JP2006059481A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP2006059481A
JP2006059481A JP2004241991A JP2004241991A JP2006059481A JP 2006059481 A JP2006059481 A JP 2006059481A JP 2004241991 A JP2004241991 A JP 2004241991A JP 2004241991 A JP2004241991 A JP 2004241991A JP 2006059481 A JP2006059481 A JP 2006059481A
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Japan
Prior art keywords
word line
dummy
memory cell
dummy word
memory device
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Pending
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JP2004241991A
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English (en)
Japanese (ja)
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JP2006059481A5 (enExample
Inventor
Hideaki Kurata
英明 倉田
Yoshihiro Ikeda
良広 池田
Masahiro Shimizu
雅裕 清水
Kenji Kosakai
健司 小堺
Toshifumi Noda
敏史 野田
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004241991A priority Critical patent/JP2006059481A/ja
Priority to US11/180,659 priority patent/US7301815B2/en
Publication of JP2006059481A publication Critical patent/JP2006059481A/ja
Publication of JP2006059481A5 publication Critical patent/JP2006059481A5/ja
Priority to US11/976,299 priority patent/US20080055983A1/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2004241991A 2004-08-23 2004-08-23 半導体記憶装置 Pending JP2006059481A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004241991A JP2006059481A (ja) 2004-08-23 2004-08-23 半導体記憶装置
US11/180,659 US7301815B2 (en) 2004-08-23 2005-07-14 Semiconductor memory device comprising controllable threshould voltage dummy memory cells
US11/976,299 US20080055983A1 (en) 2004-08-23 2007-10-23 Semiconductor memory device comprising controllable threshold voltage dummy memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004241991A JP2006059481A (ja) 2004-08-23 2004-08-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2006059481A true JP2006059481A (ja) 2006-03-02
JP2006059481A5 JP2006059481A5 (enExample) 2007-04-12

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JP2004241991A Pending JP2006059481A (ja) 2004-08-23 2004-08-23 半導体記憶装置

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US (2) US7301815B2 (enExample)
JP (1) JP2006059481A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009026369A (ja) * 2007-07-18 2009-02-05 Toshiba Corp 半導体記憶装置
KR100900851B1 (ko) 2006-05-31 2009-06-04 가부시끼가이샤 도시바 비휘발성 반도체 메모리
JP2009193631A (ja) * 2008-02-14 2009-08-27 Toshiba Corp 不揮発性半導体記憶装置
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
US7697355B2 (en) 2006-08-17 2010-04-13 Fujitsu Microelectronics Limited Semiconductor memory and system with matching characteristics of signal supplied to a dummy signal line and a real signal line
JP2010250891A (ja) * 2009-04-14 2010-11-04 Toshiba Corp 不揮発性半導体記憶装置
JP2011524063A (ja) * 2008-06-12 2011-08-25 マイクロン テクノロジー， インク． フラッシュメモリデバイスにデータを格納する方法
JP2012195051A (ja) * 2007-12-13 2012-10-11 Toshiba Corp 半導体記憶装置
US8289774B2 (en) 2008-04-18 2012-10-16 Samsung Electronics Co., Ltd. Flash memory device and operating method of flash memory device
US8885411B2 (en) 2013-03-15 2014-11-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR101927667B1 (ko) 2018-03-15 2018-12-10 한국과학기술원 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 단위 모스펫
US10163513B2 (en) 2016-02-26 2018-12-25 Samsung Electronics Co., Ltd. Program method of memory device and memory system using the same
US10409499B2 (en) 2017-03-16 2019-09-10 Toshiba Memory Corporation NAND flash memory device and system including SLC and MLC write modes
JP2019161009A (ja) * 2018-03-13 2019-09-19 東芝メモリ株式会社 記憶装置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100697285B1 (ko) * 2005-05-11 2007-03-20 삼성전자주식회사 워드라인과 선택라인 사이에 보호라인을 가지는 낸드플래시 메모리 장치
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US7691710B2 (en) * 2006-10-17 2010-04-06 Sandisk Corporation Fabricating non-volatile memory with dual voltage select gate structure
US7586157B2 (en) * 2006-10-17 2009-09-08 Sandisk Corporation Non-volatile memory with dual voltage select gate structure
US7508703B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Non-volatile memory with boost structures
US7696035B2 (en) * 2006-11-13 2010-04-13 Sandisk Corporation Method for fabricating non-volatile memory with boost structures
US7508710B2 (en) * 2006-11-13 2009-03-24 Sandisk Corporation Operating non-volatile memory with boost structures
JP2008146771A (ja) * 2006-12-12 2008-06-26 Toshiba Corp 半導体記憶装置
US20080232169A1 (en) * 2007-03-20 2008-09-25 Atmel Corporation Nand-like memory array employing high-density nor-like memory devices
KR100854914B1 (ko) 2007-04-06 2008-08-27 주식회사 하이닉스반도체 플래시 메모리 장치 및 이의 동작 방법
KR100897603B1 (ko) * 2007-06-20 2009-05-14 삼성전자주식회사 반도체 메모리 장치
US7808826B2 (en) * 2007-06-25 2010-10-05 Sandisk Corporation Non-volatile storage with individually controllable shield plates between storage elements
US7636260B2 (en) * 2007-06-25 2009-12-22 Sandisk Corporation Method for operating non-volatile storage with individually controllable shield plates between storage elements
US7781286B2 (en) * 2007-06-25 2010-08-24 Sandisk Corporation Method for fabricating non-volatile storage with individually controllable shield plates between storage elements
KR101291667B1 (ko) * 2007-08-20 2013-08-01 삼성전자주식회사 불휘발성 메모리 장치 및 그 독출 방법
US7872917B2 (en) * 2007-12-25 2011-01-18 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory device and memory system including the same
KR101478149B1 (ko) 2008-10-20 2015-01-05 삼성전자주식회사 더미 트랜지스터를 갖는 플래시 메모리 장치
JP4987927B2 (ja) * 2009-09-24 2012-08-01 株式会社東芝 半導体記憶装置
US20140192598A1 (en) * 2012-06-04 2014-07-10 Kabushiki Kaisha Toshiba Semiconductor memory device
KR102000634B1 (ko) 2012-06-07 2019-07-16 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 소거 방법
KR20150004215A (ko) * 2013-07-02 2015-01-12 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
JP2015097245A (ja) * 2013-11-15 2015-05-21 株式会社東芝 不揮発性半導体記憶装置、及びメモリシステム
KR102345597B1 (ko) * 2015-06-30 2022-01-03 삼성전자주식회사 더미 워드 라인을 갖는 3차원 플래시 메모리 장치
KR102673490B1 (ko) 2016-11-28 2024-06-11 삼성전자주식회사 부분 읽기 동작을 수행하는 불휘발성 메모리 장치 및 그것의 읽기 방법
CN113409858B (zh) * 2019-03-26 2022-07-05 长江存储科技有限责任公司 3d nand存储器及其抑制顶层存储层编程串扰的方法
US12133389B2 (en) * 2020-04-20 2024-10-29 SK Hynix Inc. Semiconductor memory device including pass transistors with variable sizes

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086662A (en) * 1975-11-07 1978-04-25 Hitachi, Ltd. Memory system with read/write control lines
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
JPS6390096A (ja) * 1986-10-01 1988-04-20 Nec Corp 半導体記憶装置
US5406516A (en) * 1992-01-17 1995-04-11 Sharp Kabushiki Kaisha Semiconductor memory device
US6188608B1 (en) * 1999-04-23 2001-02-13 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
JP4058219B2 (ja) 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
JP4005895B2 (ja) * 2002-09-30 2007-11-14 株式会社東芝 不揮発性半導体メモリ装置
JP4398195B2 (ja) * 2003-08-08 2010-01-13 パナソニック株式会社 半導体記憶装置
KR100506941B1 (ko) * 2003-08-19 2005-08-05 삼성전자주식회사 더미 셀들을 갖는 플래쉬 메모리소자 및 그것의 소거방법들
JP2005085903A (ja) * 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP4398750B2 (ja) * 2004-02-17 2010-01-13 株式会社東芝 Ｎａｎｄ型フラッシュメモリ

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100900851B1 (ko) 2006-05-31 2009-06-04 가부시끼가이샤 도시바 비휘발성 반도체 메모리
US7697355B2 (en) 2006-08-17 2010-04-13 Fujitsu Microelectronics Limited Semiconductor memory and system with matching characteristics of signal supplied to a dummy signal line and a real signal line
JP2009026369A (ja) * 2007-07-18 2009-02-05 Toshiba Corp 半導体記憶装置
JP2012195051A (ja) * 2007-12-13 2012-10-11 Toshiba Corp 半導体記憶装置
JP2009193631A (ja) * 2008-02-14 2009-08-27 Toshiba Corp 不揮発性半導体記憶装置
US8289774B2 (en) 2008-04-18 2012-10-16 Samsung Electronics Co., Ltd. Flash memory device and operating method of flash memory device
JP2011524063A (ja) * 2008-06-12 2011-08-25 マイクロン テクノロジー， インク． フラッシュメモリデバイスにデータを格納する方法
US8595423B2 (en) 2008-06-12 2013-11-26 Micron Technology, Inc. Method of storing data on a flash memory device
US9230658B2 (en) 2008-06-12 2016-01-05 Micron Technology, Inc. Method of storing data on a flash memory device
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
JP2010250891A (ja) * 2009-04-14 2010-11-04 Toshiba Corp 不揮発性半導体記憶装置
US8885411B2 (en) 2013-03-15 2014-11-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US10163513B2 (en) 2016-02-26 2018-12-25 Samsung Electronics Co., Ltd. Program method of memory device and memory system using the same
US10409499B2 (en) 2017-03-16 2019-09-10 Toshiba Memory Corporation NAND flash memory device and system including SLC and MLC write modes
JP2019161009A (ja) * 2018-03-13 2019-09-19 東芝メモリ株式会社 記憶装置
KR101927667B1 (ko) 2018-03-15 2018-12-10 한국과학기술원 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 단위 모스펫

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Publication number Publication date
US7301815B2 (en) 2007-11-27
US20060039230A1 (en) 2006-02-23
US20080055983A1 (en) 2008-03-06

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