WO2008120715A1 - 基板処理装置及びその処理室内の状態安定化方法 - Google Patents

基板処理装置及びその処理室内の状態安定化方法 Download PDF

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Publication number
WO2008120715A1
WO2008120715A1 PCT/JP2008/056080 JP2008056080W WO2008120715A1 WO 2008120715 A1 WO2008120715 A1 WO 2008120715A1 JP 2008056080 W JP2008056080 W JP 2008056080W WO 2008120715 A1 WO2008120715 A1 WO 2008120715A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing chamber
processing apparatus
substrate
substrate processing
status
Prior art date
Application number
PCT/JP2008/056080
Other languages
English (en)
French (fr)
Inventor
Noriaki Shimizu
Seiichi Kaise
Kiyohito Iijima
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2008120715A1 publication Critical patent/WO2008120715A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

　処理室内に配置され、基板を載置するサセプタと、サセプタに高周波電力を供給する高周波電源と、処理室内に所定のガスを供給するガス供給部と、処理室を排気する排気部と、処理室内で基板のプロセス処理を開始するのに先立って、サセプタに基板を載置しない状態で、処理室内にガス供給部から所定のガスを供給しながら排気部で排気を行って、高周波電源からの高周波電力をサセプタに印加して、処理室内の状態を安定化させる処理を実行させる制御部とを備える基板処理装置が開示される。
PCT/JP2008/056080 2007-03-30 2008-03-28 基板処理装置及びその処理室内の状態安定化方法 WO2008120715A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-093582 2007-03-30
JP2007093582A JP4646941B2 (ja) 2007-03-30 2007-03-30 基板処理装置及びその処理室内の状態安定化方法

Publications (1)

Publication Number Publication Date
WO2008120715A1 true WO2008120715A1 (ja) 2008-10-09

Family

ID=39808295

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056080 WO2008120715A1 (ja) 2007-03-30 2008-03-28 基板処理装置及びその処理室内の状態安定化方法

Country Status (3)

Country Link
JP (1) JP4646941B2 (ja)
TW (1) TWI385724B (ja)
WO (1) WO2008120715A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG178372A1 (en) * 2009-09-10 2012-03-29 Lam Res Corp Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
JP5813389B2 (ja) * 2011-06-24 2015-11-17 東京エレクトロン株式会社 基板処理時間設定方法及び記憶媒体
KR102102003B1 (ko) * 2012-05-25 2020-04-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 플라즈마 처리 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244065A (ja) * 2004-02-27 2005-09-08 Hitachi High-Technologies Corp プラズマ処理装置および処理方法
JP2006210948A (ja) * 2006-04-20 2006-08-10 Hitachi High-Technologies Corp プラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244065A (ja) * 2004-02-27 2005-09-08 Hitachi High-Technologies Corp プラズマ処理装置および処理方法
JP2006210948A (ja) * 2006-04-20 2006-08-10 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
JP2008251967A (ja) 2008-10-16
TWI385724B (zh) 2013-02-11
JP4646941B2 (ja) 2011-03-09
TW200903630A (en) 2009-01-16

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