JP2006513325A - 触媒を用いた無電解めっきによりパターン化された絶縁体上に金属層を形成する方法 - Google Patents
触媒を用いた無電解めっきによりパターン化された絶縁体上に金属層を形成する方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76859—After-treatment introducing at least one additional element into the layer by ion implantation
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
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- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1073—Barrier, adhesion or liner layers
- H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L2221/1089—Stacks of seed layers
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims (15)
- 基板に形成されたパターン化された絶縁体(107)に金属層を形成するための方法であって、
触媒物質(112)を少なくとも一時的に含む気体状の堆積雰囲気において、前記パターン化された絶縁体に第1材料層(109)を堆積するステップと、
堆積しようとしている前記金属のイオンを含むめっき液に前記第1材料層(109)を曝すステップとを有し、前記第1材料層(109)に取り込まれる前記触媒物質(112)は、金属イオンを還元して前記第1材料層上に金属層を形成する反応を開始させる方法。 - 前記触媒物質(112)は、白金、パラジウム、銀、銅およびコバルトの少なくともいずれかを含む請求項1記載の方法。
- 前記第1材料層(109)を堆積するステップは、前記第1材料の原子と少なくとも一時的に触媒原子とをターゲットからスパッタすることによって前記気体状の堆積雰囲気を生成するステップを有する請求項1記載の方法。
- 前記触媒物質(112)は前記ターゲットに実質的に均一に分散されている請求項3記載の方法。
- 前記触媒物質(112)は前記ターゲットの1つ以上の別個の部分に設けられている請求項3記載の方法。
- 前記第1材料層(109)を堆積するステップは、前記第1材料の原子をターゲットからスパッタすることによって前記気体状の堆積雰囲気を生成するステップと、前記触媒物質を含有する前駆体を供給するステップとを有する請求項1記載の方法。
- 前記気体状の堆積雰囲気中の前記第1材料の原子と前記触媒物質の原子との比率を調整するステップをさらに有する請求項1記載の方法。
- 前記第1材料層を堆積するステップは、1種類以上の前駆体ガスを供給することによって前記気体状の堆積雰囲気を生成し、これにより前記前駆体ガスの少なくとも1つが前記触媒物質を含むようにするステップを有する請求項1記載の方法。
- 前記触媒物質を含有する前駆体ガスの流量および供給時間の少なくとも一方を制御することによって、前記第1材料層に取り込まれる触媒物質(112)の量を制御するステップをさらに有する請求項8記載の方法。
- 前記触媒物質(112)を含有する前駆体ガスは、前記第1材料層(109)が所定の厚さに堆積された後に供給される請求項9記載の方法。
- 前記触媒物質を含有する前駆体ガスは前記第1材料層の堆積を停止した後に供給される請求項6または9記載の方法。
- 前記第1材料層を堆積するため少なくとも2種類の異なる前駆体ガスがデジタル制御方式で順次供給される請求項8記載の方法。
- 前記第1材料層(109)はバリア層を有し、前記バリア層はそのバリア層で覆われた基板部分への前記金属の拡散を実質的に防止する請求項1記載の方法。
- 電気めっきによって前記金属層に第2金属層を形成するステップをさらに有し、前記金属層はシード層として作用する請求項1記載の方法。
- 前記金属層は銅を含む請求項1記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10302644.4 | 2003-01-23 | ||
DE10302644A DE10302644B3 (de) | 2003-01-23 | 2003-01-23 | Verfahren zur Herstellung einer Metallschicht über einem strukturierten Dielektrikum mittels stromloser Abscheidung unter Verwendung eines Katalysators |
US10/602,192 US6951816B2 (en) | 2003-01-23 | 2003-06-24 | Method of forming a metal layer over patterned dielectric by electroless deposition using a catalyst |
US10/602,192 | 2003-06-24 | ||
PCT/US2003/041185 WO2004068576A2 (en) | 2003-01-23 | 2003-12-22 | Method of forming a catalyst containing layer over a patterned dielectric |
Publications (3)
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JP2006513325A true JP2006513325A (ja) | 2006-04-20 |
JP2006513325A5 JP2006513325A5 (ja) | 2009-01-15 |
JP5214092B2 JP5214092B2 (ja) | 2013-06-19 |
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JP (1) | JP5214092B2 (ja) |
KR (1) | KR101098568B1 (ja) |
AU (1) | AU2003299875A1 (ja) |
GB (1) | GB2417132B (ja) |
WO (1) | WO2004068576A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010087392A1 (ja) * | 2009-01-30 | 2010-08-05 | 日鉱金属株式会社 | バリア機能を有する金属元素と触媒能を有する金属元素との合金膜を有する基板 |
JPWO2021060037A1 (ja) * | 2019-09-25 | 2021-04-01 |
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---|---|---|---|---|
US6943106B1 (en) * | 2004-02-20 | 2005-09-13 | Micron Technology, Inc. | Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling |
JP2006128288A (ja) * | 2004-10-27 | 2006-05-18 | Tokyo Electron Ltd | 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体 |
CN101578394B (zh) * | 2007-07-31 | 2011-08-03 | 日矿金属株式会社 | 通过无电镀形成金属薄膜的镀敷物及其制造方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61127868A (ja) * | 1984-11-19 | 1986-06-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 銅の選択的付着方法 |
JPH0762545A (ja) * | 1993-08-30 | 1995-03-07 | Mitsubishi Cable Ind Ltd | 配線基板およびその製造方法 |
JP2001144181A (ja) * | 1999-09-15 | 2001-05-25 | Samsung Electronics Co Ltd | メッキを用いた金属配線形成方法及びそれにより製造された半導体素子 |
WO2001049898A1 (fr) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Procede de galvanoplastie, agent de pretraitement et tranche de semi-conducteurs et dispositif semi-conducteur utilisant cette derniere |
JP2001217204A (ja) * | 1999-12-22 | 2001-08-10 | Hynix Semiconductor Inc | 半導体素子の銅金属配線形成方法 |
JP2001240960A (ja) * | 1999-12-21 | 2001-09-04 | Nippon Sheet Glass Co Ltd | 光触媒膜が被覆された物品、その物品の製造方法及びその膜を被覆するために用いるスパッタリングターゲット |
JP2001335952A (ja) * | 2000-05-31 | 2001-12-07 | Rikogaku Shinkokai | 無電解めっき方法、並びに、配線装置およびその製造方法 |
JP2002004081A (ja) * | 2000-06-16 | 2002-01-09 | Learonal Japan Inc | シリコンウエハーへの電気めっき方法 |
JP2002025943A (ja) * | 2000-07-12 | 2002-01-25 | Ebara Corp | 基板成膜方法 |
JP2002033323A (ja) * | 2000-05-10 | 2002-01-31 | Agere Systems Guardian Corp | 銅相互接続部を有する半導体デバイスの製造方法 |
JP2002053971A (ja) * | 2000-08-03 | 2002-02-19 | Sony Corp | めっき方法及びめっき構造、並びに半導体装置の製造方法及び半導体装置 |
JP2002069642A (ja) * | 2000-08-15 | 2002-03-08 | Air Products & Chemicals Inc | バリア層へのcvd銅付着の改良 |
JP2002141305A (ja) * | 2000-11-02 | 2002-05-17 | Toshiba Corp | 半導体装置の製造方法 |
JP2002356774A (ja) * | 2001-03-27 | 2002-12-13 | Sharp Corp | 金属窒化物基板上に高密着性銅薄膜を堆積する方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5969422A (en) * | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
US6197688B1 (en) * | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
US6461675B2 (en) * | 1998-07-10 | 2002-10-08 | Cvc Products, Inc. | Method for forming a copper film on a substrate |
US6479902B1 (en) * | 2000-06-29 | 2002-11-12 | Advanced Micro Devices, Inc. | Semiconductor catalytic layer and atomic layer deposition thereof |
US20020064592A1 (en) * | 2000-11-29 | 2002-05-30 | Madhav Datta | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects |
-
2003
- 2003-12-22 JP JP2004567443A patent/JP5214092B2/ja not_active Expired - Lifetime
- 2003-12-22 AU AU2003299875A patent/AU2003299875A1/en not_active Abandoned
- 2003-12-22 GB GB0513698A patent/GB2417132B/en not_active Expired - Lifetime
- 2003-12-22 KR KR1020057013668A patent/KR101098568B1/ko active IP Right Grant
- 2003-12-22 WO PCT/US2003/041185 patent/WO2004068576A2/en active Application Filing
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61127868A (ja) * | 1984-11-19 | 1986-06-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 銅の選択的付着方法 |
JPH0762545A (ja) * | 1993-08-30 | 1995-03-07 | Mitsubishi Cable Ind Ltd | 配線基板およびその製造方法 |
JP2001144181A (ja) * | 1999-09-15 | 2001-05-25 | Samsung Electronics Co Ltd | メッキを用いた金属配線形成方法及びそれにより製造された半導体素子 |
JP2001240960A (ja) * | 1999-12-21 | 2001-09-04 | Nippon Sheet Glass Co Ltd | 光触媒膜が被覆された物品、その物品の製造方法及びその膜を被覆するために用いるスパッタリングターゲット |
JP2001217204A (ja) * | 1999-12-22 | 2001-08-10 | Hynix Semiconductor Inc | 半導体素子の銅金属配線形成方法 |
WO2001049898A1 (fr) * | 2000-01-07 | 2001-07-12 | Nikko Materials Co., Ltd. | Procede de galvanoplastie, agent de pretraitement et tranche de semi-conducteurs et dispositif semi-conducteur utilisant cette derniere |
JP2002033323A (ja) * | 2000-05-10 | 2002-01-31 | Agere Systems Guardian Corp | 銅相互接続部を有する半導体デバイスの製造方法 |
JP2001335952A (ja) * | 2000-05-31 | 2001-12-07 | Rikogaku Shinkokai | 無電解めっき方法、並びに、配線装置およびその製造方法 |
JP2002004081A (ja) * | 2000-06-16 | 2002-01-09 | Learonal Japan Inc | シリコンウエハーへの電気めっき方法 |
JP2002025943A (ja) * | 2000-07-12 | 2002-01-25 | Ebara Corp | 基板成膜方法 |
JP2002053971A (ja) * | 2000-08-03 | 2002-02-19 | Sony Corp | めっき方法及びめっき構造、並びに半導体装置の製造方法及び半導体装置 |
JP2002069642A (ja) * | 2000-08-15 | 2002-03-08 | Air Products & Chemicals Inc | バリア層へのcvd銅付着の改良 |
JP2002141305A (ja) * | 2000-11-02 | 2002-05-17 | Toshiba Corp | 半導体装置の製造方法 |
JP2002356774A (ja) * | 2001-03-27 | 2002-12-13 | Sharp Corp | 金属窒化物基板上に高密着性銅薄膜を堆積する方法 |
Cited By (8)
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WO2010087392A1 (ja) * | 2009-01-30 | 2010-08-05 | 日鉱金属株式会社 | バリア機能を有する金属元素と触媒能を有する金属元素との合金膜を有する基板 |
US8395264B2 (en) | 2009-01-30 | 2013-03-12 | Jx Nippon Mining & Metals Corporation | Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power |
KR101277357B1 (ko) * | 2009-01-30 | 2013-06-20 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 배리어 기능을 가진 금속 원소와 촉매능을 가진 금속 원소의 합금막을 가진 기판 |
TWI415962B (zh) * | 2009-01-30 | 2013-11-21 | Nippon Mining Co | 具備由具有障蔽機能之金屬元素與具有觸媒能之金屬元素所成之合金膜的基板 |
JP5399421B2 (ja) * | 2009-01-30 | 2014-01-29 | Jx日鉱日石金属株式会社 | バリア機能を有する金属元素と触媒能を有する金属元素との合金膜を有する基板 |
JPWO2021060037A1 (ja) * | 2019-09-25 | 2021-04-01 | ||
WO2021060037A1 (ja) * | 2019-09-25 | 2021-04-01 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置 |
JP7203995B2 (ja) | 2019-09-25 | 2023-01-13 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR101098568B1 (ko) | 2011-12-26 |
AU2003299875A1 (en) | 2004-08-23 |
WO2004068576A3 (en) | 2004-09-10 |
GB2417132A (en) | 2006-02-15 |
KR20050088363A (ko) | 2005-09-05 |
JP5214092B2 (ja) | 2013-06-19 |
GB0513698D0 (en) | 2005-08-10 |
WO2004068576A2 (en) | 2004-08-12 |
GB2417132B (en) | 2007-04-04 |
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