻胶图形为掩膜,对所述过渡层进行刻蚀,形成贯穿所述过渡层的第一过孔;
以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行刻蚀,形成贯穿所述平坦层的第二过孔,所述第一过孔和所述第二过孔在所述衬底基板上的正投影重合。
2.根据权利要求1所述的方法,其特征在于,所述平坦层为硅-玻璃键合结构SOG材料。
3.根据权利要求1所述的方法,其特征在于,所述以所述第一光刻胶图形为掩膜,对所述过渡层进行刻蚀,形成贯穿所述过渡层的第一过孔的步骤,包括:
以所述第一光刻胶图形为掩膜,对所述过渡层进行湿刻,形成贯穿所述过渡层的第一过孔。
4.根据权利要求1所述的方法,其特征在于,所述以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行刻蚀,形成贯穿所述平坦层的第二过孔的步骤,包括:
以所述第一光刻胶图形为掩膜,通过所述第一过孔对所述平坦层进行干刻,形成贯穿所述平坦层的第二过孔。
5.根据权利要求4所述的方法,其特征在于,所述形成覆盖所述薄膜晶体管阵列层的平坦层的步骤,包括:
形成覆盖所述薄膜晶体管阵列层的绝缘层;
形成覆盖所述绝缘层的平坦层。
6.根据权利要求5所述的方法,其特征在于,在形成贯穿所述平坦层的第二过孔的步骤之后,所述方法还包括:
在所述绝缘层和所述过渡层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第二光刻胶图形;
以所述第二光刻胶图形为掩膜,对所述绝缘层进行刻蚀,形成绝缘层图形;
在所述薄膜晶体管阵列层和所述过渡层上形成阳极材料层;
在所述阳极材料层上形成光刻胶,对所述光刻胶进行曝光,显影后形成第三光刻胶图形;
以所述第三光刻胶图形为掩膜,对所述阳极材料层进行刻蚀,形成阳极。
7.根据权利要求6所述的方法,其特征在于,在形成阳极的步骤之后,所述方法还包括:
在形成有所述阳极的衬底基板上形成像素界定层图形;
在所述像素界定层图形限定出的区域内形成发光层;
在所述发光层上形成透明的阴极层,所述阴极层在所述衬底基板上的正投影覆盖所述衬底基板。
8.一种显示基板,其特征在于,采用如权利要求1-7中任一项所述的制作方法制作得到,所述显示基板包括:
衬底基板;
位于所述衬底基板上的薄膜晶体管阵列层;
覆盖所述薄膜晶体管阵列层的平坦层;
位于所述平坦层上的过渡层,所述过渡层与光刻胶之间的粘附度小于所述平坦层与光刻胶之间的粘附度,所述过渡层包括有第一过孔,所述平坦层包括有第二过孔,所述第一过孔和第二过孔在所述衬底基板上的正投影重合。
9.根据权利要求8所述的显示基板,其特征在于,所述薄膜晶体管阵列层内构成的薄膜晶体管为顶栅自对准型薄膜晶体管、刻蚀阻挡层型薄膜晶体管或背面沟道刻蚀型薄膜晶体管。
10.根据权利要求8所述的显示基板,其特征在于,所述显示基板还包括位于所述过渡层背离所述衬底基板一侧的透明的阴极层,所述阴极层由锌元素、铟元素、铝元素、锡元素、镁元素、银元素、钙元素、钐元素和钡元素中的至少一种元素的氧化物制作而成。
11.一种显示面板,其特征在于,包括如权利要求8-10中任一项所述的显示基板,所述显示面板为顶发射显示面板或底发射显示面板。
12.一种显示装置,其特征在于,包括如权利要求11所述的显示基板。
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