JP2006108356A - 半導体装置および電子機器 - Google Patents
半導体装置および電子機器 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 287
- 239000010408 film Substances 0.000 claims description 124
- 230000017525 heat dissipation Effects 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 25
- 239000000853 adhesive Substances 0.000 claims description 21
- 230000001070 adhesive effect Effects 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 13
- 239000012212 insulator Substances 0.000 claims description 9
- 239000002313 adhesive film Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 4
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- 230000020169 heat generation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
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Abstract
【解決手段】 半導体装置に、半導体素子1等の発熱部材が放出する熱の放熱性を向上させる金属製の放熱板10を配置する。詳細には、放熱板10を、絶縁フィルム3の半導体素子1側と反対側の表面における、半導体素子1に対応する箇所に配置する。
【選択図】 図1
Description
絶縁フィルムと、
この絶縁フィルムの一方の面上に配置された配線と、
上記絶縁フィルムの上記一方の面に対向するように配置された一つまたは複数の半導体素子と、
上記絶縁体フィルムの他方の面上に配置された放熱部材と
を備えることを特徴としている。
図1は、本発明の第1実施形態の半導体装置を示す図である。詳細には、図1(A)は、第1実施形態の半導体装置の断面図であり、図1(B)は、第1実施形態の半導体装置における半導体素子の搭載面を示す図であり、図1(C)は、第1実施形態の半導体装置の半導体素子が搭載されていない側の面を示す図である。
図3は、第2実施形態の半導体装置を示す図である。詳細には、図3(A)は、第2実施形態の半導体装置の断面図であり、図3(B)は、第1実施形態の半導体装置における半導体素子の搭載面と反対側の面を示す図である。
図4は、第3実施形態の半導体装置の絶縁フィルム43の半導体素子側と反対側の面を示す図である。
図5は、第4実施形態の半導体装置を示す図である。詳細には、図5(A)は、第4実施形態の半導体装置の断面図であり、図5(B)は、第4実施形態の半導体装置の半導体素子側の上面図であり、図5(C)は、第4実施形態の半導体装置の半導体素子側と反対側の上面図である。
図6は、第5実施形態の半導体装置を示す図である。詳細には、図6(A)は、第5実施形態の半導体装置の断面図であり、図6(B)は、第5実施形態の半導体装置の製造途中の絶縁フィルムにおける半導体素子側と反対側の表面を示す図である。また、図6(C)は、第5実施形態の半導体装置の絶縁フィルムにおける半導体素子側と反対側の表面を示す図である。
2,72 バンプ電極
3,73 絶縁フィルム
4,74 配線
5,75 ソルダーレジスト
6,76 封止樹脂
10,30,40,50,57 放熱板
66 樹脂薄膜
80,90 半導体装置
Claims (16)
- 絶縁フィルムと、
この絶縁フィルムの一方の面上に配置された配線と、
上記絶縁フィルムの上記一方の面に対向するように配置された一つまたは複数の半導体素子と、
上記絶縁体フィルムの他方の面上に配置された放熱部材と
を備えることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記放熱部材は、上記絶縁体フィルムの上記他方の面における上記半導体素子に対応する箇所に、少なくとも配置されていることを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
上記放熱部材は、上記絶縁体フィルムの上記他方の面における上記配線に対応する箇所に、少なくとも配置されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記放熱部材は、互いに連続していない複数の部分から成ることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記半導体素子は、少なくとも2種類の半導体素子を含むことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記半導体素子のバンプ電極と、上記配線とは、Au−Snの合金接合によって接続されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記半導体素子のバンプ電極と、上記配線とは、Au−Auの合金接合によって接続されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記半導体素子のバンプ電極と、上記配線とは、異方性導電接着フィルムによって接続されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記半導体素子のバンプ電極と、上記配線とは、異方性導電接着ペーストによって接続されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記半導体素子のバンプ電極と、上記配線とは、非導電性接着ペーストによって接続されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記半導体素子のバンプ電極と、上記配線とは、非導電性接着フィルムによって接続されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記配線は、上記絶縁フィルムの上記一方の面上に直接配置され、かつ、上記放熱部材は、上記絶縁フィルムの上記他方の面上に直接配置されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記配線は、上記絶縁フィルムの上記一方の面上に接着剤を介して配置され、上記放熱部材は、上記絶縁フィルムの上記他方の面上に接着剤を介して配置されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記絶縁フィルムの上に、受動素子を配置していることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記放熱部材の表面の一部または表面の全面に、絶縁性の薄膜樹脂が塗布されるか、または、上記放熱部材の表面の一部または表面の全面に、絶縁性のシート部材が貼り付けられていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置と、放熱用部品とを備える電子機器であって、
上記半導体装置の放熱部材と、上記放熱用部品とは、直接的または間接的に連結されていることを特徴とする電子機器。
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CNB2005101291378A CN100385648C (zh) | 2004-10-05 | 2005-09-30 | 半导体器件以及电子设备 |
KR1020050092674A KR20060051982A (ko) | 2004-10-05 | 2005-10-01 | 반도체 장치 및 전자기기 |
US11/241,972 US20060071325A1 (en) | 2004-10-05 | 2005-10-04 | Semiconductor device and electronic apparatus |
TW094134686A TWI302736B (en) | 2004-10-05 | 2005-10-04 | Semiconductor device and electronic apparatus |
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TWI302736B (en) | 2008-11-01 |
JP4014591B2 (ja) | 2007-11-28 |
TW200629524A (en) | 2006-08-16 |
KR20060051982A (ko) | 2006-05-19 |
CN100385648C (zh) | 2008-04-30 |
US20060071325A1 (en) | 2006-04-06 |
CN1767177A (zh) | 2006-05-03 |
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