JP2006066922A - トレンチベースのソースおよびゲート電極を有するパワーデバイス - Google Patents

トレンチベースのソースおよびゲート電極を有するパワーデバイス Download PDF

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Publication number
JP2006066922A
JP2006066922A JP2005248465A JP2005248465A JP2006066922A JP 2006066922 A JP2006066922 A JP 2006066922A JP 2005248465 A JP2005248465 A JP 2005248465A JP 2005248465 A JP2005248465 A JP 2005248465A JP 2006066922 A JP2006066922 A JP 2006066922A
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Japan
Prior art keywords
source
gate
trench
trenches
region
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Pending
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JP2005248465A
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English (en)
Japanese (ja)
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JP2006066922A5 (enExample
Inventor
Dev Alok Girdhar
デヴ・アロク・ガーダー
Ma Ling
リン・マ
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Infineon Technologies Americas Corp
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International Rectifier Corp USA
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Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of JP2006066922A publication Critical patent/JP2006066922A/ja
Publication of JP2006066922A5 publication Critical patent/JP2006066922A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2005248465A 2004-08-27 2005-08-29 トレンチベースのソースおよびゲート電極を有するパワーデバイス Pending JP2006066922A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60534004P 2004-08-27 2004-08-27
US11/211,268 US7465986B2 (en) 2004-08-27 2005-08-25 Power semiconductor device including insulated source electrodes inside trenches

Publications (2)

Publication Number Publication Date
JP2006066922A true JP2006066922A (ja) 2006-03-09
JP2006066922A5 JP2006066922A5 (enExample) 2006-04-20

Family

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Family Applications (1)

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JP2005248465A Pending JP2006066922A (ja) 2004-08-27 2005-08-29 トレンチベースのソースおよびゲート電極を有するパワーデバイス

Country Status (4)

Country Link
US (1) US7465986B2 (enExample)
JP (1) JP2006066922A (enExample)
DE (1) DE102005040512B4 (enExample)
TW (1) TWI299568B (enExample)

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JP2009135360A (ja) * 2007-12-03 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
JP2010505270A (ja) * 2006-09-27 2010-02-18 マックスパワー・セミコンダクター・インコーポレイテッド 窪んだフィールドプレートを備えたパワーｍｏｓｆｅｔ
JP2014067753A (ja) * 2012-09-24 2014-04-17 Toshiba Corp 電力用半導体素子
JP2015177112A (ja) * 2014-03-17 2015-10-05 株式会社東芝 半導体装置
JP2017147393A (ja) * 2016-02-19 2017-08-24 富士電機株式会社 Ｒｂ‐ｉｇｂｔ

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US7579650B2 (en) * 2006-08-09 2009-08-25 International Rectifier Corporation Termination design for deep source electrode MOSFET
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