JP2007184588A5 - - Google Patents
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- Publication number
- JP2007184588A5 JP2007184588A5 JP2006345124A JP2006345124A JP2007184588A5 JP 2007184588 A5 JP2007184588 A5 JP 2007184588A5 JP 2006345124 A JP2006345124 A JP 2006345124A JP 2006345124 A JP2006345124 A JP 2006345124A JP 2007184588 A5 JP2007184588 A5 JP 2007184588A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric material
- depositing
- forming
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000463 material Substances 0.000 claims 19
- 239000003989 dielectric material Substances 0.000 claims 17
- 238000000151 deposition Methods 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 238000002955 isolation Methods 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 239000011800 void material Substances 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/321,206 | 2005-12-29 | ||
| US11/321,206 US7514336B2 (en) | 2005-12-29 | 2005-12-29 | Robust shallow trench isolation structures and a method for forming shallow trench isolation structures |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007184588A JP2007184588A (ja) | 2007-07-19 |
| JP2007184588A5 true JP2007184588A5 (enExample) | 2011-01-13 |
| JP5579358B2 JP5579358B2 (ja) | 2014-08-27 |
Family
ID=38068283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006345124A Active JP5579358B2 (ja) | 2005-12-29 | 2006-12-22 | 頑丈なシャロー・トレンチ分離構造およびシャロー・トレンチ分離構造を形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7514336B2 (enExample) |
| EP (1) | EP1806780A3 (enExample) |
| JP (1) | JP5579358B2 (enExample) |
| KR (1) | KR101292025B1 (enExample) |
| CN (1) | CN100501968C (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7514336B2 (en) * | 2005-12-29 | 2009-04-07 | Agere Systems Inc. | Robust shallow trench isolation structures and a method for forming shallow trench isolation structures |
| US20110244683A1 (en) * | 2010-04-01 | 2011-10-06 | Michiaki Sano | Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing |
| CN103531519B (zh) * | 2012-07-02 | 2016-03-23 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US9768055B2 (en) * | 2012-08-21 | 2017-09-19 | Stmicroelectronics, Inc. | Isolation regions for SOI devices |
| US10468529B2 (en) | 2017-07-11 | 2019-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device structure with etch stop layer |
| KR102661930B1 (ko) | 2018-08-13 | 2024-04-29 | 삼성전자주식회사 | 집적회로 소자 |
| CN109273532B (zh) * | 2018-09-12 | 2022-03-11 | 上海华力微电子有限公司 | 应用于高压电路防静电保护的无回滞效应硅控整流器 |
| CN116053211A (zh) * | 2022-12-30 | 2023-05-02 | 联合微电子中心有限责任公司 | 一种防止源漏区漏电的结构及其制备方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330410A (ja) * | 1995-05-31 | 1996-12-13 | Sony Corp | 素子分離方法、素子分離構造、及び半導体装置 |
| TW388100B (en) * | 1997-02-18 | 2000-04-21 | Hitachi Ulsi Eng Corp | Semiconductor deivce and process for producing the same |
| US6228741B1 (en) * | 1998-01-13 | 2001-05-08 | Texas Instruments Incorporated | Method for trench isolation of semiconductor devices |
| WO1999044223A2 (en) * | 1998-02-27 | 1999-09-02 | Lsi Logic Corporation | Process of shallow trench isolating active devices to avoid sub-threshold kinks arising from corner effects without additional processing |
| KR100280107B1 (ko) * | 1998-05-07 | 2001-03-02 | 윤종용 | 트렌치 격리 형성 방법 |
| KR100286127B1 (ko) * | 1998-06-24 | 2001-04-16 | 윤종용 | 반도체 장치의 트렌치 격리 형성 방법 |
| TW398053B (en) * | 1998-07-31 | 2000-07-11 | United Microelectronics Corp | Manufacturing of shallow trench isolation |
| US6319794B1 (en) * | 1998-10-14 | 2001-11-20 | International Business Machines Corporation | Structure and method for producing low leakage isolation devices |
| JP2000223704A (ja) * | 1999-01-29 | 2000-08-11 | Sony Corp | 半導体装置およびその製造方法 |
| US6255194B1 (en) * | 1999-06-03 | 2001-07-03 | Samsung Electronics Co., Ltd. | Trench isolation method |
| US6500729B1 (en) * | 2000-06-02 | 2002-12-31 | Agere Systems Guardian Corp. | Method for reducing dishing related issues during the formation of shallow trench isolation structures |
| US6921947B2 (en) * | 2000-12-15 | 2005-07-26 | Renesas Technology Corp. | Semiconductor device having recessed isolation insulation film |
| KR100568100B1 (ko) * | 2001-03-05 | 2006-04-05 | 삼성전자주식회사 | 트렌치형 소자 분리막 형성 방법 |
| JP2003151956A (ja) * | 2001-11-19 | 2003-05-23 | Sony Corp | 半導体装置製造工程における窒化シリコン膜のエッチング方法 |
| TW540135B (en) * | 2002-04-24 | 2003-07-01 | Nanya Technology Corp | Method of forming shallow trench isolation region |
| KR20040002147A (ko) * | 2002-06-29 | 2004-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
| JP2004311487A (ja) * | 2003-04-02 | 2004-11-04 | Hitachi Ltd | 半導体装置の製造方法 |
| KR100505419B1 (ko) * | 2003-04-23 | 2005-08-04 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 제조방법 |
| JP2004363486A (ja) * | 2003-06-06 | 2004-12-24 | Renesas Technology Corp | トレンチ分離を有する半導体装置およびその製造方法 |
| JP2005166700A (ja) * | 2003-11-28 | 2005-06-23 | Toshiba Corp | 半導体装置及びその製造方法 |
| KR100538811B1 (ko) * | 2003-12-29 | 2005-12-23 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| US7514336B2 (en) | 2005-12-29 | 2009-04-07 | Agere Systems Inc. | Robust shallow trench isolation structures and a method for forming shallow trench isolation structures |
-
2005
- 2005-12-29 US US11/321,206 patent/US7514336B2/en not_active Expired - Fee Related
-
2006
- 2006-09-06 EP EP06254630A patent/EP1806780A3/en not_active Withdrawn
- 2006-09-13 CN CNB2006101542012A patent/CN100501968C/zh not_active Expired - Fee Related
- 2006-12-22 JP JP2006345124A patent/JP5579358B2/ja active Active
- 2006-12-29 KR KR1020060137758A patent/KR101292025B1/ko not_active Expired - Fee Related
-
2009
- 2009-01-21 US US12/356,600 patent/US8022481B2/en not_active Expired - Fee Related
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