JP2006179708A - 化合物半導体スイッチ回路装置 - Google Patents
化合物半導体スイッチ回路装置 Download PDFInfo
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- 230000002093 peripheral effect Effects 0.000 description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
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- 238000005468 ion implantation Methods 0.000 description 12
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
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- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】スイッチング素子と直近の保護素子間、および隣り合う保護素子間のコントロール抵抗に、高抵抗体を接続する。高周波信号のパスを遮断し、保護素子を接続して寄生容量が存在しても、高周波信号の漏れを防止できる。従って静電破壊電圧を向上し、且つアイソレーションの劣化を抑制できる。
【選択図】 図2
Description
11 基板
12 チャネル層
13 第1ソース電極
15 第2ソース電極
14 第1ドレイン電極
16 第2ドレイン電極
17 ゲート電極
18 ソース領域
19 ドレイン領域
20 ゲート金属層
30 パッド金属層
31 GaAs基板
32 バッファ層
33 電子供給層
34 スペーサ層
35 チャネル層
36 障壁層
37 キャップ層
40 InGaP層
50 絶縁化層
60 窒化膜
100 動作領域
101 リセス部
102 コンタクト部
120 ゲート配線
130 パッド配線
150 周辺不純物領域
200、200a、200b 保護素子
201 第1不純物領域
202 第2不純物領域
203 絶縁領域
312 チャネル層
315 ソース電極
316 ドレイン電極
317 ゲート電極
330 パッド
350 周辺不純物領域
HR11、HR12、HR21、HR22、HR31、HR32 高抵抗体
LR1、LR2、LR3 低抵抗体
IN 共通入力端子
Ctl1 第1制御端子
Ctl2 第2制御端子
Ctl3 第3制御端子
OUT1 第1出力端子
OUT2 第2出力端子
OUT3 第3出力端子
I 共通入力端子パッド
C1 第1制御端子パッド
C2 第2御端子パッド
C3 第3御端子パッド
O1 第1出力端子パッド
O2 第2出力端子パッド
O3 第3出力端子パッド
CR1 第1コントロール抵抗
CR2 第2コントロール抵抗
CR3 第3コントロール抵抗
F1 第1スイッチング素子
F2 第2スイッチング素子
F3 第3スイッチング素子
CP 接続点
Claims (14)
- 複数のスイッチング素子と、前記スイッチング素子のソースまたはドレインに共通で接続する共通入力端子と、前記スイッチング素子のドレインまたはソースにそれぞれ接続する複数の出力端子と、前記スイッチング素子のゲートにそれぞれ接続する複数の制御端子とを有する化合物半導体スイッチング回路装置であって、
前記スイッチング素子と、
前記各制御端子と該制御端子に対応する前記スイッチング素子とをそれぞれ接続する複数の接続手段と、
前記各端子となる複数のパッドと、
1つの前記接続手段と、前記共通入力端子間または前記出力端子間に接続され、第1不純物領域および第2不純物領域間に絶縁領域を配置した保護素子と、を化合物半導体基板に集積化し、
1つの前記接続手段は、前記保護素子の接続点と前記スイッチング素子の間に高抵抗体が直列に接続されることを特徴とする化合物半導体スイッチ回路装置。 - 複数のスイッチング素子と、前記スイッチング素子のソースまたはドレインに共通で接続する共通入力端子と、前記スイッチング素子のドレインまたはソースにそれぞれ接続する複数の出力端子と、前記スイッチング素子のゲートにそれぞれ接続する複数の制御端子とを有する化合物半導体スイッチング回路装置であって、
前記スイッチング素子と、
前記各制御端子と該制御端子に対応する前記スイッチング素子とをそれぞれ接続する複数の接続手段と、
前記各端子となる複数のパッドと、
1つの前記接続手段と前記共通入力端子間、および前記1つの接続手段と前記出力端子間にそれぞれ接続され、第1不純物領域および第2不純物領域間に絶縁領域を配置した保護素子と、を化合物半導体基板に集積化し、
1つの前記接続手段は、前記スイッチング素子と、該スイッチング素子に直近の前記保護素子の接続点との間に高抵抗体が直列に接続されることを特徴とする化合物半導体スイッチ回路装置。 - 前記高抵抗体は隣り合う前記保護素子の接続点間に接続されることを特徴とする請求項2に記載の化合物半導体スイッチ回路装置。
- 前記高抵抗体は第3不純物領域により構成されることを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記スイッチング素子は、前記基板に不純物をイオン注入して形成したチャネル層を有するFETであり、前記第3不純物領域は前記不純物の注入領域で構成され、前記チャネル層と同程度のピーク濃度を有することを特徴とする請求項4に記載の化合物半導体スイッチ回路装置。
- 前記スイッチング素子は、前記基板上にバッファ層、電子供給層、チャネル層、障壁層およびキャップ層となる半導体層を積層したHEMTであり、前記第3不純物領域は前記キャップ層を除去して該キャップ層より下の前記半導体層を露出した領域であることを特徴とする請求項4に記載の化合物半導体スイッチ回路装置。
- 前記第3不純物領域は前記キャップ層よりシート抵抗が高いことを特徴とする請求項6に記載の化合物半導体スイッチ回路装置。
- 前記第3不純物領域を構成する前記半導体層の最上層は前記障壁層であることを特徴とする請求項6に記載の化合物半導体スイッチ回路装置。
- 前記障壁層上にInGaP層が配置され、前記第3不純物領域を構成する前記半導体層の最上層は該InGaP層であることを特徴とする請求項6に記載の化合物半導体スイッチ回路装置。
- 前記高抵抗体は5KΩ以上の抵抗値を有することを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記第1不純物領域は前記接続手段の一部であることを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記パッドに接続する配線を有し、前記パッドおよび/または配線の周辺には第4不純物領域が配置され、前記第2不純物領域は前記第4不純物領域の一部であることを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記共通入力端子に高周波アナログ信号が伝搬することを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
- 前記高抵抗体は前記1つの接続手段の一部を構成することを特徴とする請求項1または請求項2のいずれかに記載の化合物半導体スイッチ回路装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004371833A JP4939750B2 (ja) | 2004-12-22 | 2004-12-22 | 化合物半導体スイッチ回路装置 |
TW094135638A TWI300599B (en) | 2004-12-22 | 2005-10-13 | Chemical compound semiconductor switch circuit device |
KR1020050124647A KR100725574B1 (ko) | 2004-12-22 | 2005-12-16 | 화합물 반도체 스위치 회로 장치 |
CN2005101361826A CN1794584B (zh) | 2004-12-22 | 2005-12-20 | 化合物半导体开关电路装置 |
US11/314,101 US7538394B2 (en) | 2004-12-22 | 2005-12-22 | Compound semiconductor switch circuit device |
Applications Claiming Priority (1)
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JP2004371833A JP4939750B2 (ja) | 2004-12-22 | 2004-12-22 | 化合物半導体スイッチ回路装置 |
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JP2006179708A true JP2006179708A (ja) | 2006-07-06 |
JP4939750B2 JP4939750B2 (ja) | 2012-05-30 |
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JP2004371833A Expired - Fee Related JP4939750B2 (ja) | 2004-12-22 | 2004-12-22 | 化合物半導体スイッチ回路装置 |
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US (1) | US7538394B2 (ja) |
JP (1) | JP4939750B2 (ja) |
KR (1) | KR100725574B1 (ja) |
CN (1) | CN1794584B (ja) |
TW (1) | TWI300599B (ja) |
Cited By (1)
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JP2009135226A (ja) * | 2007-11-29 | 2009-06-18 | Nichia Corp | 定電流ダイオード及び定電流ダイオード付き発光装置 |
Families Citing this family (17)
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JP4804754B2 (ja) | 2002-09-09 | 2011-11-02 | オンセミコンダクター・トレーディング・リミテッド | 保護素子 |
JP4535668B2 (ja) * | 2002-09-09 | 2010-09-01 | 三洋電機株式会社 | 半導体装置 |
JP2004260139A (ja) * | 2003-02-06 | 2004-09-16 | Sanyo Electric Co Ltd | 半導体装置 |
JP4939750B2 (ja) | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
JP4939749B2 (ja) * | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
TW200642268A (en) * | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
GB2449514B (en) * | 2007-01-26 | 2011-04-20 | Filtronic Compound Semiconductors Ltd | A diode assembly |
JP2009027081A (ja) * | 2007-07-23 | 2009-02-05 | Hitachi Cable Ltd | 半導体集積回路装置及びこれを用いた半導体スイッチ装置 |
EP2339475A1 (en) * | 2009-12-07 | 2011-06-29 | STMicroelectronics (Research & Development) Limited | Inter-chip communication interface for a multi-chip package |
EP2333673B1 (en) * | 2009-12-07 | 2014-04-16 | STMicroelectronics (Research & Development) Limited | Signal sampling and transfer |
EP2330514B1 (en) * | 2009-12-07 | 2018-12-05 | STMicroelectronics (Research & Development) Limited | An integrated circuit package |
EP2333830B1 (en) | 2009-12-07 | 2014-09-03 | STMicroelectronics (Research & Development) Limited | a package comprising a first and a second die coupled by a multiplexed bus |
EP2339795B1 (en) * | 2009-12-07 | 2013-08-14 | STMicroelectronics (Research & Development) Limited | Inter-chip communication interface for a multi-chip package |
US8521937B2 (en) | 2011-02-16 | 2013-08-27 | Stmicroelectronics (Grenoble 2) Sas | Method and apparatus for interfacing multiple dies with mapping to modify source identity |
JP2015056557A (ja) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
CN110419163B (zh) * | 2017-03-22 | 2023-12-01 | 索尼半导体解决方案公司 | 半导体装置及模块 |
JP6757502B2 (ja) * | 2017-06-07 | 2020-09-23 | 株式会社村田製作所 | 双方向スイッチ回路及びスイッチ装置 |
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2004
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- 2005-12-16 KR KR1020050124647A patent/KR100725574B1/ko not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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KR20060071879A (ko) | 2006-06-27 |
TWI300599B (en) | 2008-09-01 |
JP4939750B2 (ja) | 2012-05-30 |
CN1794584B (zh) | 2011-05-04 |
CN1794584A (zh) | 2006-06-28 |
TW200623278A (en) | 2006-07-01 |
US7538394B2 (en) | 2009-05-26 |
US20060164150A1 (en) | 2006-07-27 |
KR100725574B1 (ko) | 2007-06-08 |
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