JP2006517612A5 - - Google Patents

Download PDF

Info

Publication number
JP2006517612A5
JP2006517612A5 JP2006500812A JP2006500812A JP2006517612A5 JP 2006517612 A5 JP2006517612 A5 JP 2006517612A5 JP 2006500812 A JP2006500812 A JP 2006500812A JP 2006500812 A JP2006500812 A JP 2006500812A JP 2006517612 A5 JP2006517612 A5 JP 2006517612A5
Authority
JP
Japan
Prior art keywords
metal powder
sputtering target
target assembly
powder
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006500812A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006517612A (ja
JP5006030B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2004/000270 external-priority patent/WO2004064114A2/en
Publication of JP2006517612A publication Critical patent/JP2006517612A/ja
Publication of JP2006517612A5 publication Critical patent/JP2006517612A5/ja
Application granted granted Critical
Publication of JP5006030B2 publication Critical patent/JP5006030B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006500812A 2003-01-07 2004-01-07 粉末冶金スパッタリングターゲット及びその製造方法 Expired - Fee Related JP5006030B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43846503P 2003-01-07 2003-01-07
US60/438,465 2003-01-07
PCT/US2004/000270 WO2004064114A2 (en) 2003-01-07 2004-01-07 Powder metallurgy sputtering targets and methods of producing same

Publications (3)

Publication Number Publication Date
JP2006517612A JP2006517612A (ja) 2006-07-27
JP2006517612A5 true JP2006517612A5 (https=) 2007-03-01
JP5006030B2 JP5006030B2 (ja) 2012-08-22

Family

ID=32713330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006500812A Expired - Fee Related JP5006030B2 (ja) 2003-01-07 2004-01-07 粉末冶金スパッタリングターゲット及びその製造方法

Country Status (5)

Country Link
US (3) US7067197B2 (https=)
EP (1) EP1585844B1 (https=)
JP (1) JP5006030B2 (https=)
TW (1) TWI341337B (https=)
WO (1) WO2004064114A2 (https=)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US7067197B2 (en) * 2003-01-07 2006-06-27 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
WO2005071135A2 (en) * 2004-01-08 2005-08-04 Cabot Corporation Tantalum and other metals with (110) orientation
CN101052739A (zh) * 2004-11-18 2007-10-10 霍尼韦尔国际公司 形成三维物理汽相沉积靶的方法
KR101127370B1 (ko) 2004-12-08 2012-03-29 인피니트 파워 솔루션스, 인크. ＬｉＣｏＯ２의 증착
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
JP4936511B2 (ja) * 2005-03-31 2012-05-23 富士フイルム株式会社 駆動装置、撮影装置及び携帯電話
CN100439559C (zh) * 2005-04-08 2008-12-03 光洋应用材料科技股份有限公司 钽基化合物的陶瓷溅镀靶材及其应用方法和制备方法
US8802191B2 (en) * 2005-05-05 2014-08-12 H. C. Starck Gmbh Method for coating a substrate surface and coated product
CN101368262B (zh) * 2005-05-05 2012-06-06 H.C.施塔克有限公司 向表面施加涂层的方法
US7708868B2 (en) * 2005-07-08 2010-05-04 Tosoh Smd, Inc. Variable thickness plate for forming variable wall thickness physical vapor deposition target
CN101374611B (zh) * 2006-03-07 2015-04-08 卡伯特公司 制备变形金属制品的方法
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
CN101523571A (zh) 2006-09-29 2009-09-02 无穷动力解决方案股份有限公司 柔性基板上沉积的电池层的掩模和材料限制
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
AU2007317650B2 (en) * 2006-11-07 2012-06-14 H.C. Starck Surface Technology and Ceramic Powders GmbH Method for coating a substrate and coated product
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US20080210555A1 (en) * 2007-03-01 2008-09-04 Heraeus Inc. High density ceramic and cermet sputtering targets by microwave sintering
US20080233420A1 (en) * 2007-03-23 2008-09-25 Mccracken Colin G Production of high-purity tantalum flake powder
US20080229880A1 (en) * 2007-03-23 2008-09-25 Reading Alloys, Inc. Production of high-purity tantalum flake powder
US8197894B2 (en) * 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
EP2185300B1 (en) * 2007-08-06 2018-10-24 H. C. Starck, Inc. Refractory metal plates with improved uniformity of texture
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
EP2225406A4 (en) 2007-12-21 2012-12-05 Infinite Power Solutions Inc PROCEDURE FOR SPUTTER TARGETS FOR ELECTROLYTE FILMS
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
JP5705549B2 (ja) 2008-01-11 2015-04-22 インフィニット パワー ソリューションズ， インコーポレイテッド 薄膜電池および他のデバイスのための薄膜カプセル化
DE102008064648A1 (de) * 2008-01-23 2010-05-20 Tradium Gmbh Reaktionsgefäß zur Herstellung von Metallpulvern
ES2302663B2 (es) * 2008-02-28 2009-02-16 Universidad Politecnica De Madrid Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia.
JP5595377B2 (ja) 2008-04-02 2014-09-24 インフィニット パワー ソリューションズ， インコーポレイテッド エネルギー取入れに関連したエネルギー貯蔵デバイスに対する受動的過不足電圧の制御および保護
JP5172465B2 (ja) 2008-05-20 2013-03-27 三菱電機株式会社 放電表面処理用電極の製造方法および放電表面処理用電極
WO2010019577A1 (en) 2008-08-11 2010-02-18 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
WO2010030743A1 (en) 2008-09-12 2010-03-18 Infinite Power Solutions, Inc. Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
US8508193B2 (en) 2008-10-08 2013-08-13 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
US8599572B2 (en) 2009-09-01 2013-12-03 Infinite Power Solutions, Inc. Printed circuit board with integrated thin film battery
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
KR20130037215A (ko) * 2010-08-09 2013-04-15 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃
JP5912559B2 (ja) 2011-03-30 2016-04-27 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲットの製造方法
JP5758204B2 (ja) * 2011-06-07 2015-08-05 日本発條株式会社 チタン合金部材およびその製造方法
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
TWI515316B (zh) 2012-01-13 2016-01-01 田中貴金屬工業股份有限公司 FePt sputtering target and its manufacturing method
CN103084567B (zh) * 2012-11-25 2015-06-24 安徽普源分离机械制造有限公司 一种膜片阀阀杆的粉末冶金制备方法
WO2015157421A1 (en) * 2014-04-11 2015-10-15 H.C. Starck Inc. High purity refractory metal sputtering targets which have a uniform random texture manufactured by hot isostatic pressing high purity refractory metal powders
WO2016190159A1 (ja) * 2015-05-22 2016-12-01 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
KR20180055907A (ko) * 2016-03-25 2018-05-25 제이엑스금속주식회사 Ti-Ta 합금 스퍼터링 타깃 및 그 제조 방법
CN106111993B (zh) * 2016-07-28 2018-05-04 西北有色金属研究院 一种粉末冶金法制备铌合金板材的方法
WO2018197612A1 (en) 2017-04-27 2018-11-01 Basf Se Preparation of powders of nitrided inorganic materials
GB201803142D0 (en) 2018-02-27 2018-04-11 Rolls Royce Plc A method of manufacturing an austenitc iron alloy
KR102389784B1 (ko) 2018-03-05 2022-04-22 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. 구형 분말을 함유하는 애노드 및 커패시터
IL277122B2 (en) 2018-03-05 2025-09-01 Global Advanced Metals Usa Inc Spherical tantalum powder, products containing it, and methods for producing it
SG11202008465YA (en) * 2018-03-05 2020-09-29 Global Advanced Metals Usa Inc Powder metallurgy sputtering targets and methods of producing same
RU2680082C1 (ru) * 2018-05-31 2019-02-15 Федеральное государственное бюджетное учреждение науки Федеральный исследовательский центр "Кольский научный центр Российской академии наук" (ФИЦ КНЦ РАН) Способ изготовления анода конденсатора на основе вентильного металла
US11289276B2 (en) 2018-10-30 2022-03-29 Global Advanced Metals Japan K.K. Porous metal foil and capacitor anodes made therefrom and methods of making same
CN113574203A (zh) 2019-03-26 2021-10-29 Ｊｘ金属株式会社 铌溅射靶
US11725270B2 (en) 2020-01-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target design and semiconductor devices formed using the same
CN111621753B (zh) * 2020-07-29 2020-11-17 江苏集萃先进金属材料研究所有限公司 靶材坯料及其制作方法
CN113981390A (zh) * 2021-10-29 2022-01-28 宁波江丰半导体科技有限公司 一种高纯低氧钽靶材的制备方法
WO2025006859A1 (en) * 2023-06-29 2025-01-02 Materion Corporation Metals and metal alloys for sputtering targets
TW202544262A (zh) * 2023-12-15 2025-11-16 美商萬騰榮公司 耐火金屬板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2020131A6 (es) * 1989-06-26 1991-07-16 Cabot Corp Procedimiento para la produccion de polvos de tantalo, niobio y sus aleaciones.
US5242481A (en) 1989-06-26 1993-09-07 Cabot Corporation Method of making powders and products of tantalum and niobium
EP0534441B1 (en) * 1991-09-27 1997-12-10 Hitachi Metals, Ltd. Target for reactive sputtering and film-forming method using the target
US5415829A (en) 1992-12-28 1995-05-16 Nikko Kyodo Co., Ltd. Sputtering target
EP0665302B1 (en) 1994-01-26 2000-05-03 H.C. Starck, INC. Nitriding tantalum powder
US5863398A (en) 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
JP4012287B2 (ja) 1997-08-27 2007-11-21 株式会社ブリヂストン スパッタリングターゲット盤
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP5053471B2 (ja) 1999-05-11 2012-10-17 株式会社東芝 配線膜の製造方法と電子部品の製造方法
JP2001020065A (ja) 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6261337B1 (en) 1999-08-19 2001-07-17 Prabhat Kumar Low oxygen refractory metal powder for powder metallurgy
US6521173B2 (en) 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
US6342133B2 (en) * 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
DE60136351D1 (de) 2000-05-22 2008-12-11 Cabot Corp Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
US7067197B2 (en) 2003-01-07 2006-06-27 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same

Similar Documents

Publication Publication Date Title
JP2006517612A5 (https=)
JP5006030B2 (ja) 粉末冶金スパッタリングターゲット及びその製造方法
US6599466B1 (en) Manufacture of lightweight metal matrix composites with controlled structure
JP3084402B1 (ja) ＡｌＴｉ系合金スパッタリングターゲット及び耐摩耗性ＡｌＴｉ系合金硬質皮膜並びに同皮膜の形成方法
TWI378148B (en) Methodology for recycling ru and ru-alloy deposition targets & targets made of recycled ru and ru-based alloy powders
UA99445C2 (ru) Способ получения порошка титана (варианты) и порошок титана, изготовленный данным способом
WO1997017479A1 (en) Surface-hardened titanium material, surface hardening method of titanium material, watchcase decoration article, and decoration article
TW200613054A (en) Robust spray-dried ziegler-natta procatalyst and polymerization process employing same
WO2005071135A3 (en) Tantalum and other metals with (110) orientation
JP6993646B2 (ja) 鋳鉄用接種剤
JP5389474B2 (ja) 硬質被膜を有する球状化黒鉛鋳鉄材、プレス用金型、及び硬質被膜を有する球状化黒鉛鋳鉄材の製造方法
TW201127521A (en) Method of preparing iron-based components
JP2006124836A5 (https=)
NO20054942L (no) Finkornet niobark oppnadd ved blokk-metallurgi
JPH09104939A (ja) 高硬度金属工具、ことに切削工具に使用される高硬度合金用のコバルトバインダー金属合金およびこの合金を含有する高硬度金属工具
JP2003193111A (ja) スパッタリング用タングステンターゲットの製造方法
FR2469970A1 (fr) Alliage metallique en poudre, fritte, de densite elevee et son procede de production
JP2824507B2 (ja) チタン‐アルミニウム系金属間化合物粉末の製造方法
JPH09202901A (ja) ＴｉＮｉ系合金焼結体の製造方法
JPS5891140A (ja) 高力金属合金材料及びその形成方法
JP2909108B2 (ja) ターゲット部材およびその製造方法
JP2819648B2 (ja) 耐摩工具用被覆超硬合金
TWI357931B (https=)
JP2006131952A (ja) Ｆｅ−Ｔｉ焼結合金の製造方法
CN108859317A (zh) 一种高硬度合金材料