JP2007214171A5 - - Google Patents

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Publication number
JP2007214171A5
JP2007214171A5 JP2006029411A JP2006029411A JP2007214171A5 JP 2007214171 A5 JP2007214171 A5 JP 2007214171A5 JP 2006029411 A JP2006029411 A JP 2006029411A JP 2006029411 A JP2006029411 A JP 2006029411A JP 2007214171 A5 JP2007214171 A5 JP 2007214171A5
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JP
Japan
Prior art keywords
sample
processed
etching
gas
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006029411A
Other languages
English (en)
Japanese (ja)
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JP2007214171A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006029411A priority Critical patent/JP2007214171A/ja
Priority claimed from JP2006029411A external-priority patent/JP2007214171A/ja
Priority to KR1020060020850A priority patent/KR100794693B1/ko
Priority to TW095107583A priority patent/TW200731397A/zh
Priority to US11/369,134 priority patent/US20070181528A1/en
Publication of JP2007214171A publication Critical patent/JP2007214171A/ja
Publication of JP2007214171A5 publication Critical patent/JP2007214171A5/ja
Pending legal-status Critical Current

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JP2006029411A 2006-02-07 2006-02-07 エッチング処理方法 Pending JP2007214171A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006029411A JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法
KR1020060020850A KR100794693B1 (ko) 2006-02-07 2006-03-06 에칭 처리방법
TW095107583A TW200731397A (en) 2006-02-07 2006-03-07 Etching processing method
US11/369,134 US20070181528A1 (en) 2006-02-07 2006-03-07 Method of etching treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006029411A JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法

Publications (2)

Publication Number Publication Date
JP2007214171A JP2007214171A (ja) 2007-08-23
JP2007214171A5 true JP2007214171A5 (https=) 2009-02-12

Family

ID=38332938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006029411A Pending JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法

Country Status (4)

Country Link
US (1) US20070181528A1 (https=)
JP (1) JP2007214171A (https=)
KR (1) KR100794693B1 (https=)
TW (1) TW200731397A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8591755B2 (en) * 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
JP6259610B2 (ja) * 2013-08-21 2018-01-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN104882375B (zh) * 2014-02-28 2018-05-25 无锡华润上华科技有限公司 一种防缺陷的半导体器件蚀刻方法及半导体器件形成方法
JP6868421B2 (ja) * 2017-03-08 2021-05-12 株式会社Ｓｏｋｅｎ 点火装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136095A (ja) * 1991-11-14 1993-06-01 Nec Corp ドライエツチング装置
JP3319083B2 (ja) * 1993-10-15 2002-08-26 ソニー株式会社 プラズマ処理方法
JPH08274073A (ja) * 1995-03-31 1996-10-18 Sony Corp アルミニウム系金属膜のエッチング方法
JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
JPH09191005A (ja) * 1996-12-26 1997-07-22 Hitachi Ltd 試料温度制御方法及び真空処理装置
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US5915202A (en) * 1997-05-15 1999-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Blanket etching process for formation of tungsten plugs
US5962345A (en) * 1998-07-13 1999-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reduce contact resistance by means of in-situ ICP
JP3496760B2 (ja) * 2001-03-08 2004-02-16 松下電器産業株式会社 半導体装置の製造方法
US6569778B2 (en) * 2001-06-28 2003-05-27 Hynix Semiconductor Inc. Method for forming fine pattern in semiconductor device
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
US6787475B2 (en) * 2001-09-06 2004-09-07 Zhuxu Wang Flash step preparatory to dielectric etch
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置

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