KR100794693B1 - 에칭 처리방법 - Google Patents

에칭 처리방법 Download PDF

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Publication number
KR100794693B1
KR100794693B1 KR1020060020850A KR20060020850A KR100794693B1 KR 100794693 B1 KR100794693 B1 KR 100794693B1 KR 1020060020850 A KR1020060020850 A KR 1020060020850A KR 20060020850 A KR20060020850 A KR 20060020850A KR 100794693 B1 KR100794693 B1 KR 100794693B1
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KR
South Korea
Prior art keywords
etching
high frequency
workpiece
plasma
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060020850A
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English (en)
Korean (ko)
Other versions
KR20070080533A (ko
Inventor
구니히코 고로야스
노부유키 네기시
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20070080533A publication Critical patent/KR20070080533A/ko
Application granted granted Critical
Publication of KR100794693B1 publication Critical patent/KR100794693B1/ko
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60S—SERVICING, CLEANING, REPAIRING, SUPPORTING, LIFTING, OR MANOEUVRING OF VEHICLES, NOT OTHERWISE PROVIDED FOR
    • B60S3/00—Vehicle cleaning apparatus not integral with vehicles
    • B60S3/04—Vehicle cleaning apparatus not integral with vehicles for exteriors of land vehicles
    • B60S3/045—Other hand-held cleaning arrangements, e.g. with sponges, brushes, scrapers or the like
    • B60S3/047—Other hand-held cleaning arrangements, e.g. with sponges, brushes, scrapers or the like using liquid or gas distributing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/026—Cleaning by making use of hand-held spray guns; Fluid preparations therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2230/00—Other cleaning aspects applicable to all B08B range
    • B08B2230/01—Cleaning with steam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020060020850A 2006-02-07 2006-03-06 에칭 처리방법 Expired - Fee Related KR100794693B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006029411A JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法
JPJP-P-2006-00029411 2006-02-07

Publications (2)

Publication Number Publication Date
KR20070080533A KR20070080533A (ko) 2007-08-10
KR100794693B1 true KR100794693B1 (ko) 2008-01-14

Family

ID=38332938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060020850A Expired - Fee Related KR100794693B1 (ko) 2006-02-07 2006-03-06 에칭 처리방법

Country Status (4)

Country Link
US (1) US20070181528A1 (https=)
JP (1) JP2007214171A (https=)
KR (1) KR100794693B1 (https=)
TW (1) TW200731397A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8591755B2 (en) * 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
JP6259610B2 (ja) * 2013-08-21 2018-01-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN104882375B (zh) * 2014-02-28 2018-05-25 无锡华润上华科技有限公司 一种防缺陷的半导体器件蚀刻方法及半导体器件形成方法
JP6868421B2 (ja) * 2017-03-08 2021-05-12 株式会社Ｓｏｋｅｎ 点火装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030011200A (ko) * 2001-07-24 2003-02-07 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마에칭방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136095A (ja) * 1991-11-14 1993-06-01 Nec Corp ドライエツチング装置
JP3319083B2 (ja) * 1993-10-15 2002-08-26 ソニー株式会社 プラズマ処理方法
JPH08274073A (ja) * 1995-03-31 1996-10-18 Sony Corp アルミニウム系金属膜のエッチング方法
JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
JPH09191005A (ja) * 1996-12-26 1997-07-22 Hitachi Ltd 試料温度制御方法及び真空処理装置
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US5915202A (en) * 1997-05-15 1999-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Blanket etching process for formation of tungsten plugs
US5962345A (en) * 1998-07-13 1999-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reduce contact resistance by means of in-situ ICP
JP3496760B2 (ja) * 2001-03-08 2004-02-16 松下電器産業株式会社 半導体装置の製造方法
US6569778B2 (en) * 2001-06-28 2003-05-27 Hynix Semiconductor Inc. Method for forming fine pattern in semiconductor device
US6787475B2 (en) * 2001-09-06 2004-09-07 Zhuxu Wang Flash step preparatory to dielectric etch
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030011200A (ko) * 2001-07-24 2003-02-07 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마에칭방법

Also Published As

Publication number Publication date
TWI295486B (https=) 2008-04-01
JP2007214171A (ja) 2007-08-23
TW200731397A (en) 2007-08-16
US20070181528A1 (en) 2007-08-09
KR20070080533A (ko) 2007-08-10

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