TWI313481B - Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same - Google Patents

Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same Download PDF

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Publication number
TWI313481B
TWI313481B TW093107894A TW93107894A TWI313481B TW I313481 B TWI313481 B TW I313481B TW 093107894 A TW093107894 A TW 093107894A TW 93107894 A TW93107894 A TW 93107894A TW I313481 B TWI313481 B TW I313481B
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Taiwan
Prior art keywords
semiconductor device
adhesive sheet
manufacturing
component
adhesive
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TW093107894A
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Chinese (zh)
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TW200501208A (en
Inventor
Takeshi Sato
Akinori Sei
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Tomoegawa Paper Co Ltd
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Publication of TWI313481B publication Critical patent/TWI313481B/en

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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

PURPOSE: An adhesive sheet for fabricating a semiconductor device is provided to avoid a wire bonding defect, a mold flash and residual paste by fabricating a semiconductor device like QFN(quad flat non-leaded) while using an adhesive sheet. CONSTITUTION: An adhesive sheet for fabricating a semiconductor device is detachably attached to a leadframe(20) or an interconnection substrate. The adhesive sheet has a stacked body including a heat-resistant base material and an adhesive layer. The adhesive layer contains a thermoplastic resin component and a re-peeling property giving component. The adhesive layer contains a thermosetting resin component.

Description

1313481 狄、發明說明 【發明所屬之技術領域】 本發明係關於可剥離地黏貼於導線架上，適合在，迕 QFN等半導體裝置（半導體封幻之際所使料 用黏接片。 1 【先前技術】 ::來：隨著攜帶式個人電腦、行動電話等電子機器 、夕功能化，除了構成電子機器之 型化、高積體化之外，尚亦需要電子零件的 術。在此種背景之下，可高密度構震的csp(chip:=技 Ρ—，晶片尺寸型封裝)等面構裝型半導體裝置便取代 習知的卿伽咖tPackage，小型方塊平面封裳更)取代 S0p(smau 〇utiine Paekage，小外型封裝則邊構裝型半1313481 Di, invention description [Technical field of the invention] The present invention relates to a releasable adhesion to a lead frame, and is suitable for use in a semiconductor device such as 迕QFN (a semiconductor bonding device for bonding materials. 1 [Previous Technology] :: Come: With the electronic devices such as portable personal computers and mobile phones, and the functionalization of the evening, in addition to the formation and integration of electronic devices, electronic components are also needed. Under the high-density structure of the csp (chip: = technology - wafer size package) and other surface-mounted semiconductor devices will replace the conventional Qing Gai tPackage, small square plane seals and more) replace S0p ( Smau 〇utiine Paekage, small form factor package

導體裝置，而曰益受到矚目。此外，在C QFN(QuadFIatN〇n_Ieaded，無引腳寺： 採用習知的半導體裝置製Mm扁千封々，因為可 装置衣每技術進行製造，因而主要摘田 於1 00針腳以τ之較少端子型 習…之製造方法已知概略;:方下:;法。 f先，在黏接片黏貼步驟甲’於導 貼著黏接片，其次在晶妞为^士 r 面上勘 人在曰日粒黏結（dIeattach)步驟中 术上複數形成的半導體元件搭載部晶粒座、線 分別搭載著1C晶片等半導體元件。 pad部）上， 中，將沿導線架之各個半導體元件 7接口步驟 數引線、與半導體元件，利用引線接合而電11:配::複 315674 5 1313481 =樹脂封裝步驟中’利㈣裝樹脂將導線架上所搭載的半 導體兀件μ封裝，然彳4，在黏接片剝離步 導線架上剝離黏垃^ & 稽田攸Conductor devices, and the benefits are noticed. In addition, in C QFN (QuadFIatN〇n_Ieaded, no-pin temple: Mm flat-season made by a conventional semiconductor device, because the device can be manufactured per technology, it is mainly used to pick up the field at 100 stitches with less τ The manufacturing method of the terminal type is known as follows::Fangxia:;F. First, in the bonding step of the adhesive sheet, the adhesive sheet is attached to the guide, and the second is in the face of the crystal girl. In the step of the dIeattach step, a semiconductor element such as a 1C chip is mounted on each of the die pad and the line formed by the above-mentioned plurality of semiconductor element mounting portions. The pad portion) is connected to each semiconductor element 7 along the lead frame. Number of leads, and semiconductor components, by wire bonding, 11: with: 315674 5 1313481 = resin packaging step, 'four (4) resin packaged semiconductor device mounted on the lead frame μ, then 4, in the sticky Peel stripping step on the lead frame peeling adhesive ^ &

〇〇 = .接片，便可形成排列著複數QFN的QFN 早兀最後’在切割步驟中，藉由將此QFN單元沿各個 QFN外：進行切割，便可同時製造複數個QFN。 此衣去中所使用黏接片的黏接劑’一般為環 /NBR系黏接杳,丨、十&么β , 曰 或夕糸黏接劑（譬如參照日本專利特開平 6-1 81227號公報）。 符開十 夕系黏接劑則有引線接合性偏低，且容易發生 杈溢料的問題。 】因'^ ’一般在引線接合前便利用施行電漿清洗（plasma c eaning)’去除附著於表面上的雜質，俾提昇引線接合性。 此時’黏接片之黏接劑層露出面將因電聚清洗而粗縫化， 方:黏接片再剝離之時，在半導體封裝之連接端子、塑模樹 脂面上有時發生黏接劑移動（以下稱「殘糊」）現象。當發 生此種殘糊現象之時’因為在塑模樹脂、及其附近的引線 外部連接料料上附著黏接劑，因而當料製造的半導 ，裝置構裝於配線基板等之際，恐將發生連接不良狀況。 【發明内容】 a本土明乃為解決上述問題而所創新，其目的在於提供 虽使用於QFN等半導體t置之製造時，可在維持著良好的 弓丨線接合性、避免模溢料特性，且可防止殘糊現象，以防 上止半導體裝置不良品化的半導體裝置製造用黏接片、使用 5亥黏接片之半導體裴置及其製造方法。 315674 6 1313481 本發明的半導體裝置製造用黏接片（以下簡稱「黏接 片」），係在耐熱性基材之其中一面上積層著黏接劑層，並 可剝離地黏貼於導線架或配線基板上，其中，上述黏接劑 層係在熱硬化性樹脂成分（a)與熱可塑性樹脂成分（b)的混 合物，或者在單獨的熱可塑性樹脂成分（b)中，再混合著再 剝離性賦與成分（C)。 最好’再剝離性賦與成分（c)系矽油。 再者，再剝離性賦與成分（c)最好具有反應性，並與熱 可塑性樹脂成分(b)，或者與熱硬化性樹脂成分⑷及熱可塑 性樹脂成分（b)的混合物形成化學性鍵結狀態。 黏貼於銅或鍍金之銅上之黏接片，最好是在硬化後在 1 50至200 C中之剝離力係〇 〇3至5N/cm者。 黏著劑層最好係由再剝離性賦與成分（c )、熱硬化性樹 脂成分⑷、及熱可塑性樹脂成分⑼的混合物成膜而構成， 或者再剝離性賦與成分⑷最好成膜於，由熱硬化性樹脂成 分（a)與熱可塑性樹脂成分（b)所構成的黏接劑層表面上。 黏接劑層之熱硬化性樹脂成分⑷與熱可塑性樹脂成 分（b)的重量比率⑷/(b)最好在Μ以下，（⑷+ (b))/⑷最好 為6至2,000者。 熱可塑性樹脂成分⑻之重量平均分子量最好為2,〇〇〇 至 1,000,000 者。 黏接劑層之硬化後的儲存彈性率，最好以在150至250 °C中為IMPa以上者。 耐熱性基材之玻璃轉化溫度最好在丨5〇t以上，且係 315674 7 1313481 以熱膨脹係數5至50ppm/t：的耐熱性樹脂膜，或熱膨脹係 數5至50ppm/°C的金屬箔為佳。 在黏接劑層單面上最好設置保護膜者。 在貼合於銅或鍍金之銅之際的黏接強度最好為 0.098N/cm 以上者。 本發明的半導體裝置係採用上述半導體裝置製造用黏 接片而製造者。 本發明的半導體裝置之製造方法，係採用上述半導體 裝置製造用黏接片進行製造者。 【實施方式】 以下詳述本發明。 本發明之黏接片係在耐熱性基材的其中一面上，具備 有熱可塑性樹脂成分⑻、或更含有熱硬化性樹脂成分⑷、 與再剝離性賦與成分（c)的黏接劑層而構成。 耐熱性基材係可舉例如：耐熱性樹脂膜、或金屬箱等。 當採用本發明之黏接劑層，製造qfn等半導體裝置之 際，黏接片係在晶片黏結步驟、引線接合步驟、樹脂封裝 步驟中，曝於15〇i25(rc的高溫中。當耐熱性基材採用 对熱性樹脂膜時，因為該耐熱性樹脂臈的熱膨脹係數將I 遽增加至玻璃轉化溫度叫以上1擴大與金屬製導線^ 間的熱膨脹差，因而當返回室溫之際，耐熱性樹脂膜盥導 線架恐將發生輕曲現象。因&’當耐熱性樹脂膜與導線竿 發生_ ’在樹脂封裝步驟中’便無法將導線架安褒於 核具的定位針腳上，恐將引起位置偏移的不良情況。 315674 8 1313481 所以，當耐熱性基材採用耐熱性樹脂膜時，最好為破 螭轉化溫度1 50 C以上的耐熱性樹脂膜，尤以！ 8〇艽以: 為佳。 上者 再者，因為與金屬製導線架間之熱膨脹差越小越好， 因而耐熱性樹脂膜在150至250t中的熱膨脹係數，最好 為5至50ppm/t：，尤以1〇至3〇ppm/t：者為佳。 具有相關特性的耐熱性樹脂膜可例示由如··聚醯亞 胺、聚醯胺、聚醚楓、《苯硫醚、聚醚酮、$醚醚酮、三 乙醯纖維素、聚醚醯亞胺等所構成的薄膜。 — 士再者’當耐熱性基材採用金屬_時，因為如同耐熱性 樹脂膜之理由，因而金屬以15()至25代中的熱膨服係 數’最好為5至50ppmrc者，尤以1〇至3〇ppmrc者為佳。 可例示由金屬為如··金、銀、銅、白金、紹、鎂、鈦、鉻、 錳鐵銘、鎳、鋅、把、鎖、姻、锡、&所構成的羯； 或以該等金屬為主成分的合金箱；或者該等的鑛金屬结。 再者’當採用本發明之黏接片製造半導體裝置之際，為防 止黏接片剝離步驟中發生殘糊現象，耐熱性基材與黏接劑 層間之黏接強度Sa、及封裝樹脂和導線架與黏接劑層間之 =接強度Sb的比（黏接強度比）Sa/Sb，最好在】$以上者。 ^ 低方、1 ·5之情況時，因為在黏接片剝離步驟中較 谷易电生殘糊情況’因而最好避免。此外，為將黏接強度 比Sa/Sb °又定在1.5以上’當在财熱性樹脂膜時，最好在 t成黏接劑層之前’便預先對而寸熱性樹脂膜形成黏接劑層 之側表面’施行電暈處理、t浆處理、底層塗漆處理、噴 315674 9 1313481 砂等，提高耐熱性樹脂膜與黏接劑層間之黏接強度sa的處 理。另外，當金屬箱時’從製法中雖可區分軋延金屬落與 電解金屬肖，但是為將黏接強度比Sa/sb設在i 5以上， 最好採用電解金屬肖’同時在經粗面化側的面上設置黏接 劑層俾進行調整。而且’電解金屬笛+，亦是以採用電解 銅箔者為佳。 再者，由黏接劑層、與銅（或鍍金之銅）所構成導線架， f溫度在15〇至20(rc時，黏接劑層與導線架的點接強度 最好在0.098N/cm以上者。此乃當在〇 〇98Ν—以上時， 可說是可充分防止模溢料性能。 黏接劑層係以熱可塑性樹脂成分⑻與再剝離性賦與 成分⑷為必要成 >，最好更含有熱硬化性樹月旨成分⑷。此 二况下’熱硬化性樹脂成分⑷與熱可塑性樹脂成分⑼的重 置比⑷/(b) ’最好在3.5以下，尤其，（a)/(b)以0.3至3·5 為佳丄又以〇·3至2·5為更佳，更以1 S 2.5為特佳。 田U)/(b)大於3.5時，因為黏接劑層可撓性降低，因 此經過電聚清洗步驟之具黏接片導線架，在樹脂封裝步驟 中黏接片的黏接力降低，導致導線架與黏接片部分剝離 而發生模溢料，而且亦較容易發生殘糊狀況。反之，若（a)/(b) 2於0.3時，將因彈性率的降低，而隨之易於發生引線接 合不良現象，因而最好避免。 钻接劑層成分的熱硬化性樹脂成分（a)與熱可塑性樹 月曰成分（b)之混合物或者，單獨僅有熱可塑性樹脂成分（b) 及再剝離性賦與成分（c)間之重量比（（a)+(b))/(c)(或 315674 10 1313481 (b))/(c)) ’ 最好為 6 至 2,000 者。尤以（（a) + (b))/(c)或（b)/(c) 為10至1,000為更佳。 當（U) + (b))/(c)或（b)/(c)低於6時，因為導線架與黏接 片間之黏接力降低，因而在樹脂封裝步驟中，導致導線架 與黏接片產生部分剝離而發生模溢料，而且亦較容易發生 殘糊狀況。反之’若大於2,〇〇〇時， 若使用經電漿清洗步驟之具黏接片導線架時，因為導線架 與黏接片間之黏接力增加’因而在將半導體製造用黏接片 再剝離之際，將容易發生殘糊現象。 黏接劑層成分若含適量之熱硬化性樹脂成分時，將 可提汁引線接合性，改善模溢料特性。熱硬化性樹脂成分 (a)可例示如：脲樹脂、三聚氰胺樹脂、苯代三聚氰胺樹脂、 曱基胍胺樹脂、苯酚樹脂、間苯二酚樹脂、二甲苯樹脂、 呋喃樹脂、不飽和聚酯樹脂、鄰苯二甲酸二烯丙酯樹脂、 異氰酸酯樹脂、環氧樹脂、馬來醯亞胺樹脂、靛酚醯亞胺 (nadimide)樹脂等。另夕卜’該等樹脂可單獨使用亦可人 併2種以上使用…’特別以藉由至少含有環氧樹脂盘 苯盼樹脂中之1種，將可獲得在引線接合步驟的處理溫度 下具有祕率’而且在樹脂封裝步驟的處理溫度下，能 與導線架間呈現較高黏接強度的黏接劑層，因而較件。 熱可塑性樹脂成分（b)可舉例如：丙稀膳_ 丁二Μ聚 物（NBR)、㈣腈了： 樹脂（abs)、苯 -丁二稀-笨乙烯樹脂（SEBS)、苯乙稀 “碑乙坤 (SBS)、聚丁二烯、聚丙烯腈 ’ $乙烯樹脂 ♦乙烯醇縮丁醛、聚醯胺、 315674 11 1313481 聚酿胺醯亞胺、聚醯亞胺m旨、聚胺s旨、聚二甲基石夕氧 烷等其中，特別以具醯胺鍵結的聚醯胺、聚醯胺醯亞胺、 聚丙烯腈-丁二烯共聚物樹脂具優越耐熱性，因而較佳。 再者，熱可塑性樹脂成分（b)之重量平均分子量係 2’〇〇〇 至 1’〇〇〇,〇〇〇’ 最好為 5 〇〇〇 至綱，〇〇〇,尤以 I。，。。。 ^ 500,000為佳。若在此範圍内便可提高黏接劑層的凝 咸力可更加防止在黏接片剝離步驟中發生殘糊現象。 再剝離性賦與成分⑷有如：石夕油、改質石夕油。石夕油可 舉例如.i甲基聚⑪氧燒型、甲基氫二烯聚⑦氧烧型、甲 J苯基聚石夕氧烷型等。改質石夕油則在反應性石夕油方面，可 舉例如：胺改質型、環氧改質型、緩改質型、甲醇改質型、 Ιί丙婦酸改質型、硫醇改質型、苯酴改質型，而在非反 應性石夕油方面，可嚴彳丨4 了牛例如·聚醚改質型、甲基苯乙烯改質 曳、烷改質型、脂肪酸酯改質型、 ^ 、 笙„„ 貝玉烷虱改質型、氟改蜇型 另卜，該等㈣可單獨使用，亦可併用2種以上’。… 其中，特別以反應性梦油藉由與熱可塑性樹脂成 或熱硬化性樹脂成分、盘跑1 () 从 u 成刀（）與熱可塑性樹脂成分（b)之混合 物，形成化學鍵結狀態，便可 封裝體，因而最佳。 、再_時不致切油移往 再者，為調整黏接劑層的熱膨 黏性、黏接性等，最好在 …得羊表面 甘士 . 】層中添加無機或有基填料。 ”中，無機填料可例示如由：粉 / 砍、氧化紹、氧化鈦、氧化鈹、氧化广V型氧化 氮化矽、硼化鈦、氮化硼、氮 氮化鈦、 孔化鎢、碳化石夕、碳化鈦、碳 315674 12 1313481 化錯、碳化翻、雲母、氧化辞、碳黑 '氣氧化紹、氨氧化 約、氫氧化鎖、三化錄等所構成之填料、或在該等表面上 經導入三甲基魏烧基等者。此外，有機填料可例示由如： 聚醯亞胺、聚醯胺醯亞胺、聚㈣啊、㈣酿亞胺、㈣ 醯亞胺、尼龍、矽樹脂等所構成之填料。 為製造半導體封裝的樹脂封裝步驟，乃一邊加熱至 150至20(TC，一邊施加5至1〇〇Gpa|力，利用對半導體 2進行樹脂封裝而封裝。為此，黏接片之黏接劑層曝於 局溫中的結果’黏接劑層之黏接力（黏接劑層與導線架間之 «Μ清低’隨封裝樹脂的塵力’黏接劑層若由導線架 4刀地剝離而發生模溢料時，由於採用本發明黏接劑層的 ㈣㈣層之黏接力不易降低，不易發生模溢料 之情況。 在耐熱性基材之其中一面上形成黏接劑層的方法，可 用如·.在耐熱性基材上直接塗布黏接劑，並乾燥的洗合法 stlng) ’或者先將黏接劑塗布於脫模性膜上 再轉印於耐埶 、、礼森设 化性樹積層法等。另外’最好使用熱硬 八 刀、熱可塑性樹脂成分（b)、再剝離性賦斑成 =族=目對於有機溶劑（如：甲苯、二甲苯、氣化苯等 方管族系溶劑.石 二甲基曱酿胺二甲乙酮、曱基異丁酮㈣溶劑； 系極性溶劑.四土乙^胺、Ν_甲基吼钱綱等非質子 ，四虱呋喃等之單獨或混合物），溶解i重量％〇〇 = . The film can form a QFN with a complex QFN. Finally, in the cutting step, by cutting the QFN unit along each QFN: a plurality of QFNs can be simultaneously manufactured. The adhesive for the adhesive sheet used in this garment is generally a ring/NBR adhesive, 丨, 十 & β, 曰 or 糸 糸 adhesive (see, for example, Japanese Patent Laid-Open No. 6-1 81227) Bulletin). The adhesive-bonding agent has a low wire bonding property and is prone to the problem of smashing. 】 Because '^' is generally used to perform plasma cleaning (plasma c eaning) to remove impurities adhering to the surface, and to improve wire bonding. At this time, the exposed surface of the adhesive layer of the adhesive sheet will be coarsely sewn by the electropolymer cleaning. When the adhesive sheet is peeled off, the bonding is sometimes performed on the connection terminal of the semiconductor package or the mold resin surface. Agent movement (hereinafter referred to as "residual paste") phenomenon. When such a paste phenomenon occurs, 'because the adhesive is adhered to the mold-attached material on the outside of the lead resin, and the material is semiconducting, the device is mounted on the wiring board, etc. A connection failure condition will occur. SUMMARY OF THE INVENTION A local innovation has been innovated to solve the above problems, and an object thereof is to provide a good bow-and-wire bonding property and a mold overflow-free property when used for manufacturing a semiconductor such as QFN. Further, it is possible to prevent the pasting phenomenon, prevent the semiconductor device from being used for the semiconductor device from being defective, and the semiconductor device for manufacturing the semiconductor device and the method for manufacturing the same. 315674 6 1313481 The adhesive sheet for manufacturing a semiconductor device of the present invention (hereinafter referred to as "adhesive sheet") is formed by laminating an adhesive layer on one surface of a heat-resistant substrate and peelingly adhering to a lead frame or wiring. In the substrate, the adhesive layer is a mixture of the thermosetting resin component (a) and the thermoplastic resin component (b), or in a separate thermoplastic resin component (b), and is further re-peelable. Assign component (C). Preferably, the re-peelability imparting component (c) is an emu oil. Further, the re-peelability imparting component (c) is preferably reactive and forms a chemical bond with the thermoplastic resin component (b) or the mixture of the thermosetting resin component (4) and the thermoplastic resin component (b). Knot state. The bonding sheet adhered to copper or gold-plated copper is preferably a peeling force of 〇3 to 5 N/cm in the range of 150 to 200 C after hardening. The adhesive layer is preferably formed by forming a mixture of the re-peelability-imparting component (c), the thermosetting resin component (4), and the thermoplastic resin component (9), or the re-peelability-imparting component (4) is preferably formed into a film. The surface of the adhesive layer composed of the thermosetting resin component (a) and the thermoplastic resin component (b). The weight ratio (4)/(b) of the thermosetting resin component (4) and the thermoplastic resin component (b) of the adhesive layer is preferably Μ or less, and ((4) + (b)) / (4) is preferably 6 to 2,000. The thermoplastic resin component (8) preferably has a weight average molecular weight of 2, 〇〇〇 to 1,000,000. The storage elastic modulus after hardening of the adhesive layer is preferably at least 1 MPa in the range of 150 to 250 °C. The glass transition temperature of the heat resistant substrate is preferably 丨5〇t or more, and is 315674 7 1313481, a heat resistant resin film having a thermal expansion coefficient of 5 to 50 ppm/t: or a metal foil having a thermal expansion coefficient of 5 to 50 ppm/° C. good. It is preferable to provide a protective film on one side of the adhesive layer. The bonding strength at the time of bonding to copper or gold-plated copper is preferably 0.098 N/cm or more. The semiconductor device of the present invention is manufactured by using the above-mentioned adhesive sheet for semiconductor device manufacturing. The method of manufacturing a semiconductor device of the present invention is carried out by using the above-mentioned adhesive sheet for manufacturing a semiconductor device. [Embodiment] The present invention will be described in detail below. The adhesive sheet of the present invention comprises a thermoplastic resin component (8), or a thermosetting resin component (4), and an adhesive layer of the re-peelability-imparting component (c) on one side of the heat-resistant substrate. And constitute. The heat resistant substrate may, for example, be a heat resistant resin film or a metal case. When the adhesive layer of the present invention is used to manufacture a semiconductor device such as qfn, the bonding sheet is exposed to a high temperature of 15 〇i25 (rc) in the wafer bonding step, the wire bonding step, and the resin packaging step. When the base material is a heat-resistant resin film, since the thermal expansion coefficient of the heat-resistant resin 将 increases I 遽 to a glass transition temperature, the thermal expansion difference between the above 1 and the metal wire is increased, and thus heat resistance is returned when returning to room temperature. The resin film 盥 lead frame is likely to be buckling. Because the heat-resistant resin film and the wire 竿 _ 'in the resin packaging step' can not be placed on the positioning pins of the nuclear device, fear 315674 8 1313481 Therefore, when the heat-resistant substrate is made of a heat-resistant resin film, it is preferable to use a heat-resistant resin film having a breaking temperature of 1 50 C or more, especially 8: In addition, the thermal expansion coefficient of the heat resistant resin film in the range of 150 to 250 t is preferably 5 to 50 ppm/t: especially 1 because the difference in thermal expansion between the lead frame and the metal lead frame is as small as possible. 〇 to 3〇ppm /t: It is preferable. The heat resistant resin film having the relevant characteristics can be exemplified by, for example, polyimine, polyamine, polyether maple, "phenylene sulfide, polyether ketone, ether ether ketone, triethyl ethane A film composed of cerium cellulose, polyether sulfimine, etc. — When the heat-resistant substrate is made of metal _, the metal is in the 15 () to 25 generations because of the reason of the heat-resistant resin film. The coefficient of thermal expansion is preferably 5 to 50 ppmrc, especially 1 to 3 ppm rc. It can be exemplified by metals such as gold, silver, copper, platinum, samarium, magnesium, titanium, chromium, manganese. a metal box composed of iron, nickel, zinc, handle, lock, marriage, tin, & or an alloy box containing the metals as the main component; or such a mineral metal knot. When the bonding device is used to manufacture a semiconductor device, in order to prevent the occurrence of residual paste in the peeling step of the adhesive sheet, the bonding strength Sa between the heat-resistant substrate and the adhesive layer, and between the sealing resin and the lead frame and the adhesive layer are The ratio of the strength Sb (bonding strength ratio) Sa/Sb is preferably at least $. ^ In the case of low squares, 1 · 5, because it is sticky In the peeling step of the film, it is better to avoid the situation of the residue. In addition, in order to set the bonding strength ratio Sa/Sb ° to 1.5 or more, when it is in the heat-sensitive resin film, it is better to stick to t. Before the adhesive layer, the side surface of the adhesive layer formed by the heat-sensitive resin film is subjected to corona treatment, t-pulp treatment, primer coating treatment, spray 315674 9 1313481 sand, etc., to improve the heat-resistant resin film and adhesion. The treatment of the bonding strength sa between the bonding layers. In addition, in the case of the metal case, the rolling metal drop and the electrolytic metal can be distinguished from the manufacturing process, but the bonding strength ratio Sa/sb is set at i 5 or more, It is preferable to use an electrolytic metal sap while adjusting the layer on the surface of the roughened side. Moreover, 'electrolytic metal flute+ is also preferred to use electrolytic copper foil. Furthermore, the lead frame composed of the adhesive layer and copper (or gold-plated copper), f temperature is 15 〇 to 20 (rc, the bonding strength of the adhesive layer and the lead frame is preferably 0.098 N / More than cm, this is when the 〇〇98Ν- or more, it can be said that the mold overflow performance can be sufficiently prevented. The adhesive layer is made of thermoplastic resin component (8) and re-peelability imparting component (4). It is preferable to further contain a thermosetting tree component (4). In these two cases, the reset ratio (4)/(b) of the thermosetting resin component (4) and the thermoplastic resin component (9) is preferably 3.5 or less, in particular, a)/(b) is preferably from 0.3 to 3.5, and preferably from 33 to 2.5, and more preferably 1 S 2.5. Field U)/(b) is greater than 3.5 because of stickiness The adhesive layer has a reduced flexibility, so that the adhesive sheet lead frame is subjected to the electro-poly cleaning step, and the adhesive force of the adhesive sheet is reduced in the resin packaging step, which causes the lead frame and the adhesive sheet to be partially peeled off, and the mold overflow occurs. It is also more prone to remnant conditions. On the other hand, if (a)/(b) 2 is at 0.3, the elastic modulus is lowered, and the wire bonding failure is liable to occur, so that it is preferably avoided. a mixture of the thermosetting resin component (a) of the drill layer component and the thermoplastic tree component (b) or only the thermoplastic resin component (b) and the re-peelability component (c) The weight ratio ((a) + (b)) / (c) (or 315674 10 1313481 (b)) / (c)) ' is preferably from 6 to 2,000. Especially ((a) + (b)) / (c) or (b) / (c) is preferably from 10 to 1,000. When (U) + (b)) / (c) or (b) / (c) is lower than 6, since the adhesion between the lead frame and the bonding sheet is lowered, the lead frame is caused in the resin packaging step. The adhesive sheet is partially peeled off to cause mold overflow, and is also prone to residual paste. On the other hand, if it is greater than 2, if the electrode holder is used in the plasma cleaning step, the adhesion between the lead frame and the bonding sheet is increased, so the bonding sheet for semiconductor manufacturing is used again. When peeling off, it will be prone to remnants. When an appropriate amount of the thermosetting resin component is contained in the adhesive layer component, the wire bonding property can be improved and the die overflow property can be improved. The thermosetting resin component (a) can be exemplified by, for example, a urea resin, a melamine resin, a benzoguanamine resin, a mercaptophthalamide resin, a phenol resin, a resorcin resin, a xylene resin, a furan resin, or an unsaturated polyester resin. , diallyl phthalate resin, isocyanate resin, epoxy resin, maleimide resin, nadimide resin, and the like. In addition, the resins may be used singly or in combination of two or more kinds. In particular, by using at least one of epoxy resin phenylene resins, it is possible to obtain at the processing temperature of the wire bonding step. The secret rate 'and at the processing temperature of the resin encapsulation step, can present a higher adhesion strength between the lead frame and the adhesive layer. The thermoplastic resin component (b) may, for example, be a propylene dibutyl phthalate (NBR) or (iv) a nitrile: a resin (abs), a benzene-butadiene-stact ethylene resin (SEBS), or a styrene.碑乙坤 (SBS), polybutadiene, polyacrylonitrile '$vinyl resin ♦ vinyl butyral, polyamine, 315674 11 1313481 polyaminimide, polyimine, m, polyamine Among them, polydimethyl oxa aurethane and the like, particularly, a polyamide-bonded polyamine, a polyamidoximine, and a polyacrylonitrile-butadiene copolymer resin have superior heat resistance, and thus are preferred. Further, the thermoplastic resin component (b) has a weight average molecular weight of 2' 〇〇〇 to 1' 〇〇〇, and 〇〇〇' is preferably 5 Å to 纲, especially I. , . . . 500,000 is better. If the viscosity of the adhesive layer is increased within this range, the sticking phenomenon in the peeling step of the adhesive sheet can be further prevented. The peeling imparting component (4) is like: stone Xiyue oil, modified Shixia oil. For example, the .X methyl poly 11 Oxygen type, methyl hydrogen diene poly 7 Oxygen type, J J phenyl polyoxane type, etc. The modified Shixia oil is in the case of reactive Shixia oil, for example, amine modified type, epoxy modified type, slowly modified type, methanol modified type, Ιί-futosan acid modified type, mercaptan modified Qualitative, benzoquinone modified, and in the case of non-reactive Shixia oil, can be modified, such as polyether modified, methyl styrene modified, alkane modified, fatty acid ester Modification type, ^, 笙 „„ Beyzan 虱 虱 虱 、 、 、 、 、 、 、 、 、 、 , , , , , , , , 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 , , , , It is preferable to form a chemical bonding state with a thermoplastic resin or a thermosetting resin component, and a mixture of a knife (1) and a thermoplastic resin component (b). _ When the _ does not cut the oil to move again, in order to adjust the thermal expansion and adhesion of the adhesive layer, adhesion, etc., it is best to add an inorganic or organic filler to the surface of the sheep. 】 The inorganic filler can be exemplified by: powder / chopped, oxidized, titanium oxide, cerium oxide, oxidized broad V-type cerium oxynitride, titanium boride, Boron, titanium oxynitride, tungsten carbide, carbon carbide, titanium carbide, carbon 315674 12 1313481 fault, carbonization, mica, oxidation, carbon black 'gas oxidation, ammonia oxidation, hydration lock, three A filler composed of a chemical recording or the like, or a trimethyl Weiwei group or the like introduced onto the surfaces. Further, the organic filler may be exemplified by a filler composed of, for example, polyimine, polyamidimide, poly(tetra), (iv)imine, (tetra)imine, nylon, anthracene resin or the like. The resin encapsulation step for manufacturing a semiconductor package is performed by heating to 150 to 20 (TC, while applying a force of 5 to 1 〇〇Gpa|, and encapsulating the semiconductor 2 by resin encapsulation. For this, the adhesive for the bonding sheet The result of exposure of the layer to the local temperature is the adhesion of the adhesive layer (the dust between the adhesive layer and the lead frame is reduced with the dust of the encapsulating resin.) The adhesive layer is peeled off by the lead frame 4 When the mold overflow occurs, the bonding force of the (four) (four) layer of the adhesive layer of the present invention is not easily reduced, and the mold overflow is less likely to occur. A method of forming an adhesive layer on one side of the heat resistant substrate is available. For example, apply the adhesive directly on the heat-resistant substrate, and dry the washing method. Or apply the adhesive to the release film first and then transfer it to the sputum-resistant, ritual tree. Lamination method, etc. In addition, it is best to use hot hard eight-knife, thermoplastic resin component (b), re-peeling speckle formation = family = target for organic solvents (such as toluene, xylene, gasification benzene, etc. Solvent. Stone dimethyl hydrazine amine dimethyl ethyl ketone, decyl isobutyl ketone (tetra) solvent Polar solvents. Soil B ^ four amine, Ν_ methyl roar Qian Gang aprotic, four lice furan, alone or in a mixture), was dissolved i wt%

Μ上，最好5舌旦 王里’U $ %以上，而所形成的黏接劑塗布液。 4接劑層除利用再剝離性賦與成分⑷、與熱可塑性樹 315674 13 1313481 脂成分（b)(或更加入熱硬化性才封脂成分（c))調製混合物 將此混合物進行成膜之外，亦可 ^ π 了利用熱可塑性樹脂成分 =或更加人熱硬化性職成分⑷)形成黏接劑層，然後在 其表面上將再剝離性賦與成分（c) 接劑芦。告再制雜^ v進仃成膜，使整體形成黏 接㈣《再剝離性賦與成分⑷較後成 ㈣成混合物之情況下，少量的再剝離性職與成：⑷:用先 量便可獲得再剝離性功能，因而較佳。 、 =發明黏接片的黏接劑層上，亦可點貼可剝離的保護 ;，=:行半導體裝置製造之前，才剝離保護膜的構 此情況下’可防止在黏接片製成後至要❹為止 間内，黏接劑層遭受損傷。保護膜僅要具有脫模性者即可’， 可採用任㈣膜:譬如：聚醋、聚乙焊、聚丙稀、聚對苯 一甲酸乙一酯等薄膜，或者將該等薄 氟化合物施行脫模處理的薄膜等。 1矽樹知或 再者’在⑽至2抓之全部溫度範圍中， 硬化後的儲存彈性率係聰3以上，最好iQMpa以上^ 以50MPa以上者為佳。另外，此處所謂「硬化後」，係指 切：步驟中’經加熱處理狀態下的黏接劑層 性率之測定條件等，容實施例中再說明。在為製造半導L 封裝的引線接合步驟中，為能採用焊㈣線將半導體^ 與導線架耦接’便將該桿接引線二端加熱至150至250t， 並利用⑽至12GkHz超音波施行炼接，此時在導線架 方的黏接片之黏接劑層，將被曝於經上述加熱的高溫下， 造满性化，容易吸收超音波’其結果導線架因振動而 315674 14 1313481 谷易發生引線接合不良現象，但是由具上述儲存彈性率之 黏接劑層所構成之本發明黏接片，便不易發生如上述問 題。為將儲存彈性率設定在mPa以上，譬如僅要熱硬化 性樹脂成分⑷/熱可塑性樹脂成分（b)重量比，調整為W 以上即可。 黏貼於銅或鍍金之銅上的黏接片在硬化後，於1 5 〇至 2〇〇°C巾的剝離力最好為〇 〇3至谓⑽。若剝離力低於On the sputum, it is best to use 5 adhesives to form the adhesive coating solution. 4 The adhesive layer is formed into a film by using a re-peelability imparting component (4), and a thermoplastic compound 315674 13 1313481 fat component (b) (or a thermosetting curable component (c)) to prepare a mixture. Alternatively, the adhesive layer may be formed by using a thermoplastic resin component = or a more thermosetting component (4), and then the re-peelability may be imparted to the component (c) on the surface thereof. Re-production of miscellaneous ^ v into the film into the film, so that the overall formation of bonding (four) "re-peeling imparting ingredients (4) compared to the later into (four) into a mixture, a small amount of re-peeling job and into: (4): with the first amount It is preferred to obtain a re-peelability function. , = on the adhesive layer of the invention, or the peelable protection; ==: before the manufacture of the semiconductor device, the structure of the protective film is peeled off, which can prevent the adhesive sheet from being formed. The adhesive layer is damaged during the period until the last time. The protective film only needs to have mold release property, and any (four) film: for example, a film such as polyester, polyethylene, polypropylene, or ethyl p-benzoate, or the thin fluorine compound can be taken off. Molded film, etc. 1 矽树知或再者' In all temperature ranges of (10) to 2, the storage elastic modulus after hardening is more than 3, preferably iQMpa or more ^ 50 MPa or more. Here, the term "after hardening" means the measurement conditions of the adhesive layer ratio in the heat-treated state in the step, and the description will be made in the examples. In the wire bonding step for fabricating a semi-conductive L package, in order to be able to couple the semiconductor and the lead frame by soldering (four) wires, the rod ends are heated to 150 to 250 t and subjected to (10) to 12 GkHz ultrasonic waves. Refining, at this time, the adhesive layer of the bonding piece on the lead frame side will be exposed to the high temperature of the above heating, fullness, and easy to absorb the ultrasonic wave. The result lead frame is vibrated by the 315674 14 1313481 valley. The wire bonding defect is liable to occur, but the bonding sheet of the present invention comprising the adhesive layer having the above storage elastic modulus is less likely to cause the above problems. In order to set the storage elastic modulus to mPa or more, for example, only the thermosetting resin component (4)/thermoplastic resin component (b) weight ratio may be adjusted to W or more. After the adhesive sheet adhered to the copper or gold-plated copper is hardened, the peeling force of the towel at 15 〇 to 2 ° ° C is preferably 〇 至 3 to (10). If the peel force is lower than

0.03N/cm時，將因逢王拉七卞。 ，，L 守口黏接力不足，造成在塑模樹脂封裝時發 生板溢料的不佳狀況。反之，^超過5N/em時，在剝離時 將發生黏接片破損等不良狀況，導致難以進行剝離。 (半導體裝置之製造方法） 其次’參照第1圖、第2A至2F圊’針對採用本發明 黏接片’製造半導體裝置之方法—例進行說明。以下便以 製造半導體裝置為QFN時之例子進行說明。 首先準備第1圖所示概略構造的導線架2 (^導 係具備有搭載著IC晶片等半導體元件的島狀複數半導 K牛搭載部（晶粒座部）21，沿各個半導體元件搭载部21 外周配設多數引線22。其次，如第2A圖所示，在黏接片 黏接步驟中，於導線架20其中一面上，將本發明黏接片 10黏貼呈黏接劑層（未圖式）側為導線架20側的㈣。 再者，將黏接片10黏貼於導線架2〇上的方法 為積層法等。 f /、人如第2B圖所不，在晶片黏結步驟中，在 架⑼之半導體元件搭載部21上，從未黏貼著黏接片二 315674 15 1313481 側，採用晶片黏結材（未圖式）搭載著Ic晶片等半導體元件 30 ° 其次’為防止因引線接合之前的加熱歷程而造成從黏 接片、或晶片黏結劑等所發生的排氣成分附著於導線架 上，而導致因引線接合不良使良率降低，因此在施行引線 接合步驟之前’便對黏接片、晶片黏結劑、搭載著ic晶片 的導線架施行電漿清洗。 其次，如第2C圖所示，在引線接合步驟中，將半導 體元件30、與導線架2G之引線22，透過金絲線等焊接引 4 3 1而電性耗接。其次，如第2D圖所示，在樹脂封裝步 驟中’將第2C圖所示製造途中的半導體裝置载置於模具 内，藉由採用封裝樹脂（塑模材）施行轉移模塑（模具成型）， 便利用封裝樹脂40將半導體元件3〇封裝。 ^其次，如第2E圖所示，在黏接片剥離步驟中，從封 =樹脂40與導線帛2〇上將黏接片1〇剝離，便可形成排列 有複數QFN50的QFN單元6〇。最後，如第汀圖所示， ，切割步驟中，將QFN單元6()沿各QFN5Q外周施行切 ’便可製得複數個QFN50。 依此藉由採用本發明之黏接片1〇而製造QFN等半導 體裝置，便可在維持熱硬化型黏接劑的引線焊接性、防止 模=料性之情況下，即便該黏接片在經過電漿清洗步驟的 下，仍可防止殘糊現象，俾防止半導體裝置不良品化。 Ϊ-施例 ”人’針對本發明的實施例與比較例進行說明。 315674 16 1313481 在各實施例、比較例中，調製黏接劑而製作黏接片，並施 行所獲得黏接劑層與黏接片的評估。此外，下表1、2中的 調配比係為重量比。 直.施例1 依表1所示組成及調配比混合於四氫卩夫喃中，而製作 黏接劑溶液。其次，採用耐熱性基材的聚醯亞胺樹脂膜（東 嫘•杜邦公司（公司名，音譯）製商品名：卡布東100EN(商 品名，音譯）、厚度25μπι、玻璃轉化溫度300。(：以上、熱 膨脹係數1 6ppm/°C )，將上述黏接劑溶液在其上塗布成乾 燥後的厚度為6μπι之狀態，然後在1 2〇。(：中乾燥5分鐘， 獲得具黏接劑層的本發明黏接片。 另外’熱硬化性樹脂成分（a)/熱可塑性樹脂成分（b)重 里比為1 ·5，且（熱硬化性樹脂成分（a)+熱可塑性樹脂成分 (b))/再剝離性賦與成分（c)重量比為28.57。 實施例2 I — 除將黏接劑溶液改變為如表1所示組成與調配比之 外’其餘均如同實施例i，獲得本發明黏接片。 另外’熱硬化性樹脂成分（a)/熱可塑性樹脂成分重 里比為1 ·5 ’且（熱硬化性樹脂成分（a) +熱可塑性樹脂成分 (b))/再剝離性賦與成分（c)之重量比為33.33。 實施例\ 將熱硬化性樹脂成分（a)、熱可塑性樹脂成分（b)、及硬 化促進劑’依表1所示組成及調配比混合於四氫咲喃中， 而‘作黏接劑溶液。其次，採用耐熱性基材的聚醯亞胺樹 315674 17 1313481 脂膜（東嫘.杜邦社（公司名，音譯）製商品名：卡布東 1〇〇ΕΝ(商品名’音譯）、厚度25μηι、玻璃轉化溫度3〇〇。〇 以上、熱膨脹係數1 6PPm/°C )，將上述黏接劑溶液在其上 塗布成乾燥後的厚度為6μηι之狀態，然後在】〇〇它中乾燥 3分鐘而獲得黏接劑，之後，將再剝離性賦與成分丨重 量份稀釋於四氫呋喃5〇重量份的溶液，在黏接劑上面塗布 成表1所示調配比，然後再於12〇t中乾燥5分鐘，獲得 具有黏接劑層的本發明黏接片。 另外，熱硬化性樹脂成分（a)/熱可塑性樹脂成分（b)之 重量比為1.5。 實施例4 除將黏接劑溶液改變為如表丨所示組成與調配比之 外，其餘均如同實施例3 ,獲得本發明之黏接片。 另外，熱硬化性樹脂成分（a)/熱可塑性樹脂成分（b)之 重量比為1.5。 .實施例5 依貫施例1相同的組成與調配比，製作黏接劑溶液， ，、人知用耐熱性基材的銅箔（三井金屬礦業社製商品 名· 3EC-VLP、厚度25μιη、熱膨脹係數2〇ppm/t )，將上 述黏接劑溶液在其粗糙面上塗布成乾燥後的厚度為阼⑺之 狀心後在1 20 C中乾燥5分鐘，獲得具黏接劑層的本 發明黏接片。 賁施例6 依表1所示組成與調配比混合於N _甲基吡咯烷酮中而 315674 18 1313481 襄H ^冷/夜。其次’採用耐熱性基材的銅落（三井金肩 ，業社製商品名·· 3EC_VLP、厚度25μηι)，將上述黏接劑 溶液在其粗糙面上塗布成乾燥後的厚度為祚m之狀態，然 後在18CTC中乾燥1()分鐘，獲得具黏接劑層的本發明 片。 另卜…了塑性樹脂成分（b)/再剝離性賦與成分（e) 之重量比為33.33。 315674 19 1313481When 0.03N/cm, it will be pulled by the king. , L is insufficient in the adhesion of the gaze, resulting in a poor condition in which the board overflows during molding of the mold resin. On the other hand, when it exceeds 5 N/em, a problem such as breakage of the adhesive sheet occurs at the time of peeling, and peeling is difficult. (Manufacturing method of semiconductor device) Next, a method of manufacturing a semiconductor device using the bonding sheet of the present invention will be described with reference to Figs. 1 and 2A to 2F. Hereinafter, an example in which a semiconductor device is a QFN will be described. First, the lead frame 2 of the schematic structure shown in Fig. 1 is prepared. The system is provided with an island-shaped complex semiconductor K-mounting portion (die portion) 21 on which a semiconductor element such as an IC chip is mounted, along each semiconductor element mounting portion. 21 The outer circumference is provided with a plurality of leads 22. Secondly, as shown in FIG. 2A, in the bonding step of the bonding sheet, the bonding sheet 10 of the present invention is adhered to the adhesive layer on one side of the lead frame 20 (not shown). The side is the (4) side of the lead frame 20. Further, the method of adhering the bonding sheet 10 to the lead frame 2 is a lamination method, etc. f /, as shown in FIG. 2B, in the wafer bonding step, In the semiconductor element mounting portion 21 of the holder (9), a semiconductor element such as an Ic wafer is mounted on the side of the bonding sheet 2315674 15 1313481 without using a wafer bonding material (not shown). The heating process causes the exhaust component from the bonding sheet or the wafer bonding agent to adhere to the lead frame, and the yield is lowered due to poor wire bonding, so the bonding is performed before the wire bonding step is performed. Sheet, wafer bonding agent, carrying The lead frame of the ic wafer is subjected to plasma cleaning. Next, as shown in FIG. 2C, in the wire bonding step, the semiconductor element 30 and the lead 22 of the lead frame 2G are soldered through a gold wire or the like and electrically connected. Secondly, as shown in FIG. 2D, in the resin encapsulation step, the semiconductor device in the middle of the manufacturing process shown in FIG. 2C is placed in a mold, and transfer molding is performed by using a sealing resin (molding material). Molding), the semiconductor element 3 is conveniently packaged by the encapsulating resin 40. Next, as shown in Fig. 2E, in the bonding sheet peeling step, the bonding sheet 1 is bonded from the sealing resin 40 and the wire 2 When the crucible is peeled off, a QFN unit 6〇 in which a plurality of QFN50s are arranged can be formed. Finally, as shown in the figure, in the cutting step, the QFN unit 6() can be cut along the periphery of each QFN5Q to obtain a plurality of QFN50s. By manufacturing the semiconductor device such as QFN by using the bonding sheet 1 of the present invention, even if the bonding property of the thermosetting adhesive is maintained and the mold property is prevented, even the bonding sheet can be used. After the plasma cleaning step, the residual can still be prevented In the examples and comparative examples, the adhesives are prepared to prepare the adhesive sheets. And the evaluation of the obtained adhesive layer and the adhesive sheet is carried out. In addition, the blending ratios in the following Tables 1 and 2 are weight ratios. Straight. Example 1 The composition and the mixing ratio according to Table 1 are mixed with tetrahydrogen. Cognac is used to make a binder solution. Secondly, a polyimide film made of a heat-resistant substrate (trade name, company name: transliteration): Kabudong 100EN (trade name, Transliteration), thickness 25μπι, glass transition temperature 300. (: Above, thermal expansion coefficient (16 ppm/°C), the above-mentioned adhesive solution was applied thereon to a state of 6 μm after drying, and then at 12 Torr. (: drying in the middle for 5 minutes, obtaining the adhesive sheet of the present invention having an adhesive layer. Further, the thermosetting resin component (a)/thermoplastic resin component (b) has a weight ratio of 1.25, and (thermosetting property) The resin component (a) + thermoplastic resin component (b)) / re-peelability imparting component (c) weight ratio was 28.57. Example 2 I - except that the adhesive solution was changed to the composition and formulation shown in Table 1. In the same manner as in Example i, the adhesive sheet of the present invention is obtained. Further, the thermosetting resin component (a)/thermoplastic resin component has a weight ratio of 1 · 5 ' and (thermosetting resin component (a) + Thermoplastic Resin Component (b)) / Re-peelability-providing component (c) The weight ratio is 33.33. Example \ Thermosetting resin component (a), thermoplastic resin component (b), and hardening accelerator 'The composition and mixing ratio shown in Table 1 were mixed in tetrahydrofuran, and 'as a binder solution. Secondly, a heat-resistant substrate of polyamido tree 315674 17 1313481 lipid film (Donglu. DuPont) (Company name, transliteration) system name: Kabudong 1〇〇ΕΝ (trade name 'transliteration), thickness 25μη , glass transition temperature of 3 〇〇. 〇 above, thermal expansion coefficient of 16 PPm / ° C), the above adhesive solution is coated thereon to a dry state of 6 μηι thickness, and then dried in the 〇〇 3 3 minutes After obtaining the adhesive, the re-peelability component is diluted with a solution of 5 parts by weight of tetrahydrofuran, and the solution is applied to the adhesive as shown in Table 1, and then dried at 12 Torr. 5 minutes, the adhesive sheet of the present invention having an adhesive layer was obtained. Further, the weight ratio of the thermosetting resin component (a) / the thermoplastic resin component (b) was 1.5. Example 4 In addition to changing the adhesive solution The adhesive sheet of the present invention was obtained in the same manner as in Example 3 except for the composition and the ratio of the composition shown in Table 另外. Further, the weight ratio of the thermosetting resin component (a) / the thermoplastic resin component (b) was 1.5. Example 5 According to the same composition and mixing ratio of Example 1, the adhesive solution was prepared, and the copper foil of the heat-resistant substrate was known (manufactured by Mitsui Mining and Mining Co., Ltd., 3EC-VLP, thickness 25 μm) , thermal expansion coefficient 2〇ppm/t), will be the above The solution solution is coated on the rough surface to a dried core having a thickness of 阼(7), and then dried in 1 20 C for 5 minutes to obtain an adhesive sheet of the present invention having an adhesive layer. 贲 Example 6 The composition and the mixing ratio are mixed in N-methylpyrrolidone and 315674 18 1313481 襄H ^col/night. Secondly, the copper drop of the heat-resistant substrate (Mitsui Golden Shoulder, trade name, 3EC_VLP, thickness) 25 μηι), the above-mentioned adhesive solution was applied to a rough surface thereof to a state of a thickness of 祚m after drying, and then dried in 18 CTC for 1 () minutes to obtain a sheet of the present invention having an adhesive layer. Further, the weight ratio of the plastic resin component (b) / the re-peelability-imparting component (e) was 33.33. 315674 19 1313481

其他 再剝離性賦與 啟分(C) 熱可塑性樹脂 涘分(b) 熱硬化性樹脂 晟分⑻ 硬化促進劑 (四國化社製2-乙基-4-甲基咪唑） 改質矽油 (信越矽利康社製「KF-861」） 改質矽油 (信越矽利康社製「KF-105」） 1改質矽油 (東嫘•道•康尼克社製「SF8413」） 聚醯亞胺樹脂（巴川製紙所社製、含 矽氧烷芳香族聚醯亞胺、重量平均 分子量50,000) έ锏讳 ON郞 〆saa lirnl· r®T ID 仰 今- 屮Η通 〇 -'Λ 〇 ΖΜ Ο if： 1 丨 11 么霉 s和 2讳 ^麥 νψ isa 卡m 笨酚樹脂（昭和高分子社製 「CKM2400 丨） 環氧樹脂（日本環氧樹脂社製1艾比 克得828 ,) 笨酚樹脂（日本化藥社製「ΤΡΜ ,) 環氧樹脂 (大日本油墨化學工業社製「ΗΡ-7200 | ) UJ 0¾ 實施例1 1—1 Lk) U) UJ 實施例2 1—* έ Μ a m|Q U) Ο U> 1第2層 1—^ U) U> t—» ύ>ν 童 〇 k) to u> Μ 實施例5 U) 100 C&V On 1313481 比較例1 2所示組成與調配比之 除將黏接劑溶液改變為如表 片。 脂成分（b )之 外’其餘均如同實施例1，獲得比較用之黏接 另外’熱硬化性樹脂成分（ay熱可塑性樹 重量比為1.5。 比較例2 除將黏接劑溶液改變為如表2所示組成與調配比之 外’其餘均如同實施例1 ’獲得比較用之點接片。 另外，熱硬化性樹脂成分（a)/熱可塑性樹脂成分〇)之 重量比為1.5。 315674 21 1313481Other re-peelability imparting and scoring (C) Thermoplastic resin bismuth (b) Thermosetting resin bismuth (8) Hardening accelerator (2-ethyl-4-methylimidazole manufactured by Shikoku Chemical Co., Ltd.) Modified eucalyptus oil ( Shin-Etsu Chemical Co., Ltd. "KF-861") Modified oyster sauce ("KF-105" manufactured by Shin-Etsu Chemical Co., Ltd.) 1 Modified oyster sauce ("SF8413" manufactured by Toray Dow Corncon Co., Ltd.) Polyimide resin ( Manufactured by Bachuan Paper Co., Ltd., containing a fluorinated alkane polyamine, weight average molecular weight 50,000) έ锏讳ON郞〆saa lirnl· r®T ID 仰今- 屮Η通〇-'Λ 〇ΖΜ Ο if: 1 丨11 Mold s and 2 讳 ^ 麦 ψ ψ isa card m phenol resin ("CKM2400 丨" made by Showa Polymer Co., Ltd.) Epoxy resin (made by Epoxy Resin Co., Ltd. 1 Ai Bide 828,) Streptophenol resin ( Nippon Chemical Co., Ltd. "ΤΡΜ," Epoxy Resin ("-7200 | manufactured by Dainippon Ink Chemical Industry Co., Ltd." UJ 03⁄4 Example 1 1 - 1 Lk) U) UJ Example 2 1 -* έ Μ am|QU ) Ο U> 1 2nd layer 1 - ^ U) U> t-» ύ>ν 童〇k) to u> 实施 Implementation 5 U) 100 C&V On 1313481 Comparative Example 1 The composition and the ratio of the formulation shown in Fig. 2 were changed except that the adhesive solution was changed to a sheet. The fat component (b) was the same as in Example 1, and was used for comparison. Bonding another 'thermosetting resin component (ay thermal plastic tree weight ratio is 1.5. Comparative Example 2 except that the adhesive solution was changed to the composition and formulation ratio shown in Table 2, the rest were as in Example 1' In addition, the weight ratio of the thermosetting resin component (a)/thermoplastic resin component 〇) was 1.5. 315674 21 1313481

表2 比較例1 比較例2 熱硬化性樹脂成分 (a) 環氧樹脂 (大日本油墨化學工 業社製「HP-7200」） 40 苯酚樹脂（日本化藥 社製「TPM」） 20 環氧樹脂（曰本環氧 樹脂社製「艾比克得 828」） 30 苯紛樹脂（昭和高分 子社製「CKM2400」） 30 熱可塑性樹脂成 分⑻ 丙烯腈-丁二稀共聚 物樹脂（日本瑞王社 製「Nipol 1001」、重 量平均分子量30,000) 40 聚醯胺樹脂（翰克爾 曰本社製「馬克羅麥 爾德623 8」、重量平均 分子量40,000) 40 聚醯亞胺樹脂（巴川 製紙所社製、含矽氧 烷芳香族聚醯亞胺、 重量平均分子量 50,000) 再剝離性賦與成分 (C) 改質矽油 (東嫘•道•康尼克社 製「SF8413」） 改質矽油 (信越矽利康社製 「KF-105」） 改質矽油 (信越矽利康社製 「KF-861」） 其他 硬化促進劑 (四國化社製2 -乙基- 4 -曱基咪唑） 1 1 22 315674 1313481 (儲存彈性率之測定） 寻霄犧比較例令所獲得黏接劑溶液，塗布於脫模 再：，然後在製作黏接片之際便依相同條件進行乾燥， 用曰日片黏結步驟的熱處理條件（！ 7 51、2小旬施行熱 二理’而製成具黏㈣層脫模性膜。料，鞋接劑施行 ^布、乾燥成乾燥後的厚度為〇 ]mm狀態。 *將所獲得樣本切斷為5mmx 30mm，並採用彈性率測定 裝置（歐利研德克社（公司名，音譯）製、雷歐派布隆DDV_ π(商品名’音譯））’依頻率11Hz、昇溫速度π —、測 定溫度範圍“代至250t之條件進行測定。結果如表3 所不。另外，表3中的數值係指測定溫度範圍i 5〇°c至25〇 °C中，儲存彈性率最小值。 (黏接片之評估;) 1.引線接合不良 將在各實施例與比較例中所獲得黏接片，利用積層 法’黏貼於尺寸200mmx 6〇mm之QFN用導線架（Au_pD_ Νι鍍銅導線架、4χ丨6個（計64個）矩陣排列、封裝尺寸 lOmmx l〇mm ' 84 針腳）上。 針對該等之半數，施行電漿清洗。 其次’採用環氧系晶粒黏結劑，將已蒸鍍有鋁之空白 晶片（6mmx 6mm、厚度〇.4mm)，搭載於導線架的半導體元 件格載部上之後’採用引線機（Wire Bonder)(新川社製、 UTC-470BI)，將加熱溫度設定為21〇°c、us POWER設定 為30、荷重設定為〇.59N、處理時間設定為10nisec/針腳， 23 315674 1313481 1用二：線將空白晶片與引線電性耦接。 良“二的:::？體，w 出，其姓 為線接合不良的發生個數並檢測 丹、、、=果如表3所示。 2.模溢料 估。=經引線接合不良評估後的導線架，施行模溢料評 導線架，分別採用"▲ ’…導、友木、、未實施的 重量。句，將加敎、^ 劑（聯苯環氧系、填料量85 時間設為3八於、 為18〇°C、壓力設為1〇奶、處理 脂將空白晶^裝利用轉移模塑（模具成型），使用封裝樹 用部個’將在引線_接 F俨查”署接片側之面)上，有附著有封裝樹脂的封 ^數I’視為模溢料發生個數並檢測出，其結果如表3 3殘糊 2含有無施行電敷清洗在内之經模溢料評估後的導線 予採用，以施行殘糊評估。首先，依剝離迷度 5〇〇mm/min之條件，將黏接片從導線架上剝離。又 檢查黏接片剝離後的封裝體64個，將包含引線外部辆 卞部分、塑模樹脂面在内的黏接片剝離面上，附著有黏接 劑的封裝體個數，視為殘糊發生個數並揭示於表3中。 4·黏接強度 將在各實施例與比較例中所獲得黏接片切斷為km寬 315674 24 1313481 ，，並利用滾積層壓接於5〇mmx 1〇〇mmx 〇 25mmt銅板（三 菱美德克斯社（公司名，音譯）製、商品名：MF-202)、及經 鍍金之銅板的板上。其次，在相當於晶片黏結硬化（1751、 1小時）、塑模樹脂硬化（18(rc、4小時）的加熱歷程後再返 =吊溫。將該等板加熱至i 5(rc，將所獲得積層板之黏接 背1層對板朝9〇。方向拉剝時的剝離強度實施測定。 再者，此剝離強度的測定係將板之加熱溫度，依每次 5 C攸150 c昇溫至200。(：的方式實施。然後，將15〇至2〇〇 C之各測定溫度中的剝離強度最小值視為黏接強度，其結 果如表3所示。此情況中，對銅板所需的實用上黏接力， 不管有無鍍金均在〇.〇98N/cm以上。 表3 儲存彈 性率 (MPa) J\m 良g 固數） 模溢料 (個數） 發生殘糊 (個數） 黏接強度 (N/cm) 無驟 清先 娜 清先 無驟 清先 機衆 清先 無麟 清充 娜 清先 有齡 實施例1 30 0 0 0 0 0 0 0.78 0.29 貫施例2 40 0 0 0 0 0 0 0.59 0.39 實施例3 30 0 0 0 0 0 0 0.59 0.39 貫施例4 45 0 0 0 0 0 0 0.34 0.25 實把例5 30 0 0 0 0 0 0 0.49 0.39 貫施例6 50 0 0 0 0 0 0 0.29 0.29 比較例1 30 0 0 0 0 0 25 2.9 0.49~~~ 比較例2 40 0 0 0 0 0 39 0.59 0.49 如表3所示，本發明之黏接片，即便是經施行電毁清 洗過的導線架’仍完全無發生引線不良、模溢料及殘糊現 象。相對於此’未含再剝離性賦與成分（c)的比較例，則多 數發生殘糊情況。 315674 25 1313481 產業上可利用性 ρ 丄 r/τ ,N姐衣且衣适用黏接片 中，黏接劑層即便經電㈣洗，亦保持著適#剝離性 未發生殘糊。所以，藉由採用本發明之黏接片，Table 2 Comparative Example 1 Comparative Example 2 Thermosetting resin component (a) Epoxy resin ("HP-7200" manufactured by Dainippon Ink and Chemicals Co., Ltd.) 40 Phenolic resin ("TPM" manufactured by Nippon Kayaku Co., Ltd.) 20 Epoxy resin (Abeek 828, manufactured by Epoxy Epoxy Co., Ltd.) 30 Benzene resin ("CKM2400" manufactured by Showa Polymer Co., Ltd.) 30 Thermoplastic resin component (8) Acrylonitrile-butadiene copolymer resin (Japan Ruiwangshe) "Nipol 1001", weight average molecular weight 30,000) 40 Polyamide resin ("Mark Romold 623 8" manufactured by Hankel Co., Ltd., weight average molecular weight 40,000) 40 Polyimide resin (made by Bachuan Paper Co., Ltd.) Alkoxysilane-containing aromatic polyimine, weight average molecular weight 50,000) Re-peelability imparting component (C) Modified eucalyptus oil ("SF8413" manufactured by Toray Dow Corncon Co., Ltd.) Modified eucalyptus oil (Shin-Etsu Kelly "KF-105" modified oyster sauce ("KF-861" manufactured by Shin-Etsu Chemical Co., Ltd.) Other hardening accelerator (2-ethyl-4-indolyl imidazole manufactured by Shikoku Chemical Co., Ltd.) 1 1 22 315674 1313481 (Storage) Determination of modulus of elasticity) The adhesive solution obtained by the comparative example is applied to the mold release and then dried under the same conditions at the time of making the adhesive sheet, and the heat treatment condition of the bonding step of the crucible is used (! 7 51, 2 Xiaoxu applied heat two to make a sticky (four) layer release film. The material, the shoe joint was applied, and the thickness after drying to dry was 〇]mm. * Cut the obtained sample into 5mmx 30mm And using the elastic modulus measuring device (Ou Li Yan Deke (company name, transliteration) system, Leo Pai Bulong DDV_ π (trade name 'transliteration)) 'frequency 11Hz, heating rate π -, measuring temperature range" The measurement was carried out under the conditions of 250 t. The results are shown in Table 3. In addition, the values in Table 3 refer to the minimum value of the storage elastic modulus in the measurement temperature range i 5 〇 ° c to 25 〇 ° C. Evaluation;) 1. Wire bonding failure The bonding sheets obtained in the respective examples and comparative examples were adhered to the QFN lead frame of size 200 mm x 6 mm by the lamination method (Au_pD_ Νι copper-plated lead frame, 4χ丨6 (64) matrix arrangement, package size lOmmx l〇mm '84 pin) Plasma cleaning is performed for half of these. Secondly, a blank wafer (6mm x 6mm, thickness 〇.4mm) that has been vapor-deposited with aluminum is mounted on the semiconductor component of the lead frame by using an epoxy-based die bond. After the carrier, "Wire Bonder (manufactured by Shinkawa Co., Ltd., UTC-470BI) was used, and the heating temperature was set to 21 °C, the us POWER was set to 30, the load was set to 〇.59N, and the processing time was set to 10 nisec. /pin, 23 315674 1313481 1 electrically couple the blank wafer to the lead with two: wire. Good "two:::? body, w out, whose surname is the number of occurrences of poor wire bonding and the detection of Dan,,, == as shown in Table 3. 2. Membrane overflow estimation. = Evaluation of poor wire bonding After the lead frame, the die overflow evaluation lead frame is used, respectively, using "▲ '... guide, friend wood, and unimplemented weight. The sentence will be added, ^ agent (biphenyl epoxy system, filler amount 85 time) Set to 3 于, 18 〇 ° C, pressure set to 1 〇 milk, process grease, use blank transfer molding (mold molding), use package tree with a 'will be in the lead _ On the side of the splicing side, the number of seals I have attached to the encapsulating resin is regarded as the number of mold flashes generated and detected. The result is as shown in Table 3 3 Residue 2 contains no electric cleaning. The wire after the evaluation of the die overflow is used for the evaluation of the paste. First, the adhesive sheet was peeled off from the lead frame in accordance with the peeling degree of 5 〇〇 mm/min. In addition, 64 pieces of the package after peeling of the adhesive sheet were inspected, and the number of the package to which the adhesive agent was attached was regarded as the residual paste on the peeling surface of the adhesive sheet including the outer portion of the lead wire and the mold resin surface. The number of occurrences is shown in Table 3. 4. Bonding strength The adhesive sheets obtained in each of the examples and comparative examples were cut to a width of 315674 24 1313481, and were laminated to a 5 〇mmx 1 〇〇mmx 〇25 mmt copper plate by roll-rolling (Mitsubishi Meidek) Sishe (company name, transliteration) system, trade name: MF-202), and the plate of gold-plated copper plate. Next, after the heating process corresponding to the wafer bonding hardening (1751, 1 hour) and the molding resin hardening (18 (rc, 4 hours), return = hanging temperature. The plates are heated to i 5 (rc, will be The adhesion back layer of the laminate was obtained, and the peel strength of the sheet was measured at 9 〇. The peel strength was measured by heating the sheet at a temperature of 5 C 攸 150 c each time. 200. (: The method is implemented. Then, the minimum peel strength in each of the measured temperatures of 15 〇 to 2 〇〇 C is regarded as the bonding strength, and the results are shown in Table 3. In this case, the required for the copper plate Practical adhesion, whether or not gold plating is above 〇.〇98N/cm. Table 3 Storage Elasticity (MPa) J\m Good g Solid Number) Overfill (number) Residual paste (number) Sticky Connection strength (N/cm) No sudden clearing, first clearing, no first clearing, first clearing, clearing first, no lining, clearing, clearing, clearing, first age, example 1 30 0 0 0 0 0 0 0.78 0.29 Example 2 40 0 0 0 0 0 0 0.59 0.39 Example 3 30 0 0 0 0 0 0.59 0.39 Example 4 45 0 0 0 0 0 0 0.34 0.25 Real Example 5 30 0 0 0 0 0 0.49 0.39 Example 6 50 0 0 0 0 0 0 0.29 0.29 Comparative Example 1 30 0 0 0 0 0 25 2.9 0.49~~~ Comparative Example 2 40 0 0 0 0 0 39 0.59 0.49 As shown in Table 3, the adhesive sheet of the present invention Even the lead frame that has been cleaned by electro-destruction has no lead failure, mold overflow, and residual paste. Compared with the comparative example of the component (c) which does not contain the re-peelability, most of the residues occur. Paste situation 315674 25 1313481 Industrial availability ρ 丄r / τ, N sister clothes and clothing for the adhesive sheet, the adhesive layer even if it is washed by electricity (four), it is still suitable for peeling. Therefore, by using the adhesive sheet of the present invention,

等半導體裝置，便可防止引線接人又ό QFN ^泉接合不良、模溢料現象 且可防止殘糊，而可防止半導體裝置不良化。 而 【圖式簡單說明】 <When the semiconductor device is used, it is possible to prevent the lead wire from being connected and the QFN ^ spring is poorly bonded, and the die overflow phenomenon can be prevented, and the semiconductor device can be prevented from being defective. And [simplified description of the schema] <

體裝置製造用黏接片 從格載著半導體元件 第1圖係揭示當採用本發明半導 製造QFN時所。適用的導線架構造， 侧所看到的概略平面圖。 第2A圖係當採用本發明半導體裝置製造用 造QFN之方法例的黏接片黏貼步驟， 黏 開的放大概略剖視圖 Ά第1圖A- 接片製 A線剖 體裝置製造用黏接片製 ，沿第1圖A-A，線剖開The adhesive sheet for manufacturing a body device carries the semiconductor element from the cell. Fig. 1 shows the case where the QFN is manufactured by using the semiconductor of the present invention. Applicable leadframe construction, a schematic plan view seen from the side. Fig. 2A is a view showing an adhesive sheet attaching step of the method for manufacturing a QFN for manufacturing a semiconductor device of the present invention, and an enlarged schematic cross-sectional view of the adhesive opening. Fig. 1A - Bonding sheet manufacturing for the A-line forming device for the tab piece system , along the line 1A, line cut

第2 B圖係當採用本發明半導 造QFN之方法例的晶片黏結步驟 的放大概略剖視圖。 第2C圖係當採用本發明 製造QFN之方法例的引線接 開的放大概略剖視圖。 夏取道用黏接 合步驟，沿第1圖A-A，綿 置製造用黏接片 第1圖Α-Α，線剖 第2D圖係當採用本發明之半導體鼙 製造QFN之方法例的樹脂封裝步驟，、、: 開的放大概略剖視圖。 σ 片 第2Ε圖係當採用本發明之半導體聿 製造QFN之方法例的黏接片剝:步& 置製造用黏接 驟，沿第1圖Α- 315674 26Fig. 2B is an enlarged schematic cross-sectional view showing a wafer bonding step of the method of semi-conducting QFN of the present invention. Fig. 2C is an enlarged schematic cross-sectional view showing the lead wire of the method of manufacturing the QFN of the present invention. In the summer, the adhesive bonding step is carried out, along the first drawing AA, the manufacturing adhesive sheet is first shown in FIG. 1A, and the second sectional view is the resin encapsulating step in the method of manufacturing the QFN using the semiconductor crucible of the present invention. , , : An enlarged schematic cross-sectional view of the opening. σ 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片 片

Claims (1)

1313481 第93107894號專利申請案 申请專利範圍修正本 (95年1月18曰） 種半導肋衣置製造用黏接片，係可剝離地黏貼於導線 ‘或配線基板上者，其特徵在於： 該黏接片包含具備耐熱性基材與黏接劑層的積層 體，且該黏接劑層含有熱可塑性樹脂成分（b)及再剥離 性賦與成分。 2.如申6青專利範圍第1項之半導體裝置製造用黏接片，其 中，該黏接劑層係含有熱硬化性樹脂成分者。 乂如申請專利範圍第1項之半導體裝置製造用黏接片，其 令’該再剝離性賦與成分（c)係矽油者。 4. 如申6青專利範圍第丨項之半導體裝置製造用黏接片其 中，該再剝離性賦與成分（c)係具有反應性，並與熱可 塑性樹脂成分（b)形成化學性鍵結狀態。 5. 如申凊專利範圍第2項之半導體裝置製造用黏接片，其 中，該再剝離性賦與成分（c)係具有反應性，並與熱硬 化性樹脂成分（a)及熱可塑性樹脂成分（b)的混合物形成 化學性鍵結狀態。 6. 如申請專利範圍第1項之半導體裝置製造用黏接片，其 中，該黏接片係黏貼於銅或鍍金之銅上，且硬化後在 150至200 C中之剝離力為〇.〇3至5N/cm。 7. 如申请專利範圍第2項之半導體裝置製造用黏接片，其 中，该黏著劑層係由再剝離性賦與成分（c)、熱硬化性 3 ] 5674(修正本) 1 1313481 樹脂成分（a)及熱 成者。 可塑性樹脂成分（b)的混合物成膜所構 =申請專利範圍第2項之半導體裝置製造用黏接片，其 ㈣劑層之熱硬化性樹脂成分⑷與熱可塑性樹 7成分⑻的重量比率⑷_係3.5以下，（（抑））/⑷ 係6至2,0〇〇者。 9.如申请專利範圍第2項之半導體裝置製造用黏接片，1 中，該再剝離性賦與成分⑷係成膜在由熱硬化性樹脂 成分⑷及熱可塑性樹脂成分（b)所構成的黏接劑層表面 上0 1 〇.如申睛專利範圍帛i項之半導體裝置製造用黏接片，其 中’該熱可塑性樹脂成分⑻之重量平均分子量係2,000 至 1，000,000 者。 11·如申請專利範圍帛！項之半導體裝置製造用黏接片，其 中’該黏接劑層之硬化後的儲存彈性率在15〇至25〇它 中係1 MPa以上者。 12.如申請專利範圍第！項之半導體裝置製造用黏接片，其 中，a亥耐熱性基材係為玻璃轉化溫度在15 (TC以上，且 熱膨脹係數在5至50ΡρπιΓ(：的耐熱性樹脂膜。 13·如申請專利範圍第1項之半導體裝置製造用黏接片，其 中，忒耐熱性基材係熱膨脹係數在5至的金 屬_箔者。 14.如申請專利範圍第i項之半導體裝置製造用黏接片，其 中，該黏接劑層單面上係設置有保護膜者。 315674 (修正本) 1313481 1 5.如申請專利範圍第1項之半導體裝置製造用黏接片，其 中.，該黏接片在貼合於銅或鍍金之銅時的黏接強度係 0.098N/cm 以上者。 16.—種半導體裝置之製造方法，其特徵係採用申請專利範 圍第1至1 5項中任一項之半導體裝置製造用黏接片以 進行製造者。 3 315674 (修正本)1313481 Patent Application No. 93107894 (Revised by Patent Application No. (January 18, 1995) A type of semi-conductive rib garment manufacturing adhesive sheet which is releasably adhered to a wire 'or a wiring board, and is characterized by: The adhesive sheet includes a laminate having a heat-resistant substrate and an adhesive layer, and the adhesive layer contains a thermoplastic resin component (b) and a re-peelability-imparting component. 2. The adhesive sheet for manufacturing a semiconductor device according to the first aspect of the invention, wherein the adhesive layer contains a thermosetting resin component. For example, the adhesive sheet for manufacturing a semiconductor device according to the first aspect of the patent application is such that the re-peelability imparting component (c) is an oil skimmer. 4. The adhesive sheet for manufacturing a semiconductor device according to the sixth aspect of the invention, wherein the re-peelability imparting component (c) is reactive and forms a chemical bond with the thermoplastic resin component (b). status. 5. The adhesive sheet for manufacturing a semiconductor device according to the second aspect of the invention, wherein the re-peelability imparting component (c) is reactive, and the thermosetting resin component (a) and the thermoplastic resin The mixture of component (b) forms a chemically bonded state. 6. The adhesive sheet for manufacturing a semiconductor device according to claim 1, wherein the adhesive sheet is adhered to copper or gold-plated copper, and the peeling force at 150 to 200 C after hardening is 〇. 3 to 5 N/cm. 7. The adhesive sheet for manufacturing a semiconductor device according to the second aspect of the invention, wherein the adhesive layer is composed of a re-peelability imparting component (c) and a thermosetting property 3] 5674 (Revised) 1 1313481 Resin component (a) and the heat. The film forming structure of the mixture of the plastic resin component (b) = the adhesive sheet for manufacturing a semiconductor device according to the second aspect of the invention, the weight ratio of the thermosetting resin component (4) of the (four) agent layer to the thermoplastic resin 7 component (8) (4) _ is below 3.5, (())/(4) is 6 to 2, 0. 9. The adhesive sheet for manufacturing a semiconductor device according to the second aspect of the invention, wherein the re-peelable component (4) is formed of a thermosetting resin component (4) and a thermoplastic resin component (b). The surface of the adhesive layer is 0 1 〇. The adhesive sheet for manufacturing a semiconductor device according to the scope of the patent application, wherein the thermoplastic resin component (8) has a weight average molecular weight of 2,000 to 1,000,000. 11·If you apply for a patent scope帛! In the adhesive sheet for manufacturing a semiconductor device, the storage elastic modulus of the adhesive layer after hardening is 15 Å to 25 Å, and it is 1 MPa or more. 12. If you apply for a patent scope! The adhesive sheet for manufacturing a semiconductor device, wherein the a heat resistant substrate is a heat-resistant resin film having a glass transition temperature of 15 (TC or more and a thermal expansion coefficient of 5 to 50 Ρρπι (13). The adhesive sheet for manufacturing a semiconductor device according to the first aspect, wherein the heat-resistant substrate is a metal foil having a thermal expansion coefficient of 5 to 14. The adhesive sheet for manufacturing a semiconductor device according to the invention of claim i, wherein The adhesive layer is provided with a protective film on one side. 315674 (Revised) 1313481 1 5. The adhesive sheet for manufacturing a semiconductor device according to claim 1, wherein the adhesive sheet is attached The bonding strength in the case of copper or gold-plated copper is 0.098 N/cm or more. 16. A method of manufacturing a semiconductor device, characterized by using the semiconductor device according to any one of claims 1 to 15. Manufacturing adhesive sheets for the manufacturer. 3 315674 (Revised)
TW093107894A 2003-03-25 2004-03-24 Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same TWI313481B (en)

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JP4538398B2 (en) * 2005-10-31 2010-09-08 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device
JP4654062B2 (en) * 2005-03-30 2011-03-16 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device
JP4863690B2 (en) * 2005-10-31 2012-01-25 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method thereof
JP4505649B2 (en) * 2006-03-23 2010-07-21 フジコピアン株式会社 Fixed sheet
JP2009158817A (en) * 2007-12-27 2009-07-16 Tomoegawa Paper Co Ltd Thermosetting type resin composition for qfn, and adhesive sheet for qfn using it
KR20110087547A (en) * 2010-01-26 2011-08-03 도레이첨단소재 주식회사 Manufacturing method of semiconductor device using a heat-resistant adhesive sheet
JP5714349B2 (en) * 2011-01-31 2015-05-07 ニッタ株式会社 Easy peelable adhesive sheet and easy peelable adhesive tape
KR102260081B1 (en) * 2014-08-08 2021-06-03 도레이 카부시키가이샤 Adhesive for temporary bonding, adhesive layer, method for manufacturing wafer work piece and semiconductor device using same, polyimide copolymer, polyimide mixed resin, and resin composition
TWI732764B (en) * 2015-06-01 2021-07-11 日商富士軟片股份有限公司 Temporary adhesive, adhesive film, adhesive support, laminate and adhesive kit
CN108922854B (en) * 2018-06-14 2020-06-05 中国电子科技集团公司第二十四研究所 Implementation method of transient circuit packaging structure for packaging silicon-based chip
JP7187906B2 (en) * 2018-09-10 2022-12-13 昭和電工マテリアルズ株式会社 Semiconductor device manufacturing method
WO2021131925A1 (en) * 2019-12-23 2021-07-01 日産化学株式会社 Adhesive composition, laminate and method for producing same, method for peeling laminate, and method for processing semiconductor-forming substrate

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KR20040084680A (en) 2004-10-06
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MY140439A (en) 2009-12-31
KR100596186B1 (en) 2006-07-03

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