CN1280899C - 半导体装置组装用屏蔽片及半导体装置组装方法 - Google Patents
半导体装置组装用屏蔽片及半导体装置组装方法 Download PDFInfo
- Publication number
- CN1280899C CN1280899C CNB02806772XA CN02806772A CN1280899C CN 1280899 C CN1280899 C CN 1280899C CN B02806772X A CNB02806772X A CN B02806772XA CN 02806772 A CN02806772 A CN 02806772A CN 1280899 C CN1280899 C CN 1280899C
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- adhesive layer
- lead frame
- siloxane
- shield blade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims description 21
- 239000012790 adhesive layer Substances 0.000 claims abstract description 81
- -1 hydrogen siloxane Chemical class 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 15
- 230000009477 glass transition Effects 0.000 claims abstract description 8
- 239000011230 binding agent Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 8
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000008393 encapsulating agent Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 239000013464 silicone adhesive Substances 0.000 abstract 2
- 239000000565 sealant Substances 0.000 abstract 1
- 238000004513 sizing Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 238000000465 moulding Methods 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 19
- 239000007788 liquid Substances 0.000 description 17
- 238000004382 potting Methods 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229920001721 polyimide Polymers 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 238000006757 chemical reactions by type Methods 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920006358 Fluon Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 208000034189 Sclerosis Diseases 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000001451 organic peroxides Chemical class 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012491 analyte Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- KQNZLOUWXSAZGD-UHFFFAOYSA-N benzylperoxymethylbenzene Chemical compound C=1C=CC=CC=1COOCC1=CC=CC=C1 KQNZLOUWXSAZGD-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
提供一种屏蔽片,该屏蔽片在半导体装置组装时可以抑制树脂封装剂的溢出、残留粘结剂的糊剂,可以稳定地生产QFN等的半导体插件。该屏蔽片可剥离地粘结在引线架上,并通过在玻璃化转变温度为150℃以上、150~200℃的线膨胀系数为10~50ppm/℃的耐热薄膜上,设置由硅氧烷系粘结剂构成的粘结剂层而形成,其在180℃下加热1小时的重量减少率是5%以下。作为硅氧烷系粘结剂优选的是以聚二甲基硅氧烷为主要成分的、和以聚烷基链烯基硅氧烷和聚烷基氢硅氧烷为主要成分的。在将屏蔽片使用在半导体装置的组装上时,首先将屏蔽片压接在引线架上,形成半导体装置后再剥离屏蔽片。
Description
技术领域
本发明涉及在将半导体芯片搭载在金属的引线架上封装树脂后,组装QFN等的半导体装置(半导体插件)时,为了由封装树脂对引线架进行屏蔽而使用的半导体装置组装的屏蔽片,及使用它的半导体装置组装方法。
技术背景
在携带型计算机、移动电话普及的今天,对于电子设备要求更小型化、薄型化、多功能化。为了实现该要求,电子元件必须小型化、高集成化,进而要求电子部件的高密度安装技术。在此,代替以往的QFP(Quad Flat Package)及SOP(Small Outline Package)等的周边安装型,被称为CSP(Chip Size Package)的面安装型的,是以高密度安装的IC插件登场。另外,在其中,特别是被称为QFN(Quad Flat Non-lead)型的,可通过以往的引线架、金属线连接、封装树脂(模塑)的技术及装置而制作,所以主要用于100针以下的小端子型插件的制作。
以往,该QFN是按如下方法制作。即,首先在粘结板贴附工序中,在引线架的一个面上贴附由粘结板构成的屏蔽片进行屏蔽,接着,在芯片附着工序中,在引线架的相反面形成的多个的半导体元件搭载部(模垫部)上分别搭载半导体芯片等的半导体元件。接着,在金属线连接工序中,通过金属线等的接续线将多个引线和半导体元件电气地连接。接着,在树脂封装工序中,通过封装树脂封装搭载在引线架的半导体元件,然后,通过将屏蔽片从引线架剥离,形成排列多个QFN的QFN单元,最后,通过对于每个QFN切块进行单片化。
以往,作为上述方法使用的粘结板,使用在耐热薄膜上涂敷将丙烯酸系粘结剂或者天然橡胶或SBR等橡胶作为主体的橡胶系粘结剂的。可是,在使用具有由丙烯酸系粘结剂构成的粘结剂层的屏蔽片时,在将半导体芯片结合在引线架的芯片附着工序中,由于热开始分解,其分解物污染引线架,产生金属线接合不良。另外,在封装树脂(模塑)工序中,存在着与引线架的结合力变弱,封装树脂挤出到外部连接引线部分,成为“模塑飞边”现象的问题。
另外,在使用具有由橡胶系粘结剂构成的粘结剂层的屏蔽片时,由于与封装树脂和/或引线架的结合力过强,所以难以从插件上将屏蔽片剥离,因此,存在着橡胶系粘结剂残留在引线架的“残留糊剂”的问题以及引线架变形的问题。
本发明的目的在于解决以往技术所存在的上述问题。即,本发明的目的在于提供屏蔽片,其是在组装半导体装置时,没有金属线接合不良(金属线连接不良),抑制树脂封装剂挤出、残留糊剂,可以稳定地生产QFN等的半导体插件。本发明的其他目的在于提供使用这样的屏蔽片高效地组装半导体装置的方法。
发明内容
在QFN插件的制造工序中,屏蔽片在芯片附着工序及树脂封装工序中,在150~180℃下在环境中暴露1~6小时后,从引线架剥离,但上述环境下的耐热性是最重要的性质。本发明者进行锐意地研究结果发现,通过使用特定的耐热薄膜及硅氧烷系粘结剂制作屏蔽片,可得到耐上述环境的屏蔽片,从而完成本发明。
即,本发明的半导体装置制造用屏蔽片(粘结片)是在耐热性基材的一个面上具有粘结剂层,可剥离地贴附在引线架上的,其特征是作为耐热性基材,玻璃化转变温度是150℃以上,150~200℃的线膨胀系数是10~50ppm/℃的耐热薄膜,该粘结剂层是使用硅氧烷系粘结剂形成的,而且,将粘结剂层在180℃下加热1小时的重量减少率是5%以下。
在本发明的上述屏蔽片中,上述粘结剂层是使用含有平均分子量10,000~1,500,000的聚有机硅氧烷的硅氧烷系粘结剂形成的,将粘结剂层在180℃下加热1小时的重量减少率是5%以下。
本发明的上述屏蔽片中,优选的是,上述粘结剂层是使用含有平均分子量10,000~1,500,000的聚有机硅氧烷的硅氧烷系粘结剂形成的,150~200℃的动态弹性模数是1.0×104Pa以上。另外,作为硅氧烷系粘结剂最好是以聚二甲基硅氧烷为主成份及以聚烷基链烯基硅氧烷和聚烷基氢硅氧烷为主成份。
本发明的半导体装置的组装方法,是将屏蔽片压接在引线架上,半导体元件搭载在压接有屏蔽片的引线架上,用金属线连接半导体元件及引线架,接着在金属模内用树脂封装剂进行树脂封装,而后剥离该屏蔽片而构成的,其特征是使用上述屏蔽片。
附图说明
图1是本发明的半导体装置组装用屏蔽片的模式的断面图。
图2是使用本发明的半导体装置组装用屏蔽片制造QFN时所用的引线架一例的概要平面图。
图3(a)~(f)表示使用本发明的半导体装置组装用屏蔽片组装QFN方法一例的工序图。
实施发明的最佳方式
如图1所示,本发明的半导体装置组装用屏蔽片10,在耐热膜11的一个面,具有使用硅氧烷系粘结剂形成的粘结剂层12。
作为耐热膜11,应该是将屏蔽片10贴在引线架上时或者剥离时的操作是容易的,所以最好具有柔软性。本发明中,耐热膜,其玻璃化转变温度(Tg)是150℃以上,而且,使用150~200℃的线膨胀系数是10~50ppm/℃的。制作QFN等的半导体装置时,屏蔽片在芯片附着工序、金属线粘结工序及树脂封装工序等是暴露在150~180℃的环境中,耐热膜的玻璃化转变温度在Tg以上时,则线膨胀系数急剧地增加,所以与由金属构成的引线架的热膨胀差增大。此时,回到室温时,由于耐热膜和引线架的热膨胀差而发生翘曲,由于这样的原因,在芯片附着工序后,发生翘曲,在后续的工序的树脂封装工序中,不能将引线架设定在模塑金属的定位针上,产生位置错位引起不良的问题。因此,耐热膜的Tg需要在150℃以上,最好是180℃以上。另外,耐热膜的150℃~200℃的线膨胀系数是10~50ppm/℃,特别优选的是15~40ppm/℃。为了满足这些耐热条件的具体耐热膜可以举出聚酰亚胺、聚酰胺、聚醚砜、聚苯硫、聚醚酮、聚醚醚酮、三乙酰基纤维素、聚醚亚胺等的膜。
本发明的耐热膜的线膨胀系数可以用以下方法求出。即,将耐热膜在200℃下加热1小时后,将加热后的耐热膜切成5×25mm,装在TMA上(Thermal Mechanical Analyzer,真空理工社制;TM9300)。接着用1g负载,测定从150到200℃以3℃/min的升温速度升温时的样品的伸长量,用下式可以求出。
线膨胀系数=ΔL/L·Δt
(ΔL:样品的伸长长度,(200℃时的长度-150℃时的长度)
L:样品的原来长度
Δt:测定温度差(200℃-150℃,即50℃))
本发明的屏蔽片上的粘结层,与上述耐热膜相同地需要在芯片附着工序、金属线连接工序、树脂封装工序的热过程中,分解、劣化等的变化少,具有稳定的粘结力。另外,为了从引线架上可以剥离屏蔽片,屏蔽片的粘结剂层对耐热膜的粘结强度需要大于对于树脂封装剂及引线架的粘结强度。硅氧烷系粘结剂满足这样的条件,可以形成适应上述环境的粘结剂层。
因此,本发明中,粘结剂层是使用硅氧烷系粘结剂形成的,而且需要将粘结剂层在180℃下加热1小时时的重量的减少率是5%以下,优选的是3%以下。重量减少率超过5%时,则在芯片附着工序中,由于粘结剂层的分解物污染引线架,产生金属线的接续不良的问题。
硅氧烷系粘结剂,从固化反应形式可以分为使用过氧化物的有机过氧化物硬化型和使用铂催化剂加成反应型,有机过氧化物在其反应过程中发生作为自由基的残渣的低分子的有机物,可能污染引线架,所以本发明中最好使用加成反应型的硅氧烷系粘结剂。具体地作为硅氧烷系粘结剂可以举出聚二甲基硅氧烷或者聚甲基苯基硅氧烷为主成份的、及聚烷基链烯基硅氧烷和聚烷基氢硅氧烷为主成份的。进而可举出以聚有机硅氧烷为主体的硅氧烷生胶和三甲基硅氧烷硅酸为主体的硅氧烷树脂结合而得到的。
更具体的是,作为聚有机硅氧烷使用聚二甲基硅氧烷或者聚甲基苯基硅氧烷时,由于这些不具有不饱和键,不进行加成反应,所以作为硬化剂添加过氧化物,可以作为有机过氧化物硬化型的硅氧烷系粘结剂使用。与此相反,作为聚有机硅氧烷使用聚烷基链烯基硅氧烷时,由于聚烷基链烯基硅氧烷具有不饱和键的乙烯基,所以作为硬化剂添加具有和乙烯基反应的活性氢的聚烷基氢硅氧烷等,通过添加铂催化剂,可以作为加成反应的硅氧烷系粘结剂使用。这些加成反应型的硅氧烷系粘结剂是在100~140℃下加热数分钟而固化的。
本发明中,粘结剂层是使用含有平均分子量10,000~1,500,000的聚有机硅氧烷的硅氧烷系粘结剂形成的,150~200℃的动态弹性模数是1.0×104Pa以上。更优选的平均分子量是100,000~1,000,000的范围。通过将聚有机硅氧烷的平均分子量设定在上述范围,可以提高粘结剂层硬化后的剥离性,从引线架上可容易地剥离屏蔽片。另外,上述的聚有机硅氧烷的含有量是超过10重量%以上,优选的是50重量%以上,更优选的是90重量%以上的范围。通过它制作QFN等的半导体装置时,可以防止金属线的连接不良、模塑飞边、残留糊剂。
另外,聚有机硅氧烷的平均分子量低于10,000时,粘结剂层硬化后的凝聚力下降,从引线架上剥离时可能发生残留糊剂。在聚有机硅氧烷的平均分子量大于1,500,000,在配制硅氧烷系粘结剂时,则聚有机硅氧烷对有机溶剂的溶解性下降,可能得不到均匀的粘结剂,在耐热性基板上形成均匀的粘结剂层是困难的。此外,粘结剂层的膜厚不均匀时,由于屏蔽片和引线架间的密接力部分地下降,所以在树脂封装工序中容易地引起模塑飞边,是不理想的。
作为硅氧烷系粘结剂使用含有聚烷基链烯基硅氧烷和聚烷基氢硅氧烷的加成反应型粘结剂时,聚烷基氢硅氧烷的平均分子量最好是500~10,000。聚烷基氢硅氧烷的平均分子量小于500时,由于与作为主剂的有聚烷基链烯基硅氧烷混合时的反应性过高,则在粘结剂涂敷在耐热性基板前就进行硬化反应,所以难以形成均匀的粘结剂层。另外,聚烷基氢硅氧烷的平均分子量大于10,000时,与有聚烷基链烯基硅氧烷混合时的反应性过低,所以粘结剂层硬化后的凝聚力降低,从引线架上剥离时可能残留糊剂。
另外,使用上述平均分子量的聚有机硅氧烷时,粘结剂层150~200℃的动态弹性模数需要是1.0×104Pa以上。通过它,在制造QNF等的半导体装置时的金属线连接工序中,粘结剂层不易吸收超声波,其结果,可以减少与粘结剂层相接的引线架的振动,防止金属线连接不良。另外,粘结剂层150~200℃的动态弹性模数低于1.0×104Pa时,在金属线连接工序中,粘结剂层吸收超声波,引线架的振动产生金属线连接不良。
通过粘结剂层具有上述的结构,即使在150~200℃下屏蔽片也可以对粘结剂层有充分的贴敷力,在QFN等的半导体装置组装时,可以抑制树脂封装工序中引线架和屏蔽片的剥离,防止模塑飞边。
本发明中,对硅氧烷系粘结剂,为了调节热膨胀系数、导热率或者表面折缝、控制粘结性,可以含有无机或有机填料。作为无机填料可以举出粉碎型氧化硅、熔融型氧化硅、氧化铝、氧化钛、氧化铍、氧化镁、碳酸钙、氮化钛、氮化硅、氮化硼、硼化钛、硼化钨、碳化硅、碳化钛、碳化锆、碳化钼、云母、氧化锌、碳黑、氢氧化铝、氢氧化钙、氢氧化镁、三氧化锑或者这些表面用三甲基硅氧烷处理的。作为有机填料可以举出聚酰亚胺、聚酰胺亚胺、聚醚醚酮、聚醚亚胺、聚酯亚胺、尼龙、硅氧烷等。这些填料的配合量,对于构成粘结剂层的硅氧烷系树脂100重量份是1~500重量份,优选的是3~200重量份,更优选的是5~100重量份。
将粘结剂层叠层在耐热膜上的方法,可在耐热膜上直接涂敷硅氧烷系粘结剂的溶液,干燥流延法,及在脱模性膜上涂敷硅氧烷系粘结剂溶液干燥,将形成的粘结剂层转印在耐热膜上的层叠方法。粘结剂层的膜厚一般是1~30μm的范围。
粘结剂层上根据需要可以设置保护膜。作为保护膜,只要是具有脱模性可以使用任何的膜,例如,可以使用聚酯、聚乙烯、聚丙烯、聚对苯二甲酸乙二醇酯等膜,以及其表面用硅氧烷树脂或者氟化合物脱模处理了的膜。在半导体装置制造开始前将保护膜剥离下来。
以下,在组装本发明的半导体装置的方法中,参照附图说明作为半导体装置制造QFN的例子。图2是从搭载半导体元件侧看引线架时的概略图,图3(a)~(f)是表示从图2表示的引线架制造QFN的方法的工序图,是沿着图2的A-A’线切断引线架时的概略断面图。
首先,准备图2的引线架20。引线架20具备搭载IC芯片等的半导体元件的岛状多个半导体元件搭载部(模垫部)21,沿着各半导体元件搭载部21的外周配设多个引线22。
接着,如图3(a)所示,屏蔽片在贴付工序中,在引线架20的一个面上贴付本发明的屏蔽片10将粘结剂层侧成为引线架侧。贴付最好是层压法等,例如在加热下压着,通过硅氧烷系粘结剂固化后形成的粘结剂层将耐热薄膜粘结在引线架上。
接着,如图3(b)所示,在芯片附着工序中,从没有贴付屏蔽片10侧,在引线架20的半导体元件搭载部21使用芯片附着剂(图中未示出)搭载IC芯片等的半导体元件30。
接着,如图3(c)所示,在金属线连接工序中,通过金属线等的连接线31电气地连接半导体元件30和引线架20的引线22。
接着,如图3(d)所示,在封装树脂工序中,将制造中的半导体装置(图3(c))载置在金属模型内,使用封装树脂(模塑剂),例如,通过传递模塑成型等用封装树脂40封装半导体元件30。
接着,如图3(e)所示,从引线架20剥离屏蔽片10,可形成排列多个QFN50的QFN单元60。
最后,如图3(f)所示,将QFN单元60按照每个QFN50进行切断,可制造多个QFN。
实施例
以下,用实施例具体地说明本发明,但本发明不受这些实施例的限制。
实施例1
(粘结剂层形成用涂敷液的配制)
以重量比100∶1的比例混合聚烷基链烯基硅氧烷和聚烷基氢硅氧烷的混合溶液(X40-3103、信越化学社制)和铂催化剂溶液(PL50T、信越化学社制)。
(屏蔽片的制作)
作为支承体,使用Tg490℃、150~200℃的线膨胀系数为12ppm/℃的聚酰亚胺薄膜(厚度25μm),在其上涂敷上述粘结剂层形成用涂敷液,使干燥后的厚度成为8μm,在160℃下干燥15分钟,得到屏蔽片。
实施例2
(粘结剂层形成用涂敷液的配制)
以重量比100∶1的比例混合聚二甲基硅氧烷(KR120、信越化学社制)和苄基过氧化物(内巴-B、日本油脂社制)。
(屏蔽片的制作)
作为支承体,使用Tg490℃、150~200℃的线膨胀系数为12ppm/℃的聚酰亚胺薄膜(厚度25μm),在其上涂敷上述粘结剂层形成用涂敷液,使干燥后的厚度成为8μm,在160℃下干燥15分钟,得到屏蔽片。
比较例1
(粘结剂层形成用涂敷液的配制)
以重量比100∶1的比例将异氰酸酯(可络奈特L-40、日本聚氨酯社制)与丙烯酸共聚物(SK代因1131B、总研化学社制)进行混合。
(屏蔽片的制作)
作为支承体,使用Tg490℃、150~200℃的线膨胀系数为12ppm/℃的聚酰亚胺薄膜(厚度25μm),在其上涂敷上述粘结剂层形成用涂敷液,使干燥后的厚度成为8μm,在100℃下干燥5分钟后,30℃下放置7天,制作屏蔽片。
比较例2
(粘结剂层形成用涂敷液的配制)
以重量比40∶30∶30混合环氧树脂(埃皮可特828、油化壳社制)、环氧固化剂(莱其特普PSM4261、群荣化学社制)、丙烯腈-丁二烯共聚物(尼泡路1001、日本载因社制)。
(屏蔽片的制作)
作为支承体,使用Tg490℃、150~200℃的线膨胀系数为12ppm/℃的聚酰亚胺薄膜(厚度25μm),在其上涂敷上述粘结剂层形成用涂敷液,使干燥后的厚度成为8μm,在130℃下干燥5分钟,制作屏蔽片。
比较例3
(粘结剂层形成用涂敷液的配制)
以重量比100∶1的比例混合聚烷基链烯基硅氧烷和聚烷基氢硅氧烷的混合溶液(X40-3103、信越化学社制)和铂催化剂溶液(PL50T、信越化学社制)。
(屏蔽片的制作)
作为支承体,使用Tg73℃、150~200℃的线膨胀系数为60ppm/℃的聚对苯二甲酸乙二醇酯薄膜(厚度25μm),在其上涂敷上述粘结剂层形成用涂敷液,使干燥后的厚度成为8μm,在130℃下干燥5分钟,制作屏蔽片。
评价项目及评价方法
(重量减少率)
由上述实施例1及2以及比较例1~3制作的屏蔽片的粘结剂层的重量减少率的测定如下。
将各实施例1及2以及比较例1~3中得到的粘结剂涂敷在表面平滑的帝氟隆(注册商标)片使厚度1mm形成粘结剂层,与各实施例、比较例中制作屏蔽片时相同的条件下,进行粘结剂层的干燥或着硬化,制作带有粘结剂层的帝氟隆(注册商标)片。然后,仅剥离粘结剂层,使用差示热天平(精工仪器社制、TG/DTA320),测定剥离了粘结剂层在180℃下加热1小时的重量减少率。
(翘曲特性)
将上述实施例1及2以及比较例1~3制作的屏蔽片叠层在外尺寸200×60mm的QFN用引线架上(镀Au-Pd-Ni的Cu引线架、8×32个的矩阵排列、插件尺寸5×5mm、封装树脂区域180×40mm),裁断该QFN用引线架的大小制作膜叠层体。将该膜叠层体作为翘曲特性评价样品。
将该评价样品的屏蔽片朝上放置在水平台上用数字测定显微镜(奥林帕斯社制STM-UM),用Z轴坐标测定端部的翘曲高度。其结果表示在表1中。
(金属线连接性)
将上述实施例1及2,及比较例1~3制作的屏蔽片层叠在外部尺寸200×60mm的QFN用引线架上(镀Au-Pd-Ni的Cu引线架,排列成8×32个的矩阵,插件尺寸5×5mm,树脂封装区域180×40mm)。而后用环氧系芯片附着剂将铝蒸镀的空芯片(3×3mm,厚度0.4mm)粘结在引线架的模垫部,用金属线粘合器(FB131,介助社制),在温度:180℃、频率:60kHz、负载:150gf、处理温度:10ms/pin的条件下,将引线针顶端和空芯片通过金属线进行电气的连接。检查得到的插件256个,将引线侧接触不良的插件数作为金属线连接不良的个数检测出来。
(模塑飞边)
将金属线连接的引线架用环氧系封装树脂(邻甲酚醛环氧系,填料量85%),在加热温度:180℃、压力:10Mpa、处理时间:3分钟的条件下,通过模塑成型(金属模成型)封装树脂。而后,从树脂封装物剥离屏蔽片,观察该树脂封装物的屏蔽片面,确认在引线针的部分封装树脂漏出而附着树脂的插件的数量。而且,在256个的插件中,检测出由于封装树脂的漏出而发生不良的个数作为模塑飞边的个数。
(残留糊剂)
与模塑飞边相同地,在用模塑剂封装空芯片后,从引线架以剥离速度500mm/min的条件下剥离屏蔽片。检查剥离屏蔽片后的插件256个,检测出在引线外部连接部分(贴着引线的屏蔽片侧的面)所附着粘结剂的插件数作为残留糊剂的个数。
(检测结果)
在表1表示了实施例1及2、比较例1~3中得到的评价结果。
表1
重量减少率(%) | 翘曲(mm) | 发生金属线连接不良的个数(个) | 发生模塑飞边个数(个) | 发生残留糊剂的个数(个) | |
实施例1 | 0.8 | 0.3 | 0 | 0 | 0 |
实施例2 | 1.2 | 0.4 | 0 | 1 | 0 |
比较例1 | 5.6 | 0.4 | 154 | 216 | 189 |
比较例2 | 3.8 | 1.3 | 32 | 10 | 210 |
比较例3 | 0.8 | 3.2 | 0 | 0 | -*1) |
*1)没有评价
实施例3
含有平均分子量500,000的聚烷基链烯基硅氧烷和铂催化剂的溶液(TSR-1512,固形成份浓度60%,GE东芝有机硅社制)和聚烷基氢硅氧烷(CR-51,平均分子量1300,GE东芝有机硅社制)以重量比100∶1混合,配制含有加成反应型的硅氧烷系粘结剂的粘结剂层形成用涂敷液。
接着,上述粘结剂层形成用涂敷液,在与实施例1相同的聚酰亚胺膜上涂敷上述的粘结剂使得干燥后的厚度达到8μm,形成粘结剂层后,在160℃下加热15分钟,干燥及硬化粘结剂层得到本发明的屏蔽片。
实施例4
含有平均分子量400,000的聚烷基链烯基硅氧烷和铂催化剂的溶液(TSR-1516,固形成份浓度60%,GE东芝有机硅社制)和聚烷基氢硅氧烷(CR-50,平均分子量2000,GE东芝有机硅社制)以重量比100∶1混合,配制含有加成反应型的硅氧烷系粘结剂的粘结剂层形成用涂敷液。
接着,上述粘结剂层形成用涂敷液,在与实施例1相同的聚酰亚胺膜上涂敷上述的粘结剂使得干燥后的厚度达到8μm,形成粘结剂层后,在160℃下加热15分钟,干燥及硬化粘结剂层得到本发明的屏蔽片。
实施例5
以重量比100∶1的比例混合聚二甲基硅氧烷(KR-101-10、平均分子量240,000、信越化学社制)和苄基过氧化物(内巴-B、日本油脂社制)。配制含有有机过氧化物硬化型的硅氧烷系粘结剂的粘结剂层形成用涂敷液。
接着,上述粘结剂层形成用涂敷液,在与实施例1相同的聚酰亚胺膜上涂敷上述的粘结剂使得干燥后的厚度达到8μm,形成粘结剂层后,在160℃下加热15分钟,干燥及硬化粘结剂层得到本发明的屏蔽片。
此外,在上述实施例3~5中,粘结剂层形成用涂敷液中的硅氧烷树脂的平均分子量用以下进行测定。也就是,以四氢氟喃为溶剂配制0.2重量%的硅氧烷树脂溶液,使用GPC(凝胶渗透色谱)装置,将树脂分离用的柱KF-806L(昭和电工制)串联2根进行测定,求出平均分子量。
<评价项目及评价方法>
(动态弹性模数)
将各实施例3~5及比较例1及2中得到的粘结剂涂敷在帝氟隆(注册商标)板上使得厚度达到1mm,形成粘结剂层,与制作各实施例、比较例的屏蔽片时相同的条件进行粘结剂层的干燥或者硬化,制作带有粘结剂层帝氟隆(注册商标)板。
将得到的样品切断成直径7mm的圆盘状,使用弹性模数测定装置(莱奥斯特莱斯、Haake社制),在频率为1Hz、升温速度为3℃/min、温度范围为150~200℃、负荷为3N的条件下测定粘结剂层的动态弹性模数。
(重量减少率)
用与上述表1相同的方法评价。
(金属线连接性)
用与上述表1相同的方法评价。
(模塑飞边)
用与上述表1相同的方法评价。
(残留糊剂)
用与上述表1相同的方法评价。
评价结果
表2中表示了实施例3~5及比较例1及2中得到的评价结果。但是,在表2中,动态弹性模数是表示150~200℃下测定时的粘结剂层的动态弹性模数的最小值。
表2
动态弹性模数(Pa) | 重量减少率(%) | 发生金属线连接不良的个数(个) | 发生模塑飞边个数(个) | 发生残留糊剂的个数(个) | |
实施例3 | 8.0×104 | 0.8 | 0 | 0 | 0 |
实施例4 | 5.5×104 | 1.2 | 0 | 0 | 5 |
实施例5 | 2.1×104 | 3.2 | 4 | 1 | 3 |
比较例1 | 2.3×103 | 5.6 | 154 | 216 | 189 |
比较例2 | 3.8×106 | 3.8 | 32 | 10 | 210 |
从表2可以看出,在使用含有平均分子量10,000~1,500,000的聚有机硅氧烷的硅氧烷系粘结剂形成粘结剂层,制作粘结剂层的150~200℃中的动态弹性模数是1.0×104Pa以上的屏蔽片的实施例3~5中,得到的粘结剂层的重量减少率小到0.8~3.2%,使用得到的屏蔽片进行评价的结果,完全没有发生金属线连接不良、模塑飞边、残留糊剂,或者即使发生其发生的个数也是极其少的。
与此相反,使用丙烯酸系粘结剂形成粘结剂层,制作粘结剂层的150~200℃中的动态弹性模数是1.0×104Pa以下的屏蔽片的比较例1中,粘结剂层的重量减少率大到5.6%,使用得到的屏蔽片进行评价的结果,以高的概率发生金属线连接不良、模塑飞边、残留糊剂。
另外,使用橡胶系粘结剂形成粘结剂层,制作粘结剂层的150~200℃中的动态弹性模数是1.0×104Pa以上的屏蔽片的比较例2中,粘结剂层的重量减少率小到3.8%,使用得到的屏蔽片进行评价的结果,虽然金属线连接不良的个数少,但是以高概率发生残留糊剂。
产业上的利用可行性
本发明的屏蔽片具有上述的结构,所以耐热性优良,芯片附着剂的老化时的热过程中,分解物的挥发量少,不会污染引线架,所以可以得到用金属线连接半导体芯片和引线架的高的连接可靠性。另外,由于引线架的翘曲少,所以不会引起定位不良。进而,可以控制封装树脂从屏蔽片泄漏形成“模塑飞边”,由于可抑制粘结剂的残留糊剂,所以可稳定地生产QFN等的半导体插件。因此,通过使用本发明的屏蔽片,可以高效地组装半导体装置。
Claims (7)
1.一种以可剥离的方式贴附在引线架上的半导体装置组装用屏蔽片,其特征是在玻璃化转变温度是150℃以上,150~200℃的线膨胀系数是10~50ppm/℃的耐热薄膜上,设置由以聚二甲基硅氧烷为主要成分的硅氧烷系粘结剂形成的粘结剂层。
2.一种以可剥离的方式贴附在引线架上的半导体装置组装用屏蔽片,其特征是在玻璃化转变温度是150℃以上,150~200℃的线膨胀系数是10~50ppm/℃的耐热薄膜上,设置由含有聚烷基链烯基硅氧烷和聚烷基氢硅氧烷的硅氧烷系粘结剂形成的粘结剂层。
3.根据权利要求1或2所述的半导体装置组装用屏蔽片,其特征是粘结剂层在180℃下加热1小时的重量减少率是5%以下。
4.一种以可剥离的方式贴附在引线架上的半导体装置制造用粘结片,其特征是该粘结片是通过在玻璃化转变温度是150℃以上,150~200℃的线膨胀系数是10~50ppm/℃的耐热薄膜上,设置含有平均分子量10,000~1,500,000的聚二甲基硅氧烷的硅氧烷系粘结剂而形成,粘结剂层150~200℃的动态弹性模数是1.0×104Pa以上。
5.一种以可剥离的方式贴附在引线架上的半导体装置制造用粘结片,其特征是该粘结片是通过在玻璃化转变温度是150℃以上,150~200℃的线膨胀系数是10~50ppm/℃的耐热薄膜上,设置含有平均分子量10,000~1,500,000的聚烷基链烯基硅氧烷的硅氧烷系粘结剂而形成,粘结剂层150~200℃的动态弹性模数是1.0×104Pa以上。
6.根据权利要求5所述的半导体装置制造用粘结片,其特征是硅氧烷系粘结剂含有聚烷基氢硅氧烷。
7.半导体装置的组装方法,将屏蔽片压接在引线架上,将半导体元件搭载在压接有屏蔽片的引线架上,用金属线连接半导体元件及引线架,进而在金属模内用树脂封装剂进行树脂封装,而后剥离该屏蔽片而组装半导体装置,其特征是作为屏蔽片,使用权利要求1或2所述屏蔽片或权利要求4或5所述粘结片。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP81098/01 | 2001-03-21 | ||
JP2001081098A JP4002736B2 (ja) | 2001-03-21 | 2001-03-21 | 半導体装置組立用マスクシートおよび半導体装置の組み立て方法 |
JP81098/2001 | 2001-03-21 | ||
JP146606/01 | 2001-05-16 | ||
JP2001146606A JP4002739B2 (ja) | 2001-05-16 | 2001-05-16 | 半導体装置製造用粘着シート |
JP146606/2001 | 2001-05-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1498420A CN1498420A (zh) | 2004-05-19 |
CN1280899C true CN1280899C (zh) | 2006-10-18 |
Family
ID=26611699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB02806772XA Expired - Lifetime CN1280899C (zh) | 2001-03-21 | 2002-03-19 | 半导体装置组装用屏蔽片及半导体装置组装方法 |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR100572191B1 (zh) |
CN (1) | CN1280899C (zh) |
MY (1) | MY138636A (zh) |
TW (1) | TW540131B (zh) |
WO (1) | WO2002075809A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100635053B1 (ko) | 2005-06-21 | 2006-10-16 | 도레이새한 주식회사 | 전자부품용 접착테이프 |
JP4881044B2 (ja) * | 2006-03-16 | 2012-02-22 | 株式会社東芝 | 積層型半導体装置の製造方法 |
KR100910672B1 (ko) * | 2007-08-03 | 2009-08-04 | 도레이새한 주식회사 | 내열성 점착시트 |
CN101585666B (zh) * | 2009-06-22 | 2011-08-31 | 浙江新康药用玻璃有限公司 | 一种药用玻璃瓶的内表面涂膜工艺 |
CN106816202B (zh) * | 2017-02-15 | 2018-12-04 | 山东圣泉新材料股份有限公司 | 一种石墨烯改性导电银浆及其制备方法 |
KR102032767B1 (ko) * | 2017-05-12 | 2019-10-17 | (주)인랩 | Qfn 반도체 패키지, 이의 제조방법 및 qfn 반도체 패키지 제조용 마스크 시트 |
CN115491136A (zh) * | 2022-09-21 | 2022-12-20 | 江门市优彼思半导体材料有限公司 | 一种掩模带及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4205260B2 (ja) * | 1999-07-12 | 2009-01-07 | パナソニック株式会社 | 樹脂封止型半導体装置の製造方法及び半導体装置の中間体 |
-
2002
- 2002-03-11 TW TW91104471A patent/TW540131B/zh not_active IP Right Cessation
- 2002-03-19 MY MYPI20020965 patent/MY138636A/en unknown
- 2002-03-19 CN CNB02806772XA patent/CN1280899C/zh not_active Expired - Lifetime
- 2002-03-19 WO PCT/JP2002/002573 patent/WO2002075809A1/ja active Application Filing
- 2002-03-19 KR KR20037012122A patent/KR100572191B1/ko active IP Right Review Request
Also Published As
Publication number | Publication date |
---|---|
CN1498420A (zh) | 2004-05-19 |
KR20030093247A (ko) | 2003-12-06 |
KR100572191B1 (ko) | 2006-04-18 |
TW540131B (en) | 2003-07-01 |
MY138636A (en) | 2009-07-31 |
WO2002075809A1 (fr) | 2002-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1300845C (zh) | 半导体装置制造用粘合薄片、以及应用该薄片的半导体装置的制造方法 | |
CN1157105C (zh) | 内装电路器件组件及其制造方法 | |
CN1288731C (zh) | 半导体装置、粘合剂和粘合膜 | |
KR101349619B1 (ko) | 반도체 장치의 제조방법 및 이로부터 제조한 반도체 장치 | |
KR100831153B1 (ko) | 반도체 조립용 접착 필름 조성물, 이에 의한 접착 필름 및이를 포함하는 다이싱 다이본드 필름 | |
CN1942502A (zh) | 环氧树脂组合物 | |
JP2014129544A (ja) | 接着剤組成物とその製造方法及び接着剤組成物を用いた接着部材とその製造方法、半導体搭載用支持部材とその製造方法並びに半導体装置とその製造方法 | |
CN1276046C (zh) | 硅氧烷基粘合片材、将半导体芯片粘接到芯片连接元件上的方法,和半导体器件 | |
CN1535101A (zh) | 转移板和使用它的布线板及其制造方法 | |
CN1680506A (zh) | 热压粘合用硅橡胶片及其制造方法 | |
CN1280883C (zh) | 半导体装置制造用的粘接片 | |
CN1319636A (zh) | 电极连接用粘结剂及使用该粘结剂的连接方法 | |
CN1763145A (zh) | 用于电子元件的粘合带组合物 | |
CN1850503A (zh) | 热压接合用多层橡胶片 | |
JP2009256630A (ja) | 接着シート | |
JP2015126124A (ja) | 半導体パッケージの製造方法 | |
CN1633455A (zh) | 潜在性固化剂及其制备方法、以及采用潜在性固化剂的粘合剂 | |
CN1280899C (zh) | 半导体装置组装用屏蔽片及半导体装置组装方法 | |
TW201840770A (zh) | 半導體裝置製造用接著片及使用其之半導體裝置之製造方法 | |
JP4161544B2 (ja) | 半導体素子搭載用接着フィルム | |
JP2015026821A (ja) | 電子デバイスの封止方法、電子デバイスパッケージの製造方法及び封止シート | |
CN1622279A (zh) | 半导体器件制造用粘接片及用此粘接片的半导体器件和制法 | |
CN111566177B (zh) | 半导体装置制造用粘接片及使用其的半导体装置的制造方法 | |
CN1837317A (zh) | 半导体装置、半导体芯片装载用基板、它们的制造方法、粘合剂和双面粘合膜 | |
CN1942546A (zh) | 粘着片、半导体装置及半导体装置的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20061018 |