MY140439A - Adhesive sheet for semiconductor device production, semiconductor device using the same, and production method of semiconductor device - Google Patents

Adhesive sheet for semiconductor device production, semiconductor device using the same, and production method of semiconductor device

Info

Publication number
MY140439A
MY140439A MYPI20041058A MYPI20041058A MY140439A MY 140439 A MY140439 A MY 140439A MY PI20041058 A MYPI20041058 A MY PI20041058A MY PI20041058 A MYPI20041058 A MY PI20041058A MY 140439 A MY140439 A MY 140439A
Authority
MY
Malaysia
Prior art keywords
semiconductor device
production
adhesive sheet
same
adhesive
Prior art date
Application number
MYPI20041058A
Inventor
Takeshi Sato
Akinori Sei
Original Assignee
Tomoegawa Paper Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tomoegawa Paper Co Ltd filed Critical Tomoegawa Paper Co Ltd
Publication of MY140439A publication Critical patent/MY140439A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

THE PRESENT INVENTION DISCLOSES AN ADHESIVE SHEET (10) FOR SEMICONDUCTOR DEVICE PRODUCTION REMOVABLY ADHERABLE TO A LEAD FRAME (20) OR A WIRING BOARD, COMPRISING: A LAMINATE COMPOSED OF A HEAT-RESISTANT BASE MATERIAL AND AN ADHESIVE LAYER, AND A THERMOPLASTIC RESIN COMPONENT (B) AND A REMOVABILITY-IMPARTING COMPONENT (C) IN THE ADHESIVE LAYER. IN THE CASE THAT THE ADHESIVE SHEET IS USED TO PRODUCE SEMICONDUCTOR DEVICES SUCH AS A QFN (50), ADHESIVE RESIDUE AND PRODUCTION OF DEFECTIVE SEMICONDUCTOR DEVICES ARE PREVENTED WHILE MAINTAINING SATISFACTORY WIRING BONDING PROPERTIES AND MOLD FLASH CHARACTERISTICS IN THE CASE OF USING.
MYPI20041058A 2003-03-25 2004-03-25 Adhesive sheet for semiconductor device production, semiconductor device using the same, and production method of semiconductor device MY140439A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003083795A JP4421204B2 (en) 2003-03-25 2003-03-25 Adhesive sheet for manufacturing semiconductor device, semiconductor device using the same, and manufacturing method

Publications (1)

Publication Number Publication Date
MY140439A true MY140439A (en) 2009-12-31

Family

ID=33399169

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20041058A MY140439A (en) 2003-03-25 2004-03-25 Adhesive sheet for semiconductor device production, semiconductor device using the same, and production method of semiconductor device

Country Status (6)

Country Link
JP (1) JP4421204B2 (en)
KR (1) KR100596186B1 (en)
CN (1) CN100492586C (en)
HK (1) HK1073178A1 (en)
MY (1) MY140439A (en)
TW (1) TWI313481B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4654062B2 (en) * 2005-03-30 2011-03-16 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device
JP4863690B2 (en) * 2005-10-31 2012-01-25 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method thereof
JP4538398B2 (en) * 2005-10-31 2010-09-08 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device
JP4505649B2 (en) * 2006-03-23 2010-07-21 フジコピアン株式会社 Fixed sheet
JP2009158817A (en) * 2007-12-27 2009-07-16 Tomoegawa Paper Co Ltd Thermosetting type resin composition for qfn, and adhesive sheet for qfn using it
KR20110087547A (en) * 2010-01-26 2011-08-03 도레이첨단소재 주식회사 Manufacturing method of semiconductor device using a heat-resistant adhesive sheet
JP5714349B2 (en) * 2011-01-31 2015-05-07 ニッタ株式会社 Easy peelable adhesive sheet and easy peelable adhesive tape
CN110734736B (en) * 2014-08-08 2022-04-19 东丽株式会社 Adhesive for temporary bonding, adhesive layer, wafer processed body, and method for manufacturing semiconductor device using same
TWI732764B (en) * 2015-06-01 2021-07-11 日商富士軟片股份有限公司 Temporary adhesive, adhesive film, adhesive support, laminate and adhesive kit
CN108922854B (en) * 2018-06-14 2020-06-05 中国电子科技集团公司第二十四研究所 Implementation method of transient circuit packaging structure for packaging silicon-based chip
JP7187906B2 (en) * 2018-09-10 2022-12-13 昭和電工マテリアルズ株式会社 Semiconductor device manufacturing method
CN114867810A (en) * 2019-12-23 2022-08-05 日产化学株式会社 Adhesive composition, laminate, method for producing laminate, method for peeling laminate, and method for processing semiconductor-forming substrate

Also Published As

Publication number Publication date
CN1622279A (en) 2005-06-01
TWI313481B (en) 2009-08-11
TW200501208A (en) 2005-01-01
JP2004296549A (en) 2004-10-21
KR20040084680A (en) 2004-10-06
KR100596186B1 (en) 2006-07-03
HK1073178A1 (en) 2005-09-23
CN100492586C (en) 2009-05-27
JP4421204B2 (en) 2010-02-24

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