US20060071325A1 - Semiconductor device and electronic apparatus - Google Patents
Semiconductor device and electronic apparatus Download PDFInfo
- Publication number
- US20060071325A1 US20060071325A1 US11/241,972 US24197205A US2006071325A1 US 20060071325 A1 US20060071325 A1 US 20060071325A1 US 24197205 A US24197205 A US 24197205A US 2006071325 A1 US2006071325 A1 US 2006071325A1
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- US
- United States
- Prior art keywords
- semiconductor device
- heat dissipation
- insulating film
- wiring
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 268
- 230000017525 heat dissipation Effects 0.000 claims abstract description 142
- 239000010408 film Substances 0.000 claims description 123
- 239000011347 resin Substances 0.000 claims description 23
- 229920005989 resin Polymers 0.000 claims description 23
- 239000000853 adhesive Substances 0.000 claims description 21
- 230000001070 adhesive effect Effects 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 12
- 239000002313 adhesive film Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000007789 sealing Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/732—Location after the connecting process
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/0397—Tab
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09781—Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2009—Reinforced areas, e.g. for a specific part of a flexible printed circuit
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4084—Through-connections; Vertical interconnect access [VIA] connections by deforming at least one of the conductive layers
Definitions
- the present invention relates to a semiconductor device and an electronic apparatus equipped with the semiconductor device.
- the present invention relates to a semiconductor device referred to as COFs (Chip On Films), in which a semiconductor element is placed on an insulating film formed of an organic material having wiring formed, and an electronic apparatus equipped with the semiconductor device.
- COFs Chip On Films
- TCPs Transmission Carrier Packages
- FIGS. 10A and 10B are views showing the general structure of a TCP.
- FIG. 10A is a cross sectional view of a conventional TCP
- FIG. 10B is a top plan view of the conventional TCP.
- the TCP includes a semiconductor element 101 , an insulating film 103 , wiring (inner leads) 104 , a solder resist 105 and a resin 106 .
- the semiconductor element 101 includes a main body part 111 and bump electrodes 112 extending from the main body part 111 .
- the insulating film 103 has a through-hole in which the semiconductor element 101 is placed.
- Each of the wiring 104 consists of a portion placed on the insulating film 103 through an adhesive 109 and a portion protruding from the insulating film 103 in a cantilever shape.
- the solder resist 105 is placed on a part of the insulating film 103 and a part of the wiring 104 .
- the resin 106 is placed around the periphery of the through-hole in order to fix the semiconductor element 101 to the insulating film 103 .
- the bump electrodes 112 of the semiconductor element 101 are each connected to the portions of the wiring 104 protruding in a cantilever shape from a side where the wiring 104 are not placed on the insulating film 103 .
- the wiring 104 is placed on the thin insulating film 103 , whereby the thickness of an electrical circuit is markedly reduced.
- a COF Chip on Film
- TCP Chip on Film
- FIGS. 11A and 11B are views showing the general structure of a conventional COF.
- FIG. 11A is a cross sectional view of the conventional COF
- FIG. 11B is a top plan view of the conventional COF.
- the COF is different from the TCP in that no through-hole is present at a portion of an insulating film opposed to a semiconductor element, and that portions of wiring 124 connected to bump electrodes 132 on the semiconductor element 121 are backed by the insulating film 123 .
- the COD includes the semiconductor element 121 , the insulating film 123 , the wiring 124 , a solder resist 125 and a resin 126 .
- the semiconductor element 121 has a main body part 131 and the bump electrodes 132 .
- the wiring 124 is placed on one side surface of the insulating film 123 , and the solder resist 125 is placed on a part of the insulating film 123 and a part of the wiring 124 .
- a main body part 131 of the semiconductor element 121 is placed on the side of the insulating film 123 where the wiring 124 is patterned.
- the bump electrodes 132 are connected to the wiring 124 on the insulating film 123 .
- the resin 126 is placed around the periphery of the semiconductor element 121 and plays a role of fixing the semiconductor element 121 to the insulating film 123 .
- the TCP shown in FIGS. 10 A and B and the COF shown in FIG. 11 have the problem that heat generated due to operation of the semiconductor element 101 , 121 can be cooled only by heat conduction and heat dissipation of the wiring 104 , 124 , the insulating film 103 , 123 , and the sealing resin 106 , 126 . Therefore, measures for heat dissipation have conventionally been taken by installing a metal plate for heat dissipation or a heat dissipation fan or by changing the shape of a casing in an electronic apparatus on which the COF or TCP is mounted.
- FIG. 12 shows an electronic apparatus in which a conventional heat dissipation metal plate 140 is installed.
- the electronic apparatus includes a casing 149 , a COF semiconductor device 148 , a heat dissipation plate 140 and an insulating film 141 .
- the COF semiconductor device 148 is placed on the insulating film 141 .
- the heat dissipation plate 140 is placed on the insulating film 141 of the side opposite to the side of the COF device.
- the heat dissipation plate 140 forms a part of an outer wall of the electronic apparatus.
- the COF semiconductor device 148 is placed on the heat dissipation plate 140 that forms the part of the outer wall of the electronic apparatus through the insulating film 141 , whereby heat generated in the semiconductor device 148 is discharged through the heat dissipation plate 140 .
- JP2001-308239A and JP5-326620A are exemplified as literatures of the above prior art.
- An object of the present invention is therefore to provide a semiconductor device excellent in heat dissipation of the heat discharged from a semiconductor element, and an electronic apparatus provided with the semiconductor device.
- the present invention provides a semiconductor device comprising:
- the semiconductor element may be a junction type transistor, a transistor such as a field effect type transistor, a rectifier diode, a light-emitting diode, a diode such as a photodiode, a memory element, an active element such as an IC (integrated circuit).
- the heat dissipation plate is provided on the surface of the insulating film of the side opposite to the mounting surface of the semiconductor element, heat discharged by the semiconductor element and transferred through the insulating film can be dissipated by the heat dissipation plate. Therefore, since a temperature increase of the semiconductor device can be suppressed, a malfunction of the semiconductor element as a result of the increase in the temperature of the semiconductor element, which is attributed to generation of heat in operation of the semiconductor element, can be prevented.
- the heat dissipation effect can be improved, the more semiconductor elements can be mounted in the same volume of space.
- high-density arrangement of semiconductor elements can be performed on the insulating film.
- the heat dissipation member is placed at least at a place corresponding to the semiconductor element on the other side surface of the insulating film.
- the heat dissipation member is at least placed at a place corresponding to the semiconductor element on the other side surface of the insulating film, the distance between the semiconductor element as a heat source and the heat dissipation member can be reduced. Therefore, the heat dissipation performance can further be improved.
- the heat dissipation member is placed at least at a place corresponding to the wiring on the other side surface of the insulating film.
- the heat dissipation member is at least placed at a place corresponding to the wiring on the other side surface of the insulating film, the distance between the semiconductor element as a heat source and the heat dissipation member can be reduced. Therefore, the heat dissipation performance can further be improved.
- the heat dissipation member is composed of a plurality of portions which are discontinuous with one another.
- the semiconductor device includes at least two types of semiconductor elements.
- a bump electrode of the semiconductor element is connected to the wiring by Au—Sn alloy bonding.
- the bump electrode of the semiconductor element is connected to the wiring by Au—Sn alloy bonding, the bump electrodes can firmly be bonded to the wiring.
- a bump electrode of the semiconductor element is connected to the wiring by Au—Au alloy bonding.
- the bump electrode of the semiconductor element is connected to the wiring by Au—Au alloy bonding, the bump electrodes can firmly be bonded to the wiring.
- a bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive film.
- the bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive film, the bump electrodes can firmly be bonded to the wiring.
- a bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive paste.
- the bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive paste, the bump electrodes can firmly be bonded to the wiring.
- a bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive paste.
- the bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive paste, the bump electrodes can firmly be bonded to the wiring.
- a bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive film.
- the bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive film, the bump electrodes can firmly be bonded to the wiring.
- the wiring is placed directly on the one side surface of the insulating film, and the heat dissipation member is placed directly on the other side surface of the insulating film.
- the wiring is directly placed on the one side surface of the insulating film, and the heat dissipation member is directly placed on the other side surface of the insulating film, it is surely possible to prevent the wiring from being electrically connected to the heat dissipation member, as well as prevent the semiconductor device from being damaged.
- the wiring is placed on the one side surface of the insulating film through an adhesive, while the heat dissipation member is placed on the other side surface of the insulating film through the adhesive.
- connection between the wiring and the insulating film can be made firm, and also connection between the heat dissipation member and the insulating film can be made firm.
- a passive element is placed on the insulating film.
- the passive element may be a capacitor, a resistor or a coil.
- the semiconductor When the passive element is placed on the insulating film, the semiconductor is apt to be subjected to high temperatures because heat is discharged from the passive element besides the semiconductor element. This makes the significance of placing the heat dissipation member large.
- an insulating thin-film resin is applied to a part of or an entire surface of the heat dissipation member; or
- a short circuit between the heat dissipation member and the wiring or other components can surely be prevented thanks to the thin-film resin or the insulating sheet member.
- an electronic apparatus comprising the above-stated semiconductor device and a heat dissipation component, wherein the heat dissipation member of the semiconductor device is directly or indirectly connected to the heat dissipation component.
- the semiconductor device of the above invention since the semiconductor device of the above invention is equipped, the heat dissipation effect can be made large, and a failure attributable to the temperature increase can surely be prevented.
- the present invention As described above, according to the present invention, a large quantity of heat can be discharged through the heat dissipation member. Therefore, the heat dissipation performance can markedly be improved, compared with the conventional semiconductor device that only has a heat dissipation method using the heat conduction or heat dissipation from the wiring, insulating film, resin and semiconductor element.
- the semiconductor device since the semiconductor device has large heat dissipation performance, measures for the heat dissipation in electronic apparatuses on which semiconductor devices are mounted can be reduced, and semiconductor devices can be mounted on an electronic apparatus highly densely.
- the heat dissipation performance of the semiconductor device can be improved, and a malfunction of the semiconductor element as a result of the increase in the temperature of the semiconductor element can be prevented, and the more semiconductor elements can be mounted in the same volume of space.
- FIGS. 1 A , B and C are views showing a semiconductor device according to a first embodiment of the present invention
- FIGS. 2 A and B are cross sectional views showing a semiconductor device of a comparative example
- FIGS. 3 A and B are views showing a semiconductor device according to a second embodiment of the present invention.
- FIG. 4 is a view showing a surface of an insulating film of the side opposite to the side of a semiconductor element in a semiconductor device according to a third embodiment of the present invention.
- FIGS. 5A , B, C and D are views showing a semiconductor device according to a fourth embodiment of the present invention.
- FIGS. 6 A , B and C are views showing a semiconductor device according to a fifth embodiment of the present invention.
- FIGS. 7 A , B and C are views showing an example of a method of bonding bump electrodes of a semiconductor element to wiring on an insulating film
- FIG. 8 is a cross sectional view of an electronic apparatus according to the first embodiment
- FIG. 9 is a cross sectional view of an electronic apparatus according to the second embodiment.
- FIGS. 10 A and B are views showing the general structure of a conventional TCP
- FIG. 11 is a view showing the general structure of a conventional COF.
- FIG. 12 shows an electronic apparatus in which a conventional heat dissipation metal plate is installed.
- FIG. 1A , B and C are views showing a semiconductor device according to a first embodiment of the present invention.
- FIG. 1A is a cross sectional view of the semiconductor device of the first embodiment.
- FIG. 1B is a view showing a mounting surface of a semiconductor element in the semiconductor device of the first embodiment.
- FIG. 1C is a view showing a surface of the side on which the semiconductor element in the semiconductor device of the first embodiment is not mounted.
- the semiconductor device includes a semiconductor element 1 , an insulating film 3 , wiring 4 , a solder resist 5 , a sealing resin 6 and a heat dissipation metal plate 10 as an example of a heat dissipation member.
- the wiring 4 is placed on one side surface of the insulating film 3 .
- the semiconductor element 1 has a main body part 1 and bump electrodes 2 .
- the bump electrodes 2 are each connected to the wiring 4 .
- the solder resist 5 is placed at a peripheral portion of the semiconductor element 1 on the insulating film 3 so as to serve as a barrier to solder when the semiconductor element 1 is soldered to the wiring 4 .
- the sealing resin 6 is provided in a manner so as to be in contact with the entire side surfaces of the semiconductor element 1 as shown in FIG. 1A . The sealing resin 6 surely fixes the semiconductor element 1 to the insulating film 3 .
- the heat dissipation plate 10 is placed on a surface of the insulating film 3 of the side opposite to the side of the semiconductor element 1 .
- a surface area of the heat dissipation plate 10 is smaller than a surface area of the insulating film 3 .
- the heat dissipation plate 10 is placed at a place corresponding to the semiconductor element 1 on the opposite side surface thereof.
- the heat dissipation plate 10 is placed on the surface of the insulating film 3 of the side opposite to the mounting surface of the semiconductor element 1 , heat discharged from the semiconductor element 1 and conducted through the insulating film 3 can be dissipated by the heat dissipation plate 10 . Therefore, since a temperature increase of the semiconductor device 1 can be suppressed, the occurrence of a malfunction of the semiconductor element 1 as a result of an increase in the temperature of the semiconductor element, which is attributed to generation of heat in operation of the semiconductor element 1 , can be prevented.
- the heat dissipation effect can be improved, and the temperature increase due to generation of heat, which is attributed to high-density mounting resulting from an increase in the number of functions and a reduction in the size of electronic apparatuses as well as an increase in the number of outputs in semiconductor elements, can surely be prevented.
- the semiconductor device of the first embodiment since the heat dissipation effect can be improved, the more semiconductor elements 1 can be mounted in the same volume of space. Thus, high-density arrangement of the semiconductor elements 1 can be performed on the insulating film.
- the heat dissipation plate 10 is placed at a place corresponding to the semiconductor element 1 , on a surface of the insulating film, on which the semiconductor element 1 is not mounted. Therefore, the heat dissipation performance can efficiently be improved while keeping the production costs low.
- the heat dissipation plate 10 is placed at the place corresponding to the semiconductor element 1 on the insulating film 3 .
- the heat dissipation plate may also be placed at places corresponding to the semiconductor element and the wiring on the insulating film. In this case, the heat dissipation performance of the semiconductor device can further be improved.
- the wiring 4 is directly placed on one side surface of the insulating film 3 , while the heat dissipation plate 10 is directly placed on the other side surface of the insulating film 3 .
- the wiring may also be placed on one side surface of the insulating film through an adhesive, while the heat dissipation member may be placed on the other side surface of the insulating film through the adhesive. In this case, it is possible to make a firm connection between the wiring and the insulating film, as well as possible to make a firm connection between the heat dissipation member and the insulating film.
- the heat dissipation effect can be improved by providing the heat dissipation plate 10 on the opposite surface of the mounting surface of the semiconductor element 1 in the COF, it is possible to prevent the occurrence of a malfunction of the semiconductor element 1 as a result of the temperature increase of the semiconductor element 1 , which is caused by generation of heat in operation of the semiconductor element 1 , and it also becomes feasible to mount the more semiconductor elements 1 in the same volume of space.
- FIG. 2 A is a cross sectional view of a semiconductor device of a comparative example fabricated in order to compare it with the semiconductor device of the present invention. In more detail, it shows a TCP semiconductor device in which a heat dissipation plate 20 is placed.
- FIGS. 3A and B are views showing a semiconductor device according to a second embodiment of the present invention.
- FIG. 3A is a cross sectional view of the semiconductor device of the second embodiment
- FIG. 3B is a view showing a surface of the side opposite to the side of the mounting surface of the semiconductor element in the semiconductor device of the first embodiment.
- the semiconductor device of the second embodiment is the same as the semiconductor device of the first embodiment except for the shape of a heat dissipation plate 30 .
- the same components as those of the semiconductor device of the first embodiment are designated by similar numerals, and description thereof is omitted. Further, in the semiconductor device of the second embodiment, description of the effect in common with that of the semiconductor device of the first embodiment is omitted, and only the constitution and effect that are different from those of the semiconductor device of the first embodiment are described.
- the heat dissipation plate 30 larger than the insulating film 3 is placed on a surface of the insulating film 3 of the side opposite to the side of the semiconductor element 1 .
- the heat dissipation plate 30 larger than the insulating film 3 is placed on the surface of the insulating film 3 of the side opposite to the side of the semiconductor element 1 , the heat dissipation effect of the heat dissipation plate 30 can markedly improved, thus making it possible to surely prevent the temperature increase due to generation of heat from the semiconductor element 1 in the COF.
- FIG. 4 is a view showing a surface of an insulating film 43 of the side opposite to the side of the semiconductor element in a semiconductor device of a third embodiment.
- portions 41 shown in dotted lines are those whose temperatures become higher than those of the other portions within the insulating film 43 , by the arrangement of heat sources such as semiconductor elements etc. on the insulating film 43 .
- three square-shaped heat dissipation plates 40 are placed separately in a manner so as to cover the high-temperature portions 41 that are present separately on the surface of the insulating film 43 of the side opposite to the side of the semiconductor element.
- the temperature increase of the semiconductor device can efficiently be suppressed, while keeping the production costs of the semiconductor device low.
- the number of high-temperature portions within the insulating film 43 is three, but the number of high-temperature portions may be two or four or more.
- the number of heat dissipation members that are placed separately may be two or four or more.
- the shape of each of the heat dissipation members does not need to be square, and it is a matter of course that any shape, such as circular, other than square may be applicable.
- FIGS. 5A , B, C and D are views showing a semiconductor device according to a fourth embodiment.
- FIG. 5A is a cross sectional view of the semiconductor device of the fourth embodiment
- FIG. 5B is a top plan view of the side of the semiconductor element in the semiconductor device of the fourth embodiment
- FIG. 5C is a top plan view of the side opposite to the side of the semiconductor element in the semiconductor device of the fourth embodiment.
- the semiconductor device of the fourth embodiment is the same as the semiconductor device of the first embodiment except for the shape of a heat dissipation plate 50 .
- the same components as those of the semiconductor device of the first embodiment are designated by similar numerals, and description thereof is omitted. Further, in the semiconductor device of the fourth embodiment, description of the effect in common with that of the semiconductor device of the first embodiment is omitted, and only the constitution and effect that are different from those of the semiconductor device of the first embodiment are described.
- the heat dissipation plate 50 has a shape corresponding to the shape of heat dissipation components in the semiconductor device on the insulating film 3 .
- the heat dissipation plate 50 is placed at a place of a surface of the insulating film 3 of the side opposite to the side of the semiconductor element 1 in the semiconductor device.
- End portions 53 of the heat dissipation plate 50 are connected to the heat dissipation components placed on the side of the semiconductor element in the semiconductor device.
- the heat dissipation plate 50 is directly connected to the heat dissipation components, heat can efficiently be transferred to the heat dissipation plate 50 by heat conduction, so that the conductive heat can be discharged from a surface of the heat dissipation plate 50 . Therefore, a temperature increase of the semiconductor device due to generation of heat from the COF semiconductor element can further be efficiently prevented.
- the shape of the heat dissipation plate 50 is such that it corresponds to the shape of the heat dissipation components in the semiconductor device and that the heat dissipation plate 50 can be connected to the heat dissipation components directly.
- the shape of the heat dissipation plate 57 is such that it corresponds to the shape of the high-temperature portions on the insulating film 3 and that the heat dissipation plate 57 can be connected to the heat dissipation components directly through their end portions 58 as shown in FIG. 5D .
- the shape of the heat dissipation plate 57 can be made simple. Therefore, the heat dissipation performance can be improved while keeping the production costs low.
- FIGS. 6A , B and C are views showing a semiconductor device according to a fifth embodiment. Describing it in more detail, FIG. 6A is a cross sectional view of the semiconductor device of the fifth embodiment, FIG. 6B is a view showing a surface of an insulating film of the side opposite to the side of the semiconductor element in the semiconductor device of the fifth embodiment during the production. FIG. 6C is a view showing a surface of the insulating film of the side opposite to the side of the semiconductor element in the semiconductor device of the fifth embodiment.
- the semiconductor device of the fifth embodiment is the same as the semiconductor device of the fourth embodiment except that an insulating thin-film resin 66 is placed on the surface of the insulating film 3 of the side opposite to the side of the semiconductor element and that the heat dissipation plate 50 is placed on this surface.
- the same components as those of the semiconductor device of the fourth embodiment are designated by similar numerals, and description thereof is omitted. Further, in the semiconductor device of the fifth embodiment, description of the effect in common with that of the semiconductor device of the fourth embodiment is omitted, and only the constitution and effect that are different from those of the semiconductor device of the fourth embodiment are described.
- an insulating thin-film resin 66 is applied to a place of the heat dissipation plate 50 where a contact with wiring or other components is concerned.
- the insulating thin-film resin 66 is applied to the place of the heat dissipation plate 50 where the contact with the wiring or other components is concerned, a short circuit between the heat dissipation plate 50 and the wiring or other components can be prevented. Therefore, the element characteristics and life reliability of the semiconductor element can be improved.
- the insulating thin-film resin 66 is placed on a part of the heat dissipation plate 50 as shown in FIG. 6C .
- an insulating thin-film resin may also be placed on the entire heat dissipation member.
- an insulating sheet may also be pasted on a part of or the entire heat dissipation member.
- only one semiconductor element 1 is placed on the insulating film 3 .
- a plurality of semiconductor elements e.g., an LED and a transistor
- a passive element may be placed in addition to the semiconductor element.
- the heat dissipation plate is placed on the insulating film 3 .
- Methods of placing the heat dissipation plate on the insulating film 3 include a method of punching out a thin film material such as metal with a die and then pasting it on the insulating film through an adhesive, and a method of pasting an insulating film and a thin film such as metal without using an adhesive, followed by forming a pattern according to the subtractive method.
- Other methods include a method of pasting an insulating film and a thin film such as metal through an adhesive, followed by forming a pattern according to the subtractive method, a method of forming a metal pattern on an insulating film according to the semi additive method.
- FIGS. 7A , B and C are views showing an example of a method of bonding bump electrodes of a semiconductor element to wiring on an insulating film.
- the bump electrodes 72 of the semiconductor element 71 shown in FIG. 7 are made of metal.
- the semiconductor element 71 is positioned with respect to the insulating film 73 so that the tin-plated wiring 74 and the gold bump electrodes 72 on the semiconductor element 71 are opposed to each other through an ACF (anisotropic conductive adhesive film).
- ACF anisotropic conductive adhesive film
- a surface of the semiconductor element 71 on the side opposite to the side of the bump electrodes 72 is pressed using a pressing member 77 , followed by heating for a certain period of time so that the bump electrodes 72 and the wiring 74 is bonded to each other as shown in FIG. 7B . In this manner, the bump electrodes 72 are firmly bonded to the wiring 74 .
- a sealing resin 76 is injected into a gap formed between the semiconductor element 71 and the insulating film 73 so that the moisture resistance and mechanical strength are improved. In this manner, bonding the bump electrodes 72 to the wiring 74 on the insulating film 73 is completed.
- reference numeral 75 denotes a solder resist. As shown in FIGS. 7A , B and C, if the solder resist 75 is placed on a portion other than a portion where the bump electrodes 72 are bonded to the wiring 74 on the insulating film 73 , conductive foreign matter is in contact with the wiring 74 , so that the occurrence of a short circuit in the semiconductor device can surely be prevented.
- the sealing resin 76 may be omitted.
- the wiring 74 is tin-plated.
- the wiring may be gold-plated. Then, the bump electrodes and the wiring may firmly be bonded to each other using Au—An alloy.
- the wiring 74 on the insulating film 73 and the bump electrodes 72 on the semiconductor element 71 are positioned through the ACF so that they are opposed to each other.
- the wiring on the insulating film and the bump electrodes on the semiconductor element may be positioned so that they are opposed to each other through an ACP (anisotropic conductive adhesive paste), NCP (nonconductive adhesive paste) or nonconductive adhesive film.
- the sealing resin can be omitted as in the case where the ACF is used.
- This electronic apparatus includes a housing 89 , a heat dissipation component 84 constructing a part of an outer wall of the electronic apparatus, and a semiconductor device 80 of the present invention placed within the electronic apparatus.
- the electronic apparatus 80 has a semiconductor element 81 , an insulating film 83 , a sealing resin 86 and a heat dissipation plate 87 .
- a large part of the heat dissipation plate 87 is interposed between the insulating film 83 and the heat dissipation component 84 .
- the heat dissipation plate 87 of the semiconductor device 80 can also efficiently discharge heat in addition to the heat dissipation component 84 . Therefore, the temperature increase of the electronic apparatus can further be suppressed.
- the heat dissipation component 84 is provided at a portion other than the semiconductor device 80 .
- the semiconductor device of the present invention is provided with measures for heat dissipation, providing a heat dissipation component at the portion other than the semiconductor device is not necessarily required. By omitting the heat dissipation component at the portion other than the portion of the semiconductor device, the production costs of electronic apparatuses can be reduced, and electronic apparatuses can be made compact.
- FIG. 9 is a cross sectional view of an electronic apparatus according to a second embodiment equipped with the semiconductor device of the present invention.
- This electronic apparatus includes a housing 99 , a heat dissipation component 94 constructing a part of an outer wall of the electronic apparatus, and a semiconductor device 90 of the present invention placed within the electronic apparatus.
- the semiconductor device 90 includes a semiconductor element 91 , an insulating film 93 , a sealing resin 96 and a heat dissipation plate 97 .
- a portion of the heat dissipation plate 97 corresponding to the semiconductor device 91 constructs a part of an outer wall of the electronic apparatus.
- the portion of the heat dissipation plate 97 corresponding to the semiconductor element 91 constructs the part of the outer wall of the electronic apparatus, heat discharged from the semiconductor element 91 can efficiently be discharged to the outside space. Therefore, a temperature increase in the electronic apparatus can further be suppressed.
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Abstract
A semiconductor device is provided with a heat dissipation metal plate which improves heat dissipation performance in heat generating members of a semiconductor element and the like. In particular, the heat dissipation metal plate is placed on a surface of an insulating film, the surface being located on an opposite side to the semiconductor element. This plate makes it possible to provide the semiconductor device and an electronic apparatus with the same demonstrating the superiority in heat dissipation performance when heat is discharged from the semiconductor element and the like.
Description
- This nonprovisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2004-292435 filed in Japan on Oct. 5, 2004, the entire contents of which are hereby incorporated by reference.
- The present invention relates to a semiconductor device and an electronic apparatus equipped with the semiconductor device. For details, the present invention relates to a semiconductor device referred to as COFs (Chip On Films), in which a semiconductor element is placed on an insulating film formed of an organic material having wiring formed, and an electronic apparatus equipped with the semiconductor device.
- Conventionally, there have been TCPs (Tape Carrier Packages) as semiconductor devices in which a semiconductor element is placed on an insulating film having wiring formed.
-
FIGS. 10A and 10B are views showing the general structure of a TCP. In more detail,FIG. 10A is a cross sectional view of a conventional TCP, andFIG. 10B is a top plan view of the conventional TCP. - The TCP includes a
semiconductor element 101, aninsulating film 103, wiring (inner leads) 104, a solder resist 105 and aresin 106. - The
semiconductor element 101 includes amain body part 111 andbump electrodes 112 extending from themain body part 111. Theinsulating film 103 has a through-hole in which thesemiconductor element 101 is placed. Each of thewiring 104 consists of a portion placed on theinsulating film 103 through an adhesive 109 and a portion protruding from theinsulating film 103 in a cantilever shape. Thesolder resist 105 is placed on a part of theinsulating film 103 and a part of thewiring 104. Theresin 106 is placed around the periphery of the through-hole in order to fix thesemiconductor element 101 to theinsulating film 103. - The
bump electrodes 112 of thesemiconductor element 101 are each connected to the portions of thewiring 104 protruding in a cantilever shape from a side where thewiring 104 are not placed on theinsulating film 103. - In the TCP, the
wiring 104 is placed on the thininsulating film 103, whereby the thickness of an electrical circuit is markedly reduced. - A COF (Chip on Film) is exemplified as another semiconductor device different from the TCP in which the semiconductor element is connected to the insulting film, on which the wiring is formed.
-
FIGS. 11A and 11B are views showing the general structure of a conventional COF. In more detail,FIG. 11A is a cross sectional view of the conventional COF, andFIG. 11B is a top plan view of the conventional COF. - The COF is different from the TCP in that no through-hole is present at a portion of an insulating film opposed to a semiconductor element, and that portions of
wiring 124 connected tobump electrodes 132 on thesemiconductor element 121 are backed by theinsulating film 123. - In more detail, the COD includes the
semiconductor element 121, theinsulating film 123, thewiring 124, a solder resist 125 and aresin 126. Thesemiconductor element 121 has amain body part 131 and thebump electrodes 132. - The
wiring 124 is placed on one side surface of theinsulating film 123, and thesolder resist 125 is placed on a part of theinsulating film 123 and a part of thewiring 124. - A
main body part 131 of thesemiconductor element 121 is placed on the side of theinsulating film 123 where thewiring 124 is patterned. Thebump electrodes 132 are connected to thewiring 124 on theinsulating film 123. Theresin 126 is placed around the periphery of thesemiconductor element 121 and plays a role of fixing thesemiconductor element 121 to theinsulating film 123. - However, the TCP shown in
FIGS. 10 A and B and the COF shown inFIG. 11 have the problem that heat generated due to operation of thesemiconductor element wiring insulating film sealing resin -
FIG. 12 shows an electronic apparatus in which a conventional heatdissipation metal plate 140 is installed. - The electronic apparatus includes a
casing 149, aCOF semiconductor device 148, aheat dissipation plate 140 and aninsulating film 141. TheCOF semiconductor device 148 is placed on theinsulating film 141. Theheat dissipation plate 140 is placed on theinsulating film 141 of the side opposite to the side of the COF device. Theheat dissipation plate 140 forms a part of an outer wall of the electronic apparatus. - In this electronic apparatus, the
COF semiconductor device 148 is placed on theheat dissipation plate 140 that forms the part of the outer wall of the electronic apparatus through theinsulating film 141, whereby heat generated in thesemiconductor device 148 is discharged through theheat dissipation plate 140. - However, in recent years, high-density mounting of electronic components in an electronic apparatus is required as a result of an increase in the number of functions and a reduction in the size of electronic apparatuses, and there is a problem that sufficient measures for heat dissipation are not taken with the provision of the
heat dissipation plate 140 and so on. - With the prevalence of multioutput semiconductor elements, there is also a limit in reducing the generation of heat in a semiconductor element itself in operation of the semiconductor element.
- JP2001-308239A and JP5-326620A are exemplified as literatures of the above prior art.
- An object of the present invention is therefore to provide a semiconductor device excellent in heat dissipation of the heat discharged from a semiconductor element, and an electronic apparatus provided with the semiconductor device.
- In order to solve the above problem, the present invention provides a semiconductor device comprising:
-
- an insulating film;
- wiring placed on one side surface of the insulating film;
- one or a plurality of semiconductor elements placed in such a manner as to be opposed to the one side surface of the insulating film; and
- a heat dissipation member placed on other side surface of the insulating film.
- In the present specification, the semiconductor element may be a junction type transistor, a transistor such as a field effect type transistor, a rectifier diode, a light-emitting diode, a diode such as a photodiode, a memory element, an active element such as an IC (integrated circuit).
- According to the present invention, since the heat dissipation plate is provided on the surface of the insulating film of the side opposite to the mounting surface of the semiconductor element, heat discharged by the semiconductor element and transferred through the insulating film can be dissipated by the heat dissipation plate. Therefore, since a temperature increase of the semiconductor device can be suppressed, a malfunction of the semiconductor element as a result of the increase in the temperature of the semiconductor element, which is attributed to generation of heat in operation of the semiconductor element, can be prevented.
- According to the present invention, since the heat dissipation effect can be improved, the more semiconductor elements can be mounted in the same volume of space. Thus, high-density arrangement of semiconductor elements can be performed on the insulating film.
- In one embodiment of the present invention, the heat dissipation member is placed at least at a place corresponding to the semiconductor element on the other side surface of the insulating film.
- According to the above embodiment, since the heat dissipation member is at least placed at a place corresponding to the semiconductor element on the other side surface of the insulating film, the distance between the semiconductor element as a heat source and the heat dissipation member can be reduced. Therefore, the heat dissipation performance can further be improved.
- In one embodiment of the present invention, the heat dissipation member is placed at least at a place corresponding to the wiring on the other side surface of the insulating film.
- According to the above embodiment, since the heat dissipation member is at least placed at a place corresponding to the wiring on the other side surface of the insulating film, the distance between the semiconductor element as a heat source and the heat dissipation member can be reduced. Therefore, the heat dissipation performance can further be improved.
- In one embodiment of the present invention, the heat dissipation member is composed of a plurality of portions which are discontinuous with one another.
- In the case where a plurality of semiconductor elements are placed on one side surface of the insulating film, if heat dissipation members are placed separately at a plurality of portions of the other side surface thereof corresponding to the semiconductor elements, portions which are subjected to high temperatures can selectively be cooled, and material costs can also be reduced.
- In one embodiment of the present invention, the semiconductor device includes at least two types of semiconductor elements.
- In one embodiment of the present invention, a bump electrode of the semiconductor element is connected to the wiring by Au—Sn alloy bonding.
- According to the above embodiment, since the bump electrode of the semiconductor element is connected to the wiring by Au—Sn alloy bonding, the bump electrodes can firmly be bonded to the wiring.
- In one embodiment of the present invention, a bump electrode of the semiconductor element is connected to the wiring by Au—Au alloy bonding.
- According to the above embodiment, since the bump electrode of the semiconductor element is connected to the wiring by Au—Au alloy bonding, the bump electrodes can firmly be bonded to the wiring.
- In one embodiment of the present invention, a bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive film.
- According to the above embodiment, since the bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive film, the bump electrodes can firmly be bonded to the wiring.
- In one embodiment of the present invention, a bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive paste.
- According to the above embodiment, since the bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive paste, the bump electrodes can firmly be bonded to the wiring.
- In one embodiment of the present invention, a bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive paste.
- According to the above embodiment, since the bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive paste, the bump electrodes can firmly be bonded to the wiring.
- In one embodiment of the present invention, a bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive film.
- According to the above embodiment, since the bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive film, the bump electrodes can firmly be bonded to the wiring.
- In one embodiment of the present invention, the wiring is placed directly on the one side surface of the insulating film, and the heat dissipation member is placed directly on the other side surface of the insulating film.
- According to the above embodiment, since the wiring is directly placed on the one side surface of the insulating film, and the heat dissipation member is directly placed on the other side surface of the insulating film, it is surely possible to prevent the wiring from being electrically connected to the heat dissipation member, as well as prevent the semiconductor device from being damaged.
- In one embodiment of the present invention, the wiring is placed on the one side surface of the insulating film through an adhesive, while the heat dissipation member is placed on the other side surface of the insulating film through the adhesive.
- According to the above embodiment, since the wiring is placed on the one side surface of the insulating film through an adhesive, while the heat dissipation member is placed on the other side surface of the insulating film through the adhesive, connection between the wiring and the insulating film can be made firm, and also connection between the heat dissipation member and the insulating film can be made firm.
- In one embodiment of the present invention, a passive element is placed on the insulating film.
- In this specification, the passive element may be a capacitor, a resistor or a coil.
- When the passive element is placed on the insulating film, the semiconductor is apt to be subjected to high temperatures because heat is discharged from the passive element besides the semiconductor element. This makes the significance of placing the heat dissipation member large.
- In one embodiment of the present invention, an insulating thin-film resin is applied to a part of or an entire surface of the heat dissipation member; or
-
- an insulating sheet member is pasted on a part of or an entire surface of the heat dissipation member.
- According to the above embodiment, a short circuit between the heat dissipation member and the wiring or other components can surely be prevented thanks to the thin-film resin or the insulating sheet member.
- In one embodiment of the present invention, an electronic apparatus comprising the above-stated semiconductor device and a heat dissipation component, wherein the heat dissipation member of the semiconductor device is directly or indirectly connected to the heat dissipation component.
- According to the present invention, since the semiconductor device of the above invention is equipped, the heat dissipation effect can be made large, and a failure attributable to the temperature increase can surely be prevented.
- As described above, according to the present invention, a large quantity of heat can be discharged through the heat dissipation member. Therefore, the heat dissipation performance can markedly be improved, compared with the conventional semiconductor device that only has a heat dissipation method using the heat conduction or heat dissipation from the wiring, insulating film, resin and semiconductor element.
- According to the present invention, since the semiconductor device has large heat dissipation performance, measures for the heat dissipation in electronic apparatuses on which semiconductor devices are mounted can be reduced, and semiconductor devices can be mounted on an electronic apparatus highly densely.
- When using materials having high thermal conductivity for materials of the heat dissipation member, the heat dissipation performance of the semiconductor device can be improved, and a malfunction of the semiconductor element as a result of the increase in the temperature of the semiconductor element can be prevented, and the more semiconductor elements can be mounted in the same volume of space.
- The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not intended to limit the present invention, and wherein:
-
FIGS. 1 A , B and C are views showing a semiconductor device according to a first embodiment of the present invention; -
FIGS. 2 A and B are cross sectional views showing a semiconductor device of a comparative example; -
FIGS. 3 A and B are views showing a semiconductor device according to a second embodiment of the present invention; -
FIG. 4 is a view showing a surface of an insulating film of the side opposite to the side of a semiconductor element in a semiconductor device according to a third embodiment of the present invention; -
FIGS. 5A , B, C and D are views showing a semiconductor device according to a fourth embodiment of the present invention; -
FIGS. 6 A , B and C are views showing a semiconductor device according to a fifth embodiment of the present invention; -
FIGS. 7 A , B and C are views showing an example of a method of bonding bump electrodes of a semiconductor element to wiring on an insulating film; -
FIG. 8 is a cross sectional view of an electronic apparatus according to the first embodiment; -
FIG. 9 is a cross sectional view of an electronic apparatus according to the second embodiment; -
FIGS. 10 A and B are views showing the general structure of a conventional TCP; -
FIG. 11 is a view showing the general structure of a conventional COF; and -
FIG. 12 shows an electronic apparatus in which a conventional heat dissipation metal plate is installed. - Semiconductor laser devices of the present invention will be described in detail by the embodiments below with reference to the drawings.
-
FIG. 1A , B and C are views showing a semiconductor device according to a first embodiment of the present invention. In more detail,FIG. 1A is a cross sectional view of the semiconductor device of the first embodiment.FIG. 1B is a view showing a mounting surface of a semiconductor element in the semiconductor device of the first embodiment.FIG. 1C is a view showing a surface of the side on which the semiconductor element in the semiconductor device of the first embodiment is not mounted. - As shown in
FIG. 1A , the semiconductor device includes asemiconductor element 1, an insulatingfilm 3,wiring 4, a solder resist 5, a sealingresin 6 and a heatdissipation metal plate 10 as an example of a heat dissipation member. - The
wiring 4 is placed on one side surface of the insulatingfilm 3. Thesemiconductor element 1 has amain body part 1 and bumpelectrodes 2. Thebump electrodes 2 are each connected to thewiring 4. - As shown in
FIG. 1B , the solder resist 5 is placed at a peripheral portion of thesemiconductor element 1 on the insulatingfilm 3 so as to serve as a barrier to solder when thesemiconductor element 1 is soldered to thewiring 4. The sealingresin 6 is provided in a manner so as to be in contact with the entire side surfaces of thesemiconductor element 1 as shown inFIG. 1A . The sealingresin 6 surely fixes thesemiconductor element 1 to the insulatingfilm 3. - The
heat dissipation plate 10 is placed on a surface of the insulatingfilm 3 of the side opposite to the side of thesemiconductor element 1. In more detail, as shown inFIG. 1C , a surface area of theheat dissipation plate 10 is smaller than a surface area of the insulatingfilm 3. Theheat dissipation plate 10 is placed at a place corresponding to thesemiconductor element 1 on the opposite side surface thereof. - According to the semiconductor of the first embodiment, since the
heat dissipation plate 10 is placed on the surface of the insulatingfilm 3 of the side opposite to the mounting surface of thesemiconductor element 1, heat discharged from thesemiconductor element 1 and conducted through the insulatingfilm 3 can be dissipated by theheat dissipation plate 10. Therefore, since a temperature increase of thesemiconductor device 1 can be suppressed, the occurrence of a malfunction of thesemiconductor element 1 as a result of an increase in the temperature of the semiconductor element, which is attributed to generation of heat in operation of thesemiconductor element 1, can be prevented. Further, the heat dissipation effect can be improved, and the temperature increase due to generation of heat, which is attributed to high-density mounting resulting from an increase in the number of functions and a reduction in the size of electronic apparatuses as well as an increase in the number of outputs in semiconductor elements, can surely be prevented. - According to the semiconductor device of the first embodiment, since the heat dissipation effect can be improved, the
more semiconductor elements 1 can be mounted in the same volume of space. Thus, high-density arrangement of thesemiconductor elements 1 can be performed on the insulating film. - According to the semiconductor device of the first embodiment, since the
heat dissipation plate 10 is placed at a place corresponding to thesemiconductor element 1, on a surface of the insulating film, on which thesemiconductor element 1 is not mounted. Therefore, the heat dissipation performance can efficiently be improved while keeping the production costs low. - In the
semiconductor device 1 of the first embodiment, theheat dissipation plate 10 is placed at the place corresponding to thesemiconductor element 1 on the insulatingfilm 3. Alternatively, according to the present invention, the heat dissipation plate may also be placed at places corresponding to the semiconductor element and the wiring on the insulating film. In this case, the heat dissipation performance of the semiconductor device can further be improved. - In the semiconductor device of the first embodiment, the
wiring 4 is directly placed on one side surface of the insulatingfilm 3, while theheat dissipation plate 10 is directly placed on the other side surface of the insulatingfilm 3. However, in this invention, the wiring may also be placed on one side surface of the insulating film through an adhesive, while the heat dissipation member may be placed on the other side surface of the insulating film through the adhesive. In this case, it is possible to make a firm connection between the wiring and the insulating film, as well as possible to make a firm connection between the heat dissipation member and the insulating film. - As shown in
FIG. 1 , in the case of the COF, a portion of the insulatingfilm 3 on which the semiconductor element is to be mounted is not formed with a through-hole, and thewiring 4 referred to as an inner lead, which is to be bonded to thesemiconductor element 1, is in a state in which it is backed by the insulatingfilm 3. For that reason, by providing theheat dissipation plate 10 on the opposite surface of the mounting surface of thesemiconductor element 1 as shown inFIG. 1 , a contact between thewiring 4 and theheat dissipation plate 10 can be prevented, thus making it possible to secure an electrical insulating state. - Therefore, since the heat dissipation effect can be improved by providing the
heat dissipation plate 10 on the opposite surface of the mounting surface of thesemiconductor element 1 in the COF, it is possible to prevent the occurrence of a malfunction of thesemiconductor element 1 as a result of the temperature increase of thesemiconductor element 1, which is caused by generation of heat in operation of thesemiconductor element 1, and it also becomes feasible to mount themore semiconductor elements 1 in the same volume of space. -
FIG. 2 A is a cross sectional view of a semiconductor device of a comparative example fabricated in order to compare it with the semiconductor device of the present invention. In more detail, it shows a TCP semiconductor device in which aheat dissipation plate 20 is placed. - In the case of the TCP semiconductor device, a portion of an insulating
film 23, on which asemiconductor element 21 is mounted, is formed with a through-hole in advance. Tip end portions ofwiring 24 is bonded to thesemiconductor element 1 in a state in which thewiring 24 referred to as an inner lead that is placed on the insulatingfilm 23 through an adhesive 29 protrude from the insulatingfilm 23 in a cantilever shape. Therefore, when placing theheat dissipation plate 20 on the TCP semiconductor device, there is no placing method but to place its edge portions so that they are bonded to a solder resist 25 placed on thewiring 24 as shown inFIG. 2A . - With such a placing method, however, the
wiring 24 is in contact with theheat dissipation plate 20 as shown inFIG. 2B . Thus, there is fear that an electrical short circuit occurs, resulting in the problem that the reliability of the semiconductor device is low. -
FIGS. 3A and B are views showing a semiconductor device according to a second embodiment of the present invention. In more detail,FIG. 3A is a cross sectional view of the semiconductor device of the second embodiment, andFIG. 3B is a view showing a surface of the side opposite to the side of the mounting surface of the semiconductor element in the semiconductor device of the first embodiment. - The semiconductor device of the second embodiment is the same as the semiconductor device of the first embodiment except for the shape of a
heat dissipation plate 30. - In the semiconductor device of the second embodiment, the same components as those of the semiconductor device of the first embodiment are designated by similar numerals, and description thereof is omitted. Further, in the semiconductor device of the second embodiment, description of the effect in common with that of the semiconductor device of the first embodiment is omitted, and only the constitution and effect that are different from those of the semiconductor device of the first embodiment are described.
- In the semiconductor device of the second embodiment, as shown in
FIG. 2A andFIG. 2B , theheat dissipation plate 30 larger than the insulatingfilm 3 is placed on a surface of the insulatingfilm 3 of the side opposite to the side of thesemiconductor element 1. - According to the semiconductor device of the second embodiment, since the
heat dissipation plate 30 larger than the insulatingfilm 3 is placed on the surface of the insulatingfilm 3 of the side opposite to the side of thesemiconductor element 1, the heat dissipation effect of theheat dissipation plate 30 can markedly improved, thus making it possible to surely prevent the temperature increase due to generation of heat from thesemiconductor element 1 in the COF. -
FIG. 4 is a view showing a surface of an insulatingfilm 43 of the side opposite to the side of the semiconductor element in a semiconductor device of a third embodiment. - In
FIG. 4 ,portions 41 shown in dotted lines are those whose temperatures become higher than those of the other portions within the insulatingfilm 43, by the arrangement of heat sources such as semiconductor elements etc. on the insulatingfilm 43. - As shown in
FIG. 4 , in the semiconductor device of the third embodiment, three square-shapedheat dissipation plates 40 are placed separately in a manner so as to cover the high-temperature portions 41 that are present separately on the surface of the insulatingfilm 43 of the side opposite to the side of the semiconductor element. - As in the semiconductor device of the third embodiment, if the plurality of heat dissipation plates are placed separately in a manner so as to cover the plurality of high-temperature portions that are present separately, the temperature increase of the semiconductor device can efficiently be suppressed, while keeping the production costs of the semiconductor device low.
- In the third embodiment, the number of high-temperature portions within the insulating
film 43 is three, but the number of high-temperature portions may be two or four or more. Thus, it is a matter of course that the number of heat dissipation members that are placed separately may be two or four or more. Furthermore, the shape of each of the heat dissipation members does not need to be square, and it is a matter of course that any shape, such as circular, other than square may be applicable. -
FIGS. 5A , B, C and D are views showing a semiconductor device according to a fourth embodiment. In more detail,FIG. 5A is a cross sectional view of the semiconductor device of the fourth embodiment,FIG. 5B is a top plan view of the side of the semiconductor element in the semiconductor device of the fourth embodiment, andFIG. 5C is a top plan view of the side opposite to the side of the semiconductor element in the semiconductor device of the fourth embodiment. - The semiconductor device of the fourth embodiment is the same as the semiconductor device of the first embodiment except for the shape of a
heat dissipation plate 50. - In the semiconductor device of the fourth embodiment, the same components as those of the semiconductor device of the first embodiment are designated by similar numerals, and description thereof is omitted. Further, in the semiconductor device of the fourth embodiment, description of the effect in common with that of the semiconductor device of the first embodiment is omitted, and only the constitution and effect that are different from those of the semiconductor device of the first embodiment are described.
- In the semiconductor device of the fourth embodiment, as shown in
FIG. 5C , theheat dissipation plate 50 has a shape corresponding to the shape of heat dissipation components in the semiconductor device on the insulatingfilm 3. Theheat dissipation plate 50 is placed at a place of a surface of the insulatingfilm 3 of the side opposite to the side of thesemiconductor element 1 in the semiconductor device. -
End portions 53 of theheat dissipation plate 50 are connected to the heat dissipation components placed on the side of the semiconductor element in the semiconductor device. - According to the semiconductor device of the fourth embodiment, since the
heat dissipation plate 50 is directly connected to the heat dissipation components, heat can efficiently be transferred to theheat dissipation plate 50 by heat conduction, so that the conductive heat can be discharged from a surface of theheat dissipation plate 50. Therefore, a temperature increase of the semiconductor device due to generation of heat from the COF semiconductor element can further be efficiently prevented. - In the semiconductor device of the fourth embodiment, the shape of the
heat dissipation plate 50 is such that it corresponds to the shape of the heat dissipation components in the semiconductor device and that theheat dissipation plate 50 can be connected to the heat dissipation components directly. In the present invention, the shape of theheat dissipation plate 57 is such that it corresponds to the shape of the high-temperature portions on the insulatingfilm 3 and that theheat dissipation plate 57 can be connected to the heat dissipation components directly through theirend portions 58 as shown inFIG. 5D . In this case, the shape of theheat dissipation plate 57 can be made simple. Therefore, the heat dissipation performance can be improved while keeping the production costs low. -
FIGS. 6A , B and C are views showing a semiconductor device according to a fifth embodiment. Describing it in more detail,FIG. 6A is a cross sectional view of the semiconductor device of the fifth embodiment,FIG. 6B is a view showing a surface of an insulating film of the side opposite to the side of the semiconductor element in the semiconductor device of the fifth embodiment during the production.FIG. 6C is a view showing a surface of the insulating film of the side opposite to the side of the semiconductor element in the semiconductor device of the fifth embodiment. - The semiconductor device of the fifth embodiment is the same as the semiconductor device of the fourth embodiment except that an insulating thin-
film resin 66 is placed on the surface of the insulatingfilm 3 of the side opposite to the side of the semiconductor element and that theheat dissipation plate 50 is placed on this surface. - In the semiconductor device of the fifth embodiment, the same components as those of the semiconductor device of the fourth embodiment are designated by similar numerals, and description thereof is omitted. Further, in the semiconductor device of the fifth embodiment, description of the effect in common with that of the semiconductor device of the fourth embodiment is omitted, and only the constitution and effect that are different from those of the semiconductor device of the fourth embodiment are described.
- In the semiconductor device of the fifth embodiment, an insulating thin-
film resin 66 is applied to a place of theheat dissipation plate 50 where a contact with wiring or other components is concerned. - In the semiconductor device of the fifth embodiment, since the insulating thin-
film resin 66 is applied to the place of theheat dissipation plate 50 where the contact with the wiring or other components is concerned, a short circuit between theheat dissipation plate 50 and the wiring or other components can be prevented. Therefore, the element characteristics and life reliability of the semiconductor element can be improved. - In the semiconductor device of the fifth embodiment, the insulating thin-
film resin 66 is placed on a part of theheat dissipation plate 50 as shown inFIG. 6C . In the present invention, an insulating thin-film resin may also be placed on the entire heat dissipation member. Although the thin-film resin 66 is placed on the part of theheat dissipation plate 50 in the fifth embodiment, an insulating sheet may also be pasted on a part of or the entire heat dissipation member. - In the first to fifth embodiments, only one
semiconductor element 1 is placed on the insulatingfilm 3. In the present invention, a plurality of semiconductor elements (e.g., an LED and a transistor) may be placed on the insulating film. If required, a passive element may be placed in addition to the semiconductor element. - In the first to fifth embodiments, the heat dissipation plate is placed on the insulating
film 3. Methods of placing the heat dissipation plate on the insulatingfilm 3 include a method of punching out a thin film material such as metal with a die and then pasting it on the insulating film through an adhesive, and a method of pasting an insulating film and a thin film such as metal without using an adhesive, followed by forming a pattern according to the subtractive method. - Other methods include a method of pasting an insulating film and a thin film such as metal through an adhesive, followed by forming a pattern according to the subtractive method, a method of forming a metal pattern on an insulating film according to the semi additive method.
- Use of these methods makes it possible to easily place a heat dissipation plate of any shape including a polygonal shape, a circular shape, an elliptical shape or the like on the insulating film.
-
FIGS. 7A , B and C are views showing an example of a method of bonding bump electrodes of a semiconductor element to wiring on an insulating film. Thebump electrodes 72 of thesemiconductor element 71 shown inFIG. 7 are made of metal. - The method of bonding the
bump electrodes 72 to thewiring 74 on the insulatingfilm 73 will hereinafter be described usingFIGS. 7A , B and C. - First, as shown in
FIG. 7A , thesemiconductor element 71 is positioned with respect to the insulatingfilm 73 so that the tin-platedwiring 74 and thegold bump electrodes 72 on thesemiconductor element 71 are opposed to each other through an ACF (anisotropic conductive adhesive film). - Thereafter, a surface of the
semiconductor element 71 on the side opposite to the side of thebump electrodes 72 is pressed using a pressingmember 77, followed by heating for a certain period of time so that thebump electrodes 72 and thewiring 74 is bonded to each other as shown inFIG. 7B . In this manner, thebump electrodes 72 are firmly bonded to thewiring 74. - After that, as shown in
FIG. 7C , a sealingresin 76 is injected into a gap formed between thesemiconductor element 71 and the insulatingfilm 73 so that the moisture resistance and mechanical strength are improved. In this manner, bonding thebump electrodes 72 to thewiring 74 on the insulatingfilm 73 is completed. - In
FIGS. 7A , B and C,reference numeral 75 denotes a solder resist. As shown inFIGS. 7A , B and C, if the solder resist 75 is placed on a portion other than a portion where thebump electrodes 72 are bonded to thewiring 74 on the insulatingfilm 73, conductive foreign matter is in contact with thewiring 74, so that the occurrence of a short circuit in the semiconductor device can surely be prevented. - As in the semiconductor device shown in
FIGS. 7A , B and C, when thewiring 74 on the insulatingfilm 73 is positioned with respect to thebump electrode 71 on thesemiconductor element 71 through the ACF so that they are opposed to each other, the sealingresin 76 may be omitted. - In the semiconductor device shown in
FIGS. 7A , B and C, thewiring 74 is tin-plated. In the present invention, the wiring may be gold-plated. Then, the bump electrodes and the wiring may firmly be bonded to each other using Au—An alloy. - In the semiconductor device shown in
FIGS. 7A , B and C, thewiring 74 on the insulatingfilm 73 and thebump electrodes 72 on thesemiconductor element 71 are positioned through the ACF so that they are opposed to each other. In the present invention, the wiring on the insulating film and the bump electrodes on the semiconductor element may be positioned so that they are opposed to each other through an ACP (anisotropic conductive adhesive paste), NCP (nonconductive adhesive paste) or nonconductive adhesive film. In these cases, the sealing resin can be omitted as in the case where the ACF is used. -
FIG. 8 is a cross sectional view of an electronic apparatus according to a first embodiment equipped with the semiconductor device of the present invention. - This electronic apparatus includes a
housing 89, aheat dissipation component 84 constructing a part of an outer wall of the electronic apparatus, and asemiconductor device 80 of the present invention placed within the electronic apparatus. - The
electronic apparatus 80 has asemiconductor element 81, an insulatingfilm 83, a sealingresin 86 and aheat dissipation plate 87. - As shown in
FIG. 8 , in the electronic apparatus of the first embodiment, a large part of theheat dissipation plate 87 is interposed between the insulatingfilm 83 and theheat dissipation component 84. - According to the electronic apparatus of the first embodiment, the
heat dissipation plate 87 of thesemiconductor device 80 can also efficiently discharge heat in addition to theheat dissipation component 84. Therefore, the temperature increase of the electronic apparatus can further be suppressed. - In the electronic apparatus of the first embodiment, the
heat dissipation component 84 is provided at a portion other than thesemiconductor device 80. In the present invention, since the semiconductor device of the present invention is provided with measures for heat dissipation, providing a heat dissipation component at the portion other than the semiconductor device is not necessarily required. By omitting the heat dissipation component at the portion other than the portion of the semiconductor device, the production costs of electronic apparatuses can be reduced, and electronic apparatuses can be made compact. -
FIG. 9 is a cross sectional view of an electronic apparatus according to a second embodiment equipped with the semiconductor device of the present invention. - In the electronic apparatus of the second embodiment, description of the effect in common with that of the electronic apparatus of the first embodiment is omitted, and only the constitution and effect that are different from those of the semiconductor device of the first embodiment are described.
- This electronic apparatus includes a
housing 99, aheat dissipation component 94 constructing a part of an outer wall of the electronic apparatus, and asemiconductor device 90 of the present invention placed within the electronic apparatus. - The
semiconductor device 90 includes asemiconductor element 91, an insulatingfilm 93, a sealingresin 96 and aheat dissipation plate 97. - As shown in
FIG. 9 , in the electronic apparatus of the second embodiment, a portion of theheat dissipation plate 97 corresponding to thesemiconductor device 91 constructs a part of an outer wall of the electronic apparatus. - According to the electronic apparatus of the second embodiment, since the portion of the
heat dissipation plate 97 corresponding to thesemiconductor element 91 constructs the part of the outer wall of the electronic apparatus, heat discharged from thesemiconductor element 91 can efficiently be discharged to the outside space. Therefore, a temperature increase in the electronic apparatus can further be suppressed. - Embodiments of the invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.
Claims (16)
1. A semiconductor device comprising:
an insulating film;
wiring placed on one side surface of the insulating film;
one or a plurality of semiconductor elements placed in such a manner as to be opposed to the one side surface of the insulating film; and
a heat dissipation member placed on other side surface of the insulating film.
2. The semiconductor device as claimed in claim 1 , wherein
the heat dissipation member is placed at least at a place corresponding to the semiconductor element on the other side surface of the insulating film.
3. The semiconductor device as claimed in claim 2 , wherein
the heat dissipation member is placed at least at a place corresponding to the wiring on the other side surface of the insulating film.
4. The semiconductor device as claimed in claim 1 , wherein
the heat dissipation member is composed of a plurality of portions which are discontinuous with one another.
5. The semiconductor device as claimed in claim 1 , wherein
the semiconductor device includes at least two types of semiconductor elements.
6. The semiconductor device as claimed in claim 1 , wherein
a bump electrode of the semiconductor element is connected to the wiring by Au—Sn alloy bonding.
7. The semiconductor device as claimed in claim 1 , wherein
a bump electrode of the semiconductor element is connected to the wiring by Au—Au alloy bonding.
8. The semiconductor device as claimed in claim 1 , wherein
a bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive film.
9. The semiconductor device as claimed in claim 1 , wherein
a bump electrode of the semiconductor element is connected to the wiring through an anisotropic conductive adhesive paste.
10. The semiconductor device as claimed in claim 1 , wherein
a bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive paste.
11. The semiconductor device as claimed in claim 1 , wherein
a bump electrode of the semiconductor element is connected to the wiring through a non-conductive adhesive film.
12. The semiconductor device as claimed in claim 1 , wherein
the wiring is placed directly on the one side surface of the insulating film, and the heat dissipation member is placed directly on the other side surface of the insulating film.
13. The semiconductor device as claimed in claim 1 , wherein
the wiring is placed on the one side surface of the insulating film through an adhesive, while the heat dissipation member is placed on the other side surface of the insulating film through the adhesive.
14. The semiconductor device as claimed in claim 1 , wherein
a passive element is placed on the insulating film.
15. The semiconductor device as claimed in claim 1 , wherein
an insulating thin-film resin is applied to a part of or an entire surface of the heat dissipation member; or
an insulating sheet member is pasted on a part of or an entire surface of the heat dissipation member.
16. An electronic apparatus comprising the semiconductor device of claim 1 and a heat dissipation component, wherein the heat dissipation member of the semiconductor device is directly or indirectly connected to the heat dissipation component.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPP2004-292435 | 2004-10-05 | ||
JP2004292435A JP4014591B2 (en) | 2004-10-05 | 2004-10-05 | Semiconductor device and electronic equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060071325A1 true US20060071325A1 (en) | 2006-04-06 |
Family
ID=36124726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/241,972 Abandoned US20060071325A1 (en) | 2004-10-05 | 2005-10-04 | Semiconductor device and electronic apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060071325A1 (en) |
JP (1) | JP4014591B2 (en) |
KR (1) | KR20060051982A (en) |
CN (1) | CN100385648C (en) |
TW (1) | TWI302736B (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN100385648C (en) | 2008-04-30 |
CN1767177A (en) | 2006-05-03 |
KR20060051982A (en) | 2006-05-19 |
JP2006108356A (en) | 2006-04-20 |
JP4014591B2 (en) | 2007-11-28 |
TWI302736B (en) | 2008-11-01 |
TW200629524A (en) | 2006-08-16 |
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