KR101292025B1 - 강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법 - Google Patents

강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법 Download PDF

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KR101292025B1
KR101292025B1 KR1020060137758A KR20060137758A KR101292025B1 KR 101292025 B1 KR101292025 B1 KR 101292025B1 KR 1020060137758 A KR1020060137758 A KR 1020060137758A KR 20060137758 A KR20060137758 A KR 20060137758A KR 101292025 B1 KR101292025 B1 KR 101292025B1
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dielectric material
depositing
semiconductor layer
conformal
insulating structure
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KR20070072408A (ko
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아룬 난다
네이스 로시
란비르 싱
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에이저 시스템즈 엘엘시
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
KR1020060137758A 2005-12-29 2006-12-29 강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법 Expired - Fee Related KR101292025B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/321,206 2005-12-29
US11/321,206 US7514336B2 (en) 2005-12-29 2005-12-29 Robust shallow trench isolation structures and a method for forming shallow trench isolation structures

Publications (2)

Publication Number Publication Date
KR20070072408A KR20070072408A (ko) 2007-07-04
KR101292025B1 true KR101292025B1 (ko) 2013-08-01

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KR1020060137758A Expired - Fee Related KR101292025B1 (ko) 2005-12-29 2006-12-29 강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법

Country Status (5)

Country Link
US (2) US7514336B2 (enExample)
EP (1) EP1806780A3 (enExample)
JP (1) JP5579358B2 (enExample)
KR (1) KR101292025B1 (enExample)
CN (1) CN100501968C (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7514336B2 (en) * 2005-12-29 2009-04-07 Agere Systems Inc. Robust shallow trench isolation structures and a method for forming shallow trench isolation structures
US20110244683A1 (en) * 2010-04-01 2011-10-06 Michiaki Sano Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing
CN103531519B (zh) * 2012-07-02 2016-03-23 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9768055B2 (en) * 2012-08-21 2017-09-19 Stmicroelectronics, Inc. Isolation regions for SOI devices
US10468529B2 (en) 2017-07-11 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with etch stop layer
KR102661930B1 (ko) 2018-08-13 2024-04-29 삼성전자주식회사 집적회로 소자
CN109273532B (zh) * 2018-09-12 2022-03-11 上海华力微电子有限公司 应用于高压电路防静电保护的无回滞效应硅控整流器
CN116053211A (zh) * 2022-12-30 2023-05-02 联合微电子中心有限责任公司 一种防止源漏区漏电的结构及其制备方法

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US20010015046A1 (en) * 1999-06-03 2001-08-23 Hong Sug-Hun Trench isolation method
JP2003151956A (ja) * 2001-11-19 2003-05-23 Sony Corp 半導体装置製造工程における窒化シリコン膜のエッチング方法
KR20040002147A (ko) * 2002-06-29 2004-01-07 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
KR20050067555A (ko) * 2003-12-29 2005-07-05 주식회사 하이닉스반도체 반도체 소자의 제조방법

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TW388100B (en) * 1997-02-18 2000-04-21 Hitachi Ulsi Eng Corp Semiconductor deivce and process for producing the same
US6228741B1 (en) * 1998-01-13 2001-05-08 Texas Instruments Incorporated Method for trench isolation of semiconductor devices
WO1999044223A2 (en) * 1998-02-27 1999-09-02 Lsi Logic Corporation Process of shallow trench isolating active devices to avoid sub-threshold kinks arising from corner effects without additional processing
KR100280107B1 (ko) * 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
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KR100568100B1 (ko) * 2001-03-05 2006-04-05 삼성전자주식회사 트렌치형 소자 분리막 형성 방법
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KR100505419B1 (ko) * 2003-04-23 2005-08-04 주식회사 하이닉스반도체 반도체 소자의 소자분리막 제조방법
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US7514336B2 (en) 2005-12-29 2009-04-07 Agere Systems Inc. Robust shallow trench isolation structures and a method for forming shallow trench isolation structures

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Publication number Priority date Publication date Assignee Title
US20010015046A1 (en) * 1999-06-03 2001-08-23 Hong Sug-Hun Trench isolation method
JP2003151956A (ja) * 2001-11-19 2003-05-23 Sony Corp 半導体装置製造工程における窒化シリコン膜のエッチング方法
KR20040002147A (ko) * 2002-06-29 2004-01-07 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
KR20050067555A (ko) * 2003-12-29 2005-07-05 주식회사 하이닉스반도체 반도체 소자의 제조방법

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JP5579358B2 (ja) 2014-08-27
EP1806780A2 (en) 2007-07-11
EP1806780A3 (en) 2011-06-01
KR20070072408A (ko) 2007-07-04
CN100501968C (zh) 2009-06-17
US7514336B2 (en) 2009-04-07
US20070152294A1 (en) 2007-07-05
CN1992194A (zh) 2007-07-04
JP2007184588A (ja) 2007-07-19
US8022481B2 (en) 2011-09-20
US20090127651A1 (en) 2009-05-21

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