JP2006502564A - 半導体チップを有する回路装置、該回路の担体、およびボンディングワイヤ接続方法 - Google Patents
半導体チップを有する回路装置、該回路の担体、およびボンディングワイヤ接続方法 Download PDFInfo
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- JP2006502564A JP2006502564A JP2004528420A JP2004528420A JP2006502564A JP 2006502564 A JP2006502564 A JP 2006502564A JP 2004528420 A JP2004528420 A JP 2004528420A JP 2004528420 A JP2004528420 A JP 2004528420A JP 2006502564 A JP2006502564 A JP 2006502564A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 8
- 241000587161 Gomphocarpus Species 0.000 claims abstract description 29
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
本発明は、半導体チップと、コンタクト場所が設けられた担体と、該半導体チップの接続パッドを該コンタクト場所に接続するワイヤとを有する回路装置に関する。ここでは、該コンタクト場所に第1のネイルヘッドコンタクトが形成され、該ワイヤの第1の端部は第2のネイルヘッドコンタクトによって該半導体チップの接続パッドに接続され、該ワイヤの第2の端部はウェッジコンタクトによって第1のネイルヘッドコンタクトに接続されている。本発明はさらに、この種の回路装置の製造方法にも関する。
Claims (6)
- 半導体チップ(3)と、コンタクト場所が設けられた担体(1)と、該半導体チップ(3)の接続パッドを該コンタクト場所に接続するワイヤ(6)とを有する回路装置であって、
該コンタクト場所に第1のネイルヘッドコンタクト(4)が形成されており、
該ワイヤ(6)の第1の端部が、該半導体チップ(3)の接続パッドによって第2のネイルヘッドコンタクト(5)に接続されており、
該ワイヤ(6)の第2の端部が、ウェッジコンタクト(7)によって前記第1のネイルヘッドコンタクト(5)と接続されている形式のものにおいて、
該コンタクト場所は、該担体(1)内の貫通接触接続部(9)であり、
前記第1のネイルヘッドコンタクト(4)は担体表面上に、前記貫通接触接続部(9)の場所にて、ここに別の表面メタライジング部を設けずに直接取り付けられていることを特徴とする回路装置。 - 該担体(1)はセラミックスによって形成されている、請求項1記載の回路装置。
- 該担体(1)は多層のセラミックスによって形成されており、
前記貫通接触接続部(9)は、該担体の表面と2つのセラミック層間のメタライジング部(2)とを接続する、請求項1または2記載の回路装置。 - 該担体(1)はPCボードである、請求項1記載の回路装置。
- 該担体(1)は、多層のPCボードによって形成されており、
前記貫通接触接続部(9)は、該担体の表面と2つのPCボード層間のメタライジング部(2)とを接続する、請求項1または4記載の回路装置。 - 半導体チップ(3)の接続パッドと、担体(1)に設けられた貫通接触接続部(9)とを電気的に接続する方法において、
・第1のネイルヘッドコンタクト(4)を担体表面上に、前記貫通接触接続部(9)の場所にて、ここに別の表面メタライジング部を設けずに、ボンディングツールのキャピラリによって直接形成するステップと、
・ワイヤ(6)を前記第1のネイルヘッドコンタクト(4)から分離するステップと、
・第2のネイルヘッドコンタクト(5)を該半導体チップ(3)の接続パッド上に、該ボンディングツールのキャピラリ(8)によって形成するステップと、
・前記ワイヤ(6)を前記第1のネイルヘッドコンタクト(4)まで案内するステップと、
・前記ワイヤ(6)の端部とのウェッジコンタクト(7)を前記第1のネイルヘッドコンタクト(4)上に、該ボンディングツールのキャピラリ(8)によって形成するステップを有することを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10233607A DE10233607B4 (de) | 2002-07-24 | 2002-07-24 | Anordnung mit einem Halbleiterchip und einem mit einer Durchkontaktierung versehenen Träger sowie einem ein Anschlusspad des Halbleiterchips mit der Durchkontaktierung verbindenden Draht und Verfahren zum Herstellen einer solchen Anordnung |
PCT/DE2003/002465 WO2004017400A1 (de) | 2002-07-24 | 2003-07-22 | Anordnung mit einem halbleiterchip und dessen träger sowie verfahren zur bond-drahtverbindung |
Publications (2)
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JP2006502564A true JP2006502564A (ja) | 2006-01-19 |
JP4308765B2 JP4308765B2 (ja) | 2009-08-05 |
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JP2004528420A Expired - Fee Related JP4308765B2 (ja) | 2002-07-24 | 2003-07-22 | ボンディングワイヤ接続方法 |
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US (1) | US7053489B2 (ja) |
EP (1) | EP1523769A1 (ja) |
JP (1) | JP4308765B2 (ja) |
AU (1) | AU2003258458A1 (ja) |
DE (1) | DE10233607B4 (ja) |
WO (1) | WO2004017400A1 (ja) |
Families Citing this family (5)
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US20070216026A1 (en) * | 2006-03-20 | 2007-09-20 | Adams Zhu | Aluminum bump bonding for fine aluminum wire |
US8021931B2 (en) * | 2006-12-11 | 2011-09-20 | Stats Chippac, Inc. | Direct via wire bonding and method of assembling the same |
US20080191367A1 (en) * | 2007-02-08 | 2008-08-14 | Stats Chippac, Ltd. | Semiconductor package wire bonding |
DE102015221979A1 (de) * | 2015-11-09 | 2017-05-11 | Robert Bosch Gmbh | Kontaktieranordnung für ein Leiterplattensubstrat und Verfahren zum Kontaktieren eines Leiterplattensubstrats |
DE102016109349A1 (de) * | 2016-05-20 | 2017-11-23 | Infineon Technologies Ag | Chipgehäuse, verfahren zum bilden eines chipgehäuses und verfahren zum bilden eines elektrischen kontakts |
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JPS60136356A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体装置 |
US4868634A (en) * | 1987-03-13 | 1989-09-19 | Citizen Watch Co., Ltd. | IC-packaged device |
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JP2757574B2 (ja) * | 1991-03-14 | 1998-05-25 | 日本電気株式会社 | 低誘電率ハイブリッド多層セラミック配線基板の製造方法 |
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DE4318061C2 (de) * | 1993-06-01 | 1998-06-10 | Schulz Harder Juergen | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
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JPH09330943A (ja) * | 1996-06-13 | 1997-12-22 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP3344235B2 (ja) * | 1996-10-07 | 2002-11-11 | 株式会社デンソー | ワイヤボンディング方法 |
US6133072A (en) * | 1996-12-13 | 2000-10-17 | Tessera, Inc. | Microelectronic connector with planar elastomer sockets |
JP3042441B2 (ja) * | 1997-03-12 | 2000-05-15 | 日本電気株式会社 | 低温焼成ガラスセラミックス基板とその製造方法 |
KR100309957B1 (ko) * | 1997-09-08 | 2002-08-21 | 신꼬오덴기 고교 가부시키가이샤 | 반도체장치 |
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JP2000068309A (ja) * | 1998-08-21 | 2000-03-03 | Misuzu Kogyo:Kk | 半導体装置の実装方法 |
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JP3854054B2 (ja) * | 2000-10-10 | 2006-12-06 | 株式会社東芝 | 半導体装置 |
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2002
- 2002-07-24 DE DE10233607A patent/DE10233607B4/de not_active Expired - Fee Related
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2003
- 2003-07-22 JP JP2004528420A patent/JP4308765B2/ja not_active Expired - Fee Related
- 2003-07-22 EP EP03787714A patent/EP1523769A1/de not_active Withdrawn
- 2003-07-22 WO PCT/DE2003/002465 patent/WO2004017400A1/de active Application Filing
- 2003-07-22 AU AU2003258458A patent/AU2003258458A1/en not_active Abandoned
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AU2003258458A1 (en) | 2004-03-03 |
JP4308765B2 (ja) | 2009-08-05 |
DE10233607A1 (de) | 2004-02-12 |
WO2004017400A1 (de) | 2004-02-26 |
DE10233607B4 (de) | 2005-09-29 |
US20050127497A1 (en) | 2005-06-16 |
US7053489B2 (en) | 2006-05-30 |
EP1523769A1 (de) | 2005-04-20 |
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