JP2007214171A - エッチング処理方法 - Google Patents

エッチング処理方法 Download PDF

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Publication number
JP2007214171A
JP2007214171A JP2006029411A JP2006029411A JP2007214171A JP 2007214171 A JP2007214171 A JP 2007214171A JP 2006029411 A JP2006029411 A JP 2006029411A JP 2006029411 A JP2006029411 A JP 2006029411A JP 2007214171 A JP2007214171 A JP 2007214171A
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JP
Japan
Prior art keywords
etching
sample
processed
processing
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006029411A
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English (en)
Japanese (ja)
Other versions
JP2007214171A5 (https=
Inventor
Kunihiko Koroyasu
邦彦 頃安
Nobuyuki Negishi
伸幸 根岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2006029411A priority Critical patent/JP2007214171A/ja
Priority to KR1020060020850A priority patent/KR100794693B1/ko
Priority to TW095107583A priority patent/TW200731397A/zh
Priority to US11/369,134 priority patent/US20070181528A1/en
Publication of JP2007214171A publication Critical patent/JP2007214171A/ja
Publication of JP2007214171A5 publication Critical patent/JP2007214171A5/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60S—SERVICING, CLEANING, REPAIRING, SUPPORTING, LIFTING, OR MANOEUVRING OF VEHICLES, NOT OTHERWISE PROVIDED FOR
    • B60S3/00—Vehicle cleaning apparatus not integral with vehicles
    • B60S3/04—Vehicle cleaning apparatus not integral with vehicles for exteriors of land vehicles
    • B60S3/045—Other hand-held cleaning arrangements, e.g. with sponges, brushes, scrapers or the like
    • B60S3/047—Other hand-held cleaning arrangements, e.g. with sponges, brushes, scrapers or the like using liquid or gas distributing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/026—Cleaning by making use of hand-held spray guns; Fluid preparations therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2230/00—Other cleaning aspects applicable to all B08B range
    • B08B2230/01—Cleaning with steam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006029411A 2006-02-07 2006-02-07 エッチング処理方法 Pending JP2007214171A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006029411A JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法
KR1020060020850A KR100794693B1 (ko) 2006-02-07 2006-03-06 에칭 처리방법
TW095107583A TW200731397A (en) 2006-02-07 2006-03-07 Etching processing method
US11/369,134 US20070181528A1 (en) 2006-02-07 2006-03-07 Method of etching treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006029411A JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法

Publications (2)

Publication Number Publication Date
JP2007214171A true JP2007214171A (ja) 2007-08-23
JP2007214171A5 JP2007214171A5 (https=) 2009-02-12

Family

ID=38332938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006029411A Pending JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法

Country Status (4)

Country Link
US (1) US20070181528A1 (https=)
JP (1) JP2007214171A (https=)
KR (1) KR100794693B1 (https=)
TW (1) TW200731397A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015041655A (ja) * 2013-08-21 2015-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2021082701A (ja) * 2019-11-19 2021-05-27 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8591755B2 (en) * 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
CN104882375B (zh) * 2014-02-28 2018-05-25 无锡华润上华科技有限公司 一种防缺陷的半导体器件蚀刻方法及半导体器件形成方法
JP6868421B2 (ja) * 2017-03-08 2021-05-12 株式会社Ｓｏｋｅｎ 点火装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136095A (ja) * 1991-11-14 1993-06-01 Nec Corp ドライエツチング装置
JPH08274073A (ja) * 1995-03-31 1996-10-18 Sony Corp アルミニウム系金属膜のエッチング方法
JPH09191005A (ja) * 1996-12-26 1997-07-22 Hitachi Ltd 試料温度制御方法及び真空処理装置
JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
JP2001517367A (ja) * 1997-03-19 2001-10-02 ラム・リサーチ・コーポレーション 導電層をエッチングする方法
JP3319083B2 (ja) * 1993-10-15 2002-08-26 ソニー株式会社 プラズマ処理方法
JP2003051443A (ja) * 2001-06-28 2003-02-21 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
JP3496760B2 (ja) * 2001-03-08 2004-02-16 松下電器産業株式会社 半導体装置の製造方法
JP2006041470A (ja) * 2004-06-23 2006-02-09 Hitachi High-Technologies Corp ドライエッチング方法およびその装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5915202A (en) * 1997-05-15 1999-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Blanket etching process for formation of tungsten plugs
US5962345A (en) * 1998-07-13 1999-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reduce contact resistance by means of in-situ ICP
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
US6787475B2 (en) * 2001-09-06 2004-09-07 Zhuxu Wang Flash step preparatory to dielectric etch
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136095A (ja) * 1991-11-14 1993-06-01 Nec Corp ドライエツチング装置
JP3319083B2 (ja) * 1993-10-15 2002-08-26 ソニー株式会社 プラズマ処理方法
JPH08274073A (ja) * 1995-03-31 1996-10-18 Sony Corp アルミニウム系金属膜のエッチング方法
JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
JPH09191005A (ja) * 1996-12-26 1997-07-22 Hitachi Ltd 試料温度制御方法及び真空処理装置
JP2001517367A (ja) * 1997-03-19 2001-10-02 ラム・リサーチ・コーポレーション 導電層をエッチングする方法
JP3496760B2 (ja) * 2001-03-08 2004-02-16 松下電器産業株式会社 半導体装置の製造方法
JP2003051443A (ja) * 2001-06-28 2003-02-21 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
JP2006041470A (ja) * 2004-06-23 2006-02-09 Hitachi High-Technologies Corp ドライエッチング方法およびその装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015041655A (ja) * 2013-08-21 2015-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2021082701A (ja) * 2019-11-19 2021-05-27 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
JP7336365B2 (ja) 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Also Published As

Publication number Publication date
TWI295486B (https=) 2008-04-01
TW200731397A (en) 2007-08-16
KR100794693B1 (ko) 2008-01-14
US20070181528A1 (en) 2007-08-09
KR20070080533A (ko) 2007-08-10

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