JP2006086534A - 高温基板処理用の粗面サセプタ - Google Patents
高温基板処理用の粗面サセプタ Download PDFInfo
- Publication number
- JP2006086534A JP2006086534A JP2005268362A JP2005268362A JP2006086534A JP 2006086534 A JP2006086534 A JP 2006086534A JP 2005268362 A JP2005268362 A JP 2005268362A JP 2005268362 A JP2005268362 A JP 2005268362A JP 2006086534 A JP2006086534 A JP 2006086534A
- Authority
- JP
- Japan
- Prior art keywords
- substrate support
- susceptor
- semiconductor substrate
- substrate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 139
- 238000012545 processing Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000003746 surface roughness Effects 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 68
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021478 group 5 element Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 59
- 238000012546 transfer Methods 0.000 description 27
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 239000010409 thin film Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- -1 paraffins Chemical class 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61099304P | 2004-09-17 | 2004-09-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006086534A true JP2006086534A (ja) | 2006-03-30 |
| JP2006086534A5 JP2006086534A5 (enExample) | 2008-10-16 |
Family
ID=35519641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005268362A Pending JP2006086534A (ja) | 2004-09-17 | 2005-09-15 | 高温基板処理用の粗面サセプタ |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20060060145A1 (enExample) |
| EP (2) | EP1965412A1 (enExample) |
| JP (1) | JP2006086534A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277781A (ja) * | 2007-03-30 | 2008-11-13 | Covalent Materials Corp | 縦型ウエハボート |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1031985C2 (nl) * | 2006-06-12 | 2007-12-13 | Xycarb Ceramics B V | Werkwijze voor het vervaardigen van een inrichting voor het ondersteunen van een substraat tijdens de vervaardiging van halfgeleider-componenten alsmede een dergelijke inrichting. |
| JP2010509778A (ja) * | 2006-11-10 | 2010-03-25 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | サセプタおよびサセプタを用いたled装置の形成方法 |
| FR2914488B1 (fr) * | 2007-03-30 | 2010-08-27 | Soitec Silicon On Insulator | Substrat chauffage dope |
| JP5444607B2 (ja) * | 2007-10-31 | 2014-03-19 | 株式会社Sumco | エピタキシャル膜形成装置用のサセプタ、エピタキシャル膜形成装置、エピタキシャルウェーハの製造方法 |
| JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
| JP5562409B2 (ja) * | 2010-02-26 | 2014-07-30 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板製造方法及び基板処理装置 |
| WO2011139640A2 (en) * | 2010-05-06 | 2011-11-10 | Applied Materials, Inc. | Improved radiation heating efficiency by increasing absorption of a silicon containing material |
| US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
| JP5906318B2 (ja) * | 2012-08-17 | 2016-04-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
| US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
| US10763154B2 (en) | 2018-08-28 | 2020-09-01 | Applied Materials, Inc. | Measurement of flatness of a susceptor of a display CVD chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745534A (ja) * | 1993-07-30 | 1995-02-14 | Sony Corp | 縦型cvd装置 |
| JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
| JPH10321543A (ja) * | 1997-05-20 | 1998-12-04 | Sumitomo Metal Ind Ltd | ウェハ支持体及び縦型ボート |
| JPH11176710A (ja) * | 1997-12-11 | 1999-07-02 | Asahi Glass Co Ltd | 半導体製造装置用部材 |
| JP2002503884A (ja) * | 1998-02-11 | 2002-02-05 | アプライド マテリアルズ インコーポレイテッド | 熱処理チャンバ用基板支持体 |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT219865B (de) * | 1960-05-17 | 1962-02-26 | Plansee Metallwerk | Suszeptor aus hochschmelzenden Metallen für Induktionsöfen und Verfahren zu dessen Herstellung |
| US3972704A (en) * | 1971-04-19 | 1976-08-03 | Sherwood Refractories, Inc. | Apparatus for making vitreous silica receptacles |
| US4322592A (en) * | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
| US4468259A (en) * | 1981-12-04 | 1984-08-28 | Ushio Denki Kabushiki Kaisha | Uniform wafer heating by controlling light source and circumferential heating of wafer |
| US4499147A (en) * | 1981-12-28 | 1985-02-12 | Ibiden Co., Ltd. | Silicon carbide substrates and a method of producing the same |
| US4407654A (en) * | 1982-01-21 | 1983-10-04 | The Potters Supply Company | Handling and support system for kiln fired ware |
| US4770590A (en) * | 1986-05-16 | 1988-09-13 | Silicon Valley Group, Inc. | Method and apparatus for transferring wafers between cassettes and a boat |
| US4772498A (en) * | 1986-11-20 | 1988-09-20 | Air Products And Chemicals, Inc. | Silicon carbide capillaries |
| JPH0617295Y2 (ja) * | 1987-11-27 | 1994-05-02 | 大日本スクリーン製造株式会社 | 基板受け渡し装置 |
| US4978567A (en) * | 1988-03-31 | 1990-12-18 | Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. | Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same |
| US4900214A (en) * | 1988-05-25 | 1990-02-13 | American Telephone And Telegraph Company | Method and apparatus for transporting semiconductor wafers |
| JP2683675B2 (ja) * | 1989-01-26 | 1997-12-03 | 東京エレクトロン株式会社 | 搬送装置 |
| US5110248A (en) * | 1989-07-17 | 1992-05-05 | Tokyo Electron Sagami Limited | Vertical heat-treatment apparatus having a wafer transfer mechanism |
| US5162047A (en) * | 1989-08-28 | 1992-11-10 | Tokyo Electron Sagami Limited | Vertical heat treatment apparatus having wafer transfer mechanism and method for transferring wafers |
| KR0153250B1 (ko) * | 1990-06-28 | 1998-12-01 | 카자마 겐쥬 | 종형 열처리 장치 |
| US5310339A (en) * | 1990-09-26 | 1994-05-10 | Tokyo Electron Limited | Heat treatment apparatus having a wafer boat |
| US5192371A (en) * | 1991-05-21 | 1993-03-09 | Asm Japan K.K. | Substrate supporting apparatus for a CVD apparatus |
| JPH05102056A (ja) * | 1991-10-11 | 1993-04-23 | Rohm Co Ltd | ウエハー支持具 |
| JP3234617B2 (ja) * | 1991-12-16 | 2001-12-04 | 東京エレクトロン株式会社 | 熱処理装置用基板支持具 |
| NL9200446A (nl) * | 1992-03-10 | 1993-10-01 | Tempress B V | Inrichting voor het behandelen van microschakeling-schijven (wafers). |
| JP3100252B2 (ja) * | 1992-05-26 | 2000-10-16 | 東京エレクトロン株式会社 | 被処理体用ボート及びそれを用いた被処理体の移し換え方法ならびに熱処理装置 |
| US5492229A (en) * | 1992-11-27 | 1996-02-20 | Toshiba Ceramics Co., Ltd. | Vertical boat and a method for making the same |
| JP3348936B2 (ja) * | 1993-10-21 | 2002-11-20 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| JP3125199B2 (ja) * | 1993-03-18 | 2001-01-15 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| DE69402918T2 (de) * | 1993-07-15 | 1997-08-14 | Applied Materials Inc | Substratfangvorrichtung und Keramikblatt für Halbleiterbearbeitungseinrichtung |
| US5556275A (en) * | 1993-09-30 | 1996-09-17 | Tokyo Electron Limited | Heat treatment apparatus |
| US5565034A (en) * | 1993-10-29 | 1996-10-15 | Tokyo Electron Limited | Apparatus for processing substrates having a film formed on a surface of the substrate |
| US5663558A (en) * | 1994-07-07 | 1997-09-02 | Brother Kogyo Kabushiki Kaisha | Optical beam scanning unit with slit for producing horizontal synchronizing signal |
| EP0871843B1 (en) * | 1994-10-17 | 2003-05-14 | Varian Semiconductor Equipment Associates Inc. | Mounting member and method for clamping a flat thin conductive workpiece |
| JPH10510680A (ja) * | 1995-05-05 | 1998-10-13 | サン−ゴバン インダストリアル セラミックス,インコーポレイティド | 滑りのない垂直架台構造 |
| JP3504784B2 (ja) * | 1995-09-07 | 2004-03-08 | 東京エレクトロン株式会社 | 熱処理方法 |
| JPH0992625A (ja) * | 1995-09-20 | 1997-04-04 | Tokyo Electron Ltd | 熱処理用ボ−ト |
| SE9503426D0 (sv) * | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A device for heat treatment of objects and a method for producing a susceptor |
| US5984607A (en) * | 1995-11-06 | 1999-11-16 | Tokyo Electron Limited | Transfer apparatus, transfer method, treatment apparatus and treatment method |
| WO1997031389A1 (en) * | 1996-02-23 | 1997-08-28 | Tokyo Electron Limited | Heat treatment device |
| SE9600705D0 (sv) * | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
| KR19990077350A (ko) * | 1996-02-29 | 1999-10-25 | 히가시 데쓰로 | 반도체웨이퍼의 열처리용 보트 |
| US5879311A (en) * | 1996-05-17 | 1999-03-09 | Mercury Diagnostics, Inc. | Body fluid sampling device and methods of use |
| JPH09306980A (ja) * | 1996-05-17 | 1997-11-28 | Asahi Glass Co Ltd | 縦型ウエハボート |
| US5800623A (en) * | 1996-07-18 | 1998-09-01 | Accord Seg, Inc. | Semiconductor wafer support platform |
| NL1005410C2 (nl) * | 1997-02-28 | 1998-08-31 | Advanced Semiconductor Mat | Stelsel voor het laden, behandelen en ontladen van op een drager aangebrachte substraten. |
| US6022587A (en) * | 1997-05-13 | 2000-02-08 | Applied Materials, Inc. | Method and apparatus for improving film deposition uniformity on a substrate |
| US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
| US6068441A (en) * | 1997-11-21 | 2000-05-30 | Asm America, Inc. | Substrate transfer system for semiconductor processing equipment |
| JPH11176822A (ja) * | 1997-12-05 | 1999-07-02 | Hitachi Ltd | 半導体処理装置 |
| US6204194B1 (en) * | 1998-01-16 | 2001-03-20 | F.T.L. Co., Ltd. | Method and apparatus for producing a semiconductor device |
| US5931666A (en) * | 1998-02-27 | 1999-08-03 | Saint-Gobain Industrial Ceramics, Inc. | Slip free vertical rack design having rounded horizontal arms |
| US6203617B1 (en) * | 1998-03-26 | 2001-03-20 | Tokyo Electron Limited | Conveying unit and substrate processing unit |
| KR20000002833A (ko) * | 1998-06-23 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 보트 |
| US6033952A (en) * | 1998-11-30 | 2000-03-07 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device |
| JP4255091B2 (ja) * | 1999-04-07 | 2009-04-15 | 株式会社日立国際電気 | 半導体製造方法 |
| US6099645A (en) * | 1999-07-09 | 2000-08-08 | Union Oil Company Of California | Vertical semiconductor wafer carrier with slats |
| TWI250604B (en) * | 1999-07-29 | 2006-03-01 | Ibm | Improved ladder boat for supporting wafers |
| JP2001118664A (ja) * | 1999-08-09 | 2001-04-27 | Ibiden Co Ltd | セラミックヒータ |
| US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| JP2001176808A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Ceramics Co Ltd | 気相薄膜成長装置におけるウエハ搬送方法およびそれに用いるウエハ支持部材 |
| US6939821B2 (en) * | 2000-02-24 | 2005-09-06 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
| US6341935B1 (en) * | 2000-06-14 | 2002-01-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer boat having improved wafer holding capability |
| US6878906B2 (en) * | 2000-08-30 | 2005-04-12 | Ibiden Co., Ltd. | Ceramic heater for semiconductor manufacturing and inspecting equipment |
| US6464445B2 (en) * | 2000-12-19 | 2002-10-15 | Infineon Technologies Richmond, Lp | System and method for improved throughput of semiconductor wafer processing |
| TWI272689B (en) * | 2001-02-16 | 2007-02-01 | Tokyo Electron Ltd | Method and apparatus for transferring heat from a substrate to a chuck |
| US6896968B2 (en) * | 2001-04-06 | 2005-05-24 | Honeywell International Inc. | Coatings and method for protecting carbon-containing components from oxidation |
| US6896738B2 (en) * | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
| US6835039B2 (en) * | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
| US6582221B1 (en) * | 2002-07-19 | 2003-06-24 | Asm International N.V. | Wafer boat and method for treatment of substrates |
| US7256375B2 (en) * | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
| JP4317871B2 (ja) * | 2004-04-21 | 2009-08-19 | 株式会社日立国際電気 | 熱処理装置 |
-
2005
- 2005-03-15 US US11/081,358 patent/US20060060145A1/en not_active Abandoned
- 2005-09-03 EP EP08009872A patent/EP1965412A1/en not_active Withdrawn
- 2005-09-03 EP EP05019177A patent/EP1638135A3/en not_active Withdrawn
- 2005-09-15 JP JP2005268362A patent/JP2006086534A/ja active Pending
-
2008
- 2008-01-17 US US12/016,028 patent/US20080124470A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745534A (ja) * | 1993-07-30 | 1995-02-14 | Sony Corp | 縦型cvd装置 |
| JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
| JPH10321543A (ja) * | 1997-05-20 | 1998-12-04 | Sumitomo Metal Ind Ltd | ウェハ支持体及び縦型ボート |
| JPH11176710A (ja) * | 1997-12-11 | 1999-07-02 | Asahi Glass Co Ltd | 半導体製造装置用部材 |
| JP2002503884A (ja) * | 1998-02-11 | 2002-02-05 | アプライド マテリアルズ インコーポレイテッド | 熱処理チャンバ用基板支持体 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277781A (ja) * | 2007-03-30 | 2008-11-13 | Covalent Materials Corp | 縦型ウエハボート |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1638135A3 (en) | 2008-03-19 |
| EP1638135A2 (en) | 2006-03-22 |
| EP1965412A1 (en) | 2008-09-03 |
| US20060060145A1 (en) | 2006-03-23 |
| US20080124470A1 (en) | 2008-05-29 |
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