JP2006513572A5 - - Google Patents

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Publication number
JP2006513572A5
JP2006513572A5 JP2004566580A JP2004566580A JP2006513572A5 JP 2006513572 A5 JP2006513572 A5 JP 2006513572A5 JP 2004566580 A JP2004566580 A JP 2004566580A JP 2004566580 A JP2004566580 A JP 2004566580A JP 2006513572 A5 JP2006513572 A5 JP 2006513572A5
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JP
Japan
Prior art keywords
layer structure
epitaxial layer
iii
emosfet
semiconductor substrate
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Pending
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JP2004566580A
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English (en)
Japanese (ja)
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JP2006513572A (ja
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Priority claimed from US10/339,379 external-priority patent/US6963090B2/en
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Publication of JP2006513572A publication Critical patent/JP2006513572A/ja
Publication of JP2006513572A5 publication Critical patent/JP2006513572A5/ja
Pending legal-status Critical Current

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JP2004566580A 2003-01-09 2003-12-18 エンハンスメントモード金属酸化膜半導体電界効果トランジスタ及びその形成方法 Pending JP2006513572A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/339,379 US6963090B2 (en) 2003-01-09 2003-01-09 Enhancement mode metal-oxide-semiconductor field effect transistor
PCT/US2003/040680 WO2004064172A2 (en) 2003-01-09 2003-12-18 An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same

Publications (2)

Publication Number Publication Date
JP2006513572A JP2006513572A (ja) 2006-04-20
JP2006513572A5 true JP2006513572A5 (enExample) 2007-02-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004566580A Pending JP2006513572A (ja) 2003-01-09 2003-12-18 エンハンスメントモード金属酸化膜半導体電界効果トランジスタ及びその形成方法

Country Status (6)

Country Link
US (1) US6963090B2 (enExample)
EP (1) EP1586119A2 (enExample)
JP (1) JP2006513572A (enExample)
AU (1) AU2003301146A1 (enExample)
TW (1) TWI333260B (enExample)
WO (1) WO2004064172A2 (enExample)

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