CN100392831C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN100392831C
CN100392831C CNB2004101006656A CN200410100665A CN100392831C CN 100392831 C CN100392831 C CN 100392831C CN B2004101006656 A CNB2004101006656 A CN B2004101006656A CN 200410100665 A CN200410100665 A CN 200410100665A CN 100392831 C CN100392831 C CN 100392831C
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sheet adhesive
semiconductor device
semiconductor element
manufacture method
resin
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CN1630050A (zh
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三隅贞仁
松村健
细川和人
近藤广行
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Nitto Denko Corp
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Nitto Denko Corp
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Abstract

一种半导体装置的制造方法，包括通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序、和不经过加热工序而直接进行引线接合的引线接合工序，且所述胶粘片相对于被粘附体的临时固着时的剪切胶粘力在0.2MPa以上。由此，可以提供在抑制合格率下降的同时将制造工序简略化的半导体装置的制造方法、用于该方法的胶粘片和由该方法得到的半导体装置。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种半导体装置的制造方法、用于该方法的胶粘片和由该方法得到的半导体装置。
背景技术
为了适应于半导体装置的微细化、高性能化的要求，设置在半导体芯片(半导体元件)主平面的整个区域上的电源线的配线宽度和信号线间的间隔逐渐趋向于变窄。由此，会发生阻抗的增加和不同种类结点(node)的信号线之间的信号干扰，这在半导体芯片的工作速度、工作电压容限、耐静电破坏强度等方面，会成为阻碍其性能充分发挥的主要原因。为了解决这些问题，提出了层叠有半导体元件的封装结构(参考特开昭55-111151号公报和特开2002-261233号公报)。
另一方面，作为在基板等上固定粘着半导体元件时使用的物质，提出了使用热固化性糊状树脂的例子(例如，参考特开2002-179769号公报)或者使用混合使用了热塑性树脂和热固化性树脂的胶粘片的例子(例如，参考特开2000-104040号公报以及特开2002-261233号公报)。
在以往的半导体装置的制造方法中，在粘接半导体元件和基板、引线框或者半导体元件时，使用胶粘片或者胶粘剂。粘接是在压接半导体元件和基板等后(模片固定)，通过加热工序使胶粘片等固化来进行。还进行引线接合(wire bonding)，以便将半导体元件和基板电连接，然后用密封树脂进行模压，之后再经后固化进行该密封树脂的密封。
但是，在进行引线接合时，基板等上的半导体元件会因超声波振动或加热发生移动。因此，以往需要在引线接合之前进行加热工序，将热固化性糊状树脂或热固化性胶粘片加热固化，固定半导体元件，以避免其发生移动。
另外，在由热塑性树脂组成的胶粘片和混合使用了热固化性树脂和热塑性树脂的胶粘片中，需要在模片固定后、引线接合前进行加热工序，以便确保与粘接对象物的胶粘力并提高浸湿性。
但是，如果在引线接合之前进行胶粘片等的加热，会存在由胶粘片等产生挥发气体的问题。挥发气体会污染接合区，在大多数情况下不能进行引线接合。
另外，如果将胶粘片等加热固化，会产生该胶粘片等的固化收缩等。由此产生的应力，会使引线框或者基板(同时也可以在半导体元件上)产生弯曲。除此之外，在引线接合工序中，也存在因应力而引起半导体元件产生裂纹的问题。近年来，随着半导体元件的薄型化、小型化，半导体元件的厚度由以往的200μm薄化为其以下，进一步变为100μm以下，在目前的这种情况下，基板等的弯曲和半导体元件的裂纹问题就会变得更加严重，从而解决该问题就会变得越发重要。
发明内容
本发明是鉴于上述问题而提出的，其目的在于提供在使合格率提高的同时将制造工序简略化的半导体装置的制造方法、用于该方法的胶粘片和由该方法得到的半导体装置。
为了解决上述问题，本发明的半导体装置的制造方法的特征在于，具有通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序和不经过加热工序而进行引线接合的引线接合工序，且将上述胶粘片相对于被粘附体临时固着时的剪切胶粘力为0.2MPa以上。
上述被粘附体优选是基板、引线框或者半导体元件。
另外，本发明的半导体装置的制造方法包括用密封树脂将上述半导体元件密封的密封工序、和进行上述密封树脂的后固化的后固化工序，在上述密封工序和/或后固化工序中，在通过加热使密封树脂固化的同时，可以通过介入上述胶粘片固着半导体元件和被粘附体。
当上述被粘附体是半导体元件时，优选包括在半导体元件和半导体元件之间通过介入上述胶粘片而层叠隔板的工序，且上述胶粘片相对于隔板或者半导体元件的临时固着时的剪切胶粘力为0.2MPa以上。
另外，在上述密封工序和/或后固化工序中，可以在由加热使密封树脂固化的同时，通过介入上述胶粘片固着半导体元件和隔板。
上述引线接合工序优选在80℃-250℃下进行。
另外，作为上述胶粘片，可以使用含有热塑性树脂的胶粘片。另外，作为上述胶粘片，也可以使用含有热固化性树脂和热塑性树脂这两者的胶粘片。
在这里，作为上述热固化性树脂，优选使用环氧树脂和/或酚醛树脂。另外，作为上述热塑性树脂，优选使用丙烯酸树脂。
另外，当作为上述胶粘片混合使用热固化性树脂和热塑性树脂时，优选使用加入交联剂的材料。
另外，为了解决上述课题，本发明的胶粘片的特征在于，是在具有通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序和不经过加热工序而进行引线接合的引线接合工序的半导体装置的制造方法中使用的胶粘片，上述胶粘片相对于被粘附体的临时固着时的剪切胶粘力为0.2MPa以上。
另外，为了解决上述课题，本发明的半导体装置是通过下述半导体装置的制造方法获得的装置，所述半导体装置的制造方法具有通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序和不经过加热工序而进行引线接合的引线接合工序，并且作为上述胶粘片，使用相对于被粘附体的临时固着时的剪切胶粘力为0.2MPa以上的胶粘片。
按照本发明的结构，由于胶粘片相对于被粘附体的临时固着时的剪切胶粘力为0.2MPa以上，所以即使省略了胶粘片的加热工序而直接转至引线接合工序，胶粘片和被粘附体也不会因该工序中的超声波振动或加热而在胶粘面上产生移位变形。因此，可以抑制进行引线接合时的合格率的下降。
另外，在以往的制造方法中，在引线接合工序之前进行胶粘片的加热，有时因该加热，胶粘片会产生挥发气体而污染接合区。但是本发明中不需要这种工序，所以可以提高合格率。另外，由于省略了加热胶粘片的工序，所以也不会在基板等上产生弯曲，或者在半导体元件上产生裂纹。结果，半导体元件还可以变得更加薄型化。
另外，用上述胶粘片进行的固着，可以在将密封树脂密封的树脂密封工序、和/或在上述树脂密封工序后进行的密封树脂的后固化工序中，与加热同时进行，所以可使制造工序简单化。
在这里，上述引线接合工序是在80℃-250℃下进行数秒至数分钟，所以在该工序中，用胶粘片不能将半导体元件和被粘附体等完全固着。
作为上述胶粘片，可以使用含有热塑性树脂的材料，或者使用含有热固化性树脂和热塑性树脂两者的材料。
另外，作为上述热固化性树脂，优选使用环氧树脂和/或酚醛树脂，而作为上述热塑性树脂，优选使用丙烯酸树脂。这些树脂由于离子性杂质少且耐热性高，可以确保半导体元件的可靠性。
另外，作为上述胶粘片，优选使用加入了交联剂的材料。
在上述半导体元件上通过介入上述胶粘片层叠一个或者两个以上半导体元件的情况、或根据需要在上述半导体元件和半导体元件之间通过介入上述胶粘片层叠隔板的情况下，以上所述的内容也都具有同样的作用效果。另外，在多个半导体元件等的三维安装中，上述制造工序的简单化可以使制造效率进一步提高。
本发明其它的目的、特征和优点将通过以下所示的说明进行充分地解释。另外，本发明的优点将在参考附图的以下说明中更加明显。
附图说明
图1(a)～1(c)是用于说明本发明的实施方式1的半导体装置的制造方法的工序图。
图2(a)～2(e)是用于说明本发明的实施方式2的半导体装置的制造方法的工序图。
图3(a)～3(g)是用于说明本发明的实施方式3的半导体装置的制造方法的工序图。
图4(a)～4(e)是用于说明本发明的实施方式4的半导体装置的制造方法的工序图。
图5(a)～5(e)是用于说明本发明的实施方式5的半导体装置的制造方法的工序图。
图6(a)～6(c)是用于说明本发明的实施方式6的半导体装置的制造方法的工序图。
图7是表示由上述实施方式6的半导体装置的制造方法得到的半导体装置的概况的剖面图。
图8(a)、8(b)是用于说明本发明的实施方式7的半导体装置的制造方法的工序图。
具体实施方式
(实施方式1)
参考图1(a)～1(c)说明本发明的实施方式1。图1(a)～1(c)是用于说明本发明的实施方式的半导体装置的制造方法的工序图。但是，在说明中省略了不需要说明的部分，另外，对部分结构进行了放大或者缩小等，以便易于说明。这在以下的附图中也是如此。
本实施方式中的半导体装置的制造方法，具有在基板或者引线框(被粘附体，以下仅称为基板等)11上用胶粘片12将半导体元件13临时固着的固着工序、和不经过加热工序而进行引线接合的引线接合工序。另外，还具有用密封树脂15将半导体元件13密封的密封工序和将该密封树脂15后固化的后固化工序。
如图1(a)中所示，上述临时固着工序是通过介入胶粘片12将半导体元件13临时固着在基板等11上的固着工序。作为在基板等11上将半导体元件13临时固着的方法，可列举例如在基板等11上层叠胶粘片12后，在胶粘片12上依次层叠半导体元件13而使引线接合面位于上侧后进行临时固着的方法。另外，也可以在基板等11上临时固着预先临时固着有胶粘片12的半导体元件13后进行层叠。
作为上述基板，可以使用以往公知的材料。另外，作为上述引线框，可以使用Cu引线框、42合金引线框等金属引线框或由玻璃钢板、BT(双马来酸酐缩亚胺-三嗪)、聚酰亚胺等组成的有机基板。但是，本发明并不限于此，还包括可以固定(mount)半导体元件并与半导体元件电连接后使用的电路基板。
作为上述胶粘片12，使用的是临时固着时的剪切胶粘力相对于基板等11为0.2MPa以上的材料，更优选使用0.2-10MPa范围内的材料。胶粘片12的剪切胶粘力至少为0.2MPa以上，所以即使不经过加热工序而直接进行引线接合工序，胶粘片12和半导体元件13或者基板等11也不会在胶粘面上因该工序中的超声波振动或加热而产生移位变形。即，半导体元件不会因引线接合时的超声波振动而移动，因此，可防止引线接合的成功率下降。关于胶粘片12，以后进行更加详细的描述。
上述引线接合工序是用接合线14将基板等11的端子部分(内部引线)的前端和半导体元件13上的电极垫片(未图示)电连接的工序(参考图1(b))。作为上述接合线14，可使用例如金线、铝线或者铜线等。进行引线接合时的温度为80-250℃，优选在80-220℃的范围内进行。另外，该加热时间为数秒～数分钟。接线是在加热至如上所述的温度范围内的条件下，同时利用由超声波产生的振动能量和由外加压力产生的压接能量进行。
实施本工序时，不进行利用胶粘片12的固着。另外，在实施本工序的过程中，不用胶粘片12固着半导体元件13和基板等11。在这里，胶粘片12的剪切胶粘力即使在80-250℃的温度范围内，也需要在0.2MPa以上。在该温度范围内剪切胶粘力如果不足0.2MPa，则在引线接合时半导体元件会因超声波振动而移动，不能进行引线接合，从而会导致合格率下降。
上述密封工序是用密封树脂15将半导体元件13密封的工序(参考图1(c))。本工序是为了保护在基板等11上装载的半导体元件13和接合线14而进行的。进行本工序时，用金属模成形密封用的树脂。作为密封树脂15，使用例如环氧类的树脂。密封树脂时的加热温度通常为175℃，并进行60-90秒，但是本发明并不限于此，可以在例如165-185℃下固化数分钟。由此，在使密封树脂固化的同时，通过介入胶粘片12固着半导体元件13和基板等11。即，在本发明中，即使在不进行下述的后固化工序的情况下，也可以在本工序中用胶粘片12进行固着，这有助于减少制造工序和缩短半导体装置的制造周期。
在上述后固化工序中，使在上述密封树脂中未固化充分的密封树脂15完全固化。即使在密封工序中未用胶粘片12进行固着的情况下，也可以在本工序中，在使密封树脂15固化的同时利用胶粘片12固着。本工序中的加热温度随密封树脂的种类不同而不同，例如在165-185℃的范围内，加热时间为约0.5-8小时。
在这里，对于上述胶粘片12进行详述。作为胶粘片12，只要是在引线接合时能获得0.2MPa以上的剪切胶粘力，则对其结构没有特别的限制。具体地讲，可以举例为例如只由胶粘剂层的单层组成的胶粘片、在芯部材料的单面或者双面上形成有胶粘剂层的多层结构的胶粘片等。在这里，作为上述芯部材料，可列举用薄膜(例如聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚碳酸酯薄膜等)、玻璃纤维或塑料制无纺织纤维增强的树脂基板、硅基板或者玻璃基板等。另外，还可以使用胶粘片和切片(dicing sheet)的一体化材料。
上述胶粘剂层是具有胶粘功能的层，作为其构成材料，可列举混合使用热塑性树脂和热固化性树脂的材料。另外，也可以单独使用热塑性树脂。
作为上述热塑性树脂，可列举天然橡胶、异丁橡胶、异戊橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙6和尼龙66等聚酰胺树脂、苯氧基树脂、丙烯酸树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或者含氟树脂等。这些热塑性树脂可以单独使用或者二种以上混合使用。在这些热塑性树脂之中，特别优选离子性杂质少且耐热性高并可以确保半导体元件的可靠性的丙烯酸树脂。
作为上述丙烯酸树脂，没有特别的限制，可列举作为成分含有具有碳原子数30以下、特别是碳原子数4-18的直链或者支链的烷基的丙烯酸或者甲基丙烯酸的酯的一种或者二种以上的聚合物等。作为上述烷基，可列举例如甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或者十二烷基等。
另外，作为形成上述聚合物的其它单体，没有特别的限制，可列举如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或者巴豆酸等含有羧基的单体；如马来酸酐或者衣康酸酐等酸酐单体；如(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸6-羟己酯、(甲基)丙烯酸8-羟辛酯、(甲基)丙烯酸10-羟癸酯、(甲基)丙烯酸12-羟月桂基酯或者丙烯酸(4-羟甲基环己基)甲酯等含有羟基的单体；如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯或者(甲基)丙烯酰氧基萘磺酸等含有磺酸基的单体；或者如2-羟乙基丙烯酰基磷酸酯等含有磷酸基的单体。
作为上述热固化性树脂，可列举酚醛树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、硅酮树脂、或者热固化性聚酰亚胺树脂等。这些树脂可以单独使用或者二种以上混合使用。特别优选使半导体元件腐蚀的离子性杂质等的含量较少的环氧树脂。另外，作为环氧树脂的固化剂优选酚醛树脂。
作为上述环氧树脂，只要是通常被用作胶粘剂组合物的物质，就没有特别地限制，可使用例如双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三羟基苯基甲烷型、四羟苯基乙烷型等二官能环氧树脂和多官能环氧树脂，或者乙内酰脲型、三缩水甘油基三聚异氰酸酯型或者缩水甘油胺型等环氧树脂。这些可以单独使用或者二种以上混合使用。
在这些环氧树脂之中特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯基甲烷型树脂或者四羟苯基乙烷型环氧树脂。这是由于这些环氧树脂作为固化剂富于与酚醛树脂的反应性，耐热性良好。
另外，上述酚醛树脂是作为上述环氧树脂的固化剂作用的物质，并可列举例如苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、可溶型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些可以单独使用或者二种以上混合使用。在这些酚醛树脂之中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为这些可以提高半导体装置的连续可靠性。
上述环氧树脂和酚醛树脂的混合比例，优选为例如每1当量上述环氧树脂成分中的环氧基，混合0.5-2.0当量的酚醛树脂中的羟基。更适合的是0.8-1.2当量。即，这是因为如果两者的混合比例不在上述范围内，则不能进行充分的固化反应，环氧树脂固化物的特性容易变差。
另外，在本发明中，特别优选含有环氧树脂、酚醛树脂和丙烯酸树脂的胶粘片。由于这些树脂中离子性杂质少且耐热性高，所以可以确保半导体元件的可靠性。这时的混合比是，相对于100重量份丙烯酸树脂成分，环氧树脂和酚醛树脂的混合量为10-200重量份。
制作本发明的胶粘片12时，最好事先加入作为交联剂的可与聚合物分子链末端的官能团等反应的多官能性化合物，以便预先使其交联一定程度。由此，可以使高温下的胶粘特性提高，改善耐热性。
作为上述交联剂，可以使用以往公知的物质。特别优选甲苯撑二异氰酸酯、二苯基甲烷二异氰酸酯、对苯撑二异氰酸酯、1，5-萘二异氰酸酯、多元醇和二异氰酸酯的加成物等聚异氰酸酯化合物。作为交联剂的加入量，相对于100重量份上述聚合物通常优选为0.05-7重量份。交联剂的加入量如果多于7重量份，则胶粘力会下降，所以不优选。另一方面，如果少于0.05重量份，则由于凝聚力不足，所以也不优选。另外，根据需要也可以与聚异氰酸酯化合物一同含有环氧树脂等其它的多官能性化合物。
另外，在本发明的胶粘片12中，可以根据其用途适当混合无机填充剂。通过混合无机填充剂可以赋予导电性并提高导热性、调节弹性率。作为上述无机填充剂，可列举例如硅石、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类，铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊锡等金属，或者合金类，由其它石墨等组成的各种无机粉末。这些可以单独使用或者二种以上混合使用。其中，适合使用硅石，特别适合使用熔化硅石。另外，无机填充剂的平均粒径优选为0.1-80μm的范围内。
上述无机填充剂的混合量相对于100重量份有机树脂成分优选为0-80重量％。特别优选为0-70重量％。
另外，在本发明的胶粘片12中，除了上述无机填充剂以外，还可以根据需要适当混合其它的添加剂。作为其它的添加剂，可列举例如阻燃剂、硅烷偶合剂或者离子跟踪剂等。
作为上述阻燃剂，可列举例如三氧化锑、五氧化锑、溴化环氧树脂等。这些可以单独使用或者二种以上混合使用。
作为上述硅烷偶合剂，可列举例如β-(3，4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者二种以上混合使用。
作为上述离子跟踪剂，可列举例如水滑石类、氢氧化铋等。这些可以单独使用或者二种以上混合使用。
(实施方式2)
参考图2(a)～2(e)说明本实施方式2中的半导体装置的制造方法。图2(a)～2(e)是用于说明本实施方式中的半导体装置的制造方法的工序图。
与上述实施方式1中的半导体装置相比，本实施方式中的半导体装置的不同点是通过层叠多个半导体元件进行三维安装。更加详细地讲，不同点在于包括在半导体元件上通过介入上述胶粘片层叠其它半导体元件的工序。
首先，如图2(a)中所示，在作为被粘附体的基板等11上临时固着切割成规定尺寸的至少一个以上的胶粘片12。接着，在胶粘片12上临时固着半导体元件13，并使引线接合面成为上侧(参考图2(b))。进而，在半导体元件13上避开其电极垫片部分临时固着胶粘片14(参考图2(c))。之后，在胶粘片14上形成半导体元件13，使引线接合面成为上侧(参考图2(d))。
然后，不进行加热工序，如图2(e)中所示，进行引线接合工序。由此，用接合线16电连接半导体元件13中的电极垫片和基板等11。
然后，进行用密封树脂将半导体元件13密封的密封工序，在使密封树脂固化的同时，用胶粘片12、14使基板等11和半导体元件13之间、以及半导体元件13之间固着。另外，在密封工序之后，也可以进行后固化工序。
根据本实施方式，即使在三维安装半导体元件的情况下，由于不进行加热胶粘片12、14的加热处理，所以可使制造工序简单化，提高合格率。另外，由于基板等11上不会发生弯曲，或者半导体元件13上不会产生裂纹，所以半导体元件可以变得更加薄型化。
(实施方式3)
参考图3(a)～3(g)说明本实施方式3中的半导体装置的制造方法。图3(a)～3(g)是用于说明本实施方式中的半导体装置的制造方法的工序图。
与上述实施方式2中的半导体装置相比，本实施方式中的半导体装置不同点是使隔板介入于层叠的半导体元件之间。更加详细地讲，不同点是包括在半导体元件和半导体元件之间通过介入胶粘片层叠隔板的工序。
首先，如图3(a)～3(c)中所示，与上述实施方式2相同，在基板等11上依次层叠胶粘片12、半导体元件13和胶粘片14并进行固着。进而，在胶粘片14上依次层叠隔板21、胶粘片14和半导体元件13并进行固着(参考图3(d)～3(f))。
然后，不进行加热工序，如图3(g)中所示，进行引线接合工序。由此，用接合线16电连接半导体元件13中的电极垫片和基板等11。
之后，进行用密封树脂将半导体元件13密封的密封工序，在使密封树脂固化的同时，用胶粘片12、14使基板等11和半导体元件13之间、以及半导体元件13和隔板21之间固着。另外，在密封工序之后，也可以进行后固化工序。通过进行以上的制造工序，可以获得本实施方式中的半导体装置。
另外，作为上述隔板，没有特别的限制，可以使用例如以往公知的硅片、聚酰亚胺薄膜等。
(实施方式4)
参考图4(a)～4(e)说明本实施方式4中的半导体装置的制造方法。图4(a)～4(e)是用于说明本实施方式中的半导体装置的制造方法的工序图。
首先，如图4(a)中所示，通过将胶粘片12’粘附在半导体晶圆13’的背面上，制作带有胶粘片的半导体晶圆。然后，在半导体晶圆13’上临时固着切割带33(参考图4(b))。进而，将带有胶粘片的半导体晶圆切割为规定的大小，制作成芯片状(参考图4(c))，并从切割带33剥离带有胶粘剂的芯片。
接着，如图4(d)中所示，在基板等11上临时固着带有胶粘片12的半导体元件13，使引线接合面位于上侧。进而，在半导体元件13上临时固着带有胶粘片31的大小不同的半导体元件32，使引线接合面位于上侧。
然后，不进行加热工序，如图4(e)中所示，进行引线接合工序。由此，用接合线16电连接半导体元件13、32中的电极垫片和基板等11。
之后，进行用密封树脂将半导体元件密封的密封工序，在使密封树脂固化的同时，用胶粘片12、31使基板等11和半导体元件13之间、以及半导体元件13和半导体元件32之间固着。另外，在密封工序之后，也可以进行后固化工序。通过进行以上的制造工序，可以获得本实施方式中的半导体装置。
(实施方式5)
参考图5(a)～5(e)说明本实施方式5中的半导体装置的制造方法。图5(a)～5(e)是用于说明本实施方式中的半导体装置的制造方法的工序图。
与上述实施方式4中的半导体装置的制造方法相比，本实施方式中的半导体装置的制造方法的不同点是在切割带33上层叠胶粘片12’后，再在胶粘片12’上层叠半导体晶圆13’。
首先，如图5(a)中所示，在切割带33上层叠胶粘片12’。进而，在胶粘片12’上层叠半导体晶圆13’(参考图5(b))。之后，将带有胶粘片的半导体晶圆切割为规定的大小，制作成芯片状(参考图5(c))，并从切割带33剥离带有胶粘剂的芯片。
接着，如图5(d)中所示，在基板等11上临时固着带有胶粘片12的半导体元件13，使引线接合面位于上侧。进而，在半导体元件13上临时固着带有胶粘片31的不同大小的半导体元件32，使引线接合面位于上侧。这时，半导体元件32的固着是避开下段的半导体元件13的电极垫片部分而进行的。
然后，不进行加热工序，如图5(e)中所示，进行引线接合工序。由此，用接合线16电连接半导体元件13、32中的电极垫片和基板等11中的内部连接用接合区(land)。
之后，进行用密封树脂将半导体元件密封的密封工序，在使密封树脂固化的同时，用胶粘片12、31使基板等11和半导体元件13之间、以及半导体元件13和半导体元件32之间固着。另外，在密封工序之后，也可以进行后固化工序。通过进行以上的制造工序，可以获得本实施方式中的半导体装置。
(实施方式6)
参考图6(a)～6(c)及图7说明本实施方式6中的半导体装置的制造方法。图6(a)～6(c)是用于说明本实施方式中的半导体装置的制造方法的工序图。图7是表示由本实施方式中的半导体装置的制造方法得到的半导体装置的大致结构的截面图。
与上述实施方式3中的半导体装置相比，本实施方式中的半导体装置的不同点是采用芯部材料作为隔板。
首先，与上述实施方式5相同，在切割带33上层叠胶粘片12’。进而，在胶粘片12’上层叠半导体晶圆13’。之后，将带有胶粘片的半导体晶圆切割为规定的大小，制作成芯片状，并从切割带33剥离带有胶粘剂的芯片。由此，获得具备胶粘片12的半导体元件13。
另一方面，在切割带33上形成胶粘片41，在该胶粘片41上粘贴芯部材料42。进而，切割为规定的大小，制作成芯片状，并从切割带33剥离带有胶粘剂的芯片。由此，获得具备胶粘片41’的芯片状芯部材料42’。
接着，在基板等11上通过介入胶粘片12临时固着上述半导体元件13，使引线接合面位于上侧。进而，在半导体元件13上通过介入胶粘片41’临时固着芯部材料42’。之后，在芯部材料42’上通过介入胶粘片12临时固着半导体元件13，使引线接合面位于上侧。通过进行以上的制造工序，可以获得本实施方式中的半导体装置。
然后，不进行加热工序，进行引线接合工序。由此，用接合线16电连接半导体元件13中的电极垫片和基板等11中的内部连接用接合区(参照图7)。
之后，进行用密封树脂将半导体元件密封的密封工序，在使密封树脂固化的同时，用胶粘片12、41’使基板等11和半导体元件13之间、以及半导体元件13和芯部材料42’之间固着。另外，在密封工序之后，也可以进行后固化工序。通过进行以上的制造工序，可以获得本实施方式中的半导体装置。
还有，作为上述芯部材料没有特别的限制，可以使用以往公知的材料。具体地讲，可以使用用薄膜(例如聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚碳酸酯薄膜等)、玻璃纤维或塑料制无纺织纤维增强的树脂基板、镜式硅晶圆、硅基板或者玻璃基板等。
(实施方式7)
参考图8(a)和8(b)说明本实施方式7中的半导体装置的制造方法。图8(a)和8(b)是用于说明本实施方式中的半导体装置的制造方法的工序图。
与上述实施方式6中的半导体装置的制造方法相比，本实施方式中的半导体装置的制造方法的不同点是通过冲孔等进行芯片化，并以此来代替芯部材料的切割。
首先，与上述实施方式6相同地获得具备胶粘片12的半导体元件13。另一方面，在胶粘片41上粘贴芯部材料42。进而，冲切为规定的大小，制作成芯片状，由此获得具备胶粘片41’的芯片状的芯部材料42’。
接着，与上述实施方式6相同，通过介入胶粘片12、41’依次层叠芯部材料42’和半导体元件13，并进行临时固着。
另外，进行引线接合工序、密封工序、根据需要而加的后固化工序，获得本实施方式中的半导体装置。
(其它的事项)
在上述基板等上三维安装半导体元件时，在形成有半导体元件的电路的一侧面上，形成缓冲涂膜。作为该缓冲涂膜，可列举例如氮化硅膜或由聚酰亚胺树脂等耐热树脂构成的涂膜。
另外，在三维安装半导体元件时，各段使用的胶粘片并不限于由同一组成构成的胶粘片，可以根据制造条件或用途等适当改变。
此外，在上述实施方式中所述的层叠方法是作为例子所举的方法，可以根据需要适当改变。例如，在上述实施方式2的半导体装置的制造方法中，也可以用上述实施方式3中所述的层叠方法层叠第2段以后的半导体元件。
还有，在上述实施方式中，叙述了在基板等上层叠多个半导体元件后，统一进行引线接合工序的方式，但是本发明并不限于此。例如，也可以在每次在基板等上层叠半导体元件时进行引线接合工序。
实施例
下面，根据实施例，具体说明本发明的内容。
(实施例1)
在甲乙酮中，相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业(株)制，パラクロンW-197CM)，溶解3份多官能异氰酸酯类交联剂、23份环氧树脂(日本环氧树脂(株)制，エピコ一ト1004)、6份酚醛树脂(三井化学(株)制，ミレツクスXLC-CC)，调制浓度为20重量％的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布在作为剥离垫板的经硅酮脱模处理的由聚对苯二甲酸乙二酯薄膜(厚50μm)组成的脱模处理薄膜上。另外，通过在120℃下使其干燥3分钟，制作25μm厚的本实施例1的胶粘片。
(实施例2)
在本实施例2中，除了使用以丙烯酸丁酯为主成分的聚合物(根上工业(株)制，パラクロンSN-710)代替在实施例1中使用的丙烯酸酯类聚合物以外，与上述实施例1相同地制作本实施例2中的胶粘片(厚50μm)。
(比较例1)
在甲乙酮中，相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业(株)制，パラクロンW-197CM)，溶解23份环氧树脂(日本环氧树脂(株)制，エピコ一ト1004)、6份酚醛树脂(三井化学(株)制，ミレツクスXLC-CC)，调制浓度为20重量％的胶粘剂组合物溶液。
将该胶粘剂组合物溶液涂布在作为剥离垫板的经硅酮脱模处理的由聚对苯二甲酸乙二酯薄膜(厚50μm)组成的脱模处理薄膜上。另外，通过在120℃下使其干燥3分钟，制作比较例1的胶粘片(厚25μm)。
(比较例2)
在本比较例2中，除了使用以丙烯酸丁酯为主成分的聚合物(根上工业(株)制，パラクロンSN-710)代替在实施例1中使用的丙烯酸酯类聚合物以外，与上述比较例1相同地制作比较例2中的胶粘片(厚25μm)。
[剪切胶粘力测量]
对于在上述实施例和比较例中制作的胶粘片，如下测量其相对于基板、引线框或者半导体元件的临时固着时的剪切胶粘力。
首先，制作有关于基板、引线框或者半导体元件的各种试样。
即，在基板(UniMicron Technology Corporation制，商品名TFBGA16×16(2216-001A01))的情况下，使用了从隔板剥离得到的胶粘片后切割为2mm□的材料。另一方面，切割氧化铝蒸镀晶圆，制作长2mm×宽2mm×厚500μm的芯片。通过模片固定将该芯片配置在基板上，以制作试验片。模片固定是在120℃的温度下施加负荷(0.25MPa)、加热1秒钟的条件下，使用芯片焊接机(die bonder)((株)新川制SPA-300)来进行。
另外，即使在引线框(新光电气株式会社制，商品名CA-F313(MF202))的情况下，也可与上述基板相同地制作试验片。
此外，在半导体元件的情况下，使用了从隔板剥离得到的胶粘片后切割为6mm□的材料。在引线框(新光电气株式会社制，商品名CA-F313(MF202))的冲模垫(die pad)上，通过模片固定，配置将形成有评价用模块图案的评价用元件(フエニツクス·セミコンダクタ-(株)制，型号：NT-103，钝化层
Figure C20041010066500191
厚)切割为长6mm×宽6mm×厚500μm的元件。然后，使用将上述胶粘片切割为2mm□的材料，通过模片固定，将从氧化铝蒸镀晶圆切出的长2mm×宽2mm×厚500μm的芯片配置在上述评价用元件上，制作试验片。在与基板和引线框的情况相同的条件下进行模片固定。
剪切胶粘力的测量中，在可以控制温度的加热板上固定各试验片后，用推挽式测量仪(push pull gauge)按照0.1mm/秒的速度水平按压经模片固定的半导体元件，从而测量剪切胶粘力。测量是在加热板温度分别为80、175、250℃的情况下进行的。另外，作为测量装置，使用Model-2252(AIKOH工程(株)制)。而且，模片固定后不进行试样加热工序。另外，在半导体元件的情况下，在测量剪切胶粘力时，用推挽式测量仪按压2mm□的氧化铝蒸镀的半导体元件，从而测量剪切胶粘力。
这些结果示于下述表1中。
表1
Figure C20041010066500201
如表1中所示，实施例1和2中的胶粘片在任何加热板温度下，都显示出了0.2MPa以上的剪切胶粘力。另一方面，比较例1和2中的胶粘片的剪切胶粘力为0MPa。
[引线接合性]
使用实施例和比较例的胶粘片，评价使用半导体元件和引线框、基板、半导体元件时的引线接合性。
首先，对基板、引线框或者半导体元件制作各种试样。
即，在基板(UniMicron Technology Corporation制，商品名TFBGA16×16(2216-001A01))的情况下，使用了从隔板剥离得到的胶粘片后切割为6mm□的材料。另一方面，切割氧化铝蒸镀晶圆，制作长6mm×宽6mm×厚100μm的芯片。通过模片固定在基板上配置该芯片，制作试验片。模片固定是在120℃的温度施加负荷(0.25MPa)、加热1秒钟的条件下，使用芯片焊接机(株)新川制SPA-300)进行。
另外，在引线框(新光电气株式会社制，商品名CA-F313(MF202))的情况下，使用了从隔板剥离胶粘片后切割为7.5mm□的材料。另一方面，切割氧化铝蒸镀晶圆，制作长7.5mm×宽7.5mm×厚100μm的芯片。通过模片固定在基板上配置该芯片，制作试验片。模片固定是在与基板的情况相同的条件下进行的。
另外，在半导体元件的情况下，使用了从隔板剥离得到的胶粘片后切割为6mm□的材料。在引线框(新光电气株式会社制，商品名CA-F313(MF202))的冲模垫上，通过模片固定，配置将形成有评价用模块图案的评价用元件(フエニツクス·セミコンダクタ-(株)制，型号：NT-103，钝化层
Figure C20041010066500211
厚)切割为长6mm×宽6mm×厚500μm的元件。将该评价用元件作为第1半导体元件。然后，使用将上述胶粘片切割为5mm□的材料，通过模片固定，将从氧化铝蒸镀晶圆切出的长5mm×宽5mm×厚100μm的芯片配置在上述评价用元件上，制作试验片。把该芯片作为第2半导体元件。将各试样分别制作20个。
接着，对各种试样，用超声波热压接法接合引线接合用金线(直径25μm)。每一个试样的引线接合数为80个点。引线接合条件是超声波输出时间为10ms，超声波输出功率为120，接合负荷为980mN，载物台温度为80℃、175℃、250℃。另外，作为引线接合装置，使用UTC-300((株)新川制)。另外，进行引线接合成功率的评价时，用拉伸计测量的拉伸强度在5g以上的情况视为成功。而且，在模片固定后不进行试样加热工序。另外，在半导体元件的情况下，在第2半导体元件和引线框之间实施引线接合。
这些结果示于下述表2中。
表2
Figure C20041010066500212
如表2中所示，实施例1和2中的胶粘片在任何加热板温度下成功率都为100％。另一方面，比较例1和2中的胶粘片成功率是0。实施例1和2中的胶粘片的成功率为100％的原因是，各个都具有足够的剪切胶粘力，芯片不会发生移位。
在发明的详细说明中所举出的具体实施方式或者实施例，只用于清楚地说明本发明的技术内容，不应该进行狭义地解释，仅限于这些具体例子，而是可以在本发明的宗旨的范围内进行改变。

Claims (15)

1.一种半导体装置的制造方法，其特征在于，包括通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序、和不经过加热工序而直接进行引线接合的引线接合工序，且所述胶粘片相对于被粘附体的临时固着时的剪切胶粘力在0.2MPa以上。
2.如权利要求1所述的半导体装置的制造方法，其特征在于，所述被粘附体为基板、引线框或者半导体元件。
3.如权利要求1所述的半导体装置的制造方法，其特征在于，包括用密封树脂密封所述半导体元件的密封工序、和进行所述密封树脂的后固化的后固化工序，且在所述密封工序和/或后固化工序中，在通过加热使密封树脂固化的同时，通过介入所述胶粘片固着半导体元件和被粘附体。
4.如权利要求2所述的半导体装置的制造方法，其特征在于，当所述被粘附体为半导体元件时，包括在半导体元件和半导体元件之间通过介入所述胶粘片层叠隔板的工序，且所述胶粘片相对于隔板或者半导体元件的临时固着时的剪切胶粘力在0.2MPa以上。
5.如权利要求4所述的半导体装置的制造方法，其特征在于，在所述密封工序和/或后固化工序中，在通过加热使密封树脂固化的同时，通过介入所述胶粘片固着半导体元件和隔板。
6.如权利要求1-5中任何一项所述的半导体装置的制造方法，其特征在于，所述引线接合工序在80℃-250℃范围内进行。
7.如权利要求1所述的半导体装置的制造方法，其特征在于，作为所述胶粘片，使用含有热塑性树脂的材料。
8.如权利要求7所述的半导体装置的制造方法，其特征在于，作为所述热塑性树脂使用丙烯酸树脂。
9.如权利要求7所述的半导体装置的制造方法，其特征在于，作为所述胶粘片，使用添加有交联剂的材料。
10.如权利要求1所述的半导体装置的制造方法，其特征在于，作为所述胶粘片，使用同时含有热固化性树脂和热塑性树脂的材料。
11.如权利要求9所述的半导体装置的制造方法，其特征在于，作为所述热塑性树脂，使用丙烯酸树脂。
12.如权利要求9所述的半导体装置的制造方法，其特征在于，作为所述热固化性树脂，使用环氧树脂和/或酚醛树脂。
13.如权利要求10所述的半导体装置的制造方法，其特征在于，作为所述胶粘片，使用添加有交联剂的材料。
14.一种胶粘片，其特征在于，是在包括通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序、和不经过加热工序而直接进行引线接合的引线接合工序的半导体装置的制造方法中使用的胶粘片，且所述胶粘片相对于被粘附体的临时固着时的剪切胶粘力在0.2MPa以上。
15.一种半导体装置，其特征在于，是通过下述半导体装置的制造方法获得的装置，所述半导体装置的制造方法包括通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序、和不经过加热工序而直接进行引线接合的引线接合工序，并且作为所述胶粘片使用相对于被粘附体的临时固着时的剪切胶粘力在0.2MPa以上的材料。
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