JP2006080267A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2006080267A JP2006080267A JP2004262065A JP2004262065A JP2006080267A JP 2006080267 A JP2006080267 A JP 2006080267A JP 2004262065 A JP2004262065 A JP 2004262065A JP 2004262065 A JP2004262065 A JP 2004262065A JP 2006080267 A JP2006080267 A JP 2006080267A
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Abstract
【解決手段】 半導体チップと略同一の寸法に封止される半導体装置を製造する方法であって、主面に複数の電極パッドを有する半導体ウエハを準備するステップと、主面上に電極パッドと接続される導体ポストを形成するステップと、主面上を封止樹脂で覆うステップと、封止樹脂を研削して導体ポストの頂面を露出させるステップと、封止樹脂をブラスト加工により研磨して導体ポストの頂面近傍の側面を露出させるステップと、封止樹脂から露出した導体ポストに接続される外部電極を形成するステップと、を含むことを特徴とする半導体装置の製造方法。
【選択図】 図3
Description
チップサイズパッケージにおける接続信頼性の向上に関する発明が、例えば、特許文献1乃至7に記載されている。
特許文献1乃至3に記載の発明では、封止樹脂から突起電極の先端を露出させるためにレーザ、エッチング、機械研磨及びブラストなどで表面加工を行っている。しかしながら、封止樹脂に完全に覆われた状態からレーザ加工、エッチング加工及びブラスト加工を行う場合、その処理時間が長くなってしまう。また、機械研磨を行えば処理時間が短縮できるが、機械研磨のみで突起電極の先端を封止樹脂から精度よく露出させることは困難である。
図1は、本発明の第1実施形態に係る製造方法により製造された樹脂封止半導体装置100の一部の断面構造図である。
樹脂封止半導体装置100は、半導体チップ1と、保護膜2及び3と、電極パッド4と、再配線層5と、導体ポスト6と、球状電極7と、封止樹脂8とを備えている。
まず、図2(a)に示すように、ウエハ検査によって電気的特性が評価された半導体ウエハ1’を準備する。半導体ウエハ1’は、素子形成面1a側に保護膜2と電極パッド4とを備えている。素子形成面1aには、トランジスタなどの半導体素子によって電子回路(図示せず)が構成されており、電極パッド4はそれらの半導体素子と電気的に接続している。また、電極パッド4の上方を除いて保護膜2が形成されている。保護膜2は、一般的にはシリコン酸化膜(SiO2)であるが、シリコン窒化膜(Si3N4)であってもよい。
なお、本実施形態では、BGA(Ball Grid Array)タイプの樹脂封止半導体装置100について説明したが、一般に、半導体チップ上に封止樹脂に覆われた導体ポストを有し、さらに導体ポスト上に外部電極が形成される構造の半導体装置であれば本発明を適用することは可能である。
第1実施形態に係る半導体装置の製造方法によれば、頂面及び側面の一部が露出された導体ポスト6に対して球状電極7を形成する。これにより、球状電極7が導体ポスト6の頂面及び側面で支持されるようになり、球状電極7と導体ポスト6との接合力が増大して耐衝撃性が向上するため、樹脂封止半導体装置100と実装基板との接続信頼性が向上する。また、ブラスト法による導体ポスト6の側面の露出加工に先立ち、研削法(グラインド)による導体ポスト6の頂面の露出加工を行うことで、導体ポスト6及び封止樹脂8の表面が平坦化され導体ポスト6の高さが均一となる。これにより、導体ポスト6上に形成される球状電極7をも含めた最終的な高さが均一となるため、樹脂封止半導体装置100と実装基板との接合部位において局所的な応力集中が生じにくくなり、接続信頼性が向上する。また、導体ポスト6の側面の露出加工をブラスト法、例えば、液体ホーニング法で行うことにより、ウエハ一括の簡略的な処理が可能となるため、レーザ法などによる露出加工に比べて加工時間を短縮することができると共に、製造コストを低減することができる。さらに、導体ポスト6の露出加工を研削法(グラインド)とブラスト法の2段階で行うことにより、露出加工を全てブラスト法で行うよりも加工時間を短縮することができる。
図4は、本発明の第2実施形態に係る製造方法により製造された樹脂封止半導体装置101の一部の断面構造図である。
第2実施形態に係る樹脂封止半導体装置101は、第1実施形態に係る樹脂封止半導体装置100(図1)において、さらに、導電層9を導体ポスト6の頂面に備えている。導電層9は、例えば、ニッケルめっき膜であり、球状電極7の材料である半田の拡散防止を主目的としている。ニッケルめっき膜の膜厚は、例えば、3μmである。封止樹脂8は、導電層9の頂面と、導体ポスト6及び導電層9の側面の一部を露出するように導体ポスト6の高さよりも所定の厚さd’、例えば、10〜13μm程度薄く形成されている。その他の構造は樹脂封止半導体装置100と同一であるため、図4では、樹脂封止半導体装置100と同一の構造については図1と同一符号を付してその説明を省略する。
〔作用効果〕
第2実施形態に係る半導体装置の製造方法によれば、導体ポスト6の頂面に導電層9、例えば、ニッケルめっき膜を形成することで、半田の拡散を抑制してCuと半田の金属間化合物が形成されることを抑制すると共に、導体ポスト6の頂面周辺部が過剰に研磨されること抑制する。この2つの効果により、第1実施形態における作用効果に加え、さらに樹脂封止半導体装置101と実装基板との接合部位の接続信頼性を向上させることができる。
1’・・・半導体ウエハ
2、3・・・保護膜
4・・・電極パッド
5・・・再配線層
6・・・導体ポスト
7・・・球状電極
8・・・封止樹脂
9・・・導電層
100、101・・・樹脂封止半導体装置
Claims (9)
- 半導体チップと略同一の寸法に封止される半導体装置を製造する方法であって、
主面に複数の電極パッドを有する半導体ウエハを準備するステップと、
前記主面上に前記電極パッドと接続される導体ポストを形成するステップと、
前記主面上を封止樹脂で覆うステップと、
前記封止樹脂を研削して前記導体ポストの頂面を露出させるステップと、
前記封止樹脂をブラスト加工により研磨して前記導体ポストの頂面近傍の側面を露出させるステップと、
前記封止樹脂から露出した前記導体ポストに接続される外部電極を形成するステップと、
を含むことを特徴とする半導体装置の製造方法。 - 前記ブラスト加工は、液体ホーニング法により行われることを特徴とする、請求項1に記載の半導体装置の製造方法。
- 前記ブラスト加工に使用する砥粒は、アルミナ(Al2O3)の多角形粒子であることを特徴とする、請求項2に記載の半導体装置の製造方法。
- 前記外部電極は、半田の球状電極であることを特徴とする、請求項1に記載の半導体装置の製造方法。
- 前記導体ポストの頂面を露出させるステップの後において、前記導体ポストの頂面に導電層を形成するステップをさらに含むことを特徴とする、請求項1に記載の半導体装置の製造方法。
- 前記ブラスト加工は、液体ホーニング法により行われることを特徴とする、請求項5に記載の半導体装置の製造方法。
- 前記ブラスト加工に使用する砥粒は、アルミナ(Al2O3)の多角形粒子であることを特徴とする、請求項6に記載の半導体装置の製造方法。
- 前記導電層は、ニッケルめっき膜であることを特徴とする、請求項5に記載の半導体装置の製造方法。
- 前記外部電極は、半田の球状電極であることを特徴とする、請求項8に記載の半導体装置の製造方法。
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JP2010129996A (ja) * | 2008-11-28 | 2010-06-10 | Samsung Electro-Mechanics Co Ltd | メタルポストを備えた基板及びその製造方法 |
WO2011155638A1 (en) * | 2010-06-11 | 2011-12-15 | Nec Corporation | Method of redistributing functional element |
JP2016018806A (ja) * | 2014-07-04 | 2016-02-01 | 新光電気工業株式会社 | 配線基板、配線基板の製造方法 |
TWI680701B (zh) * | 2014-07-04 | 2019-12-21 | 日商新光電氣工業股份有限公司 | 配線基板及其製造方法 |
JP2020067421A (ja) * | 2018-10-26 | 2020-04-30 | 株式会社神戸製鋼所 | 材料密着度評価方法 |
JP7084579B2 (ja) | 2018-10-26 | 2022-06-15 | 株式会社神戸製鋼所 | 材料密着度評価方法 |
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Publication number | Publication date |
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US7329598B2 (en) | 2008-02-12 |
US20060051900A1 (en) | 2006-03-09 |
JP4653447B2 (ja) | 2011-03-16 |
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