JP4523611B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4523611B2 JP4523611B2 JP2007039667A JP2007039667A JP4523611B2 JP 4523611 B2 JP4523611 B2 JP 4523611B2 JP 2007039667 A JP2007039667 A JP 2007039667A JP 2007039667 A JP2007039667 A JP 2007039667A JP 4523611 B2 JP4523611 B2 JP 4523611B2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Description
本発明の実施の形態について、図1を参照しながら説明する。図1は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。但し、説明に不要な部分は省略し、また、説明を容易にする為に拡大又は縮小等して図示した部分がある。以上のことは、以下の図面に対しても同様である。
本実施の形態2に係る半導体装置の製造方法について、図2を参照しながら説明する。図2は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態3に係る半導体装置の製造方法について、図3を参照しながら説明する。図3は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態4に係る半導体装置の製造方法について、図4を参照しながら説明する。図4は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態5に係る半導体装置の製造方法について、図5を参照しながら説明する。図5は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
本実施の形態6に係る半導体装置の製造方法について、図6及び図7を参照しながら説明する。図6は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。図7は、本実施の形態に係る半導体装置の製造方法により得られた半導体装置の概略を示す断面図である。
本実施の形態7に係る半導体装置の製造方法について、図8を参照しながら説明する。図8は、本実施の形態に係る半導体装置の製造方法を説明する為の工程図である。
前記基板等上に半導体素子を3次元実装する場合、半導体素子の回路が形成される面側には、バッファーコート膜が形成されている。当該バッファーコート膜としては、例えば窒化珪素膜やポリイミド樹脂等の耐熱樹脂からなるものが挙げられる。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、フェノールノボラック型多官能エポキシ樹脂(ジャパンエポキシレジン(株)製、エピコート152)23部、フェノール樹脂(三井化学(株)製、ミレックスXLC−CC)6部をメチルエチルケトンに溶解させ、濃度20重量%の接着剤組成物溶液を調整した。
本実施例2に於いては実施例1にて使用したフェノールノボラック型多官能エポキシ樹脂に替えて、クレゾールノボラック型の多官能エポキシ樹脂(東都化成(株)製、YDCN−701)を用いた以外は、前記実施例1と同様にして、本実施例2に係る接着シート(厚さ25μm)を作製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン(株)製、エピコート1004)23部、フェノール樹脂(三井化学(株)製、ミレックスXLC−CC)6部をメチルエチルケトンに溶解させ、濃度20重量%の接着剤組成物溶液を調整した。
本比較例2に於いては、前記比較例1にて使用したビスフェノールA型エポキシ樹脂に替えて、ビスフェノールF型エポキシ樹脂(EPIKOTE806 ジャパンエポキシレジン(株)製)を用いた以外は、比較例1と同様にして、比較例2に係る接着シート(厚さ25μm)を作製した。
前記実施例及び比較例に於いて作製した接着シートについて、基板、リードフレーム又は半導体素子に対する半硬化後のせん断接着力を以下の通り測定した。
即ち、基板(UniMicron Technology Corporation製、商品名TFBGA16×16(2216−001A01))の場合に於いては、得られた接着シートをセパレーターから剥離した後、2mm□に切断したものを用いた。一方、アルミ蒸着ウェハをダイシングして、縦2mm×横2mm×厚さ500μmのチップを作製した。このチップを、基板にダイアタッチして試験片を作製した。ダイアタッチは、120℃の温度下で荷重(0.125MPa)をかけ、1秒間加熱するという条件下で、ダイボンダー((株)新川製SPA−300)を用いて行った。
実施例及び比較例の接着シートを用い、半導体素子とリードフレーム、基板、半導体素子を用いた場合のワイヤーボンディング性を評価した。
実施例及び比較例の接着シート中に含まれる樹脂成分中のエポキシ基の消失率をIRにより測定した。
12、31、41 接着シート
13 半導体素子
14、16 ボンディングワイヤー
15 封止樹脂
21 スペーサ
32 半導体素子
33 ダイシングテープ
41’、42’ コア材料(スペーサ)
Claims (14)
- 接着シートを介して、半導体素子を被着体上に仮固着する仮固着工程と、
前記接着シートを加熱温度80〜170℃、加熱時間0.5〜10時間の範囲内で加熱することにより、前記被着体に対するせん断接着力が0.5MPa以上の半硬化状態にする半硬化工程と、
前記接着シートが半硬化された状態で、半導体素子をワイヤーボンディングするワイヤーボンディング工程を有することを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記接着シートが熱硬化性樹脂としてのエポキシ樹脂を含み構成されており、
前記接着シートを加熱しなかったときのエポキシ基の消失率を0%とし、加熱温度175℃、加熱時間10時間で加熱したときのエポキシ基の消失率を100%とした場合に、半硬化状態に於けるエポキシ基の消失率が30%以下であることを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
前記エポキシ樹脂は、接着シートの全樹脂成分に対し10〜70重量%の範囲内で含有されていることを特徴とする半導体装置の製造方法。 - 請求項2又は3に記載の半導体装置の製造方法であって、
前記接着シートには架橋剤が含まれておらず、かつ、前記エポキシ樹脂は、フェノールノボラック型多官能エポキシ樹脂、又はクレゾールノボラック型多官能エポキシ樹脂であることを特徴とする半導体装置の製造方法。 - 請求項1〜4の何れか1項に記載の半導体装置の製造方法であって、
前記被着体は、基板、リードフレーム又は半導体素子であることを特徴とする半導体装置の製造方法。 - 請求項1〜5の何れか1項に記載の半導体装置の製造方法であって、
前記半導体素子を封止樹脂により封止する封止工程と、前記封止樹脂の後硬化を行う後硬化工程とを含み、
前記封止工程又は硬化工程の少なくとも何れか一方に於いて、加熱により封止樹脂を硬化させると共に、前記接着シートを介して半導体素子と被着体とを固着させることを特徴とする半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法であって、
前記被着体が半導体素子である場合に、半導体素子と半導体素子との間に、前記接着シートを介してスペーサを積層する工程を含み、
半硬化された前記接着シートの被着体に対するせん断接着力が0.5MPa以上であることを特徴とする半導体装置の製造方法。 - 請求項7に記載の半導体装置の製造方法であって、
前記封止工程又は後硬化工程の何れか一方に於いて、加熱により封止樹脂を硬化させると共に、前記接着シートを介して半導体素子とスペーサとを固着させることを特徴とする半導体装置の製造方法。 - 請求項1〜8の何れか1項に記載の半導体装置の製造方法であって、
前記ワイヤーボンディング工程は、80℃〜250℃の範囲内で行われることを特徴とする半導体装置の製造方法。 - 請求項1〜9に何れか1項に記載の半導体装置の製造方法であって、
前記接着シートとして、熱硬化性樹脂と熱可塑性樹脂の双方を含むものを使用することを特徴とする半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法であって、
前記熱可塑性樹脂として、アクリル樹脂を使用することを特徴とする半導体装置の製造方法。 - 請求項10又は11に記載の半導体装置の製造方法であって、
前記熱硬化性樹脂として、更にフェノール樹脂を使用することを特徴とする半導体装置の製造方法。 - 請求項10〜12の何れか1項に記載の半導体装置の製造方法であって、
前記接着シートとして、架橋剤が添加されているものを使用することを特徴とする半導体装置の製造方法。 - 請求項1〜13の何れか1項に記載の半導体装置の製造方法に於いて使用される接着シート。
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Citations (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593779A (ja) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | 磁気バブルチツプの実装方法 |
JPH03222441A (ja) * | 1990-01-29 | 1991-10-01 | Toshiba Corp | 半導体モジュールの製造方法 |
JPH0574829A (ja) * | 1991-09-11 | 1993-03-26 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH07102225A (ja) * | 1993-10-04 | 1995-04-18 | Fujitsu Ltd | 電子部品接合用接着剤 |
JPH08255803A (ja) * | 1995-03-16 | 1996-10-01 | Sony Corp | 半導体モジュール及びその製造方法 |
JPH10335534A (ja) * | 1997-03-31 | 1998-12-18 | Toray Ind Inc | ワイヤーボンディング接続用接着剤付きテープおよびそれを用いた銅張り積層板、半導体接続用基板ならびに半導体装置 |
JP2001081439A (ja) * | 1999-09-17 | 2001-03-27 | Fujitsu Ltd | 接着剤 |
JP2001313301A (ja) * | 2000-04-28 | 2001-11-09 | Nichia Chem Ind Ltd | ボンディング方法 |
JP2002105428A (ja) * | 2000-09-29 | 2002-04-10 | Nitto Denko Corp | ダイボンド用接着フィルム及びこれを用いた半導体装置 |
JP2002118144A (ja) * | 2000-10-06 | 2002-04-19 | Sony Chem Corp | 接着剤及び電気装置 |
JP2002158276A (ja) * | 2000-11-20 | 2002-05-31 | Hitachi Chem Co Ltd | ウエハ貼着用粘着シートおよび半導体装置 |
JP2002179769A (ja) * | 2000-12-12 | 2002-06-26 | Hitachi Chem Co Ltd | 樹脂ペースト組成物及びこれを用いた半導体装置 |
JP2002249753A (ja) * | 2001-02-23 | 2002-09-06 | Toray Ind Inc | 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シート、半導体接続用基板ならびに半導体装置 |
JP2002261233A (ja) * | 2001-03-05 | 2002-09-13 | Sony Corp | 半導体装置及びその製造方法 |
JP2002322457A (ja) * | 2001-04-26 | 2002-11-08 | Tomoegawa Paper Co Ltd | 半導体装置用接着剤組成物及び半導体装置用接着シート |
JP2003045902A (ja) * | 1996-10-08 | 2003-02-14 | Hitachi Chem Co Ltd | 半導体装置、半導体チップ搭載用基板、それらの製造法、接着剤、および、両面接着フィルム |
JP2003060127A (ja) * | 1996-10-08 | 2003-02-28 | Hitachi Chem Co Ltd | 半導体装置、半導体チップ搭載用基板、それらの製造法、接着剤、および、両面接着フィルム |
JP2003264205A (ja) * | 2002-03-08 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2003297861A (ja) * | 2002-03-29 | 2003-10-17 | Tomoegawa Paper Co Ltd | 半導体装置用接着テープ |
JP2005183703A (ja) * | 2003-12-19 | 2005-07-07 | Nitto Denko Corp | 半導体装置の製造方法 |
JP2006114586A (ja) * | 2004-10-13 | 2006-04-27 | Nitto Denko Corp | 半導体装置の製造方法、当該方法に用いる接着シート及び当該方法より得られる半導体装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007023852A1 (ja) * | 2005-08-24 | 2007-03-01 | Fujitsu Limited | 半導体装置及びその製造方法 |
-
2007
- 2007-02-20 JP JP2007039667A patent/JP4523611B2/ja active Active
Patent Citations (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593779A (ja) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | 磁気バブルチツプの実装方法 |
JPH03222441A (ja) * | 1990-01-29 | 1991-10-01 | Toshiba Corp | 半導体モジュールの製造方法 |
JPH0574829A (ja) * | 1991-09-11 | 1993-03-26 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH07102225A (ja) * | 1993-10-04 | 1995-04-18 | Fujitsu Ltd | 電子部品接合用接着剤 |
JPH08255803A (ja) * | 1995-03-16 | 1996-10-01 | Sony Corp | 半導体モジュール及びその製造方法 |
JP2003045902A (ja) * | 1996-10-08 | 2003-02-14 | Hitachi Chem Co Ltd | 半導体装置、半導体チップ搭載用基板、それらの製造法、接着剤、および、両面接着フィルム |
JP2003060127A (ja) * | 1996-10-08 | 2003-02-28 | Hitachi Chem Co Ltd | 半導体装置、半導体チップ搭載用基板、それらの製造法、接着剤、および、両面接着フィルム |
JPH10335534A (ja) * | 1997-03-31 | 1998-12-18 | Toray Ind Inc | ワイヤーボンディング接続用接着剤付きテープおよびそれを用いた銅張り積層板、半導体接続用基板ならびに半導体装置 |
JP2001081439A (ja) * | 1999-09-17 | 2001-03-27 | Fujitsu Ltd | 接着剤 |
JP2001313301A (ja) * | 2000-04-28 | 2001-11-09 | Nichia Chem Ind Ltd | ボンディング方法 |
JP2002105428A (ja) * | 2000-09-29 | 2002-04-10 | Nitto Denko Corp | ダイボンド用接着フィルム及びこれを用いた半導体装置 |
JP2002118144A (ja) * | 2000-10-06 | 2002-04-19 | Sony Chem Corp | 接着剤及び電気装置 |
JP2002158276A (ja) * | 2000-11-20 | 2002-05-31 | Hitachi Chem Co Ltd | ウエハ貼着用粘着シートおよび半導体装置 |
JP2002179769A (ja) * | 2000-12-12 | 2002-06-26 | Hitachi Chem Co Ltd | 樹脂ペースト組成物及びこれを用いた半導体装置 |
JP2002249753A (ja) * | 2001-02-23 | 2002-09-06 | Toray Ind Inc | 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シート、半導体接続用基板ならびに半導体装置 |
JP2002261233A (ja) * | 2001-03-05 | 2002-09-13 | Sony Corp | 半導体装置及びその製造方法 |
JP2002322457A (ja) * | 2001-04-26 | 2002-11-08 | Tomoegawa Paper Co Ltd | 半導体装置用接着剤組成物及び半導体装置用接着シート |
JP2003264205A (ja) * | 2002-03-08 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2003297861A (ja) * | 2002-03-29 | 2003-10-17 | Tomoegawa Paper Co Ltd | 半導体装置用接着テープ |
JP2005183703A (ja) * | 2003-12-19 | 2005-07-07 | Nitto Denko Corp | 半導体装置の製造方法 |
JP2006114586A (ja) * | 2004-10-13 | 2006-04-27 | Nitto Denko Corp | 半導体装置の製造方法、当該方法に用いる接着シート及び当該方法より得られる半導体装置 |
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