CN1622279A - 半导体器件制造用粘接片及用此粘接片的半导体器件和制法 - Google Patents
半导体器件制造用粘接片及用此粘接片的半导体器件和制法 Download PDFInfo
- Publication number
- CN1622279A CN1622279A CNA2004100387951A CN200410038795A CN1622279A CN 1622279 A CN1622279 A CN 1622279A CN A2004100387951 A CNA2004100387951 A CN A2004100387951A CN 200410038795 A CN200410038795 A CN 200410038795A CN 1622279 A CN1622279 A CN 1622279A
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- adhesive sheet
- device manufacturing
- resin composition
- bond layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 137
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 135
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 41
- 239000011342 resin composition Substances 0.000 claims description 70
- 239000000203 mixture Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 32
- 229920001187 thermosetting polymer Polymers 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 229920006015 heat resistant resin Polymers 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 13
- 229920002545 silicone oil Polymers 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 230000009477 glass transition Effects 0.000 claims description 6
- 230000009257 reactivity Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000003475 lamination Methods 0.000 abstract description 2
- 238000011010 flushing procedure Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000007767 bonding agent Substances 0.000 description 35
- 238000003825 pressing Methods 0.000 description 30
- 229920005989 resin Polymers 0.000 description 27
- 239000011347 resin Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 12
- 230000002950 deficient Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 9
- 238000001723 curing Methods 0.000 description 8
- 239000003921 oil Substances 0.000 description 8
- 238000005266 casting Methods 0.000 description 7
- -1 diallyl phthalate ester Chemical class 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 229920001568 phenolic resin Polymers 0.000 description 6
- 238000004382 potting Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000004952 Polyamide Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 229920002647 polyamide Polymers 0.000 description 5
- 229920000459 Nitrile rubber Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 206010013786 Dry skin Diseases 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 3
- 229920006026 co-polymeric resin Polymers 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000004512 die casting Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- BNWPUUZJGBXAFM-UHFFFAOYSA-N azane oxalonitrile Chemical compound N.N#CC#N BNWPUUZJGBXAFM-UHFFFAOYSA-N 0.000 description 1
- KVBYPTUGEKVEIJ-UHFFFAOYSA-N benzene-1,3-diol;formaldehyde Chemical compound O=C.OC1=CC=CC(O)=C1 KVBYPTUGEKVEIJ-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229920001935 styrene-ethylene-butadiene-styrene Polymers 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
Abstract
一种具有含耐热性基层材料和粘接剂层的层压体,在粘接剂层含有热塑性树脂成分(b)和再剥离性附加成分(c)的引线框架或布线基板上可剥离粘贴的半导体器件制造用粘接片,在用于制造QFN等半导体器件的情况下,维持了良好的导线焊接性、模压毛边特性,并防止粘接剂转移,从而防止半导体器件的不合格化。
Description
技术领域
本发明涉及一种可剥离地粘贴在引线框架上、在制造QFN等半导体器件(半导体封装)的情况下适合使用的半导体器件制造用粘接片。
背景技术
近年来,随着携带型个人计算机、携带电话等电子机器的小型化、多功能化,一方面需要构成电子机器的电子部件的小型化、高集成化,另一方面,需要电子部件的高密度封装技术。在这样的背景下,替代现有的QFP(方形扁平封装)和SOP(小外廓封装)等四周封装型的半导体器件,以能高密度封装的CSP(芯片级封装)等表面封装型的半导体器件正受到关注。此外,在CSP中特别是QFN(方形扁平无引线封装),由于能利用适合现有的半导体器件的制造技术制造,因此主要适合作为100插脚以下的少端子型半导体器件使用。
以前,作为QFN的制造方法,已知的是下述简要方法。
首先,在粘接片粘贴工序中,在引线框架的一个表面上粘贴粘接片,然后,在压模贴装工序中,在引线框架内形成的多个半导体元件承载部(压模垫)上分别承载IC芯片等半导体元件。然后,在导线键合工序中,通过焊接导线,将沿引线框架的各个半导体元件承载部的外边缘设置的多个引线和半导体元件电连接。然后,在树脂密封工序中,利用密封树脂,密封在引线框架上承载的半导体元件,此后,在粘接片剥离工序中,通过从引线框架上剥离粘接片,就能形成排列有多个QFN的QFN单元。最后,在划片工序中,通过沿各个QFN外边缘对此QFN单元划片,就能同时制造多个QFN。
作为此制造方法中使用的粘接片的粘接剂,通常为环氧树脂/NBR类粘接剂和硅氧烷类粘接剂(例如,参照特开平6-181227号公报)。
但是,如果使用硅氧烷类粘接剂,则存在导线焊接性差、另外容易发生所谓的模压毛边的问题。
因此,在导线焊接工序之前,通过实施等离子体清洗,去除表面上粘附的杂质,通常能够提高导线焊接性。此时,通过等离子体清洗使暴露出的粘接片的粘接剂层的表面粗糙化,在再次剥离粘接片时,就会在半导体封装的连接端子、浇铸树脂表面上发生粘接剂移动(以下有时表述为“粘接剂残留”)。在发生这种粘接剂残留的情况下,由于浇铸树脂及其附近的引线的外部连接端子部分粘附有粘接剂,在布线基板上封装制造的半导体器件时,就会担心产生连接不合格。
发明内容
为了解决上述问题,本发明的目的在于提供一种半导体器件制造用粘接片、使用此粘接片的半导体器件及其制造方法,在用于制造QFN等半导体器件的情况下,该半导体器件制造用粘接片能够保持优良的导线焊接性、模压毛边特性,可以防止粘接剂残留,并能够防止半导体器件的不合格。
本发明的半导体器件制造用粘接片(以下,简称为“粘接片”)是一种在耐热性基层材料的一个表面上层压粘接剂层、在引线框架或布线基板之上可剥离粘贴的粘接片,其特征在于,上述粘接剂层是一种热固性树脂成分(a)和热塑性树脂成分(b)的混合物、或单独的热塑性树脂成分(b)与给予再剥离性成分(c)混合了的粘接剂。
优选硅油作为给予再剥离性成分(c)。
而且,希望给予再剥离性成分(c)具有反应性,与热塑性树脂成分(b)或热固性树脂成分(a)和热塑性树脂成分(b)的混合物处于化学结合状态。
优选粘贴在铜或镀金铜上,且粘接片固化后在150-200℃的剥离力为0.03-5N/cm。
粘接剂层是使给予再剥离性成分(c)与热固性树脂成分(a)和热塑性树脂成分(b)的混合物成膜而形成的,或者,给予再剥离性成分(c)优选在由热固性树脂成分(a)和热塑性树脂成分(b)组成的粘接剂层的表面上成膜。
粘接剂层的热固性树脂成分(a)和热塑性树脂成分(b)的重量比(a)/(b)优选为3.5或3.5以下,((a)+(b))/(c)优选为6-2000。
优选热塑性树脂成分(b)的重均分子量为2000-1000000。
优选粘接剂层固化之后的储藏弹性模量在150-250℃时在1或1MPa以上。
优选耐热性基层材料为玻璃化转变温度在150℃或150℃以上,且热膨胀系数为5-50ppm/℃的耐热性树脂膜,或者是热膨胀系数为5-50ppm/℃的金属箔。
在粘接剂层的单面之上优选设置保护膜。
优选与铜或镀金铜粘贴时的粘接强度为0.098N/cm或0.098N/cm以上。
本发明的半导体器件,其特征在于,采用上述半导体器件制造用粘接片来制造。
本发明的半导体器件的制造方法,其特征在于,采用上述半导体器件制造用粘接片来进行制造。
附图的简要说明
图1是通过表示采用本发明的半导体器件制造用粘接片来制造QFN时适用的引线框架的结构,从承载半导体元件的一侧观察的平面图。
图2A是使用本发明的半导体器件制造用粘接片来制造QFN的方法的一个实例的粘接片粘贴工序中沿图1的A-A’线截断的放大剖面简图。
图2B是使用本发明的半导体器件制造用粘接片来制造QFN的方法的一个实例的压模贴装工序中沿图1的A-A’线截断的放大剖面简图。
图2C是使用本发明的半导体器件制造用粘接片来制造QFN的方法的一个实例的导线焊接工序中沿图1的A-A’线截断的放大剖面简图。
图2D是使用本发明的半导体器件制造用粘接片来制造QFN的方法的一个实例的树脂封装工序中沿图1的A-A’线截断的放大剖面简图。
图2E是使用本发明的半导体器件制造用粘接片来制造QFN的方法的一个实例的粘接片剥离工序中沿图1的A-A’线截断的放大剖面简图。
图2F是使用本发明的半导体器件制造用粘接片来制造QFN的方法的一个实例的晶片划片工序中沿图1的A-A’线截断的放大剖面简图。
用于实施发明的最佳方式
以下,详细描述本发明。
本发明的粘接片为在耐热性基层材料的一个表面上具有含有热塑性树脂成分(b)或者还含有热固性树脂成分(a)和给予再剥离性成分(c)的粘接剂层的结构。
作为耐热性基层材料可以列举出耐热性树脂膜和金属箔等。
当使用本发明的粘接片来制造QFN等半导体器件时,在压模贴装工序、导线焊接工序、树脂封装工序中,粘接片暴露在150-250℃高温下。在采用耐热性树脂膜作为耐热性基层材料的情况下,由于该耐热性树脂膜的热膨胀系数在达到玻璃化转变温度(Tg)或其以上时急剧增加,且与金属制造的引线框架的热膨胀的差异增大,当返回到室温时,就会担心耐热性树脂膜和引线框架产生弯曲。并且,当耐热性树脂膜和引线框架产生弯曲的情况下,在树脂封装工序中,就不能按模具位置所定的插脚来安装引线框架,担心引起位置偏移的不合格。
因此,在采用耐热性树脂膜作为耐热性基层材料的情况下,优选玻璃化转变温度为150℃或150℃以上的耐热性树脂膜,更优选为180℃或180℃以上。
此外,由于期望与金属制造的引线框架的热膨胀差异小,因此优选耐热性树脂膜在150-250℃的热膨胀系数为5-50ppm/℃,更优选为10-30ppm/℃。
作为具有这种特性的耐热性树脂膜,能例举由聚酰亚胺、聚酰胺、聚醚砜、聚苯硫醚、聚醚酮、聚醚醚酮、三乙酰纤维素、聚醚酰亚胺等形成的膜。
此外,即使采用金属箔作为耐热性基层材料,基于与耐热性树脂膜相同的理由,优选金属箔在150-250℃下的热膨胀系数为5-50ppm/℃,更优选为10-30ppm/℃。作为金属,可以是例如由金、银、铜、白金、铝、镁、钛、铬、锰、铁、钴、镍、锌、钯、镉、铟、锡、铅形成的箔,以及以这些金属为主要成分的合金箔或镀有这些的箔。
此外,当使用本发明的粘接片来制造半导体器件时,为了在粘接片剥离工序中防止粘接剂转移,优选耐热性基层材料与粘接剂层的粘接强度Sa、封装树脂和引线框架与粘接剂层的粘接强度Sb之比(粘接强度比)Sa/Sb为1.5或1.5以上。在Sa/Sb不足1.5的情况下,由于在粘接片剥离工序中容易产生粘接剂残留,因此是不希望的。再有,为了使粘接强度比Sa/Sb为1.5或1.5以上,在耐热性树脂膜的情况下,在形成粘接剂层之前,在形成耐热性树脂膜的粘接剂层侧的表面上,最好预先进行如电晕处理、等离子体处理、底涂处理、喷沙等用于提高耐热性树脂膜与粘接剂层的粘接强度Sa这样的处理。此外,在金属箔的情况下,从此方法,分类为压轧金属箔和电解金属箔,但为了使粘接强度比Sa/Sb为1.5或1.5以上,优选在使用电解金属箔的同时在粗糙侧的面上设置粘接剂层并进行调整。此外,即使在电解金属箔中,也特别优选采用电解铜箔。
此外,由粘接剂层和铜或镀金铜形成的引线框架的温度为150-200℃时,优选粘接剂层与引线框架的粘接强度优选在0.098N/cm或0.098N/cm以上。这是因为在0.098N/cm或0.098N/cm以上的情况下,可以说防止模压毛边的性能充分。
粘接剂层以热塑性树脂成分(b)和给予再剥离性成分(c)为必要成分,特别优选具有热固性树脂成分(a)。在这种情况下,优选热固性树脂成分(a)与热塑性树脂成分(b)的重量比(a)/(b)为3.5或3.5以下,(a)/(b)更加优选为0.3-3.5,再优选为0.3-2.5,最好为1-2.5。
在(a)/(b)大于3.5的情况下,由于粘接剂层的可弯曲性降低了,附带经过等离子体清洁工序的粘接片的引线框架,在树脂封装工序中粘接片的粘接力降低,引线框架和粘接片就会部分剥离,产生模压毛边,并且还容易产生粘接剂残留。另一方面,当(a)/(b)小于0.3时,随着弹性模量的降低,由于容易产生导线焊接的不合格,所以也是不希望的。
热固性树脂成分(a)和热塑性树脂成分(b)的混合物或单独的热塑性树脂成分(b)的粘接剂成分与给予再剥离性成分(c)的重量比((a)+(b))/(c)或(b)/(c)优选为6-2000。((a)+(b))/(c)或(b)/(c)更加优选为10-1000。
在((a)+(b))/(c)或(b)/(c)小于6的情况下,由于引线框架与粘接片的粘接力降低了,在树脂封装工序中,引线框架与粘接片就会部分剥离,发生模压毛边,还容易产生粘接剂残留。在((a)+(b))/(c)或(b)/(c)大于2000的情况下,如果使用附带经过等离子体清洁工序的粘接片的引线框架,则引线框架与粘接片的粘接力增加了,所以当再次剥离半导体器件制造用粘接片时,就易产生粘接剂残留。
作为粘接剂层的成分,若含有适量的热固性树脂成分(a),就能够改善导线焊接性、模压毛边特性。作为热固性树脂成分(a)可以采用例举出的尿素树脂、三聚氰胺树脂、苯并胍胺树脂、乙酰胍胺树脂、酚醛树脂、间苯二酚甲醛树脂、二甲苯树脂、呋喃树脂、不饱和聚酯树脂、邻苯二甲酸二烯丙基酯树脂、异氰酸酯树脂、环氧树脂、马来酰亚胺树脂、氰氨(ナジイミド)树脂等。再有,既可以单独使用这些树脂,也可以同时使用2种或2种以上的这些树脂。其中特别是通过含有至少一种环氧树脂和酚醛树脂,可以得到在导线焊接工序的处理温度下具有高弹性模量,同时在树脂封装工序的处理温度下与引线框架的粘接强度高的粘接剂层,因此是优选的。
作为热塑性树脂组分(b),可列举丙烯腈-丁二烯共聚物(NBR)、丙烯腈-丁二烯-苯乙烯树脂(ABS)、苯乙烯-丁二烯-乙烯树脂(SEBS)、苯乙烯-丁二烯-苯乙烯树脂(SBS)、聚丁二烯、聚丙烯腈、聚乙烯醇缩丁醛、聚酰胺、聚酰胺-酰亚胺、聚酰亚胺、聚酯、聚氨酯、聚二甲基硅氧烷等,其中特别是具有酰胺键的聚酰胺、聚酰胺酰亚胺和丙烯腈-丁二烯共聚物树脂的耐热性优良,所以优选。
此外,热塑性树脂成分(b)的重均分子量为2000-1000000,优选为5000-800000,更加优选为10000-500000。假如在此范围之内,就能够提高粘接剂层的凝聚力,并且能够进一步防止粘接片剥离工序中的粘接剂残留。
作为给予再剥离性成分(c),可以列举出硅油、改性硅油。作为硅油,可以列举二甲基聚硅氧烷型、甲基氢聚硅氧烷型、甲基苯基聚硅氧烷型等。改性硅油,作为反应性硅油可以列举氨基改性型、环氧改性型、羧基改性型、甲醇改性型、甲基丙烯酸改性型、巯基改性型、苯酚改性型,作为非反应性硅油可以列举出聚醚改性型、甲基苯乙烯基改性型、烷基改性型、脂肪酸酯改性型、烷氧基改性型、氟改性型等。再有,既可以单独使用这些硅油,也可以同时使用2种或2种以上。
其中特别是反应性硅油,由于通过使得热塑性树脂成分(b)、热固性树脂成分(a)与热塑性树脂成分(b)的混合物成为化学键合状态,当再次剥离时,就不会产生向硅油封装的转移,所以特别优选。
此外,为了调整粘接剂层的热膨胀系数、热传导率、表面皱摺、粘接性等,优选在粘接剂层中添加无机或有机填料。这里,作为无机填料,可以列举由粉碎型二氧化硅,熔融型二氧化硅、氧化铝、氧化钛、氧化铍、氧化镁、碳酸钙、氮化钛、氮化硅、氮化硼、硼化钛、硼化钨、碳化硅、碳化钛、碳化锆、碳化钼、云母、氧化锌、炭黑、氢氧化铝、氢氧化钙、氢氧化镁、三氧化锑等构成的填料,或在它们表面上导入三甲基甲硅烷氧基等物质等。此外,作为有机填料,可以列举由聚酰亚胺、聚酰胺-酰亚胺、聚醚醚酮、聚醚酰亚胺、聚酯酰亚胺、尼龙、硅氧烷树脂等构成的填料。
在用于制造半导体封装的树脂封装工序中,在150-200℃下进行加热的同时,施加5-10GPa的压力,利用树脂密封将半导体元件密封。因此,粘接片的粘接剂层在高温下暴露,结果粘接剂层的粘接力(粘接剂层与引线框架的粘接强度)降低了,因封装树脂的压力,粘接剂层就会从引线框架部分剥离,发生模压毛边的情况,但如果使用本发明的粘接剂层的粘接片,由于粘接剂层的粘接力难以降低,就不容易发生模压毛边。
作为在耐热性基层材料的一个表面上形成粘接剂层的方法,适合的是在耐热性基层材料上直接涂覆粘接剂并进行干燥的浇铸方法,以及在分离性膜上一次涂覆粘接剂并经干燥之后转印到耐热性基层材料上的层压法等。再有,热固性树脂成分(a)、热塑性树脂成分(b)、给予再剥离性成分(c)中的任一种,对于有机溶剂,例如甲苯、二甲苯、氯苯等芳香族类溶剂,丙酮、甲基乙基酮、甲基异丁基酮等酮类溶剂,二甲基甲酰胺、二甲基乙酰胺、N-甲基吡咯烷酮等非质子类极性溶剂,四氢呋喃等的单独或混合物溶解1重量%或1重量%以上,优选溶解5重量%或5重量%以上作成粘接剂涂覆液使用是优选的。
所述粘接剂层利用给予再剥离性成分(c)和热塑性树脂成分(b)或还有热固性树脂成分(a)来调制混合物,除了使这种混合物成膜之外,也可以利用热塑性树脂成分(b)或还有热固性树脂成分(a)来形成粘接剂层,此后,在其表面上形成给予再剥离性成分(c)膜,整体作为粘接剂层。在后一种形成给予再剥离性成分(c)膜的情况下,与预先形成混合物的情况相比,使用还要少量的给予再剥离性成分(c),就能得到再剥离性的功能,所以是优选的。
也可在本发明的粘接片的粘接剂层之上粘贴可剥离的保护膜、在即将制造半导体器件之前剥离保护膜的结构。在此情况下,从制造粘接片直至使用期间,能够防止粘接剂层损伤。作为保护薄膜,只要具有分离特性,可以使用任何膜,可以列举出例如聚酯、聚乙烯、聚丙烯、聚对苯二甲酸乙二醇酯等的薄膜,以及利用硅氧烷树脂或氟化合物对这些薄膜表面进行了可分离处理的薄膜等。
此外,在从150到250℃的整个温度范围内,粘接剂层固化后的储藏弹性模量为1MPa或1MPa以上,优选为10MPa或10MPa以上,更加优选为50MPa或50MPa以上。再有,这里所说的固化后,是指在压模贴装工序中加热处理的状态下的粘接剂层。利用实施例来说明储藏弹性模量的测量条件等。在用于制造半导体包装的导线焊接工序中,为了采用焊接导线来连接半导体元件和引线框架,当在150-250℃下加热该焊接导线的两端并在60-120kHz的超声波下熔融时,位于引线框架之下位置的粘接片的粘接剂层暴露在通过上述加热产生的高温下,就降低了弹性、变得容易吸收超声波,其结果造成引线框架振动,容易发生导线焊接的不合格,但是由具有上述储藏弹性模量的粘接剂层构成的本发明的粘接片的情况下,就很难发生这种问题。为了使储藏弹性模量在1MPa或1MPa以上,例如,也可以将热固性树脂成分(a)/热塑性树脂成分(b)的重量比调整为0.3或0.3以上。
优选在铜或镀金铜上粘贴的粘接片,在固化后150-200℃下的剥离力为0.03-5N/cm。在剥离力小于0.03N/cm的情况下,由于粘接力不足,在浇铸树脂密封时,就会发生模压毛边的不利的情况。另一方面,在超过5N/cm的情况下,在剥离时会发生粘接片损坏等不利情况,从而难于进行剥离。
(半导体器件的制造方法)
下面,参照图1、图2A-2F,说明使用本发明的粘接片制造半导体器件的方法的一例。以下,以制造QFN半导体器件的情况为例进行说明。
首先,准备如图1所示的简略结构的引线框架20。引线框架20具备承载IC芯片等半导体元件的多个岛状半导体元件承载部(压模垫部)21,沿各个半导体元件承载部21的外周设置有多个引线22。然后,如图2A中所示,在粘接片粘贴工序中,在引线框架20的一个表面之上,使本发明的粘接片10粘接剂层(图中省略)侧成为引线框架20侧那样地进行粘贴。
再有,作为将粘接片10粘贴在引线框架20上的方法,适合的是层叠方法等。
然后,如图2B中所示,在压模贴装工序中,在引线框架20的半导体元件承载部21上,采用压模贴装材料(图中省略),从未粘附粘接片10的一侧,装载IC芯片等半导体元件30。
然后,到导线焊接前为止的相关热过程中,从粘接片和压模贴装剂等中产生的逸出气体成分粘附在引线框架上,由于为了防止导线粘接的不合格而产生成品率降低,在实施导线焊接工序之前,对装载粘接片、压模贴装剂、IC芯片的引线框架进行等离子体清洗。
然后,如图2C中所示,在导线焊接工序中,通过金导线等的焊接导线31电连接半导体元件30和引线框架20的引线22。然后,如图2D中所示,在树脂密封工序中,在模具内装载图2C所示的制造过程中的半导体器件,通过使用封装树脂(浇铸材料)压铸(模具成型),利用密封树脂40密封半导体元件30。
然后,如图2E中所示,在粘接片剥离工序中,通过从封装树脂40和引线框架20上剥离粘接片10,就能够形成由多个QFN 50排列成的QFN单元60。最后,如图2F中所示,在划片工序中,通过沿QFN 50的外周切割QFN单元60,就能够制造出多个QFN 50。
这样,通过采用本发明的粘接片10来制造QFN等半导体器件,不仅保持了热固化型粘接剂的导线焊接性、防止模压毛边特性,而且即使在该粘接片经过了等离子体清洗工序的状态中,也能够防止粘接剂残留,从而能够防止半导体器件的不合格。
实施例
下面,说明涉及本发明的实施例和比较例。
在各个实施例、比较例中,调制粘接剂并制作粘接片,对获得的粘接剂层和粘接片进行评价。还有,下述表1、2中混合比是重量比。
实施例1
用表1所示的组成和配合比,制造出在四氢呋喃中混合的粘接剂溶液。然后,采用聚酰亚胺树脂膜(东レ·デユポン公司制造,商品名称:カプトン100EN,厚25μm,玻璃化转变温度300℃或300℃以上,热膨胀系数16ppm/℃)作为耐热性基层材料,并在其上涂覆上述粘接剂溶液之后,在120℃进行5分钟干燥使其干燥之后的厚度为6μm,得到具有粘接剂层的本发明的粘接片。
再有,热固性树脂成分(a)和热塑性树脂成分(b)的重量比为1.5,以及(热固性树脂成分(a)+热塑性树脂成分(b))/(给予再剥离性成分(c))的重量比为28.57。
实施例2
除了将粘接剂溶液改变为表1中所示的组成和配合比以外,与实施例1相同,获得本发明的粘接片。
再有,热固性树脂成分(a)和热塑性树脂成分(b)的重量比为1.5,并且(热固性树脂成分(a)+热塑性树脂成分(b))/(给予再剥离性成分(c))的重量比为33.33。
实施例3
利用表1中所示的组成和配合比将热固性树脂成分(a)、热塑性树脂成分(b)和固化促进剂混合在四氢呋喃中,制作粘接剂溶液。然后,采用聚酰亚胺树脂膜(东レ·デユポン公司制造,商品名称:ヵプトン100EN,厚25μm,玻璃化转变温度300℃或300℃以上,热膨胀系数16ppm/℃)作为耐热性基层材料,在其上涂覆上述粘接剂溶液之后,在100℃下进行3分钟干燥使干燥之后厚度成为6μm,获得粘接剂之后,按照表1中所示的配合比,在粘接剂之上涂覆将1重量份的给予再剥离性成分(c)用50重量份的四氢呋喃进行稀释的溶液,然后,在120℃下进行5分钟干燥,得到具有粘接剂层的本发明的粘接片。
再有,热固性树脂成分(a)/热塑性树脂成分(b)的重量比为1.5。
实施例4
除了将粘接剂溶液改变至表1中所示的组成和配合比之外,与实施例3同样,得到本发明的粘接片。
再有,热固性树脂成分(a)/热塑性树脂成分(b)的重量比为1.5。
实施例5
利用与实施例1相同的组成和配合比制作粘接剂溶液,然后使用铜箔(三井金属矿业公司制造,商品名称:3EC-VLP,厚25μm,热膨胀系数20ppm/℃)作为耐热性基层材料,在其粗化面上涂覆上述粘接剂溶液之后,在120℃下进行5分钟干燥使干燥之后的厚度为8μm,获得具有粘接剂层的本发明的粘接片。
实施例6
利用表1中所示的组成和配合比,制作混合在N-甲基吡咯烷酮中的粘接剂溶液。然后,使用铜箔(三井金属矿业公司制造,商品名称:3EC-VLP,厚25μm)作为耐热性基层材料,在其粗化面上涂覆上述粘接剂溶液之后,在180℃下进行10分钟干燥使干燥之后粘接剂厚度为6μm,获得具有粘接剂层的本发明的粘接片。
再有,热塑性树脂组分(b)/(给予再剥离性成分(c))的重量比为33.33。
表1
实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 | 实施例6 | ||||
第1层 | 第2层 | 第1层 | 第2层 | ||||||
热固性树脂成分(a) | 环氧树脂(大日本インキ化学工业公司制造“HP-7200”) | 40 | 40 | 40 | |||||
酚醛树脂(日本化药公司制造“TPM”) | 20 | 20 | 20 | ||||||
环氧树脂(ジヤパンエポキシレジン公司制造“エピコ-ト828”) | 30 | 30 | |||||||
酚醛树脂(昭和高分子公司制造“CKM2400”) | 30 | 30 | |||||||
热塑性树脂成分(b) | 丙烯腈-丁二烯共聚物树脂(日本ゼオン公司制造“Nipol 1001”重均分子量30000) | 40 | 40 | 40 | |||||
聚酰胺树脂(ヘンケルジヤパン公司制造“マクロメルト6238”重均分子量40000) | 40 | 40 | |||||||
聚酰亚胺树脂(巴川制纸所公司制造:含有硅氧烷的芳香族聚酰亚胺重均分子量50000) | 100 | ||||||||
给予再剥离性成分(c) | 改性硅油(东レ·ダウ·コ—ニング公司制造“SF8413”) | 3.5 | 0 3 | 3.5 | |||||
改性硅油(信越シリコ一ン公司制造“KF105”) | 3 | 0.2 | |||||||
改性硅油(信越シリコ一ン公司制造“KF861”) | 3 | ||||||||
其他 | 固化促进剂(四国化成公司制造2-乙基4-甲基咪唑) | 1 | 1 | 1 | 1 | 1 |
比较例1
除了将粘接剂溶液改变至利用表2中所示的组成和配合比混合的粘接剂溶液之外,与实施例1相同,得到比较用的粘接片。
再有,热固性树脂成分(a)/热塑性树脂成分(b)的重量比为1.5。
比较例2
除了将粘接剂溶液改变至利用表2中所示的组成和混合比配合的粘接剂溶液之外,与实施例1相同,得到比较用的粘接片。
再有,热固性树脂成分(a)/热塑性树脂成分(b)的重量比为1.5。
表2
比较例1 | 比较例 2 | ||
热固性树脂成分(a) | 环氧树脂(大日本インキ化学工业公司制造“HP-7200”) | 40 | |
酚醛树脂(日本化药公司制造“TPM”) | 20 | ||
环氧树脂(ジヤパンエポキシレジン公司制造“エピコ-ト828”) | 30 | ||
酚醛树脂(昭和高分子公司制造“CKM2400”) | 30 | ||
热塑性树脂成分(b) | 丙烯腈-丁二烯共聚物树脂(日本ゼオン公司制造“Nipol1001”重均分子量30000) | 40 | |
聚酰胺树脂(ヘンケルジヤパン公司制造“マクロメルト6238”重均分子量40000) | 40 | ||
聚酰亚胺树脂(巴川制纸所公司制造:含有硅氧烷的芳香族聚酰亚胺重均分子量50000) | |||
给予再剥离性成分(c) | 改性硅油(东レ·ダウ·コ—ニング公司制造「SF8413」) | ||
改性硅油(信越シリコ一ン公司制造“KF105”) | |||
改性硅油(信越シリコ一ン公司制造“KF861”) | |||
其他 | 固化促进剂(四国话成公司制造2-乙基4-甲基咪唑 | 1 | 1 |
(储藏弹性模量的测定)
在可分离膜上涂覆在实施例和比较例中获得的粘接剂溶液之后,以与制作粘接片时相同的干燥条件进行干燥,并利用压模贴装工序的热处理条件(175℃、2小时)进行热处理,制造出附带粘接剂层附着的可分离性膜。再有,进行粘接剂的涂覆、干燥,使其干燥后的厚度为0.1mm。
按照5mm×30mm切断获得的样品,采用弹性模量检测装置(オリエンテツク公司制造的レオバイブロンDDV-II),在11Hz频率、升温速度3℃/min,在检测温度范围150℃-250℃下进行检测。其结果如表3中所示。再有,表3的数值表示在温度范围150℃-250℃下储藏弹性模量的最小值。
(粘接片的评价)
1.导线焊接的不合格
通过层压方法,在外部尺寸200mm×60mm的QFN使用引线框架(镀Au-Pd-Ni的Cu引线框架、4×16个(共64个)的矩阵排列、封装尺寸10mm×10mm、84插脚)上粘附由各个实施例和比较例中获得的粘接片。
对其中的一半实施等离子体清洗处理。
然后,使用环氧类压模贴装剂在引线框架的半导体元件上承载部承载蒸镀了铝的伪芯片(ダミ一チツプ)(6mm×6mm,厚0.4mm)之后,使用导线焊接剂(新川公司制造,UTC-470BI),以加热温度为210℃、电源功率(USPOWER)为30、负荷为0.59N、处理时间为10毫秒/引脚,通过金导线电连接伪芯片和引线。
检测获得的64个封装块,以检测出的发生引线一侧连接不合格的封装块数量,作为发生导线焊接不合格的个数,此结果由表3显示。
2.模压毛边
使用导线焊接不合格评估之后的引线框架进行模压毛边的评估。首先,分为实施等离子体清洗的框架和不实施等离子体清洗的框架,分别使用环氧类浇铸剂(联苯环氧类,填料量85重量%),按加热温度为180℃、压力为10MPa、处理时间为3分钟,通过压铸(模具成型)、利用封装树脂密封伪芯片。
检测64个树脂封装之后的封装块,以检测出在引线外部连接用部分(引线的粘接片一侧的面)上粘附封装树脂的封装块数量,作为发生模压毛边的个数,此结果由表3显示。
3.粘接剂残留
使用包含有无等离子体清洗的模压毛边评估之后的导线框架,进行粘接剂残留的评估。首先,按剥离速度500毫米/分(mm/min)的条件,从导线框架剥离粘接片。
检测64个粘接片剥离之后的封装块,以在引线外部连接用部分,含有浇铸树脂面的粘接片剥离表面之上粘附粘接剂的封装块数量作为发生粘接剂残留的数量,由表3显示。
4.粘接强度
以1cm的宽度切割从各实施例和比较例中获得的粘接片,在50mm×100mm×0.25mmt的铜板(三菱メテツクス公司制造,商品名称:MF-202)和在铜板上镀金的板上,通过辊层压进行压制。然后,在经过压模贴装固化(175℃、1小时)、浇铸树脂固化(180℃、4小时)一定的热处理过程后返回到常温下。在150℃下加热这些板,相检测对于板按90°的方向剥离获得的层压体的粘接剂层时的剥离强度。
而且,将板的加热温度按每次5℃从150℃上升到200℃,进行此剥离强度的检测。并且,将在150-200℃各个检测温度下的剥离强度中的最小值作为粘接片的粘接强度,其结果由表3显示。此时不用问有无镀金层,实际上使用所必须的铜板粘接力均为0.098N/cm或0.098N/cm以上。
表3
储藏弹性模量(MPa) | 导线焊接不合格(个) | 模压毛边(个) | 发生粘接剂残留(个) | 粘接强度(N/cm) | |||||
无等离子体 | 有等离子体 | 无等离子体 | 有等离子体 | 无等离子体 | 有等离子体 | 无镀金 | 有镀金 | ||
实施例1 | 30 | 0 | 0 | 0 | 0 | 0 | 0 | 0.78 | 0.29 |
实施例2 | 40 | 0 | 0 | 0 | 0 | 0 | 0 | 0.59 | 0.39 |
实施例3 | 30 | 0 | 0 | 0 | 0 | 0 | 0 | 0.59 | 0.39 |
实施例4 | 45 | 0 | 0 | 0 | 0 | 0 | 0 | 0.34 | 0.25 |
实施例5 | 30 | 0 | 0 | 0 | 0 | 0 | 0 | 0.49 | 0.39 |
实施例6 | 50 | 0 | 0 | 0 | 0 | 0 | 0 | 0.29 | 0.29 |
比较例1 | 30 | 0 | 0 | 0 | 0 | 0 | 25 | 2.9 | 0.49 |
比较例2 | 40 | 0 | 0 | 0 | 0 | 0 | 39 | 0.59 | 0.49 |
如表3中所示,本发明的粘接片即使在实施等离子体清洗的导线框架中,也完全不会发生导线焊接不合格、模压毛边和粘接剂残留。相反,在不含有给予再剥离性成分(c)的比较例中,多处发生了粘接剂残留。
产业上的可利用性
正如以上的详细描述,在本发明的半导体制造用粘接片中,即使在等离子体清洗中暴露粘接剂层,也可保持合适的剥离性,不发生粘接剂残留。因此,通过使用本发明的粘接片制造QFN等半导体器件,不仅能防止导线焊接的不合格、模压毛边特性,而且能防止粘接剂残留,从而能防止半导体器件的不合格化。
Claims (17)
1.一种半导体器件制造用粘接片,该粘接片是在引线框架或布线基板上可剥离粘贴的半导体器件制造用粘接片,其特征在于,
具有含耐热性基层材料和粘接剂层的层压体,该粘接剂层含有热塑性树脂成分(b)和给予再剥离性成分(c)。
2.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,上述粘接剂层含有热固性树脂成分(a)。
3.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,上述给予再剥离性成分(c)是硅油。
4.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,上述给予再剥离性成分(c)具有反应性,处于与热塑性树脂成分(b)化学结合的状态。
5.根据权利要求2中所述的半导体器件制造用粘接片,其特征在于,上述给予再剥离性成分(c)具有反应性,处于与热固性树脂成分(a)和热塑性树脂成分(b)的混合物化学结合的状态。
6.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,粘贴在铜或镀金的铜上,固化后在150-200℃下的剥离力为0.03-5N/cm。
7.根据权利要求2中所述的半导体器件制造用粘接片,其特征在于,上述粘接剂层是使上述给予再剥离性成分(c)与热固性树脂成分(a)和热塑性树脂成分(b)的混合物成膜形成的。
8.根据权利要求2中所述的半导体器件制造用粘接片,其特征在于,上述粘接剂层的热固性树脂成分(a)和热塑性树脂成分(b)的重量比(a)/(b)为3.5或3.5以下,((a)+(b))/(c)为6-2000。
9.根据权利要求2中所述的半导体器件制造用粘接片,其特征在于,给予再剥离性成分(c)是在含有热固性树脂成分(a)和热塑性树脂成分(b)构成的粘接剂层的表面上成膜的成分。
10.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,热塑性树脂成分(b)的重均分子量为2000-1,000,000。
11.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,上述粘接剂层固化之后的储藏弹性模量在150-200℃下为1MPa或1MPa以上。
12.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,上述耐热性基层材料是玻璃化转变温度为150℃或150℃以上并且热膨胀系数为5-50ppm/℃的耐热性树脂膜。
13.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,上述耐热性基层材料是热膨胀系数为5-50ppm/℃的金属箔。
14.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,在上述粘接剂层的单面上设置有保护膜。
15.根据权利要求1中所述的半导体器件制造用粘接片,其特征在于,在与铜或镀金铜粘接时的粘接强度为0.098N/cm或0.098N/cm以上。
16.一种半导体器件,其特征在于,该半导体器件是利用权利要求1-15中任何一项所述的半导体器件制造用粘接片制造的。
17.一种半导体器件的制造方法,其特征在于,利用权利要求1-15中任何一项所述的半导体器件制造用粘接片进行制造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP083795/03 | 2003-03-25 | ||
JP083795/2003 | 2003-03-25 | ||
JP2003083795A JP4421204B2 (ja) | 2003-03-25 | 2003-03-25 | 半導体装置製造用接着シート及びそれを用いた半導体装置並びに製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1622279A true CN1622279A (zh) | 2005-06-01 |
CN100492586C CN100492586C (zh) | 2009-05-27 |
Family
ID=33399169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100387951A Expired - Lifetime CN100492586C (zh) | 2003-03-25 | 2004-03-23 | 半导体器件制造用粘接片及用此粘接片的半导体器件和制法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP4421204B2 (zh) |
KR (1) | KR100596186B1 (zh) |
CN (1) | CN100492586C (zh) |
HK (1) | HK1073178A1 (zh) |
MY (1) | MY140439A (zh) |
TW (1) | TWI313481B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102136432A (zh) * | 2010-01-26 | 2011-07-27 | 东丽世韩株式会社 | 利用耐热胶粘片制造半导体器件的方法 |
CN108922854A (zh) * | 2018-06-14 | 2018-11-30 | 中国电子科技集团公司第二十四研究所 | 一种用于封装硅基芯片的瞬态电路封装结构实现方法 |
CN110734736A (zh) * | 2014-08-08 | 2020-01-31 | 东丽株式会社 | 临时粘接用粘合剂、粘合剂层、晶片加工体及使用其的半导体器件的制造方法 |
TWI732764B (zh) * | 2015-06-01 | 2021-07-11 | 日商富士軟片股份有限公司 | 暫時接著劑、接著膜、接著性支持體、積層體及接著劑套組 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4863690B2 (ja) * | 2005-10-31 | 2012-01-25 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及び半導体装置並びにその製造方法 |
JP4654062B2 (ja) * | 2005-03-30 | 2011-03-16 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP4538398B2 (ja) * | 2005-10-31 | 2010-09-08 | 株式会社巴川製紙所 | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP4505649B2 (ja) * | 2006-03-23 | 2010-07-21 | フジコピアン株式会社 | 固定シート |
JP2009158817A (ja) * | 2007-12-27 | 2009-07-16 | Tomoegawa Paper Co Ltd | Qfn用熱硬化型樹脂組成物及びそれを用いたqfn用接着シート |
JP5714349B2 (ja) * | 2011-01-31 | 2015-05-07 | ニッタ株式会社 | 易剥離性粘着シートおよび易剥離性粘着テープ |
JP7187906B2 (ja) * | 2018-09-10 | 2022-12-13 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法 |
WO2021131925A1 (ja) * | 2019-12-23 | 2021-07-01 | 日産化学株式会社 | 接着剤組成物、積層体及びその製造方法並びに積層体の剥離方法及び半導体形成基板を加工する方法 |
-
2003
- 2003-03-25 JP JP2003083795A patent/JP4421204B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-22 KR KR1020040019211A patent/KR100596186B1/ko active IP Right Grant
- 2004-03-23 CN CNB2004100387951A patent/CN100492586C/zh not_active Expired - Lifetime
- 2004-03-24 TW TW093107894A patent/TWI313481B/zh not_active IP Right Cessation
- 2004-03-25 MY MYPI20041058A patent/MY140439A/en unknown
-
2005
- 2005-07-07 HK HK05105728.3A patent/HK1073178A1/xx not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102136432A (zh) * | 2010-01-26 | 2011-07-27 | 东丽世韩株式会社 | 利用耐热胶粘片制造半导体器件的方法 |
CN110734736A (zh) * | 2014-08-08 | 2020-01-31 | 东丽株式会社 | 临时粘接用粘合剂、粘合剂层、晶片加工体及使用其的半导体器件的制造方法 |
CN110734736B (zh) * | 2014-08-08 | 2022-04-19 | 东丽株式会社 | 临时粘接用粘合剂、粘合剂层、晶片加工体及使用其的半导体器件的制造方法 |
TWI732764B (zh) * | 2015-06-01 | 2021-07-11 | 日商富士軟片股份有限公司 | 暫時接著劑、接著膜、接著性支持體、積層體及接著劑套組 |
CN108922854A (zh) * | 2018-06-14 | 2018-11-30 | 中国电子科技集团公司第二十四研究所 | 一种用于封装硅基芯片的瞬态电路封装结构实现方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2004296549A (ja) | 2004-10-21 |
JP4421204B2 (ja) | 2010-02-24 |
KR100596186B1 (ko) | 2006-07-03 |
TW200501208A (en) | 2005-01-01 |
MY140439A (en) | 2009-12-31 |
KR20040084680A (ko) | 2004-10-06 |
TWI313481B (en) | 2009-08-11 |
HK1073178A1 (en) | 2005-09-23 |
CN100492586C (zh) | 2009-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1300845C (zh) | 半导体装置制造用粘合薄片、以及应用该薄片的半导体装置的制造方法 | |
CN1280883C (zh) | 半导体装置制造用的粘接片 | |
CN1150614C (zh) | 半导体封装及其制造方法 | |
CN1261990C (zh) | 带导电体的粘接板、半导体装置的制造方法及半导体装置 | |
KR20190062377A (ko) | 필름상 접착제, 필름상 접착제를 사용한 반도체 패키지의 제조 방법 | |
JP4537555B2 (ja) | 半導体パッケージの製造方法及び半導体パッケージ | |
JP4654062B2 (ja) | 半導体装置製造用接着シート及び半導体装置の製造方法 | |
CN1622279A (zh) | 半导体器件制造用粘接片及用此粘接片的半导体器件和制法 | |
JP4538398B2 (ja) | 半導体装置製造用接着シート及び半導体装置の製造方法 | |
CN1630070A (zh) | 半导体装置制造用粘结膜 | |
WO2001093328A2 (en) | Lead frame laminate and method for manufacturing semiconductor parts | |
CN1608399A (zh) | 连接基片及用该连接基片的多层布线板和半导体插件用基片和半导体插件以及它们的制造方法 | |
CN1348976A (zh) | 粘接剂和粘接膜 | |
CN1838860A (zh) | 柔性印刷线路板及其制造方法、和半导体装置 | |
JP2006318999A (ja) | 半導体装置製造用接着フィルム | |
JP2024010048A (ja) | 半導体装置 | |
CN100350597C (zh) | 用于形成树脂拉杆的带和树脂拉杆 | |
CN1280899C (zh) | 半导体装置组装用屏蔽片及半导体装置组装方法 | |
JP3779601B2 (ja) | 半導体装置組立用マスクシート | |
CN1858109A (zh) | 半导体封装用环氧树脂组合物、半导体器件及其制造方法 | |
JP7255146B2 (ja) | フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法 | |
JP3857953B2 (ja) | 半導体装置製造用接着シート | |
CN113474433A (zh) | 膜状黏合剂、黏合片及半导体装置 | |
CN101063026A (zh) | 电子部件用胶布带 | |
JP2022033064A (ja) | フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1073178 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1073178 Country of ref document: HK |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20090527 |