KR20040084680A - 반도체 장치 제조용 접착 시트 및 그것을 이용한 반도체장치 및 제조 방법 - Google Patents
반도체 장치 제조용 접착 시트 및 그것을 이용한 반도체장치 및 제조 방법 Download PDFInfo
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- KR20040084680A KR20040084680A KR1020040019211A KR20040019211A KR20040084680A KR 20040084680 A KR20040084680 A KR 20040084680A KR 1020040019211 A KR1020040019211 A KR 1020040019211A KR 20040019211 A KR20040019211 A KR 20040019211A KR 20040084680 A KR20040084680 A KR 20040084680A
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- South Korea
- Prior art keywords
- semiconductor device
- adhesive sheet
- adhesive
- resin component
- manufacturing
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
실시예1 | 실시예2 | 실시예3 | 실시예4 | 실시예5 | 실시예6 | ||||
1층째 | 2층째 | 1층째 | 2층째 | ||||||
열경화성 수지 성분(a) | 에폭시수지(대일본잉크화학공업사 제품 HP-7200) | 40 | 40 | 40 | |||||
페놀수지(일본화약사 제품 TPM) | 20 | 20 | 20 | ||||||
에폭시수지(자판에폭시레진사 제품 에피코트 828) | 30 | 30 | |||||||
페놀수지(소화고분자사 제품 CKM 2400) | 30 | 30 | |||||||
열가소성 수지 성분(b) | 아크릴로니트릴부타디엔공중합체수지(일본제온사 제품 Nipol 1001중량평균분자량 30-,000) | 40 | 40 | 40 | |||||
폴리아미드수지(헨켈자판사 제품 마크로멜트 6238중량평균분자량 40-,000) | 40 | 40 | |||||||
폴리이미드수지(도모에가와 제지소제품 실록산함유방향족폴리이미드중량평균분자량 50-,000) | 100 | ||||||||
재박리성 부여 성분(c) | 변성실리콘오일(도우레 다우 코닝사 제품 SF8413) | 3.5 | 0.3 | 3.5 | |||||
변성실리콘오일(신에츠실리콘사 제품 KF105) | 3 | 0.2 | |||||||
변성실리콘오일(신에츠실리콘사 제품 KF861) | 3 | ||||||||
기타 | 경화촉진제(시코쿠카세이사 제품2-에틸4-메틸이미다졸) | 1 | 1 | 1 | 1 | 1 |
비교예 1 | 비교예 2 | ||
열경화성 수지 성분(a) | 에폭시수지(대일본잉크화학공업사 제품 HP-7200) | 40 | |
페놀수지(일본화약사 제품 TPM) | 20 | ||
에폭시수지(자판에폭시레진사 제품 에피코트 828) | 30 | ||
페놀수지(소화고분자사 제품 CKM 2400) | 30 | ||
열 가소성 수지 성분(b) | 아크릴로니트릴부타디엔공중합체수지(일본제온사 제품 Nipol 1001중량평균분자량 30-,000) | 40 | |
폴리아미드수지(헨켈자판사 제품 마크로멜트 6238중량평균분자량 40-,000) | 40 | ||
폴리이미드수지(도모에가와 제지소제품 실록산함유방향족폴리이미드중량평균분자량 50-,000) | |||
재박리성 부여 성분(c) | 변성실리콘오일(도우레 다우 코닝사 제품 SF8413)) | ||
변성실리콘오일(신에츠실리콘사 제품 KF105) | |||
변성실리콘오일(신에츠실리콘사 제품 KF861) | |||
기타 | 경화촉진제(시코쿠카세이사 제품 2-에틸4-메틸이미다졸) | 1 | 1 |
저장탄성율(MPa) | 와이어본딩불량(개) | 몰드플래시(개) | 잔여페이스트발생(개) | 접착강도(N/cm) | |||||
플라즈마없음 | 플라즈마있음 | 플라즈마없음 | 플라즈마있음 | 플라즈마없음 | 플라즈마있음 | 플라즈마없음 | 플라즈마있음 | ||
실시예1 | 30 | 0 | 0 | 0 | 0 | 0 | 0 | 0.78 | 0.29 |
실시예2 | 40 | 0 | 0 | 0 | 0 | 0 | 0 | 0.59 | 0.39 |
실시예3 | 30 | 0 | 0 | 0 | 0 | 0 | 0 | 0.59 | 0.39 |
실시예4 | 45 | 0 | 0 | 0 | 0 | 0 | 0 | 0.34 | 0.25 |
실시예5 | 30 | 0 | 0 | 0 | 0 | 0 | 0 | 0.49 | 0.39 |
실시예6 | 50 | 0 | 0 | 0 | 0 | 0 | 0 | 0.29 | 0.29 |
비교예1 | 30 | 0 | 0 | 0 | 0 | 0 | 25 | 2.9 | 0.49 |
비교예2 | 40- | 0 | 0 | 0 | 0 | 0 | 39 | 0.59 | 0.49 |
Claims (17)
- 리드 플레임 또는 배선 기판에 박리 가능하게 점착되는 반도체 장치 제조용 접착 시트에 있어서,내열성 기재와 접착제층을 갖는 적층체를 가지며, 상기 접착제층이 열가소성 수지 성분(b) 및 재박리성 부여 성분(c)을 함유하는 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 상기 접착제층이 열경화성 수지 성분(a)을 함유하는 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 상기 재박리성 부여 성분(c)이 실리콘 오일인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 상기 재박리성 부여 성분(c)이 반응성을 가지며, 열가소성 수지 성분(b)과 화학적으로 결합 상태에 있는 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 2 항에 있어서, 상기 재박리성 부여 성분(c)이 반응성을 가지며, 열경화성 수지 성분(a)과 열가소성 수지 성분(b)의 혼합물과 화학적으로 결합 상태에 있는 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 동 또는 금도금한 동에 접착하고, 경화후의 150~200℃에서의 박리력이 0.03~5N/cm인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 2 항에 있어서, 상기 접착제층은, 재박리성 부여 성분(c)과 열경화성 수지 성분(a)과 열가소성 수지 성분(b)과의 혼합물을 성막하여 이루어진 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 2 항에 있어서, 상기 접착제층의 열경화성 수지 성분(a) 및 열가소성 수지 성분(b)의 중량 비율(a)/(b)가 3.5 이하, ((a)+(b))/(c)가 6~2,000인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 2 항에 있어서, 재박리성 부여 성분(c)이 열경화성 수지 성분(a)과 열가소성 수지 성분(b)으로 이루어지는 접착제층의 표면에 성막된 것임을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 열가소성 수지 성분(b)의 중량 평균 분자량이 2,000~1,000,O00인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 상기 접착제층의 경화 후의 저장 탄성율이 150~250℃에 있어서 1MPa 이상인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 상기 내열성 기재는 글래스 전이 온도가 150℃ 이상이고, 또한 열팽창 계수가 5~50ppm/℃의 내열성 수지 필름인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 상기 내열성 기재는 열팽창 계수가 5~50ppm/℃의 금속박인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 상기 접착제층의 일면에 보호 필름이 설치되어 있는 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항에 있어서, 동 또는 금도금한 동과 접착시켰을 때의 접착 강도가 0.098N/cm 이상인 것을 특징으로 하는 반도체 장치 제조용 접착 시트.
- 제 1 항 내지 제 15 항 중 어느 한 항에 기재된 반도체 장치 제조용 접착 시트를 이용하여 제조된 것을 특징으로 하는 반도체 장치.
- 제 1 항 내지 제 15 항 중 어느 한 항에 기재된 반도체 장치 제조용 접착 시트를 이용하여 제조하는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP2003083795A JP4421204B2 (ja) | 2003-03-25 | 2003-03-25 | 半導体装置製造用接着シート及びそれを用いた半導体装置並びに製造方法 |
JPJP-P-2003-00083795 | 2003-03-25 |
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KR (1) | KR100596186B1 (ko) |
CN (1) | CN100492586C (ko) |
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JP4863690B2 (ja) * | 2005-10-31 | 2012-01-25 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及び半導体装置並びにその製造方法 |
JP4654062B2 (ja) * | 2005-03-30 | 2011-03-16 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP4538398B2 (ja) * | 2005-10-31 | 2010-09-08 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP4505649B2 (ja) * | 2006-03-23 | 2010-07-21 | フジコピアン株式会社 | 固定シート |
JP2009158817A (ja) * | 2007-12-27 | 2009-07-16 | Tomoegawa Paper Co Ltd | Qfn用熱硬化型樹脂組成物及びそれを用いたqfn用接着シート |
KR20110087547A (ko) * | 2010-01-26 | 2011-08-03 | 도레이첨단소재 주식회사 | 내열성 점착시트를 이용한 반도체 장치의 제조방법 |
JP5714349B2 (ja) * | 2011-01-31 | 2015-05-07 | ニッタ株式会社 | 易剥離性粘着シートおよび易剥離性粘着テープ |
US10177022B2 (en) * | 2014-08-08 | 2019-01-08 | Toray Industries, Inc. | Adhesive for temporary bonding, adhesive layer, wafer work piece and method for manufacturing semiconductor device using same, rework solvent, polyimide copolymer, polyimide mixed resin, and resin composition |
TWI732764B (zh) * | 2015-06-01 | 2021-07-11 | 日商富士軟片股份有限公司 | 暫時接著劑、接著膜、接著性支持體、積層體及接著劑套組 |
CN108922854B (zh) * | 2018-06-14 | 2020-06-05 | 中国电子科技集团公司第二十四研究所 | 一种用于封装硅基芯片的瞬态电路封装结构实现方法 |
JP7187906B2 (ja) * | 2018-09-10 | 2022-12-13 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法 |
CN114867810A (zh) * | 2019-12-23 | 2022-08-05 | 日产化学株式会社 | 粘接剂组合物、层叠体及其制造方法、层叠体的剥离方法以及半导体形成基板的加工方法 |
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TW200501208A (en) | 2005-01-01 |
JP2004296549A (ja) | 2004-10-21 |
CN100492586C (zh) | 2009-05-27 |
KR100596186B1 (ko) | 2006-07-03 |
CN1622279A (zh) | 2005-06-01 |
JP4421204B2 (ja) | 2010-02-24 |
HK1073178A1 (en) | 2005-09-23 |
MY140439A (en) | 2009-12-31 |
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