JP2007281406A - ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン - Google Patents

ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン Download PDF

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Publication number
JP2007281406A
JP2007281406A JP2006165159A JP2006165159A JP2007281406A JP 2007281406 A JP2007281406 A JP 2007281406A JP 2006165159 A JP2006165159 A JP 2006165159A JP 2006165159 A JP2006165159 A JP 2006165159A JP 2007281406 A JP2007281406 A JP 2007281406A
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Prior art keywords
stretchable
electronic circuit
semiconductor
curved
substrate
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JP2006165159A
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Japanese (ja)
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JP2007281406A5 (https=
Inventor
John A Rogers
エー． ロジャーズ ジョン
Dahl-Young Khang
カン ダル−ヤン
Yugang Sun
サン ユガン
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University of Illinois at Urbana Champaign
University of Illinois System
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University of Illinois at Urbana Champaign
University of Illinois System
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Publication of JP2007281406A publication Critical patent/JP2007281406A/ja
Publication of JP2007281406A5 publication Critical patent/JP2007281406A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006165159A 2006-04-07 2006-06-14 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン Pending JP2007281406A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79010406P 2006-04-07 2006-04-07

Related Child Applications (1)

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JP2013169101A Division JP5851457B2 (ja) 2006-04-07 2013-08-16 伸縮性半導体素子、伸縮性半導体素子を製造する方法、伸縮性電子回路及び伸縮性電子回路を製造する方法

Publications (2)

Publication Number Publication Date
JP2007281406A true JP2007281406A (ja) 2007-10-25
JP2007281406A5 JP2007281406A5 (https=) 2012-12-06

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2006165159A Pending JP2007281406A (ja) 2006-04-07 2006-06-14 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2013169101A Active JP5851457B2 (ja) 2006-04-07 2013-08-16 伸縮性半導体素子、伸縮性半導体素子を製造する方法、伸縮性電子回路及び伸縮性電子回路を製造する方法
JP2015040251A Active JP6140207B2 (ja) 2006-04-07 2015-03-02 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016175541A Active JP6377689B2 (ja) 2006-04-07 2016-09-08 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016230221A Active JP6574157B2 (ja) 2006-04-07 2016-11-28 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2018130156A Pending JP2019004151A (ja) 2006-04-07 2018-07-09 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン

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JP2013169101A Active JP5851457B2 (ja) 2006-04-07 2013-08-16 伸縮性半導体素子、伸縮性半導体素子を製造する方法、伸縮性電子回路及び伸縮性電子回路を製造する方法
JP2015040251A Active JP6140207B2 (ja) 2006-04-07 2015-03-02 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016175541A Active JP6377689B2 (ja) 2006-04-07 2016-09-08 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2016230221A Active JP6574157B2 (ja) 2006-04-07 2016-11-28 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2018130156A Pending JP2019004151A (ja) 2006-04-07 2018-07-09 ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン

Country Status (4)

Country Link
JP (6) JP2007281406A (https=)
KR (5) KR20070100617A (https=)
MY (4) MY151572A (https=)
TW (7) TWI533459B (https=)

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JP2010517265A (ja) * 2007-01-17 2010-05-20 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷ベースの組立により製作される光学システム
JP2012515436A (ja) * 2009-01-12 2012-07-05 エムシー１０ インコーポレイテッド 非平面撮像アレイの方法及び応用
WO2012091498A1 (ko) * 2010-12-31 2012-07-05 성균관대학교산학협력단 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
US8384080B2 (en) 2009-12-28 2013-02-26 Sony Corporation Thin film transistor, display device, and electronic device
JP2013239716A (ja) * 2006-09-06 2013-11-28 Board Of Trustees Of The Univ Of Illinois ２次元デバイスアレイ
JP2016500922A (ja) * 2012-10-31 2016-01-14 ソイテックＳｏｉｔｅｃ 活性層の初期歪み状態を最終歪み状態へと修正するプロセス
JP2016076484A (ja) * 2014-10-02 2016-05-12 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ストレッチャブル／フォールダブル光電子素子及びその製造方法、並びに該光電子素子を含む装置
JP2017511969A (ja) * 2014-06-20 2017-04-27 コリア インスティテュート オブ マシーナリィ アンド マテリアルズ 量子ドット薄膜形成方法
JP2017103459A (ja) * 2006-04-07 2017-06-08 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
WO2019074105A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2019074115A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2019074111A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP6512389B1 (ja) * 2017-11-07 2019-05-15 大日本印刷株式会社 伸縮性回路基板および物品
US10374072B2 (en) 2004-06-04 2019-08-06 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
WO2020091010A1 (ja) 2018-10-31 2020-05-07 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2020091012A1 (ja) 2018-10-31 2020-05-07 大日本印刷株式会社 配線基板及び配線基板の製造方法
WO2020100625A1 (ja) 2018-11-16 2020-05-22 大日本印刷株式会社 配線基板及び配線基板の製造方法
JP2020088337A (ja) * 2018-11-30 2020-06-04 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111554638A (zh) * 2020-04-16 2020-08-18 上海交通大学 用于可拉伸电子装置的基底及其制备方法
WO2020189790A1 (ja) 2019-03-20 2020-09-24 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111952322A (zh) * 2020-08-14 2020-11-17 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
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US8992807B2 (en) 2010-01-14 2015-03-31 Samsung Techwin Co., Ltd. Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
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KR102229373B1 (ko) * 2013-10-08 2021-03-17 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
KR102255198B1 (ko) * 2014-08-12 2021-05-25 삼성디스플레이 주식회사 스트레처블 기판 및 이를 구비한 유기 발광 표시 장치
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JP6369788B2 (ja) 2014-11-27 2018-08-08 パナソニックＩｐマネジメント株式会社 エレクトロニクス用構造体
KR101630817B1 (ko) 2014-12-10 2016-06-15 한국과학기술연구원 굴곡진 금속 나노와이어 네트워크, 이를 포함하는 신축성 투명전극 및 이의 제조방법
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KR102027115B1 (ko) * 2017-11-28 2019-10-01 고려대학교 세종산학협력단 유기광전소자 및 이의 제조방법
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US10374072B2 (en) 2004-06-04 2019-08-06 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US12074213B2 (en) 2004-06-04 2024-08-27 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
JP2017103459A (ja) * 2006-04-07 2017-06-08 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ ゴム基板上での高パフォーマンスエレクトロニクスのための伸縮性単結晶シリコン
JP2013239716A (ja) * 2006-09-06 2013-11-28 Board Of Trustees Of The Univ Of Illinois ２次元デバイスアレイ
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JP2010517265A (ja) * 2007-01-17 2010-05-20 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 印刷ベースの組立により製作される光学システム
JP2012515436A (ja) * 2009-01-12 2012-07-05 エムシー１０ インコーポレイテッド 非平面撮像アレイの方法及び応用
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WO2012091498A1 (ko) * 2010-12-31 2012-07-05 성균관대학교산학협력단 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
JP2016500922A (ja) * 2012-10-31 2016-01-14 ソイテックＳｏｉｔｅｃ 活性層の初期歪み状態を最終歪み状態へと修正するプロセス
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