KR20070100617A - 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체 - Google Patents

고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체 Download PDF

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Publication number
KR20070100617A
KR20070100617A KR1020060053675A KR20060053675A KR20070100617A KR 20070100617 A KR20070100617 A KR 20070100617A KR 1020060053675 A KR1020060053675 A KR 1020060053675A KR 20060053675 A KR20060053675 A KR 20060053675A KR 20070100617 A KR20070100617 A KR 20070100617A
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South Korea
Prior art keywords
compressible
stretchable
electronic circuit
substrate
semiconductor
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Korean (ko)
Inventor
존 에이. 로저스
강달영
선유강
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더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈
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Publication of KR20070100617A publication Critical patent/KR20070100617A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020060053675A 2006-04-07 2006-06-14 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체 Ceased KR20070100617A (ko)

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US79010406P 2006-04-07 2006-04-07
US60/790,104 2006-04-07

Related Child Applications (1)

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KR1020130131753A Division KR20130133733A (ko) 2006-04-07 2013-10-31 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체

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KR20070100617A true KR20070100617A (ko) 2007-10-11

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KR1020060053675A Ceased KR20070100617A (ko) 2006-04-07 2006-06-14 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정실리콘 형성체
KR1020130131753A Ceased KR20130133733A (ko) 2006-04-07 2013-10-31 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020140096828A Ceased KR20140107158A (ko) 2006-04-07 2014-07-29 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR20150040631A Ceased KR20150044865A (ko) 2006-04-07 2015-03-24 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020170080342A Ceased KR20170077097A (ko) 2006-04-07 2017-06-26 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체

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KR1020130131753A Ceased KR20130133733A (ko) 2006-04-07 2013-10-31 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020140096828A Ceased KR20140107158A (ko) 2006-04-07 2014-07-29 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR20150040631A Ceased KR20150044865A (ko) 2006-04-07 2015-03-24 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체
KR1020170080342A Ceased KR20170077097A (ko) 2006-04-07 2017-06-26 고성능 전자제품을 위한 잡아늘이거나 압축가능한 단결정 실리콘 형성체

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JP (6) JP2007281406A (https=)
KR (5) KR20070100617A (https=)
MY (4) MY151572A (https=)
TW (7) TWI533459B (https=)

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WO2010081137A3 (en) * 2009-01-12 2010-11-04 Mc10, Inc. Methods and applications of non-planar imaging arrays
KR101048356B1 (ko) * 2009-06-08 2011-07-14 서울대학교산학협력단 잡아 늘일 수 있는 전자소자들의 금속 연결 구조 및 그 제조방법
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
KR20150041501A (ko) * 2013-10-08 2015-04-16 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
KR20160040048A (ko) * 2014-10-02 2016-04-12 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10213985B2 (en) 2010-01-14 2019-02-26 Sungkyunkwan University Foundation For Corporate Collaboration Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
KR20190091861A (ko) * 2018-01-29 2019-08-07 충북대학교 산학협력단 구리 전극 제작 방법 및 구리 전극 제작 시스템

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CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
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KR101630817B1 (ko) 2014-12-10 2016-06-15 한국과학기술연구원 굴곡진 금속 나노와이어 네트워크, 이를 포함하는 신축성 투명전극 및 이의 제조방법
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US11612054B2 (en) 2017-10-12 2023-03-21 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing wiring board
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KR102119023B1 (ko) * 2018-04-23 2020-06-04 포항공과대학교 산학협력단 2종 이상의 올리고머를 이용한 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
WO2010081137A3 (en) * 2009-01-12 2010-11-04 Mc10, Inc. Methods and applications of non-planar imaging arrays
KR101048356B1 (ko) * 2009-06-08 2011-07-14 서울대학교산학협력단 잡아 늘일 수 있는 전자소자들의 금속 연결 구조 및 그 제조방법
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US10213985B2 (en) 2010-01-14 2019-02-26 Sungkyunkwan University Foundation For Corporate Collaboration Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
KR20150041501A (ko) * 2013-10-08 2015-04-16 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
KR20160040048A (ko) * 2014-10-02 2016-04-12 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
KR20220027138A (ko) * 2014-10-02 2022-03-07 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
KR20190091861A (ko) * 2018-01-29 2019-08-07 충북대학교 산학협력단 구리 전극 제작 방법 및 구리 전극 제작 시스템

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JP2014017495A (ja) 2014-01-30
KR20140107158A (ko) 2014-09-04
JP2007281406A (ja) 2007-10-25
TW201519287A (zh) 2015-05-16
TW201042951A (en) 2010-12-01
TW201428984A (zh) 2014-07-16
JP5851457B2 (ja) 2016-02-03
JP2017038064A (ja) 2017-02-16
JP6377689B2 (ja) 2018-08-22
MY163588A (en) 2017-09-29
JP6574157B2 (ja) 2019-09-11
MY151572A (en) 2014-06-13
MY152238A (en) 2014-09-15
TWI466488B (zh) 2014-12-21
JP2015133510A (ja) 2015-07-23
TWI336491B (en) 2011-01-21
TWI533459B (zh) 2016-05-11
TW201717261A (zh) 2017-05-16
KR20150044865A (ko) 2015-04-27
TWI427802B (zh) 2014-02-21
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JP6140207B2 (ja) 2017-05-31
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MY143492A (en) 2011-05-31
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TW200739681A (en) 2007-10-16
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