JP2007042739A - 光電変換素子の製造方法および光電変換素子 - Google Patents
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Abstract
【解決手段】 基板と、基板上に互いに組成の異なる複数の化合物半導体層が順次積層して構成された積層体と、を含み、積層体中に少なくとも1つのpn接合部を有する光電変換素子を製造する方法であって、基板上に互いに組成の異なる複数の化合物半導体層が順次積層して構成された積層体を形成する工程と、積層体上に保護膜を形成する工程と、少なくとも積層体の一部を機械的に除去することにより溝を形成する工程と、保護膜および溝の形成後にエッチング液を用いて溝の側壁をエッチングする工程と、溝に対応する箇所を切断することによって複数の光電変換素子に分離する工程と、を含む、光電変換素子の製造方法とその方法により得られた光電変換素子である。
【選択図】 図1
Description
図1(A)〜図1(I)に、本発明の実施の形態1の光電変換素子の製造方法の模式的な断面図を示す。まず、図1(A)に示すように、基板1上に、互いに組成の異なる化合物半導体層からなるバッファ層2、ベース層3およびエミッタ層4を順次積層し、バッファ層2、ベース層3およびエミッタ層4から構成された積層体を形成する。ここで、基板1はたとえばウエハ状の形態を有しており、バッファ層2、ベース層3およびエミッタ層4はそれぞれ周知のプロセスで基板1上に形成することができる。
図2(A)および図2(B)に、本発明の実施の形態2の光電変換素子の製造方法の一部の模式的な断面図を示す。
図3(A)および図3(B)に、本発明の実施の形態3の光電変換素子の製造方法の一部の模式的な断面図を示す。
図4(A)および図4(B)に、本発明の実施の形態4の光電変換素子の製造方法の一部の模式的な断面図を示す。
Claims (11)
- 基板と、基板上に互いに組成の異なる複数の化合物半導体層が順次積層して構成された積層体と、を含み、積層体中に少なくとも1つのpn接合部を有する光電変換素子を製造する方法であって、
基板上に互いに組成の異なる複数の化合物半導体層が順次積層して構成された積層体を形成する工程と、
積層体上に保護膜を形成する工程と、
少なくとも積層体の一部を機械的に除去することにより溝を形成する工程と、
保護膜および溝の形成後にエッチング液を用いて溝の側壁をエッチングする工程と、
溝に対応する箇所を切断することによって複数の光電変換素子に分離する工程と、を含む、光電変換素子の製造方法。 - 溝の形成時において溝は最も基板側に位置しているpn接合部よりも深く形成されることを特徴とする、請求項1に記載の光電変換素子の製造方法。
- 溝の形成はダイシング、スクライビング、ドライエッチングおよびレーザスクライビングからなる群から選択された少なくとも1種によって行なわれることを特徴とする、請求項1または2に記載の光電変換素子の製造方法。
- 溝の形成時の溝幅は、複数の光電変換素子に分離する際の切断幅よりも広いことを特徴とする、請求項1から3のいずれかに記載の光電変換素子の製造方法。
- 溝の形成時において最も基板側に位置しているpn接合部における溝幅が複数の光電変換素子に分離する際の切断幅よりも広いことを特徴とする、請求項4に記載の光電変換素子の製造方法。
- 溝の断面形状が、矩形状、V字状、U字状または台形状であることを特徴とする、請求項1から5のいずれかに記載の光電変換素子の製造方法。
- 積層体を構成する化合物半導体層の少なくとも1つがGaAsおよびGaPの少なくとも一方を含むことを特徴とする、請求項1から6のいずれかに記載の光電変換素子の製造方法。
- 基板がGe、GaAsおよびGaPからなる群から選択された少なくとも1種からなることを特徴とする、請求項1から7のいずれかに記載の光電変換素子の製造方法。
- エッチング液として、アンモニアを含むアルカリ性水溶液、硫酸を含む酸性水溶液および塩酸を含む酸性水溶液からなる群から選択された少なくとも1種を用いることを特徴とする、請求項1から8のいずれかに記載の光電変換素子の製造方法。
- 請求項1から9のいずれかに記載の光電変換素子の製造方法により製造されたことを特徴とする、光電変換素子。
- 外周部に溝の側壁を有しており、溝の側壁は外周部の溝の側壁以外の部分よりも内側に位置することを特徴とする、請求項10に記載の光電変換素子。
Priority Applications (5)
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JP2005222865A JP4717545B2 (ja) | 2005-08-01 | 2005-08-01 | 光電変換素子の製造方法 |
PCT/JP2006/313825 WO2007015354A1 (ja) | 2005-08-01 | 2006-07-12 | 光電変換素子の製造方法および光電変換素子 |
EP06780995.4A EP1916718A4 (en) | 2005-08-01 | 2006-07-12 | METHOD FOR PRODUCING A PHOTOELECTRIC TRANSFORMER AND PHOTOELECTRIC CONVERTER |
US11/989,518 US20090283127A1 (en) | 2005-08-01 | 2006-07-12 | Method of Manufacturing Photoelectric Conversion Element and the Photoeletric Conversion Element |
AU2006276661A AU2006276661B2 (en) | 2005-08-01 | 2006-07-12 | Method for manufacturing photoelectric conversion element and the photoelectric conversion element |
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Cited By (5)
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JP2008227080A (ja) * | 2007-03-12 | 2008-09-25 | Sharp Corp | 集光型太陽電池の製造方法および電気特性測定装置 |
WO2010022214A1 (en) * | 2008-08-21 | 2010-02-25 | Applied Materials, Inc. | Selective etch of laser scribed solar cell substrate |
JP2010232466A (ja) * | 2009-03-27 | 2010-10-14 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP2010262975A (ja) * | 2009-04-30 | 2010-11-18 | Sharp Corp | 太陽電池セルおよびその製造方法 |
JP2011146678A (ja) * | 2009-12-16 | 2011-07-28 | Kyocera Corp | 太陽電池素子の製造方法 |
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KR101072106B1 (ko) * | 2009-10-01 | 2011-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
WO2011114761A1 (ja) * | 2010-03-18 | 2011-09-22 | 富士電機システムズ株式会社 | 薄膜太陽電池及びその製造方法 |
CN101969086B (zh) * | 2010-07-29 | 2012-11-14 | 厦门市三安光电科技有限公司 | 一种防止边缘漏电的聚光太阳电池芯片制作方法 |
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JP4862965B1 (ja) * | 2011-01-25 | 2012-01-25 | 三菱電機株式会社 | 半導体ウェハ、半導体バー、半導体ウェハの製造方法、半導体バーの製造方法、半導体素子の製造方法 |
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- 2006-07-12 AU AU2006276661A patent/AU2006276661B2/en not_active Ceased
- 2006-07-12 WO PCT/JP2006/313825 patent/WO2007015354A1/ja active Application Filing
- 2006-07-12 EP EP06780995.4A patent/EP1916718A4/en not_active Withdrawn
- 2006-07-12 US US11/989,518 patent/US20090283127A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2008227080A (ja) * | 2007-03-12 | 2008-09-25 | Sharp Corp | 集光型太陽電池の製造方法および電気特性測定装置 |
WO2010022214A1 (en) * | 2008-08-21 | 2010-02-25 | Applied Materials, Inc. | Selective etch of laser scribed solar cell substrate |
JP2010232466A (ja) * | 2009-03-27 | 2010-10-14 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP2010262975A (ja) * | 2009-04-30 | 2010-11-18 | Sharp Corp | 太陽電池セルおよびその製造方法 |
JP2011146678A (ja) * | 2009-12-16 | 2011-07-28 | Kyocera Corp | 太陽電池素子の製造方法 |
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AU2006276661B2 (en) | 2011-04-14 |
JP4717545B2 (ja) | 2011-07-06 |
AU2006276661A1 (en) | 2007-02-08 |
WO2007015354A1 (ja) | 2007-02-08 |
US20090283127A1 (en) | 2009-11-19 |
EP1916718A4 (en) | 2015-03-11 |
EP1916718A1 (en) | 2008-04-30 |
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