JP2006513325A5 - - Google Patents
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- Publication number
- JP2006513325A5 JP2006513325A5 JP2004567443A JP2004567443A JP2006513325A5 JP 2006513325 A5 JP2006513325 A5 JP 2006513325A5 JP 2004567443 A JP2004567443 A JP 2004567443A JP 2004567443 A JP2004567443 A JP 2004567443A JP 2006513325 A5 JP2006513325 A5 JP 2006513325A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- material layer
- metal
- depositing
- catalytic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 25
- 238000000034 method Methods 0.000 claims 14
- 238000000151 deposition Methods 0.000 claims 12
- 230000003197 catalytic effect Effects 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 230000008021 deposition Effects 0.000 claims 7
- 239000002243 precursor Substances 0.000 claims 7
- 239000007789 gas Substances 0.000 claims 6
- 239000003054 catalyst Substances 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10302644A DE10302644B3 (de) | 2003-01-23 | 2003-01-23 | Verfahren zur Herstellung einer Metallschicht über einem strukturierten Dielektrikum mittels stromloser Abscheidung unter Verwendung eines Katalysators |
| DE10302644.4 | 2003-01-23 | ||
| US10/602,192 | 2003-06-24 | ||
| US10/602,192 US6951816B2 (en) | 2003-01-23 | 2003-06-24 | Method of forming a metal layer over patterned dielectric by electroless deposition using a catalyst |
| PCT/US2003/041185 WO2004068576A2 (en) | 2003-01-23 | 2003-12-22 | Method of forming a catalyst containing layer over a patterned dielectric |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006513325A JP2006513325A (ja) | 2006-04-20 |
| JP2006513325A5 true JP2006513325A5 (enExample) | 2009-01-15 |
| JP5214092B2 JP5214092B2 (ja) | 2013-06-19 |
Family
ID=32826166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004567443A Expired - Lifetime JP5214092B2 (ja) | 2003-01-23 | 2003-12-22 | 触媒を用いた無電解めっきによりパターン化された絶縁体上に金属層を形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5214092B2 (enExample) |
| KR (1) | KR101098568B1 (enExample) |
| AU (1) | AU2003299875A1 (enExample) |
| GB (1) | GB2417132B (enExample) |
| WO (1) | WO2004068576A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943106B1 (en) * | 2004-02-20 | 2005-09-13 | Micron Technology, Inc. | Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling |
| JP2006128288A (ja) * | 2004-10-27 | 2006-05-18 | Tokyo Electron Ltd | 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体 |
| CN101578394B (zh) * | 2007-07-31 | 2011-08-03 | 日矿金属株式会社 | 通过无电镀形成金属薄膜的镀敷物及其制造方法 |
| WO2010087392A1 (ja) * | 2009-01-30 | 2010-08-05 | 日鉱金属株式会社 | バリア機能を有する金属元素と触媒能を有する金属元素との合金膜を有する基板 |
| TWI864099B (zh) * | 2019-09-25 | 2024-12-01 | 日商東京威力科創股份有限公司 | 基板液處理方法及基板液處理裝置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4574095A (en) * | 1984-11-19 | 1986-03-04 | International Business Machines Corporation | Selective deposition of copper |
| JPH0762545A (ja) * | 1993-08-30 | 1995-03-07 | Mitsubishi Cable Ind Ltd | 配線基板およびその製造方法 |
| US5969422A (en) * | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
| US6197688B1 (en) * | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
| US6461675B2 (en) * | 1998-07-10 | 2002-10-08 | Cvc Products, Inc. | Method for forming a copper film on a substrate |
| US6380083B1 (en) * | 1998-08-28 | 2002-04-30 | Agere Systems Guardian Corp. | Process for semiconductor device fabrication having copper interconnects |
| JP4049978B2 (ja) * | 1999-09-15 | 2008-02-20 | 三星電子株式会社 | メッキを用いた金属配線形成方法 |
| JP2001240960A (ja) * | 1999-12-21 | 2001-09-04 | Nippon Sheet Glass Co Ltd | 光触媒膜が被覆された物品、その物品の製造方法及びその膜を被覆するために用いるスパッタリングターゲット |
| KR100338112B1 (ko) * | 1999-12-22 | 2002-05-24 | 박종섭 | 반도체 소자의 구리 금속 배선 형성 방법 |
| JP3670238B2 (ja) * | 2000-01-07 | 2005-07-13 | 株式会社日鉱マテリアルズ | 金属めっき方法、前処理剤、それを用いた半導体ウェハー及び半導体装置 |
| JP2001335952A (ja) * | 2000-05-31 | 2001-12-07 | Rikogaku Shinkokai | 無電解めっき方法、並びに、配線装置およびその製造方法 |
| JP2002004081A (ja) * | 2000-06-16 | 2002-01-09 | Learonal Japan Inc | シリコンウエハーへの電気めっき方法 |
| US6479902B1 (en) * | 2000-06-29 | 2002-11-12 | Advanced Micro Devices, Inc. | Semiconductor catalytic layer and atomic layer deposition thereof |
| JP2002025943A (ja) * | 2000-07-12 | 2002-01-25 | Ebara Corp | 基板成膜方法 |
| JP2002053971A (ja) * | 2000-08-03 | 2002-02-19 | Sony Corp | めっき方法及びめっき構造、並びに半導体装置の製造方法及び半導体装置 |
| EP1180553A1 (en) * | 2000-08-15 | 2002-02-20 | Air Products And Chemicals, Inc. | CVD process for depositing copper on a barrier layer |
| JP4083968B2 (ja) * | 2000-11-02 | 2008-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
| US20020064592A1 (en) * | 2000-11-29 | 2002-05-30 | Madhav Datta | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects |
| US6596344B2 (en) * | 2001-03-27 | 2003-07-22 | Sharp Laboratories Of America, Inc. | Method of depositing a high-adhesive copper thin film on a metal nitride substrate |
-
2003
- 2003-12-22 KR KR1020057013668A patent/KR101098568B1/ko not_active Expired - Fee Related
- 2003-12-22 GB GB0513698A patent/GB2417132B/en not_active Expired - Lifetime
- 2003-12-22 AU AU2003299875A patent/AU2003299875A1/en not_active Abandoned
- 2003-12-22 WO PCT/US2003/041185 patent/WO2004068576A2/en not_active Ceased
- 2003-12-22 JP JP2004567443A patent/JP5214092B2/ja not_active Expired - Lifetime
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