TW201517181A - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TW201517181A
TW201517181A TW103133087A TW103133087A TW201517181A TW 201517181 A TW201517181 A TW 201517181A TW 103133087 A TW103133087 A TW 103133087A TW 103133087 A TW103133087 A TW 103133087A TW 201517181 A TW201517181 A TW 201517181A
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Taiwan
Prior art keywords
sheet
resin composition
resin
viscosity
heating
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TW103133087A
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English (en)
Inventor
Akihiro Fukui
Naohide Takamoto
Hiroyuki Hanazono
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Nitto Denko Corp
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Publication of TW201517181A publication Critical patent/TW201517181A/zh

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    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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Abstract

一種半導體裝置之製造方法，其特徵在於包括如下步驟：準備於半導體晶片之凸塊形成面貼附有片狀樹脂組合物之附片狀樹脂組合物的晶片之步驟A；準備形成有電極之安裝用基板之步驟B；以片狀樹脂組合物作為貼合面而將附片狀樹脂組合物之晶片貼附於安裝用基板上，並使形成於半導體晶片上之凸塊與形成於安裝用基板上之電極相對向之步驟C；於步驟C後，加熱片狀樹脂組合物而使之半硬化之步驟D；於步驟D後，於高於步驟D中之加熱之溫度下進行加熱而使凸塊與電極接合並且使片狀組合物硬化之步驟E。

Description

半導體裝置之製造方法
本發明係關於一種半導體裝置之製造方法。
由電子機器之小型、薄型化所產生之對高密度安裝之要求近年來急遽增加。因此，關於半導體封裝，適合於高密度安裝之表面安裝型代替先前之插件型而成為主流。該表面安裝型係將引線直接焊接於印刷基板等上。作為加熱方法，係藉由紅外線回焊、汽相回焊或浸焊等加熱封裝整體而進行安裝。
於表面安裝後，為了確保半導體元件表面之保護或半導體元件與基板之間的連接可靠性，而於半導體元件與基板之間的空間內填充密封樹脂。密封樹脂向半導體元件與基板之間的空間內之填充亦稱為底部填充。作為底部填充用密封樹脂，廣泛使用液狀密封樹脂，但就液狀密封樹脂而言，注入位置或注入量之調節較為困難。因此，提出有使用片狀樹脂組合物而填充半導體元件與基板之間的空間之技術(例如參照專利文獻1)。
於專利文獻1中，揭示有使晶圓附著於片狀樹脂組合物上，繼而對附著於片狀樹脂組合物上之狀態下之晶圓進行切晶而形成晶片，其後將片狀樹脂組合物之面安裝於基板上，獲得基板與晶片之電性連接，並且使片狀樹脂組合物熱硬化而密封晶片與基板之界面。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利第4438973號
基板與晶片之電性連接係使用焊錫。本發明者等人對使用上述片狀樹脂組合物之半導體裝置之製造方法進行了努力研究。結果發現：於上述先前之半導體裝置之製造方法中，可藉由一次加熱而同時進行基板與晶片之電性連接及片狀樹脂組合物之硬化，因此使因加熱而熔融之未硬化狀態下之片狀樹脂組合物流動，使熔融之焊錫與該片狀樹脂組合物一起流動，其後，於使焊錫流動之狀態下片狀樹脂組合物硬化。並且，發現存在如下問題：有流動之焊錫彼此黏連而引起短路或者因接合部之焊錫不足而不接合之情形。
本發明係鑒於上述問題而成者，其目的在於提供一種可抑制使半導體晶片與安裝用基板電性連接之焊錫因密封半導體晶片與安裝用基板之空隙的片狀樹脂組合物而流動的半導體裝置之製造方法。
本案發明者等人發現可藉由採用下述構成而解決上述問題，從而達成本發明。
即，本發明係一種半導體裝置之製造方法，其特徵在於包括如下步驟：準備於半導體晶片之凸塊形成面貼附有片狀樹脂組合物之附片狀樹脂組合物之晶片的步驟A；準備形成有電極之安裝用基板之步驟B；以上述片狀樹脂組合物作為貼合面而將上述附片狀樹脂組合物之晶片貼附於上述安裝用基板上，並使形成於上述半導體晶片上之上述凸塊與形成於上述安裝用基板上之電極相對向的步驟C；於上述步驟C後，加熱上述片狀樹脂組合物而使之半硬化的步驟 D；以及於上述步驟D後，於高於上述步驟D中之加熱之溫度下進行加熱，將上述凸塊與上述電極接合，並且使上述片狀組合物硬化的步驟E。
根據本發明之半導體裝置之製造方法，於使形成於半導體晶片上之凸塊與形成於安裝用基板上之電極相對向之狀態下加熱片狀樹脂組合物而使之半硬化(步驟D)。因此，片狀樹脂組合物成為難以因其後之加熱而流動之狀態。其後，於高於上述步驟D中之加熱之溫度下進行加熱，將上述凸塊與上述電極接合，並且使上述片狀組合物硬化(步驟E)。於上述步驟E之階段，由於片狀樹脂組合物已半硬化，故而構成片狀樹脂組合物之樹脂難以流動。因此，即便為了上述凸塊與上述電極之接合而使焊錫熔融，亦抑制焊錫隨著片狀樹脂組合物之流動而流動之情況。其結果為，可抑制由焊錫流動所引起之短路或接觸不良之發生。
於上述構成中，較佳為上述片狀樹脂組合物於未達200℃之溫度下之最低熔融黏度為10Pa．s~5000Pa．s之範圍內，於200℃下加熱10秒鐘後之熱硬化率為6%以上，於200℃下加熱10秒鐘後之狀態下之200℃下之黏度、即由基於安德方程式所獲得之黏度曲線而獲得之值為100Pa．s~10000Pa．s之範圍內。
若上述片狀樹脂組合物於未達200℃之溫度下之最低熔融黏度為10Pa．s~5000Pa．s之範圍內，則於上述步驟C中，可一面將上述凸塊與上述電極容易地埋入至上述片狀樹脂組合物中，一面使之相對向。
又，若上述片狀樹脂組合物於200℃下加熱10秒鐘後之熱硬化率為6%以上，上述片狀樹脂組合物於200℃下加熱10秒鐘後之狀態下之200℃下之黏度、即由基於安德方程式所獲得之黏度曲線而獲得之值 為200Pa．s~2000Pa．s之範圍內，則於上述步驟D後，片狀樹脂組合物半硬化，黏度較半硬化前上升。其後，於高於上述步驟D中之加熱之溫度下進行加熱而使上述片狀樹脂組合物硬化(步驟E)。於上述步驟E之階段，片狀樹脂組合物已半硬化，黏度上升，故而即便使用以接合上述凸塊與上述電極之焊錫熔融，亦可抑制焊錫隨著片狀樹脂組合物之流動而流動之情況。其結果為，可進一步抑制由焊錫流動所引起之短路或接觸不良之發生。
上述熱硬化率係將加熱前之狀態設為0%，將完全熱硬化之狀態設為100%，根據藉由示差掃描熱量測定(DSC，Differential Scanning Calorimetry)所獲得之反應熱而求出之值。
於上述構成中，上述步驟D係於100~230℃之範圍內進行加熱之步驟，上述步驟E係利用熔點為180~260℃之範圍內之焊錫而使上述電極與上述凸塊接合之步驟，較佳為上述步驟D中之加熱溫度低於上述焊錫之上述熔點之溫度。
上述步驟D係於100~230℃之範圍內進行加熱之步驟，上述步驟E係利用熔點為180~260℃之範圍內之焊錫而使上述電極與上述凸塊接合之步驟，若上述步驟D中之加熱溫度為低於上述焊錫之上述熔點之溫度，則於上述步驟D中之加熱中，焊錫不會熔融。另一方面，上述片狀樹脂組合物半硬化。即，於步驟D中，於不使焊錫熔融之狀態下使片狀樹脂組合物半硬化。於步驟D中，由於不使焊錫熔融，故而於步驟D中基本上無焊錫流動。
其後，於高於上述步驟D中之加熱之溫度下進行加熱，使上述焊錫熔融而使上述凸塊與上述電極接合，並且使上述片狀組合物硬化(步驟E)。於上述步驟E之階段，由於片狀樹脂組合物已半硬化，故而構成片狀樹脂組合物之樹脂難以流動。因此，即便為了上述凸塊與上述電極之接合而使焊錫熔融，亦可抑制焊錫隨著片狀樹脂組合物之流 動而流動之情況。其結果為，可進而抑制由焊錫流動所引起之短路或接觸不良之發生。
根據本發明，可提供一種可抑制使半導體晶片與安裝用基板電性連接之焊錫因密封半導體晶片與安裝用基板之空隙的片狀樹脂組合物而流動之半導體裝置之製造方法。
10‧‧‧片狀樹脂組合物
11‧‧‧切晶膠帶
11a‧‧‧基材
11b‧‧‧黏著劑層
12‧‧‧背面研磨用膠帶
12a‧‧‧基材
12b‧‧‧黏著劑層
16‧‧‧半導體晶圓
16b‧‧‧背面
18‧‧‧凸塊
22‧‧‧半導體晶片
22a‧‧‧凸塊形成面
40‧‧‧附片狀樹脂組合物之晶片
50‧‧‧安裝用基板
50a‧‧‧表面
52‧‧‧電極
60‧‧‧半導體裝置
100‧‧‧背面研磨用膠帶一體型片狀樹脂組合物
圖1係用於對本發明之一實施形態之半導體裝置之製造方法進行說明的剖面模式圖。
圖2係表示利用流變儀所測得之黏度測定結果之一例的圖表。
圖3係表示黏度曲線之一例的圖表。
圖4係表示熱硬化率與200℃下之黏度之關係之一例的圖表。
圖5係用於對本發明之一實施形態之半導體裝置之製造方法進行說明的剖面模式圖。
圖6係用於對本發明之一實施形態之半導體裝置之製造方法進行說明的剖面模式圖。
圖7係用於對本發明之一實施形態之半導體裝置之製造方法進行說明的剖面模式圖。
圖8係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
圖9係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
圖10係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
圖11係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
圖12係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
圖13係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
圖14係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
圖15係片狀樹脂組合物A之黏度曲線。
圖16係表示片狀樹脂組合物A之熱硬化率與200℃下之黏度之關係的圖表。
圖17係實施例1之樣品之X射線透視圖像。
圖18係比較例1之樣品之X射線透視圖像。
以下，一面參照圖式一面對本發明之實施形態進行說明。圖1及圖5~圖7係用於對本發明之一實施形態之半導體裝置之製造方法進行說明的剖面模式圖。
本實施形態之半導體裝置之製造方法至少包括如下步驟：準備於半導體晶片之凸塊形成面貼附有片狀樹脂組合物之附片狀樹脂組合物之晶片的步驟A；準備形成有電極之安裝用基板之步驟B；以上述片狀樹脂組合物作為貼合面而將上述附片狀樹脂組合物之晶片貼附於上述安裝用基板上，並使形成於上述半導體晶片上之上述凸塊與形成於上述安裝用基板上之電極相對向的步驟C；於上述步驟C後，加熱上述片狀樹脂組合物而使之半硬化的步驟D；以及於上述步驟D後，於高於上述步驟D中之加熱之溫度下進行加熱，將上述凸塊與上述電極接合，並且使上述片狀組合物硬化的步驟 E。
[準備附片狀樹脂組合物之晶片之步驟]
本實施形態之半導體裝置之製造方法中，首先，如圖1所示，準備附片狀樹脂組合物之晶片40(步驟A)。再者，對於附片狀樹脂組合物之晶片40之具體準備方法，於下文一面參照圖8~圖14一面進行說明。
附片狀樹脂組合物之晶片40具有形成有凸塊18之半導體晶片22、及貼附於半導體晶片22之凸塊形成面22a上之片狀樹脂組合物10。於附片狀樹脂組合物之晶片40上，凸塊18埋入至片狀樹脂組合物10中，並且半導體晶片22之凸塊形成面22a貼附於片狀樹脂組合物10上。
(片狀樹脂組合物)
片狀樹脂組合物10具有於將半導體晶片22安裝於安裝用基板50(參照圖5)上時密封半導體晶片22與安裝用基板50之間隙的功能。
片狀樹脂組合物10於未達200℃之溫度下之最低熔融黏度較佳為10Pa．s~5000Pa．s之範圍內，更佳為50Pa．s~3000Pa．s之範圍內，進而較佳為100Pa．s~2000Pa．s之範圍內。若片狀樹脂組合物10於未達200℃之溫度下之最低熔融黏度為10Pa．s~5000Pa．s之範圍內，則於上述步驟C中，可一面將形成於半導體晶片22上之凸塊18與形成於安裝用基板50上之電極52容易地埋入至片狀樹脂組合物10中，一面使之相對向。
所謂片狀樹脂組合物10於未達200℃之溫度下之最低熔融黏度係指熱硬化前於未達200℃之溫度下之最低熔融黏度。
片狀樹脂組合物10於未達200℃之溫度下之最低熔融黏度可藉由選擇片狀樹脂組合物10之構成材料而進行控制。尤其是可藉由選擇熱塑性樹脂而進行控制。具體而言，作為熱塑性樹脂，例如若使用低分 子量者，則可減小未達200℃之溫度下之最低熔融黏度，例如若使用高分子量者，則可增大於未達200℃之溫度下之最低熔融黏度。
又，片狀樹脂組合物10於200℃下加熱10秒鐘後之熱硬化率較佳為6%以上，更佳為10%以上，進而較佳為20%以上。
又，片狀樹脂組合物10於200℃下加熱10秒鐘後之狀態下之200℃下之黏度、即由基於安德關係(Andrade)式所獲得之黏度曲線而獲得之值較佳為100Pa．s~10000Pa．s之範圍內，更佳為150Pa．s~5000Pa．s之範圍內，進而較佳為於200Pa．s~3000Pa．s之範圍內。
若片狀樹脂組合物10於200℃下加熱10秒鐘後之熱硬化率為6%以上，片狀樹脂組合物10於200℃下加熱10秒鐘後之狀態下之200℃下之黏度、即由基於安德方程式所獲得之黏度曲線而獲得之值為100Pa．s~10000Pa．s之範圍內，則於上述步驟D後，片狀樹脂組合物10半硬化，黏度較半硬化前上升。其後，於高於上述步驟D中之加熱之溫度下進行加熱而使片狀樹脂組合物10硬化(步驟E)。於上述步驟E之階段，由於片狀樹脂組合物10已半硬化，黏度上升，故而即便使用以接合凸塊18與電極52之焊錫熔融，亦可抑制焊錫隨著片狀樹脂組合物10之流動而流動之情況。其結果為，可進一步抑制由焊錫流動所引起之短路或接觸不良之發生。
再者，作為用於凸塊18與電極52之接合之焊錫，並無特別限定。作為上述焊錫，可由焊錫構成凸塊18本身。又，亦可由支柱部與連接部構成凸塊，由焊錫構成連接部。又，亦可為塗佈於電極52上等之焊錫層。
此處，關於片狀樹脂組合物10於200℃下之黏度，對使用由基於安德方程式所獲得之黏度曲線而獲得之值(200℃下之黏度)的理由進行說明。
若一面使溫度緩慢地升溫一面利用流變儀(精密旋轉黏度計)進行片狀樹脂組合物10之黏度測定，則熱硬化隨著升溫而進行。因此，於高溫區域之黏度之測定中，無法進行排除了測定時之升溫對熱硬化之影響的測定。因此，藉由求出由基於安德方程式所獲得之黏度曲線而獲得之200℃下之黏度，可獲得排除了黏度測定時之升溫對熱硬化之影響的黏度之值。其原因在於，熱硬化時之焊錫流動會對排除了黏度測定時之升溫對熱硬化之影響的實際之熱硬化時之黏度(半硬化步驟後之黏度)產生影響。
具體而言，藉由如下方式可獲得於200℃下加熱10秒鐘後之狀態下之片狀樹脂組合物10於200℃下之黏度(排除了黏度測定時之升溫對熱硬化之影響的黏度)。
首先，準備於可利用流變儀進行黏度測定之範圍內熱硬化之程度不同的複數種片狀樹脂組合物10(硬化率不明)。
以下，對樣品為5個之情形進行說明。又，將該等樣品稱為樣品A、樣品B、樣品C、樣品D、樣品E。
例如各樣品之熱硬化之程度如下所述。
樣品A：未熱硬化
樣品B：於110℃下加熱10分鐘而熱硬化
樣品C：於110℃下加熱20分鐘而熱硬化
樣品D：於110℃下加熱25分鐘而熱硬化
樣品E：於110℃下加熱35分鐘而熱硬化
其次，對於各樣品，利用流變儀測定靜態黏度。再者，於該測定中，由於一面緩慢升溫一面進行黏度測定，故而熱硬化隨著升溫而進行。因此，無法進行高溫區域之黏度之測定。
圖2係表示利用流變儀所獲得之黏度測定結果之一例的圖表。
如圖2所示，關於樣品A~樣品D，黏度於測定溫度160℃~180℃ 附近急遽上升。又，關於樣品E，黏度於測定溫度150℃~155℃附近急遽上升。此情況表示熱硬化隨著升溫而進行。
此處，作為溫度與黏度之關係，已知有安德方程式(下述數式(1))。各符號分別如下所示。
η：黏度
B：比例常數
E：流動活化能量
R：氣體常數
T：絕對溫度
又，關於黏度與溫度之關係，已知若將橫軸設為1/T且將縱軸設為lnη而進行繪圖，則成為直線。因此，針對於各樣品，將橫軸設為1/T且將縱軸設為lnη而對利用流變儀所測得之結果進行繪圖，則獲得直線並獲得其斜率及截距。此時，繪圖係於獲得直線之範圍內進行。其原因在於，獲得直線之範圍內係進行黏度測定時不進行熱硬化之範圍內。
另一方面，若對安德方程式之兩邊取對數，則獲得下述數式(2)。
數式(2)中，E/R對應於上述所獲得之斜率，lnA對應於上述所獲得之截距。藉由獲得E/R及lnA而獲得溫度與黏度之關係(黏度曲線)。圖3係表示黏度曲線之一例的圖表。該黏度曲線成為排除了黏度測定時之升溫對熱硬化之影響者。圖3係表示樣品A~樣品E之黏度曲線之一例的圖表。
其次，測定各樣品之熱硬化率。熱硬化率係使用示差掃描熱量測定(DSC)對發熱量進行測定而求出。具體而言，首先製作未熱硬化之片狀樹脂組合物(上述例中為樣品A)，測定於升溫速度10℃/分鐘之條件下自-10℃升溫至350℃(假定熱硬化反應完全結束之溫度)時之發熱量(未硬化樣品之反應熱量)。又，製作於特定條件(特定溫度及特定時間)下對熱硬化前之片狀樹脂組合物進行加熱而成之樣品。
其次，對於特定條件下加熱而成之樣品，測定於升溫速度10℃/分鐘之條件下自-10℃升溫至350℃(假定熱硬化反應完全結束之溫度)時之發熱量(於特定條件下熱硬化之樣品之反應熱量)。其後，根據以下之式(3)而獲得熱硬化率。再者，發熱量係使用連接由示差掃描熱量計所測得之發熱波峰之上升溫度與反應結束溫度的2點之直線與波峰所包圍之面積而求出。
式(3)：熱硬化率=[{(未硬化樣品之反應熱量)-(於特定條件下熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)
於上述例中，樣品A之熱硬化率為0(%)。
又，樣品B之熱硬化率為[{(未硬化樣品之反應熱量)-(於110℃下加熱10分鐘而熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)。
又，樣品C之熱硬化率為[{(未硬化樣品之反應熱量)-(於110℃下加熱20分鐘而熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱 量)]×100(%)。
又，樣品D之熱硬化率為[{(未硬化樣品之反應熱量)-(於110℃下加熱25分鐘而熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)。
又，樣品E之熱硬化率為[{(未硬化樣品之反應熱量)-(於110℃下加熱35分鐘而熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)。
其次，以熱硬化率作為橫軸並以200℃下之黏度作為縱軸進行繪圖。並且，針對於繪圖，獲得最小平方近似曲線。圖4係表示熱硬化率與200℃下之黏度之關係之一例的圖表。
其後，製作將熱硬化前之片狀樹脂組合物10於200℃下加熱10秒鐘而成之樣品，利用示差掃描熱量測定(DSC)以與上述相同之方式求出其熱硬化率。並且，自所獲得之熱硬化率並根據上述最小平方近似曲線而獲得黏度。
藉此，可獲得於200℃下加熱10秒鐘後之狀態下之片狀樹脂組合物10於200℃下之黏度(排除了黏度測定時之升溫對熱硬化之影響的黏度)。
作為片狀樹脂組合物10，可列舉：併用熱塑性樹脂與熱硬化性樹脂者。又，亦可單獨使用熱硬化性樹脂。
作為上述熱塑性樹脂，可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(Polyethylene terephthalate，聚對苯二甲酸乙二酯)或PBT(Polybutylene terephthalate，聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂等。該等熱塑性樹脂可單獨使用 或併用2種以上。於該等熱塑性樹脂中，尤佳為離子性雜質較少，耐熱性較高，可確保半導體晶片之可靠性之丙烯酸系樹脂。
作為上述丙烯酸系樹脂，並無特別限定，可列舉：以具有碳數30以下、尤其是碳數4~18之直鏈或支鏈之烷基的丙烯酸或甲基丙烯酸之酯之1種或2種以上作為成分之聚合物等。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。
又，作為形成上述聚合物之其他單體，並無特別限定，例如可列舉：如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、順丁烯二酸、反丁烯二酸或丁烯酸等之含羧基之單體，如順丁烯二酸酐或衣康酸酐等之酸酐單體，如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等之含羥基之單體，如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等之含磺酸基之單體，或如2-羥基乙基丙烯醯基磷酸酯等之含磷酸基之單體。
熱塑性樹脂相對於片狀樹脂組合物10整體之含量較佳為3重量%以上，更佳為4重量%以上。若為4重量%以上，則可獲得良好之可撓性。另一方面，樹脂成分中之熱塑性樹脂之含量較佳為15重量%以下，更佳為12重量%以下，進而較佳為8重量%以下。若為8重量%以下，則可獲得良好之熱可靠性。
於上述熱塑性樹脂中，為了將半硬化前之片狀樹脂組合物10之 黏度設為低黏度，較佳為丙烯酸系樹脂。
作為上述熱硬化性樹脂，可列舉：酚系樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂或熱硬化性聚醯亞胺樹脂等。該等樹脂可單獨使用或併用2種以上。尤其是較佳為腐蝕半導體晶片之離子性雜質等之含有較少之環氧樹脂。又，作為環氧樹脂之硬化劑，較佳為酚系樹脂。
上述環氧樹脂只要為通常用作接著劑組合物者，則並無特別限定，例如可使用：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、酚系酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂或多官能環氧樹脂、或者乙內醯脲型、三縮水甘油基異氰尿酸酯型或縮水甘油胺型等環氧樹脂。該等可單獨使用或併用2種以上。該等環氧樹脂中，尤佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四酚基乙烷型環氧樹脂。其原因在於該等環氧樹脂與作為硬化劑之酚系樹脂具有充分之反應性且耐熱性等優異。
進而，上述酚系樹脂係作為上述環氧樹脂之硬化劑發揮作用者，例如可列舉：酚系酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基酚系酚醛清漆樹脂、壬基酚系酚醛清漆樹脂等酚醛清漆型酚系樹脂、可溶酚醛型酚系樹脂、聚對羥基苯乙烯等聚氧苯乙烯等。該等可單獨使用或併用2種以上。該等酚系樹脂中，尤佳為酚系酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於可提昇密封可靠性。
關於上述環氧樹脂與酚系樹脂之調配比率，例如較佳為以上述環氧樹脂成分中之環氧基每1當量而酚系樹脂中之羥基成為0.5~2.0當量之方式調配。更佳為0.8~1.2當量。即，若兩者之調配比率不在上述範圍內，則不進行充分之硬化反應，其原因在於環氧樹脂硬化物之特性變得容易劣化。
熱硬化性樹脂相對於片狀樹脂組合物10整體之含量較佳為10重量%以上，更佳為12重量%以上，進而較佳為15重量%以上。若為10%以上，則可獲得良好之可撓性。另一方面，樹脂成分中之熱硬化性樹脂之含量較佳為30重量%以下，更佳為25重量%以下，進而較佳為20重量%以下。若為20重量%以下，則抑制片材之黏著，操作性提昇。
作為環氧樹脂與酚系樹脂之熱硬化促進觸媒，並無特別限定，可自公知之熱硬化促進觸媒中適當選擇使用。熱硬化促進觸媒可單獨或組合2種以上而使用。作為熱硬化促進觸媒，例如可使用胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等。
關於上述熱硬化促進觸媒之含量，相對於熱硬化性樹脂100重量份，較佳為0.7重量份以上，更佳為2.4重量份以上，進而較佳為4.8重量份以上。若為4.8重量份以上，則可於半硬化步驟中使片狀樹脂組合物10容易地半硬化。又，熱硬化促進觸媒之含量較佳為24重量份以下。若為24重量份以下，則可提昇熱硬化性樹脂之保存性。
又，於片狀樹脂組合物10中，可適當調配無機填充劑。無機填充劑之調配可賦予導電性，提昇熱導率，或調節儲存模數等。
作為上述無機填充劑，例如可列舉：包含二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊錫等金屬或合金類、其他碳等之各種無機粉末。該等可單獨使用或併用2種以上。其中，可較佳地使用二氧化矽尤其是熔融二氧化矽。
無機填充劑之平均粒徑較佳為於0.01~30μm之範圍內，更佳為於0.05~10μm之範圍內。再者，於本發明中，亦可將平均粒徑相互不同之無機填充劑彼此組合使用。又，平均粒徑係藉由光度式粒度分 佈計(HORIBA製造、裝置名；LA-910)而求出之值。
上述無機填充劑之調配量較佳為相對於有機樹脂成分100重量份而設為100~1400重量份。尤佳為230~900重量份。若將無機填充劑之調配量設為100重量份以上，則耐熱性或強度提昇。又，藉由設為1400重量份以下，可確保流動性。藉此，可防止接著性或埋入性降低。
再者，於片狀樹脂組合物10中，除上述無機填充劑以外，視需要亦可適當調配其他添加劑。作為其他添加劑，例如可列舉：阻燃劑、矽烷偶合劑、離子捕捉劑、碳黑等顏料等。作為上述阻燃劑，例如可列舉：三氧化銻、五氧化銻、溴化環氧樹脂等。該等可單獨使用或併用2種以上。作為上述矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二環氧基矽烷等。該等化合物可單獨使用或併用2種以上。作為上述離子捕捉劑，例如可列舉鋁碳酸鎂類、氫氧化鉍等。該等可單獨使用或併用2種以上。又，為了於安裝時去除焊錫之氧化膜，亦可添加有機酸。
片狀樹脂組合物10之厚度(於為複層之情形時，為總厚度)並無特別限定，但若考慮硬化後之樹脂之強度或填充性，則較佳為5μm以上且500μm以下。再者，片狀樹脂組合物10之厚度可考慮晶片22與安裝用基板50之間隙之寬度而適當設定。
片狀樹脂組合物10例如以如下方式製作。首先，製作作為片狀樹脂組合物10之形成材料之樹脂組合物溶液。於該樹脂組合物溶液中，如上所述般調配上述樹脂組合物、填料或其他各種添加劑等。
其次，以成為特定厚度之方式將樹脂組合物溶液塗佈於基材隔片上而形成塗佈膜後，於特定條件下使該塗佈膜乾燥而形成片狀樹脂組合物10。作為塗佈方法，並無特別限定，例如可列舉輥式塗佈、網 版塗佈、凹版塗佈等。又，作為乾燥條件，例如於乾燥溫度70~160℃、乾燥時間1~5分鐘之範圍內進行。
作為半導體晶片22之厚度，並無特別限定，例如可於10~1000μm之範圍內適當設定。
作為形成於半導體晶片22上之凸塊18之高度，並無特別限定，例如可於2~300μm之範圍內適當設定。
作為凸塊18之構成材料，並無特別限定，較佳為焊錫，可列舉Sn-Pb系、Pb-Sn-Sb系、Sn-Sb系、Sn-Pb-Bi系、Bi-Sn系、Sn-Cu系、Sn-Pb-Cu系、Sn-In系、Sn-Ag系、Sn-Pb-Ag系、Pb-Ag系、Sn-Ag-Cu系之焊錫。其中，可較佳地使用熔點於210~230℃之範圍內者，上述焊錫中，例如較佳為Sn-Ag系。
[準備安裝用基板之步驟]
又，如圖5所示，準備於表面50a上形成有電極52之安裝用基板50(步驟B)。
作為安裝用基板50，可使用引線框架或電路基板(配線電路基板等)等各種基板。作為上述基板之材質，並無特別限定，可列舉陶瓷基板或塑膠基板。作為塑膠基板，例如可列舉：環氧基板、雙馬來醯亞胺三基板、聚醯亞胺基板等。又，作為安裝用基板50，亦可使用半導體晶圓。
[使形成於半導體晶片上之凸塊與形成於安裝用基板上之電極相對向之步驟]
上述步驟A及上述步驟B後，如圖6所示，以片狀樹脂組合物10作為貼合面而將附片狀樹脂組合物之晶片40貼附於安裝用基板50上，使形成於半導體晶片22上之凸塊18與形成於安裝用基板50上之電極52對向(步驟C)。具體而言，首先，使附片狀樹脂組合物之晶片40之片狀樹脂組合物10相對向地配置於安裝用基板50上，其次，使用倒裝晶片 接合機自附片狀樹脂組合物之晶片40側施加壓力。藉此，一面將凸塊18與電極52埋入至片狀樹脂組合物10中，一面使之相對向。貼合時之溫度較佳為100~200℃，更佳為150~190℃。其中，較佳為低於焊錫之熔點之溫度。又，貼合時之壓力較佳為0.01~10MPa，更佳為0.1~1MPa。
若貼合之溫度為150℃以上，則片狀樹脂組合物10之黏度降低，可無空隙地填充凹凸。又，若貼合之溫度為200℃以下，則可於抑制片狀樹脂組合物10之硬化反應之狀態下直接貼合。
此時，若片狀樹脂組合物10於未達200℃之溫度下之最低熔融黏度為10Pa．s~5000Pa．s之範圍內，則可一面將形成於半導體晶片22上之凸塊18與形成於安裝用基板50上之電極52容易地埋入至片狀樹脂組合物10中，一面使之相對向。
[使片狀樹脂組合物半硬化之步驟]
於上述步驟C後，加熱片狀樹脂組合物10而使之半硬化(步驟D)。上述步驟D中之加熱溫度較佳為100~230℃，更佳為150~210℃。上述步驟D中之加熱溫度較佳為低於焊錫之熔點之溫度。又，加熱時間較佳為1~300秒之範圍內，更佳為3~120秒之範圍內。
此時，若片狀樹脂組合物10於200℃下加熱10秒鐘後之熱硬化率為6%以上，於200℃下加熱10秒鐘後之狀態下之200℃下之黏度、即由基於安德方程式所獲得之黏度曲線而獲得之值為100Pa．s~10000Pa．s之範圍內，則於步驟D後，片狀樹脂組合物10半硬化，黏度較半硬化前上升。其後，如下所述，於下一步驟E中，於高於步驟D中之加熱之溫度下進行加熱而使片狀樹脂組合物10硬化。於上述步驟E之階段，片狀樹脂組合物10已半硬化，黏度上升，故而即便使用以接合凸塊18與電極52之焊錫熔融，亦可抑制焊錫隨著片狀樹脂組合物10之流動而流動之情況。其結果為，可進而抑制由焊錫流動所引起之短路 或接觸不良之發生。
[使凸塊與電極接合並且使片狀組合物硬化之步驟]
於上述步驟D後，於高於上述步驟D中之加熱之溫度下進行加熱，如圖7所示，使凸塊18與電極52接合並且使片狀組合物10硬化(步驟E)。圖7係表示凸塊18由焊錫所構成並藉由凸塊18熔融而使凸塊18與電極52接合(電性連接)之情況。
此時之加熱溫度較佳為180~400℃，更佳為200~300℃。又，加熱時間較佳為1~300秒之範圍內，更佳為3~120秒之範圍內。
如上所述，於本實施形態中，凸塊18為熔點為180~260℃之範圍內之焊錫，上述步驟D係於100~230℃之範圍內進行加熱之步驟，上述步驟D中之加熱溫度較佳為低於上述焊錫之上述熔點之溫度。若使用熔點為180~260℃之範圍內之焊錫，則就上述步驟D中之加熱而言，焊錫不熔融。另一方面，片狀樹脂組合物10半硬化。即，於步驟D中，在不使焊錫熔融之狀態下使片狀樹脂組合物10半硬化。於步驟D中，不使焊錫熔融，因此於步驟D中基本上無焊錫流動。
其後，該步驟E中，於高於上述步驟D中之加熱之溫度下進行加熱，使焊錫熔融而使凸塊18與電極52接合並且使片狀組合物10硬化。於步驟E之階段，全部片狀樹脂組合物10均半硬化，故而構成片狀樹脂組合物10之樹脂難以流動。因此，即便為了凸塊18與電極52之接合而使焊錫熔融，亦可抑制焊錫隨著片狀樹脂組合物10之流動而流動之情況。其結果為，可進而抑制由焊錫流動所引起之短路或接觸不良之發生。
藉此，獲得半導體裝置60。
以上，根據本實施形態之半導體裝置之製造方法，於使形成於半導體晶片22上之凸塊18與形成於安裝用基板50上之電極52對向之狀態下加熱片狀樹脂組合物10而使之半硬化(步驟D)。因此，片狀樹脂 組合物10成為難以因其後之加熱而流動之狀態。其後，於高於步驟D中之加熱之溫度下進行加熱而使凸塊18與電極52接合並且使片狀組合物10硬化(步驟E)。於步驟E之階段，全部片狀樹脂組合物10均半硬化，故而構成片狀樹脂組合物10之樹脂難以流動。因此，即便為了凸塊18與電極52之接合而使焊錫熔融，亦可抑制焊錫隨著片狀樹脂組合物10之流動而流動之情況。其結果為，可抑制由焊錫流動所引起之短路或接觸不良之發生。
其次，一面參照圖8~圖14一面對附片狀樹脂組合物之晶片之具體準備方法進行說明。
本實施形態之片狀樹脂組合物可與背面研磨用膠帶或切晶膠帶一體化地使用。藉此，可以較佳之效率製造半導體裝置。圖8~圖14係用於對附片狀樹脂組合物之晶片之準備方法之一例進行說明的剖面模式圖。
[背面研磨用膠帶一體型片狀樹脂組合物]
本實施形態之背面研磨用膠帶一體型片狀樹脂組合物具備背面研磨用膠帶及上述片狀樹脂組合物。
圖8係背面研磨用膠帶一體型片狀樹脂組合物100之剖面模式圖。如圖8所示，背面研磨用膠帶一體型片狀樹脂組合物100具備背面研磨用膠帶12及片狀樹脂組合物10。背面研磨用膠帶12具備基材12a及黏著劑層12b，黏著劑層12b設置於基材12a上。片狀樹脂組合物10設置於黏著劑層12b上。
再者，片狀樹脂組合物10亦可如圖8所示般不積層於背面研磨用膠帶12之整面，只要以與半導體晶圓16(參照圖9)之貼合充分之尺寸設置即可。
(背面研磨用膠帶)
背面研磨用膠帶12具備基材12a及積層於基材12a上之黏著劑層 12b。
上述基材12a係成為背面研磨用膠帶一體型片狀樹脂組合物100之強度母體者。例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯基硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧樹脂、金屬(箔)、紙等。於黏著劑層12b為紫外線硬化型之情形時，基材12a較佳為對於紫外線具有透過性者。
上述基材12a可適當選擇使用同種或異種者，視需要可使用混合有數種者。對於基材12a之表面，可實施慣用之表面處理。對於基材12a，為了賦予防靜電能力，可於上述基材12a上設置包含金屬、合金、該等之氧化物等之厚度為30~500Å左右的導電性物質之蒸鍍層。基材12a可為單層或2種以上之複層。
基材12a之厚度可適當決定，通常為5μm以上且200μm以下左右，較佳為35μm以上且120μm以下。
再者，於基材12a中，亦可包含各種添加劑(例如著色劑、填充劑、塑化劑、可塑劑、抗氧化劑、界面活性劑、阻燃劑等)。
用於形成黏著劑層12b之黏著劑只要為可於半導體晶圓之背面研磨時保持半導體晶圓並可於背面研磨後自半導體晶圓剝離者，則並無特別限定。例如可使用丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性接著劑。作為上述感壓性接著劑，就半導體晶圓或玻璃等避忌污染 之電子零件之利用超純水或醇等有機溶劑之清潔洗浄性等方面而言，較佳為以丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑。
作為上述丙烯酸系聚合物，可列舉：使用丙烯酸酯作為主單體成分者。作為上述丙烯酸酯，例如可列舉：使用(甲基)丙烯酸烷基酯(例如甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數1~30尤其是碳數4~18之直鏈狀或支鏈狀之烷基酯等)及(甲基)丙烯酸環烷基酯(例如環戊酯、環己酯等)之1種或2種以上作為單體成分之丙烯酸系聚合物等。再者，所謂(甲基)丙烯酸酯係指丙烯酸酯及/或甲基丙烯酸酯，本發明之(甲基)全部具有相同之意義。
為了凝集力、耐熱性等之改質，上述丙烯酸系聚合物視需要亦可包含對應於可與上述(甲基)丙烯酸烷基酯或環烷基酯共聚合之其他單體成分之單位。作為上述單體成分，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、順丁烯二酸、反丁烯二酸、丁烯酸等含羧基之單體；順丁烯二酸酐、衣康酸酐等酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含羥基之單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基之單體；2-羥基乙基丙烯醯基磷酸酯等含磷酸基之單體；丙烯醯胺、丙烯腈等。該等可共聚合之單體成分可使用1種或2種以上。該等可共聚合之單體之使用量較佳為全部單體成分之40重量%以下。
進而，為了進行交聯，上述丙烯酸系聚合物亦可包含多官能性單體等作為視需要之共聚合用單體成分。作為上述多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸乙酯(甲基)丙烯酸酯等。該等多官能性單體亦可使用1種或2種以上。就黏著特性等方面而言，多官能性單體之使用量較佳為全部單體成分之30重量%以下。
上述丙烯酸系聚合物可藉由將單一單體或2種以上之單體混合物賦予聚合而獲得。聚合亦可藉由溶液聚合、乳化聚合、塊狀聚合、懸濁聚合等任一方式而進行。就防止對清潔之被黏著體之污染等方面而言，較佳為低分子量物質之含量較小。就該方面而言，丙烯酸系聚合物之數平均分子量較佳為30萬以上，進而較佳為40萬~300萬左右。
又，於上述黏著劑中，為了提高作為基礎聚合物之丙烯酸系聚合物等之數平均分子量，亦可適當採用外部交聯劑。作為外部交聯方法之具體手段，可列舉：添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂交聯劑並使其反應之方法。於使用外部交聯劑之情形時，其使用量係根據與可交聯之基礎聚合物之平衡，進而根據作為黏著劑之使用用途而適當決定。通常，相對於上述基礎聚合物100重量份，較佳為調配5重量份左右以下、進而0.1~5重量份。進而，於黏著劑中，除上述成分以外，視需要亦可使用先前公知之各種黏著賦予劑、抗老化劑等添加劑。
黏著劑層12b可藉由放射線硬化型黏著劑而形成。放射線硬化型黏著劑可利用紫外線等放射線之照射增大交聯度而容易地降低其黏著力，可容易地進行拾取。作為放射線，可列舉：X射線、紫外線、電 子束、α射線、β射線、中子射線等。
放射線硬化型黏著劑可無特別限定地使用具有碳-碳雙鍵等放射線硬化性官能基且顯示黏著性者。作為放射線硬化型黏著劑，例如可例示：於上述丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑中調配放射線硬化性單體成分或低聚物成分之添加型放射線硬化性黏著劑。
作為調配之放射線硬化性單體成分，例如可列舉：胺基甲酸乙酯低聚物、胺基甲酸乙酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又，放射線硬化性低聚物成分可列舉胺基甲酸乙酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，較佳為其重量平均分子量於100~30000左右之範圍者。關於放射線硬化性單體成分或低聚物成分之調配量，可根據上述黏著劑層之種類而適當決定可降低黏著劑層之黏著力之量。通常相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如為5~500重量份，較佳為40~150重量份左右。
又，作為放射線硬化型黏著劑，除上述所說明之添加型放射線硬化性黏著劑以外，作為基礎聚合物，可列舉：使用在聚合物側鏈或主鏈中或者主鏈末端具有碳-碳雙鍵者之內在型放射線硬化性黏著劑。其原因在於，內在型放射線硬化性黏著劑無需含有或大多不含有作為低分子成分之低聚物成分等，故而低聚物成分等不會於黏著劑中經時性移動，可形成穩定之層結構之黏著劑層。
上述具有碳-碳雙鍵之基礎聚合物可無特別限定地使用具有碳-碳雙鍵且具有黏著性者。作為上述基礎聚合物，較佳為以丙烯酸系聚合物作為基本骨架者。作為丙烯酸系聚合物之基本骨架，可列舉上述所 例示之丙烯酸系聚合物。
碳-碳雙鍵向上述丙烯酸系聚合物中之導入法並無特別限定，可採用各種方法，但於將碳-碳雙鍵導入至聚合物側鏈中之情形時，分子設計較為容易。例如可列舉：預先使具有官能基之單體與丙烯酸系聚合物共聚合後，在維持碳-碳雙鍵之放射線硬化性之情況下使具有可與該官能基反應之官能基及碳-碳雙鍵的化合物進行縮合或加成反應之方法。
作為該等官能基之組合之例，可列舉：羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。於該等官能基之組合中，就追蹤反應之容易性而言，較佳為羥基與異氰酸酯基之組合。又，只要為藉由該等官能基之組合而生成上述具有碳-碳雙鍵之丙烯酸系聚合物之組合，則官能基可位於丙烯酸系聚合物與上述化合物之任一側，就上述較佳為之組合而言，較佳為丙烯酸系聚合物具有羥基且上述化合物具有異氰酸酯基之情形。於該情形時，作為具有碳-碳雙鍵之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。又，作為丙烯酸系聚合物，可使用：使上述例示之含羥基之單體或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二乙二醇單乙烯醚之醚系化合物等共聚合而成者。
上述內在型放射線硬化性黏著劑可單獨使用上述具有碳-碳雙鍵之基礎聚合物(尤其是丙烯酸系聚合物)，亦可在不使特性惡化之程度下調配上述放射線硬化性單體成分或低聚物成分。關於放射線硬化性低聚物成分等，通常相對於基礎聚合物100重量份，於30重量份之範圍內，較佳為於0~10重量份之範圍內。
於上述放射線硬化型黏著劑中，較佳為在藉由紫外線等而硬化之情形時含有光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2- 羥基環氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二環氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-啉基丙烷-1等苯乙酮系化合物；安息香乙醚、安息香異丙醚、茴香偶姻甲醚等安息香醚系化合物；苄基二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯酮-1,1-丙二酮-2-(鄰環氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯基苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物；樟腦醌；鹵化酮；醯基膦氧化物；醯基磷酸酯等。關於光聚合起始劑之調配量，相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如為0.05~20重量份左右。
再者，於照射放射線時，因氧而阻礙硬化之情形時，較理想為利用某些方法自放射線硬化型黏著劑層12b之表面阻斷氧(空氣)。例如可列舉：利用隔片被覆上述黏著劑層12b之表面之方法或於氮氣環境中進行紫外線等放射線之照射之方法等。
再者，於黏著劑層12b中，亦可包含各種添加劑(例如著色劑、增黏劑、增量劑、填充劑、黏著賦予劑、塑化劑、抗老化劑、抗氧化劑、界面活性劑、交聯劑等)。
黏著劑層12b之厚度並無特別限定，就防止晶片切割面之缺陷、保持片狀樹脂組合物10之固定的兼具性等觀點而言，較佳為1~50μm左右。較佳為2~30μm，進而較佳為5~25μm。
(背面研磨用膠帶一體型片狀樹脂組合物之製造方法)
背面研磨用膠帶一體型片狀樹脂組合物100例如可藉由如下方式製作：預先分別製作背面研磨用膠帶12及片狀樹脂組合物10，最後將 該等貼合。
(附片狀樹脂組合物之晶片之準備方法)
其次，對附片狀樹脂組合物之晶片之準備方法進行說明。圖9~圖14係表示使用背面研磨用膠帶一體型片狀樹脂組合物100之附片狀樹脂組合物之晶片40準備方法的各步驟之圖。
具體而言，該附片狀樹脂組合物之晶片之準備方法包括：將半導體晶圓16之形成有凸塊18之凸塊形成面22a與背面研磨用膠帶一體型片狀樹脂組合物100之片狀樹脂組合物10貼合之貼合步驟；對半導體晶圓16之背面16b進行研磨之研磨步驟；將切晶膠帶11貼附於半導體晶圓16之背面16b上之晶圓固定步驟；將背面研磨用膠帶12剝離之剝離步驟；對半導體晶圓16進行切晶而形成附片狀樹脂組合物之半導體晶片40之切晶步驟；及將附片狀樹脂組合物之半導體晶片40自切晶膠帶11剝離之拾取步驟。
<貼合步驟>
於貼合步驟中，將半導體晶圓16之形成有凸塊18之凸塊形成面22a與背面研磨用膠帶一體型片狀樹脂組合物100之片狀樹脂組合物10貼合(參照圖9)。
於半導體晶圓16之凸塊形成面22a上，形成有複數之凸塊18(參照圖9)。凸塊18之高度係根據用途而決定，通常為5~100μm左右。當然，半導體晶圓16中之各凸塊18之高度可相同亦可不同。
形成於半導體晶圓16表面之凸塊18之高度X(μm)與片狀樹脂組合物10之厚度Y(μm)較佳為滿足0.5≦Y/X≦2之關係。更佳為0.5≦Y/X≦1.5，進而較佳為0.8≦Y/X≦1.3。
藉由凸塊18之高度X(μm)與片狀樹脂組合物10之厚度Y(μm)滿足上述關係，可充分地填充半導體晶片22與安裝用基板50之間的空間，並且可防止過剩之片狀樹脂組合物10自該空間溢出，可防止片狀樹脂 組合物10對半導體晶片22之污染等。再者，於各凸塊18之高度不同之情形時，以最高凸塊18之高度作為基準。
首先，將任意地設置於背面研磨用膠帶一體型片狀樹脂組合物100之片狀樹脂組合物10上之隔片適當地剝離，如圖9所示，使半導體晶圓16之形成有凸塊18之凸塊形成面22a與片狀樹脂組合物10對向，使片狀樹脂組合物10與半導體晶圓16貼合(安裝)。
貼合之方法並無特別限定，較佳為利用壓接之方法。壓接之壓力較佳為0.1MPa以上，更佳為0.2MPa以上。若為0.1MPa以上，則可良好地埋入半導體晶圓16之凸塊形成面22a之凹凸。又，壓接之壓力之上限並無特別限定，較佳為1MPa以下，更佳為0.5MPa以下。
貼合之溫度較佳為40℃以上，更佳為60℃以上。若為40℃以上，則片狀樹脂組合物10之黏度降低，可無空隙地填充半導體晶圓16之凹凸。又，貼合之溫度較佳為100℃以下，更佳為80℃以下。若為100℃以下，則可於抑制片狀樹脂組合物10之硬化反應之狀態下直接貼合。
貼合較佳為於減壓下進行，例如為1000Pa以下，較佳為500Pa以下。下限並無特別限定，例如1Pa以上。
<研磨步驟>
於研磨步驟中，對半導體晶圓16之與凸塊形成面22a相反側之面(即，背面)16b進行研磨(參照圖10)。作為用於半導體晶圓16之背面研磨之薄型加工機，並無特別限定，例如可例示研磨機(背面研磨機)、研磨墊等。又，亦可利用蝕刻等化學方法進行背面研磨。背面研磨進行至半導體晶圓16成為所需之厚度(例如20~700μm)。
<晶圓固定步驟>
研磨步驟後，將切晶膠帶11貼附於半導體晶圓16之背面16b上(參照圖11)。再者，切晶膠帶11具有於基材11a上積層有黏著劑層11b之 結構。作為基材11a及黏著劑層11b，可使用背面研磨用膠帶12之基材12a及黏著劑層12b之項所示之成分及製法而較佳地製作。
<剝離步驟>
其次，將背面研磨用膠帶12剝離(圖12參照)。藉此，成為片狀樹脂組合物10露出之狀態。
於將背面研磨用膠帶12剝離時，黏著劑層12b具有放射線硬化性之情形時，對黏著劑層12b照射放射線使黏著劑層12b硬化，藉此可容易地進行剝離。放射線之照射量只要考慮所使用之放射線之種類或黏著劑層之硬化度等而適當設定即可。
<切晶步驟>
於切晶步驟中，如圖13所示，對半導體晶圓16及片狀樹脂組合物10進行切晶而形成經切晶之附片狀樹脂組合物之半導體晶片40。切晶係根據常規方法自半導體晶圓16之貼合有片狀樹脂組合物10之凸塊形成面22a進行。例如可採用進行切口直至切晶膠帶11之稱為全切之切割方式等。作為本步驟中所使用之切晶裝置，並無特別限定，可使用先前公知者。
再者，於緊接著切晶步驟而進行切晶膠帶11之擴展之情形時，該擴展可使用先前公知之擴展裝置而進行。
<拾取步驟>
如圖14所示，將附片狀樹脂組合物之半導體晶片40自切晶膠帶11剝離(拾取附片狀樹脂組合物之半導體晶片40)。作為拾取之方法，並無特別限定，可採用先前公知之各種方法。
此處，拾取係於切晶膠帶11之黏著劑層11b為紫外線硬化型之情形時且於對黏著劑層11b照射紫外線後進行。藉此，黏著劑層11b對於半導體晶片22之黏著力降低，半導體晶片22之剝離變得容易。
藉此，完成附片狀樹脂組合物之半導體晶片40之準備。
又，本發明之附片狀樹脂組合物之半導體晶片之準備方法並不限定於使用背面研磨用膠帶一體型片狀樹脂組合物之方法。
例如亦可使用切晶膠帶一體型片狀樹脂組合物進行準備。切晶膠帶一體型片狀樹脂組合物具備切晶膠帶及片狀樹脂組合物。切晶膠帶具備基材及黏著劑層，黏著劑層設置於基材上。片狀樹脂組合物設置於黏著劑層上。切晶膠帶可採用與上述背面研磨用膠帶相同之構成。
具體而言，該附片狀樹脂組合物之晶片之準備方法包括：將半導體晶圓之形成有凸塊之凸塊形成面與切晶膠帶一體型片狀樹脂組合物之片狀樹脂組合物貼合之貼合步驟；對半導體晶圓進行切晶而形成附片狀樹脂組合物之半導體晶片之切晶步驟；及將附片狀樹脂組合物之半導體晶片自切晶膠帶剝離之拾取步驟。
又，本發明之附片狀樹脂組合物之半導體晶片之準備方法亦可使用單體之片狀樹脂組合物進行準備。
具體而言，使用單體之片狀樹脂組合物之附片狀樹脂組合物之晶片的準備方法例如包括：將半導體晶圓之形成有凸塊之凸塊形成面與片狀樹脂組合物貼合之貼合步驟；將背面研磨用膠帶貼合於片狀樹脂組合物之與半導體晶圓貼合面相反側的面上之步驟；對半導體晶圓之背面進行研磨之研磨步驟；將切晶膠帶貼附於半導體晶圓之背面上之晶圓固定步驟；將背面研磨用膠帶剝離之剝離步驟；對半導體晶圓進行切晶而形成附片狀樹脂組合物之半導體晶片之切晶步驟；及將附片狀樹脂組合物之半導體晶片自切晶膠帶剝離之拾取步驟。
又，作為使用單體之片狀樹脂組合物之附片狀樹脂組合物之晶片的準備方法之其他例，該附片狀樹脂組合物之晶片之準備方法包括：將半導體晶圓之形成有凸塊之凸塊形成面與片狀樹脂組合物貼合之貼合步驟；將切晶膠帶貼合於片狀樹脂組合物之與半導體晶圓貼合 面相反側之面上之步驟；對半導體晶圓進行切晶而形成附片狀樹脂組合物之半導體晶片之切晶步驟；及將附片狀樹脂組合物之半導體晶片自切晶膠帶剝離之拾取步驟。
[實施例]
以下，例示性地詳細說明本發明之較佳之實施例。其中，關於該實施例中所記載之材料或調配量等，只要無特別地限定性記載，則並非將本發明之範圍僅限定於該等。
<片狀樹脂組合物之製作>
將以下之成分按照表1所示之比率溶解於甲基乙基酮中，製備固形分濃度成為25.4~60.6重量%的接著劑組合物之溶液。
丙烯酸系聚合物：以丙烯酸乙酯-甲基丙烯酸甲酯作為主成分之丙烯酸酯系聚合物(商品名「帕戈隆W-197CM」、根上工業股份有限公司製造)
環氧樹脂1：商品名「Epikote 1004」、JER股份有限公司製造
環氧樹脂2：商品名「Epikote 828」、JER股份有限公司製造
酚系樹脂：商品名「Milex XLC-4L」、三井化學股份有限公司製造
助焊劑：2-苯氧基苯甲酸
無機填充劑：球狀二氧化矽(商品名「SO-25R」、Admatechs股份有限公司製造)
熱硬化促進觸媒：咪唑觸媒(商品名「2PHZ-PW」、四國化成股份有限公司製造)
將該接著劑組合物之溶液塗佈於作為剝離襯墊(隔片)之包含經聚矽氧脫模處理之厚度為50μm之聚對苯二甲酸乙二酯膜的脫模處理膜上之後，於130℃下乾燥2分鐘，藉此製作厚度35μm之片狀樹脂組合物A。
[未達200℃之溫度下之最低熔融黏度之測定]
將使用旋轉式黏度計HAAKE Roto Visco 1(Thermo Fisher Scientific公司製造)測定片狀樹脂組合物A時之80℃~200℃下的熔融黏度之最低值設為最低熔融黏度。測定條件係設為升溫速度10℃/min、剪切速度5(1/s)。將結果示於表1。
(於200℃下加熱10秒鐘後之熱硬化率之測定)
使用TA Instrument公司製造之示差掃描熱量計、產品名「Q2000」按照以下之方式測定熱硬化率。
首先，對於未進行熱硬化處理之片狀樹脂組合物A測定於升溫速度10℃/分鐘之條件下自-10℃升溫至350℃(假定熱硬化反應完全結束之溫度)時之發熱量(未硬化樣品之反應熱量)。
又，準備於200℃下將片狀樹脂組合物A加熱10秒鐘之樣品，測定於升溫速度10℃/分鐘之條件下自-10℃升溫至350℃(假定熱硬化反應完全結束之溫度)時之發熱量(於200℃下加熱10秒鐘之樣品之反應熱量)。其後，根據以下之式(3)而獲得熱硬化率。
式(3)：熱硬化率=[{(未硬化樣品之反應熱量)-(於200℃下加熱10秒鐘之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)
再者，發熱量係使用連接由示差掃描熱量計所測得之發熱波峰之上升溫度與反應結束溫度的2點之直線與波峰所包圍之面積而求出。
將結果示於表1。
[於200℃下加熱10秒鐘後之狀態下之基於安德方程式之200℃下之黏度]
首先，針對於片狀樹脂組合物A，準備以下之樣品。
樣品A-1：未熱硬化
樣品B-1：於110℃下加熱10分鐘而熱硬化
樣品C-1：於110℃下加熱20分鐘而熱硬化
樣品D-1：於110℃下加熱25分鐘而熱硬化
樣品E-1：於110℃下加熱35分鐘而熱硬化
其次，對於各樣品，利用旋轉式黏度計(Thermo Fisher Scientific公司製造、產品名「HAAKE Roto Visco 1」)測定靜態黏度。測定條件係設為間隙100μm、旋轉板直徑20mm、升溫速度10℃/min、剪切速度5(1/s)。
針對於各樣品，將橫軸設為1/T且將縱軸設為lnη而對利用旋轉式黏度計所測得之結果進行繪圖，獲得其斜率及截距。此時，繪圖係於獲得直線之範圍內進行。
此處，對於安德方程式之兩邊取對數者係如下述數式(2)所示。
數式(2)中，E/R對應於上述所獲得之斜率，lnA對應於上述所獲得之截距。即，藉由獲得E/R及lnA而獲得溫度與黏度之關係(黏度曲線)。圖15係片狀樹脂組合物A之黏度曲線。該黏度曲線成為排除了黏度測定時之升溫對熱硬化之影響者。
其次，測定各樣品(樣品B-1、樣品C-1、及、樣品D-1)之熱硬化率。熱硬化率之測定方法係設為與上述於200℃下加熱10秒鐘後之熱硬化率之測定相同。
其結果為，如下所述。
樣品B-1之熱硬化率： [{(未硬化樣品之反應熱量)-(於110℃下加熱10分鐘而熱硬化之 樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)=2.9(%)
樣品C-1之熱硬化率：[{(未硬化樣品之反應熱量)-(於110℃下加熱20分鐘而熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)=9.1(%)
樣品D-1之熱硬化率：[{(未硬化樣品之反應熱量)-(於110℃下加熱25分鐘而熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)=13.6(%)
樣品E-1之熱硬化率：[{(未硬化樣品之反應熱量)-(於110℃下加熱35分鐘而熱硬化之樣品之反應熱量)}/(未硬化樣品之反應熱量)]×100(%)=20.1(%)
再者，樣品A-1之熱硬化率為0%。
其次，將熱硬化率設為橫軸並將200℃下之黏度設為縱軸而進行繪圖。並且，針對於繪圖而獲得最小平方近似曲線。圖16係表示片狀樹脂組合物A之熱硬化率與200℃下之黏度之關係之圖表。
其後，基於上述於200℃下加熱10秒鐘後之熱硬化率之測定中所獲得之熱硬化率及上述最小平方近似曲線而算出黏度，結果成為234Pa．s。
藉此，獲得片狀樹脂組合物A之於200℃下加熱10秒鐘後之狀態下之片狀樹脂組合物於200℃下之黏度(排除了黏度測定時之升溫對熱硬化之影響的黏度)。
[焊錫流動評價]
將厚度40μm之片狀樹脂組合物A貼附於WALTS股份有限公司之測試媒劑(於厚度725μm之晶圓上形成有高度40μm之凸塊者)上。貼附條件係設為真空度：100Pa之條件下、溫度：60℃、貼附壓力：0.5Mpa。藉此，獲得如圖1所示之形態之樣品A。
(實施例1)
其次，將具有電極之安裝用基板(電極之高度：15μm)貼附於該樣品A上。貼附係使用東麗工程公司之倒裝晶片接合機(FC3000W)，貼附條件係於荷重：0.5Mpa之條件並於200℃下保持10秒鐘後，於260℃下保持10秒鐘。其後，使用X射線透視裝置(島津製作所製造「SMX-100」)觀察安裝後之焊錫接合部。將焊錫未移動之情形評價為○，將焊錫移動之情形評價為×。將結果示於表1。圖17係實施例1之樣品之X射線透視圖像。如圖17所示，實施例1中，焊錫幾乎不移動。
(比較例1)
以與實施例1相同之方式將具有電極之安裝用基板(電極之高度：15μm)貼附樣品A上。貼附係使用東麗工程公司之倒裝晶片接合機 (FC3000W)，貼附條件係於荷重：0.5Mpa之條件下並於260℃下保持10秒鐘。其後，使用X射線透視裝置(島津製作所製造「SMX-100」)觀察安裝後之焊錫接合部。將結果示於表1。圖18係比較例1之樣品之X射線透視圖像。如圖18所示，比較例1中，焊錫移動。
10‧‧‧片狀樹脂組合物
18‧‧‧凸塊
22‧‧‧半導體晶片
40‧‧‧附片狀樹脂組合物之晶片
50‧‧‧安裝用基板
52‧‧‧電極

Claims (3)

  1. 一種半導體裝置之製造方法，其特徵在於包括如下步驟：準備於半導體晶片之凸塊形成面貼附有片狀樹脂組合物之附片狀樹脂組合物的晶片之步驟A；準備形成有電極之安裝用基板之步驟B；以上述片狀樹脂組合物作為貼合面而將上述附片狀樹脂組合物之晶片貼附於上述安裝用基板上，並使形成於上述半導體晶片上之上述凸塊與形成於上述安裝用基板上之電極相對向之步驟C；於上述步驟C後，加熱上述片狀樹脂組合物而使之半硬化之步驟D；以及於上述步驟D後，於高於上述步驟D中之加熱之溫度下進行加熱，將上述凸塊與上述電極接合，並且使上述片狀組合物硬化之步驟E。
  2. 如請求項1之半導體裝置之製造方法，其中上述片狀樹脂組合物於未達200℃之溫度下之最低熔融黏度為10Pa．s~5000Pa．s之範圍內，於200℃下加熱10秒鐘後之熱硬化率為6%以上，於200℃下加熱10秒鐘後之狀態下之200℃下之黏度、即由基於安德方程式所獲得之黏度曲線而獲得之值為100Pa．s~10000Pa．s之範圍內。
  3. 如請求項1或2之半導體裝置之製造方法，其中上述步驟D係於100~230℃之範圍內進行加熱之步驟，上述步驟E係利用熔點為180~260℃之範圍內之焊錫將上述電極與上述凸塊接合之步驟，上述步驟D中之加熱溫度為低於上述焊錫之上述熔點之溫度。
TW103133087A 2013-09-25 2014-09-24 半導體裝置之製造方法 TW201517181A (zh)

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CN107481988B (zh) * 2017-07-28 2020-09-01 永道无线射频标签(扬州)有限公司 一种未使用导电胶的覆晶芯片封装产品及其制作工艺

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