JP2006179918A - モールディングコンパウンドの半導体装置への付着を強化するコーティング - Google Patents
モールディングコンパウンドの半導体装置への付着を強化するコーティング Download PDFInfo
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- JP2006179918A JP2006179918A JP2005367030A JP2005367030A JP2006179918A JP 2006179918 A JP2006179918 A JP 2006179918A JP 2005367030 A JP2005367030 A JP 2005367030A JP 2005367030 A JP2005367030 A JP 2005367030A JP 2006179918 A JP2006179918 A JP 2006179918A
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Images
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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Abstract
【解決手段】半導体装置をモールディングする前に、半導体装置をポリマープライマーによって被覆することによってリードフレームのようなキャリヤ上に取り付けられた半導体チップを備えた半導体装置とモールディングコンパウンドとの間の付着を強化する方法を提供する。このような被覆は、ポリマー溶液において又はポリマー溶液を用いて半導体装置をディッピング、ドリッピング又はスプレーによって実施してもよい。
【選択図】図2
Description
寸法58×15×0.2mmを有する銅合金C194(公称重量組成は97.5%銅、2.35%鉄、0.12%亜鉛、及び0.07%燐)を、ジクロロメタン、メタノール、10%水酸化ナトリウム及び10%硫酸で洗い、最後に脱イオン化水ですすいで窒素ガスでブローした。ダイボンディング及びワイヤボンディング用の条件をシミュレートして、洗った銅プレートをオーブンにおいて約60分間約150℃で、次いで3分間230℃で加熱した。ニッケルメッキ及びパラジウム若しくは金仕上げの銅プレートを同じ加熱プロファイルで熱的に処理した。酸化された試料を、異なる量のメラミンフェノールホルムアルデヒド樹脂を含むアルコール溶液にドロップした。被覆された試料(標本)を180℃でベークした。長さ7mmのラップ長を有する単一ラップジョイントは、約10分間160℃でスミトモ(Sumitomo)EME6650Rエポキシモールディングコンパウンド(EMC)によって被覆された銅プレートを圧縮モールディングによって作製した。ラップ−シアー(lap-shear)試料を約4時間175℃でポスト硬化(キュア)した。ラップ−シアーテストを室温でクロスヘッド速度1.3mm/minでインストロン材料テスタ上で行った。5個の試料を各サンプルについてテストし、サンプルのラップ−シアー長として平均をとった。表1は得られた結果をまとめたものである。
寸法30×7×0.2mmを有する銅合金C194(公称重量組成は97.5%銅、2.35%鉄、0.12%亜鉛、及び0.07%燐)をジクロロメタン及びエタノールに浸すことによって脱脂し、約2分間室温で10重量%の硫酸で活性化した。次いで、酸洗いした銅を脱イオン化水ですすいで窒素ガスでブローした。乾燥後、試料を10%メラミンフェノールホルムアルデヒド樹脂を含むアルコール溶液にドロップした。被覆された試料(標本)を180℃又は200℃でベークした。直径3mmのモールドされたボタンを、温度175℃及び1000kgfでスミトモ(Sumitomo)EME6600CSエポキシモールディングコンパウンド(EMC)によって転写モールディングを介して各プライマー被覆された試料上に作製した。EMCボタンを有する銅試料を約4時間175℃でポスト硬化し、次いで、JEDEC MSL Iに従って約168時間85℃で85%RH環境で事前処理(プレコンディショニング)した。プレコンディショニング後2時間以内に、試料を260℃までリフロー加熱プロファイルを行った。加熱処理された試料のEMCボタンをDage−4000マシーン上でシアーテストし、基板からボタンを分離する最大ロードを報告した。得られた結果を表2にまとめた。
貴金属へのEMC付着の改善におけるプライマーの硬化を証明するために、寸法30×7×0.2mmを有する銅合金C194をクリーンにして、ニッケル/銀薄層でメッキした。メッキされた試料を、さらにクリーニングすることなしに10%メラミンフェノールホルムアルデヒド樹脂を含むアルコール溶液にドロップした。被覆された試料(標本)を180℃で5分間ベークした。直径3mmのモールドされたEMCボタンを、温度175℃及び1000kgfでスミトモ(Sumitomo)EME6600CSEMCによって転写モールディングすることによって各プライマー被覆された試料上に作製した。EMCボタンを有する試料を約4時間175℃でポスト硬化し、次いで、JEDEC MSL Iに従って約168時間85℃で85%RH環境でプレコンディショニングを行った。プレコンディショニング後2時間以内に、試料を260℃までリフロー加熱プロファイルを行った。加熱処理された試料のEMCボタンをメッキした基板から押しのけて、最大ロードを得た。表3は得られた結果まとめたものである。
Claims (21)
- 半導体装置をモールディングする前にキャリヤ上に取り付けられた半導体チップを備えた半導体装置とモールディングコンパウンドとの間の付着を強化する方法であって、半導体装置をポリマープライマーによって被覆する段階を備えた方法。
- 半導体装置が半導体チップとキャリヤとの間に形成された導電性ワイヤ接続を含み、前記被覆段階がさらにモールディング前にポリマープライマーでワイヤ接続を被覆する段階を含む請求項1に記載の方法。
- ポリマープライマーが窒素含有ポリマーコンパウンドを備えた請求項1に記載の方法。
- 窒素含有ポリマーコンパウンドが、メラニン修飾されたフェノール樹脂、アクリルコポリマー及びベンズイミダゾールコポリマーからなる群から選択される請求項3に記載の方法。
- フェノール樹脂が、多官能フェノールとアルデヒドとの反応を介して生成される請求項4に記載の方法。
- 多官能フェノールが、フェノール、クレゾール、ビスフェノールA、ビスフェノールF、ビスフェノールS、及び、脂肪族鎖フェノールからなる群から選択される請求項5に記載の方法。
- ポリマープライマーが溶媒に溶解された一又は二以上のポリマーによって構成された溶液を備えた請求項1に記載の方法。
- 溶液が0.01重量%から50重量%のポリマーを備えた請求項7に記載の方法。
- 溶液が1.0重量%から10重量%のポリマーを備えた請求項8に記載の方法。
- ポリマーがメラニン修飾されたフェノール樹脂を備え、溶媒が水及びアルコールを備えた請求項7に記載の方法。
- アルコールが、メタノール、エタノール、プロパノール及びブタノールからなる群から選択される請求項10に記載の方法。
- ポリマーがアクリルコポリマーを備え、溶媒がアルコール、エーテル、エステル、ケトン、アルカン及びシクロアルカンからなる群から選択された請求項7に記載の方法。
- ポリマーがベンズイミダゾールコポリマーを備え、溶媒がジメチルホルムアミド及び/又はNメチルピロリドンを備えた請求項7に記載の方法。
- ポリマープライマーがポリマーラテックスを備えた請求項1に記載の方法。
- 半導体装置をポリマープライマーで被覆する前に、半導体装置をプラズマでクリーニングする段階をさらに備えた請求項1に記載の方法。
- 半導体装置をポリマープライマーで被覆する前に、1分間から30分間の時間、60℃から260℃の温度で半導体装置をベーキングする段階をさらに備えた請求項1に記載の方法。
- 半導体装置を160℃から210℃の温度でベーキングする請求項16に記載の方法。
- 半導体装置を3分間から5分間の時間ベーキングする請求項16に記載の方法。
- ポリマー被覆の厚さが10nmから0.1mmである請求項1に記載の方法。
- ポリマー被覆の厚さが300nmから30μmである請求項1に記載の方法。
- 請求項1に記載の方法で作製された半導体パッケージ。
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CN109155349A (zh) * | 2016-05-18 | 2019-01-04 | 亮锐控股有限公司 | 照明组件及用于制造照明组件的方法 |
JP2019057574A (ja) * | 2017-09-20 | 2019-04-11 | トヨタ自動車株式会社 | 半導体装置 |
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JP5182915B2 (ja) * | 2007-09-18 | 2013-04-17 | 株式会社ブリヂストン | 導電性エンドレスベルト |
US8432036B2 (en) * | 2009-01-22 | 2013-04-30 | Aculon, Inc. | Lead frames with improved adhesion to plastic encapsulant |
US9313897B2 (en) * | 2012-09-14 | 2016-04-12 | Infineon Technologies Ag | Method for electrophoretically depositing a film on an electronic assembly |
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TWI623049B (zh) * | 2016-11-04 | 2018-05-01 | 英屬開曼群島商鳳凰先驅股份有限公司 | 封裝基板及其製作方法 |
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CN109155349A (zh) * | 2016-05-18 | 2019-01-04 | 亮锐控股有限公司 | 照明组件及用于制造照明组件的方法 |
JP2019522895A (ja) * | 2016-05-18 | 2019-08-15 | ルミレッズ ホールディング ベーフェー | 照明アセンブリ及び照明アセンブリの製造方法 |
JP2019057574A (ja) * | 2017-09-20 | 2019-04-11 | トヨタ自動車株式会社 | 半導体装置 |
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SG123736A1 (en) | 2006-07-26 |
EP1675172A1 (en) | 2006-06-28 |
US7329617B2 (en) | 2008-02-12 |
CN100383941C (zh) | 2008-04-23 |
US20060131720A1 (en) | 2006-06-22 |
KR20060072068A (ko) | 2006-06-27 |
JP4402649B2 (ja) | 2010-01-20 |
MY151621A (en) | 2014-06-30 |
TW200629494A (en) | 2006-08-16 |
TWI295091B (en) | 2008-03-21 |
KR100685160B1 (ko) | 2007-02-22 |
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