TWI387066B - 熱硬化型黏晶膜 - Google Patents
熱硬化型黏晶膜 Download PDFInfo
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- TWI387066B TWI387066B TW097106914A TW97106914A TWI387066B TW I387066 B TWI387066 B TW I387066B TW 097106914 A TW097106914 A TW 097106914A TW 97106914 A TW97106914 A TW 97106914A TW I387066 B TWI387066 B TW I387066B
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Classifications
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Description
本發明是關於一種熱硬化型黏晶膜以及具備此熱硬化型黏晶膜的切割黏晶膜,更詳細而言,本發明是關於一種將半導體晶片等黏固於基板或者導線架等被黏接體上時所使用的熱硬化型黏晶膜、以及具備此熱硬化型黏晶膜的切割黏晶膜。
先前,於半導體裝置的製造過程中向導線架或者電極部件固著半導體晶片時是使用銀漿料(paste)。上述固著處理以如下方式進行:將漿料狀黏接劑塗佈於導線架的晶片墊(die pad)等之上,於其上搭載半導體晶片,並使漿料狀黏接劑層硬化。
但是,漿料狀黏接劑由於其黏度行為或者劣化等而於塗佈量或者塗佈形狀等方面產生較大的不均。結果所形成的漿料狀黏接劑厚度變得不均勻,因此半導體晶片相關的的固著強度缺乏可靠性。即,若漿料狀黏接劑的塗佈量不足,則半導體晶片與電極部件之間的固著強度變低,於後續的打線接合(wire bonding)步驟中半導體晶片會剝離。另一方面,若漿料狀黏接劑的塗佈量過多,則漿料狀黏接劑流延至半導體晶片上而產生特性不良,良率或者可靠性下降。此種固著處理中的問題隨著半導體晶片的大型化而變得特別顯著。因此,必須頻繁控制漿料狀黏接劑的塗佈量,從而對操作性或者生產性造成障礙。
於此漿料狀黏接劑的塗佈步驟中,有利用其他途徑將漿料狀黏接劑塗佈於導線架或者形成晶片上的方法。但是,此方法中,漿料狀黏接劑層的均勻化困難,另外,塗佈漿料狀黏接劑必需特殊裝置或長時間。因此,揭示有一種切割黏晶膜,其於切割步驟中黏接保持半導體晶圓(wafer),並且賦予封裝(mount)步驟中所需的晶片固著用黏接劑層(例如,參照日本專利特開昭60-57342號公報)。
此切割黏晶膜是於支持基材上依次積層黏著劑層以及黏接劑層而構成者。即,於利用黏接劑層保持半導體晶圓的狀態下對半導體晶圓進行切割後,延伸支持基材而將晶片狀工件(work)與黏接劑層一同剝離,分別將其回收。進而,經由黏接劑層而使晶片狀工件固著於導線架等被黏接體上。
另一方面,用於固著半導體晶片的黏晶用黏接膜,例如可列舉熱硬化型黏晶用黏接膜。就針對以基板的配線或者半導體晶片上的線等為代表的由於表面凹凸而高低差較大的被黏接體,提昇其密著性之觀點而言,此熱硬化型黏晶膜使用熔融黏度小的黏接膜。
但是,若熔融黏度過小,則存在黏接劑從黏晶膜滲出而污染基板、半導體晶片等的問題。另一方面,若熔融黏度過大,則存在對被黏接體的密著性劣化、並產生孔隙(void)的問題。
本發明是鑒於上述問題而完成者,其目的在於提供一種與被黏接體的密著性優異,且不會因黏接劑的滲出而污染基板或者半導體晶片的熱硬化型黏晶膜;以及具備此熱硬化型黏晶膜的切割黏晶膜。
本案發明人等為解決上述先前的問題,對熱硬化型黏晶膜以及具備此熱硬化型黏晶膜的切割黏晶膜進行了研究。結果發現藉由採用下述構成,可實現上述目的,直至完成本發明。
即,本發明之熱硬化型黏晶膜是在製造半導體裝置時所使用的熱硬化型黏晶膜,其特徵在於:含有5 wt%(重量百分比)~15 wt%之熱可塑性樹脂成分以及45 wt%~55 wt%之熱硬化性樹脂成分作為主要成分,且熱硬化前於100℃下的熔融黏度大於等於400 Pa.s且小於等於2500 Pa.s。
根據上述構成,將熱可塑性樹脂成分的下限設為5 wt%,將熱硬化性樹脂成分的上限設為55 wt%,使上述黏晶膜在熱硬化前於100℃下的熔融黏度大於等於400 Pa.s,因此對基板等被黏接體的密著性良好。結果,可於與基板或者導線架等被黏接體的黏接面上,減少孔隙的產生。另一方面,將熱可塑性樹脂成分的上限為15 wt%,將熱硬化性樹脂成分的下限為45 wt%,使上述熔融黏度小於等於2500 Pa.s,因此可抑制黏接劑成分等自黏晶膜滲出。結果,可防止對基板或者固著於基板上的半導體晶片的污染。
較好的是上述黏晶膜在熱硬化後於250℃下的拉伸儲存彈性模數大於等於10 MPa。藉此,例如即便對固著於熱
硬化型黏晶膜上的半導體晶片進行打線接合時,亦可防止由於超聲波振動或者加熱而於黏晶膜與被黏接體的黏接面上產生滑動變形。結果可提高打線接合(wire bond)的成功率,並進一步提昇良率而製造半導體裝置。
較好的是在利用加熱所進行的熱硬化後於85℃、85%RH的環境下放置168小時的吸水率小於等於1重量%。藉由使吸水率小於等於1重量%,例如可防止在回焊步驟中於封裝(package)上產生裂痕(crack)。
較好的是在利用加熱所進行的熱硬化後於250℃下加熱1小時後的重量減少量小於等於1重量%。藉由使重量減少量小於等於1重量%,例如可防止在回焊步驟中於封裝上產生裂痕。
另外,本發明之切割黏晶膜,為解決上述課題,其特徵在於:於黏著膜上積層上述熱硬化型黏晶膜。
本發明利用上述說明的方法,而發揮如下所述的效果。
即,根據本發明之熱硬化型黏晶膜,藉由含有5 wt%~15 wt%之熱可塑性樹脂成分以及45 wt%~55 wt%之熱硬化性樹脂成分作為主要成分,且使熱硬化前於100℃下的熔融黏度大於等於400 Pa.s且小於等於2500 Pa.s,而提高對被黏接體的密著性,並防止孔隙之產生,並且抑制黏接劑成分滲出,而防止半導體晶片等的污染。結果,可高良率地製造可靠性較高的半導體裝置。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如
下。
以下,對本發明之熱硬化型黏晶膜(以下,稱為「黏晶膜」)進行說明。
上述黏晶膜含有5 wt%~15 wt%之熱可塑性樹脂成分以及45 wt%~55 wt%之熱硬化性樹脂成分作為主要成分。另外,上述黏晶膜的熔融黏度,在熱硬化前於100℃下為400 Pa.s~2500 Pa.s,更好的是500 Pa.s~2000 Pa.s。
將上述熱可塑性樹脂成分的下限設為5 wt%,將熱硬化性樹脂成分的上限設為55 wt%,藉此上述黏接膜在熱硬化前於100℃下的熔融黏度大於等於500 Pa.s。結果,可使黏晶膜對被黏接體的密著性良好。另一方面,將熱可塑性樹脂成分的上限設為15 wt%,將熱硬化性樹脂成分的下限設為45 wt%,藉此上述熔融黏度小於等於2000 Pa.s。結果,抑制黏接劑成分等自黏晶膜滲出,結果可防止對基板、半導體晶片等的污染。
另外,上述黏晶膜在熱硬化後於250℃下的拉伸儲存彈性模數較好的是大於等於10 MPa,更好的是15 MPa~100 MPa。拉伸儲存彈性模數的調整例如可藉由調整無機填充劑的添加量而進行。
上述黏晶膜在熱硬化後於85℃、85% RH之環境下放置168小時後的吸濕率較好的是小於等於1 wt%。藉由使
吸濕率小於等於1 wt%,例如,可防止於回焊步驟中在封裝體上產生裂痕。吸濕率之調整例如可藉由調整無機填充劑的添加量而進行。
在藉由加熱所進行的熱硬化後,於250℃加熱1小時後的重量減少量較好的是小於等於1 wt%。藉由使重量減少量小於等於1 wt%,例如,可防止於回焊步驟中在封裝體上產生裂痕。重量減少量之調整例如可藉由調整無機填充劑的添加量而進行。
本實施形態之黏晶膜,例如可列舉:僅由黏接劑層單層構成的黏接片、或者於核心材料之單面或者兩面形成有黏接劑層的多層結構的黏接片等。其中,上述核心材料可列舉:薄膜(例如聚醯亞胺薄膜、聚酯薄膜、聚對苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚碳酸酯薄膜等)、經玻璃纖維或者塑膠製不織纖維強化的樹脂基板、矽基板或者玻璃基板等。另外,亦可使用黏晶膜與切割膜一體化的薄膜。
上述熱可塑性樹脂,可列舉:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱可塑性聚醯亞胺樹脂、PET或者PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或者氟樹脂等。這些熱可塑性樹脂可單獨使用,或者併用兩種或者兩種以上。這些熱可塑性樹脂中,特別好的是離子性雜質較少、耐熱性高、且可確保半導體元件之可靠性的丙烯酸樹脂。
上述丙烯酸樹脂並無特別限定,可列舉:以具有碳數小於等於30、尤其是碳數為4~18之直鏈或者支鏈之烷基的丙烯酸或者甲基丙烯酸之酯的一種或者兩種或兩種以上作為成分的聚合物等。上述烷基例如可列舉:甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或者十二烷基等。
另外,形成上述聚合物的其他單體並無特別限定,例如可列舉:丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、順丁烯二酸、反丁烯二酸或者丁烯酸等各種含有羧基之單體,順丁烯二酸酐或者衣康酸酐等各種酸酐單體,(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥基十二烷酯或者丙烯酸(4-羥甲基環己基)甲酯等各種含有羥基之單體,苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或者(甲基)丙烯醯氧基萘磺酸等各種含有磺酸基之單體,或者2-羥乙基丙烯醯基磷酸酯等各種含有磷酸基之單體。
上述熱硬化性樹脂,可列舉:酚樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺酯樹脂、矽氧樹脂、或者熱硬化性聚醯亞胺樹脂等。這些樹脂可單獨使用,或者併
用兩種或者兩種以上。特別好的是較好含有使半導體元件腐蝕之離子性雜質等的環氧樹脂。另外,環氧樹脂的硬化劑較好的是酚樹脂。
上述環氧樹脂若是通常用作黏接劑組成物的環氧樹脂,則並無特別限定,例如可使用:雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥苯基甲烷型、四酚基乙烷型等雙官能環氧樹脂或多官能環氧樹脂,或者乙內醯脲型、三縮水甘油基異氰尿酸酯型或縮水甘油胺型等環氧樹脂。這些環氧樹脂可單獨使用,或者併用兩種或者兩種以上。這些環氧樹脂中,特別好的是酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥苯基甲烷型樹脂或者四酚基乙烷型環氧樹脂。其原因在於,這些環氧樹脂與作為硬化劑的酚樹脂的反應性強,且耐熱性等優異。
進而,上述酚樹脂作為上述環氧樹脂的硬化劑而發揮,例如可列舉:苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚樹脂,可溶酚醛樹脂(resole)型酚樹脂,聚對羥基苯乙烯等聚氧苯乙烯等。這些酚樹脂可單獨使用,亦可併用兩種或者兩種以上。這些酚樹脂中,特別好的是苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於,可提高半導體裝置的連接可靠性。
上述環氧樹脂與酚樹脂的調配比例,例如較好的是以
如下方式加以調配:相對於上述環氧樹脂成分中的每1當量環氧基,酚樹脂中之羥基為0.5當量~2.0當量。更好的是,0.8當量~1.2當量。即,其原因在於,若兩者的調配比例超出上述範圍,則未進行充分的硬化反應,環氧樹脂硬化物之特性易於劣化。
另外,於本發明中,特別好的是含有環氧樹脂、酚樹脂以及丙烯酸樹脂的黏晶膜。這些樹脂的離子性雜質少且耐熱性高,故而可確保半導體元件的可靠性。此情形時的調配比為,相對於丙烯酸樹脂成分100重量份,環氧樹脂與酚樹脂的混合量為10重量份~200重量份。
在預先使本發明之黏晶膜進行某種程度的交聯時,較好的是在製作時,添加與聚合物的分子鏈末端的官能基等反應的多官能性化合物作為交聯劑。藉此,可提昇高溫下的黏接特性,謀求改善耐熱性。
上述交聯劑可採用先前眾所周知的交聯劑。特別好的是:甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、多元醇與二異氰酸酯的加成物等聚異氰酸酯化合物。相對於上述聚合物100重量份,交聯劑的添加量通常較好的是設為0.05重量份~7重量份。若交聯劑的量多於7重量份,則黏接力下降,故欠佳。另一方面,若少於0.05重量份,則凝聚力不足,故欠佳。另外,可在含有此種聚異氰酸酯化合物的同時,視需要含有環氧樹脂等其他多官能性化合物。
另外,黏晶膜中可視其用途而適當調配無機填充劑
(filler)。藉由調配無機填充劑,可賦予導電性或者提高導熱性,且可調節彈性率等。上述無機填充劑例如可列舉:二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類,鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊錫等金屬或者合金類,以及包含碳等的各種無機粉末。這些填充劑可單獨使用,或者併用兩種或者兩種以上。其中可較好地使用二氧化矽,尤其是熔融二氧化矽。另外,無機填充劑的平均粒徑較好的是在0.1 μm~80 μm的範圍內。
相對於有機樹脂成分100重量份,上述無機填充劑的調配量較好的是設定為超過0重量份且小於等於80重量份。特別好的是超過0重量份且小於等於70重量份。另外,熱硬化後於250℃下的拉伸儲存彈性模數大於等於10 MPa之情形時,相對於有機樹脂成分100重量份,無機填充劑的調配量較好的是設為大於等於10重量份,於拉伸儲存彈性模數小於等於100 MPa之情形時,相對於有機樹脂成分100重量份,無機填充劑的調配量較好的是設為小於等於100重量份。另外,於重量減少量小於等於1 wt%之情形時,無機填充劑的調配量較好的是相對於有機樹脂成分100重量份,超過0重量份。
另外,黏晶膜中,除上述無機填充劑以外,可視需要而適當調配其他添加劑。其他添加劑例如可列舉:阻燃劑、矽烷偶合劑(silane coupling agent)或者離子捕捉劑(ion trapping agent)等。
上述阻燃劑例如可列舉:三氧化銻、五氧化銻、溴化環氧樹脂等。這些阻燃劑可單獨使用,或者併用兩種或者兩種以上。
上述矽烷偶合劑例如可列舉:β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。這些化合物可單獨使用,或者併用兩種或者兩種以上。
上述離子捕捉劑例如可列舉:水滑石(hydrotalcite)類、氫氧化鉍等。這些離子捕捉劑可單獨使用,或者併用兩種或者兩種以上。
黏晶膜的厚度(積層體之情形時為總厚度)並無特別限定,例如為5 μm~100 μm左右,較好的是5 μm~50 μm左右。
下面,對使用本實施形態之黏晶膜的半導體裝置的製造方法加以說明。圖1是表示經由黏晶膜而封裝半導體元件之例的剖面示意圖。
本實施形態之半導體裝置的製造方法具有以下步驟:以黏晶膜3a將半導體晶片(半導體元件)5固著於被黏接體(基板或者導線架,以下僅稱為被黏接體)6上的固著步驟;不經過加熱步驟而進行打線接合的打線接合步驟。進而具有:以密封樹脂8密封半導體晶片5的密封步驟;對此密封樹脂8進行後硬化的後硬化步驟。
上述固著步驟如圖1所示,是經由黏晶膜3a將半導體
晶片5固著於被黏接體6上的步驟。於此步驟中,藉由加熱黏晶膜3而使之熱硬化,將半導體晶片5黏接固定於被黏接體6上,提高耐熱強度。加熱條件較好的是:溫度為80℃~180℃的範圍內,且加熱時間為0.1~24小時,較好的是0.1~4小時,更好的是0.1~1小時的範圍內。另外,將半導體晶片5固著於被黏接體6上的方法,例如可列舉以下方法:於被黏接體6上積層黏晶膜3a後,於黏晶膜3a上,以打線接合面成為上側之方式依次積層半導體晶片5而使半導體晶片5固著。另外,亦可將預先固著有黏晶膜3a的半導體晶片5固著並積層於被黏接體6上。
另外,於本發明中,可不使黏晶膜3a熱硬化,而僅暫時固著於被黏接體6上。其後,亦可不經過加熱步驟而進行打線接合,進而以密封樹脂將半導體晶片密封,並使此密封樹脂後硬化。將半導體晶片5暫時固著於被黏接體6上的方法,例如可列舉如下方法:於被黏接體6上積層黏晶膜3a後,於黏晶膜3a上,以打線接合面成為上側之方式依次積層半導體晶片5而使半導體晶片5暫時固著。另外,亦可將預先暫時固著有黏晶膜3a的半導體晶片5暫時固著並積層於被黏接體6上。
上述基板可使用先前眾所周知的基板。另外,上述導線架可使用:銅導線架、42合金導線架等金屬導線架或者包含玻璃環氧樹脂、BT(雙馬來醯亞胺-三嗪)、聚醯亞胺等的有機基板。然而,本發明並非限定於上述基板,亦包括可封裝半導體元件、與半導體元件電性連接而使用的電
路基板。
上述黏晶膜3a使用暫時固著時的剪切黏接力對於被黏接體6為大於等於0.2 MPa的黏晶膜,更好的是使用0.2 MPa~10 MPa之範圍內的黏晶膜。黏晶膜3a的剪切黏接力至少大於等於0.2 MPa,因此即使不經過加熱步驟而進行打線接合步驟,亦不會因為此步驟中之超音波振動或加熱,而於黏晶膜3a與半導體晶片5或者被黏接體6的黏接面產生滑動變形。即,半導體元件不會因打線接合時的超音波振動而移動,藉此,可防止打線接合的成功率下降。
上述打線接合步驟是將被黏接體6的端子部(內部引線)的前端與半導體晶片5上的電極墊(未圖示)以接合線7電性連接的步驟。上述接合線7例如可使用金線、鋁線或者銅線等。進行打線接合時的溫度為80℃~250℃,較好的是於80℃~220℃的範圍內進行。另外,打線接合的加熱時間為數秒鐘~數分鐘。結線是在加熱至上述溫度範圍內之狀態下,藉由併用超音波所產生的振動能量與施壓所產生的壓接能量而進行。於上述暫時固著之情形時,不經過加熱步驟而實施本步驟。
可不藉由黏晶膜3a進行固著而實行本步驟。於此情形時,於本步驟之過程中,並不藉由黏晶膜3a將半導體晶片5與被黏接體6固著。此處,黏晶膜3a的剪切黏接力即使於80℃~250℃的溫度範圍內,亦必須大於等於0.2 MPa。其原因在於:若於此溫度範圍內剪切黏接力小於0.2 MPa,則半導體元件會因打線接合時的超音波振動而移動,從而
無法進行打線接合,導致良率下降。
上述密封步驟是藉由密封樹脂8而密封半導體晶片5的步驟。實施本步驟的目的是為了保護搭載於被黏接體6上的半導體晶片5或者接合線7。本步驟是使用模具使密封用樹脂成型而進行。密封樹脂8例如使用環氧系樹脂。樹脂密封時的加熱溫度,通常於175℃下進行60秒~90秒,但本發明並不限定於此,例如可於165℃~185℃下,進行數分鐘的硬化。藉此使密封樹脂硬化,並且於上述暫時固著之情形時,可同時經由黏晶膜3a固著半導體晶片5與被黏接體6。即,於本發明中,即使於不進行後述之後硬化步驟之情形時,亦可於本步驟中藉由黏晶膜3a進行固著,可有助於製造步驟數的減少以及半導體裝置的製造時間的縮短。
於上述後硬化步驟中,使上述密封步驟中硬化不足的密封樹脂8完全硬化。即使於密封步驟中不藉由黏晶膜3a而固著時,亦可於本步驟中與密封樹脂8的硬化一同進行藉由黏晶膜3a的固著。本步驟中的加熱溫度根據密封樹脂的種類而有所不同,例如為165℃~185℃的範圍內,加熱時間為0.5小時~8小時左右。
另外,本發明之切割黏晶膜如圖2所示,亦可較好地用於積層多個半導體晶片而進行立體封裝之情形。圖2是表示經由黏晶膜而立體封裝半導體晶片之例的剖面示意圖。於圖2所示之立體封裝之情形時,首先將以與半導體晶片相同之尺寸切出的至少一片黏晶膜3a固著於被黏接
體6上,然後經由黏晶膜3a,以半導體晶片5之打線接合面成為上側之方式固著半導體晶片5。接著,將避開半導體晶片5的電極墊部分而固著黏晶膜13。其後,以其他半導體晶片15之打線接合面成為上側之方式,將其他半導體晶片15固著於黏晶膜13上。於此步驟中,藉由加熱黏晶膜3a、13而使之熱硬化,從而將半導體晶片黏接固定,提高耐熱強度。加熱條件與上述相同,較好的是溫度為80℃~200℃的範圍內,且加熱時間於0.1小時~24小時的範圍內。
另外,於本發明中,亦可並不使黏晶膜3a、13熱硬化,而僅是暫時固著。其後,亦可不經過加熱步驟而進行打線接合,接著以密封樹脂將半導體晶片密封,使此密封樹脂進行後硬化。
接著,進行打線接合步驟。藉此,以接合線7將半導體晶片5以及其他半導體晶片15之各自的電極墊與被黏接體6電性連接。另外,於上述暫時固著之情形時,不經過加熱步驟而實施本步驟。
然後,進行藉由密封樹脂8密封半導體晶片5等的密封步驟,使密封樹脂硬化。與此同時,於上述暫時固著之情形時,藉由黏晶膜3a而使被黏接體6與半導體晶片5之間固著。另外,亦藉由黏晶膜13而使半導體晶片5與其他半導體晶片15之間固著。另外,密封步驟後可進行後硬化步驟。
即使於半導體晶片之立體封裝之情形時,亦無需藉由
黏晶膜3a、13之加熱進行加熱處理,故而可謀求製造步驟的簡化以及良率的提昇。另外,被黏接體6不會產生翹曲,且半導體晶片5以及其他半導體晶片15不會產生裂痕,故而可實現半導體元件之進一步薄型化。
另外,如圖3所示,亦可為經由黏晶膜而於半導體晶片間積層間隔物的立體封裝。圖3是表示經由間隔物並藉由黏晶膜而立體封裝兩個半導體晶片之例的剖面示意圖。
於圖3所示之立體封裝之情形時,首先於被黏接體6上依次積層並固著黏晶膜3a、半導體晶片5以及黏晶膜21。然後,於黏晶膜21上依次積層並固著間隔物9、黏晶膜21、黏晶膜3a以及半導體晶片5。於此步驟中,藉由加熱黏晶膜3a、21而使之熱硬化並黏接固定,提高耐熱強度。加熱條件與上述相同,較好的是溫度為80℃~200℃的範圍內,且加熱時間為0.1小時~24小時的範圍內。
另外,於本發明中,亦可並不使黏晶膜3a、21熱硬化,而僅是暫時固著。其後,亦可不經過加熱步驟而進行打線接合,接著以密封樹脂將半導體晶片密封,使此密封樹脂進行後硬化。
接著,如圖3所示,進行打線接合步驟。藉此,將半導體晶片5的電極墊與被黏接體6以接合線7電性連接。另外,於上述暫時固著之情形時,不經過加熱步驟而實施本步驟。
然後,進行藉由密封樹脂8密封半導體晶片5的密封步驟,使密封樹脂8硬化,與此同時,於上述暫時固著之
情形時,藉由黏晶膜3a、21而使被黏接體6與半導體晶片5之間、以及半導體晶片5與間隔物9之間固著。藉此,獲得半導體封裝。密封步驟較好的是僅對半導體晶片5側進行單面密封的一併密封法。進行密封之目的是為了保護貼合在黏著片上的半導體晶片5,代表性的密封方法是使用密封樹脂8並使之於模具中成型。此時,通常使用多個具有模穴(cavity)的上模具與下模具構成的模具,同時進行密封步驟。樹脂密封時的加熱溫度較好的是例如170℃~180℃的範圍內。密封步驟後,亦可進行後硬化步驟。
另外,上述間隔物9並無特別限定,例如可使用先前眾所周知的矽晶片、聚醯亞胺薄膜等。並且,可使用核心材料作為上述間隔物。核心材料並無特別限定,可使用先前眾所周知的核心材料。具體而言,可使用薄膜(例如聚醯亞胺薄膜、聚酯薄膜、聚對苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚碳酸酯薄膜等)、經玻璃纖維或者塑膠製不織纖維強化的樹脂基板、鏡面矽晶圓、矽基板或者玻璃基板等。
進一步,如圖4所示,亦可為不使用上述間隔物9,而經由埋入有接合線之一部分的黏晶膜而積層有多個半導體晶片5的立體封裝(FoW(Film on Wire))。圖4是表示藉由黏晶膜22而立體封裝兩個半導體晶片5之例的剖面示意圖。
於圖4所示之立體封裝之情形時,首先於被黏接體6上依次積層並暫時固著黏晶膜3a以及半導體晶片5。接
著,不進行加熱步驟,如圖4所示,進行打線接合步驟。藉此,將半導體晶片5之電極墊與被黏接體6以接合線7電性連接。
然後,於上述半導體晶片5上積層預先積層並暫時固著的半導體晶片5與黏晶膜3a。此時,形成接合線7的一部分埋入黏晶膜22中的結構。進而進行熱硬化步驟後,進行打線接合步驟。
之後,進行藉由密封樹脂8密封半導體晶片5的密封步驟,使密封樹脂8硬化,與此同時藉由黏晶膜3a、22使被黏接體6與半導體晶片5之間、以及半導體晶片5彼此間固著。藉此,獲得半導體封裝。密封步驟的條件與上述相同,於此形態之情形時,亦可於密封步驟後進行後硬化步驟。
接著,於印刷線路板上將上述半導體封裝體進行表面黏著。表面黏著的方法例如可列舉回焊,即,預先於印刷線路板上供給焊料後,藉由溫風等加熱熔融而進行焊接。加熱方法可列舉:熱風回焊、紅外線回焊等。並且,可為整體加熱、局部加熱之任一種方式。較好的是加熱溫度為240℃~265℃,加熱時間為1秒~20秒的範圍內。
於上述基板等上立體封裝半導體元件之情形時,於半導體元件之形成有電路之面側,形成緩衝塗佈膜。此緩衝塗佈膜例如可列舉:氮化矽薄膜或者包含聚醯亞胺樹脂等耐熱樹脂的薄膜。
另外,於進行半導體元件之立體封裝時,各階段所使用的黏晶膜並非限定於包含相同組成之薄膜,可根據製造條件或者用途等而進行適當變更。
並且,於上述實施形態中,對如下態樣加以闡述,即,於基板等上積層多個半導體元件後,一併進行打線接合步驟,但本發明並非限定於此形態。例如,亦可於每次將半導體元件積層於基板等上時,進行打線接合步驟。
以下,舉例詳細說明本發明之較佳實施例。其中,此實施例中所揭示之材料或者調配量等,只要無限定性的揭示,則本發明的範圍並非限定於此,僅為說明例。另外,“份”是表示“重量份”。
相對於100重量份以丙烯酸乙酯-甲基丙烯酸甲酯為主要成分的丙烯酸酯系聚合物(根上工業股份有限公司製造,PARACRON W-197CM),而使228重量份環氧樹脂1(JER股份有限公司製造,Epikote 1004)、206重量份環氧樹脂2(JER股份有限公司製造,Epikote 827)、466重量份酚樹脂(三井化學股份有限公司製造,Milex XLC-4L)、667重量份平均粒徑0.5 μm的球狀二氧化矽(ADMATECHS股份有限公司製造,SO-25R)、3份硬化觸媒(四國化成股份有限公司製造,C11-Z)溶解於甲基乙基酮中,製備濃度為23.6 wt%的黏接劑組成物。
將此黏接劑組成物溶液塗佈於由經有機矽脫模處理之厚度為50 μm之聚對苯二甲酸乙二酯薄膜所構成的脫模
處理薄膜(剝離襯墊)上,然後於130℃下乾燥2分鐘。藉此,製作厚度為40 μm的黏晶膜A。
相對於100份以丙烯酸乙酯-甲基丙烯酸甲酯為主要成分的丙烯酸酯系聚合物(根上工業股份有限公司製造,PARACRON W-197CM),而使144份環氧樹脂1(JER股份有限公司製造,Epikote 1004)、130份環氧樹脂2(JER股份有限公司製造,Epikote 827)、293份酚樹脂(三井化學股份有限公司製造,Milex XLC-4L)、444份球狀二氧化矽(ADMATECHS股份有限公司製造,SO-25R)、2份硬化觸媒(四國化成股份有限公司製造,C11-Z)溶解於甲基乙基酮中,製備濃度為23.6 wt%的黏接劑組成物。
將此黏接劑組成物之溶液塗佈於作為剝離襯墊的由經有機矽脫模處理之厚度為50 μm之聚對苯二甲酸乙二酯薄膜所構成的脫模處理薄膜上,然後於130℃下乾燥2分鐘,藉此獲得厚度為40 μm的黏晶膜B。
相對於100份以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分的丙烯酸酯系聚合物(根上工業股份有限公司製造,PARACRON W-197CM),而使101份環氧樹脂1(JER股份有限公司製造,Epikote 1004)、92份環氧樹脂2(JER股份有限公司製造,Epikote 827)、206份酚樹脂(三井化學股份有限公司製造,Milex XLC-4L)、333份球狀二氧化矽(ADMATECHS股份有限公司製造,SO-25R)、1.5份
硬化觸媒(四國化成股份有限公司製造,C11-Z)溶解於甲基乙基酮中,製備濃度為23.6 wt%的黏接劑組成物。
將此黏接劑組成物之溶液塗佈於作為剝離襯墊的由經有機矽脫模處理之厚度為50 μm之聚對苯二甲酸乙二酯薄膜所構成的脫模處理薄膜上,然後於130℃下乾燥2分鐘,藉此獲得厚度為40 μm的黏晶膜C。
相對於100份以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分的丙烯酸酯系聚合物(根上工業股份有限公司製造,PARACRON W-197CM),而使76份環氧樹脂1(JER股份有限公司製造,Epikote 1004)、69份環氧樹脂2(JER股份有限公司製造,Epikote 827)、155份酚樹脂(三井化學股份有限公司製造,Milex XLC-4L)、267份球狀二氧化矽(ADMATECHS股份有限公司製造,SO-25R)、1.2份硬化觸媒(四國化成股份有限公司製造,C11-Z)溶解於甲基乙基酮中,製備濃度為23.6 wt%的黏接劑組成物。
將此黏接劑組成物之溶液塗佈於作為剝離襯墊的由經有機矽脫模處理之厚度為50 μm之聚對苯二甲酸乙二酯薄膜所構成的脫模處理薄膜上,然後於130℃下乾燥2分鐘,藉此獲得厚度為40 μm的黏晶膜D。
相對於100份以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分的丙烯酸酯系聚合物(根上工業股份有限公司製造,PARACRON W-197CM),而使482份環氧樹脂1(JER
股份有限公司製造,Epikote 1004)、436份環氧樹脂2(JER股份有限公司製造,Epikote 827)、983份酚樹脂(三井化學股份有限公司製造,Milex XLC-4L)、1333份球狀二氧化矽(ADMATECHS股份有限公司製造,SO-25R)、6份硬化觸媒(四國化成股份有限公司製造,C11-Z)溶解於甲基乙基酮中,製備濃度為23.6 wt%的黏接劑組成物。
將此黏接劑組成物之溶液塗佈於作為剝離襯墊的由經有機矽脫模處理之厚度為50 μm之聚對苯二甲酸乙二酯薄膜所構成的脫模處理薄膜上,然後於130℃下乾燥2分鐘,藉此獲得厚度為40 μm的黏晶膜E。
相對於100份以丙烯酸乙酯-甲基丙烯酸甲酯作為主要成分的丙烯酸酯系聚合物(根上工業股份有限公司製造,PARACRON W-197CM),而使59份環氧樹脂1(JER股份有限公司製造,Epikote 1004)、53份環氧樹脂2(JER股份有限公司製造,Epikote 827)、121份酚樹脂(三井化學股份有限公司製造,Milex XLC-4L)、222份球狀二氧化矽(ADMATECHS股份有限公司製造,SO-25R)、1份硬化觸媒(四國化成股份有限公司製造,C11-Z)溶解於甲基乙基酮中,製備濃度為23.6 wt%的黏接劑組成物。
將此黏接劑組成物之溶液塗佈於作為剝離襯墊的由經有機矽脫模處理之厚度為50 μm之聚對苯二甲酸乙二酯薄膜所構成的脫模處理薄膜上,然後於130℃下乾燥2分鐘,藉此獲得厚度為40 μm的黏晶膜F。
對各實施例以及比較例之黏晶膜A~F在熱硬化前於100℃下的熔融黏度進行測定。測定使用流變儀(rheometer)(HAAKE公司製造,RS-1),藉由平行板法(parallel plate method)進行。即,自黏晶膜A~F各採取0.1 g作為樣品,將此樣品裝入預熱至100℃的板(plate)中。熔融黏度為測定開始300秒後之值。另外,板間之間隙為0.1 mm。結果示於下述表1以及表2。
將各實施例以及比較例之黏晶膜A~F分別於40℃下貼合於半導體元件上,以160℃、0.2 MPa、2 s封裝於BGA基板上。然後,於175℃下加熱1小時,使各黏晶膜A~F熱硬化。
接著,以密封樹脂(日東電工股份有限公司製造,GE-100)進行封裝,製造半導體裝置(TFBGA封裝,16 mm×16 mm×0.7 mm,晶片尺寸5 mm×5 mm)。將密封後的半導體裝置以玻璃切割機切斷,以顯微鏡觀察其剖面,測定各黏晶膜A~F與BGA基板之貼合面的孔隙面積。結果示於下述表1以及表2。
將各實施例以及比較例之黏晶膜A~F於40℃下貼合於半導體元件上,以160℃、0.2 MPa、2 s封裝於BGA基板上。使用光學顯微鏡測定此時黏接劑的滲出量。結果示於下述表1以及表2。
根據於85℃、85% RH之恆溫恆濕槽中放置168小時前後的重量減少率,對所得黏晶膜A~F測定熱硬化後的吸水率。
根據使用乾燥機於210℃下放置1小時前後的重量減少量,對所得黏晶膜A~F測定熱硬化後的重量減少量。
使用黏彈性測定裝置(Rheometic Scientific公司製造,Solid Analyzer RS Ⅱ),於升溫速度10℃/分鐘、頻率1 MHz之條件下,對所得黏晶膜A~F測定熱硬化後的拉伸儲存彈性模數。
根據下述表1以及表2可確認,如比較例1之黏晶膜E,若熔融黏度為300 Pa.s,則黏接劑的滲出量為較多之165 μm。並且,如比較例2之黏晶膜F,若熔融黏度為3500 Pa.s,則封裝後的孔隙面積為較大之8.9 vol%。
另一方面,如實施例1~4之黏晶膜A~D,若熔融黏度分別為500、800、1400、2000 Pa.s,則無黏接劑之滲出,且封裝後的孔隙面積亦極小。由此可知,本實施例之黏晶膜A~D,於黏晶步驟中,與半導體元件的密著性優異,且不會因黏接劑的滲出而污染基板或者半導體晶片。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
3a、13、21、22‧‧‧黏晶膜
5、15‧‧‧半導體晶片
6‧‧‧被黏接體
7‧‧‧接合線
8‧‧‧密封樹脂
9‧‧‧間隔物
圖1是表示經由本發明之一實施形態之黏晶膜而封裝半導體晶片之例的剖面示意圖。
圖2是表示經由上述黏晶膜而立體封裝半導體晶片之例的剖面示意圖。
圖3是表示使用上述黏晶膜,經由間隔物而立體封裝兩個半導體晶片之例的剖面示意圖。
圖4是表示不使用上述間隔物,藉由黏晶膜而立體封
裝兩個半導體晶片之例的剖面示意圖。
3a‧‧‧黏晶膜
5‧‧‧半導體晶片
6‧‧‧被黏接體
7‧‧‧接合線
8‧‧‧密封樹脂
Claims (8)
- 一種熱硬化型黏晶膜,其是在製造半導體裝置時所使用的熱硬化型黏晶膜,其特徵在於:含有5 wt%~15 wt%之熱可塑性樹脂成分以及45 wt%~55 wt%之熱硬化性樹脂成分作為主要成分,且熱硬化前於100℃下的熔融黏度大於等於400 Pa.s且小於等於2500 Pa.s,在利用加熱所進行的熱硬化後,於85℃、85% RH之環境下經168小時放置時的吸濕率小於等於1 wt%。
- 如申請專利範圍第1項所述之熱硬化型黏晶膜,其特徵在於:上述熱硬化型黏晶膜於熱硬化後於250℃下的拉伸儲存彈性模數大於等於10 MPa。
- 如申請專利範圍第1項所述之熱硬化型黏晶膜,其特徵在於:在利用加熱所進行的熱硬化後,於250℃、加熱1小時後的重量減少量小於等於1 wt%。
- 如申請專利範圍第1項所述之熱硬化型黏晶膜,其特徵在於:含有無機填充劑,相對於有機樹脂成分100重量份,上述無機填充劑超過0重量份且小於等於80重量份。
- 如申請專利範圍第1項所述之熱硬化型黏晶膜,其特徵在於:上述熱可塑性樹脂成分為丙烯酸樹脂成分,上述熱硬化性樹脂成分為環氧樹脂成分以及酚樹脂成分。
- 如申請專利範圍第5項所述之熱硬化型黏晶膜,其特徵在於:上述環氧樹脂成分與上述酚樹脂成分的調配比例為,相對於上述環氧樹脂成分中的每1當量環氧基,上 述酚樹脂中之羥基為0.5當量~2.0當量。
- 如申請專利範圍第6項所述之熱硬化型黏晶膜,其特徵在於:相對於上述丙烯酸樹脂成分100重量份,上述環氧樹脂成分與上述酚樹脂成分的混合量為10重量份~200重量份。
- 一種切割黏晶膜,其特徵在於:如申請專利範圍第1項所述之熱硬化型黏晶膜積層於黏著膜上。
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