JP2010232466A - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP2010232466A JP2010232466A JP2009079053A JP2009079053A JP2010232466A JP 2010232466 A JP2010232466 A JP 2010232466A JP 2009079053 A JP2009079053 A JP 2009079053A JP 2009079053 A JP2009079053 A JP 2009079053A JP 2010232466 A JP2010232466 A JP 2010232466A
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- solar cell
- cell module
- suppression layer
- amorphous silicon
- substrate
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- 230000001629 suppression Effects 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 32
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 21
- 230000006798 recombination Effects 0.000 claims description 8
- 238000005215 recombination Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 4
- 239000000969 carrier Substances 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 42
- 239000010408 film Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】 この発明は、表面部材41と裏面部材42との間に太陽電池1が封止樹脂43で封止されてなる太陽電池モジュールであって、太陽電池1は、キャリア分離用電界を形成するための半導体接合部と、少数キャリアの再結合を抑制する抑制層とが設けられ、前記抑制層側が前記表面部材41側に臨んで配置されるとともに、少なくとも前記抑制層側のコーナー部分に太陽電池の法線方向と非平行な傾斜面101が形成されていることを特徴とする。
【選択図】 図5
Description
10 太陽電池モジュール
41 表面部材
42 裏面部材
100 光電変換部
101 傾斜面
110 n型単結晶シリコン基板
110c コーナー部分
112 i型非晶質シリコン層
113 p型非晶質シリコン層
114 ITO膜
116 i型非晶質シリコン層
117 n型非晶質シリコン層(抑制層)
118 ITO膜
115、119 集電極
120 配線材
Claims (4)
- 表面部材と裏面部材との間に太陽電池が封止樹脂で封止されてなる太陽電池モジュールであって、前記太陽電池は、キャリア分離用電界を形成するための半導体接合部と、少数キャリアの再結合を抑制する抑制層とが設けられ、前記抑制層側が前記表面部材側に臨んで配置されるとともに、少なくとも前記抑制層側のコーナー部分に太陽電池の法線方向と非平行な傾斜面が形成されていることを特徴とする太陽電池モジュール。
- 前記太陽電池は、一導電型単結晶シリコン基板に真性非晶質シリコン層を介して他導電型非晶質シリコン層を設けて形成した前記半導体接合部と、一導電型単結晶シリコン基板に一導電型非晶質シリコン層を設けて形成した抑制層とを備えることを特徴とする請求項1に記載の太陽電池モジュール。
- 前記傾斜面は前記基板に到達する位置まで形成されていることを特徴とする請求項2に記載の太陽電池モジュール。
- 前記傾斜面は、抑制層表面の全周に渡って形成されていることを特徴とする請求項1から請求項3のいずれか1項に記載の太陽電池モジュール。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009079053A JP5642355B2 (ja) | 2009-03-27 | 2009-03-27 | 太陽電池モジュール |
US12/730,507 US20100243026A1 (en) | 2009-03-27 | 2010-03-24 | Solar cell module and solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009079053A JP5642355B2 (ja) | 2009-03-27 | 2009-03-27 | 太陽電池モジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014087924A Division JP5909662B2 (ja) | 2014-04-22 | 2014-04-22 | 太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010232466A true JP2010232466A (ja) | 2010-10-14 |
JP5642355B2 JP5642355B2 (ja) | 2014-12-17 |
Family
ID=42782635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009079053A Expired - Fee Related JP5642355B2 (ja) | 2009-03-27 | 2009-03-27 | 太陽電池モジュール |
Country Status (2)
Country | Link |
---|---|
US (1) | US20100243026A1 (ja) |
JP (1) | JP5642355B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015064354A1 (ja) * | 2013-11-01 | 2017-03-09 | パナソニックIpマネジメント株式会社 | 太陽電池 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IN2014DN09397A (ja) * | 2012-05-09 | 2015-07-17 | World Panel Inc | |
US9088169B2 (en) | 2012-05-09 | 2015-07-21 | World Panel, Inc. | Power-conditioned solar charger for directly coupling to portable electronic devices |
CN103400873A (zh) * | 2013-08-07 | 2013-11-20 | 日芯光伏科技有限公司 | 太阳能模组箱体 |
US9984917B2 (en) * | 2014-05-21 | 2018-05-29 | Infineon Technologies Ag | Semiconductor device with an interconnect and a method for manufacturing thereof |
US9673344B2 (en) | 2014-08-07 | 2017-06-06 | Lumeta, Llc | Apparatus and method for photovoltaic module with tapered edge seal |
FR3038143B1 (fr) * | 2015-06-26 | 2017-07-21 | Commissariat Energie Atomique | Procede d'isolation des bords d'une cellule photovoltaique a heterojonction |
WO2017078164A1 (ja) * | 2015-11-04 | 2017-05-11 | 株式会社カネカ | 結晶シリコン系太陽電池の製造方法および結晶シリコン系太陽電池モジュールの製造方法 |
EP3540785B1 (en) * | 2016-11-02 | 2021-09-22 | Kaneka Corporation | Method for manufacturing a solar cell |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS553633A (en) * | 1978-06-20 | 1980-01-11 | Sharp Corp | Manufacturing semiconductor device |
JPS60227482A (ja) * | 1984-04-26 | 1985-11-12 | Toshiba Corp | 太陽電池の製造方法 |
JP2001068700A (ja) * | 1999-08-30 | 2001-03-16 | Kyocera Corp | 太陽電池の製造方法 |
JP2001148494A (ja) * | 1999-11-19 | 2001-05-29 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュール |
JP2001237448A (ja) * | 2000-02-21 | 2001-08-31 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP2007042739A (ja) * | 2005-08-01 | 2007-02-15 | Sharp Corp | 光電変換素子の製造方法および光電変換素子 |
JP2008244282A (ja) * | 2007-03-28 | 2008-10-09 | Sharp Corp | 光電変換素子およびその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4413157A (en) * | 1981-03-09 | 1983-11-01 | Ames Douglas A | Hybrid photovoltaic-thermal device |
US5094697A (en) * | 1989-06-16 | 1992-03-10 | Canon Kabushiki Kaisha | Photovoltaic device and method for producing the same |
US5356488A (en) * | 1991-12-27 | 1994-10-18 | Rudolf Hezel | Solar cell and method for its manufacture |
US5639314A (en) * | 1993-06-29 | 1997-06-17 | Sanyo Electric Co., Ltd. | Photovoltaic device including plural interconnected photoelectric cells, and method of making the same |
JP5404987B2 (ja) * | 2005-09-13 | 2014-02-05 | 三洋電機株式会社 | 太陽電池モジュール |
-
2009
- 2009-03-27 JP JP2009079053A patent/JP5642355B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-24 US US12/730,507 patent/US20100243026A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS553633A (en) * | 1978-06-20 | 1980-01-11 | Sharp Corp | Manufacturing semiconductor device |
JPS60227482A (ja) * | 1984-04-26 | 1985-11-12 | Toshiba Corp | 太陽電池の製造方法 |
JP2001068700A (ja) * | 1999-08-30 | 2001-03-16 | Kyocera Corp | 太陽電池の製造方法 |
JP2001148494A (ja) * | 1999-11-19 | 2001-05-29 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュール |
JP2001237448A (ja) * | 2000-02-21 | 2001-08-31 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP2007042739A (ja) * | 2005-08-01 | 2007-02-15 | Sharp Corp | 光電変換素子の製造方法および光電変換素子 |
JP2008244282A (ja) * | 2007-03-28 | 2008-10-09 | Sharp Corp | 光電変換素子およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015064354A1 (ja) * | 2013-11-01 | 2017-03-09 | パナソニックIpマネジメント株式会社 | 太陽電池 |
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Publication number | Publication date |
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JP5642355B2 (ja) | 2014-12-17 |
US20100243026A1 (en) | 2010-09-30 |
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