CN102391809A - 热固化型模片键合膜 - Google Patents

热固化型模片键合膜 Download PDF

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Publication number
CN102391809A
CN102391809A CN2011102614803A CN201110261480A CN102391809A CN 102391809 A CN102391809 A CN 102391809A CN 2011102614803 A CN2011102614803 A CN 2011102614803A CN 201110261480 A CN201110261480 A CN 201110261480A CN 102391809 A CN102391809 A CN 102391809A
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Prior art keywords
film
weight
die molding
molding film
resin composition
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CN2011102614803A
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Inventor
高木尚英
三隅贞仁
松村健
天野康弘
荒井麻美
三木翼
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Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN102391809A publication Critical patent/CN102391809A/zh
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Abstract

本发明的热固化型模片键合膜，其在制造半导体装置时使用，其特征在于，含有5～15重量％热塑性树脂成分及45～55重量％热固性树脂成分为主成分，并且热固化前的100℃下的熔融粘度为400Pa·s以上、2500Pa·s以下。

Description

热固化型模片键合膜
本申请是申请日为2008年3月3日的中国专利申请第200810080687.9号的分案申请。
技术领域
本发明涉及热固化型模片键合膜以及具有该膜的切割和模片键合膜，更详细地，本发明涉及在将半导体芯片等模片键合到衬底或引线框等被粘物上时使用的热固化型模片键合膜及具有该膜的切割和模片键合膜。
背景技术
以往，在半导体装置的制造过程中，半导体芯片向引线框和电极构件的粘着使用银浆。所述的粘着处理，通过将浆状胶粘剂涂布于引线框的冲模垫等的上面，并在其上安装半导体芯片，然后使浆状胶粘剂层固化来进行。
但是，浆状胶粘剂由于其粘度行为及变差等会在涂布量和涂布形状等方面产生大量的偏差。结果，形成的浆状胶粘剂层厚度不均匀，因此，半导体芯片相关的粘着强度的可靠性缺乏。即，如果浆状胶粘剂的涂布量不足，则半导体芯片与电极构件之间的粘着强度降低，在后续的丝焊工序中半导体芯片剥离。另一方面，如果浆状胶粘剂的涂布量过多，则浆状胶粘剂一直流延到半导体芯片上，产生特性不良，成品率、可靠性下降。这样的粘着处理中的问题，随着半导体芯片的大型化变得特别显著。因此，需要频繁地进行浆状胶粘剂涂布量的控制，引起操作性和生产率的问题。
在该浆状胶粘剂的涂布工序中，有在引线框或形成芯片上另外涂布浆状胶粘剂的方法。但是，在该方法中，浆状胶粘剂层难以均匀化，另外，浆状胶粘剂的涂布需要特殊装置和长时间。因此，公开了在切割工序中粘着保持半导体晶片的同时、也提供安装工序中需要的芯片粘着用的胶粘剂层的切割和模片键合膜(例如，参见日本特开昭60-57342号公报)。
该切割和模片键合膜是在支撑基材上依次层压粘合剂层和胶粘剂层而构成的。即，在通过胶粘剂层保持下将半导体晶片切割后，拉伸支撑基材而将芯片状工件与胶粘剂层一起剥离，并将其分别回收。另外，芯片状工件通过胶粘剂层粘着到引线框等被粘物上。
另一方面，作为半导体芯片的粘着中使用的模片键合用胶粘膜，可以列举例如热固化型的模片键合用胶粘膜。作为该热固化型模片键合膜，从提高对于以衬底的布线或半导体芯片上的导线等为代表的、由于表面凹凸而高低差大的被粘物的密合性的观点考虑，使用熔融粘度小的胶粘膜。
但是，如果熔融粘度过小，则胶粘剂从胶粘膜中渗出，存在污染衬底、半导体芯片等的问题。另一方面，如果熔融粘度过大，则对于被粘物的密合性变差，存在产生空隙的问题。
发明内容
本发明是鉴于上述问题而进行的，其目的在于提供与被粘物的密合性优良、并且不产生由于胶粘剂的渗出导致的衬底或半导体芯片污染的热固化型模片键合膜及具有该模片键合膜的切割和模片键合膜。
本发明人为了解决上述现有技术的问题，对于热固化型模片键合膜及具有该模片键合膜的切割和模片键合膜进行了研究。结果发现，通过采用下述构成可以实现上述目的，并且完成了本发明。
即，本发明的热固化型模片键合膜，是在制造半导体装置时使用的热固化型模片键合膜，其特征在于，含有5～15重量％热塑性树脂成分及45～55重量％热固性树脂成分为主成分，并且热固化前在100℃下的熔融粘度为400Pa·s以上、2500Pa·s以下。
根据前述构成，由于将热塑性树脂成分的下限设定为5重量％、将热固性树脂成分的上限设定为55重量％、并且将所述模片键合膜热固化前在100℃下的熔融粘度设定为400Pa·s以上，因此对于衬底等被粘物具有良好的密合性。结果，在与衬底或引线框等被粘物的胶粘面上，可以减少空隙的产生。另一方面，由于将热塑性树脂成分的上限设定为15重量％、将热固性树脂成分的下限设定为45重量％、并且将所述熔融粘度设定为2500Pa·s以下，因此可以抑制胶粘剂成分等从模片键合膜渗出。结果，可以防止衬底或在其上粘着的半导体芯片的污染。
前述模片键合膜热固化后在250℃下的拉伸储能弹性模量优选为10MPa以上。由此，例如即使是对在热固化型模片键合膜上粘着的半导体芯片进行丝焊时，也可以防止由于超声波振动或加热导致在模片键合膜与被粘物的胶粘面上产生剪切变形。结果，可以提高丝焊的成功率，并且进一步提高成品率，制造半导体装置。
通过加热热固化后在85℃、85％RH的环境下放置168小时时的吸湿率优选为1重量％以下。通过使吸湿率为1重量％以下，例如可以防止回流工序中在封装中产生裂纹。
通过加热热固化后在250℃加热1小时后的重量减少量优选为1重量％以下。通过使重量减少量为1重量％以下，例如可以防止回流工序在封装时产生裂纹。
另外，为了解决前述课题，本发明的切割和模片键合膜的特征在于，前述的热固化型模片键合膜层压在粘合膜上。
本发明通过前面说明的方法，取得下述效果。
即，根据本发明的热固化型模片键合膜，含有5～15重量％热塑性树脂成分及45～55重量％热固性树脂成分为主成分，并且热固化前在100℃下的熔融粘度为400Pa·s以上、2500Pa·s以下，由此可以提高对被粘物的密合性而防止空隙的产生，同时，可以抑制胶粘剂成分渗出，从而防止半导体芯片等的污染。结果，可以以良好的成品率制造可靠性高的半导体装置。
附图说明
图1是表示通过本发明的实施方式之一的模片键合膜安装半导体芯片的例子的示意剖视图。
图2是表示通过前述模片键合膜三维安装半导体芯片的例子的示意剖视图。
图3是表示使用前述模片键合膜通过衬垫(spacer)三维安装两个半导体芯片的例子的示意剖视图。
图4是表示不使用所述衬垫，通过模片键合膜三维安装两个半导体芯片的例子的示意剖视图。
具体实施方式
(热固化型模片键合膜)
以下对本发明的热固化型模片键合膜(以下，称为“模片键合膜”)进行说明。
所述模片键合膜含有5～15重量％热塑性树脂成分和45～55重量％热固性树脂成分作为主成分。另外，其熔融粘度在热固化前的100℃下为400～2500Pa·s，更优选500～2000Pa·s。
将热塑性树脂成分的下限设定为5重量％、将热固性树脂成分的上限设定为55重量％、并且将所述胶粘膜热固化前在100℃下的熔融粘度设定为500Pa·s以上。结果，对于模片键合膜的被粘物具有良好的密合性。另一方面，将热塑性树脂成分的上限设定为15重量％、将热固性树脂成分的下限设定为45重量％、并且将所述的熔融粘度限定为2000Pa·s以下。结果，可以抑制胶粘剂成分等从模片键合膜渗出，其结果是可以防止衬底、半导体芯片等的污染。
另外，前述模片键合膜热固化后在250℃下的拉伸储能弹性模量优选为10MPa以上，更优选15～100MPa。拉伸储能弹性模量的调节，例如可以通过调节无机填料的添加量实现。
前述模片键合膜加热热固化后在85℃、85％RH的环境下放置168小时时的吸湿率优选为1重量％以下。通过使吸湿率为1重量％以下，例如可以防止回流焊接工序中在封装中产生裂纹。吸湿率的调节，例如可以通过调节无机填料的添加量实现。
通过加热热固化后在250℃加热1小时后的重量减少量优选为1重量％以下。通过使重量减少量为1重量％以下，例如可以防止回流工序中在封装时产生裂纹。重量减少量的调节，例如，可以通过调节无机填料的添加量实现。
本实施方式的模片键合膜，可以列举例如：仅由单层的胶粘剂层构成的胶粘片、在芯材的单面或两面上形成胶粘剂层的多层结构的胶粘片等。在此，作为所述芯材，可以列举膜(例如，聚酰亚胺膜、聚酯膜、聚对苯二甲酸乙二醇酯膜、聚萘二甲酸乙二醇酯膜、聚碳酸酯膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。另外，也可以使用模片键合膜与切割膜一体型的材料。
作为所述热塑性树脂，可以列举天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁二烯橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、PET和PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂或者氟树脂。这些热塑性树脂中，特别优选离子性杂质少、耐热性高、可以确保半导体元件的可靠性的丙烯酸树脂。
作为所述丙烯酸树脂，没有特别限制，可以列举以具有碳原子数为30以下、特别是碳原子数为4～18的直链或支链烷基的丙烯酸或甲基丙烯酸的酯中的一种或2种以上为成分的聚合物等。作为所述烷基，可以列举例如：甲基、乙基、正丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。
另外，作为用于形成所述聚合物的其它单体，没有特别限制，可以列举，例如，含羧基的单体如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊基、衣康酸、马来酸、富马酸或巴豆酸等；酸酐单体如马来酸酐或衣康酸酐等；含羟基的单体如(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸基、(甲基)丙烯酸-12-羟基月桂酯或(4-羟甲基环己基)甲基丙烯酸酯等；含磺酸基的单体如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺基丙酯或(甲基)丙烯酰氧基萘磺酸等；或者含磷酸基的单体如丙烯酰磷酸-2-羟基乙酯等。
作为所述热固性树脂，可以列举酚树脂、氨基树脂、不聚和聚酯树脂、环氧树脂、聚氨酯树脂、硅酮树脂或热固性聚酰亚胺树脂等。这些树脂可以单独使用或者2种以上组合使用。特别优选腐蚀半导体元件的离子性杂质等含量低的环氧树脂。另外，优选酚树脂作为环氧树脂的固化剂。
所述环氧树脂，只要是通常作为胶粘剂组合物使用的则没有特别限制，可以使用例如：双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚线型酚醛清漆型、邻甲酚线型酚醛清漆型、三羟苯基甲烷型、四羟苯基乙烷型等双官能环氧树脂或多官能环氧树脂，或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油胺型等环氧树脂。这些环氧树脂可以单独使用或者2种以上组合使用。这些环氧树脂中，特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型树脂或四羟苯基乙烷型环氧树脂。因为该环氧树脂与作为固化剂的酚树脂的反应性好、耐热性等优良。
另外，所述酚树脂作为所述环氧树脂的固化剂起作用，可以列举例如：苯酚线型酚醛清漆树脂、芳烷基酚树脂、甲酚线型酚醛清漆树脂、叔丁酚线型酚醛清漆树脂、壬酚线型酚醛清漆树脂等线型酚醛清漆型酚树脂、甲阶酚醛型酚树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚树脂可以单独使用或者2种以上组合使用。这些酚树脂中，特别优选苯酚线型酚醛清漆树脂、芳烷基酚树脂。因为可以提高半导体装置的连接可靠性。
所述环氧树脂与酚树脂的配合比例，例如，优选使得相对于所述环氧树脂成分中的环氧基1当量，酚树脂中的羟基为0.5～2.0当量。更优选0.8～1.2当量。即，因为两者的配合比例如果在所述范围以外，则不能进行充分的固化反应，环氧树脂固化物的特性容易变差。
另外，在本发明中，特别优选含有环氧树脂、酚树脂及丙烯酸树脂的模片键合膜。这些树脂离子性杂质少并且耐热性高，因此可以确保半导体元件的可靠性。此时的配合比，相对于丙烯酸树脂成分100重量份，环氧树脂与酚树脂的混合量为10～200重量份。
预先使本发明的模片键合膜进行某种程度的交联时，可以在制作时添加能够与聚合物的分子链末端官能团等反应的多官能化合物作为交联剂。由此，可以提高高温下的胶粘特性、改善耐热性。
作为所述交联剂，可以使用以往公知的交联剂。特别优选甲苯二异氰酸酯、二苯甲烷二异氰酸酯、对苯二异氰酸酯、1，5-萘二异氰酸酯、多元醇与二异氰酸酯的加成物等多异氰酸酯化合物。作为交联剂的添加量，相对于所述聚合物100重量份，通常优选设定为0.05～7重量份。如果交联剂的量超过7重量份，则胶粘力下降，因此不优选。另一方面，如果少于0.05重量份，则凝集力不足，因此不优选。另外，根据需要，也可以与这样的多异氰酸酯化合物一起含有环氧树脂等其它多官能化合物。
另外，在模片键合膜中，根据其用途可以适当混合无机填充剂(填料)。无机填充剂的混合可以赋予导电性、提高导热性、调节弹性模量等。作为所述无机填充剂，可以列举例如：陶瓷类如二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等；金属如铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等，或者合金类；其它含碳等的各种无机粉末。这些物质可以单独使用或者2种以上组合使用。其中，可以优选使用二氧化硅，特别是熔融二氧化硅。另外，无机填充剂的平均粒径优选在0.1～80μm的范围内。
所述无机填充剂的混合量，相对于有机树脂成分100重量份优选设定为大于0重量份、且不超过80重量份。特别优选大于0重量份、且不超过70重量份。另外，热固化后在250℃下的拉伸储能弹性模量设定为10MPa以上时，无机填充剂的混合量相对于有机树脂成分100重量份优选设定为10重量份以上；设定为100MPa以下时，相对于有机树脂成分100重量份优选设定为100重量份以下。另外，将重量减少量设定为1重量％以下时，无机填充剂的混合量相对于有机树脂成分100重量份优选大于0重量份。
另外，模片键合膜中，除所述无机填充剂以外，根据需要可以适当混合其它添加剂。作为其它添加剂，可以列举例如阻燃剂、硅烷偶联剂或离子捕捉剂等。
作为所述阻燃剂，可以列举例如三氧化锑、五氧化锑、溴化环氧树脂等。这些物质可以单独使用或者2种以上组合使用。
作为所述硅烷偶联剂，可以列举例如β-(3，4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。
作为所述离子捕捉剂，可以列举例如水滑石类、氢氧化铋等。这些物质可以单独使用或者两种以上组合使用。
模片键合膜的厚度(层压体的情况下为总厚度)没有特别限制，例如为约5～约100μm、优选约5～约50μm。
(半导体装置的制造方法)
以下，对使用本实施方式的模片键合膜的半导体装置的制造方法进行说明。图1是表示通过模片键合膜安装半导体元件的例子的示意剖视图。
本实施方式的半导体装置的制造方法，包括：在衬底或引线框(被粘物，以下仅称为衬底等)6上用模片键合膜3a粘着半导体芯片(半导体元件)5的粘着工序；和不经过加热工序而进行丝焊的丝焊工序。另外包括：用密封树脂8密封半导体芯片5的密封工序；和将该密封树脂8后固化的后固化工序。
所述粘着工序，如图1所示，是通过模片键合膜3a将半导体芯片5粘着到衬底等6上的工序。该工序中，通过加热模片键合膜3a使其热固化，将半导体芯片5粘结固定在被粘物6上，提高耐热强度。作为加热条件，温度在80～180℃的范围内，并且加热时间在0.1～24小时、优选0.1～4小时、更优选0.1～1小时的范围内是优选的。另外，作为将半导体芯片5粘着到衬底等6上的方法，可以列举例如在衬底等6上层压模片键合膜3a后，在模片键合膜3a上依次层压粘着半导体芯片5使得丝焊面为上侧的方法。另外，也可以在衬底等6上粘着和层压预先粘着了模片键合膜3a的半导体芯片5。
另外，本发明中，也可以不使模片键合膜3a热固化，而是仅在被粘物6上暂时粘着。之后，也可以不经过加热工序进行丝焊，另外用密封树脂将半导体芯片密封，并将该密封树脂后固化。作为将半导体芯片5暂时粘着到衬底等6上的方法，可以列举例如在衬底等6上层压模片键合膜3a后，在模片键合膜3a上依次层压而暂时粘着半导体芯片5使得丝焊面为上侧的方法。另外，也可以在衬底等6上暂时粘着和层压预先暂时粘着了模片键合膜3a的半导体芯片5。
作为所述衬底，可以使用现有公知的衬底。另外，作为所述引线框，可以使用Cu引线框、42合金引线框等金属引线框，以及由玻璃环氧树脂、BT(双马来酰亚胺-三嗪)、聚酰亚胺等构成的有机衬底。但是，本发明不限定于此，也包括安装半导体元件，并与半导体元件电连接后可以使用的电路衬底。
作为所述模片键合膜3a，使用暂时粘着时的剪切胶粘力对衬底等6为0.2MPa以上的模片键合膜，更优选使用在0.2～10MPa范围内的模片键合膜。模片键合膜3a的剪切胶粘力至少为0.2MPa以上，因此即使不经过加热工序而进行丝焊工序，也不会因为该工序中的超声波振动和加热而在模片键合膜3a与半导体芯片5或衬底等6的胶粘面上产生剪切变形。即，半导体元件不会由于丝焊时的超声波振动而活动，由此防止丝焊的成功率下降。
所述丝焊工序，是通过焊线7将衬底等6的端子部(内部引线)的顶端与半导体芯片5上的电极板(未图示)进行电连接的工序。作为所述焊线7，可以使用例如金线、铝线或铜线等。进行丝焊时的温度可以在80～250℃、优选在80～220℃范围的温度下进行。另外，其加热时间为数秒～数分钟。接线可以在加热到所述温度范围内的状态下，通过将超声波的振动能和施加电压的压接能组合使用而进行的。在所述暂时粘着的情况下，可以不经过加热工序而实施本工序。
本工序可以不进行通过模片键合膜3a的粘着而实施。此时，本工序的过程中，不是通过模片键合膜3a将半导体芯片5与衬底等6粘着。在此，模片键合膜3a的剪切胶粘力即使是在80～250℃的温度范围内也需要为0.2MPa以上。因为如果该温度范围内的剪切胶粘力小于0.2MPa，则丝焊时的超声波振动导致半导体元件活动，不能进行丝焊，成品率下降。
所述密封工序，是通过密封树脂8将半导体芯片5密封的工序。本工序是为了保护衬底等6上安装的半导体芯片5和焊线7而进行的。本工序通过用模具使密封用的树脂成型来进行。作为密封树脂8，使用例如环氧类树脂。树脂密封时的加热温度通常在175℃进行60～90秒，但是，本发明不限于此，例如，可以在165～185℃进行数分钟固化。由此，使密封树脂固化的同时，在所述暂时粘着的情况下通过模片键合膜3a将半导体芯片5与衬底等6粘着。即，本发明中，即使在不进行后述的后固化工序的情况下，也可以在本工序中通过模片键合膜3a进行粘着，可以有助于减少制造工序数以及缩短半导体装置的制造周期。
在所述后固化工序中，使所述密封工序中固化不足的密封树脂8完全固化。即使在密封工序中不利用模片键合膜3a进行粘着的情况下，也可以在本工序中同时实现密封树脂8的固化和通过模片键合膜3a的粘着。本工序中的加热温度随密封树脂的种类而异，例如在165～185℃的范围内，加热时间为约0.5～约8小时。
另外，本发明的切割和模片键合膜，如图2所示，也可以优选用于层压多个半导体芯片进行三维安装的情况。图2是表示通过模片键合膜三维安装半导体芯片的例子的示意剖视图。在图2所示的三维安装的情况下，首先将切割为与半导体芯片相同尺寸的至少一个模片键合膜3a粘着到衬底等6上，然后通过模片键合膜3a将半导体5以其丝焊面为上侧的方式粘着。接着，避开半导体芯片5的电极板部分将模片键合膜13粘着。另外，在模片键合膜13上粘着另一半导体芯片15，使其丝焊面为上侧。该工序中，通过加热模片键合膜3a和13使其热固化而胶粘固定，提高耐热强度。作为加热条件，与前述同样，优选温度在80～200℃的范围内，并且加热时间在0.1～24小时的范围内。
另外，本发明中，也可以不使模片键合膜3a和13热固化而仅仅使其暂时粘着。之后，可以不经过加热工序而进行丝焊，另外通过密封树脂将半导体芯片密封，并将该密封树脂后固化。
然后，进行丝焊工序。由此，通过焊线7将半导体芯片5及另一半导体芯片15中各个电极板与衬底等6电连接。另外，在前述暂时粘着的情况下，可以不经过加热工序而实施本工序。
接着，进行通过密封树脂8将半导体芯片5等密封的密封工序，使密封树脂固化。与此同时，在前述暂时粘着的情况下通过模片键合膜3a将衬底等6与半导体芯片5之间粘着。另外，也通过模片键合膜13将半导体芯片5与另一半导体芯片15之间粘着。另外，密封工序后，也可以进行后固化工序。
即使在半导体芯片的三维安装的情况下，由于不通过模片键合膜3a和13的加热进行加热处理，因此可以简化制造工序并且提高成品率。另外，衬底等6不产生翘曲、半导体芯片5和另一半导体芯片15上也不产生裂纹，因此可以实现半导体元件的进一步薄型化。
另外，如图3所示，也可以进行在半导体芯片间通过模片键合膜层压衬垫的三维安装。图3是表示利用模片键合膜通过衬垫而将二个半导体芯片进行三维安装的例子的示意剖视图。
在如图3所示的三维安装的情况下，首先，在衬底等6上依次层压并粘着模片键合膜3a、半导体芯片5及模片键合膜21。另外，在模片键合膜21上，依次层压并粘着衬垫9、模片键合膜21、模片键合膜3a及半导体芯片5。在该工序中，通过加热模片键合膜3a和21使其热固化而胶粘固定，提高耐热强度。作为加热条件，与前述同样，优选温度在80～200℃的范围内，并且加热时间在0.1～24小时的范围内。
另外，在本发明中，也可以不使模片键合膜3a和21热固化而仅仅使其暂时粘着。之后，可以不经过加热工序而进行丝焊，另外通过密封树脂将半导体芯片密封，并将该密封树脂后固化。
然后，如图3所示，进行丝焊工序。由此，通过焊线7将半导体芯片5中的电极板与衬底等6电连接。另外，在前述暂时粘着的情况下，也可以不经过加热工序而实施本工序。
接着，进行通过密封树脂8将半导体芯片5密封的密封工序，使密封树脂8固化，与此同时，在前述暂时粘着的情况下通过模片键合膜3a和21将衬底等6与半导体芯片5之间、以及半导体芯片5与衬垫9之间粘着。由此，可以得到半导体封装。密封工序优选仅将半导体芯片5一侧单面密封的整体密封法。密封是为了保护粘贴到粘合片上的半导体芯片5而进行的，其代表方法为使用密封树脂8，用模具进行成型。此时，一般是使用具有多个腔室的上模具和下模具组成的模具，同时进行密封工序。树脂密封时的加热温度，例如优选在170～180℃的范围内。密封工序后，也可以进行后固化工序。
另外，作为前述衬垫9，没有特别限制，例如可以使用现有公知的硅片、聚酰亚胺膜等。另外，作为前述衬垫，可以使用芯材。作为芯材没有特别限制，可以使用现有公知的芯材。具体而言，可以使用膜(例如，聚酰亚胺膜、聚酯膜、聚对苯二甲酸乙二醇酯膜、聚萘二甲酸乙二醇酯膜、聚碳酸酯膜等)、玻璃纤维或塑料无纺纤维增强的树脂衬底、镜面硅圆片、硅衬底或玻璃衬底等。
另外，如图4所示，也可以不使用前述衬垫9，而是进行通过焊线的一部分嵌入其中的模片键合膜而层压多个半导体芯片5的三维安装(FoW(Film on Wire))。图4是表示通过模片键合膜22三维安装两个半导体芯片5的例子的示意剖视图。
在图4所示的三维安装的情况下，首先，在衬底等6上依次层压并暂时粘着模片键合膜3a及半导体芯片5。然后，不进行加热工序，如图4所示，进行丝焊工序。由此，通过焊线7将半导体芯片5中的电极板与衬底等6电连接。
接着，在前述半导体芯片5上层压并暂时粘着预先层压的半导体芯片5和模片键合膜3a。此时，成为焊线7的一部分嵌入模片键合膜22的结构。另外，进行热固化工序，并进行丝焊工序。
之后，进行通过密封树脂8将半导体芯片5密封的密封工序，使密封树脂8固化，与此同时，通过模片键合膜3a和22将衬底等6与半导体芯片5之间、以及半导体芯片5相互之间粘着。由此，可以得到半导体封装。密封工序的条件与前述相同，另外，即使在该方式的情况下，在密封工序之后也可以进行后固化工序。
然后，在印刷电路板上将前述的半导体封装进行表面安装。作为表面安装的方法，可以列举例如：在印刷电路板上预先供给焊料后，通过温风等加热熔融而进行焊接的回流焊接等。作为加热方法，可以列举例如热风回流、红线外回流等。另外，可以是整体加热、局部加热的任何方式。优选加热温度在240～265℃的范围内、加热时间在1～20秒的范围内。
(其它事项)
在前述衬底等上三维安装半导体元件时，在半导体元件的电路形成的面上形成缓冲涂层。作为该缓冲涂层，可以列举例如氮化硅膜或聚酰亚胺树脂等耐热树脂形成的涂层。
另外，在半导体元件的三维安装时，各阶段使用的模片键合膜不限于同一组成的模片键合膜，可以根据制造条件、用途等适当变更。
另外，前述实施方式中，对于在衬底等上层压多个半导体元件后，整体地进行丝焊工序的方式进行了说明，但是，本发明不限于此。例如，也可以在将半导体元件层压到衬底等上时进行丝焊工序。
以下，详细说明本发明的优选实施例。但是，该实施例中所述的材料、混合量等，如果没有特别说明，并不意味着本发明的范围仅限于这些，这些不过是说明例而已。另外，实施例中的“份”是指“重量份”。
(实施例1)
以相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制造，パラクロンW-197CM)100重量份，环氧树脂1(JER株式会社制造，エピコ一ト1004)228重量份、环氧树脂2(JER株式会社制造，エピコ一ト827)206重量份、酚树脂(三井化学株式会社制造，ミレツクスXLC-4L)466重量份、平均粒径0.5μm的球形二氧化硅(アドマテツクス株式会社制造，SO-25R)667重量份和固化催化剂(四国化成株式会社制造，C11-Z)3份的比例将其溶解于甲乙酮中，制备浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的脱模处理膜(剥离衬里)上之后，在130℃干燥2分钟。由此，制得厚度40μm的模片键合膜A。
(实施例2)
以相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制造，パラクロンW-197CM)100份，环氧树脂1(JER株式会社制造，エピコ一ト1004)144份、环氧树脂2(JER株式会社制造，エピコ一ト827)130份、酚树脂(三井化学株式会社制造，ミレツクスXLC-4L)293份、球形二氧化硅(アドマテツクス株式会社制造，SO-25R)444份和固化催化剂(四国化成株式会社制造，C11-Z)2份的比例将其溶解于甲乙酮中，制备浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到作为剥离衬里的、进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的脱模处理膜上之后，在130℃干燥2分钟。由此，制得厚度40μm的模片键合膜B。
(实施例3)
以相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制造，パラクロンW-197CM)100份，环氧树脂1(JER株式会社制造，エピコ一ト1004)101份、环氧树脂2(JER株式会社制造，エピコ一ト827)92份、酚树脂(三井化学株式会社制造，ミレツクスXLC-4L)206份、球形二氧化硅(アドマテツクス株式会社制造，SO-25R)333份和固化催化剂(四国化成株式会社制造，C11-Z)1.5份的比例将其溶解于甲乙酮中，制备浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到作为剥离衬里的、进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的脱模处理膜上之后，在130℃干燥2分钟。由此，制得厚度40μm的模片键合膜C。
(实施例4)
以相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制造，パラクロンW-197CM)100份，环氧树脂1(JER株式会社制造，エピコ一ト1004)76份、环氧树脂2(JER株式会社制造，エピコ一ト827)69份、酚树脂(三井化学株式会社制造，ミレツクスXLC-4L)155份、球形二氧化硅(アドマテツクス株式会社制造，SO-25R)267份和固化催化剂(四国化成株式会社制造，C11-Z)1.2份的比例将其溶解于甲乙酮中，制备浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到作为剥离衬里的、进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的脱模处理膜上之后，在130℃干燥2分钟。由此，制作了厚度40μm的模片键合膜D。
(比较例1)
以相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制造，パラクロンW-197CM)100份，环氧树脂1(JER株式会社制造，エピコ一ト1004)482份、环氧树脂2(JER株式会社制造，エピコ一ト827)436份、酚树脂(三井化学株式会社制造，ミレツクスXLC-4L)983份、球形二氧化硅(アドマテツクス株式会社制造，SO-25R)1333份和固化催化剂(四国化成株式会社制造，C11-Z)6份的比例将其溶解于甲乙酮中，制备浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到作为剥离衬里的、进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的脱模处理膜上之后，在130℃干燥2分钟。由此，制得厚度40μm的模片键合膜E。
(比较例2)
以相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制造，パラクロンW-197CM)100份，环氧树脂1(JER株式会社制造，エピコ一ト1004)59份、环氧树脂2(JER株式会社制造，エピコ一ト827)53份、酚树脂(三井化学株式会社制造，ミレツクスXLC-4L)121份、球形二氧化硅(アドマテツクス株式会社制造，SO-25R)222份和固化催化剂(四国化成株式会社制造，C11-Z)1份的比例将其溶解于甲乙酮中，制备浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到作为剥离衬里的、进行了硅酮脱模处理的厚度为50μm的聚对苯二甲酸乙二醇酯膜构成的脱模处理膜上之后，在130℃干燥2分钟。由此，制得厚度40μm的模片键合膜F。
(熔融粘度)
测定各实施例及比较例的模片键合膜A～F热固化前在100℃下的熔融粘度。测定使用流变仪(HAAKE公司制，RS-1)、通过平行板法进行。即，从各模片键合膜A～F上取0.1g作为试样，将该试样加到预先加热至100℃的板上。熔融粘度为从测定开始300秒后的值。另外，板间的间隙设定为0.1mm。结果如下表1和表2所示。
(空隙面积)
将各实施例和比较例的模片键合膜A～F各自在40℃下粘贴到半导体元件上，在160℃、0.2MPa、2s条件下安装到BGA衬底上。然后，在175℃加热1小时，使各模片键合膜A～F热固化。
另外，用密封树脂(日东电工株式会社制造，GE-100)封装，制备半导体装置(TFBGA封装16×16×0.7mm，芯片尺寸5×5mm)。用玻璃刀切断密封后的半导体装置，用显微镜观察其断面，测定各模片键合膜A～F与BGA衬底的粘贴面中的空隙面积。结果如下表1和表2所示。
(胶粘剂的渗出量)
将各实施例和比较例的模片键合膜A～F在40℃下粘贴到半导体元件上，在160℃、0.2MPa、2s的条件下安装到BGA衬底上。使用光学显微镜测定此时胶粘剂的渗出量。结果如下表1和表2所示。
(吸水率的测定)
对于得到的模片键合膜A～F，由在85℃、85％RH的恒温恒湿槽中放置168小时前后的重量减少率测定热固化后的吸水率。
(重量减少量的测定)
对于得到的模片键合膜A～F，由使用干燥机在210℃下放置1小时前后的重量减少量测定热固化后的重量减少量。
(拉伸储能弹性模量)
对于得到的模片键合膜A～F，使用粘弹性测定装置(RheometicScientific公司制，Solid Analyzer RSII)在升温速度10℃/分钟、频率1MHz下测定热固化后的拉伸储能弹性模量。
(结果)
由下表1和表2所示，确认了如比较例1的模片键合膜E那样，当熔融粘度为300Pa·s时，胶粘剂的渗出量多，为165μm。另外，如比较例2的模片键合膜F那样，当熔融粘度为3500Pa·s时，封装后空隙面积大，为8.9体积％。
另一方面，如实施例1～4的模片键合膜A～D那样，当熔融粘度分别为500、800、1400、2000Pa·s时，胶粘剂没有渗出，并且封装后的空隙面积也极小。由此可知，本实施例所涉及的模片键合膜A～D，在模片键合工序中，与半导体元件的密合性优良，并且不产生由于胶粘剂的渗出而导致的衬底或半导体芯片的污染。
表1
Figure BSA00000568801700201
表2
Figure BSA00000568801700202

Claims (6)

1.一种热固化型模片键合膜，其在制造半导体装置时使用，其特征在于，
含有5～15重量％热塑性树脂成分及45～55重量％热固性树脂成分为主成分，
所述热塑性树脂成分为丙烯酸树脂成分，并且所述热固性树脂成分为环氧树脂成分和酚树脂成分，
相对于有机树脂成分100重量份含有10重量份以上且80重量份以下的无机填料，
并且
热固化前的100℃下的熔融粘度为400Pa·s以上且2500Pa·s以下，
通过加热热固化后在85℃、85％RH的环境下放置168小时时的吸湿率为1重量％以下。
2.权利要求1所述的热固化型模片键合膜，其特征在于，
所述模片键合膜的热固化后的250℃下的拉伸储能弹性模量为10MPa以上。
3.权利要求1所述的热固化型模片键合膜，其特征在于，
通过加热热固化后在250℃加热1小时后的重量减少量为1重量％以下。
4.权利要求1所述的热固化型模片键合膜，其特征在于，
所述环氧树脂成分和酚树脂成分的配合比例，是所述环氧树脂成分中的每1当量环氧基，酚树脂成分中的羟基为0.5～2.0当量。
5.权利要求4所述的热固化型模片键合膜，其特征在于，
相对于所述丙烯酸树脂成分100重量份，环氧树脂成分和酚树脂成分的混合量为10～200重量份。
6.一种切割和模片键合膜，其特征在于，
权利要求1所述的热固化型模片键合膜层压在粘合膜上。
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JP4732472B2 (ja) 2011-07-27
US7611926B2 (en) 2009-11-03
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