JP2019057574A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019057574A JP2019057574A JP2017180362A JP2017180362A JP2019057574A JP 2019057574 A JP2019057574 A JP 2019057574A JP 2017180362 A JP2017180362 A JP 2017180362A JP 2017180362 A JP2017180362 A JP 2017180362A JP 2019057574 A JP2019057574 A JP 2019057574A
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- 238000007789 sealing Methods 0.000 claims abstract description 34
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- 150000008065 acid anhydrides Chemical class 0.000 claims abstract description 25
- 150000004985 diamines Chemical class 0.000 claims abstract description 25
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 12
- 229920001721 polyimide Polymers 0.000 claims description 22
- 239000004642 Polyimide Substances 0.000 claims description 21
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- 239000000853 adhesive Substances 0.000 description 6
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 125000002947 alkylene group Chemical group 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 125000005587 carbonate group Chemical group 0.000 description 4
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 239000004962 Polyamide-imide Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
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- 229910052802 copper Inorganic materials 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 125000001033 ether group Chemical group 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
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- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
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- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
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- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
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- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 235000011962 puddings Nutrition 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
Landscapes
- Paints Or Removers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
半導体素子と、リードフレームと、封止樹脂体と、前記リードフレーム及び前記封止樹脂体の間に配置されるプライマー層と、を含む半導体装置であって、
前記プライマー層は、酸無水物とジアミンとの重合体であるポリアミック酸のイミド化物であるポリイミド重合体を含み、
下記式(1)で計算される値Xが0.182以上0.213以下である、半導体装置:
X=(αa+αb)/(Va+Vb) 式(1)
[式(1)中、αaは酸無水物の分極率であり、αbはジアミンの分極率であり、Vaは酸無水物のファンデルワールス体積であり、Vbはジアミンのファンデルワールス体積である。]。
X=(αa+αb)/(Va+Vb) 式(1)
[式(1)中、αaは酸無水物の分極率であり、αbはジアミンの分極率であり、Vaは酸無水物のファンデルワールス体積であり、Vbはジアミンのファンデルワールス体積である。]。
図3は、本実施形態の半導体装置を製造する方法例を説明するための概略断面図である。
<積層体の作製>
それぞれの下記式(A1)〜(A4)及び(B1)〜(B5)のポリイミド重合体に対応するポリアミック酸をそれぞれ含むプライマー液A1〜A4及びB1〜B5を用意した。それぞれのプライマー液は、それぞれの原料となる酸無水物とジアミンを等モル量でN−メチルピロリドン溶液中に添加し、終夜撹拌することで得た。なお、式(A1)〜(A4)及び(B1)〜(B5)のポリイミド重合体の値Xを下記表1に示す。また、式(A1)〜(A4)及び(B1)〜(B5)のポリイミド重合体に対応するポリアミック酸を製造するための酸無水物及びジアミンについて、分極率(αa、αb)、ファンデルワールス体積(Va、Vb)も併せて表1に示す。なお、これらの値は、「新訂版 最新ポリイミド−基礎と応用−、エヌ・ティー・エス、102-128(2010)」を参照して使用した。
作製した積層体A1〜A4及びB1〜B5を250℃の高温環境下に配置した。そして、封止樹脂体部分にツールを当て、封止樹脂体がリードフレームから外れたときの圧力をプライマー層と封止樹脂体との接着強度(MPa)として測定した。結果を表1に示す。なお、測定装置はノードソン・アドバンスト・テクノロジー株式会社の万能型ボンドテスター SERIES4000を使用した。
2 半導体素子
3 はんだ層
4 プライマー層
5 封止樹脂体
10 半導体装置
10’ 半導体装置の中間体、
101a 第1のリードフレーム
101b 第2のリードフレーム
102a 第1の半導体素子
102b 第2の半導体素子
103a、103b 第1のはんだ層
104 プライマー層
105 封止樹脂体
106a、106b 金属ブロック
107a、107b 第2のはんだ層
108a、108b 第3のはんだ層
100 半導体装置
Claims (1)
- 半導体素子と、リードフレームと、封止樹脂体と、前記リードフレーム及び前記封止樹脂体の間に配置されるプライマー層と、を含む半導体装置であって、
前記プライマー層は、酸無水物とジアミンとの重合体であるポリアミック酸のイミド化物であるポリイミド重合体を含み、
下記式(1)で計算される値Xが0.182以上0.213以下である、半導体装置:
X=(αa+αb)/(Va+Vb) 式(1)
[式(1)中、αaは酸無水物の分極率であり、αbはジアミンの分極率であり、Vaは酸無水物のファンデルワールス体積であり、Vbはジアミンのファンデルワールス体積である。]。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2021002610A (ja) * | 2019-06-24 | 2021-01-07 | 富士電機株式会社 | 半導体モジュール、車両、および半導体モジュールの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04366194A (ja) * | 1991-06-12 | 1992-12-18 | Shin Etsu Chem Co Ltd | 半導体封止用エポキシ樹脂成形材料接着用プライマー組成物 |
JP2006179918A (ja) * | 2004-12-22 | 2006-07-06 | Asm Assembly Automation Ltd | モールディングコンパウンドの半導体装置への付着を強化するコーティング |
JP2015098521A (ja) * | 2013-11-19 | 2015-05-28 | 住友ベークライト株式会社 | 封止用樹脂組成物及び電子部品装置 |
JP2016015372A (ja) * | 2014-07-01 | 2016-01-28 | 株式会社デンソー | 電装部品 |
JP2017010025A (ja) * | 2015-06-25 | 2017-01-12 | キヤノン株式会社 | 電子写真感光体、プロセスカートリッジおよび電子写真装置 |
-
2017
- 2017-09-20 JP JP2017180362A patent/JP6787285B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04366194A (ja) * | 1991-06-12 | 1992-12-18 | Shin Etsu Chem Co Ltd | 半導体封止用エポキシ樹脂成形材料接着用プライマー組成物 |
JP2006179918A (ja) * | 2004-12-22 | 2006-07-06 | Asm Assembly Automation Ltd | モールディングコンパウンドの半導体装置への付着を強化するコーティング |
JP2015098521A (ja) * | 2013-11-19 | 2015-05-28 | 住友ベークライト株式会社 | 封止用樹脂組成物及び電子部品装置 |
JP2016015372A (ja) * | 2014-07-01 | 2016-01-28 | 株式会社デンソー | 電装部品 |
JP2017010025A (ja) * | 2015-06-25 | 2017-01-12 | キヤノン株式会社 | 電子写真感光体、プロセスカートリッジおよび電子写真装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021002610A (ja) * | 2019-06-24 | 2021-01-07 | 富士電機株式会社 | 半導体モジュール、車両、および半導体モジュールの製造方法 |
JP7367352B2 (ja) | 2019-06-24 | 2023-10-24 | 富士電機株式会社 | 半導体モジュール、車両、および半導体モジュールの製造方法 |
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