JP2009200483A5 - - Google Patents
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- Publication number
- JP2009200483A5 JP2009200483A5 JP2009013724A JP2009013724A JP2009200483A5 JP 2009200483 A5 JP2009200483 A5 JP 2009200483A5 JP 2009013724 A JP2009013724 A JP 2009013724A JP 2009013724 A JP2009013724 A JP 2009013724A JP 2009200483 A5 JP2009200483 A5 JP 2009200483A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- wall surface
- thickness
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims 25
- 238000000034 method Methods 0.000 claims 16
- 239000007789 gas Substances 0.000 claims 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009013724A JP2009200483A (ja) | 2008-01-24 | 2009-01-24 | シリコン酸化膜の形成方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008013564 | 2008-01-24 | ||
| JP2009013724A JP2009200483A (ja) | 2008-01-24 | 2009-01-24 | シリコン酸化膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009200483A JP2009200483A (ja) | 2009-09-03 |
| JP2009200483A5 true JP2009200483A5 (https=) | 2012-01-26 |
Family
ID=40901251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009013724A Pending JP2009200483A (ja) | 2008-01-24 | 2009-01-24 | シリコン酸化膜の形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110017586A1 (https=) |
| JP (1) | JP2009200483A (https=) |
| KR (1) | KR101249611B1 (https=) |
| TW (1) | TW200941579A (https=) |
| WO (1) | WO2009093760A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4845917B2 (ja) | 2008-03-28 | 2011-12-28 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2011097029A (ja) * | 2009-09-30 | 2011-05-12 | Tokyo Electron Ltd | 半導体装置の製造方法 |
| JP2011077321A (ja) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置 |
| JP2012216667A (ja) * | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | プラズマ処理方法 |
| US8642479B2 (en) * | 2011-07-14 | 2014-02-04 | Nanya Technology Corporation | Method for forming openings in semiconductor device |
| KR101982366B1 (ko) * | 2011-09-28 | 2019-05-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 장치 |
| KR101854609B1 (ko) | 2011-12-27 | 2018-05-08 | 삼성전자주식회사 | 게이트 절연층의 형성 방법 |
| US20130320453A1 (en) * | 2012-06-01 | 2013-12-05 | Abhijit Jayant Pethe | Area scaling on trigate transistors |
| JP2014209515A (ja) * | 2013-04-16 | 2014-11-06 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6125467B2 (ja) * | 2014-06-16 | 2017-05-10 | 富士フイルム株式会社 | プリント注文受付機とその作動方法および作動プログラム |
| KR102315002B1 (ko) * | 2017-03-27 | 2021-10-20 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치 |
| US20240177990A1 (en) * | 2022-11-29 | 2024-05-30 | Applied Materials, Inc. | Oxidation conformality improvement with in-situ integrated processing |
| CN116844939B (zh) * | 2023-07-06 | 2024-08-13 | 北京屹唐半导体科技股份有限公司 | 用于半导体工件的低压氧化处理方法和装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0519296A (ja) * | 1991-07-12 | 1993-01-29 | Matsushita Electric Ind Co Ltd | 絶縁膜の形成方法及び絶縁膜形成装置 |
| JPH11219950A (ja) * | 1998-02-03 | 1999-08-10 | Hitachi Ltd | 半導体集積回路の製造方法並びにその製造装置 |
| JP3505493B2 (ja) * | 1999-09-16 | 2004-03-08 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP2002033381A (ja) * | 2000-07-19 | 2002-01-31 | Mitsubishi Electric Corp | 素子分離絶縁膜の形成方法及び、半導体装置の製造方法 |
| CN101399198A (zh) * | 2001-01-22 | 2009-04-01 | 东京毅力科创株式会社 | 电子器件材料的制造方法 |
| JP2002280369A (ja) * | 2001-03-19 | 2002-09-27 | Canon Sales Co Inc | シリコン基板の酸化膜形成装置及び酸化膜形成方法 |
| JP2004047950A (ja) * | 2002-04-03 | 2004-02-12 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および半導体製造装置 |
| AU2003246154A1 (en) * | 2002-08-30 | 2004-03-29 | Fujitsu Amd Semiconductor Limited | Semiconductor device and its manufacturing method |
| JP4694108B2 (ja) * | 2003-05-23 | 2011-06-08 | 東京エレクトロン株式会社 | 酸化膜形成方法、酸化膜形成装置および電子デバイス材料 |
| JP2005286339A (ja) * | 2004-03-29 | 2005-10-13 | Sharp Corp | シリコンカーバイド基板上に二酸化シリコンを生成する高密度プラズマプロセス |
| JP4643168B2 (ja) * | 2004-03-31 | 2011-03-02 | 株式会社東芝 | シリコン基板の酸化処理方法 |
| US20060105114A1 (en) * | 2004-11-16 | 2006-05-18 | White John M | Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs |
| JP2006286662A (ja) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法 |
-
2009
- 2009-01-23 TW TW098103133A patent/TW200941579A/zh unknown
- 2009-01-23 WO PCT/JP2009/051517 patent/WO2009093760A1/ja not_active Ceased
- 2009-01-23 KR KR1020107017810A patent/KR101249611B1/ko active Active
- 2009-01-24 JP JP2009013724A patent/JP2009200483A/ja active Pending
-
2010
- 2010-07-22 US US12/805,301 patent/US20110017586A1/en not_active Abandoned
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