TWI295486B - - Google Patents

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Publication number
TWI295486B
TWI295486B TW095107583A TW95107583A TWI295486B TW I295486 B TWI295486 B TW I295486B TW 095107583 A TW095107583 A TW 095107583A TW 95107583 A TW95107583 A TW 95107583A TW I295486 B TWI295486 B TW I295486B
Authority
TW
Taiwan
Prior art keywords
sample
processed
etching
wafer
processing
Prior art date
Application number
TW095107583A
Other languages
English (en)
Chinese (zh)
Other versions
TW200731397A (en
Inventor
Kunihiko Koroyasu
Nobuyuki Negishi
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW200731397A publication Critical patent/TW200731397A/zh
Application granted granted Critical
Publication of TWI295486B publication Critical patent/TWI295486B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60S—SERVICING, CLEANING, REPAIRING, SUPPORTING, LIFTING, OR MANOEUVRING OF VEHICLES, NOT OTHERWISE PROVIDED FOR
    • B60S3/00—Vehicle cleaning apparatus not integral with vehicles
    • B60S3/04—Vehicle cleaning apparatus not integral with vehicles for exteriors of land vehicles
    • B60S3/045—Other hand-held cleaning arrangements, e.g. with sponges, brushes, scrapers or the like
    • B60S3/047—Other hand-held cleaning arrangements, e.g. with sponges, brushes, scrapers or the like using liquid or gas distributing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/026—Cleaning by making use of hand-held spray guns; Fluid preparations therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2230/00—Other cleaning aspects applicable to all B08B range
    • B08B2230/01—Cleaning with steam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095107583A 2006-02-07 2006-03-07 Etching processing method TW200731397A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006029411A JP2007214171A (ja) 2006-02-07 2006-02-07 エッチング処理方法

Publications (2)

Publication Number Publication Date
TW200731397A TW200731397A (en) 2007-08-16
TWI295486B true TWI295486B (https=) 2008-04-01

Family

ID=38332938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107583A TW200731397A (en) 2006-02-07 2006-03-07 Etching processing method

Country Status (4)

Country Link
US (1) US20070181528A1 (https=)
JP (1) JP2007214171A (https=)
KR (1) KR100794693B1 (https=)
TW (1) TW200731397A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882375A (zh) * 2014-02-28 2015-09-02 无锡华润上华科技有限公司 一种防缺陷的半导体器件蚀刻方法及半导体器件形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8591755B2 (en) * 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
JP6259610B2 (ja) * 2013-08-21 2018-01-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6868421B2 (ja) * 2017-03-08 2021-05-12 株式会社Ｓｏｋｅｎ 点火装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136095A (ja) * 1991-11-14 1993-06-01 Nec Corp ドライエツチング装置
JP3319083B2 (ja) * 1993-10-15 2002-08-26 ソニー株式会社 プラズマ処理方法
JPH08274073A (ja) * 1995-03-31 1996-10-18 Sony Corp アルミニウム系金属膜のエッチング方法
JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
JPH09191005A (ja) * 1996-12-26 1997-07-22 Hitachi Ltd 試料温度制御方法及び真空処理装置
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US5915202A (en) * 1997-05-15 1999-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Blanket etching process for formation of tungsten plugs
US5962345A (en) * 1998-07-13 1999-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reduce contact resistance by means of in-situ ICP
JP3496760B2 (ja) * 2001-03-08 2004-02-16 松下電器産業株式会社 半導体装置の製造方法
US6569778B2 (en) * 2001-06-28 2003-05-27 Hynix Semiconductor Inc. Method for forming fine pattern in semiconductor device
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
US6787475B2 (en) * 2001-09-06 2004-09-07 Zhuxu Wang Flash step preparatory to dielectric etch
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104882375A (zh) * 2014-02-28 2015-09-02 无锡华润上华科技有限公司 一种防缺陷的半导体器件蚀刻方法及半导体器件形成方法
CN104882375B (zh) * 2014-02-28 2018-05-25 无锡华润上华科技有限公司 一种防缺陷的半导体器件蚀刻方法及半导体器件形成方法

Also Published As

Publication number Publication date
JP2007214171A (ja) 2007-08-23
TW200731397A (en) 2007-08-16
KR100794693B1 (ko) 2008-01-14
US20070181528A1 (en) 2007-08-09
KR20070080533A (ko) 2007-08-10

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MM4A Annulment or lapse of patent due to non-payment of fees