JP5169800B2 - Electronic equipment - Google Patents

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JP5169800B2
JP5169800B2 JP2008325350A JP2008325350A JP5169800B2 JP 5169800 B2 JP5169800 B2 JP 5169800B2 JP 2008325350 A JP2008325350 A JP 2008325350A JP 2008325350 A JP2008325350 A JP 2008325350A JP 5169800 B2 JP5169800 B2 JP 5169800B2
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substrate
heat
electronic component
electronic device
heat radiating
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JP2010147382A (en
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重信 稲葉
幸宏 前田
真治 太田
伸一 広瀬
大佳 國枝
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Description

本発明は、第１の基板の上に第２の基板を搭載して熱的に接続し、第２の基板の上に放熱板を搭載し当該放熱板と第２の基板に搭載された電子部品とを熱的に接続してなる電子装置に関する。   In the present invention, a second substrate is mounted on a first substrate and thermally connected thereto, a heat sink is mounted on the second substrate, and the heat sink and the electrons mounted on the second substrate are mounted. The present invention relates to an electronic device formed by thermally connecting components.

従来より、フリップチップ実装により、マザーボードの上に半導体チップを搭載し、この半導体チップを覆うように放熱板を設け、放熱板の外周部をマザーボードにはんだ付けして熱的に接続してなる電子装置が提案されている（特許文献１参照）。   Conventionally, an electronic device in which a semiconductor chip is mounted on a motherboard by flip chip mounting, a heat sink is provided so as to cover the semiconductor chip, and the outer periphery of the heat sink is soldered to the motherboard and thermally connected An apparatus has been proposed (see Patent Document 1).

上記特許文献１に記載の電子装置においては、放熱板をマザーボードに表面実装することで放熱板からマザーボードへの放熱性の向上を実現している。しかしながら、この電子装置では、フリップチップ接合により、半導体チップを直接マザーボードに実装しているため、狭ピッチな電極配置に対応する高価な基板をマザーボードに使用する必要があり、大幅なコストアップとなる。   In the electronic device described in Patent Document 1, heat dissipation from the heat sink to the motherboard is improved by surface mounting the heat sink on the motherboard. However, in this electronic device, since the semiconductor chip is directly mounted on the mother board by flip chip bonding, it is necessary to use an expensive board corresponding to the electrode arrangement with a narrow pitch on the mother board, which greatly increases the cost. .

この問題に対応して、特許文献２に記載の電子装置が提案されている。このものは、第１の基板としてのマザーボードと、一面側に電子部品が設けられ他面側がマザーボードに対向した状態でマザーボードにはんだによって熱的に接続された第２の基板としてのインターポーザと、インターポーザの一面側に設けられ電子部品と熱的に接続された放熱板とを備えている。   In response to this problem, an electronic device described in Patent Document 2 has been proposed. This includes a mother board as a first board, an interposer as a second board that is provided with electronic components on one side and is thermally connected to the motherboard by solder with the other side facing the motherboard, and an interposer And a heat radiating plate provided on one surface side and thermally connected to the electronic component.

この場合、上記電極配置の問題については、インターポーザにより解消される。また、電子部品にて発生する熱は、インターポーザを介して筐体などに放熱されるとともに、インターポーザから間接的にマザーボードに放熱されるという両面放熱構造が形成されており、大幅なコストアップが回避される。
特開平８−１０７１６４号公報 特開２００４−３１２０３４号公報 In this case, the problem of the electrode arrangement is solved by the interposer. In addition, the heat generated by the electronic components is dissipated to the chassis, etc. via the interposer, and the double-sided heat dissipation structure is formed to dissipate heat indirectly from the interposer to the motherboard, avoiding significant cost increases. Is done.
JP-A-8-107164 JP 2004-312034 A

しかし、上記特許文献２に記載されている電子装置では、通常は樹脂基板よりなるインターポーザという伝熱には不利な物質を介して、間接的にマザーボードに放熱しているために、マザーボード側へは十分な放熱ができないという問題がある。   However, in the electronic device described in Patent Document 2 above, since heat is indirectly radiated to the mother board through a material that is disadvantageous for heat transfer, usually an interposer made of a resin substrate, There is a problem that sufficient heat dissipation is not possible.

本発明は、上記問題に鑑みてなされたものであり、第１の基板上に第２の基板を搭載し、第２の基板上に電子部品を搭載し、さらに第２の基板上にて電子部品と放熱板とを熱的に接続してなる電子装置において、第２の基板を介することなく、放熱板から第１の基板に直接的に放熱できるようにすることを目的とする。   The present invention has been made in view of the above problems. A second substrate is mounted on a first substrate, an electronic component is mounted on the second substrate, and an electronic device is mounted on the second substrate. An object of the present invention is to provide an electronic device in which a component and a heat sink are thermally connected so that heat can be directly radiated from the heat sink to the first board without passing through the second board.

上記目的を達成するため、請求項１に記載の発明においては、放熱板（４０）の周辺部に、第２の基板（２０）における放熱板（４０）が配置されている一面側から第１の基板（１０）側の他面側まで延設され、当該他面側にて直接、第１の基板（１０）に熱的に接続された延設部（７０）を設け、
第２の基板（２０）には一面から他面まで貫通する貫通穴（２１）が設けられており、延設部（７０）は、放熱板（４０）の周辺部を第２の基板（２０）側に突出させたものであって先端部が貫通穴（２１）に挿入されて第２の基板（２０）の他面側に露出する突出部（４１）と、第２の基板（２０）の他面側にて突出部（４１）の先端部と第１の基板（１０）との間に介在し、これら両者を熱的に接続する金属製の第１の接続部材（５０）とよりなるものであり、さらに、第１の基板（１０）と第２の基板（２０）との間であって前記電子部品（３０）の直下には、金属製の第２の接続部材（５０）が設けられており、電子部品（３０）にて発生する熱は第２の基板（２０）から第２の接続部材（５０）を介して第１の基板（１０）に伝わるようになっていることを特徴としている。 In order to achieve the above object, in the first aspect of the present invention, the first side from the side where the heat radiating plate (40) of the second substrate (20) is disposed around the heat radiating plate (40). An extended portion (70) extending to the other surface side of the substrate (10) side and directly connected to the first substrate (10) directly on the other surface side,
The second substrate (20) is provided with a through-hole (21) penetrating from one surface to the other surface, and the extending portion (70) extends from the periphery of the heat sink (40) to the second substrate (20). ) Projecting portion (41) that is projected to the other side of the second substrate (20) by being inserted into the through hole (21), and the second substrate (20). And a metal first connecting member (50) that is interposed between the tip of the projecting portion (41) and the first substrate (10) on the other surface side and thermally connects both of them. Furthermore, between the 1st board | substrate (10) and the 2nd board | substrate (20) and just under the said electronic component (30), it is the metal 2nd connection member (50). The heat generated in the electronic component (30) is transferred from the second substrate (20) to the first substrate (10) via the second connection member (50). It is characterized in that that is so.

それによれば、電子部品（３０）にて発生する熱は、放熱板（４０）から延設部（７０）を通って第１の基板（１０）に伝わり、そこで放熱されるから、第２の基板（２０）を介することなく、放熱板（４０）から第１の基板（１０）に直接的に放熱することが可能となる。   According to this, the heat generated in the electronic component (30) is transmitted from the heat radiating plate (40) to the first substrate (10) through the extending portion (70), and is radiated there. Heat can be directly radiated from the heat radiating plate (40) to the first substrate (10) without going through the substrate (20).

また、請求項１に記載の発明によれば、放熱板（４０）の一部である突出部（４１）が、接続部材（５０）によって、実質的に直接、第１の基板（１０）に熱的に接続された構成となり、さらなる放熱性の向上が期待できる。
ここで、請求項２に記載の発明のように、請求項１に記載の電子装置においては、第1の接続部材（５０）と第２の接続部材（５０）とは、同じものとすることができる。 According to the first aspect of the present invention , the protrusion (41) which is a part of the heat sink (40) is substantially directly connected to the first substrate (10) by the connecting member (50). The structure is thermally connected, and further improvement in heat dissipation can be expected.
Here, as in the invention described in claim 2, in the electronic device described in claim 1, the first connecting member (50) and the second connecting member (50) are the same. Can do.

また、第２の基板（２０）に、その一面から他面まで貫通する貫通穴（２１）を設け、延設部（７０）を、放熱板（４０）の周辺部を第２の基板（２０）側に突出させたものであって先端部が貫通穴（２１）に対向する突出部（４１）と、貫通穴（２１）に充填され突出部（４１）と熱的に接続された熱伝導性部材（２２）と、第２の基板（２０）の他面側にて熱伝導性部材（２２）と第１の基板（１０）との間に介在し、これら両者を熱的に接続する接続部材（５０）とにより構成してもよい。 Further , the second substrate (20) is provided with a through hole (21) penetrating from one surface to the other surface, the extending portion (70) is provided, and the peripheral portion of the heat sink (40) is provided on the second substrate (20). ) Projecting portion (41) whose tip is opposed to the through hole (21), and heat conduction filled in the through hole (21) and thermally connected to the projecting portion (41). Between the heat conductive member (22) and the first substrate (10) on the other surface side of the conductive member (22) and the second substrate (20), and these two members are thermally connected. You may comprise with a connection member (50).

それによれば、放熱板（４０）の突出部（４１）が第２の基板（２０）を貫通する構成を採用することなく、放熱板（４０）からの熱を、延設部（７０）から直接第２の基板（２０）に伝えることが可能となり、また、放熱板（４０）を第２の基板（２０）に表面実装部品と同様の方法で搭載できる。   According to this, the heat from the heat radiating plate (40) can be transferred from the extending portion (70) without adopting a configuration in which the protruding portion (41) of the heat radiating plate (40) penetrates the second substrate (20). It is possible to transmit directly to the second substrate (20), and the heat radiating plate (40) can be mounted on the second substrate (20) in the same manner as the surface mount component.

また、第２の基板（２０）に、その一面から他面まで貫通する貫通穴（２１）を設け、延設部（７０）を、放熱板（４０）の周辺部を第２の基板（２０）側に突出させたものであって先端部が貫通穴（２１）に挿入されて第２の基板（２０）の他面側に突出する突出部（４１）よりなるものとし、突出部（４１）の先端部が、第１の基板（１０）に設けられた貫通穴（１２）に挿入されて第１の基板（１０）を貫通した状態で、第１の基板（１０）に熱的に接続されたものとしてもよい。 Further , the second substrate (20) is provided with a through hole (21) penetrating from one surface to the other surface, the extending portion (70) is provided, and the peripheral portion of the heat sink (40) is provided on the second substrate (20). ) Side, and the tip end portion is inserted into the through hole (21) and is formed of a protrusion portion (41) protruding to the other surface side of the second substrate (20). ) Is inserted into a through hole (12) provided in the first substrate (10) and penetrates the first substrate (10), and is thermally applied to the first substrate (10). It may be connected.

それによれば、放熱板（４０）から第１の基板（１０）における第２の基板（２０）側の面とは反対側の面にまで直接放熱することができる。   According to this, heat can be directly radiated from the heat radiating plate (40) to the surface of the first substrate (10) opposite to the surface on the second substrate (20) side.

また、延設部（７０）を、放熱板（４０）の周辺部を第２の基板（２０）の端部まで延ばし当該端部にて第２の基板（２０）の他面に向かって折り返した形状を有する折り返し部（４２）と、第２の基板（２０）の他面側にて折り返し部（４２）と第１の基板（１０）との間に介在し、これら両者を熱的に接続する金属製の接続部材（５０）とにより構成されたものとしてもよい。 Further , the extending portion (70) is extended toward the other surface of the second substrate (20) by extending the peripheral portion of the heat radiating plate (40) to the end portion of the second substrate (20). Between the folded portion (42) having the curved shape and the folded portion (42) and the first substrate (10) on the other surface side of the second substrate (20). It may be configured by a metal connection member (50) to be connected.

それによれば、第２の基板（２０）に対して、当該第２の基板の一面から他面まで貫通する貫通穴を設けることなく、延設部（７０）を第１の基板（１０）に熱的に接続することができる。   According to this, the extending portion (70) is formed in the first substrate (10) without providing a through hole penetrating from one surface of the second substrate to the other surface of the second substrate (20). Can be connected thermally.

また、放熱板（４０）の周辺部を、第２の基板（２０）の端部よりはみ出させ、このはみ出している部位にて第１の基板（１０）まで突出する突出部（４１）を設け、延設部（７０）は、突出部（４１）と、この突出部（４１）と第１の基板（１０）とを熱的に接続するはんだ（５０）とよりなるものとしてもよい。 Further, the peripheral portion of the heat plate discharge (40), thereby protrude from the end portion of the second substrate (20), projection projecting at the site to which this protruding to the first substrate (10) and (41) The provided and extended portion (70) may be composed of a protruding portion (41) and solder (50) that thermally connects the protruding portion (41) and the first substrate (10).

それによれば、第２の基板（２０）に対して、当該第２の基板の一面から他面まで貫通する貫通穴を設けることなく、延設部（７０）を第１の基板（１０）に熱的に接続することができる。   According to this, the extending portion (70) is formed in the first substrate (10) without providing a through hole penetrating from one surface of the second substrate to the other surface of the second substrate (20). Can be connected thermally.

なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１は、本発明の第１実施形態に係る電子装置Ｓ１の概略構成を示す図であり、図１において（ａ）は概略断面図、（ｂ）は（ａ）中の概略上面図である。なお、図１（ｂ）では、放熱板４０を透過して示してある。 (First embodiment)
FIG. 1 is a diagram showing a schematic configuration of an electronic device S1 according to a first embodiment of the present invention, where (a) is a schematic sectional view and (b) is a schematic top view in (a). . In addition, in FIG.1 (b), the heat sink 40 is permeate | transmitted and shown.

本実施形態の電子装置Ｓ１は、大きくは、第１の基板１０と、この第１の基板１０に搭載された第２の基板２０と、この第２の基板２０に搭載された電子部品３０と、この電子部品３０と熱的に接続された放熱板４０とを備えて構成されている。   The electronic device S1 of the present embodiment is broadly divided into a first substrate 10, a second substrate 20 mounted on the first substrate 10, and an electronic component 30 mounted on the second substrate 20. The electronic component 30 and the heat radiating plate 40 thermally connected are provided.

第１の基板１０は、いわゆるマザーボードとして構成されるものであり、樹脂基板、セラミック基板、あるいはリードフレームなどである。ここでは、第１の基板１０は、第１の基板１０の板面方向に延びるように配置された銅などよりなる内層配線１０ａを内部に有する樹脂基板である。   The first substrate 10 is configured as a so-called mother board, and is a resin substrate, a ceramic substrate, a lead frame, or the like. Here, the first substrate 10 is a resin substrate having an inner layer wiring 10 a made of copper or the like disposed so as to extend in the plate surface direction of the first substrate 10.

第２の基板２０は、いわゆるインターポーザとして構成されるものであり、樹脂基板、セラミック基板、あるいはリードフレームなどである。ここでは、第２の基板２０も、第２の基板２０の板面方向に延びるように配置された銅などよりなる内層配線２０ａを内部に有する樹脂基板である。   The second substrate 20 is configured as a so-called interposer, and is a resin substrate, a ceramic substrate, a lead frame, or the like. Here, the second substrate 20 is also a resin substrate having an inner layer wiring 20 a made of copper or the like disposed so as to extend in the plate surface direction of the second substrate 20.

この第２の基板２０の一面（図１（ａ）における上面）側に、電子部品３０が設けられており、第２の基板２０の他面（図１（ａ）における下面）側が第１の基板１０の一面（図１（ａ）における上面）に対向した状態となっている。そして、この状態で、第２の基板２０は、第１の基板１０の一面上に搭載されている。   An electronic component 30 is provided on one surface (upper surface in FIG. 1A) of the second substrate 20, and the other surface (lower surface in FIG. 1A) side of the second substrate 20 is the first. It is in a state of facing one surface of the substrate 10 (the upper surface in FIG. 1A). In this state, the second substrate 20 is mounted on one surface of the first substrate 10.

ここで、第１の基板１０の一面（図１（ａ）における上面）と第２の基板２０の他面との間には、熱的接続部材としてのはんだ５０が介在しており、第１の基板１０と第２の基板２０とは、このはんだ５０を介して互いに熱的に接続されている。   Here, a solder 50 as a thermal connection member is interposed between one surface of the first substrate 10 (the upper surface in FIG. 1A) and the other surface of the second substrate 20, and the first The substrate 10 and the second substrate 20 are thermally connected to each other through the solder 50.

このはんだ５０としては、一般的な鉛フリーはんだや共晶はんだなどを採用することができ、ここでは、複数個のはんだバンプとして構成されている。なお、これら両基板１０、２０を熱的に接続する熱的接続部材としては、はんだ５０以外にも、金属バンプや導電性接着剤などであってもよい。   As this solder 50, general lead-free solder, eutectic solder or the like can be adopted, and here, it is configured as a plurality of solder bumps. In addition to the solder 50, a metal bump, a conductive adhesive, or the like may be used as the thermal connection member that thermally connects both the substrates 10 and 20.

第２の基板２０の一面側に設けられている電子部品３０としては、ＩＣチップ、フリップチップ、ダイオードなどの表面実装部品であって、駆動時に発熱するものであれば、特に限定されない。この電子部品３０は、第２の基板２０に対して、はんだや導電性接着剤などにより電気的・機械的に接合されるものである。   The electronic component 30 provided on the one surface side of the second substrate 20 is not particularly limited as long as it is a surface-mounted component such as an IC chip, a flip chip, or a diode and generates heat during driving. The electronic component 30 is joined to the second substrate 20 electrically and mechanically by solder, conductive adhesive, or the like.

ここでは、電子部品３０としては、ＩＣ素子を示している。また、ここでは、電子部品３０は、一般的なはんだ３１およびエポキシ樹脂などよりなる一般的なアンダーフィル３２を介して、第２の基板２０の一面上に搭載され、第２の基板２０と電気的・機械的に接続されている。   Here, an IC element is shown as the electronic component 30. Here, the electronic component 30 is mounted on one surface of the second substrate 20 via a general underfill 32 made of a general solder 31 and an epoxy resin, and is electrically connected to the second substrate 20. Mechanically and mechanically connected.

このように、図１に示される電子装置Ｓ１では、電子部品３０を第２の基板２０にフリップチップ接合（ＦＣ）したものに、複数のバンプとしてのはんだ５０を取り付けてＦＣ−ＢＧＡ（ボールグリッドアレイ）を構成し、これを第１の基板１０の一面に搭載し接合している。   As described above, in the electronic device S1 shown in FIG. 1, the electronic component 30 is flip-chip bonded (FC) to the second substrate 20, and the solder 50 as a plurality of bumps is attached to the FC-BGA (ball grid). An array), which is mounted on one surface of the first substrate 10 and bonded thereto.

また、第２の基板２０の一面上には、電子部品３０を覆う形で、放熱板４０が設けられている。この放熱板４０は、銅やアルミニウム、鉄などよりなる板状のヒートシンクとして構成されている。図１（ｂ）では、矩形板状の第１の基板１０が示されており、第２の基板２０はそれよりも一回り小さい矩形板状をなし、放熱板４０は、さらに一回り小さい矩形板状のものとして示されている。   In addition, a heat radiating plate 40 is provided on one surface of the second substrate 20 so as to cover the electronic component 30. The heat radiating plate 40 is configured as a plate-shaped heat sink made of copper, aluminum, iron or the like. FIG. 1B shows a rectangular plate-shaped first substrate 10, the second substrate 20 has a rectangular plate shape that is slightly smaller than that, and the heat radiating plate 40 has a rectangular shape that is slightly smaller. Shown as a plate.

この放熱板４０と電子部品３０との間には、放熱ゲル６０が介在されている。この放熱ゲル６０は、シリコーンゲルなどの電気絶縁性を有し且つ熱伝導性に優れたゲルよりなる一般的なものであり、この放熱ゲル６０を介して電子部品３０と放熱板４０とは、熱的に接続されている。   A heat radiating gel 60 is interposed between the heat radiating plate 40 and the electronic component 30. The heat dissipating gel 60 is a general one made of a gel having an electrical insulating property such as silicone gel and having excellent heat conductivity. Through the heat dissipating gel 60, the electronic component 30 and the heat dissipating plate 40 are Thermally connected.

このような構成において、本実施形態の電子装置Ｓ１では、放熱板４０の周辺部には、第２の基板２０の一面側から他面側まで延設され、当該他面側にて直接、第１の基板１０に熱的に接続された延設部７０が備えられている。ここでは、延設部７０は、矩形状をなす放熱板４０の四隅部に設けられている。   In such a configuration, in the electronic device S1 of the present embodiment, the peripheral portion of the heat dissipation plate 40 is extended from one surface side of the second substrate 20 to the other surface side, and directly on the other surface side. An extending portion 70 that is thermally connected to one substrate 10 is provided. Here, the extending portions 70 are provided at the four corners of the heat radiating plate 40 having a rectangular shape.

本実施形態では、第２の基板２０のうち放熱板４０の延設部７０に対向する部位に、当該第２の基板２０の厚さ方向に貫通する穴、すなわち第２の基板２０の一面から他面まで貫通する貫通穴２１が設けられている。そして、延設部７０は、この貫通穴２１を通って第２の基板２０の一面側から他面側まで延設されたものとされている。この貫通穴２１は、プレス加工やエッチングなどにより形成される。   In the present embodiment, a hole penetrating in the thickness direction of the second substrate 20, that is, from one surface of the second substrate 20, in a portion of the second substrate 20 that faces the extending portion 70 of the heat sink 40. A through hole 21 penetrating to the other surface is provided. The extending portion 70 extends from the one surface side of the second substrate 20 to the other surface side through the through hole 21. The through hole 21 is formed by pressing or etching.

ここでは、放熱板４０の四隅部には、当該四隅部を第２の基板２０側に突出させた突出部４１が形成されている。このような突出部４１は、プレス加工やエッチングなどにより形成される。そして、この突出部４１の先端部は、第２の基板２０の一面側から貫通穴２１に挿入されて第２の基板２０の他面側に露出している。   Here, projecting portions 41 are formed at the four corners of the heat radiating plate 40 by projecting the four corners toward the second substrate 20. Such a protrusion 41 is formed by pressing or etching. The leading end portion of the protrusion 41 is inserted into the through hole 21 from the one surface side of the second substrate 20 and exposed to the other surface side of the second substrate 20.

また、第２の基板２０の他面側では、突出部４１の先端部と第１の基板１０の一面との間に、金属製の接続部材５０が介在している。ここでは、接続部材５０は、第１及び第２の基板１０、２０を接続する上記はんだ５０と同じはんだ５０であり、この接続部材としてのはんだ５０を介して、突出部４１の先端部と第１の基板１０とが、熱的に接続されている。   Further, on the other surface side of the second substrate 20, a metal connection member 50 is interposed between the tip end portion of the protruding portion 41 and one surface of the first substrate 10. Here, the connecting member 50 is the same solder 50 as the solder 50 that connects the first and second substrates 10 and 20, and the tip of the protruding portion 41 and the second solder 50 are connected via the solder 50 as the connecting member. 1 substrate 10 is thermally connected.

このように、本実施形態では、放熱板４０の周辺部にて突出し第２の基板２０を厚さ方向に貫通する突出部４１と、この突出部４１と第１の基板１０とを熱的に接続するはんだ５０とにより、延設部７０が構成されている。   As described above, in the present embodiment, the protrusion 41 that protrudes in the peripheral portion of the heat sink 40 and penetrates the second substrate 20 in the thickness direction, and the protrusion 41 and the first substrate 10 are thermally connected. The extending portion 70 is constituted by the solder 50 to be connected.

このような本実施形態の電子装置Ｓ１における放熱経路について、図２を参照して述べる。図２は、本電子装置Ｓ１における放熱経路を示す図である。図２では、各矢印によって熱伝導の方向が示されている。   A heat dissipation path in the electronic apparatus S1 of this embodiment will be described with reference to FIG. FIG. 2 is a diagram illustrating a heat dissipation path in the electronic apparatus S1. In FIG. 2, the direction of heat conduction is indicated by each arrow.

本実施形態では、図２に示されるように、駆動時などに電子部品３０にて発生する熱は、電子部品３０よりも第２の基板２０側については、当該第２の基板２０からはんだ５０を介して第１の基板１０に伝わる。   In the present embodiment, as shown in FIG. 2, the heat generated in the electronic component 30 at the time of driving or the like is from the second substrate 20 to the solder 50 on the second substrate 20 side of the electronic component 30. Is transmitted to the first substrate 10 via.

一方、電子部品３０よりも放熱板４０側については、上記電子部品３０にて発生する熱は、放熱板４０からその外部へ放熱されるとともに、放熱板４０の周辺部の延設部７０に伝わる。そして、当該熱は、延設部７０にて突出部４１からはんだ５０を通り、第１の基板１０に伝わる。そして、第１の基板１０に伝わってきた熱は、内層配線１０ａを伝って、外部へ放熱される。   On the other hand, with respect to the heat radiating plate 40 side of the electronic component 30, the heat generated in the electronic component 30 is radiated from the heat radiating plate 40 to the outside and is transmitted to the extending portion 70 in the peripheral portion of the heat radiating plate 40. . Then, the heat passes through the solder 50 from the protruding portion 41 at the extended portion 70 and is transmitted to the first substrate 10. Then, the heat transmitted to the first substrate 10 is transmitted to the outside through the inner layer wiring 10a.

このように、本実施形態では、放熱板４０の周辺部に、第２の基板２０の一面側から他面側まで延設され、当該他面側にて直接第１の基板１０に熱的に接続された延設部７０を備えることにより、放熱板４０からの熱は、第２の基板２０を介することなく、延設部７０から直接第２の基板２０に伝わるようになっている。それにより、電子部品３０の両面にて適切な放熱が行えるようになっている。   As described above, in the present embodiment, the peripheral portion of the heat radiating plate 40 is extended from one surface side of the second substrate 20 to the other surface side, and is directly thermally applied to the first substrate 10 on the other surface side. By providing the connected extended portion 70, the heat from the heat radiating plate 40 is directly transmitted from the extended portion 70 to the second substrate 20 without passing through the second substrate 20. Thereby, appropriate heat radiation can be performed on both surfaces of the electronic component 30.

次に、本実施形態の電子装置Ｓ１の製造方法について、述べておく。まず、はんだ３１およびアンダーフィル３２を介して、第２の基板２０の一面に電子部品３０をフリップチップ実装する。この電子部品３０の搭載は、一般的なフリップチップボンダーを用いて行える。   Next, a method for manufacturing the electronic device S1 of this embodiment will be described. First, the electronic component 30 is flip-chip mounted on one surface of the second substrate 20 via the solder 31 and the underfill 32. The electronic component 30 can be mounted using a general flip chip bonder.

そして、この上に、放熱板４０をスルーホールデバイス実装（ＴＨＤ）用の装置を用いて搭載する。つまり、電子部品３０の上に、放熱ゲル６０を介して放熱板４０を搭載するとともに、放熱板４０の突出部４１を第２の基板２０の貫通穴２１に挿入する。   And on this, the heat sink 40 is mounted using the apparatus for through-hole device mounting (THD). That is, the heat radiating plate 40 is mounted on the electronic component 30 via the heat radiating gel 60, and the protruding portion 41 of the heat radiating plate 40 is inserted into the through hole 21 of the second substrate 20.

一方、第２の基板２０の他面に、たとえばはんだボールを設ける要領で、はんだ５０を設けておく。そして、このＦＣ−ＢＧＡとしての第２の基板２０を、第１の基板１０の一面上に搭載し、両基板１０、２０の間および突出部４１と第１の基板１０との間を、はんだ５０により接続する。これにより、本実施形態の電子装置Ｓ１ができあがる。   On the other hand, the solder 50 is provided on the other surface of the second substrate 20 in the manner of providing solder balls, for example. Then, the second substrate 20 as the FC-BGA is mounted on one surface of the first substrate 10, and the solder between the both substrates 10 and 20 and between the protruding portion 41 and the first substrate 10. 50 is connected. Thereby, the electronic device S1 of this embodiment is completed.

また、本実施形態では、コスト的には安価にピッチ変換できるインターポーザとしての第２の基板２０を使用することで、次のような利点もある。１つは、第２の基板２０の露出面に、たとえばプログラムの検査端子を配置すれば、はんだボールに傷等を付けることなく検査ができる。また、第２の基板２０の空いた部位に、コンデンサや抵抗等の他部品を実装すればモジュール化も可能となる。   Further, in the present embodiment, by using the second substrate 20 as an interposer that can perform pitch conversion at low cost, there are the following advantages. For example, if an inspection terminal of a program is arranged on the exposed surface of the second substrate 20, for example, the inspection can be performed without damaging the solder balls. Further, if other parts such as a capacitor and a resistor are mounted on the vacant portion of the second substrate 20, modularization is possible.

なお、上記図１では、突出部４１は四角柱状であり、貫通穴２１もそれに対応した形状であるが、突出部４１および貫通穴２１は、突出部４１の先端部が貫通穴２１に挿入されて第２の基板２０の他面側に露出するものであればよく、それ以外にも、たとえば円柱形状などであってもよい。   In FIG. 1, the protrusion 41 has a quadrangular prism shape, and the through hole 21 has a shape corresponding thereto. However, in the protrusion 41 and the through hole 21, the tip end of the protrusion 41 is inserted into the through hole 21. As long as it is exposed to the other surface side of the second substrate 20, for example, a cylindrical shape or the like may be used.

また、突出部４１およびそれに対応して形成される貫通穴２１の位置については、放熱板４０の周辺部であればよく、上記した四隅部以外にも、たとえば辺部などに設けることも可能である。ただし、貫通穴２１については、貫通穴２１による第２の基板２０の機械的強度の低下を考慮し、貫通穴２１の面積は適当な大きさに留める。   In addition, the position of the protruding portion 41 and the through hole 21 formed corresponding to the protruding portion 41 may be a peripheral portion of the heat radiating plate 40, and can be provided at, for example, a side portion in addition to the above four corner portions. is there. However, regarding the through hole 21, the area of the through hole 21 is limited to an appropriate size in consideration of a decrease in mechanical strength of the second substrate 20 due to the through hole 21.

また、両基板１０、２０の間に介在して放熱板４０の突出部４１と第１の基板１０とを熱的に接続する接続部材５０としては、上述したはんだ５０に限定されるものではなく、たとえば導電性接着剤やネジなどであってもよい。   Further, the connecting member 50 interposed between the substrates 10 and 20 and thermally connecting the protruding portion 41 of the heat sink 40 and the first substrate 10 is not limited to the solder 50 described above. For example, a conductive adhesive or a screw may be used.

（第２実施形態）
図３は、本発明の第２実施形態に係る電子装置Ｓ２の概略断面構成を示す図である。本実施形態は、上記第１実施形態に比べて、第１の基板１０の他面（図３中の下面）に筺体１００を設けたことが相違するものであり、ここでは、この相違点を中心に述べることとする。 (Second Embodiment)
FIG. 3 is a diagram showing a schematic cross-sectional configuration of an electronic device S2 according to the second embodiment of the present invention. The present embodiment is different from the first embodiment in that the housing 100 is provided on the other surface (the lower surface in FIG. 3) of the first substrate 10, and here, this difference is different. It will be described in the center.

この筺体１００は、電子装置Ｓ２を収納するケースなどであり、たとえばアルミニウムや銅などの熱伝導性に優れた材料よりなる。筐体１００は、本電子装置Ｓ２の第１の基板１０の他面に接触して設けられている。   The housing 100 is a case for housing the electronic device S2, and is made of a material having excellent thermal conductivity such as aluminum or copper. The housing 100 is provided in contact with the other surface of the first substrate 10 of the electronic device S2.

そして、本電子装置Ｓ２においては、第１の基板１０における延設部７０との接続部に、当該基板の厚さ方向に貫通する放熱用穴部１１が設けられている。この放熱用穴部１１は、第１の基板１０の一面（図３中の上面）から他面に貫通する貫通穴を形成し、この貫通穴に銅や銀などの導電性ペーストを充填してなるものである。   In the electronic device S2, a heat radiating hole 11 penetrating in the thickness direction of the substrate is provided in a connection portion of the first substrate 10 with the extending portion 70. The heat radiating hole 11 is formed with a through hole penetrating from one surface of the first substrate 10 (upper surface in FIG. 3) to the other surface, and filled with a conductive paste such as copper or silver. It will be.

これにより、本実施形態においては、放熱板４０の周辺部に伝わった電子部品３０の熱は、延設部７０を介して、第１の基板１０に伝わり、第１の基板１０の内層配線１０ａを伝って外部へ放熱されるとともに、放熱用穴部１１から筺体１００へ放熱される。そのため、放熱性能のさらなる向上が期待できる。なお、筐体１００と第１の基板１０とが接地できない場合は、当該両者間に上記したような放熱ゲルなどを介在させてもよい。   Thereby, in this embodiment, the heat of the electronic component 30 transmitted to the peripheral part of the heat sink 40 is transmitted to the first substrate 10 via the extending portion 70, and the inner layer wiring 10 a of the first substrate 10. The heat is radiated to the outside through the heat and the heat is radiated from the heat radiating hole 11 to the housing 100. Therefore, further improvement in heat dissipation performance can be expected. In addition, when the housing | casing 100 and the 1st board | substrate 10 cannot be earth | grounded, you may interpose the above-mentioned thermal radiation gel etc. between the said both.

（第３実施形態）
図４は、本発明の第３実施形態に係る電子装置Ｓ３の概略断面構成を示す図である。本実施形態では、上記第１実施形態との相違点を中心に述べることとする。 (Third embodiment)
FIG. 4 is a diagram showing a schematic cross-sectional configuration of an electronic device S3 according to the third embodiment of the present invention. In this embodiment, the difference from the first embodiment will be mainly described.

上記第１実施形態では、放熱板４０の周辺部にて突出し第２の基板２０を厚さ方向に貫通する突出部４１と、この突出部４１と第１の基板１０とを熱的に接続するはんだ５０とにより、延設部７０が構成されていた。   In the said 1st Embodiment, the protrusion 41 which protrudes in the peripheral part of the heat sink 40 and penetrates the 2nd board | substrate 20 in the thickness direction, and this protrusion 41 and the 1st board | substrate 10 are connected thermally. The extending portion 70 is constituted by the solder 50.

それに対して、本実施形態では、図４に示されるように、放熱板４０の突出部４１は、放熱板４０の周辺部を第２の基板２０の貫通穴２１に向かって突出させたものであるが、その先端部が第２の基板２０の貫通穴２１に挿入されるほど長いものではなく、突出部４１の先端部は第２の基板２０の一面上に位置している。   On the other hand, in this embodiment, as shown in FIG. 4, the protrusion 41 of the heat sink 40 is a protrusion of the peripheral portion of the heat sink 40 toward the through hole 21 of the second substrate 20. However, the tip portion is not so long as to be inserted into the through hole 21 of the second substrate 20, and the tip portion of the protruding portion 41 is located on one surface of the second substrate 20.

また、本実施形態では、貫通穴２１には、はんだや導電性ペーストなどの熱伝導性材料よりなる熱伝導性部材２２が充填されている。つまり、第２の基板２０のうち突出部４１に対向する部位には、当該第２の基板２０の厚さ方向に貫通する熱伝導性部材２２が設けられている。   In the present embodiment, the through hole 21 is filled with a heat conductive member 22 made of a heat conductive material such as solder or conductive paste. That is, the thermally conductive member 22 that penetrates in the thickness direction of the second substrate 20 is provided in a portion of the second substrate 20 that faces the protruding portion 41.

そして、第２の基板２０の一面にて、熱伝導性部材２２は突出部４１の先端部に接触し、これら両者２２、４１は互いに熱的に接続されている。一方、第２の基板２０の他面では、熱伝導性部材２２は、上記接続部材としてのはんだ５０に接触し、このはんだ５０を介して、熱伝導性部材２２と第１の基板１０とが互いに熱的に接続されている。   Then, on one surface of the second substrate 20, the heat conductive member 22 is in contact with the tip portion of the protruding portion 41, and both the members 22 and 41 are thermally connected to each other. On the other hand, on the other surface of the second substrate 20, the heat conductive member 22 contacts the solder 50 as the connection member, and the heat conductive member 22 and the first substrate 10 are connected via the solder 50. They are thermally connected to each other.

このように、本実施形態では、放熱板４０の周辺部にて突出する突出部４１と、この突出部４１と熱的に接続され、第２の基板２０を貫通する熱伝導性部材２２と、この熱伝導性部材２２と第１の基板１０とを熱的に接続するはんだ５０とにより、延設部７０が構成されている。   As described above, in the present embodiment, the protruding portion 41 protruding at the peripheral portion of the radiator plate 40, the thermally conductive member 22 that is thermally connected to the protruding portion 41 and penetrates the second substrate 20, The extending portion 70 is configured by the solder 50 that thermally connects the heat conductive member 22 and the first substrate 10.

そして、本実施形態の電子装置Ｓ３においても、電子部品３０にて発生する熱は、放熱板４０から延設部７０を通って第１の基板１０に伝わり、そこで放熱されるから、第２の基板２０を介することなく、放熱板４０から第１の基板１０に直接的に放熱することが可能となる。そして、電子部品３０の両面にて適切な放熱が行える。   Also in the electronic device S3 of the present embodiment, the heat generated in the electronic component 30 is transmitted from the heat radiating plate 40 to the first substrate 10 through the extending portion 70, and is radiated there. It is possible to directly radiate heat from the heat radiating plate 40 to the first substrate 10 without using the substrate 20. And appropriate heat dissipation can be performed on both surfaces of the electronic component 30.

また、本実施形態では、放熱板４０を第１の基板１０の一面上に搭載するときに、その突出部４１を第２の基板２０の貫通穴２１に挿入する必要が無い。そのため、放熱板４０は、ＴＨＤ実装ではなく、電子部品３０とともに表面実装部品用のマウンタにより実装することができる。   Further, in the present embodiment, when the heat radiating plate 40 is mounted on one surface of the first substrate 10, it is not necessary to insert the protruding portion 41 into the through hole 21 of the second substrate 20. Therefore, the heat radiating plate 40 can be mounted not by THD mounting but by a mounter for surface mounting components together with the electronic component 30.

また、本実施形態においては、両基板１０、２０の間に介在して熱伝導性部材２２と第１の基板１０とを熱的に接続する接続部材５０としては、上述したはんだ５０に限定されるものではなく、たとえば導電性接着剤やネジなどであってもよい。また、本実施形態の電子装置Ｓ３においても、上記第２実施形態に示したような筺体１００との組み合わせを行ってもよい。   In the present embodiment, the connecting member 50 interposed between the substrates 10 and 20 and thermally connecting the thermally conductive member 22 and the first substrate 10 is limited to the solder 50 described above. For example, a conductive adhesive or a screw may be used. Also in the electronic device S3 of the present embodiment, a combination with the casing 100 as shown in the second embodiment may be performed.

（第４実施形態）
図５は、本発明の第４実施形態に係る電子装置Ｓ４の概略断面構成を示す図である。本実施形態は、上記第１実施形態に比べて延設部７０の構成を変更したところが相違するものであり、この相違点を中心に述べることとする。 (Fourth embodiment)
FIG. 5 is a diagram showing a schematic cross-sectional configuration of an electronic device S4 according to the fourth embodiment of the present invention. This embodiment is different from the first embodiment in that the configuration of the extending portion 70 is changed, and this difference will be mainly described.

上記第１実施形態では、放熱板４０の周辺部にて突出し第２の基板２０を厚さ方向に貫通する突出部４１と、この突出部４１と第１の基板１０とを熱的に接続するはんだ５０とにより、延設部７０が構成されていた。   In the said 1st Embodiment, the protrusion 41 which protrudes in the peripheral part of the heat sink 40 and penetrates the 2nd board | substrate 20 in the thickness direction, and this protrusion 41 and the 1st board | substrate 10 are connected thermally. The extending portion 70 is constituted by the solder 50.

それに対して、本実施形態では、図５に示されるように、放熱板４０の突出部４１をさらに延長しており、突出部４１の先端部は、第１の基板１０に設けられた貫通穴１２に挿入され第１の基板１０を厚さ方向に貫通している。つまり、突出部４１の先端部は、第１の基板１０の一面側から第１の基板１０における第２の基板２０側とは反対側の他面まで貫通した状態とされている。   On the other hand, in the present embodiment, as shown in FIG. 5, the protrusion 41 of the heat radiating plate 40 is further extended, and the tip of the protrusion 41 is a through hole provided in the first substrate 10. 12 is inserted through the first substrate 10 in the thickness direction. That is, the tip end portion of the protrusion 41 penetrates from one surface side of the first substrate 10 to the other surface of the first substrate 10 opposite to the second substrate 20 side.

そして、突出部４１の先端部は、第１の基板１０の貫通穴１２内にて第１の基板１０の内層配線１０ａに接触するとともに、第１の基板１０の他面にて突出する部位を、はんだ５０ａにより固定されており、突出部４１の先端部と第１の基板１０とは熱的に接続されている。なお、第１の基板１０の貫通穴１２も、プレス加工やエッチングなどにより形成される。   And the front-end | tip part of the protrusion part 41 contacts the inner-layer wiring 10a of the 1st board | substrate 10 in the through-hole 12 of the 1st board | substrate 10, and also the site | part which protrudes on the other surface of the 1st board | substrate 10. The tip of the protruding portion 41 and the first substrate 10 are thermally connected. Note that the through hole 12 of the first substrate 10 is also formed by pressing or etching.

このように、本実施形態では、突出部４１により延設部７０が構成されている。そして、本実施形態の電子装置Ｓ４においても、電子部品３０にて発生する熱は、放熱板４０から延設部７０を通って第１の基板１０に伝わり、そこで放熱されるから、第２の基板２０を介することなく、放熱板４０から第１の基板１０に直接的に放熱することが可能となる。そして、電子部品３０の両面にて適切な放熱が行える。   Thus, in the present embodiment, the extending portion 70 is configured by the protruding portion 41. Also in the electronic device S4 of the present embodiment, the heat generated in the electronic component 30 is transmitted from the heat radiating plate 40 to the first substrate 10 through the extending portion 70, and is radiated there. It is possible to directly radiate heat from the heat radiating plate 40 to the first substrate 10 without using the substrate 20. And appropriate heat dissipation can be performed on both surfaces of the electronic component 30.

また、本実施形態によれば、放熱板４０の突出部４１が第１の基板１０を貫通しているので、放熱板４０と第１の基板１０との間の熱的な接続を行うにあたって、上記第３実施形態のような熱伝導性接続部材が不要となる。また、突出部４１は、第１の基板１０の内部にて内層配線１０ａと直接、熱的に接続されるので、放熱性の向上が期待できる。   Further, according to the present embodiment, since the protruding portion 41 of the heat radiating plate 40 penetrates the first substrate 10, in performing the thermal connection between the heat radiating plate 40 and the first substrate 10, The heat conductive connection member as in the third embodiment is not necessary. Moreover, since the protrusion 41 is directly thermally connected to the inner layer wiring 10a inside the first substrate 10, an improvement in heat dissipation can be expected.

また、突出部４１は、第１の基板１０を貫通して第１の基板１０の他面に露出しているので、図５に示されるように、この第１の基板１０の他面に上記第２実施形態に示したような筺体１００を設け、これに突出部４１の先端部を接触させれば、さらなる放熱性の向上が図れる。   Further, since the protruding portion 41 penetrates the first substrate 10 and is exposed to the other surface of the first substrate 10, as shown in FIG. If the housing 100 as shown in the second embodiment is provided and the tip of the protruding portion 41 is brought into contact with the housing 100, the heat dissipation can be further improved.

（第５実施形態）
図６は、本発明の第５実施形態に係る電子装置Ｓ５の概略断面構成を示す図である。本実施形態は、上記第２実施形態に比べて、延設部７０における熱伝導性部材２２および接続部材５０としてのはんだ５０を、鉄やステンレスなどの金属製のネジ５１で代用したところが相違するものであり、この相違点を中心に述べることとする。 (Fifth embodiment)
FIG. 6 is a diagram showing a schematic cross-sectional configuration of an electronic device S5 according to the fifth embodiment of the present invention. This embodiment is different from the second embodiment in that the heat conductive member 22 and the solder 50 as the connection member 50 in the extended portion 70 are replaced with a metal screw 51 such as iron or stainless steel. However, this difference will be mainly described.

図６に示されるように、本実施形態では、ネジ５１を、第１の基板１０の他面側から第１の基板１０を厚さ方向に貫通させ、さらに第２の基板２０を厚さ方向に貫通させ、第２の基板２０の一面側にて、ネジ５１と放熱板４０の突出部４１とを接続している。   As shown in FIG. 6, in the present embodiment, the screw 51 is passed through the first substrate 10 in the thickness direction from the other surface side of the first substrate 10, and the second substrate 20 is further moved in the thickness direction. The screw 51 and the protruding portion 41 of the heat sink 40 are connected on one surface side of the second substrate 20.

この場合、たとえば、電子部品３０が搭載・固定された第２の基板２０を、はんだ５０を介して第１の基板１０に接合した後、放熱ゲル６０を介して放熱板４０を電子部品３０に仮固定した状態で、ネジ５１によって、第１の基板１０と一緒に放熱板４０をネジ結合すればよい。また、この場合、ネジ５１を雄ねじとし、突出部４１にはこれに対応する雌ねじを形成しておけばよい。   In this case, for example, after the second substrate 20 on which the electronic component 30 is mounted / fixed is joined to the first substrate 10 via the solder 50, the heat dissipation plate 40 is attached to the electronic component 30 via the heat dissipation gel 60. The heat sink 40 may be screwed together with the first substrate 10 with screws 51 in the temporarily fixed state. In this case, the screw 51 may be a male screw, and the protrusion 41 may be formed with a female screw corresponding thereto.

このように、本実施形態では、突出部４１およびネジ５１により延設部７０が構成されている。そして、本実施形態の電子装置Ｓ５においても、電子部品３０にて発生する熱は、放熱板４０から延設部７０を通って第１の基板１０に伝わり、そこで放熱されるから、第２の基板２０を介することなく、放熱板４０から第１の基板１０に直接的に放熱することが可能となる。そして、電子部品３０の両面にて適切な放熱が行える。   Thus, in the present embodiment, the extending portion 70 is configured by the protruding portion 41 and the screw 51. Also in the electronic device S5 of the present embodiment, the heat generated in the electronic component 30 is transmitted from the heat radiating plate 40 to the first substrate 10 through the extending portion 70, and is radiated there. It is possible to directly radiate heat from the heat radiating plate 40 to the first substrate 10 without using the substrate 20. And appropriate heat dissipation can be performed on both surfaces of the electronic component 30.

また、本実施形態によれば、放熱板４０と第１の基板１０との間の熱的な接続を、導電性ペーストなどの熱伝導性接続部材を介することなく行える。また、金属製のネジ５１が、第１の基板１０の内部にて内層配線１０ａと直接、熱的に接続されるので、放熱性の向上が期待できる。   Moreover, according to this embodiment, the thermal connection between the heat sink 40 and the first substrate 10 can be performed without using a heat conductive connection member such as a conductive paste. Further, since the metal screw 51 is directly thermally connected to the inner layer wiring 10a inside the first substrate 10, an improvement in heat dissipation can be expected.

また、本実施形態では、ネジ５１は、その頭部が第１の基板１０の他面に露出しているので、図６に示されるように、上記同様の筺体１００を設け、これにネジ５１を接触させれば、さらなる放熱性の向上が図れる。   In this embodiment, since the head of the screw 51 is exposed on the other surface of the first substrate 10, as shown in FIG. Can be further improved in heat dissipation.

（第６実施形態）
図７は、本発明の第６実施形態に係る電子装置Ｓ６の概略断面構成を示す図である。本実施形態は、上記各実施形態における放熱板４０を、ヒートシンクのような板材ではなく、銅やアルミニウムなどの金属箔より構成したものである。 (Sixth embodiment)
FIG. 7 is a diagram showing a schematic cross-sectional configuration of an electronic device S6 according to the sixth embodiment of the present invention. In the present embodiment, the heat radiating plate 40 in each of the above embodiments is configured by a metal foil such as copper or aluminum instead of a plate material such as a heat sink.

本実施形態では、図７に示されるように、第２の基板２０の一面上にて、金属箔よりなる放熱板４０により電子部品３０を覆う。ここで、放熱板４０の周辺部は第２の基板２０の端部よりはみ出すものを用いる。なお、この場合も、電子部品３０と放熱板４０との間に放熱ゲル６０を介在させてもよい。   In the present embodiment, as shown in FIG. 7, the electronic component 30 is covered with a heat dissipation plate 40 made of metal foil on one surface of the second substrate 20. Here, the peripheral part of the heat sink 40 is used that protrudes from the end of the second substrate 20. In this case as well, a heat radiating gel 60 may be interposed between the electronic component 30 and the heat radiating plate 40.

そして、放熱板４０の周辺部を第２の基板２０の端部まで延ばし、当該端部よりはみ出した部分を、当該端部にて第２の基板２０の他面に向かって折り返し、この折り返された部位としての折り返し部４２を形成する。   And the peripheral part of the heat sink 40 is extended to the edge part of the 2nd board | substrate 20, and the part which protruded from the said edge part is turned toward the other surface of the 2nd board | substrate 20 in the said edge part, and this folding is carried out. A folded portion 42 is formed as a part.

そして、第２の基板２０の他面側にて、折り返し部４２と第１の基板１０とは、これら両者間に介在する金属製の接続部材としてのはんだ５０により、熱的に接続される。なお、この接続部材５０も、はんだ５０に代えて導電性接着剤などでもよい。   Then, on the other surface side of the second substrate 20, the folded portion 42 and the first substrate 10 are thermally connected by a solder 50 as a metal connection member interposed therebetween. The connecting member 50 may also be a conductive adhesive instead of the solder 50.

このように、本実施形態では、放熱板４０の折り返し部４２と接続部材５０とにより、延設部７０が形成されている。そして、本実施形態の電子装置Ｓ６においても、適切な両面放熱を実現しつつ、電子部品３０にて発生する熱は、放熱板４０から延設部７０を通って第１の基板１０に伝わり、そこで放熱されるから、第２の基板２０を介することなく、放熱板４０から第１の基板１０に直接的に放熱することが可能となる。   Thus, in this embodiment, the extending portion 70 is formed by the folded portion 42 of the heat radiating plate 40 and the connection member 50. In the electronic device S6 of the present embodiment, heat generated in the electronic component 30 is transmitted from the heat radiating plate 40 to the first substrate 10 through the extending portion 70 while realizing appropriate double-sided heat dissipation. Since the heat is radiated there, heat can be directly radiated from the heat radiating plate 40 to the first substrate 10 without passing through the second substrate 20.

また、本実施形態によれば、第２の基板２０に対して、その一面から他面まで貫通する貫通穴を設けることなく、延設部７０を、第２の基板２０の一面から他面まで延ばすとともに、第１の基板１０に熱的に接続することができる。   In addition, according to the present embodiment, the extending portion 70 is provided from one surface of the second substrate 20 to the other surface without providing a through hole penetrating from the one surface to the other surface of the second substrate 20. It can be extended and thermally connected to the first substrate 10.

（第７実施形態）
図８は、本発明の第７実施形態に係る電子装置Ｓ７の概略断面構成を示す図である。本実施形態は、上記第４実施形態に示される電子装置（上記図５参照）において、第２の基板２０を、電子部品３０を内蔵する部品内蔵基板としたものである。 (Seventh embodiment)
FIG. 8 is a diagram showing a schematic cross-sectional configuration of an electronic device S7 according to the seventh embodiment of the present invention. In the present embodiment, in the electronic device shown in the fourth embodiment (see FIG. 5), the second substrate 20 is a component-embedded substrate in which an electronic component 30 is built.

この第２の基板２０は、図８に示されるように、樹脂基板の内部に内層配線２０ａと電子部品３０を埋設した一般的なものであり、電子部品３０は第２の基板２０の一面側に寄って配置されている。   As shown in FIG. 8, the second substrate 20 is a general one in which an inner layer wiring 20 a and an electronic component 30 are embedded in a resin substrate, and the electronic component 30 is one surface side of the second substrate 20. It is arranged close to.

この場合、放熱板４０は、第２の基板２０の一面に接するとともに、第２の基板２０の端部よりはみ出した部位に突出部４１を有している。そして、図８に示されるように、第２の基板２０の端面と突出部４１とが接触しており、その結果、第２の基板２０の端面に露出する内層配線２０ａと突出部４１とが接触して熱的に接続されている。   In this case, the heat radiating plate 40 is in contact with one surface of the second substrate 20 and has a protruding portion 41 at a portion protruding from the end portion of the second substrate 20. As shown in FIG. 8, the end surface of the second substrate 20 is in contact with the protruding portion 41, and as a result, the inner layer wiring 20 a and the protruding portion 41 exposed on the end surface of the second substrate 20 are in contact with each other. In contact and thermally connected.

本実施形態によれば、上記第４実施形態と同様の作用効果を奏するとともに、第２の基板２０の内部の電子部品３０から、内層配線２０ａを介して、第２の基板２０の板面方向へ向かう放熱が可能となる。そのため、電子部品３０については、両面放熱（第２の基板２０の厚さ方向への放熱）に加えて、放熱経路が増加し、さらなる放熱性の向上が可能である。   According to the present embodiment, the same effects as those of the fourth embodiment are achieved, and the plate surface direction of the second substrate 20 from the electronic component 30 inside the second substrate 20 via the inner layer wiring 20a. Heat dissipation toward Therefore, in addition to double-sided heat dissipation (heat dissipation in the thickness direction of the second substrate 20), the heat dissipation path is increased for the electronic component 30 and further heat dissipation can be improved.

（第８実施形態）
図９は、本発明の第８実施形態に係る電子装置Ｓ８の概略断面構成を示す図である。本実施形態は、上記第１実施形態に示される電子装置（上記図１参照）において、上記第７実施形態同様に、第２の基板２０の板面方向への電子部品３０の放熱経路の増加を図ったものである。 (Eighth embodiment)
FIG. 9 is a diagram showing a schematic cross-sectional configuration of an electronic device S8 according to the eighth embodiment of the present invention. In the present embodiment, in the electronic device shown in the first embodiment (see FIG. 1), the heat dissipation path of the electronic component 30 in the direction of the plate surface of the second substrate 20 is increased as in the seventh embodiment. Is intended.

図９に示されるように、本実施形態では、第２の基板２０の一面上に搭載されている電子部品３０について、図９中の横方向（つまり、第２の基板２０の板面方向）における放熱板４０との隙間をできるだけ狭くし、その隙間を上記放熱ゲル６０で埋め尽くした構成とする。それにより、同方向において、電子部品３０と放熱板４０とが、放熱ゲル６０を介して熱的に接続された形となる。   As shown in FIG. 9, in this embodiment, the electronic component 30 mounted on one surface of the second substrate 20 is in the horizontal direction in FIG. 9 (that is, the plate surface direction of the second substrate 20). The gap with the heat radiating plate 40 is made as narrow as possible, and the gap is filled with the heat radiating gel 60. Thus, in the same direction, the electronic component 30 and the heat radiating plate 40 are thermally connected via the heat radiating gel 60.

そうすることで、電子部品３０については、上記両面方向だけでなく、第２の基板２０の板面方向への放熱も可能となり、さらなる放熱性の向上が期待できる。以下の第９〜第１２実施形態では、本実施形態の考え方を、上記第１実施形態だけでなく、それ以外の上記実施形態に応用したものである。   By doing so, about the electronic component 30, not only the said double-sided direction but heat dissipation to the plate | board surface direction of the 2nd board | substrate 20 is attained, and the further improvement of heat dissipation can be anticipated. In the following ninth to twelfth embodiments, the concept of the present embodiment is applied not only to the first embodiment but also to the other embodiments described above.

（第９実施形態）
図１０は、本発明の第９実施形態に係る電子装置Ｓ９の概略断面構成を示す図である。本実施形態は、上記第３実施形態に示される電子装置（上記図４参照）において、第２の基板２０の板面方向への電子部品３０の放熱経路の増加を図ったものである。 (Ninth embodiment)
FIG. 10 is a diagram showing a schematic cross-sectional configuration of an electronic device S9 according to the ninth embodiment of the present invention. In the present embodiment, in the electronic device (see FIG. 4) shown in the third embodiment, the heat radiation path of the electronic component 30 in the direction of the plate surface of the second substrate 20 is increased.

図１０に示されるように、本実施形態では、第２の基板２０の一面上に搭載されている電子部品３０について、図１０中の横方向（つまり、第２の基板２０の板面方向）における放熱板４０との隙間をできるだけ狭くし、その隙間を上記放熱ゲル６０で埋め尽くした構成とする。そうすることで、電子部品３０については、第２の基板２０の板面方向への放熱も可能となり、さらなる放熱性の向上が期待できる。   As shown in FIG. 10, in the present embodiment, the electronic component 30 mounted on one surface of the second substrate 20 is in the horizontal direction in FIG. 10 (that is, the plate surface direction of the second substrate 20). The gap with the heat radiating plate 40 is made as narrow as possible, and the gap is filled with the heat radiating gel 60. By doing so, the electronic component 30 can also dissipate heat in the direction of the plate surface of the second substrate 20, and further improvement in heat dissipation can be expected.

（第１０実施形態）
図１１は、本発明の第１０実施形態に係る電子装置Ｓ１０概略断面構成を示す図である。本実施形態は、上記第４実施形態に示される電子装置（上記図５参照）において、第２の基板２０の板面方向への電子部品３０の放熱経路の増加を図ったものである。 (10th Embodiment)
FIG. 11 is a diagram showing a schematic cross-sectional configuration of the electronic device S10 according to the tenth embodiment of the present invention. In this embodiment, in the electronic device shown in the fourth embodiment (see FIG. 5 above), the heat radiation path of the electronic component 30 in the direction of the plate surface of the second substrate 20 is increased.

図１１に示されるように、本実施形態では、第２の基板２０の一面上に搭載されている電子部品３０について、図１１中の横方向（つまり、第２の基板２０の板面方向）における放熱板４０との隙間をできるだけ狭くし、その隙間を上記放熱ゲル６０で埋め尽くした構成とする。そうすることで、電子部品３０については、第２の基板２０の板面方向への放熱も可能となり、さらなる放熱性の向上が期待できる。   As shown in FIG. 11, in this embodiment, the electronic component 30 mounted on one surface of the second substrate 20 is in the horizontal direction in FIG. 11 (that is, the plate surface direction of the second substrate 20). The gap with the heat radiating plate 40 is made as narrow as possible, and the gap is filled with the heat radiating gel 60. By doing so, the electronic component 30 can also dissipate heat in the direction of the plate surface of the second substrate 20, and further improvement in heat dissipation can be expected.

（第１１実施形態）
図１２は、本発明の第１１実施形態に係る電子装置Ｓ１１の概略断面構成を示す図である。本実施形態は、上記第５実施形態に示される電子装置（上記図６参照）において、第２の基板２０の板面方向への電子部品３０の放熱経路の増加を図ったものである。 (Eleventh embodiment)
FIG. 12 is a diagram showing a schematic cross-sectional configuration of an electronic device S11 according to the eleventh embodiment of the present invention. In this embodiment, in the electronic device shown in the fifth embodiment (see FIG. 6 above), the heat radiation path of the electronic component 30 in the direction of the plate surface of the second substrate 20 is increased.

図１２に示されるように、本実施形態では、第２の基板２０の一面上に搭載されている電子部品３０について、図１２中の横方向（つまり、第２の基板２０の板面方向）における放熱板４０との隙間をできるだけ狭くし、その隙間を上記放熱ゲル６０で埋め尽くした構成とする。そうすることで、電子部品３０については、第２の基板２０の板面方向への放熱も可能となり、さらなる放熱性の向上が期待できる。   As shown in FIG. 12, in this embodiment, the electronic component 30 mounted on one surface of the second substrate 20 is in the horizontal direction in FIG. 12 (that is, the plate surface direction of the second substrate 20). The gap with the heat radiating plate 40 is made as narrow as possible, and the gap is filled with the heat radiating gel 60. By doing so, the electronic component 30 can also dissipate heat in the direction of the plate surface of the second substrate 20, and further improvement in heat dissipation can be expected.

（第１２実施形態）
図１３は、本発明の第１２実施形態に係る電子装置Ｓ１２の概略断面構成を示す図である。本実施形態は、上記第６実施形態に示される電子装置（上記図７参照）において、第２の基板２０の板面方向への電子部品３０の放熱経路の増加を図ったものである。 (Twelfth embodiment)
FIG. 13: is a figure which shows schematic sectional structure of electronic device S12 which concerns on 12th Embodiment of this invention. In this embodiment, in the electronic device shown in the sixth embodiment (see FIG. 7), the heat dissipation path of the electronic component 30 in the direction of the plate surface of the second substrate 20 is increased.

図１３に示されるように、本実施形態では、第２の基板２０の一面上に搭載されている電子部品３０について、図１３中の横方向（つまり、第２の基板２０の板面方向）における放熱板４０との隙間をできるだけ狭くし、その隙間を上記放熱ゲル６０で埋め尽くした構成とする。そうすることで、電子部品３０については、第２の基板２０の板面方向への放熱も可能となり、さらなる放熱性の向上が期待できる。   As shown in FIG. 13, in this embodiment, the electronic component 30 mounted on one surface of the second substrate 20 is in the horizontal direction in FIG. 13 (that is, the plate surface direction of the second substrate 20). The gap with the heat radiating plate 40 is made as narrow as possible, and the gap is filled with the heat radiating gel 60. By doing so, the electronic component 30 can also dissipate heat in the direction of the plate surface of the second substrate 20, and further improvement in heat dissipation can be expected.

（第１３実施形態）
図１４は、本発明の第１３実施形態に係る電子装置Ｓ１３の概略断面構成を示す図である。本実施形態では、上記第１実施形態との相違点を中心に述べることとする。 (13th Embodiment)
FIG. 14 is a diagram showing a schematic cross-sectional configuration of an electronic device S13 according to the thirteenth embodiment of the present invention. In this embodiment, the difference from the first embodiment will be mainly described.

図１４に示されるように、放熱板４０の周辺部は、第２の基板２０の端部よりはみ出しており、突出部４１は、このはみ出している部位にて第１の基板１０まで突出する形で設けられている。   As shown in FIG. 14, the peripheral portion of the heat radiating plate 40 protrudes from the end of the second substrate 20, and the protruding portion 41 protrudes to the first substrate 10 at the protruding portion. Is provided.

そして、突出部４１の先端部と第１の基板１０とは、これら両者の間に介在するはんだ５０により熱的に接続されている。このように、本実施形態では延設部７０は、突出部４１と、はんだ５０とにより構成されている。   And the front-end | tip part of the protrusion part 41 and the 1st board | substrate 10 are thermally connected by the solder 50 interposed between these both. Thus, in this embodiment, the extending portion 70 is configured by the protruding portion 41 and the solder 50.

本実施形態によれば、電子部品３０にて発生する熱は、放熱板４０から延設部７０を通って第１の基板１０に伝わり、そこで放熱されるから、第２の基板２０を介することなく、放熱板４０から第１の基板１０に直接的に放熱することが可能となる。そして、電子部品３０の両面にて適切な放熱が行える。   According to the present embodiment, the heat generated in the electronic component 30 is transmitted from the heat radiating plate 40 through the extending portion 70 to the first substrate 10 and is radiated there, so that it passes through the second substrate 20. Instead, heat can be radiated directly from the heat radiating plate 40 to the first substrate 10. And appropriate heat dissipation can be performed on both surfaces of the electronic component 30.

また図１５は、第１の基板１０における突出部４１のはんだ接続部の下部に、当該基板の厚さ方向に貫通する放熱用穴部１１が設けられている。この放熱用穴部１１は、第１の基板１０の一面（図１５中の上面）から他面に貫通する貫通穴を形成し、この貫通穴に銅や銀などの導電性ペーストを充填してなるものである。突出部４１は、第１の基板１０とはんだ５０にて接続されているので、この導電性ペーストで埋めた放熱用穴部１１を通じ、第１の基板１０の他面に放熱する事ができるので、図１５に示されるように、この第１の基板１０の他面に上記第２実施形態に示したような筺体１００を設け、これに導電性ペーストで埋めた放熱用穴部１１を接触させれば、さらなる放熱性の向上が図れる。   Further, in FIG. 15, a heat radiating hole 11 penetrating in the thickness direction of the board is provided in the lower part of the solder connection part of the protrusion 41 in the first board 10. The heat radiating hole 11 is formed with a through hole penetrating from one surface of the first substrate 10 (upper surface in FIG. 15) to the other surface and filled with a conductive paste such as copper or silver. It will be. Since the protruding portion 41 is connected to the first substrate 10 by the solder 50, heat can be radiated to the other surface of the first substrate 10 through the heat radiating hole 11 filled with the conductive paste. As shown in FIG. 15, the casing 100 as shown in the second embodiment is provided on the other surface of the first substrate 10, and the heat radiating hole 11 filled with the conductive paste is brought into contact therewith. If so, the heat dissipation can be further improved.

また、本実施形態によれば、第２の基板２０に対して、その一面から他面まで貫通する貫通穴を設けることなく、延設部７０を、第２の基板２０の一面から他面まで延ばすとともに、第１の基板１０に熱的に接続することができる。   In addition, according to the present embodiment, the extending portion 70 is provided from one surface of the second substrate 20 to the other surface without providing a through hole penetrating from the one surface to the other surface of the second substrate 20. It can be extended and thermally connected to the first substrate 10.

（他の実施形態）
なお、上記各実施形態においては、延設部７０を主要部とするものであり、電子装置におけるそれ以外の部分、たとえば各基板１０、２０、電子部品３０などについては、適宜設計変更が可能である。 (Other embodiments)
In each of the above-described embodiments, the extending portion 70 is a main portion, and other parts of the electronic device, for example, the substrates 10 and 20 and the electronic component 30 can be appropriately changed in design. is there.

本発明の第１実施形態に係る電子装置を示す図であり、（ａ）は概略断面図、（ｂ）は（ａ）中の概略上面図である。It is a figure which shows the electronic device which concerns on 1st Embodiment of this invention, (a) is a schematic sectional drawing, (b) is a schematic top view in (a). 第１実施形態の電子装置における放熱経路を示す図である。It is a figure which shows the thermal radiation path | route in the electronic device of 1st Embodiment. 本発明の第２実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 3rd Embodiment of this invention. 本発明の第４実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 4th Embodiment of this invention. 本発明の第５実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 5th Embodiment of this invention. 本発明の第６実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 6th Embodiment of this invention. 本発明の第７実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 7th Embodiment of this invention. 本発明の第８実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 8th Embodiment of this invention. 本発明の第９実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 9th Embodiment of this invention. 本発明の第１０実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 10th Embodiment of this invention. 本発明の第１１実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 11th Embodiment of this invention. 本発明の第１２実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 12th Embodiment of this invention. 本発明の第１３実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 13th Embodiment of this invention. 本発明の第１３実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 13th Embodiment of this invention.

符号の説明Explanation of symbols

１０ 第１の基板
１２ 第１の基板の貫通穴
２０ 第２の基板
２１ 第２の基板の貫通穴
３０ 電子部品
４０ 放熱板
４１ 突出部
４２ 折り返し部
５０ はんだ
７０ 延設部
DESCRIPTION OF SYMBOLS 10 1st board | substrate 12 Through-hole of 1st board | substrate 20 2nd board | substrate 21 Through-hole of 2nd board | substrate 30 Electronic component 40 Heat sink 41 Projection part 42 Folding part 50 Solder 70 Extension part

Claims (2)

第１の基板（１０）と、
一面側に電子部品（３０）が設けられ他面側が前記第１の基板（１０）に対向した状態で前記第１の基板（１０）に搭載され前記第１の基板（１０）と熱的に接続された第２の基板（２０）と、
前記第２の基板（２０）の一面側に設けられ前記電子部品（３０）と熱的に接続された放熱板（４０）とを備える電子装置において、
前記放熱板（４０）の周辺部には、前記第２の基板（２０）の前記一面側から前記他面側まで延設され、当該他面側にて直接、前記第１の基板（１０）に熱的に接続された延設部（７０）が備えられており、
前記第２の基板（２０）には前記一面から前記他面まで貫通する貫通穴（２１）が設けられており、
前記延設部（７０）は、前記放熱板（４０）の周辺部を前記第２の基板（２０）側に突出させたものであって先端部が前記貫通穴（２１）に挿入されて前記第２の基板（２０）の前記他面側に露出する突出部（４１）と、
前記第２の基板（２０）の前記他面側にて前記突出部（４１）の前記先端部と前記第１の基板（１０）との間に介在し、これら両者を熱的に接続する金属製の第１の接続部材（５０）とよりなるものであり、
さらに、前記第１の基板（１０）と前記第２の基板（２０）との間であって前記電子部品（３０）の直下には、金属製の第２の接続部材（５０）が設けられており、前記電子部品（３０）にて発生する熱は前記第２の基板（２０）から前記第２の接続部材（５０）を介して前記第１の基板（１０）に伝わるようになっていることを特徴とする電子装置。 A first substrate (10);
An electronic component (30) is provided on one surface side, and the other surface side is mounted on the first substrate (10) in a state of facing the first substrate (10), and is thermally coupled to the first substrate (10). A connected second substrate (20);
In an electronic device comprising a heat sink (40) provided on one side of the second substrate (20) and thermally connected to the electronic component (30),
A peripheral portion of the heat radiating plate (40) extends from the one surface side of the second substrate (20) to the other surface side, and directly on the other surface side, the first substrate (10). An extended portion (70) thermally connected to the
The second substrate (20) is provided with a through hole (21) penetrating from the one surface to the other surface,
The extending portion (70) is a peripheral portion of the heat radiating plate (40) that protrudes toward the second substrate (20), and a tip portion is inserted into the through hole (21). A protrusion (41) exposed on the other surface side of the second substrate (20);
Metal that is interposed between the tip portion of the projecting portion (41) and the first substrate (10) on the other surface side of the second substrate (20) and thermally connects them. The first connecting member (50) made of
Further, a metal second connection member (50) is provided between the first substrate (10) and the second substrate (20) and immediately below the electronic component (30). The heat generated in the electronic component (30) is transferred from the second substrate (20) to the first substrate (10) via the second connection member (50). An electronic device characterized by comprising: 前記第1の接続部材（５０）と前記第２の接続部材（５０）とは、同じものであることを特徴とする請求項１に記載の電子装置。 The electronic device according to claim 1, wherein the first connecting member (50) and the second connecting member (50) are the same .
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