WO2002075809A1 - Masque pour l'assemblage d'un dispositif a semiconducteur et procede d'assemblage dudit dispositif - Google Patents

Masque pour l'assemblage d'un dispositif a semiconducteur et procede d'assemblage dudit dispositif Download PDF

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Publication number
WO2002075809A1
WO2002075809A1 PCT/JP2002/002573 JP0202573W WO02075809A1 WO 2002075809 A1 WO2002075809 A1 WO 2002075809A1 JP 0202573 W JP0202573 W JP 0202573W WO 02075809 A1 WO02075809 A1 WO 02075809A1
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WIPO (PCT)
Prior art keywords
mask sheet
semiconductor device
adhesive layer
lead frame
assembling
Prior art date
Application number
PCT/JP2002/002573
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English (en)
Japanese (ja)
Inventor
Katsuji Nakaba
Yuichi Moriya
Toshihiro Nakajima
Original Assignee
Tomoegawa Paper Co., Ltd.
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26611699&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2002075809(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP2001081098A external-priority patent/JP4002736B2/ja
Priority claimed from JP2001146606A external-priority patent/JP4002739B2/ja
Application filed by Tomoegawa Paper Co., Ltd. filed Critical Tomoegawa Paper Co., Ltd.
Priority to KR20037012122A priority Critical patent/KR100572191B1/ko
Publication of WO2002075809A1 publication Critical patent/WO2002075809A1/fr

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Definitions

  • the present invention relates to a mask sheet for assembling a semiconductor device and a method for assembling a semiconductor device.
  • the present invention is used to mask a lead frame from a sealing resin when assembling a semiconductor device (semiconductor package) such as a QFN by mounting a semiconductor chip on a metal lead frame and sealing the resin.
  • the present invention relates to a semiconductor device assembling mask sheet and a method for assembling a semiconductor device using the same.
  • this QFN is manufactured as follows. That is, first, in the adhesive sheet attaching step, a mask sheet made of an adhesive sheet is attached and masked on one side of the lead frame, and then, in the die attaching step, a plurality of sheets are formed on the opposite side of the lead frame. A semiconductor element such as a semiconductor chip is mounted on the semiconductor element mounting section (die pad section). Next, in a wire bonding step, a plurality of leads and the semiconductor element are electrically connected by a bonding wire such as a gold wire.
  • the semiconductor element mounted on the lead frame is sealed with a sealing resin, and then, the mask sheet is peeled off from the lead frame to form a QFN array in which a plurality of QFNs are arranged.
  • a knit is formed and finally singulated by dicing for each QFN.
  • an adhesive sheet used in the above method a heat-resistant film coated with an acryl-based adhesive or a rubber-based adhesive mainly composed of rubber such as natural rubber or SBR has been used.
  • a mask sheet having an adhesive layer made of an acrylic adhesive is used, decomposition occurs due to heat in the process of bonding the semiconductor chip to the lead frame, and the decomposed substance contaminates the lead frame, and the gold is removed.
  • an object of the present invention is to eliminate the problem of gold wire-bonding failure (wire-to-bonding failure) during assembly of a semiconductor device, suppress the resin encapsulant from sticking out, and prevent adhesive residue from remaining.
  • Another object of the present invention is to provide a method for efficiently assembling a semiconductor device using such a mask sheet.
  • the mask sheet is peeled off from the lead frame after being exposed to the environment at 150 to 180 ° C for 1 to 6 hours in the die attach process and the resin sealing process.
  • heat resistance in the above environment is the most important property.
  • the present inventor has found that by producing a mask sheet using a specific heat-resistant film and a silicone-based pressure-sensitive adhesive, one that can withstand the above-mentioned environment can be obtained. It was completed.
  • the mask sheet (adhesive sheet) for manufacturing a semiconductor device of the present invention has an adhesive layer on one side of the heat-resistant base material and is releasably attached to the lead frame.
  • a heat-resistant film having a glass transition temperature of 150 ° C or more and a linear expansion coefficient of 150 to 50 ppm / ° C at 150 to 200 ° C is used as the conductive substrate.
  • the adhesive layer is formed using a silicone-based adhesive, and the weight loss rate when the adhesive layer is heated at 180 ° C for 1 hour is 5% or less. Is preferred.
  • the adhesive layer is formed using a silicone-based pressure-sensitive adhesive containing a polyorganosiloxane having an average molecular weight of 100,000 to 1,500,000. 5 0-2 0 0 dynamic modulus at ° C is 1. 0 X 1 0 4 P a higher than and even not preferable.
  • silicone-based pressure-sensitive adhesive those having polydimethylsiloxane as a main component and those having polyalkylalkenylsiloxane and polyalkylhydrogensiloxane as main components are preferable.
  • a mask sheet is pressure-bonded to a lead frame, a semiconductor element is mounted on the lead frame to which the mask sheet is adhered, and the semiconductor element and the lead frame are connected by a metal wire.
  • the method comprises sealing the resin with a resin sealant, and then peeling off the mask sheet, characterized in that the above-mentioned mask sheet is used.
  • FIG. 1 is a schematic sectional view of a mask sheet for assembling a semiconductor device according to the present invention.
  • FIG. 2 is a schematic plan view showing an example of a lead frame used when manufacturing a QFN using the mask sheet for assembling a semiconductor device of the present invention.
  • 3A to 3F are process diagrams showing an example of a method for assembling a QFN using the semiconductor device assembling mask sheet of the present invention.
  • a mask sheet 10 for assembling a semiconductor device of the present invention has an adhesive layer 12 formed on one surface of a heat-resistant film 11 using a silicone-based adhesive. .
  • a film having flexibility is preferable because the heat-resistant film 11 is easy to handle when attaching the mask sheet 10 to the lead frame or peeling it off.
  • a heat-resistant film having a glass transition temperature (Tg) of 150 ° C. or more and a linear expansion coefficient at 150 to 200 ° C. of 10 to 50 ppm / ° C. is used.
  • Tg glass transition temperature
  • the mask sheet is exposed to an atmosphere of 150 to 180 ° C in the die attach process, wire-bonding process, resin sealing process, etc., but the heat-resistant film undergoes glass transition.
  • Tg glass transition temperature
  • the coefficient of linear expansion increases rapidly, and the difference in thermal expansion from the lead frame made of metal increases.
  • the Tg of the heat-resistant film needs to be 150 ° C or higher, and preferably 180 ° C or higher.
  • the linear expansion coefficient of the iim film at 150 to 200 ° C is 10 to 50 ppm / ° C, and particularly preferably 15 to 40 ppm / ° C.
  • films satisfying these heat resistance conditions include films such as polyimide, polyamide, polyether sulfone, polyphenylene sulfide, polyether ketone, polyester ether ketone, triacetyl cellulose, and polyether imide. Is raised.
  • the line J3 Peng Zhang coefficient of the heat-resistant film in the present invention can be obtained as follows. In other words, after heating the heat-resistant film at 200 ° C for 1 hour, cut the heated heat-resistant film into 5 x 25 mm and attach it to TMA (Thermal Mechanical Analyzer, manufactured by Vacuum Riko; TM9300). . Next, the elongation of the sample when the temperature is raised from 150 to 200 ° C with a load of 1 g at a rate of 3 ° C / min can be measured, and the elongation can be obtained by the following formula.
  • TMA Thermal Mechanical Analyzer
  • the adhesive layer in the mask sheet of the present invention has little change in decomposition, deterioration, and the like with respect to the heat history in the die attach, the wire bonding step, and the resin sealing step, and is stable. It is necessary to have adhesive strength. Also, in order for the mask sheet to be peelable from the lead frame, the heat-resistant adhesive layer of the mask sheet must be heat-resistant. It is necessary that the adhesive strength to the film is higher than the adhesive strength to the resin sealant and the lead frame.
  • the silicone-based pressure-sensitive adhesive satisfies such requirements and can form an adhesive layer that can withstand the above-mentioned environment.
  • the adhesive layer is formed using a silicone-based pressure-sensitive adhesive, and the weight loss rate when the adhesive layer is heated at 180 ° C. for 1 hour may be 5% or less. Necessary, preferably 3% or less. If the weight loss rate exceeds 5%, the lead frame will be contaminated by the decomposed product of the adhesive layer, particularly in the process of die attach, and a problem will occur in that the bonding failure of the gold wire will occur.
  • Silicone pressure-sensitive adhesives are divided into an organic peroxide curing type that uses peroxide and an addition reaction type that uses a platinum catalyst, depending on the curing reaction form. Since a certain low-molecular organic substance is generated and may contaminate the lead frame, the silicone-based pressure-sensitive adhesive of the addition reaction is preferably used in the present invention.
  • Specific examples of preferred silicone-based pressure-sensitive adhesives include those mainly containing polydimethylsiloxane or polymethylphenylsiloxane, and those mainly containing polyalkylalkenylsiloxane and polyalkylhydrogensiloxane. Further, for example, those obtained by bonding a silicone raw rubber mainly composed of polyorganosiloxane and a silicone resin mainly composed of trimethylsiloxycyanic acid can be mentioned.
  • polydimethylsiloxane or polymethylphenylsiloxane when used as the polyorganosiloxane, they do not have an unsaturated bond and the addition reaction does not proceed. And used as an organic peroxide-based silicone adhesive.
  • polyalkylalkenylsiloxane when polyalkylalkenylsiloxane is used as the polyorganosiloxane, since polyalkylalkenylsiloxane has a vinyl group having an unsaturated bond, polyalkylhydrogensiloxane having an active hydrogen group that reacts with the vinyl group is used. It is used as an addition-reaction-type silicone adhesive by adding it as a curing agent and adding a platinum-based catalyst. This addition reaction type silicone adhesive is cured by heating at 100 to 140 ° C. for several minutes.
  • the adhesive layer is formed by using a silicone-based pressure-sensitive adhesive containing a polyorganosiloxane having an average molecular weight of 100,000 to 1,500,000, and
  • the dynamic elastic modulus at 0 ° C. is preferably 1.0 ⁇ 10 4 Pa or more. More preferred average molecular weights are in the range of 100,000 to 1,000,000.
  • the content of the polyorganosiloxane is in the range of 10% by weight or more, preferably 50% by weight or more, and more preferably 90% by weight or more.
  • the average molecular weight of the polyorganosiloxane is less than 100,000, the cohesive force after the adhesive layer is cured is low, and adhesive residue may be generated when peeling off from the lead frame force. . Further, when the average molecular weight of the polyorganosiloxane exceeds 1,500,000, the solubility of the polyorganosiloxane in the organic solvent is reduced when preparing the silicone-based pressure-sensitive adhesive, and the uniformity is reduced. It may not be possible to obtain a suitable pressure-sensitive adhesive, which makes it difficult to form a uniform adhesive layer on a heat-resistant substrate. If the thickness of the adhesive layer becomes non-uniform, the adhesion between the mask sheet and the lead frame is partially reduced, so that mold flash is likely to occur in the sealing process. It is not preferable.
  • the average molecular weight of the polyalkylhydrogensiloxane is 500 to 100,000. It is preferred that If the average molecular weight of the polyalkylhydrogensiloxane is less than 500, the reactivity when mixed with the polyalkylalkenylsiloxane, which is the main component, becomes too high, and the adhesive is applied to the heat-resistant base material. There is a possibility that the hardening reaction proceeds beforehand, and it becomes difficult to form a uniform adhesive layer.
  • the average molecular weight of the polyalkylhydrogensiloxane exceeds 10,000, the reactivity with the polyalkylalkenylsiloxane is too low, and the cohesive force after the adhesive layer is cured. And the adhesive may be left when peeling off from the lead frame.
  • the dynamic modulus of elasticity at 1 5 0 ⁇ 2 0 0 ° C of the adhesive layer is l. It is necessary that the O xl is 0 4 P a or more.
  • the adhesive layer absorbs ultrasonic waves during the wire-to-bonding process, and Vibration may cause wire bonding failure.
  • the adhesive layer has the above structure, sufficient adhesive force can be exerted on the adhesive layer of the mask sheet even at 150 to 200 ° C., and a semiconductor device such as QFN is assembled.
  • the peeling of the lead frame and the mask sheet in the resin sealing step when erecting can be suppressed, and mold flash can be prevented.
  • the silicone-based pressure-sensitive adhesive may contain an inorganic or organic filler for the purpose of adjusting the coefficient of thermal expansion and thermal conductivity or controlling surface exposure and adhesion.
  • inorganic fillers include crushed silica, fused silica, alumina, titanium oxide, beryllium oxide, magnesium oxide, calcium carbonate, titanium nitride, silicon nitride, boron nitride, titanium boride, tungsten boride, silicon carbide, and carbonized carbon.
  • organic fillers include polyimide, polyamideimide, polyesteretherketone, polyetherimide, polyesterimide, nylon, silicone, and the like.
  • the amount of these fillers is 1 to 500 parts by weight, preferably 3 to 200 parts by weight, and more preferably 100 to 100 parts by weight of the silicone resin constituting the adhesive layer. It is in the range of 5 to 100 parts by weight.
  • a method of laminating the adhesive layer on the heat-resistant film there is a casting method in which a solution of the silicone-based adhesive is directly applied on the heat-resistant film and dried, and a method of temporarily applying the silicone-based adhesive on the release film.
  • a laminating method is used in which a solution is applied, dried, and the formed adhesive layer is transferred onto a heat-resistant film.
  • the thickness of the adhesive layer is generally set in a range of 1 to 30 m.
  • a protective film can be provided on the adhesive layer as needed.
  • any film may be used as long as it has a release property.
  • a film such as polyester, polyethylene, polypropylene, or polyethylene terephthalate may be used.
  • FIG. 2 is a schematic plan view of the lead frame as viewed from the side on which the semiconductor element is mounted.
  • Figs. 3 (a) to 3 (f) show the production of a QFN from the lead frame shown in Fig. 2.
  • FIG. 3 is a process drawing illustrating a method, and is a schematic cross-sectional view when the lead frame is cut along the line ⁇ - ⁇ ′ of FIG.
  • the lead frame 20 shown in FIG. 2 is prepared.
  • the lead frame 20 includes a plurality of island-shaped semiconductor element mounting portions (die pad portions) 21 on which semiconductor elements such as IC chips are mounted, and a number of leads 22 are provided along the outer periphery of each semiconductor element mounting portion 21. It was done.
  • the mask sheet 10 of the present invention is stuck on one side of the lead frame 20 so that the adhesive layer side is the lead frame side.
  • the bonding is preferably performed by a laminating method or the like.
  • a heat-resistant film is bonded to a lead frame via an adhesive layer formed by curing a silicone-based adhesive by heating under pressure.
  • the semiconductor element 30 such as an IC chip is attached to the semiconductor element mounting portion 21 of the lead frame 20 from the side where the mask sheet 10 is not adhered. Mounted using a touch agent (not shown).
  • the semiconductor element 30 and the leads 22 of the lead frame 20 are electrically connected via a bonding wire 31 such as a gold wire.
  • the semiconductor device being manufactured (FIG. 3 (c)) is placed in a mold, and the encapsulating resin (molding agent) is used.
  • the semiconductor element 30 is sealed with a sealing resin 40 by transfer molding or the like.
  • a mixed solution of polyalkylalkenylsiloxane and polyalkylhydrogensiloxane (X40-3103, Shin-Etsu Chemical Co., Ltd.) and a platinum catalyst solution (PL50T, Shin-Etsu Chemical Co., Ltd.) are mixed at a weight ratio of 100: 1. did.
  • Polydimethylsiloxane (KR 120, manufactured by Shin-Etsu Chemical Co., Ltd.) and benzyl oxide (Niva-B, manufactured by NOF Corporation) were mixed at a weight ratio of 100: 1.
  • a polyimide film (thickness: 25 jum) with a T g of 490 ° C and a linear expansion coefficient of 12 ppm / ° C with a Tg of 490 ° C and 150-200 ° C is used.
  • the coating solution was applied so that the thickness after drying became 8 ⁇ m, and dried at 160 ° C. for 15 minutes to obtain a mask sheet.
  • Isocyanate (Coronate L-140, manufactured by Nippon Polyurethane) was mixed with an acryl copolymer (SK Dyne 1131B, manufactured by Soken Kagaku) at a weight ratio of 100: 1. (Preparation of mask sheet)
  • Tg 490 ° C, 150-200 ° C with linear expansion coefficient of 12 ppm / ° C
  • a polyimide film thickness 25 ⁇ m
  • Epoxy tree flum (Ebikoto 828, Yuka Shell Co., Ltd.), epoxy curing agent (Laytop P SM4261, Gunei Chemical Co., Ltd.), acrylonitrile-butadiene copolymer (Nippol 1001, Nippon Zeon Co., Ltd.) The mixture was mixed at a ratio of 40:30:30.
  • a polyimide film (thickness: 25 ⁇ m) with a Tg of 490 ° C and a linear expansion coefficient of 12 ppm Z'C at a temperature of 150 to 200 ° C is used as a support, and the coating solution for forming the adhesive layer is placed on it.
  • the coating solution for forming the adhesive layer is placed on it.
  • a mixed solution of polyalkylalkenylsiloxane and polyalkylhydrogensiloxane (X40-3103, manufactured by Shin-Etsu Chemical Co., Ltd.) and a platinum catalyst solution (PL50T, manufactured by Shin-Etsu Chemical Co., Ltd.) were mixed at a weight ratio of 100: 1.
  • a polyethylene terephthalate film (thickness: 25 m) with a Tg of 73 ° C and a linear expansion coefficient of 60 ppm / ° C at a temperature of 150 ° C to 200 ° C is used as the support, on which the above adhesive layer is formed.
  • the coating liquid for application was applied to a thickness of 8 m after drying, and dried at 130 ° C. for 5 minutes to prepare a mask sheet.
  • the weight loss rate of the adhesive layer in the mask sheets prepared in Examples 1 and 2 and Comparative Examples 1 to 3 was measured as follows.
  • the adhesive layer was dried or hardened to prepare a Teflon (registered trademark) sheet with an adhesive layer. After that, only the adhesive layer was peeled off, and the peeled adhesive layer was measured with a differential thermal balance (manufactured by Seiko Instruments Inc.,
  • the mask sheets prepared in Examples 1 and 2 above and Comparative Examples 1 to 3 were mounted on a QFN lead frame (Au—Pd—Ni plating Cu lead frame having an outer dimension of 200 ⁇ 60 mm, an 8 ⁇ 32 matrix arrangement, (A package size of 5 ⁇ 5 mm, resin-encapsulated area of 180 ⁇ 40 mm), and cut into a size of the QFN lead frame to prepare a film laminate.
  • This film laminate was used as a warp characteristic evaluation sample.
  • the mask sheets prepared in Examples 1 and 2 and Comparative Examples 1 to 3 were mounted on a QFN lead frame (Au—Pd—Ni plating) with an outer dimension of 200 ⁇ 60 mm, and a matrix array of 8 ⁇ 32 pieces. , Package size 5 x 5 mm. Resin-sealed area 180 x 40 mm). Then, a die chip (3x3mm, thickness 0.4mm) of aluminum deposition is attached to the die pad of the lead frame with an epoxy die attach agent, and the temperature is measured with a wire bonder (FBI31, manufactured by Kaijo). : 180 ° C, frequency: 60kHz, load: 150gf, processing speed: 10ms / pin. The lead pin tip and the dummy chip were electrically connected by one gold wire. The 256 packages obtained were inspected, and the number of packages where the lead-side bonding failure occurred was detected as the number of occurrences of wire-bonding failure.
  • a wire bonder FBI31, manufactured by Kaijo
  • the resin was sealed by transfer molding (mold molding). After that, the mask sheet is peeled off from the resin sealing material, and the mask of the resin sealing material is removed. By observing the sheet surface, the number of packages in which the sealing resin leaked and adhered to the lead bin portion was confirmed. Then, out of the 256 packages, the number of failures caused by leakage of the sealing resin was detected as the number of mold flashes.
  • the mask sheet After sealing the dummy chip with a molding agent as in the case of the mold flash evaluation, the mask sheet was peeled off from the lead frame at a peel speed of 500 mm / min. Inspect the packages after peeling off the mask sheet. The number of packages with adhesive on the lead external connection part (the surface of the lead to which the mask sheet is adhered) is regarded as the number of remaining glue. Detected.
  • Table 1 shows the evaluation results obtained in Examples 1 and 2 and Comparative Examples 1 to 3.
  • TSR-152 white solvent
  • CR-51 average molecular weight: 1300, manufactured by GE Toshiba Silicone Co., Ltd.
  • Example 4 the above-mentioned adhesive was applied to the same polyimide film as in Example 1 so that the thickness after drying was 8 ⁇ m, to form an adhesive layer. Thereafter, the adhesive layer was dried and cured by heating at 160 ° C. for 15 minutes to obtain a mask sheet of the present invention.
  • Example 4
  • TSR-1516 solid content concentration 60%, manufactured by GE Toshiba Silicone Co., Ltd.
  • polyalkylhydrogensiloxane CR-50, average molecular weight 2000 And GE Toshiba Silicone Co., Ltd.
  • the above-mentioned adhesive was applied to the same polyimide film as in Example 1 so that the thickness after drying was 8 ⁇ m, to form an adhesive layer. Thereafter, the adhesive layer was dried and cured by heating at 160 ° C. for 15 minutes to obtain a mask sheet of the present invention.
  • a mixture of polydimethylsiloxane (KR-101-10, average molecular weight 240,000, Shin-Etsu Gakusha Co., Ltd.) and benzylboxoxide (Niver B, Nippon Oil & Fat Co., Ltd.) at a weight ratio of 100: 1 is mixed.
  • a coating liquid for forming an adhesive layer containing an oxide-curable silicone-based pressure-sensitive adhesive was prepared.
  • the adhesive layer-forming coating liquid was applied on the same polyimide film as in Example 1 so that the thickness after drying was 8 m to form an adhesive layer.
  • the adhesive layer was dried and cured by heating for 15 minutes to obtain a mask sheet of the present invention.
  • the average molecular weight of the silicone resin in the coating solution for forming an adhesive layer was measured as follows. That is, a 0.2% by weight silicone resin solution was prepared using tetrahydrofuran as a solvent, and KF-806L (manufactured by Showa Denko KK) was connected in series to a resin separation column using a GPC (gel permeation chromatography) apparatus. The measurement was performed by arranging two of them, and the average molecular weight was determined.
  • the adhesive obtained in each of Examples 3 to 5 and Comparative Examples 1 and 2 was coated on a Teflon (registered trademark) sheet having a smooth surface so as to have a thickness of lmm to form an adhesive layer,
  • the adhesive layer was dried or cured under the same conditions as when the mask sheet was produced in each of the examples and comparative examples, to produce a Teflon (registered trademark) sheet with an adhesive layer.
  • the obtained sample is cut into a disk with a diameter of 7 mm, and the frequency is set to 1 ⁇ , the heating rate is set to 3 ° C / min, and the temperature range is set to 150 to 200 using an elastic modulus measuring device (Rheostress, manufactured by Haake).
  • the dynamic elastic modulus of the pressure-sensitive adhesive layer was measured at a temperature of ° C and a load of 3N.
  • Table 2 shows the evaluation results obtained in Examples 3 to 5 and Comparative Examples 1 and 2.
  • the dynamic elastic modulus shows the minimum value of the dynamic elastic modulus of the pressure-sensitive adhesive layer measured at 150 to 200 ° C.
  • an adhesive layer was formed using a silicone-based pressure-sensitive adhesive containing a polyorganosiloxane having an average molecular weight of 10,000 to 1,500,000, and the pressure-sensitive adhesive layer was cured at 150 to 200 ° C.
  • the weight loss rate of the obtained adhesive layer was as small as 0.8 to 3.2%.
  • the adhesive layer is formed using an acrylic pressure-sensitive adhesive, and the dynamic elastic modulus of the adhesive layer at 150 to 200 ° C. is less than 1.0 ⁇ 10 4 Pa.
  • the weight loss rate of the adhesive layer was as large as 5 or 6%, and evaluation was performed using the obtained mask sheet. Glue residue occurred.
  • the mask sheet of the present invention Since the mask sheet of the present invention has the above-described configuration, it has excellent heat resistance, a small amount of decomposed substances is not volatilized even in the heat history during curing of the die attach agent, and the lead frame is not contaminated. As a result, high connection reliability between the semiconductor chip and the lead frame can be obtained. Also, since the warpage of the lead frame is small, poor positioning is unlikely to occur. Furthermore, it is possible to suppress the "mold flash" in which the sealing resin leaks from the mask tape, and it is possible to stably produce a semiconductor package such as QFN to suppress adhesive residue of the adhesive. Therefore, by using the mask sheet of the present invention, a semiconductor device can be efficiently assembled.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un masque permettant de produire de façon stable un boîtier à semiconducteur tel qu'un boîtier QFN, sans avoir à racler un excès de résine de scellement et un résidu de colle d'un adhésif lors de l'assemblage d'un dispositif à semiconducteur. Ce masque, qui adhère de manière détachable à un châssis de brochage, comprend une couche adhésive constituée d'un adhésif en silicone, appliqué sur un film thermorésistant présentant une température de transition vitreuse supérieure ou égale à 152 °C et un coefficient d'expansion linéaire de 10-50 ppm/ °C à 150-200 °C, et présente une réduction en poids inférieure ou égale à 5 % lorsque ce masque chauffé pendant 1 heure à 80 °C. Un adhésif en silicone préférable est constitué de polyalkylalkenylsiloxane et de siloxane d'hydrogène polyalkyle. Si ce masque est utilisé pour l'assemblage d'un dispositif à semiconducteur, ledit masque est lié par pression au châssis de brochage afin de former un dispositif à semiconducteur, puis délié.
PCT/JP2002/002573 2001-03-21 2002-03-19 Masque pour l'assemblage d'un dispositif a semiconducteur et procede d'assemblage dudit dispositif WO2002075809A1 (fr)

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KR20037012122A KR100572191B1 (ko) 2001-03-21 2002-03-19 반도체 장치 조립용 마스크 시트 및 반도체 장치 조립 방법

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JP2001-81098 2001-03-21
JP2001081098A JP4002736B2 (ja) 2001-03-21 2001-03-21 半導体装置組立用マスクシートおよび半導体装置の組み立て方法
JP2001146606A JP4002739B2 (ja) 2001-05-16 2001-05-16 半導体装置製造用粘着シート
JP2001-146606 2001-05-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070222051A1 (en) * 2006-03-16 2007-09-27 Kabushiki Kaisha Toshiba Stacked semiconductor device
CN115491136A (zh) * 2022-09-21 2022-12-20 江门市优彼思半导体材料有限公司 一种掩模带及其制备方法

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KR100635053B1 (ko) 2005-06-21 2006-10-16 도레이새한 주식회사 전자부품용 접착테이프
KR100910672B1 (ko) * 2007-08-03 2009-08-04 도레이새한 주식회사 내열성 점착시트
CN101585666B (zh) * 2009-06-22 2011-08-31 浙江新康药用玻璃有限公司 一种药用玻璃瓶的内表面涂膜工艺
CN106816202B (zh) * 2017-02-15 2018-12-04 山东圣泉新材料股份有限公司 一种石墨烯改性导电银浆及其制备方法
KR102032767B1 (ko) * 2017-05-12 2019-10-17 (주)인랩 Qfn 반도체 패키지, 이의 제조방법 및 qfn 반도체 패키지 제조용 마스크 시트

Citations (1)

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JP2001024001A (ja) * 1999-07-12 2001-01-26 Matsushita Electronics Industry Corp 樹脂封止型半導体装置の製造方法及びリードフレーム

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2001024001A (ja) * 1999-07-12 2001-01-26 Matsushita Electronics Industry Corp 樹脂封止型半導体装置の製造方法及びリードフレーム

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070222051A1 (en) * 2006-03-16 2007-09-27 Kabushiki Kaisha Toshiba Stacked semiconductor device
US7994620B2 (en) * 2006-03-16 2011-08-09 Kabushiki Kaisha Toshiba Stacked semiconductor device
US8227296B2 (en) 2006-03-16 2012-07-24 Kabushiki Kaisha Toshiba Stacked semiconductor device
CN115491136A (zh) * 2022-09-21 2022-12-20 江门市优彼思半导体材料有限公司 一种掩模带及其制备方法

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TW540131B (en) 2003-07-01
KR20030093247A (ko) 2003-12-06
CN1280899C (zh) 2006-10-18
CN1498420A (zh) 2004-05-19
KR100572191B1 (ko) 2006-04-18

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