CN1630070A - 半导体装置制造用粘结膜 - Google Patents

半导体装置制造用粘结膜 Download PDF

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CN1630070A
CN1630070A CNA2004101019389A CN200410101938A CN1630070A CN 1630070 A CN1630070 A CN 1630070A CN A2004101019389 A CNA2004101019389 A CN A2004101019389A CN 200410101938 A CN200410101938 A CN 200410101938A CN 1630070 A CN1630070 A CN 1630070A
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adhesive film
conductor
semiconductor device
semiconductor chip
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CN100452366C (zh
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细川和人
桶结卓司
池村和弘
吉川桂介
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Nitto Denko Corp
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Abstract

本发明提供半导体装置制造用粘结膜，该粘结膜是在半导体装置的制造方法中最终除去的粘结膜，适合在导体的一部分由密封树脂突出的具有所谓基准距的半导体装置的制造中使用。该半导体装置制造用粘结膜用于具有下述工序的半导体装置的制造方法，即：(a)将导体的至少一部分埋设在粘结膜中，形成导体的工序；(b)在导体上搭载半导体芯片的工序；(c)将半导体芯片与导体连接的工序；(d)用密封树脂将半导体芯片密封的工序；以及(e)除去粘结膜的工序；其中，该粘结膜具有热固性粘结剂层和耐热性基材层。

Description

半导体装置制造用粘结膜
技术领域
本发明涉及半导体装置制造用粘结膜。
背景技术
近年来，在LSI(Large Scale IC：大规模集成电路)的安装技术中，CSP(Chip Size/Scale Package)技术受到人们的瞩目。该技术中，QFN(Quad Flat Non-leaded package)所代表的引线端子在封装内部形态的封装在小型化和高集成方面是特别引人注目的封装形态之一。近年来，在这种QFN制造方法中，将多个QFN用芯片整齐地排列于引线框架封装图案区的冲模垫(ダイパツド)上，在模具的型腔内用密封树脂进行整体密封后，通过切断分切成各个QFN结构体，从而使引线框架单位面积的生产性飞跃性提高的制造方法特别引人注目。
在这样的将多个半导体芯片整体密封的QFN制造方法中，树脂密封时被模塑模具夹持的区域只在比封装图案区域更向外侧扩展的树脂密封区域的外侧。因此，在封装图案区域，特别是在其中央部分，不能以足够的压力将外部引线面压向模塑模具，难以防止密封树脂向外部引线侧漏出，容易产生QFN端子等被树脂覆盖这样的问题。
因此，提出在QFN的制造方法中，将粘结带粘贴于引线框架的外垫面上，通过该粘结带的遮蔽起到的密封效果，防止密封树脂向外部侧漏出的方法(参照专利文献1)。所述方法中，粘结带在最初阶段贴合于引线框架的外垫面上，之后经过半导体芯片的搭载工序和引线接合工序，一直贴合到用密封树脂进行的密封工序。
另外，近年来，也提出所谓的无引线的半导体装置的制造方法，即为了更薄型化的目的，在基材上贴附铜箔，通过蚀刻形成导体(参照专利文献2)。所述方法中，由于在基材上形成导体，因此可实现导体的薄型化，并且，将用密封树脂成型的半导体装置个片化时，无需切断引线框架，因此切块时刀片的磨损等也少。
对上述方法中使用的粘结带或基材不仅只单单要求防止密封树脂的漏出，而且要求具有可耐受半导体芯片搭载工序的高耐热性；不会对引线接合工序中精密的操作性带来阻碍；密封工序结束后不留残糊，可良好地剥离等这些满足全部工序的特性。
因此，在半导体装置的制造过程中，通常在最终剥离的粘结膜的粘结剂层使用具有优异的耐热性和适度的弹性模量以及粘合力的硅氧烷系粘合剂。
[专利文献1]特开2000-294580号公报(权利要求1)
[专利文献2]特开平9-252014号公报(权利要求1)
发明内容
但是，为了提高耐热性，耐热性粘结带使用的硅氧烷系粘合剂高度交联，弹性模量增大，流动性不足，因此在制造导体的一部分由密封树脂中突出的具有所谓基准距(スタンドオフ)的半导体装置时，在其制造过程中，存在难以将导体的一部分埋入粘合剂层中的缺点。
本发明的目的在于提供半导体装置制造用粘结膜，其在半导体装置的制造方法中是最终要被除去的粘结膜，适合用于导体的一部分由密封树脂中突出的具有所谓基准距的半导体装置的制造。
本发明涉及半导体装置制造用粘结膜，该半导体装置制造用粘结膜用于具有下述工序的半导体装置的制造方法，即：
(a)将导体的至少一部分埋设在粘结膜中，形成导体的工序；
(b)在导体上搭载半导体芯片的工序；
(c)将半导体芯片与导体连接的工序；
(d)用密封树脂将半导体芯片密封的工序；以及
(e)除去粘结膜的工序；
其中，该粘结膜具有热固性粘结剂层和耐热性基材层。
使用本发明的粘结膜，可以稳定地制造具有基准距的、安装可靠性高的半导体装置。
实施发明的最佳方式
本发明的粘结膜具有热固性粘结剂层和耐热性基材层。
作为热固性粘结剂层中含有的粘结剂，例如硅氧烷系、丙烯酸系等各种感压性粘结剂，环氧/橡胶系，聚酰亚胺系等各种粘结剂，其中从耐热性和粘结性的角度考虑，优选含有环氧树脂和橡胶成分的环氧/橡胶系热固性粘结剂。
作为环氧树脂，优选分子内含有2个以上的环氧基的化合物，例如缩水甘油胺型环氧树脂、双酚F型环氧树脂、双酚A型环氧树脂、苯酚线型酚醛清漆型环氧树脂、甲酚线型酚醛清漆型环氧树脂、联苯型环氧树脂、萘型环氧树脂、脂族环氧树脂、脂环族环氧树脂、杂环式环氧树脂、含螺环环氧树脂、卤化环氧树脂等，它们可以单独使用或者将2种以上混合使用。
从耐热性和柔软性的角度考虑，优选粘结剂中环氧树脂的含量为40-95重量％，更优选60-80重量％。
从防止剥离后残留糊的观点考虑，优选环氧树脂的环氧当量为1000g/eq以下，更优选为650g/eq以下。
作为橡胶成分，例如NBR(丙烯腈丁二烯橡胶)、丙烯酸橡胶等环氧系粘结剂中一直使用的成分，但其中从密封树脂成型后的粘结膜剥离的容易度的角度考虑，优选共聚5重量％以上丙烯腈的橡胶，更优选用羧基改性的橡胶。作为这样的橡胶，例如“Nipol 1072J”(日本ゼオン(株)制)等丙烯腈丁二烯橡胶、“パラクロンME2000”(根上工业(株)制)等丙烯酸橡胶等。另外，丙烯腈共聚比例优选5-30重量％，更优选5-20重量％。
从柔软性和耐热性的角度考虑，优选粘结剂中橡胶成分的含量为5-40重量％，更优选5-30重量％。
而且，优选在粘结剂中添加用于使固化成分环氧树脂固化的固化剂。所述固化剂有酚树脂、各种咪唑系化合物及其衍生物、酰肼化合物、双氰胺、以及将它们微胶囊化得到的固化剂等，例如，含有酚树脂作为固化剂时，还可以同时使用三苯膦等磷系化合物等作为固化促进剂。
固化剂的含量因其种类而不同，不能一概而论，例如使用酚树脂时，优选与环氧树脂当量含有。其它固化剂和固化促进剂的含量优选相对于100重量份环氧树脂分别为0.05-5重量份，更优选为0.1-3重量份。
而且，在不使粘结膜的各特性变差的范围内，热固性粘结剂层还可以适当含有无机填充剂、有机填充剂、颜料、抗老化剂、硅烷偶联剂、增粘剂等公知的各种添加剂。这些添加剂中，抗老化剂是在防止高温下劣化方面有效的添加剂。
从成膜性的角度考虑，热固性粘结剂层的厚度优选为1-50μm左右，更优选5-30μm左右。
本发明中，优选热固性粘结剂层具有特定的弹性。即，用于半导体装置的制造时，在后述工序(a)中，为了使导体的一部分埋设在粘结剂层中，优选在将粘结膜与导体贴合的温度下为低粘度，另外，为稳定地固定导体，优选加热固化后为高粘度。而且，在制造半导体装置时，在连接工序和树脂密封工序中，由于也施加200℃附近的热履历，因此优选粘结膜具有在这样的环境下也可以稳定制造的优异的耐热性。由以上角度考虑，优选热固性粘结剂层在固化前120℃下的弹性模量为1×102-1×104Pa，更优选1×102-1×103Pa。另外，优选固化后200℃下的弹性模量为1MPa以上，更优选1.5-100MPa。
另外，优选本发明的粘结膜在后述工序(e)中，不会由密封树脂剥离导体，而可以只将粘结膜从半导体装置容易地剥离。由所述角度考虑，例如导体为铜箔时，优选热固性粘结剂层固化后在23℃下对铜箔的粘结力为1-20N/20mm，更优选3-10N/20mm。
作为耐热性基材，例如聚酯、聚酰胺、聚苯硫醚、聚醚酰亚胺、聚酰亚胺、聚萘二甲酸乙二酯等塑料基材及其多孔质基材；玻璃纸、上质纸、日本纸等纸基材；纤维素、聚酰胺、聚酯、芳族聚酰胺(aramid)等无纺布基材；铜箔、铝箔、SUS箔、镍箔等金属薄膜基材等。其中，从使用方便性的角度考虑，优选金属薄膜基材。
从操作性的角度考虑，耐热性基材层的厚度优选为10-200μm左右，更优选25-100μm。
本发明的粘结膜可通过如下方法制造：将粘结剂溶解于有机溶剂形成溶液，将该溶液涂布于耐热性基材上加热干燥的方法；将粘结剂分散于水系介质形成分散液，将该分散液涂布于耐热性基材上加热干燥的方法等。从溶解性的角度考虑，使粘结剂溶解的有机溶剂优选甲乙酮等酮类溶剂。
含有多层热固性粘结剂层的粘结膜可通过在耐热性基材上依次形成粘结剂层的方法、或使用剥离层压等将预先另外制作的粘结剂层贴附于其它粘结材料层或耐热性基材层上的方法、或将这些方法适当组合进行制造。
本发明的粘结膜的形状可以是片状、带状等，对此并没有特别限定。
本发明的粘结膜在具有下述工序的半导体装置的制造方法中使用：
(a)将导体的至少一部分埋设在粘结膜中，形成导体的工序；
(b)在导体上搭载半导体芯片的工序；
(c)将半导体芯片与导体连接的工序；
(d)用密封树脂将半导体芯片密封的工序；以及
(e)除去粘结膜的工序；
该制造方法只要是至少具有上述工序(a)-(e)的方法即可，没有特别限定，以下按照图1说明其中一个实施方式。
工序(a)是在热固性粘结剂层1和耐热性基材层2构成的本发明的粘结膜3上，使导体4的至少一部分埋设于粘结膜3的热固性粘结剂层1中，形成导体4的工序。
作为工序(a)中使用的导体，例如可以使用设有开口部、导电部呈纵横矩阵状配置的引线框架。引线框架是以铜、含铜的合金等金属为材料，刻有CSP端子图案，其电气接点部分有时被银、镍、钯、金等材料覆盖(镀层)。引线框架的厚度通常优选5-300μm左右。
为了使引线框架在之后的切断工序中容易切分，优选每个QFN配置图案整齐排列。例如，在引线框架上导电部分呈纵横矩阵状排列的形状等被称为矩阵QFN或MAP-QFN等的形状，是本发明中优选的引线框架的形状之一。
当为一般的QFN时，引线框架上的各个基板的设计例如可以由排列于开口部周围的端子部、配置于开口部中央的冲模垫、使冲模垫支撑开口部四个角的ダイバ-构成。
从提高具有基准距的半导体装置的安装可靠性的角度考虑，埋设于粘结膜的导体的厚度优选为导体总厚度的5-30％。
将其一部分埋设于粘结膜而形成的导体可通过将热固化粘结材料层加热固化进行固定。
工序(b)是在导体4上搭载半导体芯片5的工序。半导体芯片5的搭载例如可以使用粘结剂6等，将不形成半导体芯片5的电极的面牢固贴合在导体4的冲模垫面上来进行。
工序(c)是将半导体芯片5与导体4连接的工序。这是通过导线7等将导体4的导电部分与半导体芯片5的电极进行电连接的工序。
工序(d)是通过密封树脂8密封半导体芯片5的工序。通过密封树脂8密封半导体芯片5的方法并没有特别限定，例如可以使用模具通过通常的传递模塑法进行。另外，传递模塑后，可以根据需要进行模制树脂的后固化加热。后固化加热可以在下面的工序(e)之前，也可以在其之后。
工序(e)是除去粘结膜3的工序。除去粘结膜3的方法并没有特别限定，可以通过剥离等方法进行。
经过以上工序得到的半导体装置的一个例子如图2所示。所述半导体装置是导体4的一部分由密封树脂8突出的具有所谓基准距的半导体装置。
实施例
下面，通过实施例更具体地说明本发明，但本发明并不仅限于该
实施例。
实施例1
将30重量份丙烯腈丁二烯橡胶(日本ゼオン(株)制造、Nipol1072J、丙烯腈含量：18重量％)、65重量份双酚A型环氧树脂(ジヤパンエボキシレジン(株)制造、エピコ-ト828；环氧当量190g/eq)和5重量份咪唑(四国化成(株)制造、C11Z)混合，溶解于甲乙酮溶剂中，使固态部分浓度为35重量％，制备粘结剂溶液。
将所得粘合剂溶液涂布于作为耐热性基材的厚度100μm的铜箔上，然后在150℃干燥3分钟，在耐热性基材层上形成厚度20μm的热固性粘结剂层，得到粘结膜。
所得粘结膜的热固性粘结剂层在固化前120℃下的弹性模量为5×102Pa，固化后200℃下的弹性模量为1.5MPa。另外，上述热固性粘结剂层固化后在23℃下对铜箔的粘结力为8N/20mm。其中，弹性模量和粘结力是通过如下方法测定的值。
[弹性模量的测定方法]
评价仪器：レオメトリツクス公司制造的粘弹性分光计(ARES)
升温速度：5℃/分钟
频率：1Hz
测定模式：剪断模式
[粘结力的测定方法]
在宽度20mm、长度50mm的粘结膜的粘结剂层面上重叠厚度35μm的铜箔(BHY-138T、ジヤパンエナジ-公司制造)，在120℃×0.5MPa×0.5m/分钟的条件下进行层压，然后在150℃的热风炉中放置1小时。放置后，在温度23℃、湿度65％RH的环境条件下，将粘结膜以300mm/分钟的速度沿180°方向拉离，将其中心值作为粘结力。
接着，在所得粘结膜的热固化粘结剂层的面上重叠200μm铜制引线框架的外部侧，其中所述引线框架为端子部分镀银的一边为9针×2列排列形式的LLGA排列为3个×3个。加热至120℃进行层压，将引线框架的一部分埋设于粘结剂层。其中，埋设的引线框架的厚度约为8μm。接着，将热固性粘结剂层在150℃固化1小时，将引线框架固定在粘结膜上。
使用环氧苯酚系银涂浆作为粘结剂，将半导体芯片与引线框架的冲模垫部分粘结，将粘结剂在180℃固化1小时，将半导体芯片搭载于冲模垫上。
接着，以由粘结膜侧真空吸引的形式将粘结膜和导体的层压体固定在加热至200℃的热块上，再用风动夹紧装置压住层压体的周边部分进行固定。用新川(株)制造的115KHz导线粘合剂，通过25μm的金线(田中贵金属(株)制造，GLD-25)将半导体芯片的电极和引线框架的导电部分连接。
再使用模塑机(TOWA制、Model-Y-serise)，由环氧系模制树脂(日东电工制，HC-300)在175℃、预热40秒、注射时间11.5秒、固化时间120秒的条件下对它们进行模塑。
用环氧树脂密封半导体芯片后，剥离粘结膜，再在175℃进行后固化加热3小时，使树脂充分固化。之后，用切割机切断，得到各个LLGA型半导体装置。这样得到的LLGA无树脂溢出，另外各引线端子部分有大约8μm的基准距。
比较例1
在作为耐热性基材的厚度为100μm的铜箔上，使用硅氧烷系粘结材料(东レダウコ-ニング制SD-4587L)，形成厚度5μm的粘结层，得到粘结膜。
使用所得粘结膜，与实施例1同样地制造半导体装置，但不能充分抑制树脂流向端子部分，认为约60％以上的端子上有溢出毛边。另外，实质上几乎未见基准距。
本发明的粘结膜可以用于半导体装置的制造。
附图说明
图1是表示使用本发明粘结膜的半导体装置的制造方法的一个实施方式的概略工序图。
图2是使用本发明的粘结膜得到的半导体装置的一个实施方式的截面图。
符号说明
1热固性粘结剂层
2耐热性基材层
3粘结膜
4导体
5半导体芯片
6粘结剂
7导线
8密封树脂

Claims (6)

1、半导体装置制造用粘结膜，该半导体装置制造用粘结膜用于具有下述工序的半导体装置的制造方法，即：
(a)将导体的至少一部分埋设在粘结膜中，形成导体的工序；
(b)在导体上搭载半导体芯片的工序；
(c)将半导体芯片与导体连接的工序；
(d)用密封树脂将半导体芯片密封的工序；以及
(e)除去粘结膜的工序；
其中，该粘结膜具有热固性粘结剂层和耐热性基材层。
2、如权利要求1所述的半导体装置制造用粘结膜，其中，热固性粘结剂层固化前在120℃的弹性率是1×102～1×104Pa，固化后在200℃的弹性率为1MPa以上。
3、如权利要求1或2所述的半导体装置制造用粘结膜，其中，热固性粘结剂层固化后在23℃对铜箔的粘结力为1～20N/20mm。
4、如权利要求1～3中任意一项所述的半导体装置制造用粘结膜，其中，热固性粘结剂层含有含橡胶成分和环氧树脂成分的粘结剂，上述橡胶成分包括丙烯腈丁二烯橡胶和丙烯酸橡胶。
5、如权利要求4所述的半导体装置制造用粘结膜，其中，热固性粘结剂层含有含橡胶成分和环氧树脂成分的粘结剂，在粘结剂中上述橡胶成分的含量为5～40重量％。
6、半导体装置的制造方法，该半导体装置的制造方法具有以下工序，即：
(a)将导体的至少一部分埋设在粘结膜中，形成与粘结膜粘结的导体的工序；
(b)在导体上搭载半导体芯片的工序；
(c)将半导体芯片与导体连接的工序；
(d)用密封树脂将半导体芯片密封的工序；以及
(e)除去粘结膜的工序；
其中，该粘结膜具有热固性粘结剂层和耐热性基材层。
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