AU2003301146A1 - An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same - Google Patents

An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same

Info

Publication number
AU2003301146A1
AU2003301146A1 AU2003301146A AU2003301146A AU2003301146A1 AU 2003301146 A1 AU2003301146 A1 AU 2003301146A1 AU 2003301146 A AU2003301146 A AU 2003301146A AU 2003301146 A AU2003301146 A AU 2003301146A AU 2003301146 A1 AU2003301146 A1 AU 2003301146A1
Authority
AU
Australia
Prior art keywords
oxide
forming
field effect
same
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003301146A
Other languages
English (en)
Other versions
AU2003301146A8 (en
Inventor
Olin L. Hartin
Nicholas Medendorp
Matthias Passlack
Marcus Ray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003301146A8 publication Critical patent/AU2003301146A8/xx
Publication of AU2003301146A1 publication Critical patent/AU2003301146A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4735—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having delta-doped or planar-doped donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4738—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
AU2003301146A 2003-01-09 2003-12-18 An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same Abandoned AU2003301146A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/339,379 2003-01-09
US10/339,379 US6963090B2 (en) 2003-01-09 2003-01-09 Enhancement mode metal-oxide-semiconductor field effect transistor
PCT/US2003/040680 WO2004064172A2 (en) 2003-01-09 2003-12-18 An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same

Publications (2)

Publication Number Publication Date
AU2003301146A8 AU2003301146A8 (en) 2004-08-10
AU2003301146A1 true AU2003301146A1 (en) 2004-08-10

Family

ID=32711091

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003301146A Abandoned AU2003301146A1 (en) 2003-01-09 2003-12-18 An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same

Country Status (6)

Country Link
US (1) US6963090B2 (enExample)
EP (1) EP1586119A2 (enExample)
JP (1) JP2006513572A (enExample)
AU (1) AU2003301146A1 (enExample)
TW (1) TWI333260B (enExample)
WO (1) WO2004064172A2 (enExample)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4601263B2 (ja) * 2003-04-25 2010-12-22 三菱電機株式会社 電界効果トランジスタ
US7119381B2 (en) * 2004-07-30 2006-10-10 Freescale Semiconductor, Inc. Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices
US20060102931A1 (en) * 2004-11-17 2006-05-18 Thomas Edward Kopley Field effect transistor having a carrier exclusion layer
US7548112B2 (en) * 2005-07-21 2009-06-16 Cree, Inc. Switch mode power amplifier using MIS-HEMT with field plate extension
US7432565B2 (en) * 2005-09-27 2008-10-07 Freescale Semiconductor, Inc. III-V compound semiconductor heterostructure MOSFET device
US20070090405A1 (en) * 2005-09-27 2007-04-26 Matthias Passlack Charge compensated dielectric layer structure and method of making the same
US7429506B2 (en) * 2005-09-27 2008-09-30 Freescale Semiconductor, Inc. Process of making a III-V compound semiconductor heterostructure MOSFET
TW200830550A (en) * 2006-08-18 2008-07-16 Univ California High breakdown enhancement mode gallium nitride based high electron mobility transistors with integrated slant field plate
US7682912B2 (en) 2006-10-31 2010-03-23 Freescale Semiconductor, Inc. III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same
US9209246B2 (en) 2007-04-12 2015-12-08 The Penn State University Accumulation field effect microelectronic device and process for the formation thereof
WO2008128164A1 (en) * 2007-04-12 2008-10-23 The Penn State Research Foundation Accumulation field effect microelectronic device and process for the formation thereof
US7799647B2 (en) * 2007-07-31 2010-09-21 Freescale Semiconductor, Inc. MOSFET device featuring a superlattice barrier layer and method
US7692224B2 (en) * 2007-09-28 2010-04-06 Freescale Semiconductor, Inc. MOSFET structure and method of manufacture
JP5595685B2 (ja) * 2009-07-28 2014-09-24 パナソニック株式会社 半導体装置
WO2011027577A1 (ja) 2009-09-07 2011-03-10 住友化学株式会社 電界効果トランジスタ、半導体基板、電界効果トランジスタの製造方法及び半導体基板の製造方法
US20110068348A1 (en) * 2009-09-18 2011-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Thin body mosfet with conducting surface channel extensions and gate-controlled channel sidewalls
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8304301B2 (en) * 2009-11-18 2012-11-06 International Business Machines Corporation Implant free extremely thin semiconductor devices
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US9490179B2 (en) * 2010-05-21 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
KR20130092548A (ko) 2010-08-31 2013-08-20 스미또모 가가꾸 가부시키가이샤 반도체 기판, 절연 게이트형 전계 효과 트랜지스터 및 반도체 기판의 제조 방법
CN103098188B (zh) 2010-08-31 2016-03-30 住友化学株式会社 半导体基板及绝缘栅极型场效电子晶体管
US8377783B2 (en) 2010-09-30 2013-02-19 Suvolta, Inc. Method for reducing punch-through in a transistor device
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
JP2012195579A (ja) 2011-03-02 2012-10-11 Sumitomo Chemical Co Ltd 半導体基板、電界効果トランジスタ、半導体基板の製造方法および電界効果トランジスタの製造方法
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US8400219B2 (en) 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US8803242B2 (en) * 2011-09-19 2014-08-12 Eta Semiconductor Inc. High mobility enhancement mode FET
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
CN102509702A (zh) * 2011-12-28 2012-06-20 上海贝岭股份有限公司 一种用于平面型功率mosfet的外延制作方法
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
US9112057B1 (en) 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
US9431068B2 (en) 2012-10-31 2016-08-30 Mie Fujitsu Semiconductor Limited Dynamic random access memory (DRAM) with low variation transistor peripheral circuits
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US8994415B1 (en) 2013-03-01 2015-03-31 Suvolta, Inc. Multiple VDD clock buffer
US8988153B1 (en) 2013-03-09 2015-03-24 Suvolta, Inc. Ring oscillator with NMOS or PMOS variation insensitivity
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
US9449967B1 (en) 2013-03-15 2016-09-20 Fujitsu Semiconductor Limited Transistor array structure
US9112495B1 (en) 2013-03-15 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit device body bias circuits and methods
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US8976575B1 (en) 2013-08-29 2015-03-10 Suvolta, Inc. SRAM performance monitor
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
US20190145926A1 (en) * 2016-04-29 2019-05-16 Stc. Unm Wafer level gate modulation enhanced detectors
US10872772B2 (en) 2018-10-31 2020-12-22 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and method of manufacture

Family Cites Families (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US21855A (en) * 1858-10-19 Umbrella
US179000A (en) * 1876-06-20 Improvement in devices for multiplying motion
US526265A (en) * 1894-09-18 de rossetti
US438612A (en) * 1890-10-21 dins-moee
US3617951A (en) 1968-11-21 1971-11-02 Western Microwave Lab Inc Broadband circulator or isolator of the strip line or microstrip type
US3758199A (en) 1971-11-22 1973-09-11 Sperry Rand Corp Piezoelectrically actuated light deflector
US3818451A (en) 1972-03-15 1974-06-18 Motorola Inc Light-emitting and light-receiving logic array
NL7710164A (nl) 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
US4174504A (en) 1978-01-25 1979-11-13 United Technologies Corporation Apparatus and method for cavity dumping a Q-switched laser
FR2453423A1 (fr) 1979-04-04 1980-10-31 Quantel Sa Element optique epais a courbure variable
JPS5696834A (en) 1979-12-28 1981-08-05 Mitsubishi Monsanto Chem Co Compound semiconductor epitaxial wafer and manufacture thereof
GB2096785B (en) 1981-04-09 1984-10-10 Standard Telephones Cables Ltd Integrated optic device
US4626878A (en) 1981-12-11 1986-12-02 Sanyo Electric Co., Ltd. Semiconductor optical logical device
US4525871A (en) 1982-02-03 1985-06-25 Massachusetts Institute Of Technology High speed optoelectronic mixer
US5268327A (en) 1984-04-27 1993-12-07 Advanced Energy Fund Limited Partnership Epitaxial compositions
US4695120A (en) 1985-09-26 1987-09-22 The United States Of America As Represented By The Secretary Of The Army Optic-coupled integrated circuits
US5140387A (en) 1985-11-08 1992-08-18 Lockheed Missiles & Space Company, Inc. Semiconductor device in which gate region is precisely aligned with source and drain regions
US4804866A (en) 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4866489A (en) 1986-07-22 1989-09-12 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US4723321A (en) 1986-11-07 1988-02-02 American Telephone And Telegraph Company, At&T Bell Laboratories Techniques for cross-polarization cancellation in a space diversity radio system
JPH07120835B2 (ja) 1986-12-26 1995-12-20 松下電器産業株式会社 光集積回路
KR880010509A (ko) 1987-02-11 1988-10-10 오레그 이. 앨버 전계효과 트랜지스터
US4801184A (en) 1987-06-15 1989-01-31 Eastman Kodak Company Integrated optical read/write head and apparatus incorporating same
FI81926C (fi) 1987-09-29 1990-12-10 Nokia Oy Ab Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater.
US5238869A (en) 1988-07-25 1993-08-24 Texas Instruments Incorporated Method of forming an epitaxial layer on a heterointerface
JP2770340B2 (ja) 1988-09-06 1998-07-02 ソニー株式会社 半導体装置、絶縁ゲート型電界効果トランジスタ及びショットキーゲート型電界効果トランジスタ
US5087829A (en) 1988-12-07 1992-02-11 Hitachi, Ltd. High speed clock distribution system
US5028563A (en) 1989-02-24 1991-07-02 Laser Photonics, Inc. Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays
US5237233A (en) 1989-03-03 1993-08-17 E. F. Johnson Company Optoelectronic active circuit element
GB2230395B (en) 1989-03-15 1992-09-30 Matsushita Electric Works Ltd Semiconductor relay circuit
US5997638A (en) 1990-03-23 1999-12-07 International Business Machines Corporation Localized lattice-mismatch-accomodation dislocation network epitaxy
US5362972A (en) 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
US5188976A (en) 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
US5585288A (en) 1990-07-16 1996-12-17 Raytheon Company Digital MMIC/analog MMIC structures and process
US5248631A (en) 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
JP3028840B2 (ja) 1990-09-19 2000-04-04 株式会社日立製作所 バイポーラトランジスタとｍｏｓトランジスタの複合回路、及びそれを用いた半導体集積回路装置
FR2670050B1 (fr) 1990-11-09 1997-03-14 Thomson Csf Detecteur optoelectronique a semiconducteurs.
US5216359A (en) 1991-01-18 1993-06-01 University Of North Carolina Electro-optical method and apparatus for testing integrated circuits
US5387811A (en) 1991-01-25 1995-02-07 Nec Corporation Composite semiconductor device with a particular bipolar structure
US5166761A (en) 1991-04-01 1992-11-24 Midwest Research Institute Tunnel junction multiple wavelength light-emitting diodes
US5523879A (en) 1991-04-26 1996-06-04 Fuji Xerox Co., Ltd. Optical link amplifier and a wavelength multiplex laser oscillator
JPH07187892A (ja) 1991-06-28 1995-07-25 Internatl Business Mach Corp <Ibm> シリコン及びその形成方法
US5148504A (en) 1991-10-16 1992-09-15 At&T Bell Laboratories Optical integrated circuit designed to operate by use of photons
US5404373A (en) 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
CA2088701C (en) 1992-02-05 1998-01-27 Yoshio Yoshida Optical information reproducing apparatus
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
US5238877A (en) 1992-04-30 1993-08-24 The United States Of America As Represented By The Secretary Of The Navy Conformal method of fabricating an optical waveguide on a semiconductor substrate
US5585167A (en) 1992-05-18 1996-12-17 Matsushita Electric Industrial Co., Ltd. Thin-film conductor and method of fabricating the same
US5365477A (en) 1992-06-16 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Dynamic random access memory device
US5262659A (en) 1992-08-12 1993-11-16 United Technologies Corporation Nyquist frequency bandwidth hact memory
JPH0667046A (ja) 1992-08-21 1994-03-11 Sharp Corp 光集積回路
US5642371A (en) 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus
US5315128A (en) 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity
US5578162A (en) 1993-06-25 1996-11-26 Lucent Technologies Inc. Integrated composite semiconductor devices and method for manufacture thereof
DE4323821A1 (de) 1993-07-15 1995-01-19 Siemens Ag Pyrodetektorelement mit orientiert aufgewachsener pyroelektrischer Schicht und Verfahren zu seiner Herstellung
US5693140A (en) 1993-07-30 1997-12-02 Lockheed Martin Energy Systems, Inc. Process for growing a film epitaxially upon a MgO surface
US5371621A (en) 1993-08-23 1994-12-06 Unisys Corporation Self-routing multi-stage photonic interconnect
JPH07114746A (ja) 1993-08-25 1995-05-02 Sony Corp 光学装置
JPH0766366A (ja) 1993-08-26 1995-03-10 Hitachi Ltd 半導体積層構造体およびそれを用いた半導体装置
JP3644980B2 (ja) 1993-09-06 2005-05-11 株式会社ルネサステクノロジ 半導体装置の製造方法
EP1178530A2 (en) 1993-09-30 2002-02-06 Kopin Corporation Three-dimensional processor using transferred thin film circuits
JPH07133192A (ja) 1993-11-04 1995-05-23 Sumitomo Electric Ind Ltd 成膜装置および成膜方法
JPH07253519A (ja) 1994-03-16 1995-10-03 Fujitsu Ltd 光接続装置
US6271069B1 (en) * 1994-03-23 2001-08-07 Agere Systems Guardian Corp. Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
US5436181A (en) 1994-04-18 1995-07-25 Texas Instruments Incorporated Method of self aligning an emitter contact in a heterojunction bipolar transistor
US6064783A (en) 1994-05-25 2000-05-16 Congdon; Philip A. Integrated laser and coupled waveguide
US5559368A (en) 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5754714A (en) 1994-09-17 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor optical waveguide device, optical control type optical switch, and wavelength conversion device
US5635453A (en) 1994-12-23 1997-06-03 Neocera, Inc. Superconducting thin film system using a garnet substrate
US5772758A (en) 1994-12-29 1998-06-30 California Institute Of Technology Near real-time extraction of deposition and pre-deposition characteristics from rotating substrates and control of a deposition apparatus in near real-time
US5574589A (en) 1995-01-09 1996-11-12 Lucent Technologies Inc. Self-amplified networks
US5563428A (en) 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
US5574744A (en) 1995-02-03 1996-11-12 Motorola Optical coupler
JP3557011B2 (ja) 1995-03-30 2004-08-25 株式会社東芝 半導体発光素子、及びその製造方法
US5919522A (en) 1995-03-31 1999-07-06 Advanced Technology Materials, Inc. Growth of BaSrTiO3 using polyamine-based precursors
US6140746A (en) 1995-04-03 2000-10-31 Seiko Epson Corporation Piezoelectric thin film, method for producing the same, and ink jet recording head using the thin film
US5528209A (en) 1995-04-27 1996-06-18 Hughes Aircraft Company Monolithic microwave integrated circuit and method
US5753934A (en) 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
US5760740A (en) 1995-08-08 1998-06-02 Lucent Technologies, Inc. Apparatus and method for electronic polarization correction
JP3137880B2 (ja) 1995-08-25 2001-02-26 ティーディーケイ株式会社 強誘電体薄膜、電子デバイスおよび強誘電体薄膜の製造方法
US5905571A (en) 1995-08-30 1999-05-18 Sandia Corporation Optical apparatus for forming correlation spectrometers and optical processors
DE19536753C1 (de) * 1995-10-02 1997-02-20 El Mos Elektronik In Mos Techn MOS-Transistor mit hoher Ausgangsspannungsfestigkeit
US5787175A (en) 1995-10-23 1998-07-28 Novell, Inc. Method and apparatus for collaborative document control
JP3435966B2 (ja) 1996-03-13 2003-08-11 株式会社日立製作所 強誘電体素子とその製造方法
JP3258899B2 (ja) 1996-03-19 2002-02-18 シャープ株式会社 強誘電体薄膜素子、それを用いた半導体装置、及び強誘電体薄膜素子の製造方法
US5729566A (en) 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
JP3082671B2 (ja) 1996-06-26 2000-08-28 日本電気株式会社 トランジスタ素子及びその製造方法
US5985404A (en) 1996-08-28 1999-11-16 Tdk Corporation Recording medium, method of making, and information processing apparatus
JP4114709B2 (ja) 1996-09-05 2008-07-09 株式会社神戸製鋼所 ダイヤモンド膜の形成方法
US5838053A (en) 1996-09-19 1998-11-17 Raytheon Ti Systems, Inc. Method of forming a cadmium telluride/silicon structure
EP1199173B1 (en) 1996-10-29 2009-04-29 Panasonic Corporation Ink jet recording apparatus and its manufacturing method
US5719417A (en) 1996-11-27 1998-02-17 Advanced Technology Materials, Inc. Ferroelectric integrated circuit structure
KR100571071B1 (ko) 1996-12-04 2006-06-21 소니 가부시끼 가이샤 전계효과트랜지스터및그제조방법
JPH10223901A (ja) * 1996-12-04 1998-08-21 Sony Corp 電界効果型トランジスタおよびその製造方法
GB2321114B (en) 1997-01-10 2001-02-21 Lasor Ltd An optical modulator
JP3414227B2 (ja) 1997-01-24 2003-06-09 セイコーエプソン株式会社 インクジェット式記録ヘッド
US5937115A (en) 1997-02-12 1999-08-10 Foster-Miller, Inc. Switchable optical components/structures and methods for the fabrication thereof
JP3734586B2 (ja) 1997-03-05 2006-01-11 富士通株式会社 半導体装置及びその製造方法
US6022671A (en) 1997-03-11 2000-02-08 Lightwave Microsystems Corporation Method of making optical interconnects with hybrid construction
JPH10265948A (ja) 1997-03-25 1998-10-06 Rohm Co Ltd 半導体装置用基板およびその製法
CN1131548C (zh) 1997-04-04 2003-12-17 松下电器产业株式会社 半导体装置
US5998781A (en) 1997-04-30 1999-12-07 Sandia Corporation Apparatus for millimeter-wave signal generation
US5906951A (en) 1997-04-30 1999-05-25 International Business Machines Corporation Strained Si/SiGe layers on insulator
US5831960A (en) 1997-07-17 1998-11-03 Motorola, Inc. Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication
US6013553A (en) 1997-07-24 2000-01-11 Texas Instruments Incorporated Zirconium and/or hafnium oxynitride gate dielectric
US6204525B1 (en) 1997-09-22 2001-03-20 Murata Manufacturing Co., Ltd. Ferroelectric thin film device and method of producing the same
US6233435B1 (en) 1997-10-14 2001-05-15 Telecommunications Equipment Corporation Multi-function interactive communications system with circularly/elliptically polarized signal transmission and reception
US6181920B1 (en) 1997-10-20 2001-01-30 Ericsson Inc. Transmitter that selectively polarizes a radio wave
US5987196A (en) 1997-11-06 1999-11-16 Micron Technology, Inc. Semiconductor structure having an optical signal path in a substrate and method for forming the same
JP4204108B2 (ja) 1997-11-06 2009-01-07 エピフォトニクス株式会社 光導波路素子およびその製造方法
US6376337B1 (en) 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
US6140696A (en) 1998-01-27 2000-10-31 Micron Technology, Inc. Vertically mountable semiconductor device and methods
US5945718A (en) * 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6110840A (en) 1998-02-17 2000-08-29 Motorola, Inc. Method of passivating the surface of a Si substrate
US6051874A (en) 1998-04-01 2000-04-18 Citizen Watch Co., Ltd. Diode formed in a surface silicon layer on an SOI substrate
JP2000022128A (ja) 1998-07-06 2000-01-21 Murata Mfg Co Ltd 半導体発光素子、および光電子集積回路素子
JP3450713B2 (ja) 1998-07-21 2003-09-29 富士通カンタムデバイス株式会社 半導体装置およびその製造方法、マイクロストリップ線路の製造方法
US6392253B1 (en) 1998-08-10 2002-05-21 Arjun J. Saxena Semiconductor device with single crystal films grown on arrayed nucleation sites on amorphous and/or non-single crystal surfaces
US6159781A (en) * 1998-10-01 2000-12-12 Chartered Semiconductor Manufacturing, Ltd. Way to fabricate the self-aligned T-shape gate to reduce gate resistivity
JP3408762B2 (ja) 1998-12-03 2003-05-19 シャープ株式会社 Ｓｏｉ構造の半導体装置及びその製造方法
JP2000278085A (ja) 1999-03-24 2000-10-06 Yamaha Corp 弾性表面波素子
JP2001138529A (ja) 1999-03-25 2001-05-22 Seiko Epson Corp 圧電体の製造方法
US6862528B2 (en) * 1999-04-27 2005-03-01 Usengineering Solutions Corporation Monitoring system and process for structural instabilities due to environmental processes
US6326667B1 (en) 1999-09-09 2001-12-04 Kabushiki Kaisha Toshiba Semiconductor devices and methods for producing semiconductor devices
JP2001102676A (ja) 1999-09-27 2001-04-13 Toshiba Electronic Engineering Corp 光集積ユニット、光ピックアップ及び光記録媒体駆動装置
US6362558B1 (en) 1999-12-24 2002-03-26 Kansai Research Institute Piezoelectric element, process for producing the same and ink jet recording head
KR100430751B1 (ko) 2000-02-23 2004-05-10 주식회사 세라콤 페로브스카이트형 구조 산화물의 단결정 성장 방법
US6445724B2 (en) 2000-02-23 2002-09-03 Sarnoff Corporation Master oscillator vertical emission laser
US6731585B2 (en) 2000-03-03 2004-05-04 Matsushita Electric Industrial Co., Ltd. Optical pick-up head with semiconductor laser
JP2001251283A (ja) 2000-03-06 2001-09-14 Hitachi Ltd インターフェース回路
US6415140B1 (en) 2000-04-28 2002-07-02 Bae Systems Aerospace Inc. Null elimination in a space diversity antenna system
US6521996B1 (en) 2000-06-30 2003-02-18 Intel Corporation Ball limiting metallurgy for input/outputs and methods of fabrication
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6661940B2 (en) 2000-07-21 2003-12-09 Finisar Corporation Apparatus and method for rebroadcasting signals in an optical backplane bus system
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
KR100360413B1 (ko) 2000-12-19 2002-11-13 삼성전자 주식회사 2단계 열처리에 의한 반도체 메모리 소자의 커패시터 제조방법
US6524651B2 (en) 2001-01-26 2003-02-25 Battelle Memorial Institute Oxidized film structure and method of making epitaxial metal oxide structure
US6528374B2 (en) 2001-02-05 2003-03-04 International Business Machines Corporation Method for forming dielectric stack without interfacial layer
US6297598B1 (en) 2001-02-20 2001-10-02 Harvatek Corp. Single-side mounted light emitting diode module
JP2002324813A (ja) * 2001-02-21 2002-11-08 Nippon Telegr & Teleph Corp <Ntt> ヘテロ構造電界効果トランジスタ
JP2002299603A (ja) * 2001-03-29 2002-10-11 Nec Corp 半導体装置
US20020140012A1 (en) 2001-03-30 2002-10-03 Motorola, Inc. Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same
US20020195610A1 (en) 2001-06-20 2002-12-26 Motorola, Inc. Structure and method for fabricating a semiconductor device with a side interconnect
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
JP3673231B2 (ja) * 2002-03-07 2005-07-20 三菱電機株式会社 絶縁ゲート型半導体装置及びゲート配線構造の製造方法

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